CN107527959A - A kind of multilayer carries the AZO films of matte - Google Patents
A kind of multilayer carries the AZO films of matte Download PDFInfo
- Publication number
- CN107527959A CN107527959A CN201611188632.0A CN201611188632A CN107527959A CN 107527959 A CN107527959 A CN 107527959A CN 201611188632 A CN201611188632 A CN 201611188632A CN 107527959 A CN107527959 A CN 107527959A
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- Prior art keywords
- azo
- azo films
- layer
- films
- light
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- 230000003746 surface roughness Effects 0.000 claims abstract description 4
- 239000013078 crystal Substances 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 abstract description 3
- 230000031700 light absorption Effects 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 34
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 238000011161 development Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000003595 mist Substances 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
- H01L31/022483—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of zinc oxide [ZnO]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The present invention discloses the AZO films that a kind of multilayer carries matte, including the bottom AZO films, intermediate layer AZO films and top layer AZO films being sequentially overlapped, the crystallite dimension of each layer AZO films increases successively from the bottom to top, the surface of every layer of AZO film is in concaveconvex structure, and the surface roughness of each layer AZO films increases successively from the bottom to top；The AZO films of various grain sizes are superimposed, and crystallite dimension becomes larger from the bottom to top, each layer of AZO film surface all carries concaveconvex structure, so as to obtain the AZO films of multilayer suede structure so that sunshine forms refraction and scattering to light after incidence, the light incided in film is distributed to all angles, so as to improve the light path of incident light in the battery, increase the absorption of light, increase the formation probability of electron hole.
Description
Technical field
The present invention relates to technical field of thin-film solar, specifically a kind of multilayer carries the AZO films of matte.
Background technology
Under the situation of world today's energy crisis getting worse, research of the people to solar cell achieves very big
Development.The solar cell of high quality, particularly thin-film solar cells, its performance are strongly dependent on as window electrode
The performance of transparent conductive film layer.
ZnO at present:It is the most frequently used that Al transparent conductive materials with some advantages of its own become window layer of solar battery
Material.Therefore, the preparation of research AZO transparent conductive film is integrated with the preparation technology of solar cell, for the sun
The raising of energy battery phototranstormation efficiency and the development of whole photovoltaic industry are significant.
The content of the invention
It is an object of the invention to provide the AZO films that a kind of multilayer carries matte, the film can improve incident light and exist
Light path in battery, increase the absorption of light, increase the formation probability of electron hole.
The technical solution adopted for the present invention to solve the technical problems is：
A kind of multilayer carries the AZO films of matte, including bottom AZO films, intermediate layer AZO films and the top layer being sequentially overlapped
AZO films, the crystallite dimension of each layer AZO films increase successively from the bottom to top, and the surface of every layer of AZO film is in concaveconvex structure,
The surface roughness of each layer AZO films increases successively from the bottom to top.
Further, the crystallite dimension of the bottom AZO films is 200~300nm, the crystal grain chi of intermediate layer AZO films
It is very little be 350~450nm, the crystallite dimension of top layer AZO films be 500~600 nm.
Further, the thickness of every layer of AZO film is 200~250nm.
The invention has the advantages that the AZO films of various grain sizes are superimposed, and crystallite dimension is gradual from the bottom to top
Become big, each layer of AZO film surface all carries concaveconvex structure, so as to obtain the AZO films of multilayer suede structure so that sunshine
After incidence, refraction and scattering to light are formed, the light incided in film is distributed to all angles, so as to improve incidence
The light path of light in the battery, increases the absorption of light, increases the formation probability of electron hole.
Brief description of the drawings
The present invention is further described with reference to the accompanying drawings and examples：
Fig. 1 is the structural representation of the present invention.
Embodiment
As shown in figure 1, the present invention, which provides a kind of multilayer, carries the AZO films of matte, including the bottom AZO being sequentially overlapped thin
Film 1, intermediate layer AZO films 2 and top layer AZO films 3, the crystallite dimension of each layer AZO films increases successively from the bottom to top, as excellent
Choosing, the crystallite dimensions of bottom AZO films 1 is 200~300nm, the crystallite dimension of intermediate layer AZO films be 350~450nm,
The crystallite dimension of top layer AZO films is 500~600 nm；As preferable, the thickness of every layer of AZO film is 200~
250nm；The surface of every layer of AZO film is in concaveconvex structure, and the surface roughness of each layer AZO films increases successively from the bottom to top,
Form the AZO films of multilayer suede structure.
AZO films obtained above are carried out into transmission measurement, mist degree test, resistivity measurement and XRD respectively to test, can
See light mean transmissivity be 84.7%, mist degree 17.6%, resistivity be 4.8*10-4 Ω cm, XRD spectrum shows AZO films 2
There is strong diffraction maximum, corresponding hexagonal wurtzite ZnO structures in θ=34.4 °（002）Diffraction maximum.
The above described is only a preferred embodiment of the present invention, any formal limitation not is made to the present invention；Appoint
What those skilled in the art, without departing from the scope of the technical proposal of the invention, all using the side of the disclosure above
Method and technology contents make many possible changes and modifications to technical solution of the present invention, or are revised as the equivalent reality of equivalent variations
Apply example.Therefore, every content without departing from technical solution of the present invention, the technical spirit according to the present invention are done to above example
Any simple modification, equivalent substitution, equivalence changes and modification, still fall within the range of technical solution of the present invention protects.
Claims (3)
1. a kind of multilayer carries the AZO films of matte, it is characterised in that including be sequentially overlapped bottom AZO films, intermediate layer
AZO films and top layer AZO films, the crystallite dimension of each layer AZO films increase successively from the bottom to top, the surface of every layer of AZO film
It is in concaveconvex structure, the surface roughness of each layer AZO films increases successively from the bottom to top.
2. a kind of multilayer according to claim 1 carries the AZO films of matte, it is characterised in that the bottom AZO films
Crystallite dimension be 200~300nm, the crystallite dimension of intermediate layer AZO films is 350~450nm, the crystal grain of top layer AZO films
Size is 500~600 nm.
3. a kind of multilayer according to claim 1 or 2 carries the AZO films of matte, it is characterised in that every layer of AZO film
Thickness be 200~250nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611188632.0A CN107527959A (en) | 2016-12-21 | 2016-12-21 | A kind of multilayer carries the AZO films of matte |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611188632.0A CN107527959A (en) | 2016-12-21 | 2016-12-21 | A kind of multilayer carries the AZO films of matte |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107527959A true CN107527959A (en) | 2017-12-29 |
Family
ID=60748143
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611188632.0A Pending CN107527959A (en) | 2016-12-21 | 2016-12-21 | A kind of multilayer carries the AZO films of matte |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107527959A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101582461A (en) * | 2009-03-24 | 2009-11-18 | 新奥光伏能源有限公司 | Novel multilayer transparent conductive film structure and preparation method thereof |
| CN102199758A (en) * | 2011-05-13 | 2011-09-28 | 南开大学 | Method for growing ZnO-TCO thin film with suede structure and application |
| CN102433545A (en) * | 2011-12-26 | 2012-05-02 | 南开大学 | Suede-structured ZnO film prepared by alternative growth technology and application thereof |
-
2016
- 2016-12-21 CN CN201611188632.0A patent/CN107527959A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101582461A (en) * | 2009-03-24 | 2009-11-18 | 新奥光伏能源有限公司 | Novel multilayer transparent conductive film structure and preparation method thereof |
| CN102199758A (en) * | 2011-05-13 | 2011-09-28 | 南开大学 | Method for growing ZnO-TCO thin film with suede structure and application |
| CN102433545A (en) * | 2011-12-26 | 2012-05-02 | 南开大学 | Suede-structured ZnO film prepared by alternative growth technology and application thereof |
Non-Patent Citations (1)
| Title |
|---|
| 徐玮: "《Al掺杂ZnO透明导电薄膜的制备及性能研究》", 《中国优秀硕士学位论文全文数据库》 * |
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| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20171229 |
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| RJ01 | Rejection of invention patent application after publication |