CN107527864A - A kind of memory device, tungsten forming core layer and preparation method thereof - Google Patents
A kind of memory device, tungsten forming core layer and preparation method thereof Download PDFInfo
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- CN107527864A CN107527864A CN201710770824.0A CN201710770824A CN107527864A CN 107527864 A CN107527864 A CN 107527864A CN 201710770824 A CN201710770824 A CN 201710770824A CN 107527864 A CN107527864 A CN 107527864A
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- forming core
- chemical vapor
- core layer
- tungsten
- depsotition equipment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
- H01L21/76876—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers for deposition from the gas phase, e.g. CVD
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
Abstract
This application discloses a kind of memory device, tungsten forming core layer and preparation method thereof, wherein, the preparation method of the tungsten forming core layer includes：The thicknesses of layers curve of the chemical vapor depsotition equipment is obtained, the corresponding relation of the film number and tungsten forming core thickness degree that have the chemical vapor depsotition equipment cavity to be prepared after initializing is recorded in the thicknesses of layers curve；Chemical vapor depsotition equipment after being initialized according to the thicknesses of layers curve to cavity pre-processes, so that the chemical vapor depsotition equipment is in the stable work area of the thicknesses of layers curve；Tungsten forming core layer is prepared using pretreated chemical vapor depsotition equipment.Tungsten forming core layer is prepared using this method, the homogeneous purpose of the tungsten forming core thickness degree of preparation can be realized, simplify the selection of the preparation technology parameter of follow-up tungsten body layer, the quality of the tungsten body layer prepared on tungsten forming core layer is ensure that, so as to improve the electric property of the memory device based on above-mentioned tungsten forming core layer and the preparation of tungsten body layer.
Description
Technical field
The application is related to technical field of semiconductors, more specifically to a kind of memory device, tungsten forming core layer and its preparation
Method.
Background technology
In dynamic random access memory (Dynamic Random Access Memory, DRAM) and three dimensional NAND flash memory
In the preparation technologies of memory device such as (3D NAND flash) device, tungsten/tungsten nitride material is widely used in after copper wiring
Interconnection architecture in.
Due in the preparation process of above-mentioned memory device, due to the presence on barrier layer so that tungsten forming core layer (W
Nucleation growth) can only use and be based on silane (SiH4) pulse nucleation mode (Pulse Nucleation Layer,
PNL) technique.In the process, generally handed over by chemical vapor deposition (Chemical Vapor Deposition, CVD) board
For the mode that silane and tungsten hexafluoride react on a preset condition based is passed through, one layer of tungsten forming core layer is formed on wafer, afterwards
Tungsten body layer is prepared based on tungsten forming core layer.
But found in actual production process, when preparing tungsten forming core layer using pulse nucleation mode, the thickness of tungsten forming core layer
Degree can change as chemical vapor depsotition equipment prepares number, so as to result in the thickness of the tungsten forming core layer on wafer
Difference is larger, and the selection for the preparation technology parameter of follow-up tungsten body layer adds difficulty, easily occurs being formed in tungsten forming core layer
On tungsten body layer inside occur cavity, or even can not on tungsten forming core layer deposits tungsten body layer situation occur.
The content of the invention
In order to solve the above technical problems, the invention provides a kind of memory device, tungsten forming core layer and preparation method thereof, with reality
The purpose of the homogeneous tungsten forming core layer of thickness is now prepared based on pulse nucleation technique.
To realize above-mentioned technical purpose, the embodiments of the invention provide following technical scheme：
A kind of preparation method of tungsten forming core layer, applied to chemical vapor depsotition equipment；The preparation method of the tungsten forming core layer
Including：
The thicknesses of layers curve of the chemical vapor depsotition equipment is obtained, record has describedization in the thicknesses of layers curve
Learn the corresponding relation of the film number and tungsten forming core thickness degree that are prepared after the initialization of vapor deposition apparatus cavity；
Chemical vapor depsotition equipment after being initialized according to the thicknesses of layers curve to cavity pre-processes, so that institute
State the stable work area that chemical vapor depsotition equipment is in the thicknesses of layers curve；
Tungsten forming core layer is prepared using pretreated chemical vapor depsotition equipment.
Optionally, the thicknesses of layers curve for obtaining the chemical vapor depsotition equipment includes：
Chemical vapor depsotition equipment after being initialized using cavity carries out the preparation of multiple tungsten forming core layer, and records system every time
The thickness of standby tungsten forming core layer and the corresponding relation for preparing number；
Using the thickness of the tungsten forming core layer prepared every time the thicknesses of layers curve is drawn with preparing the corresponding relation of number.
Optionally, it is described that the chemical vapor depsotition equipment after cavity initialization is carried out in advance according to the thicknesses of layers curve
Processing, so that the stable work area that the chemical vapor depsotition equipment is in the thicknesses of layers curve includes：
According to the unstable work section length of the thicknesses of layers curve, preset times are determined；
Prepared by the tungsten forming core layer that the chemical vapor depsotition equipment after being initialized using cavity carries out preset times, so that described
Chemical vapor depsotition equipment is in the stable work area of the thicknesses of layers curve.
Optionally, it is described initialized using cavity after chemical vapor depsotition equipment carry out preset times tungsten forming core layer system
It is standby to include：
Chemical vapor depsotition equipment after being initialized using cavity, tungsten is prepared respectively in the warming-up crystal column surface of predetermined number
Forming core layer, the predetermined number are equal to the preset times；
Or
Chemical vapor depsotition equipment after being initialized using cavity, repeat the preparation of tungsten forming core layer under the conditions of without wafer
Technique preset times.
Optionally, it is described to utilize pretreated chemical vapor depsotition equipment also to include after preparing tungsten forming core layer：
It is described when W film gross thickness prepared by pretreated chemical vapor depsotition equipment is more than or equal to preset value
Chemical vapor depsotition equipment carries out cavity initialization process, and the chemical vapor depsotition equipment after the initialization of Returning utilization cavity enters
Prepared by the tungsten forming core layer of row preset times, so that the chemical vapor depsotition equipment is in the stable work of the thicknesses of layers curve
The step of making area.
Optionally, it is described that chemical vapor depsotition equipment progress cavity initialization process is included：
The cavity of the chemical vapor depsotition equipment is cleaned using chemical reaction process or gas purging process, with
Remove the cavity inner wall of the chemical vapor depsotition equipment and the tungsten forming core layer intermediate product of gas output device surface attachment.
Optionally, the pretreated chemical vapor depsotition equipment of the utilization, which prepares tungsten forming core layer, includes：
Silane and tungsten hexafluoride are alternately passed through by the gas device of the chemical vapor depsotition equipment, with crystal column surface
Form the tungsten forming core layer.
A kind of tungsten forming core layer, prepared as the preparation method of the tungsten forming core layer described in any of the above-described.
A kind of memory device, including the tungsten forming core layer described in one as described above.
It can be seen from the above technical proposal that the embodiments of the invention provide a kind of memory device, tungsten forming core layer and its system
Preparation Method, wherein, the preparation method of the tungsten forming core layer is before tungsten forming core layer is prepared using chemical vapor depsotition equipment, first
Obtain the thicknesses of layers curve of the chemical vapor depsotition equipment, for chemical vapor depsotition equipment carry out pretreatment provide according to
According to the chemical vapor depsotition equipment after then being initialized according to the thicknesses of layers curve to cavity pre-processes, so that described
Chemical vapor depsotition equipment is in the stable work area of the thicknesses of layers curve, finally utilizes pretreated chemical vapor deposition
Product equipment prepares tungsten forming core layer.Inventor, which studies, finds there is one in the thicknesses of layers curve of each chemical vapor depsotition equipment
The longer stable work area of section, in the stable work area, tungsten forming core thickness degree prepared by chemical vapor depsotition equipment no longer with
The number for preparing for tungsten forming core layer varies widely, that is to say, that in the stable work area, chemical vapor depsotition equipment system
Standby tungsten forming core thickness degree tends towards stability.Therefore when preparing tungsten forming core layer using pretreated chemical vapor depsotition equipment,
The homogeneous purpose of the tungsten forming core thickness degree of preparation can be realized, simplifies the selection of the preparation technology parameter of follow-up tungsten body layer,
The quality of the tungsten body layer prepared on tungsten forming core layer is ensure that, so as to improve what is prepared based on above-mentioned tungsten forming core layer and tungsten body layer
The electric property of memory device.
Brief description of the drawings
In order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
There is the required accompanying drawing used in technology description to be briefly described, it should be apparent that, drawings in the following description are only this
The embodiment of invention, for those of ordinary skill in the art, on the premise of not paying creative work, can also basis
The accompanying drawing of offer obtains other accompanying drawings.
Fig. 1 and Fig. 2 is to use the pulse nucleation mode system based on silane using chemical vapor deposition equipment in the prior art
The structural representation of standby tungsten forming core layer；
Fig. 3 is a kind of schematic flow sheet of the preparation method for tungsten forming core layer that one embodiment of the application provides；
Fig. 4 is a kind of signal of the thicknesses of layers curve for chemical vapor depsotition equipment that one embodiment of the application provides
Figure；
Fig. 5 is a kind of schematic flow sheet of the preparation method for tungsten forming core layer that another embodiment of the application provides；
Fig. 6 is a kind of schematic flow sheet of the preparation method for tungsten forming core layer that another embodiment of the application provides；
Fig. 7 is a kind of schematic flow sheet of the preparation method for tungsten forming core layer that the further embodiment of the application provides；
Fig. 8 is a kind of schematic flow sheet of the preparation method for tungsten forming core layer that the preferred embodiment of the application provides；
Fig. 9 is a kind of flow signal of the preparation method for tungsten forming core layer that another preferred embodiment of the application provides
Figure.
Embodiment
As described in background, the mistake of tungsten forming core layer is prepared using the pulse nucleation mode based on silane in the prior art
Cheng Zhong, the thickness of tungsten forming core layer can change as chemical vapor depsotition equipment prepares number, so as to result in wafer
On tungsten forming core layer thickness difference it is larger, add difficulty for the selection of preparation technology parameter of follow-up tungsten body layer, easily
Appearance formed inside the tungsten body layer on tungsten forming core layer occur cavity, or even can not on tungsten forming core layer deposits tungsten body layer situation
Occur.
More specifically, with reference to figure 1 and Fig. 2, in fig. 1 and 2, label 10 represents wafer, and label 20 represents tungsten forming core
Layer, label 30 represent tungsten nitride barrier, and label 40 represents oxide structure；Inventor, which studies, to be found, utilizes chemical vapor deposition
When product equipment is carried out continuously the preparation of tungsten forming core layer, negative offset can occur for the thickness of tungsten forming core layer；That is, utilize chemical gas
When phase depositing device carries out the preparation of tungsten forming core layer, tungsten forming core thickness degree that the thickness of tungsten forming core layer can be as shown in Figure 1 is to Fig. 2 institutes
The tungsten forming core layer thickness variation shown；Assuming that in follow-up tungsten body layer preparation process, by preparation parameter with the tungsten forming core shown in Fig. 1
Be configured based on thickness degree, then when using based on silane pulse nucleation mode prepare tungsten forming core layer thickness with
When tungsten forming core thickness degree difference shown in Fig. 1 is smaller, tungsten body layer can be preferably formed；But with chemical vapor depsotition equipment
The increase for preparing number of tungsten forming core layer is carried out, the thickness of its tungsten forming core layer formed can be gradually to the tungsten forming core layer shown in Fig. 2
Thickness is close, finally stablizes near the tungsten forming core thickness degree shown in Fig. 2, this may result in the tungsten forming core layer shown in Fig. 2
Based on carry out tungsten body layer interior void just easily occur during the preparation of tungsten body layer, or even be difficult on the tungsten forming core layer of the thickness
Tungsten body layer is formed, so as to which the electric property of the memory device to ultimately forming has undesirable effect.
Likewise, assume in follow-up tungsten body layer preparation process, by preparation parameter with the tungsten forming core thickness degree shown in Fig. 2
Based on be configured, then when thickness and Fig. 1 institutes of the tungsten forming core layer prepared using the pulse nucleation mode based on silane
When the tungsten forming core thickness degree difference shown is smaller, just easily cause occur cavity inside follow-up tungsten body layer, or even be difficult in the thickness
Tungsten body layer is formed on the tungsten forming core layer of degree.
In view of this, the embodiment of the present application provides a kind of preparation method of tungsten forming core layer, applied to chemical vapor deposition
Equipment；The preparation method of the tungsten forming core layer includes：
The thicknesses of layers curve of the chemical vapor depsotition equipment is obtained, record has describedization in the thicknesses of layers curve
Learn the corresponding relation of the film number and tungsten forming core thickness degree that are prepared after the initialization of vapor deposition apparatus cavity；
Chemical vapor depsotition equipment after being initialized according to the thicknesses of layers curve to cavity pre-processes, so that institute
State the stable work area that chemical vapor depsotition equipment is in the thicknesses of layers curve；
Tungsten forming core layer is prepared using pretreated chemical vapor depsotition equipment.
It can be seen from the above technical proposal that the preparation method of the tungsten forming core layer is in the chemical vapor depsotition equipment system of utilization
Before standby tungsten forming core layer, the thicknesses of layers curve of the chemical vapor depsotition equipment is obtained first, to be set to chemical vapor deposition
Standby to carry out pretreatment offer foundation, the chemical vapor depsotition equipment after then being initialized according to the thicknesses of layers curve to cavity enters
Row pretreatment, so that the chemical vapor depsotition equipment is in the stable work area of the thicknesses of layers curve, finally using pre-
Chemical vapor depsotition equipment after processing prepares tungsten forming core layer.Inventor, which studies, to be found, the film of each chemical vapor depsotition equipment
There is one section of longer stable work area in layer thickness curve, in the stable work area, prepared by chemical vapor depsotition equipment
Tungsten forming core thickness degree is no longer as the number for preparing of tungsten forming core layer varies widely, that is to say, that in the stable work area,
Tungsten forming core thickness degree prepared by chemical vapor depsotition equipment tends towards stability.Therefore set using pretreated chemical vapor deposition
When preparing standby tungsten forming core layer, it is possible to achieve the homogeneous purpose of the tungsten forming core thickness degree of preparation, simplify the system of follow-up tungsten body layer
The selection of standby technological parameter, ensure that the quality of the tungsten body layer prepared on tungsten forming core layer, above-mentioned tungsten shape is based on so as to improve
The electric property of memory device prepared by stratum nucleare and tungsten body layer.
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Site preparation describes, it is clear that described embodiment is only part of the embodiment of the present invention, rather than whole embodiments.It is based on
Embodiment in the present invention, those of ordinary skill in the art are obtained every other under the premise of creative work is not made
Embodiment, belong to the scope of protection of the invention.
The embodiment of the present application provides a kind of preparation method of tungsten forming core layer, as shown in figure 3, being applied to chemical vapor deposition
Equipment；The preparation method of the tungsten forming core layer includes：
S101：The thicknesses of layers curve of the chemical vapor depsotition equipment is obtained, being recorded in the thicknesses of layers curve has
The corresponding relation of the film number and tungsten forming core thickness degree that are prepared after the chemical vapor depsotition equipment cavity initialization；
S102：Chemical vapor depsotition equipment after being initialized according to the thicknesses of layers curve to cavity pre-processes,
So that the chemical vapor depsotition equipment is in the stable work area of the thicknesses of layers curve；
S103：Tungsten forming core layer is prepared using pretreated chemical vapor depsotition equipment.
The thicknesses of layers curve of the chemical vapor depsotition equipment is as shown in figure 4, in Fig. 4, abscissa is to utilize chemistry
Vapor deposition apparatus prepares the number (or wafer number) of tungsten forming core layer；For curve L1, ordinate is thickness, for
For curve L2, ordinate is square resistance.
Inventor obtain the process of the thicknesses of layers curve of the chemical vapor depsotition equipment as shown in figure 5, including：
S1011：Chemical vapor depsotition equipment after being initialized using cavity carries out the preparation of multiple tungsten forming core layer, and records
The thickness of the tungsten forming core layer prepared every time and the corresponding relation for preparing number；
S1012：Using the thickness of the tungsten forming core layer prepared every time the film layer thickness is drawn with preparing the corresponding relation of number
Write music line.
Specifically, the chemical vapor depsotition equipment after inventor initializes by using one to cavity is continuously more
Individual crystal column surface prepares tungsten forming core layer, records the sequencing of tungsten forming core layer prepared by each crystal column surface, measures simultaneously record-keeping system
The thickness of the standby tungsten forming core layer in each crystal column surface, with pair for obtaining the thickness of the tungsten forming core layer prepared every time and preparing number
It should be related to；
Then using obtained data, the number of tungsten forming core layer is prepared as transverse axis using chemical vapor depsotition equipment, with horizontal stroke
Tungsten forming core thickness degree corresponding to axle is the preparation that longitudinal axis data carry out thicknesses of layers curve；
The thicknesses of layers curve finally obtained is as shown in the L1 curves in Fig. 4.
And inventor is studied the formation basic theory of the thicknesses of layers curve：In the pulse nucleation based on silane
During mode prepares tungsten forming core layer, as shown in fig. 6, described prepare tungsten shape using pretreated chemical vapor depsotition equipment
Stratum nucleare includes：
S1031：Silane and tungsten hexafluoride are alternately passed through by the gas device of the chemical vapor depsotition equipment, with crystalline substance
Circular surfaces form the tungsten forming core layer.
Specifically, silane and tungsten hexafluoride are alternately passed through by the gas device of the chemical vapor depsotition equipment, with
Forming the tungsten forming core layer detailed process in crystal column surface includes：Pass through the gas device of the chemical vapor depsotition equipment first
(showerhead) silane gas, silane and the aluminum fluoride (AlF in gas device are passed through3) generation tungsten is reacted on a preset condition based
Forming core layer intermediate product (SiH4+AlF3→SiH4-xFx)；Silane gas is then discharged out, is passed through tungsten hexafluoride (WF6) gas, part
Tungsten forming core layer intermediate product is brought to crystal column surface with being passed through for tungsten hexafluoride, this part tungsten forming core layer intermediate product and hexafluoro
Change tungsten reaction generation tungsten forming core layer (SiH4-xFx+WF6→ W), in the tungsten forming core layer intermediate product of the gas device surface attachment
During reaching saturation, tungsten forming core layer can be gradually thinning in the thickness of crystal column surface, and the thickness of tungsten forming core layer gradually increases, with
Curve L1 and L2 shown in Fig. 4 are consistent.
, now can be at the beginning of by carrying out cavity to chemical vapor depsotition equipment when above-mentioned course of reaction reaches saturation state
Beginningization processing, to remove the tungsten forming core layer intermediate product on the gas device surface of chemical vapor depsotition equipment so that aluminum fluoride
(AlF3) be exposed again.
It is can be seen that from the curve L1 in Fig. 4 as chemical vapor depsotition equipment prepares the continuous of the number of tungsten forming core layer
Increase, the thickness of tungsten forming core layer are gradually tended towards stability, and the region that this tungsten forming core thickness degree tends towards stability is called film layer by we
The stable work area of thickness curve；When chemical vapor depsotition equipment works in the stable work area, its tungsten forming core layer prepared
Thickness reach unanimity substantially.Therefore, the chemical gaseous phase after we can initialize according to the thicknesses of layers curve to cavity
Depositing device is pre-processed, to be at the stable work area, so as to be prepared using the chemical vapor depsotition equipment
The homogeneous tungsten forming core layer of thickness.
Specifically, it is described that the chemical vapor deposition after cavity initialization is set according to the thicknesses of layers curve with reference to figure 7
It is standby to be pre-processed, so that the stable work area that the chemical vapor depsotition equipment is in the thicknesses of layers curve includes：
S1021：According to the unstable work section length of the thicknesses of layers curve, preset times are determined；
S1022：It is prepared by the tungsten forming core layer that the chemical vapor depsotition equipment after being initialized using cavity carries out preset times, with
The chemical vapor depsotition equipment is set to be in the stable work area of the thicknesses of layers curve.
As can be seen that the unstable workspace of the thicknesses of layers curve refers to be located at curve L1 front ends from Fig. 4 L1
Region, the segment length is between 25-35；Therefore, the span of the preset times can think 25-35, including end points
Value, such as can be：25th, 27,30,32,35 etc..The application is not limited this, specifically depending on actual conditions.
In the specific embodiment of the application, with reference to figure 8, it is described initialized using cavity after chemical vapor deposition
The tungsten forming core layer preparation that equipment carries out preset times includes：
S10221：Chemical vapor depsotition equipment after being initialized using cavity, in the warming-up crystal column surface point of predetermined number
Tungsten forming core layer is not prepared, and the predetermined number is equal to the preset times；
Or
Chemical vapor depsotition equipment after being initialized using cavity, repeat the preparation of tungsten forming core layer under the conditions of without wafer
Technique preset times.
Carried out it should be noted that present embodiments providing two kinds using the chemical vapor depsotition equipment after cavity initialization
Method prepared by the tungsten forming core layer of preset times：
Can be prepared by the tungsten forming core layer that preset times are carried out using the warming-up wafer of predetermined number, so that the chemical gas
The tungsten forming core layer that phase depositing device is prepared in unstable workspace is both formed in the warming-up crystal column surface of predetermined number, so that institute
State chemical vapor depsotition equipment and work in stable work area.
It by the number of repetition for setting the first wafer condition of chemical vapor depsotition equipment is pre- that can also be
If number so that chemical vapor depsotition equipment repeats tungsten forming core layer preparation technology preset times under the conditions of without wafer, from
And the chemical vapor depsotition equipment is set to work in stable work area.
It is prepared by the tungsten forming core layer that the application carries out preset times to the chemical vapor depsotition equipment after being initialized using cavity
Concrete mode do not limit, specifically depending on actual conditions.
On the basis of above-described embodiment, in the preferred embodiment of the application, as shown in figure 9, described using pre-
Chemical vapor depsotition equipment after processing also includes after preparing tungsten forming core layer：
S104：When W film gross thickness prepared by pretreated chemical vapor depsotition equipment is more than or equal to preset value
When, the chemical vapor depsotition equipment carries out cavity initialization process, and the chemical vapor deposition after the initialization of Returning utilization cavity
Prepared by the tungsten forming core layer that product equipment carries out preset times, so that the chemical vapor depsotition equipment is in the thicknesses of layers curve
Stable work area the step of.
It should be noted that when W film gross thickness prepared by pretreated chemical vapor depsotition equipment is more than or equal to
During preset value, that is, when the W film thickness of the chamber vivo devices surface attachment of equipment reaches certain value, these ground are attached to
The certain thickness W film of side can be by influenceing chemical vapor depsotition equipment the parameter such as radiating and reaction rate, so as to influence
The service behaviour of chemical vapor depsotition equipment.Therefore in the W film total thickness prepared when pretreated chemical vapor depsotition equipment
When degree is more than or equal to preset value, the chemical vapor depsotition equipment carries out cavity initialization process automatically, is attached to removing
The tungsten forming core layer intermediate product and W film on chamber vivo devices surface, ensure the normal working performance of chemical vapor depsotition equipment.
The specific value of the preset value different, the application couple according to the parameter difference of chemical vapor depsotition equipment
Its specific value does not limit, specifically depending on actual conditions.
It also should be noted that W film gross thickness prepared by pretreated chemical vapor depsotition equipment is not only wrapped
The thickness of the tungsten forming core layer of preparation is included, includes the thickness of the W film such as tungsten body layer subsequently prepared.
But after cavity initialization process is carried out to chemical vapor depsotition equipment, the chemical vapor depsotition equipment again can work
Make in the unstable workspace shown in Fig. 4 curve L1, it is therefore desirable to return initial to cavity according to the thicknesses of layers curve
The step of chemical vapor depsotition equipment after change is pre-processed, to the chemical vapor depsotition equipment re-start pre-process so that
It works in stable work area.
On the basis of above-described embodiment, another embodiment of the application provides one kind to the chemical vapor deposition
Equipment carries out the detailed process of cavity initialization process, including：
The cavity of the chemical vapor depsotition equipment is cleaned using chemical reaction process or gas purging process, with
Remove the cavity inner wall of the chemical vapor depsotition equipment and the tungsten forming core layer intermediate product of gas output device surface attachment.
Wherein, cavity is cleaned using chemical reaction process (dry clean), refer to can among tungsten forming core layer
The gas of product reaction is poured in cavity, so that the gas and the tungsten forming core layer intermediate product being attached on inwall and gas device
And W film is reacted, so as to reach the purpose for removing these tungsten forming core layer intermediate products and W film；
Cavity is cleaned using gas purging process, refers to enter cavity inner wall and gas device using inert gas
Row purging, to realize the purpose for removing the tungsten forming core layer intermediate product being attached on inwall and gas device.
Accordingly, the embodiment of the present application additionally provides a kind of tungsten forming core layer, and the tungsten forming core layer is by any of the above-described embodiment
The preparation method of described tungsten forming core layer prepares.
Accordingly, the embodiment of the present application additionally provides a kind of memory device, including the tungsten forming core as described in above-mentioned embodiment
Layer.
Optionally, the memory device can be dynamic random access memory (Dynamic RandomAccess
Memory, DRAM), it can also be three dimensional NAND flash memory (3D NAND flash) device.
In summary, the embodiment of the present application provides a kind of memory device, tungsten forming core layer and preparation method thereof, wherein, institute
The preparation method of tungsten forming core layer is stated before tungsten forming core layer is prepared using chemical vapor depsotition equipment, obtains the chemical gas first
The thicknesses of layers curve of phase depositing device, foundation is provided to carry out pretreatment to chemical vapor depsotition equipment, then according to the film
Chemical vapor depsotition equipment after layer thickness curve initializes to cavity pre-processes, so that the chemical vapor depsotition equipment
In the stable work area of the thicknesses of layers curve, finally tungsten forming core is prepared using pretreated chemical vapor depsotition equipment
Layer.Inventor, which studies, finds there is one section of longer steady operation in the thicknesses of layers curve of each chemical vapor depsotition equipment
Area, in the stable work area, tungsten forming core thickness degree prepared by chemical vapor depsotition equipment is no longer with the preparation of tungsten forming core layer
Number varies widely, that is to say, that in the stable work area, the tungsten forming core thickness degree of chemical vapor depsotition equipment preparation
Tend towards stability.Therefore when preparing tungsten forming core layer using pretreated chemical vapor depsotition equipment, it is possible to achieve the tungsten of preparation
The homogeneous purpose of forming core thickness degree, the selection of the preparation technology parameter of follow-up tungsten body layer is simplified, ensure that in tungsten forming core layer
The quality of the tungsten body layer of upper preparation, so as to improve the electrical property of the memory device based on above-mentioned tungsten forming core layer and the preparation of tungsten body layer
Energy.
Each embodiment is described by the way of progressive in this specification, what each embodiment stressed be and other
The difference of embodiment, between each embodiment identical similar portion mutually referring to.
The foregoing description of the disclosed embodiments, professional and technical personnel in the field are enable to realize or using the present invention.
A variety of modifications to these embodiments will be apparent for those skilled in the art, as defined herein
General Principle can be realized in other embodiments without departing from the spirit or scope of the present invention.Therefore, it is of the invention
The embodiments shown herein is not intended to be limited to, and is to fit to and principles disclosed herein and features of novelty phase one
The most wide scope caused.
Claims (9)
1. a kind of preparation method of tungsten forming core layer, it is characterised in that applied to chemical vapor depsotition equipment；The tungsten forming core layer
Preparation method includes：
The thicknesses of layers curve of the chemical vapor depsotition equipment is obtained, record has the chemical gas in the thicknesses of layers curve
The corresponding relation of the film number and tungsten forming core thickness degree that are prepared after the initialization of phase depositing device cavity；
Chemical vapor depsotition equipment after being initialized according to the thicknesses of layers curve to cavity pre-processes, so that describedization
Learn the stable work area that vapor deposition apparatus is in the thicknesses of layers curve；
Tungsten forming core layer is prepared using pretreated chemical vapor depsotition equipment.
2. according to the method for claim 1, it is characterised in that the film layer for obtaining the chemical vapor depsotition equipment is thick
Line of writing music includes：
Chemical vapor depsotition equipment after being initialized using cavity carries out the preparation of multiple tungsten forming core layer, and records what is prepared every time
The thickness of tungsten forming core layer and the corresponding relation for preparing number；
Using the thickness of the tungsten forming core layer prepared every time the thicknesses of layers curve is drawn with preparing the corresponding relation of number.
3. according to the method for claim 1, it is characterised in that described that cavity is initialized according to the thicknesses of layers curve
Chemical vapor depsotition equipment afterwards is pre-processed, so that the chemical vapor depsotition equipment is in the thicknesses of layers curve
Stable work area includes：
According to the unstable work section length of the thicknesses of layers curve, preset times are determined；
Prepared by the tungsten forming core layer that the chemical vapor depsotition equipment after being initialized using cavity carries out preset times, so that the chemistry
Vapor deposition apparatus is in the stable work area of the thicknesses of layers curve.
4. according to the method for claim 3, it is characterised in that it is described initialized using cavity after chemical vapor deposition set
Prepared by the standby tungsten forming core layer for carrying out preset times include：
Chemical vapor depsotition equipment after being initialized using cavity, tungsten forming core is prepared respectively in the warming-up crystal column surface of predetermined number
Layer, the predetermined number are equal to the preset times；
Or
Chemical vapor depsotition equipment after being initialized using cavity, repeat tungsten forming core layer preparation technology under the conditions of without wafer
Preset times.
5. according to the method for claim 3, it is characterised in that described to utilize pretreated chemical vapor depsotition equipment system
Also include after standby tungsten forming core layer：
When W film gross thickness prepared by pretreated chemical vapor depsotition equipment is more than or equal to preset value, the chemistry
Vapor deposition apparatus carries out cavity initialization process, and the chemical vapor depsotition equipment after the initialization of Returning utilization cavity is carried out in advance
If prepared by the tungsten forming core layer of number, so that the chemical vapor depsotition equipment is in the stable work area of the thicknesses of layers curve
The step of.
6. according to the method for claim 5, it is characterised in that at the beginning of the progress cavity to the chemical vapor depsotition equipment
Beginningization processing includes：
The cavity of the chemical vapor depsotition equipment is cleaned using chemical reaction process or gas purging process, to remove
The cavity inner wall of the chemical vapor depsotition equipment and the tungsten forming core layer intermediate product of gas output device surface attachment.
7. according to the method for claim 1, it is characterised in that described to utilize pretreated chemical vapor depsotition equipment system
Standby tungsten forming core layer includes：
Silane and tungsten hexafluoride are alternately passed through by the gas device of the chemical vapor depsotition equipment, to be formed in crystal column surface
The tungsten forming core layer.
8. a kind of tungsten forming core layer, it is characterised in that prepared as the preparation method of the tungsten forming core layer described in claim any one of 1-7
Obtain.
9. a kind of memory device, it is characterised in that including tungsten forming core layer as claimed in claim 8.
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