CN107527657A - High pressure slope feedback control circuit and method for EEPROM - Google Patents
High pressure slope feedback control circuit and method for EEPROM Download PDFInfo
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- CN107527657A CN107527657A CN201610444342.1A CN201610444342A CN107527657A CN 107527657 A CN107527657 A CN 107527657A CN 201610444342 A CN201610444342 A CN 201610444342A CN 107527657 A CN107527657 A CN 107527657A
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- voltage
- pump circuit
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- high pressure
- pressure slope
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/30—Power supply circuits
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Abstract
The present invention provides a kind of high pressure slope feedback control circuit and method for EEPROM.The high pressure slope feedback control circuit includes：Voltage sample module, for carrying out the dynamic sampling of voltage based on dynamic benchmark voltage and pump circuit output voltage；Voltage is to current conversion module, for being sample rate current by the voltage conversion sampled；Current comparing module, for the sample rate current to be compared with reference current；And pump circuit control module, the comparative result for being exported based on the current comparing module control the open and-shut mode of the pump circuit.High pressure slope feedback control circuit and method provided by the present invention for EEPROM makes it possible to the slope of the slop control pump circuit output voltage using dynamic benchmark voltage by feedback control, pump circuit output current is completely used for late-class circuit work in addition to sample rate current simultaneously, therefore can save power consumption.
Description
Technical field
The present invention relates to technical field of integrated circuits, is used for Erarable Programmable Read only Memory in particular to one kind
(EEPROM) high pressure slope feedback control circuit and method.
Background technology
It is reliable for its as medical electronics, financial system and automotive electronics are more and more to the EEPROM market demand
The requirement of property also more and more higher.Especially on the premise of future capacity is increasing, how to possess good reliability and data
Hold capacity is a very important problem.Wherein, endurance (endurance) is for assessing EEPROM cell performance
Important parameter.
Endurance characteristic finds expression in the threshold voltage window of memory, and it has close relationship with programming number.EEPROM
It can be programmed and erased until oxide layer is destroyed.Maximum programming (erasable) number that one memory can be subjected to is referred to as
Endurance.Industry always strives to improve EEPROM endurance by the optimization of technique or design, and improves EEPROM's
Endurance is generally realized by the slope for the erasable voltage (VPP) for controlling EEPROM.However, existing control VPP slopes
Method and circuit power consumption are larger.
The content of the invention
In view of the shortcomings of the prior art, the present invention provides a kind of high pressure slope feedback control circuit for EEPROM, institute
Stating high pressure slope feedback control circuit includes：Voltage sample module, for based on dynamic benchmark voltage and pump circuit output voltage
Carry out the dynamic sampling of voltage；Voltage is to current conversion module, for being sample rate current by the voltage conversion sampled；Electric current ratio
Compared with module, for the sample rate current to be compared with reference current；And pump circuit control module, for based on the electric current
The comparative result that comparison module is exported controls the open and-shut mode of the pump circuit.
In one embodiment of the invention, when the sample rate current is more than the reference current, the pump circuit control
Molding block controls the pump circuit to close.
In one embodiment of the invention, the pump circuit control module is pump circuit clock control module.
In one embodiment of the invention, the pump circuit clock control module includes logic element, the logic basis
The input of part includes the signal of pump circuit clock signal, pump circuit enable signal and the comparative result.
In one embodiment of the invention, the voltage sample module includes electric capacity and multiple sectional pressure elements.
In one embodiment of the invention, the dynamic benchmark voltage is filled based on the sample rate current to the electric capacity
Electricity.
On the other hand, the present invention also provides a kind of high pressure slope feedback for EEPROM, and the high pressure is oblique
Rate feedback includes：The dynamic sampling of voltage is carried out based on dynamic benchmark voltage and pump circuit output voltage；It will be adopted
The voltage conversion of sample is sample rate current；The sample rate current is compared with reference current；And based on the sample rate current with
The comparative result of the reference current controls the open and-shut mode of the pump circuit.
In one embodiment of the invention, the control includes：When the sample rate current is more than the reference current,
The pump circuit is controlled to close.
In one embodiment of the invention, the control to pump circuit includes entering row clock control to the pump circuit
System.
In one embodiment of the invention, the dynamic benchmark voltage is based on the sample rate current and carries out self-charging.
High pressure slope feedback control circuit and method provided by the present invention for EEPROM passes through feedback control
The slope of the slop control pump circuit output voltage of dynamic benchmark voltage can be utilized, while pump circuit output current is except sampling electricity
Late-class circuit work is completely used for outside stream, therefore power consumption can be saved.
Brief description of the drawings
The drawings below of the present invention is used to understand the present invention in this as the part of the present invention.Shown in the drawings of this hair
Bright embodiment and its description, for explaining the principle of the present invention.
In accompanying drawing：
Fig. 1 shows the exemplary knot of the high pressure slope feedback control circuit for EEPROM according to embodiments of the present invention
Structure schematic diagram；
Fig. 2 shows the illustrative diagram of the more specific circuit structure of circuit shown in Fig. 1 according to embodiments of the present invention；
Fig. 3 shows the exemplary waveform diagrams that each voltage changes over time in the course of the work of circuit shown in Fig. 2；And
Fig. 4 shows the exemplary stream of the high pressure slope feedback for EEPROM according to embodiments of the present invention
Cheng Tu.
Embodiment
In the following description, a large amount of concrete details are given to provide more thorough understanding of the invention.So
And it is obvious to the skilled person that the present invention can be able to without one or more of these details
Implement.In other examples, in order to avoid obscuring with the present invention, do not enter for some technical characteristics well known in the art
Row description.
It should be appreciated that the present invention can be implemented in different forms, and it should not be construed as being limited to what is proposed here
Embodiment.On the contrary, providing these embodiments disclosure will be made thoroughly and complete, and will fully convey the scope of the invention to
Those skilled in the art.
The purpose of term as used herein is only that description specific embodiment and not as the limitation of the present invention.Make herein
Used time, " one " of singulative, "one" and " described/should " be also intended to include plural form, unless context is expressly noted that separately
Outer mode.It is also to be understood that term " composition " and/or " comprising ", when in this specification in use, determining the feature, whole
Number, step, operation, the presence of element and/or part, but be not excluded for one or more other features, integer, step, operation,
The presence or addition of element, part and/or group.Herein in use, term "and/or" includes any and institute of related Listed Items
There is combination.
In order to thoroughly understand the present invention, detailed step and detailed structure will be proposed in following description, so as to
Explain technical scheme proposed by the present invention.Presently preferred embodiments of the present invention is described in detail as follows, but except these detailed descriptions
Outside, the present invention can also have other embodiment.
EEPROM erasable number is limited mainly due to when high energy carriers during erasable pass through gate oxide
Wait, the molecule in a part of carrier and oxide layer is collided and produces defect.If pass through the carrier energy of gate oxide
Amount is lower, then damages smaller, therefore can improve erasable number.
Controlling the slope (RAMP) of EEPROM erasable voltage (VPP) can make among the process of high pressure (HV) raising,
The voltage on floating boom is gradually stepped up, their relative pressure is kept a less value, the relative of field strength is passed through so as to reduce
Magnitude of voltage.
In order to control VPP slope, existing method and circuit are generally by by the partial pressure and reference voltage of vpp voltage
(Vref) it is compared, the switch of control pump circuit (PUMP), reaches the step of controlling PUMP, be equivalent to RAMP controls.However,
Such method and circuit need larger resistance to carry out partial pressure, it is necessary to take PUMP output power consumptions.
In addition, in order to control VPP slope, also there are method and circuit to increase a current source in output end, electric current is equal to
When PUMP drives, output VPP controls are in this electrical voltage point.By controlling output current, vpp voltage can be accurately controlled.With when
Between increase, current source is reduced, control VPP RAMP effect can be reached.However, in such a circuit, PUMP is always
All it is to open with all strength, power consumption consumption is larger.In addition, technique is easily damaged to high tension apparatus after 0.13um, voltage source is direct
Access easy damaged high tension apparatus on VPP.
For the deficiency of the above method and circuit, the invention provides a kind of high pressure slope feedback control for EEPROM
Circuit, it makes it possible to the slope of the slop control pump circuit output voltage using dynamic benchmark voltage by feedback control, together
When pump circuit output current late-class circuit work is completely used in addition to sample rate current, therefore power consumption can be saved.Referring to
Specific embodiment description is according to the high pressure slope feedback control circuit for EEPROM of the invention.
Fig. 1 shows the example of the high pressure slope feedback control circuit 100 for EEPROM according to embodiments of the present invention
Property structural representation.As shown in figure 1, the high pressure slope feedback control circuit 100 for EEPROM includes voltage sample module
101st, voltage is to current conversion module 102, current comparing module 103 and pump circuit control module 104.
Wherein, voltage sample module 101 is used for the output voltage based on some dynamic benchmark voltage and pump circuit PUMP
VPUMP carries out the dynamic sampling of voltage, to produce sampled voltage Vsamp.Voltage is used for current conversion module 102 will sampling electricity
Pressure Vsamp is converted to sample rate current Isamp.Current comparing module 103 is used for sample rate current Isamp and reference current Iref phases
Compare.The comparative result that pump circuit control module 104 is used to be exported based on current comparing module 103 controls the pump circuit
PUMP open and-shut mode.
According to an embodiment of the invention, when sample rate current Isamp is more than reference current Iref, pump circuit control module
104 control pump circuit PUMP are closed；Conversely, pump circuit PUMP normal operations.It can reach control to PUMP by changing electric current
System.Exemplarily, pump circuit PUMP can be Dixon (Dickson) charge pump circuit.
According to an embodiment of the invention, pump circuit control module 104 is pump circuit clock control module.In other words, pump electricity
Road control module 104 is controlled by controlling pump circuit PUMP clock signal to pump circuit PUMP.Exemplarily, the pump
Circuit clock control module can include logic element, and the input of the logic element can include pump circuit clock signal
The signal of comparative result between PUMPCLK, pump circuit enable signal PUMPEN and sample rate current and reference current.
Voltage sample module 101 can include electric capacity and multiple sectional pressure elements, and dynamic benchmark voltage can be based on sampling electricity
Flow the charging to the electric capacity, that is to say, that dynamic benchmark voltage is self-charging dynamic benchmark voltage.Because voltage signal is dynamic
Sampling, therefore sampled voltage is changed over time and changed, the rate of climb of change VPUMP over time should be less than sampling
The rate of climb of reference voltage.Circuit can be reached PUMP when VPUMP is less than certain value by feedback control and be opened with all strength；Work as VPUMP
Reach can with erasable voltage, while VPUMP rises slack-off, by then passing through control PUMP clock signals, can arrange unless there are
Imitate power consumption.
Fig. 2 shows the exemplary signal of the more specific circuit structure 200 of circuit shown in Fig. 1 according to embodiments of the present invention
Figure.
As shown in Fig. 2 the high pressure slope feedback control circuit 200 for EEPROM includes voltage sample module 201, voltage
To current conversion module 202, current comparing module 203 and pump circuit control module 204.
Wherein, voltage sample module 201 is used for the output voltage based on some dynamic benchmark voltage VRC and pump circuit PUMP
VPUMP carries out the dynamic sampling of voltage, to produce sampled voltage Vsamp.Voltage sample module 201 includes electric capacity Csamp, multiple
Sectional pressure element and diode.Although being shown in Figure 2 for including ten sectional pressure elements, those of ordinary skill in the art can
To understand, any number of sectional pressure element can be set according to demand.
As shown in Fig. 2 voltage sample module 201 passes through dynamic benchmark voltage VRC and pump circuit PUMP output voltage
VPUMP ten grades of partial pressures obtain Vsamp, and Vsamp can be calculated by following formula：
Voltage is used to the voltage Vsamp sampled being converted to sample rate current Isamp to current conversion module 202.Voltage
Isamp electric currents are obtained according to the size of Vsamp voltages to current conversion module 202, Isamp can be calculated by following formula：
Isamp=1/2 μ CoxW/L(VPUMP-Vsamp-Vthp)2
Wherein, μ is the ditch that the mobility, W and L of sectional pressure element (such as PMOS) channel surface electronics are respectively PMOS
Road width and length, COXFor the electric capacity of gate oxide unit area, Vthp is the cut-in voltage (threshold voltage) of PMOS.
Current comparing module 203 is used to compare sample rate current Isamp with reference current Iref.Current comparing module
203 by mirror current source and current comparator by Isamp electric currents compared with reference current Iref.
The comparative result SAM_EN that pump circuit control module 204 is used to be exported based on current comparing module 203 controls institute
State pump circuit PUMP open and-shut mode.In one example, when Isamp current value is more than Iref current value, PUMP is closed
Close, it is on the contrary then open.
VRC sampled reference magnitudes of voltage are that electric capacity Csamp is charged by equivalent Isamp electric currents, and its value can pass through
Following formula represents：
Wherein, t represents the time.
Obtained according to the VRC rate of rise equal to tramp：
Wherein, VPP is EEPROM erasable voltage.
The course of work of whole circuit can be as shown in Figure 3：
Opened in step 1, initial VPUMP=0, transistor M1, PUMP is in off position.
Opened in step 2, pump circuit enable signal PUMPEN, the normal output currents of PUMP, M1 is closed.Due to VPUMP electricity
Press through low, voltage sample module 201 is unable to normal stream overcurrent, and Csamp does not have accumulated voltage, VPUMP-Vsamp<Vth (its
In, Vth is the cut-in voltage of transistor), so without sample rate current, PUMP works with all strength.
In step 3, work as VPUMP>Isamp electric currents are produced during 10Vthp, and now Csamp can normally be filled by metal-oxide-semiconductor
Electricity.Because whether PUMP opens determined by Isamp, and VRC determines Vsamp and then influences Isamp, so VRC slope is determined
Determine PUMP unlatching, and then influence VPUMP slope.
In step 4, when Vsamp rises to breakdown voltage (BV) value of diode shown in figure, because Vsamp is by BV
Voltage institute clamper (clamp), feedback current switches over, and VPUMP is finally clamped at VBV+VGSP magnitude of voltage, wherein VBV
For the magnitude of voltage of diode breakdown voltage, VGSP is the magnitude of voltage of the gate source voltage for the PMOS transistor being connected with diode.
According to the high pressure slope feedback control circuit for EEPROM of above-described embodiment using sample rate current to dynamic base
Quasi- voltage VRC carries out self-charging, while controls sample rate current size, and the sample rate current and additional reference current that mirror image is come out enter
Row compares, and controls PUMP opening and closing, and the VPUMP rate of rise is controlled using the dynamic benchmark voltage VRC rate of rise.
PUMP output currents are reached by feedback late-class circuit work is completely used in addition to sample rate current, it is thus possible to save power consumption.
In embodiment, when VPUMP voltages are less than 10*Vthp, voltage sampling circuit does not work, and PUMP is always maintained at running.VPUMP
Ceiling voltage can rise to VBV+VGS.
According to another aspect of the present invention, a kind of high pressure slope feedback for EEPROM is additionally provided.Fig. 4
Show the exemplary process diagram of the high pressure slope feedback 400 for EEPROM according to embodiments of the present invention.Such as
Shown in Fig. 4, the high pressure slope feedback 400 for EEPROM comprises the following steps：
In step S401, the dynamic sampling based on dynamic benchmark voltage and pump circuit output voltage progress voltage.In step
S402, it is sample rate current by the voltage conversion sampled.In step S403, the sample rate current is compared with reference current.
In step S404, the comparative result based on the sample rate current and the reference current controls the open and-shut mode of the pump circuit.
Wherein, the dynamic benchmark voltage can be based on the sample rate current and carry out self-charging.
According to an embodiment of the invention, the control to pump circuit includes：When the sample rate current is more than the reference current
When, control the pump circuit to close.Exemplarily, the control to pump circuit includes carrying out clock control to pump circuit.
High pressure slope feedback for EEPROM according to embodiments of the present invention can utilize dynamic benchmark electricity
The rate of rise of the rate of rise controlling pump circuit output voltage of pressure.Realize that pump circuit output current removes sample rate current by feedback
Outside be completely used for late-class circuit work, therefore power consumption can be saved.
Those of ordinary skill in the art are referred to above-mentioned oblique to the high pressure for EEPROM according to embodiments of the present invention
The description of rate feedback control circuit understands the high pressure slope feedback for EEPROM according to embodiments of the present invention
Operation in detail, here is omitted.
Although describing above-mentioned example embodiment by reference to accompanying drawing, it should be understood that above-mentioned example embodiment is only example
Property, and be not intended to limit the scope of the invention to this.Those of ordinary skill in the art can carry out various change wherein
Become and change, be made without departing from the scope of the present invention and spiritual.All such changes and modifications are intended to be included in appended right will
Ask within required the scope of the present invention.
Those of ordinary skill in the art are it is to be appreciated that the list of each example described with reference to the embodiments described herein
Member and algorithm steps, it can be realized with the combination of electronic hardware or computer software and electronic hardware.These functions are actually
Performed with hardware or software mode, application-specific and design constraint depending on technical scheme.Professional and technical personnel
Described function can be realized using distinct methods to each specific application, but this realization is it is not considered that exceed
The scope of the present invention.
In the specification that this place provides, numerous specific details are set forth.It is to be appreciated, however, that the implementation of the present invention
Example can be put into practice in the case of these no details.In some instances, known method, structure is not been shown in detail
And technology, so as not to obscure the understanding of this description.
Similarly, it will be appreciated that in order to simplify the present invention and help to understand one or more of each inventive aspect,
To the present invention exemplary embodiment description in, each feature of the invention be grouped together into sometimes single embodiment, figure,
Or in descriptions thereof.However, the method for the invention should be construed to reflect following intention：It is i.e. claimed
Application claims features more more than the feature being expressly recited in each claim.More precisely, such as corresponding power
As sharp claim reflects, its inventive point is the spy that can use all features less than some disclosed single embodiment
Levy to solve corresponding technical problem.Therefore, it then follows thus claims of embodiment are expressly incorporated in this specific
Embodiment, wherein each claim is in itself as separate embodiments of the invention.
It will be understood to those skilled in the art that in addition to mutually exclusive between feature, any combinations pair can be used
All features and so disclosed any method disclosed in this specification (including adjoint claim, summary and accompanying drawing)
Or all processes or unit of equipment are combined.Unless expressly stated otherwise, this specification (including adjoint right will
Ask, make a summary and accompanying drawing) disclosed in each feature can be replaced by the alternative features for providing identical, equivalent or similar purpose.
In addition, it will be appreciated by those of skill in the art that although some embodiments described herein include other embodiments
In included some features rather than further feature, but the combination of the feature of different embodiments means in of the invention
Within the scope of and form different embodiments.For example, in detail in the claims, embodiment claimed it is one of any
Mode it can use in any combination.
The foregoing is only a specific embodiment of the invention or the explanation to embodiment, protection of the invention
Scope is not limited thereto, any one skilled in the art the invention discloses technical scope in, can be easily
Expect change or replacement, should all be included within the scope of the present invention.Protection scope of the present invention should be with claim
Protection domain is defined.
Claims (10)
- A kind of 1. high pressure slope feedback control circuit for EEPROM, it is characterised in that the high pressure slope feedback control electricity Road includes：Voltage sample module, for carrying out the dynamic sampling of voltage based on dynamic benchmark voltage and pump circuit output voltage；Voltage is to current conversion module, for being sample rate current by the voltage conversion sampled；Current comparing module, for the sample rate current to be compared with reference current；AndPump circuit control module, the comparative result for being exported based on the current comparing module control opening for the pump circuit Closed state.
- 2. high pressure slope feedback control circuit according to claim 1, it is characterised in that when the sample rate current is more than institute When stating reference current, the pump circuit control module controls the pump circuit to close.
- 3. high pressure slope feedback control circuit according to claim 2, it is characterised in that the pump circuit control module is Pump circuit clock control module.
- 4. high pressure slope feedback control circuit according to claim 3, it is characterised in that the pump circuit clock control mould Block includes logic element, and the input of the logic element includes pump circuit clock signal, pump circuit enable signal and the ratio The signal of relatively result.
- 5. high pressure slope feedback control circuit according to claim 1, it is characterised in that the voltage sample module includes Electric capacity and multiple sectional pressure elements.
- 6. high pressure slope feedback control circuit according to claim 5, it is characterised in that the dynamic benchmark voltage is based on Charging of the sample rate current to the electric capacity.
- A kind of 7. high pressure slope feedback for EEPROM, it is characterised in that the high pressure slope feedback control side Method includes：The dynamic sampling of voltage is carried out based on dynamic benchmark voltage and pump circuit output voltage；It is sample rate current by the voltage conversion sampled；The sample rate current is compared with reference current；AndComparative result based on the sample rate current and the reference current controls the open and-shut mode of the pump circuit.
- 8. high pressure slope feedback according to claim 7, it is characterised in that the control includes：When described When sample rate current is more than the reference current, the pump circuit is controlled to close.
- 9. high pressure slope feedback according to claim 8, it is characterised in that the control bag to pump circuit Include and clock control is carried out to the pump circuit.
- 10. high pressure slope feedback according to claim 7, it is characterised in that the dynamic benchmark voltage base Self-charging is carried out in the sample rate current.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201610444342.1A CN107527657B (en) | 2016-06-20 | 2016-06-20 | High voltage slope feedback control circuit and method for EEPROM |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610444342.1A CN107527657B (en) | 2016-06-20 | 2016-06-20 | High voltage slope feedback control circuit and method for EEPROM |
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| CN107527657B CN107527657B (en) | 2021-02-05 |
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| US20060006926A1 (en) * | 2000-05-24 | 2006-01-12 | Kabushiki Kaisha Toshiba | Potential detector and semiconductor integrated circuit |
| WO2009155540A1 (en) * | 2008-06-20 | 2009-12-23 | Monolithic Power Systems, Inc. | Charge pumps with controlled ramp rate |
| CN102543186A (en) * | 2010-12-20 | 2012-07-04 | 三星电子株式会社 | Negative voltage generator, decoder, nonvolatile memory device and memory system |
| CN103514951A (en) * | 2012-06-26 | 2014-01-15 | 中芯国际集成电路制造(上海)有限公司 | Voltage stabilizing circuit and voltage stabilizing device |
-
2016
- 2016-06-20 CN CN201610444342.1A patent/CN107527657B/en active Active
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060006926A1 (en) * | 2000-05-24 | 2006-01-12 | Kabushiki Kaisha Toshiba | Potential detector and semiconductor integrated circuit |
| WO2009155540A1 (en) * | 2008-06-20 | 2009-12-23 | Monolithic Power Systems, Inc. | Charge pumps with controlled ramp rate |
| CN102543186A (en) * | 2010-12-20 | 2012-07-04 | 三星电子株式会社 | Negative voltage generator, decoder, nonvolatile memory device and memory system |
| CN103514951A (en) * | 2012-06-26 | 2014-01-15 | 中芯国际集成电路制造(上海)有限公司 | Voltage stabilizing circuit and voltage stabilizing device |
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