CN107544103A - Double frequency-band Terahertz wave absorbing device based on graphene - Google Patents
Double frequency-band Terahertz wave absorbing device based on graphene Download PDFInfo
- Publication number
- CN107544103A CN107544103A CN201610480681.5A CN201610480681A CN107544103A CN 107544103 A CN107544103 A CN 107544103A CN 201610480681 A CN201610480681 A CN 201610480681A CN 107544103 A CN107544103 A CN 107544103A
- Authority
- CN
- China
- Prior art keywords
- graphene
- absorbing device
- wave absorbing
- layer
- band
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Aerials With Secondary Devices (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
Abstract
The invention discloses a kind of double frequency-band Terahertz wave absorbing device based on graphene, belong to the wave absorbing device part in Terahertz Technology field, make use of graphenic surface plasma characteristics.The wave absorbing device part is two-dimensional periodic structure, and its structure composition is：The metal band that gold is formed（1）, alundum (Al2O3) dielectric layer（2）, graphene absorbed layer（3）, polymethyl methacrylate（PMMA）Dielectric layer（4）, silicon dioxide liner bottom（5）, and the reflecting layer gold of bottom（6）.Absorption spectrum of the graphene to THz wave is mainly gone out by finite element method calculating simulation, wave absorbing device part structure is optimized, obtains preferable assimilation effect.The present invention is simple in construction, easy to process；And due to the special optical characteristics of graphene, absorption peak position can be adjusted by doping way.
Description
Technical field
The present invention relates to a kind of Terahertz wave absorbing device of the double frequency-band based on graphene, belong to grapheme material in terahertz wave band application field.
Background technology
THz wave refers to electromagnetic wave of the frequency between 0.1THz to 10THz, between millimeter wave and infrared ray, while has the part of properties of the two wave bands.With Terahertz Technology communication, imaging, sensing etc. application, cause very big concern of the people to Terahertz Technology.Few materials can apply to this wave band in nature at present, mainly it is the absence of effective THz source and detector, in recent years in order to improve the detection efficient of terahertz detection device and sensitivity, scientific research personnel starts the research of THz wave absorbing material being placed on vital position, the research of Terahertz absorbing material wherein based on Meta Materials is an important directions, by the size for changing construction unit, material effects can be made in Terahertz frequency range, so as to be used as a kind of Terahertz wave absorbing device part.
Absorbing material is a kind of a kind of material that the electromagnetic wave for inciding material surface can be converted to heat energy or other forms energy, the transmission and reflection of electromagnetic wave can be reduced, so as to realize the absorption to electromagnetic wave.Typical wave absorbing device part structure is sandwich type at present：Its top layer is periodicity Meta Materials pattern, and centre is one layer of nonmetal medium material, and bottom is opaque metal flat.The position of absworption peak and absorption efficiency are adjusted by the size of adjustment unit structure, so being difficult to realize adjustability once being fixed up in an experiment.Terahertz wave band due to the imaginary part of dielectric constant of the metal as conventional surface plasma material it is very big so as to can not direct support surface plasma, also limit application of the surface plasma in terms of Terahertz suction ripple.
Compared to traditional metal wave absorbing device, the Terahertz wave absorbing device proposed by the present invention based on graphene have it is simple in construction, it is easy to process, and the property of graphene can also be adjusted by applied voltage.Because the relative dielectric constant real part of graphene in terahertz wave band is negative, so showing the property of metal, support surface plasmon in terahertz wave band graphene.As the graphene of new material, in the characteristic that terahertz wave band is shown, the focus that absorbing material is studied is become.
The content of the invention
The present invention devises a kind of double frequency-band Terahertz wave absorbing device based on graphene, there is provided a kind of simple in construction, Terahertz wave absorbing device part that can easily be accommodated.
To achieve the above object, the technical solution used in the present invention is as follows：
Double frequency-band Terahertz wave absorbing device based on graphene, the device are two-dimensional and periodic six layer structure, are respectively from top to bottom：Layer of metal band, one layer of alundum (Al2O3) band, a layer graphene band, a strata methyl methacrylate, layer of silicon dioxide, and the metallic reflector of the bottom.
Double frequency-band Terahertz wave absorbing device part in the technical program can be made based on grapheme material by graphite oxide reducing process, and the processing of device also includes photoetching and lithographic technique.The present invention is absorbing medium using graphene band, and its chemical potential can be changed by way of doping.
Beneficial effect of the present invention is：
1st, can be achieved to the efficient absorption of THz wave, the absorption efficiency of single band is close to 100%.
2nd, by adjusting the chemical potential of graphene, double frequency-band assimilation effect is can obtain, and absorption efficiency is more than 90%.
3rd, the absorption peak position of the device not only can also pass through the method de-regulation of applied voltage by geometric parameter de-regulation.
4th, wave absorbing device part uses two-dimensional periodic structure, simple and compact for structure, is easy to large-scale integrated.
Brief description of the drawings
Fig. 1 is construction unit schematic diagram of the present invention.
Fig. 2 is w=7 μm, μ from 1.5eV to 1.8eV in the range of the suction ripple figure that changes
Fig. 3 is chemical potential μ=1.5eV, the suction ripple figure of structure when w is 7.2 μm
Contain in above picture：
1：Metal material gold；2：Alundum (Al2O3)；3 graphenes；4：Polymethyl methacrylate；
5：Silica；6：Metal material gold
m=t=0.5μm；b=210nm；g=1nm；h=85nm；d=3μm；s=10.75μm；
Embodiment
Fig. 1 is the double frequency-band Terahertz wave absorbing device based on graphene.It is that gold of the P thickness as t is used as reflective substrate that it, which was formed using the cycle, in the silica dioxide medium that golden laminated thereto a layer thickness is d, its dielectric constant is set to 4, face is superimposed the polymethyl methacrylate that a layer thickness is h on silica, its dielectric constant is set to 2.3, in the graphene band that the slice width degree of polymethyl methacrylate laminated thereto one is w as absorbed layer, its thickness is g, the alundum (Al2O3) band that a layer thickness is b is superimposed on graphene, its dielectric constant is 3.5, and top layer is the metal material gold that thickness is m.Here golden thickness is much larger than the golden skin depth in terahertz wave band, so golden material here can be considered PEC.
One of most important property of graphene is electric adjustability, therefore, we analyze under different chemical potentials graphene to the assimilation effect of THz wave, as seen from Figure 2 when chemical potential changes to 1.8eV from 1.5eV, there is double frequency-band absworption peak, and when chemical potential is that 1.5eV is that two absorption peaks are all higher than 90%；Simultaneously when keeping other specification constant, when chemical potential is 1.5eV, when the width of band is 7.2 μm, there is comparatively ideal double frequency-band absworption peak, absorption efficiency is more than 90%, as shown in Figure 3.
Claims (7)
1. the double frequency-band Terahertz wave absorbing device based on graphene, it is characterised in that：By gold bar belt of the one layer of gold as reflective substrate layer, layer of silicon dioxide substrate layer, a strata methyl methacrylate, a layer graphene band absorbed layer, one layer of alundum (Al2O3) band dielectric layer and top layer.
2. the double frequency-band Terahertz wave absorbing device according to claim 1 based on graphene, it is characterised in that：The metallic reflection basalis is golden material, and thickness is 0.5 μm.
3. the double frequency-band Terahertz wave absorbing device according to claim 1 based on graphene, it is characterised in that：The substrate layer is earth silicon material, and its thickness is 3 μm.
4. the double frequency-band Terahertz wave absorbing device according to claim 1 based on graphene, it is characterised in that：The polymethyl methacrylate layers, thickness 85nm.
5. the double frequency-band Terahertz wave absorbing device according to claim 1 based on graphene, it is characterised in that：The absorbing material is graphene, thickness 1nm.
6. the double frequency-band Terahertz wave absorbing device according to claim 1 based on graphene, the alundum (Al2O3) layer, thickness 210nm.
7. the double frequency-band Terahertz wave absorbing device according to claim 1 based on graphene, the top layer gold material, thickness are 0.5 μm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610480681.5A CN107544103B (en) | 2016-06-28 | 2016-06-28 | Dual-band terahertz wave absorber based on graphene |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610480681.5A CN107544103B (en) | 2016-06-28 | 2016-06-28 | Dual-band terahertz wave absorber based on graphene |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107544103A true CN107544103A (en) | 2018-01-05 |
| CN107544103B CN107544103B (en) | 2020-08-18 |
Family
ID=60962469
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610480681.5A Expired - Fee Related CN107544103B (en) | 2016-06-28 | 2016-06-28 | Dual-band terahertz wave absorber based on graphene |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107544103B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109411898A (en) * | 2018-10-22 | 2019-03-01 | 桂林电子科技大学 | A method of the adjustable wave absorbing device of Terahertz double frequency-band based on graphene |
| CN110707437A (en) * | 2019-10-25 | 2020-01-17 | 中国计量大学 | Terahertz dual-band absorber based on plastic cone frustum structure |
| CN111446551A (en) * | 2020-03-25 | 2020-07-24 | 桂林电子科技大学 | Multi-band adjustable terahertz wave absorber based on graphene super-surface |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040075923A1 (en) * | 2000-07-10 | 2004-04-22 | Pascal Knobloch | Optical component |
| CN103018926A (en) * | 2012-12-13 | 2013-04-03 | 大连理工大学 | Tunable microwave-absorbing artificial electromagnetic metamaterial based on topology/graphene |
| CN104111110A (en) * | 2014-07-24 | 2014-10-22 | 电子科技大学 | Top-end-extended cross terahertz absorption structure and application thereof |
| CN104536068A (en) * | 2014-12-25 | 2015-04-22 | 同济大学 | Near-infrared frequency adjustable absorber |
| CN104993056A (en) * | 2015-06-11 | 2015-10-21 | 上海电力学院 | Wide-spectrum flexible photoelectric detector and making method thereof |
| US20150362374A1 (en) * | 2014-06-16 | 2015-12-17 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy | Atomic Layer Deposition of Vanadium Oxide for Microbolometer and Imager |
| US20170110616A1 (en) * | 2014-03-21 | 2017-04-20 | Brookhaven Science Associates, Llc | HOLE BLOCKING, ELECTRON TRANSPORTING AND WINDOW LAYER FOR OPTIMIZED Culn (1-x)Ga(x)Se2 SOLAR CELLS |
-
2016
- 2016-06-28 CN CN201610480681.5A patent/CN107544103B/en not_active Expired - Fee Related
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040075923A1 (en) * | 2000-07-10 | 2004-04-22 | Pascal Knobloch | Optical component |
| CN103018926A (en) * | 2012-12-13 | 2013-04-03 | 大连理工大学 | Tunable microwave-absorbing artificial electromagnetic metamaterial based on topology/graphene |
| US20170110616A1 (en) * | 2014-03-21 | 2017-04-20 | Brookhaven Science Associates, Llc | HOLE BLOCKING, ELECTRON TRANSPORTING AND WINDOW LAYER FOR OPTIMIZED Culn (1-x)Ga(x)Se2 SOLAR CELLS |
| US20150362374A1 (en) * | 2014-06-16 | 2015-12-17 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy | Atomic Layer Deposition of Vanadium Oxide for Microbolometer and Imager |
| CN104111110A (en) * | 2014-07-24 | 2014-10-22 | 电子科技大学 | Top-end-extended cross terahertz absorption structure and application thereof |
| CN104536068A (en) * | 2014-12-25 | 2015-04-22 | 同济大学 | Near-infrared frequency adjustable absorber |
| CN104993056A (en) * | 2015-06-11 | 2015-10-21 | 上海电力学院 | Wide-spectrum flexible photoelectric detector and making method thereof |
Non-Patent Citations (1)
| Title |
|---|
| 肖丙刚: "基于石墨烯的隔离器理论设计与分析", 《浙江大学学报》 * |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109411898A (en) * | 2018-10-22 | 2019-03-01 | 桂林电子科技大学 | A method of the adjustable wave absorbing device of Terahertz double frequency-band based on graphene |
| CN109411898B (en) * | 2018-10-22 | 2021-04-23 | 桂林电子科技大学 | Terahertz dual-band adjustable wave absorber based on graphene |
| CN110707437A (en) * | 2019-10-25 | 2020-01-17 | 中国计量大学 | Terahertz dual-band absorber based on plastic cone frustum structure |
| CN111446551A (en) * | 2020-03-25 | 2020-07-24 | 桂林电子科技大学 | Multi-band adjustable terahertz wave absorber based on graphene super-surface |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107544103B (en) | 2020-08-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN206558698U (en) | Broadband Terahertz wave absorbing device based on graphenic surface plasma | |
| Cai et al. | Tunable enhanced optical absorption of graphene using plasmonic perfect absorbers | |
| CN208173803U (en) | Terahertz wave absorbing device that a kind of broadband based on graphene and Meta Materials is adjustable | |
| US9444002B2 (en) | Graphene transistor optical detector based on metamaterial structure and application thereof | |
| Xiong et al. | Strong anisotropic perfect absorption in monolayer black phosphorous and its application as tunable polarizer | |
| Zhu et al. | Graphene metamaterial for optical reflection modulation | |
| CN107978871B (en) | Polarization independent broadband terahertz wave absorber based on graphene multi-resonance structure | |
| CN108646325B (en) | A kind of adjustable graphene wide angle Terahertz wave absorbing device of frequency | |
| CN106019433A (en) | Graphene based terahertz broadband adjustable wave absorption device | |
| CN107546492A (en) | Broadband Terahertz wave absorbing device based on double trapezoid graphene | |
| Meng et al. | Tunable and multi-channel perfect absorber based on graphene at mid-infrared region | |
| CN107544103A (en) | Double frequency-band Terahertz wave absorbing device based on graphene | |
| CN107146955A (en) | A kind of efficient adjustable Terahertz wave absorbing device part based on grapheme material | |
| Takatsuka et al. | Gain enhancement in graphene terahertz amplifiers with resonant structures | |
| CN108183340A (en) | The adjustable wave absorbing device of broadband electricity based on the double annulus of graphene | |
| CN109037962A (en) | Double frequency graphene is adjustable Terahertz absorber | |
| Lin et al. | Plasmonic absorption enhancement in graphene circular and elliptical disk arrays | |
| TW200502630A (en) | Surface radiation conversion element, liquid crystal display device, and method of producing a surface radiation conversion element | |
| Ning et al. | Wideband absorption in fibonacci quasi-periodic graphene-based hyperbolic metamaterials | |
| Chen et al. | Absorption enhancement in double-layer cross-shaped graphene arrays | |
| Wang et al. | Spectrally selective solar absorber with sharp and temperature dependent cut-off based on semiconductor nanowire arrays | |
| Su et al. | A statistical exploration of multiple exciton generation in silicon quantum dots and optoelectronic application | |
| Ruan et al. | Ultrathin, broadband, omnidirectional, and polarization-independent infrared absorber using all-dielectric refractory materials | |
| CN207689699U (en) | A kind of double frequency-band Terahertz wave absorbing device based on band and continuous layer graphene | |
| Fu et al. | Low-intensity ultraviolet detection using a surface acoustic-wave sensor with a Ag-doped ZnO nanoparticle film |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20200818 Termination date: 20210628 |