CN107546319A - A kind of pyroelectric infrared detector and preparation method thereof - Google Patents
A kind of pyroelectric infrared detector and preparation method thereof Download PDFInfo
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- CN107546319A CN107546319A CN201710747273.6A CN201710747273A CN107546319A CN 107546319 A CN107546319 A CN 107546319A CN 201710747273 A CN201710747273 A CN 201710747273A CN 107546319 A CN107546319 A CN 107546319A
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- pyroelectricity
- groove
- infrared detector
- transmissive substrates
- pyroelectric infrared
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Abstract
The invention belongs to electronically materials and component technical field, specially a kind of pyroelectric infrared detector and preparation method thereof.Including groove light-transmissive substrates, pyroelectricity layer and bonded layer.The present invention replaces silicon substrate using the reeded light-transmissive substrates of surface band, condition is provided by substrate and monocrystalline or ceramic pyroelectricity sensitivity member integrate using normal temperature, normal pressure bonding, the hanging heat insulating construction of air-gap is realized and monocrystalline or the sensitive member of ceramic pyroelectricity is integrated；And it is internally formed a heat insulating construction in the sensitive member making groove of pyroelectricity, in sensitive member.Pyroelectric infrared detector provided by the invention, good in thermal property, reliability are high, technique is simple, cost is low, and are easily integrated, and detection performance is good.
Description
Technical field
The invention belongs to electronically materials and component technical field, it is related to pyroelectric infrared detector, is specially a kind of heat
Release electric infrared detector and preparation method thereof.
Background technology
Pyroelectric detector is a kind of important infrared detector, the thermal detector type belonged in infrared detector.Together
Other thermal detectors are compared, pyroelectric detector have without refrigeration, the response time is short, detectivity is high, noise and small power consumption,
Manufacture craft is simple, cost of manufacture is relatively low etc., therefore pyroelectric detector is in national defence, security protection control, automation, smart home
All it is widely used Deng field.
The heat insulating construction and pyroelectricity material performance that the performance of pyroelectric detector uses with device are closely related.Pyroelectricity
Ceramics and monocrystal material have excellent pyroelectric property, are the main materials of current commercial pyroelectric infrared detector.It is adiabatic
Structure can improve the thermal insulation properties of detector, reduce heat and be lost in surrounding media, pyroelectricity material is obtained as far as possible
Big temperature rise rate, therefore heat insulating construction has highly important influence to the performance of non-refrigerated infrared detector, its design and
Prepare and obtain the key of high-performance non-refrigerated infrared detector.
At present, pyroelectric detector heat insulating construction mainly has the Si base air-gaps obtained using silicon (Si) base micro-processing technology
Structure and the insulating structure using lower thermal conductivity film preparation.With the insulating structure phase using lower thermal conductivity film preparation
Than Si base air-gap structures possess more preferable insulation effect, but its preparation technology is complicated, and cost is high.At present, mainly using film
Technique realizes the integrated of pyroelectricity material and Si base air-gap heat insulating constructions.And the heat prepared on Si base air-gap heat insulating constructions
Release conductive film material property and be not so good as corresponding pyroelectric ceramics or monocrystal material, while Si base air-gap heat insulating constructions need to protect
Staying certain thickness Si, to support the pyroelectricity material for the side of being deposited thereon, this is reduced to a certain extent as supporting layer
The insulation effect of air-gap causes the performance based on air-gap heat insulating construction detector to be restricted.And monocrystalline or ceramic material
Can not with Si bases air-gap structure directly carries out normal temperature, normal pressure integrates, can only high temperature integrate；But high temperature is integrated for pyroelectricity
The performance of detector can produce great harmful effect, and such as carrying out bonding using Au-Sn alloy bondings technique integrates, then is bonded
The temperature and pressure applied in journey may result in pyroelectricity material depolarization, produce the problems such as residual stress, and then cause heat
Release the penalty of electric explorer.
In order to eliminate the interference that the extraneous factors such as variation of ambient temperature, vibration export to device, pyroelectric detector is universal
Using opposite polarity two pixels double capacitance structures in series, two pixel detecting signal differences export for device.In reality
In the application of border, although one of pixel can only be irradiated by optical system infra-red radiation, but between two pixels
Still temperature can be produced by thermal conduction mechanism by the electrode and sensitive material for forming pixel to spread, causes the detection of sensitive member
Hydraulic performance decline.
Therefore, design the heat insulating construction that can improve the sensitive first hot property of pyroelectricity and realize pyroelectric single crystal or pottery
The novel pyroelectric infrared detector that ceramic material integrates with air-gap heat insulating construction, has great meaning.
The content of the invention
Problem or deficiency be present for above-mentioned, the invention provides a kind of pyroelectric infrared detector, to realize pyroelectricity
The novel pyroelectric infrared detector that monocrystalline or ceramic material integrate with air-gap heat insulating construction.
The pyroelectric infrared detector, including band groove light-transmissive substrates, pyroelectricity layer and photosensitive bonded layer.
Pyroelectricity layer is monocrystalline or the sensitive member of ceramic pyroelectricity, and with Top electrode and bottom electrode, Top electrode uses double electric capacity
Structure, bottom electrode are arranged above groove with groove light-transmissive substrates, and under being adapted with the groove with groove light-transmissive substrates and making
Electrode is completely hanging, forms a self supporting structure with air-gap.Photosensitive bonded layer is in pyroelectricity layer with being served as a contrast with groove printing opacity
The centre at bottom, the sensitive member of pyroelectricity are integrated with the mode being bonded with groove light-transmissive substrates using normal temperature, normal pressure.
Further, the monocrystalline or double capacitance structures that the electrode of the sensitive member of ceramic pyroelectricity is array.
Further, the groove with a bar shaped between the pixel that the Top electrode of double capacitance structures is formed, as
Heat insulating construction between sensitive first two pixels of pyroelectricity.
Top electrode selects array structure, and its pixel is using double capacitance structures, and now the sensitive member of pyroelectricity, increases in detection area
While big, the double base of double base pixel structure can regard the opposite polarity electric capacity of two series connection as, by from the external world
In the case that temperature, pressure, vibration etc. are disturbed, caused by the pixel of double base structure electric signal can cancel out each other, and be disappeared with this
Except the interference that extraneous factor exports to device, the reliability of sensitive first performance ensure that.
The preparation method of above-mentioned pyroelectric infrared detector, comprises the following steps：
Step 1, in the one side of light-transmissive substrates chip produce groove, form band groove light-transmissive substrates chip.
Step 2, generate photosensitive bonded layer on band groove light-transmissive substrates chip.
Step 3, Top electrode and bottom electrode in the sensitive first double capacitance structures of chip upper and lower surface making of pyroelectricity.
Step 4, pyroelectricity layer carried out by normal temperature with groove light-transmissive substrates by bonded layer, normal pressure is bonded, bottom electrode
After bonding directly over the groove with groove light-transmissive substrates, it is set vacantly to form the self supporting structure with air-gap.
Step 5, step 4 is bonded after wafer fabrication into needs pyroelectric detector.
Also include a step between the step 3 and 4：In the picture that double capacitance structure Top electrodes of pyroelectricity material chip are formed
Groove is produced between member.
Use of the invention replaces silicon substrate with reeded light-transmissive substrates, to be bonded using normal temperature, normal pressure by substrate and list
Brilliant or ceramic pyroelectricity sensitivity member, which integrate, provides condition, realizes the hanging heat insulating construction of air-gap and monocrystalline or ceramics heat
It is integrated to release electrically susceptible sense member.Normal temperature, the mode of normal pressure bonding will not bring thermal stress to pyroelectricity sensitivity member, and there will not be pressure makes
The sensitive member of pyroelectricity produces deformation, eliminates influence of the technique to sensitive first performance, at the same also reduce process complexity and into
This.And groove is made between the pixel of double capacitance structure Top electrodes composition in the sensitive member of pyroelectricity as exhausted inside sensitive member
Heat structure, reduce the temperature diffusion between two pixels, reached with this and reduce heat losses, make the more preferable mesh of detection performance
's.
In summary, pyroelectric infrared detector provided by the invention, good in thermal property, reliability are high, technique is simple, cost
It is low, and be easily integrated, detection performance is good.
Brief description of the drawings
Fig. 1 is the structural section schematic diagram of embodiment；
Fig. 2 is the assembling schematic diagram of embodiment；
Fig. 3 is the upper and lower surface schematic diagram of the sensitive member of embodiment pyroelectricity, and wherein left figure is Top electrode schematic diagram, and right figure is
Bottom electrode schematic diagram；
Fig. 4 is the preparation of the patterned lithium tantalate wafer of embodiment；
Fig. 5 is preparation of the embodiment with groove photosensitive glass chip；
Fig. 6 is the patterned lithium tantalate wafer of embodiment and the assembling with groove photosensitive glass chip；
Fig. 7 is the voltage peak-to-peak value figure that embodiment tests to obtain under 6.3Hz frequencies；
Fig. 8 is the Voltage Peak peak curve that embodiment tests to obtain at different frequencies；
Fig. 9 is to be tested before embodiment makes groove between two pixels of the sensitive member of pyroelectricity under 5.4Hz frequencies
The voltage peak-to-peak value figure arrived；
Figure 10 is to be tested after embodiment makes groove between two pixels of the sensitive member of pyroelectricity under 5.4Hz frequencies
The voltage peak-to-peak value figure arrived；
Reference：1- photosensitive glass substrates with groove, the sensitive member of 2- monocrystalline lithium tantalates pyroelectricity, 3- pyroelectricities are sensitive
First Top electrode, the sensitive first bottom electrode of 4- pyroelectricities, 5-UV glue bonded layers, 6-3 cuns of lithium tantalate wafers, 7-3 cuns of patterned tantalic acids
Lithium chip, 8-3 cuns of photosensitive glass chips, 9-3 cuns of band groove photosensitive glass chips.
Embodiment
Below by embodiment combination accompanying drawing, the present invention is described in further detail.
The present embodiment structure as shown in figure 1, including：Photosensitive glass substrate 1 with groove, lithium tantalate (LiTaO3) monocrystalline heat
Release electrically susceptible sense member 2, UV glue bonded layer 5.
The upper and lower surface structures of the sensitive member 2 of monocrystalline lithium tantalate pyroelectricity are as shown in figure 3, its upper surface includes Top electrode 3；Under
Surface includes bottom electrode 4, and electrode material Au, wherein Top electrode 3 are double capacitance structures.UV glue-lines 5 are clipped in the band photosensitive glass of groove
Glass substrate 1 and lithium tantalate (LiTaO3) among the sensitive member 2 of monocrystal pyroelectric, make photosensitive glass substrate 1 and lithium tantalate with groove
(LiTaO3) the sensitive member 2 of monocrystal pyroelectric can be bonded.
Preparation method is as follows：
1. etched using the method for wet etching in the physical centre of 3 cun of one sides of photosensitive glass chip 8 of 500 μ m-thicks
The groove of 150 μm of depths forms band groove photosensitive glass chip 9；
2. getting rid of UV glue in the upper surface of band groove photosensitive glass chip 9 using photoresist spinner forms UV glue-lines, UV bondline thickness is
13μm；
3. the method etched with Ultra-Violet Laser is by the upper/lower electrode of 3 cun of lithium tantalate wafers 6 of 70 μ m-thicks according to detector
Size is patterned the Top electrode 3 and bottom electrode 4 to form double capacitance structures；The area of bottom electrode 4 is less than photosensitive glass substrate 1
Groove；
4. groove of the depth for 30 μm of bar shapeds is etched between the pixel that Top electrode 3 is formed with the method for laser cutting-up,
Obtain patterned lithium tantalate wafer 7；5. the lithium tantalate wafer 7 after will be graphical is positioned on UV glue-lines, the band photosensitive glass of groove
The groove of glass chip 9 is arranged at the lower section of bottom electrode 4, and being adapted with it makes bottom electrode 4 completely hanging, and UV glue-lines are exposed
Light makes UV adhesive curings, time for exposure 10s, lithium tantalate wafer 7 is integrated on band groove photosensitive glass chip 9；
6. being cut the chip after bonding according to the size of detector with slicer, required pyroelectric detector is obtained.
Normal temperature, normal pressure integration mode used in the present embodiment are the methods of UV glue bonding, and UV glue is a kind of by specific wavelength
After ultraviolet photoetching can solidify bonding agent, so carry out UV glue bondings two materials must at least one have preferably
Translucency, therefore the material of heat insulating construction uses the good photosensitive glass of translucency.
Fig. 4 is the voltage peak-to-peak value figure that the pyroelectric infrared detector of embodiment is tested to obtain under 6.3Hz radiation frequencies,
It is 1.393V by voltage peak-to-peak value after 1000 times of amplification is can be seen that in figure.
Fig. 5 is that the voltage peak-to-peak value that the pyroelectric infrared detector of embodiment is tested to obtain under different radiation frequencies is bent
Line, decayed by can be seen that peak-to-peak value to become big with radiation frequency in figure.
Fig. 6 is to be surveyed before the pyroelectric infrared detector of embodiment makes groove between two pixels under 5.4Hz frequencies
Obtained voltage peak-to-peak value figure is tried, is 632.7mV by voltage peak-to-peak value after 1000 times of amplification is can be seen that in figure.
Fig. 7 is to be surveyed after the pyroelectric infrared detector of embodiment makes groove between two pixels under 5.4Hz frequencies
Obtained voltage peak-to-peak value figure is tried, is 768mV by voltage peak-to-peak value after 1000 times of amplification is can be seen that in figure, it is seen that in two pixels
Between etched groove after, the pyroelectric property of sensitive member is improved, so as to improve the performance of detector.
In summary, it is seen that pyroelectric infrared detector reliability provided by the invention is high, technique is simple, cost is low, easily
In integrated, and then improve detection performance.
Claims (6)
1. a kind of pyroelectric infrared detector, including band groove light-transmissive substrates, pyroelectricity layer and photosensitive bonded layer, its feature exist
In：
Pyroelectricity layer is monocrystalline or the sensitive member of ceramic pyroelectricity, and with Top electrode and bottom electrode, Top electrode uses double capacitance structures,
Bottom electrode is arranged above the groove with groove light-transmissive substrates, and being adapted with it makes bottom electrode completely hanging, forms a band
The self supporting structure of air-gap；
Bonded layer in pyroelectricity layer and the centre with groove light-transmissive substrates, pyroelectricity layer with groove light-transmissive substrates using normal temperature,
The mode of normal pressure bonding integrates.
2. pyroelectric infrared detector as claimed in claim 1, it is characterised in that：The sensitive member of the monocrystalline or ceramic pyroelectricity
Electrode is double capacitance structures of array.
3. pyroelectric infrared detector as claimed in claim 1, it is characterised in that：Pyroelectricity among the Top electrode double base is quick
Sense member carries a groove, forms the heat insulating construction of an inside.
4. the preparation method of pyroelectric infrared detector as claimed in claim 1, comprises the following steps：
Step 1, in the one sides of light-transmissive substrates produce groove, form band groove light-transmissive substrates；
Step 2, generate bonded layer in band groove light-transmissive substrates；
Step 3, Top electrode and bottom electrode in the sensitive first double capacitance structures of upper and lower surface making of pyroelectricity；
Step 4, pyroelectricity layer carried out by normal temperature with groove light-transmissive substrates by bonded layer, normal pressure is bonded, bottom electrode bonding
Afterwards directly over the groove with groove light-transmissive substrates, it is set vacantly to form the self supporting structure with air-gap；
Step 5, step 4 is bonded after wafer fabrication into needs pyroelectric detector.
5. the preparation method of pyroelectric infrared detector as claimed in claim 4, it is characterised in that：
Also include a step between the step 3 and 4：Pyroelectricity material chip double capacitance structure Top electrodes form pixel it
Between produce groove.
6. the preparation method of pyroelectric infrared detector as claimed in claim 4, it is characterised in that：The normal temperature, normal pressure bonding
Mode be UV glue bonding.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108458785A (en) * | 2018-01-31 | 2018-08-28 | 云谷（固安）科技有限公司 | Spectral detection component and preparation method thereof, spectrometer |
| CN111864046A (en) * | 2020-06-29 | 2020-10-30 | 中国科学院上海微系统与信息技术研究所 | Preparation method of pyroelectric infrared detector and pyroelectric infrared detector |
| CN111883643A (en) * | 2020-07-23 | 2020-11-03 | 中国科学院上海微系统与信息技术研究所 | Integrated mid-infrared light detector and preparation method thereof |
| CN113503977A (en) * | 2021-07-26 | 2021-10-15 | 成都优蕊光电科技有限公司 | Line type pyroelectric infrared detector with thermal insulation structure |
| CN113551780A (en) * | 2021-09-18 | 2021-10-26 | 西安中科立德红外科技有限公司 | Infrared sensor chip based on semiconductor integrated circuit process and manufacturing method thereof |
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| CN102359821A (en) * | 2011-08-23 | 2012-02-22 | 郑州炜盛电子科技有限公司 | Pyroelectric infrared-sensitive element and pyroelectric infrared detector |
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| US5914488A (en) * | 1996-03-05 | 1999-06-22 | Mitsubishi Denki Kabushiki Kaisha | Infrared detector |
| CN101419092A (en) * | 2008-12-02 | 2009-04-29 | 中国电子科技集团公司第十三研究所 | Pyroelectric infrared detector for planarization thermal isolation structure and method for making same |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108458785A (en) * | 2018-01-31 | 2018-08-28 | 云谷（固安）科技有限公司 | Spectral detection component and preparation method thereof, spectrometer |
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| CN111864046B (en) * | 2020-06-29 | 2021-10-19 | 中国科学院上海微系统与信息技术研究所 | Preparation method of pyroelectric infrared detector and pyroelectric infrared detector |
| CN111883643A (en) * | 2020-07-23 | 2020-11-03 | 中国科学院上海微系统与信息技术研究所 | Integrated mid-infrared light detector and preparation method thereof |
| CN113503977A (en) * | 2021-07-26 | 2021-10-15 | 成都优蕊光电科技有限公司 | Line type pyroelectric infrared detector with thermal insulation structure |
| CN113551780A (en) * | 2021-09-18 | 2021-10-26 | 西安中科立德红外科技有限公司 | Infrared sensor chip based on semiconductor integrated circuit process and manufacturing method thereof |
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