CN107546283B - The GaN ultraviolet photoelectric detection sensor and its application circuit module of buried type electrode - Google Patents
The GaN ultraviolet photoelectric detection sensor and its application circuit module of buried type electrode Download PDFInfo
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- CN107546283B CN107546283B CN201710757483.3A CN201710757483A CN107546283B CN 107546283 B CN107546283 B CN 107546283B CN 201710757483 A CN201710757483 A CN 201710757483A CN 107546283 B CN107546283 B CN 107546283B
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Abstract
The present invention relates to a kind of GaN ultraviolet photoelectric detection sensor of buried type electrode and its application circuit modules, belong to field of photoelectric technology.The plane electrode of conventional metals-semiconductor-metal (MSM) structure GaN ultraviolet detector is carried out three-dimensional insertion design using vertical etch technique by the present invention, the GaN MSM structure of buried type electrode is formed, high speed, highly sensitive ultraviolet detector sensor are obtained；For the characteristic of the device, impedance matching current-voltage converter amplifier circuit is designed, promotes dynamic response characteristic, obtains microwatt, the volt grade of nanosecond incident uv detection voltage exports in real time.The present invention is able to achieve the standardization of the power supply power supply of ultraviolet detection, output signal, application cost is reduced, suitable for fields such as power equipment discharge, the start-stop of transport facility, military-civil fire defectors.
Description
Technical field
The invention belongs to field of photoelectric technology, be related to a kind of buried type electrode GaN ultraviolet photoelectric detection sensor and its
Application circuit module.
Background technique
Deep ultraviolet light near ultraviolet light especially 280nm wavelength has small, anti-interference ability of decaying in spatial
The advantages that strong, it is the ideal optical band of day blind communication, rocket or flame identification and high speed optical interconnection.The detection of ultraviolet light is
Realize one of the key core technologies of above-mentioned various ultra violet applications.
Within past 20 years, the ultraviolet light detector based on GaN semiconductor has obtained tremendous expansion, and the GaN of development is purple
The relatively traditional Si-based photodetectors of external detector have higher sensitivity, and have preferably suppression to visible light wave range
Ability processed；Meanwhile to meet dual-use different demands, improves the electro-optical characteristic of material using elements such as ginseng Fe, use
The Photoelectric Detection performance of metal-semiconductor-metal (Metal-Semiconductor-Metal, MSM) structure enhancing device；
The above various measures further improve the performance of GaN semiconductor ultraviolet detector.
But often power is weak for ultraviolet radiation in types of applications, the duration is short, and existing GaN ultraviolet light detector
It is not able to satisfy microwatt, the ultraviolet light detection demand of nanosecond.The key index for measuring ultraviolet light detector detection performance includes: inspection
Sensitivity, response speed and manufacturing cost are surveyed, this three elements is also the bottleneck that restricting current ultraviolet corona detector is promoted the use of.
Summary of the invention
In view of this, the purpose of the present invention is to provide a kind of GaN ultraviolet photoelectric detection sensor of buried type electrode and
Its application circuit module designs matched detection circuit, realizes high by optimizing the device architecture of GaN ultraviolet detection sensor
The optimization design of speed, highly sensitive UV detection module.
In order to achieve the above objectives, the invention provides the following technical scheme:
The GaN ultraviolet photoelectric detection sensor of buried type electrode, including substrate portions, GaN epitaxial layer, electrode I and electrode
II；The substrate portions are located at bottom, are connected with GaN epitaxial layer；The GaN epitaxial layer is with a thickness of hGaN；The electrode I and electricity
Pole II is not attached to, and the electrode I and electrode II submit distributed fault dentate, and side set width is λ, and side set spacing is λ, the electrode I and electricity
Pole II is buried in GaN epitaxial layer with depth d, hGaN> d.
Further, which is 0.5mm~5mm, and λ value range is 1 μm~6 μm, d value range
It is 0.2 μm~3 μm, hGaNValue range is 3 μm~10 μm.
Further, this method is specially epitaxial growth GaN layer, i.e. GaN epitaxial layer first on the substrate portions, then
Vertical etch is carried out to GaN epitaxial layer, forms the dentalation that interlocks, finally carries out the production that exposure mask vapor deposition completes electrode.
Further, the GaN ultraviolet photoelectric detection sensor including buried type electrode, matched current-voltage conversion
Amplifying circuit and high-pass filter；
The current-voltage converter amplifier circuit includes low-noise amplifier U1A, resistance R1, resistance R2, resistance R3, electricity
Hinder the impedance matching current-voltage converter amplifier circuit that R4, resistance R5, capacitor C1, capacitor C2 and capacitor C3 are constituted；
The high-pass filter includes low-noise amplifier U2A, resistance R6, resistance R7, resistance R8, resistance R9, resistance
R10, capacitor C4, capacitor C5 and capacitor C6；
The one end the resistance R1 is connected with the output end of the GaN ultraviolet photoelectric detection sensor of buried electrode, the other end with
One end series connection after capacitor C2, resistance R4 are in parallel, common point a are connected to the inverting input terminal pin of low-noise amplifier U1A
4；The other end after capacitor C2, resistance R4 are in parallel is connected to the output pin 1 of low-noise amplifier U1A；Capacitor C1 and resistance
R3 latter end ground connection in parallel, the other end are connected with resistance R2, and common point b and the non-inverting input terminal of low-noise amplifier U1A are drawn
Foot 3 connects, another termination power A of resistance R2；After resistance R5, capacitor C4 series connection, one end is connected to low-noise amplifier U1A's
Output pin 1, the non-inverting input terminal pin 3 of another termination low-noise amplifier U2A；Mono- termination power B of resistance R6, the other end
It is connected to the non-inverting input terminal pin 3 of amplifier U2A；Mono- end resistance R7 is connected to the non-inverting input terminal pin 3 of amplifier U2A, another
End ground connection；Capacitor C5 connect with resistance R9 after respectively with the inverting input terminal pin 4 of low-noise amplifier U2A and resistance R8 one
End is connected, and the resistance R8 other end is connected after being connected with the output pin 1 of low-noise amplifier U2A with capacitor C6, resistance R10；
The other end of resistance R10 is output end.Low-noise amplifier U1A and U2A are all made of single supply power supply, i.e., pin 5 connects positive supply
VIN+, pin 2 are grounded；
Low-noise amplifier U1A realizes current-voltage conversion amplification, and the GaN ultraviolet photoelectric detection of buried type electrode is passed
What sensor detected is reconverted into output voltage, and the GaN ultraviolet photoelectric detection with buried type electrode by the electric current of converting photons
Sensor carries out impedance matching；
Low-noise amplifier U2A realizes the high pass amplification of single supply power supply, and cutoff frequency and voltage amplification factor are by resistance
R8, resistance R9 and capacitor C5 are determined, promote the transient response of detection signal；
The current-voltage of the GaN ultraviolet photoelectric detection sensor of the buried type electrode is converted and amplifying circuit, amplification
Device gain is adjusted by resistance R4 and resistance R8, realizes nanosecond response and microampere order photoelectric current or the ultraviolet incident light of microwatt level
Volt step voltage convert output.
Further, power supply A and power supply B is 3.7V.
The beneficial effects of the present invention are:
(1) present invention is flat conventional metals-semiconductor-metal structure GaN ultraviolet detector using vertical etch technique
Face type electrode carries out three-dimensional insertion design, forms the GaN MSM structure of buried type electrode, obtains high speed, highly sensitive ultraviolet
Optical detection sensor；
(2) present invention is directed to the characteristic of the improved ultraviolet detector sensor, design impedance matching current-voltage conversion
Amplifying circuit promotes dynamic response characteristic, obtains to the real-time of the volt grade detection voltage of the incident uv of microwatt, nanosecond
Output, realizes the standardization of the power supply power supply, output signal of ultraviolet detection, reduces application cost, be suitable for power equipment discharge,
The fields such as the start-stop of transport facility, military-civil fire defector.
Detailed description of the invention
In order to keep the purpose of the present invention, technical scheme and beneficial effects clearer, the present invention provides following attached drawing and carries out
Illustrate:
Fig. 1 is the system structure diagram of the GaN ultraviolet photoelectric detection module of buried type electrode；
Fig. 2 is the GaN ultraviolet photoelectric detection sensor knot of conventional planar electrode structure and buried type electrode of the invention
Structure comparison diagram；
Fig. 3 is the staggeredly pole top view of the GaN ultraviolet photoelectric detection sensor of buried type electrode；
Fig. 4 is the GaN ultraviolet photoelectric detection sensor of buried type electrode of the present invention and the Photoelectric Experiments of conventional planar device
Comparison diagram；It (a) is current-voltage (I-V) characteristic when having a no light；(b) lower device is irradiated for periodic modulation ultraviolet signal
Dynamic time response characteristic.
Fig. 5 is the current-voltage converter amplifier circuit of the GaN ultraviolet photoelectric detection sensor of buried type electrode.
Specific embodiment
Below in conjunction with attached drawing, a preferred embodiment of the present invention will be described in detail.
As shown in Figure 1, Figure 2, Figure 3 shows, the present invention buries the conventional planar electrode of ultraviolet detector, i.e., first right
After epitaxial wafer vertical etch, then exposure mask vapor deposition is carried out, realizes the ultraviolet light detecting sensors of GaN of buried type electrode.Prong shape electricity
Pole width and electrode spacing λ are 3 μm, and device size size is 1mm, and burying depth d is 1 μm, GaN epitaxial layer thickness hGaNFor 8 μ
m。
The ultraviolet light detecting sensors photoelectric characteristic of the GaN of buried type electrode is as shown in figure 4, MSM with conventional planar electrode
GaN Ultraviolet sensor is compared, and the dark current of sensor of the present invention reduces 2 orders of magnitude, and illumination responds clever lightness and improves
More than 3 orders of magnitude, as shown in Fig. 4 (a)；In addition, the response rise time of sensor is effectively promoted, substantially without table
Reveal the gradual uphill process of traditional devices, analysis shows response speed reaches nanosecond, as shown in Fig. 4 (b).
The embedded photoelectricity testing part buried design and made GaN MSM PD is carried out to the electrode of traditional MSM PD,
Its electro-optical properties is characterized, discovery leakage current is 1 × 10-6A, ideal factor 3.7, barrier height 0.78eV, light
Spectrum response sensitivity at 280nm is reached for 0.8A/W, and the contrast sensitivity at 360nm and 500nm is greater than 3 × 106。
As shown in figure 5, the current-voltage conversion amplification electricity of the GaN ultraviolet light photo detection sensor using buried type electrode
Road, low-noise amplifier U1A constitute current-voltage conversion circuit, realize that electric current (converting photons electric current) is converted to voltage output,
The wherein output voltage size of current-voltage conversion circuit are as follows:
Vtest1=Vbat*R3/ (R2+R3)-R4*Id=3.7*2/5-1200*Id
Wherein, Vtest1 is output voltage, and Vbat is battery voltage, and Id is detection electric current.
Low-noise amplifier U2A constitutes the high pass amplifying circuit of single supply power supply, cutoff frequency and voltage amplification factor
It is determined by R8, R9, C5, promotes the dynamic characteristic of detection signal.The detection signal pre-processing circuit being made of the two amplifiers
It has the following characteristics that and is powered using single supply；There is buried type electrode GaN ultraviolet light photo device nanosecond to respond (200MHz band
It is wide), the amplifier that impedance variations and gain are 1200*100 times, amplifier gain can be adjusted by R4, R8, realization microampere order photoelectricity
The volt step voltage of stream or the ultraviolet incident light of microwatt level converts output.
Field application test is carried out to buried type electrode MSM GaN ultraviolet detection module, the experimental results showed that, the ultraviolet inspection
It surveys module and uses built-in 3.7V storage battery power supply, indoor common power switch discharge spark, 1 kilometer of outer motor vehicle brake are operated,
The coherent signal etc. of airborne aircraft operation can make highly sensitive, volt grade detection output；To indoor illuminating switch "Off"
Operation detect, the experimental results showed that, when oscillograph temporal resolution is 500ns/div, detection peak-to-peak value is 20mV.
Finally, it is stated that preferred embodiment above is only used to illustrate the technical scheme of the present invention and not to limit it, although logical
It crosses above preferred embodiment the present invention is described in detail, however, those skilled in the art should understand that, can be
Various changes are made to it in form and in details, without departing from claims of the present invention limited range.
Claims (4)
1. the GaN ultraviolet photoelectric detection sensor of buried type electrode, it is characterised in that: including substrate portions, GaN epitaxial layer, electricity
Pole I and electrode II；The substrate portions are located at bottom, are connected with GaN epitaxial layer；The GaN epitaxial layer is with a thickness of hGaN；It is described
Electrode I and electrode II are not attached to, and the electrode I and electrode II submit distributed fault dentate, and side set width is λ, and side set spacing is λ, described
Electrode I and electrode II are buried in GaN epitaxial layer with depth d, hGaN> d；
Current-voltage conversion and amplifying circuit using the GaN ultraviolet photoelectric detection sensor of the buried type electrode, including cover
The GaN ultraviolet photoelectric detection sensor of buried electrode, matched current-voltage converter amplifier circuit and high-pass filter；
The current-voltage converter amplifier circuit include low-noise amplifier U1A, resistance R1, resistance R2, resistance R3, resistance R4,
The impedance matching current-voltage converter amplifier circuit that resistance R5, capacitor C1, capacitor C2 and capacitor C3 are constituted；
The high-pass filter includes low-noise amplifier U2A, resistance R6, resistance R7, resistance R8, resistance R9, resistance R10, electricity
Hold C4, capacitor C5 and capacitor C6；
The one end the resistance R1 is connected with the output end of the GaN ultraviolet photoelectric detection sensor of buried electrode, the other end and capacitor
One end series connection after C2, resistance R4 are in parallel, common point a are connected to the inverting input terminal pin 4 of low-noise amplifier U1A；Electricity
The other end after holding C2, resistance R4 parallel connection is connected to the output pin 1 of low-noise amplifier U1A；Capacitor C1 and resistance R3 are simultaneously
Join latter end ground connection, the other end is connected with resistance R2, and the non-inverting input terminal pin 3 of common point b and low-noise amplifier U1A connect
It connects, another termination power A of resistance R2；After resistance R5, capacitor C4 series connection, one end is connected to the output of low-noise amplifier U1A
Hold pin 1, the non-inverting input terminal pin 3 of another termination low-noise amplifier U2A；Resistance R6 mono- termination power B, it is another to terminate to
The non-inverting input terminal pin 3 of amplifier U2A；Mono- end resistance R7 is connected to the non-inverting input terminal pin 3 of amplifier U2A, another termination
Ground；One end phase with the inverting input terminal pin 4 of low-noise amplifier U2A and resistance R8 respectively after capacitor C5 connects with resistance R9
Even, the resistance R8 other end is connected after being connected with the output pin 1 of low-noise amplifier U2A with capacitor C6, resistance R10；Resistance
The other end of R10 is output end；Low-noise amplifier U1A and U2A are all made of single supply power supply, i.e., pin 5 meets positive supply VIN+,
Pin 2 is grounded；
Low-noise amplifier U1A realizes current-voltage conversion amplification, the GaN ultraviolet photoelectric detection sensor of buried type electrode
What is detected is reconverted into output voltage by the electric current of converting photons, and senses with the GaN ultraviolet photoelectric detection of buried type electrode
Device carries out impedance matching；
Low-noise amplifier U2A realizes the high pass amplification of single supply power supply, and cutoff frequency and voltage amplification factor are by resistance R8, electricity
It hinders R9 and capacitor C5 to determine, promotes the transient response of detection signal；
The current-voltage of the GaN ultraviolet photoelectric detection sensor of the buried type electrode is converted and amplifying circuit, and amplifier increases
Benefit is adjusted by resistance R4 and resistance R8, realizes the volt of nanosecond response and microampere order photoelectric current or the ultraviolet incident light of microwatt level
Superfine voltage conversion output.
2. the GaN ultraviolet photoelectric detection sensor of buried type electrode as described in claim 1, it is characterised in that: the sensor
Length and width dimensions range is 0.5mm~5mm, and λ value range is 1 μm~6 μm, and d value range is 0.2 μm~3 μm, hGaNValue model
Enclose is 3 μm~10 μm.
3. the preparation method of the GaN ultraviolet photoelectric detection sensor of buried type electrode as described in claim 1, feature exist
In: this method is specially epitaxial growth GaN layer, i.e. GaN epitaxial layer first on the substrate portions, then to GaN epitaxial layer
Vertical etch is carried out, the dentalation that interlocks is formed, finally carries out the production that exposure mask vapor deposition completes electrode.
4. the current-voltage conversion and amplification of the GaN ultraviolet photoelectric detection sensor of buried type electrode as described in claim 1
Circuit, it is characterised in that: power supply A and power supply B is 3.7V.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US6239422B1 (en) * | 1999-03-10 | 2001-05-29 | Trw Inc. | Variable electrode traveling wave metal-semiconductor-metal waveguide photodetector |
| DE10333669A1 (en) * | 2003-07-24 | 2005-03-03 | Forschungszentrum Jülich GmbH | Photodetector and method for its production |
| CN102324445A (en) * | 2011-09-22 | 2012-01-18 | 中国科学院苏州纳米技术与纳米仿生研究所 | MSM (Metal-Semiconductor-Metal) photodetector with improved structure and preparation method thereof |
| CN102496648A (en) * | 2011-11-28 | 2012-06-13 | 南京大学 | Ultraviolet light single-photon detector with built-in negative feedback metal-semiconductor-metal structure |
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