CN107523874A - A kind of single-crystal silicon carbide stove control pressurer system - Google Patents
A kind of single-crystal silicon carbide stove control pressurer system Download PDFInfo
- Publication number
- CN107523874A CN107523874A CN201610453225.1A CN201610453225A CN107523874A CN 107523874 A CN107523874 A CN 107523874A CN 201610453225 A CN201610453225 A CN 201610453225A CN 107523874 A CN107523874 A CN 107523874A
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- CN
- China
- Prior art keywords
- exhaust pipe
- pressure
- control
- silicon carbide
- valve
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The present invention relates to a kind of single-crystal silicon carbide stove control pressurer system, it includes reative cell, loading line is provided with the reative cell side, opposite side is provided with main exhaust pipe and pressure control conduit, charge valve and mass flow controller are provided with the loading line, the first mechanical pump and the first extraction valve are provided with the main exhaust pipe, it is provided with the main exhaust pipe and divides exhaust pipe, it is described divide molecular pump and the second extraction valve are provided with exhaust pipe, pressure sensor is provided with the pressure control conduit, pressure-control valve, PID control circuit and the second mechanical pump, described point of exhaust pipe is connected with pressure control conduit.Present invention control is accurate, operates steadily.
Description
Technical field
The present invention relates to a kind of control pressurer system, and in particular to a kind of single crystal growing furnace control pressurer system.
Background technology
In silicon carbide monocrystal growth, carrier gas typically uses argon gas, and different exhaust velocities has a great impact to growth many types of of crystal.After thermograde when it is determined that growing, it is exactly control pressure to influence the most important factor of silicon carbide monocrystal growth, but also without more stable, the accurate control pressurer system of control in current silicon carbide monocrystal growth stove.
The content of the invention
Goal of the invention：The invention aims to overcome deficiency of the prior art, there is provided one kind control is accurate, the single-crystal silicon carbide stove control pressurer system to operate steadily.
Technical scheme：In order to solve the above-mentioned technical problem, a kind of single-crystal silicon carbide stove control pressurer system of the present invention, it includes reative cell, loading line is provided with the reative cell side, opposite side is provided with main exhaust pipe and pressure control conduit, charge valve and mass flow controller are provided with the loading line, the first mechanical pump and the first extraction valve are provided with the main exhaust pipe, it is provided with the main exhaust pipe and divides exhaust pipe, it is described divide molecular pump and the second extraction valve are provided with exhaust pipe, pressure sensor is provided with the pressure control conduit, pressure-control valve, PID control circuit and the second mechanical pump, described point of exhaust pipe is connected with pressure control conduit.
Described point of exhaust pipe is located on the main exhaust pipe between the first mechanical pump and the first extraction valve.
The described point of exhaust pipe pressure control conduit anterior with pressure sensor is connected.
Beneficial effect：Compared with prior art, its remarkable advantage is the present invention：Overall structure of the present invention sets reasonable, the loading line being made up of charge valve and mass flow controller is set, and first mechanical pump, the first extraction valve, the exhaust pipe of molecular pump and the second extraction valve composition, and the pressure control conduit that pressure sensor, PID control circuit, pressure-control valve and the second mechanical pump form, ensure that control is accurate, overall operation is steadily reliable, and good pressure environment is provided for silicon carbide monocrystal growth.
Brief description of the drawings
Fig. 1 is the structural representation of the present invention.
Embodiment
The present invention is further illustrated with reference to the accompanying drawings and examples.
As shown in Figure 1, a kind of single-crystal silicon carbide stove control pressurer system of the present invention, it includes reative cell 1, loading line 2 is provided with the side of reative cell 1, opposite side is provided with main exhaust pipe 3 and pressure control conduit 4, charge valve 5 and mass flow controller 6 are provided with the loading line 2, the first mechanical pump 7 and the first extraction valve 8 are provided with the main exhaust pipe 3, it is provided with the main exhaust pipe 3 and divides exhaust pipe 9, it is described divide the extraction valve 11 of molecular pump 10 and second is provided with exhaust pipe 9, pressure sensor 12 is provided with the pressure control conduit 4, pressure-control valve 13, the mechanical pump 15 of PID control circuit 14 and second, described point of exhaust pipe 9 is connected with pressure control conduit 4；Described point of exhaust pipe 9 is located on the main exhaust pipe between the first mechanical pump 7 and the first extraction valve 8；Described point of exhaust pipe 9 pressure control conduit 4 anterior with pressure sensor 12 is connected.Overall structure of the present invention sets reasonable, the loading line being made up of charge valve and mass flow controller is set, and first mechanical pump, the first extraction valve, the exhaust pipe of molecular pump and the second extraction valve composition, and the pressure control conduit that pressure sensor, PID control circuit, pressure-control valve and the second mechanical pump form, ensure that control is accurate, overall operation is steadily reliable, and good pressure environment is provided for silicon carbide monocrystal growth.
The invention provides a kind of thinking and method; method and the approach for implementing the technical scheme are a lot; described above is only the preferred embodiment of the present invention; it should be understood that; for those skilled in the art, under the premise without departing from the principles of the invention, some improvements and modifications can also be made; these improvements and modifications also should be regarded as protection scope of the present invention, and the available prior art of each part being not known in the present embodiment is realized.
Claims (3)
- A kind of 1. single-crystal silicon carbide stove control pressurer system, it is characterised in that：It includes reative cell（1）, in the reative cell（1）Side is provided with loading line（2）, opposite side is provided with main exhaust pipe（3）And pressure control conduit（4）, in the loading line（2）It is provided with charge valve（5）And mass flow controller（6）, in the main exhaust pipe（3）It is provided with the first mechanical pump（7）With the first extraction valve（8）, in the main exhaust pipe（3）It is provided with and divides exhaust pipe（9）, divide exhaust pipe described（9）It is provided with molecular pump（10）With the second extraction valve（11）, in the pressure control conduit（4）It is provided with pressure sensor（12）, pressure-control valve（13）, PID control circuit（14）With the second mechanical pump（15）, it is described to divide exhaust pipe（9）With pressure control conduit（4）It is connected.
- 2. single-crystal silicon carbide stove control pressurer system according to claim 1, it is characterised in that：Described point of exhaust pipe（9）It is located at the first mechanical pump（7）With the first extraction valve（8）Between main exhaust pipe on.
- 3. single-crystal silicon carbide stove control pressurer system according to claim 1, it is characterised in that：Described point of exhaust pipe（9）With pressure sensor（12）Anterior pressure control conduit（4）It is connected.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610453225.1A CN107523874A (en) | 2016-06-22 | 2016-06-22 | A kind of single-crystal silicon carbide stove control pressurer system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610453225.1A CN107523874A (en) | 2016-06-22 | 2016-06-22 | A kind of single-crystal silicon carbide stove control pressurer system |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107523874A true CN107523874A (en) | 2017-12-29 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610453225.1A Pending CN107523874A (en) | 2016-06-22 | 2016-06-22 | A kind of single-crystal silicon carbide stove control pressurer system |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107523874A (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201842897U (en) * | 2010-09-16 | 2011-05-25 | 中国电子科技集团公司第四十六研究所 | Purification and pressure control system of silicon carbide single-crystal growth furnace |
| CN102337583A (en) * | 2011-11-04 | 2012-02-01 | 湖南顶立科技有限公司 | System and method for controlling pressure in crystalline silicon ingot furnace |
| CN202705569U (en) * | 2012-06-13 | 2013-01-30 | 北京七星华创电子股份有限公司 | Pressure control system for silicon carbide single crystal growing furnace |
| CN205088334U (en) * | 2015-11-03 | 2016-03-16 | 宁波爱发科真空技术有限公司 | Automatic gas control equipment of control silicon wafer stove production |
| CN205856656U (en) * | 2016-06-22 | 2017-01-04 | 江苏拜尔特光电设备有限公司 | A kind of single-crystal silicon carbide stove control pressurer system |
-
2016
- 2016-06-22 CN CN201610453225.1A patent/CN107523874A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201842897U (en) * | 2010-09-16 | 2011-05-25 | 中国电子科技集团公司第四十六研究所 | Purification and pressure control system of silicon carbide single-crystal growth furnace |
| CN102337583A (en) * | 2011-11-04 | 2012-02-01 | 湖南顶立科技有限公司 | System and method for controlling pressure in crystalline silicon ingot furnace |
| CN202705569U (en) * | 2012-06-13 | 2013-01-30 | 北京七星华创电子股份有限公司 | Pressure control system for silicon carbide single crystal growing furnace |
| CN205088334U (en) * | 2015-11-03 | 2016-03-16 | 宁波爱发科真空技术有限公司 | Automatic gas control equipment of control silicon wafer stove production |
| CN205856656U (en) * | 2016-06-22 | 2017-01-04 | 江苏拜尔特光电设备有限公司 | A kind of single-crystal silicon carbide stove control pressurer system |
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| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20171229 |
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| RJ01 | Rejection of invention patent application after publication |