CN107516633A - A kind of gallium nitride lithographic method - Google Patents
A kind of gallium nitride lithographic method Download PDFInfo
- Publication number
- CN107516633A CN107516633A CN201710248109.0A CN201710248109A CN107516633A CN 107516633 A CN107516633 A CN 107516633A CN 201710248109 A CN201710248109 A CN 201710248109A CN 107516633 A CN107516633 A CN 107516633A
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- Prior art keywords
- etching
- gan
- gallium nitride
- atmosphere
- lithographic method
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- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 47
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 40
- 238000000034 method Methods 0.000 title claims abstract description 24
- 238000005530 etching Methods 0.000 claims abstract description 51
- 239000000463 material Substances 0.000 claims abstract description 21
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 10
- 239000007789 gas Substances 0.000 claims description 11
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 claims description 7
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 5
- 239000000460 chlorine Substances 0.000 claims description 4
- 230000008878 coupling Effects 0.000 claims description 4
- 238000010168 coupling process Methods 0.000 claims description 4
- 238000005859 coupling reaction Methods 0.000 claims description 4
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052786 argon Inorganic materials 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 229910052801 chlorine Inorganic materials 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 3
- 238000010894 electron beam technology Methods 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 238000004528 spin coating Methods 0.000 claims description 3
- 238000002604 ultrasonography Methods 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 239000008246 gaseous mixture Substances 0.000 claims 2
- 239000000377 silicon dioxide Substances 0.000 claims 1
- 229910002704 AlGaN Inorganic materials 0.000 abstract description 5
- 208000027418 Wounds and injury Diseases 0.000 abstract description 3
- 230000006378 damage Effects 0.000 abstract description 3
- 208000014674 injury Diseases 0.000 abstract description 3
- 238000001312 dry etching Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
Abstract
The invention discloses a kind of gallium nitride lithographic method, concrete operations include preparing dielectric layer；Prepare photoresist mask etching figure；Prepare medium mask etching figure；Remove photoresist；In O2, pre-etching GaN under Ar atmosphere；In Cl2、N2GaN is etched under atmosphere；5,6 steps are repeated, reach required etching depth；Remove remaining media layer.The present invention has high GaN/AlGaN material etch selection ratio；Low etching injury；Low is required to etching apparatus；The advantages that applied widely.
Description
Technical field
The present invention relates to a kind of processing method of semi-conducting material, more particularly to a kind of gallium nitride lithographic method.
Background technology
Semiconductor material with wide forbidden band gallium nitride (GaN) is with energy gap is wide, critical breakdown electric field intensity is big, saturated electrons
Drift velocity is high, dielectric constant is small and the features such as good chemical stability, is based particularly on the AlGaN/GaN of GaN material
Heterojunction structure has the two-dimensional electron gas of high concentration and high electron mobility so that GaN device for power switching has lower
Conducting resistance and Geng Gao working frequency, electronic equipment of future generation high-power to power device, high-frequency, small size can be met
With the requirement of hot operation.
It is link essential in GaN device processing technology to etch GaN material, because GaN material chemical property is stable,
Acid, the alkali of routine can not corrode GaN material, therefore typically carry out GaN material using dry etching technology in device technology
Etching.The technique of more representational dry etching GaN material is Masahito Kanamura in article Enhancement-
Mode GaN MIS-HEMTs With n-GaN/i-AlN/n-GaN Triple Cap Layer and High-k Gate
That is reported in Dielectrics uses Cl2Carry out dry etching.Using this dry etch process to GaN material etching injury
It is larger, and can not realize that GaN/AlGaN material selectivities etch.
The content of the invention
Goal of the invention：For problem above, the present invention proposes a kind of gallium nitride lithographic method.
Technical scheme：To realize the purpose of the present invention, the technical solution adopted in the present invention is：A kind of gallium nitride etching side
Method, specifically include following steps：
(1) dielectric layer is prepared on GaN material surface using depositing technics；
(2) conventional lithographic or electron beam technology are used, by spin coating photoresist, exposure, development, is formed in dielectric layer surface
Etched features；
(3) medium mask pattern is formed using dry etch process etch media layer；
(4) photoresist is removed using acetone, alcohol ultrasound；
(5) using sense coupling platform in 1 time pre-etching GaN of atmosphere；
(6) using sense coupling platform in 2 times etching GaN of atmosphere；
(7) repeat step 5,6, required etching depth is reached；
(8) remaining media layer is removed using dry etch process.
Atmosphere 1 is the mixed gas of oxygen and argon gas, O2: Ar ratios are 0.5: 1~3: 1；Etching cavity air pressure be 0.5~
3Pa, etching cavity temperature are 100 DEG C, and coil power be 130~300W, and bias power is 5~20W, etch period for 30~
50s。
Atmosphere 2 is the mixed gas of chlorine and nitrogen, Cl2∶N2Than 0.5: 1~3: 1；Etching cavity air pressure is 0.2~2Pa,
Etching cavity temperature is 100 DEG C, and coil power is 80~220W, and bias power is 2~20W, and etch period is 150~250s.
Beneficial effect：Its remarkable advantage is using O to the present invention compared with prior art2, Ar mixed gas pre-etchings, effectively
Improve GaN/A1GaN material etch selection ratio；Using Cl2、N2Mixed gas performs etching, can be in etching process to GaN materials
N rooms in material compensate, and effectively reduce etching injury；Low is required to etching apparatus；Available for all types of GaN device systems
It is applied widely in standby technique.
Brief description of the drawings
Fig. 1 is to prepare the structural representation of dielectric layer on GaN material surface；
Fig. 2 is the structural representation to form etched features；
Fig. 3 is the structural representation to form medium mask pattern；
Fig. 4 is the structural representation for removing photoresist；
Fig. 5 is the structural representation in 1 time pre-etching GaN of atmosphere；
Fig. 6 is the structural representation in 2 times etching GaN of atmosphere；
Fig. 7 is the structural representation for removing remaining media layer.
Embodiment
Technical scheme is further described with reference to the accompanying drawings and examples.
Gallium nitride lithographic method of the present invention, including dielectric growth, photo etched mask figure, etch media, removal light
Photoresist, in O2、Ar、Cl2、N2Etching GaN, etching remaining media are repeated in mixed gas.Specific method is as follows：
(1) dielectric layer 2 is prepared on the surface of GaN material 1 using depositing technics, such as Fig. 1；Dielectric layer 2 can be silicon nitride
(SiN), silica (SiO2) etc..
(2) conventional lithographic or electron beam technology are used, by spin coating photoresist, exposure, development, in the surface shape of dielectric layer 2
Into etched features 3, such as Fig. 2.
(3) medium mask pattern 4 is formed using dry etch process etch media layer 2, such as Fig. 3.
(4) photoresist, such as Fig. 4 are removed using acetone, alcohol ultrasound.
(5) it is in 1 time pre-etching GaN of atmosphere, etching cavity air pressure using inductively coupled plasma (ICP) etching platform
0.5~3Pa；Etching cavity temperature is 100 DEG C；Coil power is 130~300W, and bias power is 5~20W；Etch period is
30~50s, such as Fig. 5.Atmosphere 1 is oxygen (O2) and argon gas (Ar) mixed gas, O2: Ar ratios are 0.5: 1~3: 1.
Specifically, O2: Ar ratios are 1: 1；Etching cavity air pressure is 1Pa；Etching cavity temperature is 100 DEG C；Coil power is
150W, bias power 5W；Etch period is 50s.
(6) GaN are etched 2 times in atmosphere using inductively coupled plasma (ICP) etching platform, etching cavity air pressure is 0.2
~2Pa；Etching cavity temperature is 100 DEG C；Coil power is 80~220W, and bias power is 2~20W；Etch period be 150~
250s, such as Fig. 6.Atmosphere 2 is chlorine (Cl2) and nitrogen (N2) mixed gas, Cl2∶N2Than 0.5: 1~3: 1.
Specifically, Cl2∶N2Than 3: 1；Etching cavity air pressure is 0.5Pa；Etching cavity temperature is 100 DEG C；Coil power is
200W, bias power 10W；Etch period is 200s.
(7) 5,6 steps are repeated, reach required etching depth；Before etching depth needed for reaching, the material that is etched can not be with sky
Gas contacts.
(8) remaining media layer, such as Fig. 7 are removed using dry etch process.
Pass through etching, GaN material etching depth 34.3nm.With technique etching AlGaN material etching depth 4.2nm, GaN/
AlGaN etching selection ratios are 8: 1.
Claims (5)
- A kind of 1. gallium nitride lithographic method, it is characterised in that：Specifically include following steps：(1) dielectric layer is prepared on GaN material surface using depositing technics；(2) conventional lithographic or electron beam technology are used, by spin coating photoresist, exposure, development, is formed and etched in dielectric layer surface Figure；(3) medium mask pattern is formed using dry etch process etch media layer；(4) photoresist is removed using acetone, alcohol ultrasound；(5) using sense coupling platform in 1 time pre-etching GaN of atmosphere；(6) using sense coupling platform in 2 times etching GaN of atmosphere；(7) repeat step 5,6, required etching depth is reached；(8) remaining media layer is removed using dry etch process.
- 2. gallium nitride lithographic method according to claim 1, it is characterised in that：Dielectric layer is silicon nitride or silica.
- 3. gallium nitride lithographic method according to claim 1, it is characterised in that：Atmosphere 1 is the gaseous mixture of oxygen and argon gas Body, O2: Ar ratios are 0.5: 1~3: 1；Etching cavity air pressure is 0.5~3Pa, and etching cavity temperature is 100 DEG C, and coil power is 130~300W, bias power are 5~20W, and etch period is 30~50s.
- 4. gallium nitride lithographic method according to claim 1, it is characterised in that：Atmosphere 2 is the gaseous mixture of chlorine and nitrogen Body, Cl2∶N2Than 0.5: 1~3: 1；Etching cavity air pressure is 0.2~2Pa, and etching cavity temperature is 100 DEG C, coil power 80 ~220W, bias power are 2~20W, and etch period is 150~250s.
- 5. gallium nitride lithographic method according to claim 1, it is characterised in that：Before etching depth needed for reaching, it is etched Material not with air contact.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710248109.0A CN107516633B (en) | 2017-04-17 | 2017-04-17 | Gallium nitride etching method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710248109.0A CN107516633B (en) | 2017-04-17 | 2017-04-17 | Gallium nitride etching method |
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| Publication Number | Publication Date |
|---|---|
| CN107516633A true CN107516633A (en) | 2017-12-26 |
| CN107516633B CN107516633B (en) | 2020-08-28 |
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| CN201710248109.0A Active CN107516633B (en) | 2017-04-17 | 2017-04-17 | Gallium nitride etching method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113555283A (en) * | 2020-04-24 | 2021-10-26 | 江苏鲁汶仪器有限公司 | Method for etching heterojunction of GaN-based high-electron-mobility transistor |
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|---|---|---|---|---|
| CN1490850A (en) * | 2003-09-19 | 2004-04-21 | 清华大学 | Dry etching method for gallium nitride materials |
| CN101162693A (en) * | 2006-10-09 | 2008-04-16 | 西安能讯微电子有限公司 | Gallium nitride surface low damnification etching |
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| CN101335247A (en) * | 2007-06-29 | 2008-12-31 | 富士通株式会社 | Semiconductor device and manufacture method thereof |
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| CN102041508A (en) * | 2009-10-23 | 2011-05-04 | 中芯国际集成电路制造(上海)有限公司 | Groove etching method |
| CN102915911A (en) * | 2012-09-24 | 2013-02-06 | 中国电子科技集团公司第五十五研究所 | Etching method for improving bottom of silicon carbide table board |
| CN104637793A (en) * | 2014-12-31 | 2015-05-20 | 国家电网公司 | Manufacturing method of terminal structure of silicon carbide device |
-
2017
- 2017-04-17 CN CN201710248109.0A patent/CN107516633B/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1490850A (en) * | 2003-09-19 | 2004-04-21 | 清华大学 | Dry etching method for gallium nitride materials |
| CN101162693A (en) * | 2006-10-09 | 2008-04-16 | 西安能讯微电子有限公司 | Gallium nitride surface low damnification etching |
| CN101335247A (en) * | 2007-06-29 | 2008-12-31 | 富士通株式会社 | Semiconductor device and manufacture method thereof |
| CN101335311A (en) * | 2007-06-29 | 2008-12-31 | 上海蓝光科技有限公司 | Preparing process of gallium nitride based LED large power chip |
| CN101459074A (en) * | 2007-12-13 | 2009-06-17 | 中芯国际集成电路制造(上海)有限公司 | Etching method and dual damascene structure forming method |
| CN101226891A (en) * | 2008-02-01 | 2008-07-23 | 中国电子科技集团公司第五十五研究所 | Method for forming grounding via hole between gallium nitride device and circuit |
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| CN113555283A (en) * | 2020-04-24 | 2021-10-26 | 江苏鲁汶仪器有限公司 | Method for etching heterojunction of GaN-based high-electron-mobility transistor |
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| CN107516633B (en) | 2020-08-28 |
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