CN107528001A - The preparation method and nanotube diode of a kind of nanotube diode - Google Patents
The preparation method and nanotube diode of a kind of nanotube diode Download PDFInfo
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- CN107528001A CN107528001A CN201710773067.2A CN201710773067A CN107528001A CN 107528001 A CN107528001 A CN 107528001A CN 201710773067 A CN201710773067 A CN 201710773067A CN 107528001 A CN107528001 A CN 107528001A
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Abstract
The invention provides a kind of preparation method of nanotube diode and nanotube diode, wherein, the preparation method of nanotube diode includes：CNT is prepared, deposits at least one semiconductor crystal on the carbon nanotubes, wherein, the CNT of each described semiconductor crystal and semiconductor crystal parcel forms a heterojunction semiconductor；Position the source region on the heterogeneous semiconductor drain region tied and one section of CNT being connected with the heterojunction semiconductor；Control the drain electrode in drain region deposition diode, in the source electrode of source region deposition diode, wherein, one section of CNT of the drain electrode, the source electrode, the heterojunction semiconductor of the deposition drain electrode and the deposition source electrode forms a nanotube diode.Scheme provided by the invention can break through the physics limit that Moore's Law is brought.
Description
Technical field
The present invention relates to technical field of electronic devices, the preparation method of more particularly to a kind of nanotube diode and the pole of nanometer two
Pipe.
Background technology
Diode is a kind of important electronic component, and its most important feature is unilateral conduction, i.e., only allow electric current by
Single direction flows through.Unilateral conduction based on diode can realize a variety of circuit functions, for example, logic gates, rectification,
Switch etc..Thus, diode is widely used in each class of electronic devices.
At present, silicon substrate Schottky diode is mainly used, is prepared by deposited metal on silicon semiconductor.
But the size of existing silicon substrate Schottky diode can not break through the physics limit that Moore's Law is brought.
The content of the invention
The embodiments of the invention provide a kind of preparation method of nanotube diode and nanotube diode, it is mole fixed to break through
Restrain the physics limit brought.
In a first aspect, the embodiments of the invention provide a kind of preparation method of nanotube diode, CNT is prepared；Also wrap
Include：
At least one semiconductor crystal is deposited on the carbon nanotubes, wherein, each described semiconductor crystal is with being somebody's turn to do
The CNT of semiconductor crystal parcel forms a heterojunction semiconductor；
The one section of carbon for positioning the heterogeneous semiconductor drain region tied and being connected with the heterojunction semiconductor is received
Source region on mitron；
The drain electrode in drain region deposition diode is controlled, the source electrode of diode is deposited in the source region, its
In, the drain electrode, the source electrode, the heterojunction semiconductor for depositing the drain electrode and one section of CNT for depositing the source electrode
Form a nanotube diode.
Preferably,
It is described to position the heterogeneous semiconductor drain region tied and one section be connected with the heterojunction semiconductor
Source region on CNT, including：
Each section of carbon for positioning the heterojunction semiconductor by ESEM and being connected with the heterojunction semiconductor is received
Mitron；
By spin coating photoresist mode, in the heterojunction semiconductor and be connected with the heterojunction semiconductor each section
Protective layer is deposited on CNT, wherein, the spin coating photoresist rotating speed is 2000r/min~4000r/min, spin coating photoresist
Shi Changwei 30s~60s；
The protective layer is covered using the mask plate of target shape, wherein the mask plate of the target shape is comprising hollow
Drain shape and source electrode shape, wherein, the drain electrode shape and the heterojunction semiconductor are corresponding, the source electrode shape and with
One section of connected CNT of the heterojunction semiconductor is corresponding；
The protective layer corresponding to the drain electrode shape and the source electrode shape is exposed, and controls the exposure time to be
30s~60s；
The protective layer after exposure is removed using developer solution, obtains the drain region and the source region.
Preferably,
The control deposits the drain electrode of diode in the drain region, in the source of source region deposition diode
Pole, including：
Metal deposit is carried out under vacuum, to deposit the drain electrode in the drain region, in the source region
Deposit the source electrode；
The protective layer is dissolved using organic solvent.
Preferably,
It is described to carry out metal deposit under vacuum, to deposit the drain electrode in the drain region, in the source electrode
Source electrode described in area deposition, including：
Under vacuum, it is in the drain region and the source region deposit thickness respectively by the first metal
10nm~50nm the first metal layer, it is in the drain region and the source region deposit thickness respectively by the second metal
50nm~300nm second metal layer, wherein, the first metal layer in the source region is with the CNT being connected
Ohmic contact；
First metal, including：Any one in titanium, ruthenium, rhodium, palladium, osmium, iridium and platinum；
Second metal, including：Any one in gold, silver, iron, nickel, lead and copper.
Preferably,
It is described to prepare CNT, including：
Transition metal chloride solution is smeared on a silicon substrate, will be coated with the silicon substrate of the transition metal chloride solution
Plate is placed in reactor, and heats the reactor to 600 DEG C -1000 DEG C, and being passed through hydrogen into the reactor is aoxidized
Reduction reaction；After the redox reaction terminates, the reactor is heated to 900 DEG C -1100 DEG C, to the reactor
In be passed through carbon source gas, hydrogen and vapor composition mixed gas, to grow the CNT on the silicon substrate.
Preferably,
It is described to deposit at least one semiconductor crystal on the carbon nanotubes, including：
Metal is placed in thermal station, the thermal station is heated to 350 DEG C -500 DEG C, makes the metal aoxidize to be formed in atmosphere
Metal oxide, the metal oxide distil to form gaseous metal hydroxide, control the gaseous metal hydroxide with it is described
CNT contacts 10min-60min, to deposit at least one semiconductor crystal on the carbon nanotubes, wherein, institute
Metal is stated, including：Any one in molybdenum, tungsten and zinc.
Second aspect, the embodiments of the invention provide a kind of nanotube diode, including：CNT, it is deposited on the carbon
Semiconductor crystal, source electrode and drain electrode on nanotube, wherein,
The CNT composition heterojunction semiconductor of the semiconductor crystal and semiconductor crystal parcel；
The drain electrode is deposited on the semiconductor crystal；
The source electrode is deposited on one section of CNT being connected with the heterojunction semiconductor.
Preferably,
The drain electrode, including：The second gold medal that the first metal layer and thickness that thickness is 10nm~50nm are 50nm~300nm
Belong to layer；
The source electrode, including：The second gold medal that the first metal layer and thickness that thickness is 10nm~50nm are 50nm~300nm
Belong to layer；
The first metal layer in the source electrode and one section of CNT being connected with the heterojunction semiconductor connect for ohm
Touch；
First metal, including：Any one in titanium, ruthenium, rhodium, palladium, osmium, iridium and platinum；
Second metal, including：Any one in gold, silver, iron, nickel, lead and copper.
Preferably,
The semiconductor crystal is hexagon two-dimensional layer crystal, size 100nm~2000nm.
Preferably,
A diameter of 1nm-4nm of the CNT.
The embodiments of the invention provide a kind of preparation method of nanotube diode and nanotube diode, wherein, in nanometer two
In the preparation process of pole pipe, at least one semiconductor crystal is deposited on the carbon nanotubes by way of vapour deposition, and half
Drain, source electrode are distinguished on conductor crystal and CNT, and then obtains nanotube diode.In the present invention, preparation process is adopted
With the method for " from bottom to top ", using Van der Waals epitaxial growth mechanism, reduce the complexity that the operations such as subsequent transfer are brought.Root
According to Moore's Law, whenever the computing capability of diode doubles, the size of diode can reduce half, still, existing silicon substrate
The size of Schottky diode can not continue to reduce and break through the physics limit close to physics limit, and prepared by the present invention
The size of nanotube diode, which can be reduced to, breaks through the physics limit.
Brief description of the drawings
In order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
There is the required accompanying drawing used in technology description to be briefly described, it should be apparent that, drawings in the following description are the present invention
Some embodiments, for those of ordinary skill in the art, on the premise of not paying creative work, can also basis
These accompanying drawings obtain other accompanying drawings.
Fig. 1 is a kind of flow chart of the preparation method for nanotube diode that one embodiment of the invention provides；
Fig. 2 is a kind of scanning electron microscope (SEM) photograph for CNT that one embodiment of the invention provides；
Fig. 3 is a kind of transmission electron microscope of the CNT for one molybdenum oxide crystal of deposition that one embodiment of the invention provides
Figure；
Fig. 4 is a kind of ESEM of the CNT for the multiple molybdenum oxide crystal of deposition that one embodiment of the invention provides
Figure；
Fig. 5 is the structural representation for a kind of nanometer of diode that one embodiment of the invention provides；
Fig. 6 is a kind of scanning electron microscope (SEM) photograph of the electronic device for deposition multiple electrodes that one embodiment of the invention provides；
Fig. 7 is the output characteristic curve for a kind of nanometer of diode that one embodiment of the invention provides.
Embodiment
To make the purpose, technical scheme and advantage of the embodiment of the present invention clearer, below in conjunction with the embodiment of the present invention
In accompanying drawing, the technical scheme in the embodiment of the present invention is clearly and completely described, it is clear that described embodiment is
Part of the embodiment of the present invention, rather than whole embodiments, based on the embodiment in the present invention, those of ordinary skill in the art
The every other embodiment obtained on the premise of creative work is not made, belongs to the scope of protection of the invention.
Experimental method used in following embodiments is conventional method unless otherwise specified.In following embodiments, institute
Various kinds of equipment, reagent and the material used is that conventional commercial can obtain unless otherwise noted.
As shown in figure 1, the embodiments of the invention provide a kind of preparation method of nanotube diode, this method can include with
Lower step：
Step 101：Prepare CNT；
Step 102：At least one semiconductor crystal is deposited on the carbon nanotubes, wherein, each semiconductor crystal is with being somebody's turn to do
The CNT of semiconductor crystal parcel forms a heterojunction semiconductor；
Step 103：The positioning heterogeneous semiconductor drain region tied and one section of carbon being connected with heterojunction semiconductor are received
Source region on mitron；
Step 104：The drain electrode in drain region deposition diode is controlled, the source electrode of diode is deposited in source region, its
In, drain electrode, source electrode, drain heterojunction semiconductor and deposit source electrode one section of CNT form the pole of nanometer two
Pipe.
In the embodiment of the present invention shown in Fig. 1, in the preparation process of nanotube diode, by way of vapour deposition
At least one semiconductor crystal is deposited on the carbon nanotubes, and drain, source are distinguished on semiconductor crystal and CNT
Pole, and then obtain nanotube diode.In the present invention, preparation process is given birth to using method " from bottom to top " using Van der Waals extension
Long mechanism, reduce the complexity that the operations such as subsequent transfer are brought.According to Moore's Law, whenever the computing capability of diode turns over one
Times, the size of diode can reduce half, and still, the size of existing silicon substrate Schottky diode is close to physics limit, nothing
Method continues to reduce and breaks through the physics limit, and the size of nanotube diode prepared by the present invention can be reduced to and break through the physics
The limit.
Meanwhile semiconductor crystal forms heterojunction semiconductor with CNT, the heterogeneous semiconductor becomes Van der Waals extension
Growth interface, compared to the interface of silicon conductor deposit metal electrodes, the electron transport performance at Van der Waals epitaxial growth interface is obvious
It is better than the interface of silicon conductor deposit metal electrodes, there is lower Schottky barrier so that heterojunction semiconductor has unidirectional defeated
The asymmetrical characteristic gone out, that is, be presented rectifier phenomena.
The preparation of nanotube diode may be summarized to be：
S1 passes through chemical vapor deposition for carbon nanotubes；
S2 deposited semiconductor crystal on the carbon nanotubes；
S3 depositing electrodes on semiconductor crystal, CNT.
Above three process will be described in detail for following examples.
(1) chemical vapor deposition for carbon nanotubes is passed through.
In order to obtain CNT, in one embodiment of the invention, carbon nanometer is prepared by chemical vapour deposition technique
Pipe.CNT is prepared, including：
Transition metal chloride solution is smeared on a silicon substrate, and the silicon substrate for being coated with transition metal chloride solution is put
In reactor, and heating response device is passed through hydrogen into reactor and carries out redox reaction to 600 DEG C -1000 DEG C；Treat oxygen
After change reduction reaction terminates, reactor is heated to 900 DEG C -1100 DEG C, carbon source gas, hydrogen and vapor are passed through into reactor
The mixed gas of composition, to grow CNT on a silicon substrate.
Wherein, the chemical vapour deposition technique is catalyst using the metal nanoparticle obtained by redox reaction,
It is oriented to and apical growth mechanism, growth CNT using air-flow.Transition metal chloride solution can be ethanol solution or
The aqueous solution.The heating-up temperature of reactor changes according to the difference of transition metal chloride solution.
When transition metal chloride solutions are iron chloride ethanol solution, CNT is prepared, including：
A1：0.0002mol/L iron chloride ethanol solutions are smeared on a silicon substrate, will be coated with the silicon of iron chloride ethanol solution
Substrate is placed in reactor, and heating response device is passed through hydrogen into reactor and carries out redox reaction, obtain to 900 DEG C
Iron nano-particle；
A2：After reduction reaction to be oxidized terminates, reactor is heated to 1005 DEG C, carbon source gas, hydrogen are passed through into reactor
The mixed gas of gas and vapor composition, grows CNT, the carbon nanometer on a silicon substrate by catalyst of iron nano-particle
The structure of pipe is as shown in Figure 2.
(2) deposited semiconductor crystal on the carbon nanotubes.
In order to realize heterojunction semiconductor on the carbon nanotubes, in one embodiment of the invention, on the carbon nanotubes
At least one semiconductor crystal is deposited, including：
Metal is placed in thermal station, heating thermal station makes metal aoxidize to form metal oxidation in atmosphere to 350 DEG C -500 DEG C
Thing, metal oxide distil to form gaseous metal hydroxide, and control gaseous metal hydroxide contacts 10min- with CNT
60min, to deposit at least one semiconductor crystal on the carbon nanotubes, wherein, metal, including：It is any one in molybdenum, tungsten and zinc
Kind.
Each semiconductor crystal is hexagon two-dimensional layer crystal.
When metal is molybdenum, at least one semiconductor crystal is deposited on the carbon nanotubes, including：
Molybdenum sheet is placed in thermal station, heating thermal station makes metal molybdenum aoxidize to form molybdenum oxide in atmosphere to 500 DEG C, aoxidizes
Molybdenum distils to form gaseous oxidation molybdenum, and control gaseous oxidation molybdenum contacts 30min with the CNT that above-described embodiment is prepared, with
Multiple molybdenum oxide crystal are deposited on the carbon nanotubes, as shown in Figure 3 and Figure 4.
Semiconductor crystal wraps up CNT, forms heterojunction semiconductor with CNT, the heterogeneous semiconductor becomes model
Moral China epitaxial growth interface, Schottky barrier is relatively low when electronics injects semiconductor by metal.
(3) depositing electrode on semiconductor crystal, CNT.
In one embodiment of the invention, the drain region and and heterojunction semiconductor that positioning heterogeneous semiconductor is tied
Source region on one section of connected CNT, including：
Heterojunction semiconductor and each section of CNT being connected with heterojunction semiconductor are positioned by ESEM；
By spin coating photoresist mode, in heterojunction semiconductor and each section of CNT being connected with heterojunction semiconductor
Upper deposition protective layer, wherein, spin coating photoresist rotating speed is 2000r/min~4000r/min, a length of 30s during spin coating photoresist~
60s；
Protective layer is covered using the mask plate of target shape, the wherein mask plate of target shape includes hollow drain electrode shape
With source electrode shape, wherein, drain shape and heterojunction semiconductor it is corresponding, source electrode shape and be connected with heterojunction semiconductor one
Section CNT is corresponding；
Protective layer corresponding to drain electrode shape and source electrode shape is exposed, and it is 30s~60s to control exposure time；
The protective layer after exposure is removed using developer solution, obtains drain region and source region.
The drain electrode in drain region deposition diode is controlled, in the source electrode of source region deposition diode, including：
Metal deposit is carried out under vacuum, so that in drain region drain, source electrode is deposited in source region；
Protective layer is dissolved using organic solvent.
Wherein, organic solvent can include：Acetone, dimethylformamide, toluene etc..
Metal deposit is carried out under vacuum, so that in drain region drain, source electrode, bag are deposited in source region
Include：
Under vacuum, it is respectively 10nm~50nm in drain region and source region deposit thickness by the first metal
The first metal layer, by the second metal respectively in second that drain region and source region deposit thickness are 50nm~300nm
Metal level, wherein, the first metal layer in source region is Ohmic contact with the CNT being connected；
First metal, including：Any one in titanium, ruthenium, rhodium, palladium, osmium, iridium and platinum；
Second metal, including：Any one in gold, silver, iron, nickel, lead and copper.
The structure of the nanotube diode obtained by above-described embodiment is as shown in figure 5, the nanotube diode includes：Carbon nanometer
Pipe 501, the semiconductor crystal 502 being deposited on CNT, source electrode 503 and drain electrode 504, wherein,
Semiconductor crystal 502 forms heterojunction semiconductor with the CNT 501 that semiconductor crystal 502 wraps up；
Drain electrode 504 is deposited on semiconductor crystal 502；
Source electrode 503 is deposited on one section of CNT 501 being connected with heterojunction semiconductor.
Wherein, drain electrode 504, including：The first metal layer and thickness that thickness is 10nm~50nm are the of 50nm~300nm
Two metal levels；
Source electrode 503, including：The second gold medal that the first metal layer and thickness that thickness is 10nm~50nm are 50nm~300nm
Belong to layer；
The first metal layer in source electrode 503 and one section of CNT being connected with heterojunction semiconductor are Ohmic contact；
First metal, including：Any one in titanium, ruthenium, rhodium, palladium, osmium, iridium and platinum；
Second metal, including：Any one in gold, silver, iron, nickel, lead and copper.
In drain electrode 504, second metal layer is overlying on the first metal layer；In source electrode 503, second metal layer is overlying on first
On metal level.
Electrode deposition process is described in detail so that molybdenum oxide crystal is semiconductor crystal as an example for following examples：
Heterojunction semiconductor and each section of CNT being connected with heterojunction semiconductor are positioned by ESEM；
By spin coating photoresist mode, in heterojunction semiconductor and each section of CNT being connected with heterojunction semiconductor
Upper deposition protective layer, wherein, spin coating photoresist rotating speed is 3000r/min, a length of 30s during spin coating photoresist；
Protective layer is covered using the mask plate of target shape, the wherein mask plate of target shape includes hollow drain electrode shape
With source electrode shape, wherein, drain shape and heterojunction semiconductor it is corresponding, source electrode shape and be connected with heterojunction semiconductor one
Section CNT is corresponding；
Protective layer corresponding to drain electrode shape and source electrode shape is exposed, and it is 30s to control exposure time；
The protective layer after exposure is removed using developer solution, obtains drain region and source region.
Under vacuum, by Titanium respectively in the titanium layer that drain region and source region deposit thickness are 20nm,
By metallic gold respectively in the layer gold that drain region and source region deposit thickness are 100nm, wherein, the titanium layer in source region
It is Ohmic contact with the CNT being connected.
Using acetone solution protective layer, forming the photoresist of protective layer can be dissolved in acetone, and will be heavy on protective layer
Product metal film removes, and obtains nanotube diode.
A diameter of 1nm-4nm of CNT.
It should be noted that based on different demands, can be in semiconductor crystal and heterojunction semiconductor by this method
Multiple electrodes are deposited respectively on two sections of connected CNTs, for example, two drain electrodes are deposited on molybdenum oxide crystal, with partly leading
Two source electrodes are deposited on left section of connected CNT of bulk heterojunction, on right section of CNT being connected with heterojunction semiconductor
A source electrode is deposited, the electronic device of formation is as shown in Figure 6.
To carrying out electricity performance measurement as the nanotube diode that semiconductor crystal is prepared by molybdenum oxide crystal, obtain
Output characteristic curve as shown in fig. 7, it can be seen that positive electrical current increases, reverse electrical current reduces.I.e. just
When anti-energization, because two interface Schottky barriers are different, cause curve of output asymmetric, rectifier phenomena occur.The thing
Tell the truth bright, nanotube diode can break through the physics limit of silicon-based electronic material, in nanometer relative to traditional silicon-based electronic devices
Rectification characteristic is remained in that under size.
Below by way of one embodiment, by preparing overlength carbon nano pipe, and the depositing zinc oxide on overlength carbon nano pipe
Crystal is semiconductor crystal, and based on this, the preparation method of nanotube diode is described in detail：
C1：0.5mol/L tri-chlorination copper liquors are smeared on a silicon substrate, will be coated with the silicon substrate of tri-chlorination copper liquor
Plate is placed in reactor, and heating response device is passed through hydrogen into reactor and carries out redox reaction, obtain copper to 800 DEG C
Nano particle；
C2：After reduction reaction to be oxidized terminates, reactor is heated to 850 DEG C, carbon source gas, hydrogen are passed through into reactor
With the mixed gas of vapor composition, overlength carbon nano pipe, overlength are grown on a silicon substrate by catalyst of copper nano particles
The length of CNT is up to 60cm；.
C3：Zinc metal sheet is placed in thermal station, heating thermal station makes metallic zinc aoxidize to form zinc oxide in atmosphere, oxygen to 400 DEG C
Change zinc to distil to form gaseous oxidation zinc, control gaseous oxidation zinc contacts 45min with above-mentioned CNT, with overlength carbon nano pipe
The upper multiple zincite crystals of deposition.
C4：Heterojunction semiconductor and each section of overlength carbon nanometer being connected with heterojunction semiconductor are positioned by ESEM
Pipe；
C5：By spin coating photoresist mode, in heterojunction semiconductor and each section of overlength being connected with heterojunction semiconductor
Protective layer is deposited on CNT, wherein, spin coating photoresist rotating speed is 3500r/min, a length of 35s during spin coating photoresist；
C6：Protective layer is covered using the mask plate of target shape, the wherein mask plate of target shape includes hollow drain electrode
Shape and source electrode shape, wherein, the shape that drains and heterojunction semiconductor are corresponding, source electrode shape and are connected with heterojunction semiconductor
One section of overlength carbon nano pipe it is corresponding；
C7：Protective layer corresponding to drain electrode shape and source electrode shape is exposed, and it is 35s to control exposure time；
C8：The protective layer after exposure is removed using developer solution, obtains drain region and source region.
C9：Under vacuum, by Titanium respectively in the titanium that drain region and source region deposit thickness are 25nm
Layer, by metallic gold respectively in the layer gold that drain region and source region deposit thickness are 150nm, wherein, in source region
Titanium layer is Ohmic contact with the CNT being connected.
C10：Using acetone solution protective layer, forming the photoresist of protective layer can be dissolved in acetone, and by protective layer
Deposited metal film remove, obtain nanotube diode.
To sum up, each embodiment of the present invention at least has the effect that：
1st, in embodiments of the present invention, in the preparation process of nanotube diode, received by way of vapour deposition in carbon
At least one semiconductor crystal is deposited on mitron, and drain, source electrode are distinguished on semiconductor crystal and CNT, and then
Obtain nanotube diode.In the present invention, preparation process is using method " from bottom to top ", using Van der Waals epitaxial growth mechanism,
Reduce the complexity that the operations such as subsequent transfer are brought.According to Moore's Law, whenever the computing capability of diode doubles, two poles
The size of pipe can reduce half, and still, the size of existing silicon substrate Schottky diode can not continue to subtract close to physics limit
It is small and break through the physics limit, and the size of nanotube diode prepared by the present invention can be reduced to and break through the physics limit.
2nd, in embodiments of the present invention, semiconductor crystal forms heterojunction semiconductor, the heterogeneous semiconductor with CNT
Become Van der Waals epitaxial growth interface, compared to the interface of silicon conductor deposit metal electrodes, the electricity at Van der Waals epitaxial growth interface
Son transports the interface that performance is significantly better than silicon conductor deposit metal electrodes, has lower Schottky barrier so that semiconductor is different
Matter knot has the asymmetrical characteristic unidirectionally exported, that is, rectifier phenomena is presented.
3rd, in embodiments of the present invention, multiple semiconductor crystals can be deposited on the carbon nanotubes simultaneously, each is partly led
Body crystal can form a nanotube diode by electrode deposition.Therefore, this method prepares the speed of nanotube diode.
4th, in embodiments of the present invention, by photoresist in semiconductor crystal and each section of carbon being connected with heterojunction semiconductor
Protective layer is generated on nanotube, to realize the spy in semiconductor crystal and the target phase CNT being connected with heterojunction semiconductor
Determine area deposition electrode, can be by changing exposure position, adjustment electrode deposition position.
5th, in embodiments of the present invention, can be realized while in semiconductor crystal and and heterojunction semiconductor by this method
Multiple electrodes are deposited respectively on each section of connected CNT, to realize different Research Requirements.
It should be noted that herein, such as first and second etc relational terms are used merely to an entity
Or operation makes a distinction with another entity or operation, and not necessarily require or imply and exist between these entities or operation
Any this actual relation or order.Moreover, term " comprising ", "comprising" or its any other variant be intended to it is non-
It is exclusive to include, so that process, method, article or equipment including a series of elements not only include those key elements,
But also the other element including being not expressly set out, or also include solid by this process, method, article or equipment
Some key elements.In the absence of more restrictions, the key element limited by sentence " including one ", is not arranged
Except other identical factor in the process including key element, method, article or equipment being also present.
It is last it should be noted that：Presently preferred embodiments of the present invention is these are only, is merely to illustrate the technical side of the present invention
Case, it is not intended to limit the scope of the present invention.It is any modification for being made within the spirit and principles of the invention, equivalent
Replace, improve etc., it is all contained in protection scope of the present invention.
Claims (10)
1. a kind of preparation method of nanotube diode, it is characterised in that prepare CNT；Also include：
At least one semiconductor crystal is deposited on the carbon nanotubes, wherein, each described semiconductor crystal is partly led with this
The CNT of body crystal parcel forms a heterojunction semiconductor；
Position the drain region that the heterogeneous semiconductor is tied and one section of CNT being connected with the heterojunction semiconductor
On source region；
The drain electrode in drain region deposition diode is controlled, in the source electrode of source region deposition diode, wherein, institute
State one section of CNT composition of drain electrode, the source electrode, the heterojunction semiconductor of the deposition drain electrode and the deposition source electrode
One nanotube diode.
2. the preparation method of nanotube diode according to claim 1, it is characterised in that the positioning semiconductor is different
Source region on drain region that matter is tied and one section of CNT being connected with the heterojunction semiconductor, including：
Each section of CNT that the heterojunction semiconductor is positioned by ESEM and is connected with the heterojunction semiconductor；
By spin coating photoresist mode, received in the heterojunction semiconductor and each section of carbon being connected with the heterojunction semiconductor
Protective layer is deposited on mitron, wherein, the spin coating photoresist rotating speed is 2000r/min~4000r/min, spin coating photoresist duration
For 30s~60s；
The protective layer is covered using the mask plate of target shape, wherein the mask plate of the target shape includes hollow drain electrode
Shape and source electrode shape, wherein, it is described drain electrode shape and the heterojunction semiconductor it is corresponding, the source electrode shape and with it is described
One section of connected CNT of heterojunction semiconductor is corresponding；
The protective layer corresponding to the drain electrode shape and the source electrode shape is exposed, and it is 30s to control exposure time
~60s；
The protective layer after exposure is removed using developer solution, obtains the drain region and the source region.
3. preparation method according to claim 2, it is characterised in that the control deposits diode in the drain region
Drain electrode, the source region deposition diode source electrode, including：
Metal deposit is carried out under vacuum, to deposit the drain electrode in the drain region, is deposited in the source region
The source electrode；
The protective layer is dissolved using organic solvent.
4. the preparation method of nanotube diode according to claim 3, it is characterised in that
It is described to carry out metal deposit under vacuum, to deposit the drain electrode in the drain region, in the source region
The source electrode is deposited, including：
Under vacuum, by the first metal respectively the drain region and the source region deposit thickness be 10nm~
50nm the first metal layer, by the second metal respectively the drain region and the source region deposit thickness be 50nm~
300nm second metal layer, wherein, the first metal layer in the source region connects with the CNT being connected for ohm
Touch；
First metal, including：Any one in titanium, ruthenium, rhodium, palladium, osmium, iridium and platinum；
Second metal, including：Any one in gold, silver, iron, nickel, lead and copper.
5. the preparation method of nanotube diode according to any one of claims 1 to 4, it is characterised in that
It is described to prepare CNT, including：
Transition metal chloride solution is smeared on a silicon substrate, and the silicon substrate for being coated with the transition metal chloride solution is put
In reactor, and the reactor is heated to 600 DEG C -1000 DEG C, hydrogen is passed through into the reactor and carries out redox
Reaction；After the redox reaction terminates, the reactor is heated to 900 DEG C -1100 DEG C, led into the reactor
Enter the mixed gas of carbon source gas, hydrogen and vapor composition, to grow the CNT on the silicon substrate.
6. the preparation method of nanotube diode according to any one of claims 1 to 4, it is characterised in that
It is described to deposit at least one semiconductor crystal on the carbon nanotubes, including：
Metal is placed in thermal station, the thermal station is heated to 350 DEG C -500 DEG C, makes the metal aoxidize to form metal in atmosphere
Oxide, the metal oxide distil to form gaseous metal hydroxide, control the gaseous metal hydroxide to be received with the carbon
Mitron contacts 10min-60min, to deposit at least one semiconductor crystal on the carbon nanotubes, wherein, the gold
Category, including：Any one in molybdenum, tungsten and zinc.
A kind of 7. nanotube diode, it is characterised in that including：CNT, the semiconductor die being deposited on the CNT
Body, source electrode and drain electrode, wherein,
The CNT composition heterojunction semiconductor of the semiconductor crystal and semiconductor crystal parcel；
The drain electrode is deposited on the semiconductor crystal；
The source electrode is deposited on one section of CNT being connected with the heterojunction semiconductor.
8. nanotube diode according to claim 7, it is characterised in that
The drain electrode, including：The second metal that the first metal layer and thickness that thickness is 10nm~50nm are 50nm~300nm
Layer；
The source electrode, including：The second metal that the first metal layer and thickness that thickness is 10nm~50nm are 50nm~300nm
Layer；
The first metal layer in the source electrode and one section of CNT being connected with the heterojunction semiconductor are Ohmic contact；
First metal, including：Any one in titanium, ruthenium, rhodium, palladium, osmium, iridium and platinum；
Second metal, including：Any one in gold, silver, iron, nickel, lead and copper.
9. nanotube diode according to claim 7, it is characterised in that
The semiconductor crystal is hexagon two-dimensional layer crystal, size 100nm-2000nm.
10. according to any described nanotube diode in claim 7-9, it is characterised in that
A diameter of 1nm-4nm of the CNT.
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