CN107513766A - A kind of heat-insulation cage metal frame for being used to cast chamfering G7 polysilicons - Google Patents

A kind of heat-insulation cage metal frame for being used to cast chamfering G7 polysilicons Download PDF

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Publication number
CN107513766A
CN107513766A CN201710961696.8A CN201710961696A CN107513766A CN 107513766 A CN107513766 A CN 107513766A CN 201710961696 A CN201710961696 A CN 201710961696A CN 107513766 A CN107513766 A CN 107513766A
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CN
China
Prior art keywords
fixed
connecting plate
side connecting
sill strip
lifting plate
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CN201710961696.8A
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Chinese (zh)
Inventor
司荣进
路景刚
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Jiangsu Meike Solar Technology Co Ltd
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Jiangsu Meike Silicon Energy Co Ltd
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Priority to CN201710961696.8A priority Critical patent/CN107513766A/en
Publication of CN107513766A publication Critical patent/CN107513766A/en
Pending legal-status Critical Current

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    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B28/00Production of homogeneous polycrystalline material with defined structure
    • C30B28/04Production of homogeneous polycrystalline material with defined structure from liquids
    • C30B28/06Production of homogeneous polycrystalline material with defined structure from liquids by normal freezing or freezing under temperature gradient
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02Elements
    • C30B29/06Silicon

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Silicon Compounds (AREA)

Abstract

The invention discloses a kind of heat-insulation cage metal frame for being used to cast chamfering G7 polysilicons, it is related to photovoltaic manufacturing field, including four pieces of upper backup pads, upper backup pad includes pars intermedia and two kinks, the linear type of pars intermedia, kink connects the both ends of pars intermedia and forms two obtuse angles for being located at homonymy with pars intermedia respectively, upper backup pad surrounds octagon and adjacent bend portion is provided with gap, the bottom of two neighboring kink is fixed with top bar, side connecting plate is fixed with upper top bar, upper side connecting plate bottom is fixed with sill strip, the bottom of pars intermedia is fixed with epipleural, upper sill strip bottom is fixed with lower top bar, some vertical and equally distributed lower side connecting plate is fixed with the bar of lower top, lower side connecting plate bottom is fixed with lower sill strip, the bottom of epipleural is connected with lower side panel.The thorough G4 and G5 polycrystalline furnaces for having broken GTSolar of design of the present invention can not be transformed into G7 situation.

Description

A kind of heat-insulation cage metal frame for being used to cast chamfering G7 polysilicons
Technical field
The present invention relates to photovoltaic manufacturing technology field, more particularly to a kind of heat-insulation cage for being used to cast chamfering G7 polysilicons Metal frame.
Background technology
At present, as the increase of domestic installed capacity, silicon chip are expanded production.By taking existing G6 heat-insulation cages as an example, outside metal frame Diagonal distance is 1794-1795 millimeters, and spacing is 1500 millimeters in opposite side.Under such size, the size of crucible can be accommodated In 960-1060 millimeters, the polycrystalline of casting is 6 × 6, i.e., the G6 polycrystal silicon ingots for having 36 pieces small brilliant brick after evolution.For a long time for G4 the and G5 polycrystalline furnaces of GTSolar productions can not transform G7 as(There is the polycrystal silicon ingot of 49 pieces small brilliant brick after evolution), how to beat Breaking this situation turns into a great problem.
The content of the invention
The present invention be directed to above-mentioned technical problem, the shortcomings that overcoming prior art, there is provided a kind of for casting chamfering G7 polycrystalline The heat-insulation cage metal frame of silicon, G7 situation can not be transform as by thoroughly breaking GTSolar G4 and G5 polycrystalline furnaces.
In order to solve the above technical problems, the present invention provides a kind of heat-insulation cage metal for being used to cast chamfering G7 polysilicons Frame, including four pieces of upper backup pads, upper backup pad include pars intermedia and two kinks, the linear type of pars intermedia, kink difference Connect the both ends of pars intermedia and form two obtuse angles for being located at homonymy with pars intermedia, four pieces of upper backup pads surround octagon and adjacent Be provided with gap between kink, the bottom of two neighboring kink is fixed with top bar, be fixed with upper top bar it is some vertical and Equally distributed upper side connecting plate, upper side connecting plate bottom are fixed with sill strip, and the bottom of pars intermedia is fixed with epipleural, upside The corner of plate is fixed with upper top bar, the upper sill strip of its both sides respectively, and upper sill strip bottom is fixed with lower top bar, is fixed with lower top bar Some vertical and equally distributed lower side connecting plate, lower side connecting plate bottom are fixed with lower sill strip, and the bottom of epipleural is connected with Lower side panel, lower top bar, the lower sill strip of the corner of lower side panel respectively with its both sides are fixed.
Technique effect:The thorough G4 and G5 polycrystalline furnaces for having broken GTSolar of design of the present invention can not be transformed into G7 office Face so that heat-insulation cage inner space is widened, and production capacity produces 25 pieces of brilliant bricks by original single ingot increases to single ingot 49 pieces of crystalline substances of production Brick, yield greatly improve.
The technical scheme that further limits of the present invention is:
Further, upper side connecting plate is identical with the shape and structure of lower side connecting plate, the shape and structure phase of upper sill strip and lower top bar Together, upper side connecting plate, upper sill strip are symmetrical arranged with lower side connecting plate, lower top bar respectively.
Preceding described a kind of heat-insulation cage metal frame for being used to cast chamfering G7 polysilicons, wherein two pieces of upper backup pads is adjacent Kink be provided with first lifting plate, be respectively equipped with addition on two pieces of upper backup pads the second lifting plate and the 3rd lifting plate, second Lifting plate and the 3rd lifting plate are symmetric and are provided close to the kink of the first lifting plate and the junction of pars intermedia.
A kind of preceding described heat-insulation cage metal frame for being used to cast chamfering G7 polysilicons, the first lifting plate is located at two neighboring Above gap between kink, its both sides is provided with contiguous block, and the bottom of the first lifting plate is fixed in one end of contiguous block, another End is fixed on above the kink of upper backup pad.
A kind of preceding described heat-insulation cage metal frame for being used to cast chamfering G7 polysilicons, the second lifting plate and the 3rd lifting plate Both sides be provided with pad, pad is located between upper backup pad and the second lifting plate or upper backup pad and the 3rd lifting plate.
A kind of preceding described heat-insulation cage metal frame for being used to cast chamfering G7 polysilicons, lower side panel are set with lower sill strip junction There is bottom stiffener, a bottom stiffener part is located at lower side panel bottom, and remainder is located at lower sill strip bottom.
Contrasted with existing G6 heat-insulation cages metal frame, the beneficial effects of the invention are as follows:
(1)Present invention reduces the length of upper top bar, upper sill strip, lower top bar and lower sill strip;
(2)The present invention has widened the aperture of upper side connecting plate, epipleural and lower side panel;
(3)The present invention forms the heat-insulated basket structure of a hexagon, the big chamfering of edge, makes pair of heat-insulated inside loading space Angle is reduced, and diagonal pitch is widened;
(4)The present invention has widened internal loading space in the case where not increasing heat-insulation cage size, substantially increases brilliant brick production Amount.
Brief description of the drawings
Fig. 1 is the overall structure diagram of the present embodiment;
Fig. 2 is the enlarged drawing of local A in Fig. 1;
Fig. 3 is the enlarged drawing of local B in Fig. 1;
Fig. 4 is the upper top bar structural representation of the present embodiment;
Fig. 5 a, the upper side connecting plate that 5b, 5c are the present embodiment are respectively to schematic diagram;
Fig. 6 a, the upper sill strip that 6b, 6c are the present embodiment are respectively to schematic diagram;
Fig. 7 is the upside plate structure schematic diagram of the present embodiment;
Fig. 8 a, 8b are the upper backup pad of the present embodiment respectively to schematic diagram;
Fig. 9 is the first lifting plate structure schematic diagram of the present embodiment;
Figure 10 a, the contiguous block that 10b, 10c are the present embodiment are respectively to schematic diagram;
Figure 11 a, the pad that 11b, 11c are the present embodiment are respectively to schematic diagram;
Figure 12 is the lower sill strip structural representation of the present embodiment;
Figure 13 is the downside plate structure schematic diagram of the present embodiment;
Figure 14 is the bottom stiffener structural representation of the present embodiment;
Figure 15 is G5 polycrystal silicon ingot schematic diagrames;
Figure 16 is G6 polycrystal silicon ingot schematic diagrames;
Figure 17 is G7 polycrystal silicon ingot schematic diagrames;
Wherein:1st, upper top bar;2nd, upper side connecting plate;3rd, upper sill strip;4th, epipleural;5th, upper backup pad;6th, the first lifting plate;7th, even Connect block;8th, pad;9th, lower top bar;10th, lower side connecting plate;11st, lower sill strip;12nd, lower side panel;13 bottom stiffeners;14th, second hang Loading board;15th, the 3rd lifting plate.
Embodiment
A kind of heat-insulation cage metal frame for being used to cast chamfering G7 polysilicons that the present embodiment provides, structure such as Fig. 1-14 institutes Show.
The heat-insulation cage metal frame includes four pieces of upper backup pads 5, and upper backup pad 5 includes pars intermedia and two kinks, middle The linear type in portion, kink connect the both ends of pars intermedia and form two obtuse angles for being located at homonymy with pars intermedia respectively.On four pieces Supporting plate 5, which surrounds, is provided with gap between octagon and adjacent bend portion.
The bottom of two neighboring kink is fixed with top bar 1;It is some vertical and equally distributed to be fixed with upper top bar 1 Upper side connecting plate 2;The upper bottom of side connecting plate 2 is fixed with sill strip 3;The bottom of pars intermedia is fixed with epipleural 4, epipleural 4 Corner is fixed with upper top bar 1, the upper sill strip 3 of its both sides respectively;The upper bottom of sill strip 3 is fixed with lower top bar 9;It is fixed on lower top bar 9 There is some vertical and equally distributed lower side connecting plate 10;The lower bottom of side connecting plate 10 is fixed with lower sill strip 11;The bottom of epipleural 4 Portion is connected with lower side panel 12, and lower top bar 9, the lower sill strip 11 of the corner of lower side panel 12 respectively with its both sides are fixed.Wherein, upside connects Fishplate bar 2 is identical with the shape and structure of lower side connecting plate 10, and upper sill strip 3 is identical with the shape and structure of lower top bar 9, upper side connecting plate 2, Upper sill strip 3 is symmetrical arranged with lower side connecting plate 10, lower top bar 9 respectively.
The adjacent bend portion of wherein two pieces upper backup pads 5 is provided with the first lifting plate 6, and the first lifting plate 6 is located at adjacent two Above gap between individual kink, its both sides is provided with contiguous block 7, and the bottom of the first lifting plate 6 is fixed in one end of contiguous block 7 Portion, the other end are fixed on above the kink of upper backup pad 5.
The second lifting plate 14 and the 3rd lifting plate 15, the second lifting He of plate 14 are respectively equipped with other two pieces of upper backup pads 5 3rd lifting plate 15 is symmetric and is provided close to the kink of the first lifting plate 6 and the junction of pars intermedia.Second lifting The both sides that plate 14 and the 3rd lifts plate 15 are provided with pad 8, and pad 8 is located at upper backup pad 5 and second and lifts plate 14 or upper backup pad 5 Between the 3rd lifting plate 15.
Lower side panel 12 is provided with bottom stiffener 13 with the lower junction of sill strip 11, and the part of bottom stiffener 13 is located at lower side panel 12 bottoms, remainder are located at the lower bottom of sill strip 11.
The mounting means of above-mentioned heat-insulation cage metal frame is as follows:
First, that upper top bar 1, upper side connecting plate 2, upper sill strip 3, epipleural 4 and upper backup pad 5 are fixed into composition with fixture is heat-insulated The upper part of cage;Then lower top bar 9, lower side connecting plate 10, lower sill strip 11, lower side panel 12 and bottom stiffener 13 are used into fixture The lower part of fixed composition heat-insulation cage;The first lifting plate 6, second is finally lifted into the lifting plate 15 of plate the 14, the 3rd and pad 8 is installed At the top of heat-insulation cage, for being connected with heat-insulation cage elevating screw.
As illustrated in figs. 13-15, the invention enables the yield of polysilicon to greatly improve for G5, G6 and chamfering G7 polycrystal silicon ingots.
In addition to the implementation, the present invention can also have other embodiment.It is all to use equivalent substitution or equivalent transformation shape Into technical scheme, all fall within the protection domains of application claims.

Claims (6)

  1. A kind of 1. heat-insulation cage metal frame for being used to cast chamfering G7 polysilicons, it is characterised in that:Including four pieces of upper backup pads(5), The upper backup pad(5)Including pars intermedia and two kinks, the linear type of pars intermedia, during the kink connects respectively Between portion both ends and with pars intermedia formed two be located at homonymy obtuse angles, four pieces of upper backup pads(5)Surround octagon and phase Gap is provided between adjacent kink, the bottom of the two neighboring kink is fixed with top bar(1), the upper top bar(1)On It is fixed with some vertical and equally distributed upper side connecting plate(2), the upper side connecting plate(2)Bottom is fixed with sill strip(3), The bottom of the pars intermedia is fixed with epipleural(4), the epipleural(4)The corner upper top bar with its both sides respectively(1), on Sill strip(3)It is fixed, the upper sill strip(3)Bottom is fixed with lower top bar(9), the lower top bar(9)On be fixed with it is some vertical and Equally distributed lower side connecting plate(10), the lower side connecting plate(10)Bottom is fixed with lower sill strip(11), the epipleural(4) Bottom be connected with lower side panel(12), the lower side panel(12)The corner lower top bar with its both sides respectively(9), lower sill strip(11) It is fixed.
  2. A kind of 2. heat-insulation cage metal frame for being used to cast chamfering G7 polysilicons according to claim 1, it is characterised in that:Institute State side connecting plate(2)With lower side connecting plate(10)Shape and structure it is identical, the upper sill strip(3)With lower top bar(9)Shape Structure is identical, the upper side connecting plate(2), upper sill strip(3)Respectively with lower side connecting plate(10), lower top bar(9)It is symmetrical arranged.
  3. A kind of 3. heat-insulation cage metal frame for being used to cast chamfering G7 polysilicons according to claim 1, it is characterised in that:Its In two pieces of upper backup pads(5)Adjacent bend portion be provided with first lifting plate(6), two pieces of upper backup pads in addition(5)It is upper to set respectively There is the second lifting plate(14)With the 3rd lifting plate(15), the second lifting plate(14)With the 3rd lifting plate(15)It is symmetric And it is provided close to the first lifting plate(6)Kink and pars intermedia junction.
  4. A kind of 4. heat-insulation cage metal frame for being used to cast chamfering G7 polysilicons according to claim 3, it is characterised in that:Institute State the first lifting plate(6)Above gap between two neighboring kink, its both sides is provided with contiguous block(7), the connection Block(7)One end be fixed on the first lifting plate(6)Bottom, the other end is fixed on upper backup pad(5)Kink above.
  5. A kind of 5. heat-insulation cage metal frame for being used to cast chamfering G7 polysilicons according to claim 3, it is characterised in that:Institute State the second lifting plate(14)With the 3rd lifting plate(15)Both sides be provided with pad(8), the pad(8)Positioned at upper backup pad(5) With the second lifting plate(14)Or upper backup pad(5)With the 3rd lifting plate(15)Between.
  6. A kind of 6. heat-insulation cage metal frame for being used to cast chamfering G7 polysilicons according to claim 1, it is characterised in that:Institute State lower side panel(12)With lower sill strip(11)Junction is provided with bottom stiffener(13), the bottom stiffener(13)A part is located at Lower side panel(12)Bottom, remainder are located at lower sill strip(11)Bottom.
CN201710961696.8A 2017-10-16 2017-10-16 A kind of heat-insulation cage metal frame for being used to cast chamfering G7 polysilicons Pending CN107513766A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201710961696.8A CN107513766A (en) 2017-10-16 2017-10-16 A kind of heat-insulation cage metal frame for being used to cast chamfering G7 polysilicons

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201710961696.8A CN107513766A (en) 2017-10-16 2017-10-16 A kind of heat-insulation cage metal frame for being used to cast chamfering G7 polysilicons

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CN107513766A true CN107513766A (en) 2017-12-26

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016082525A1 (en) * 2014-11-27 2016-06-02 吕铁铮 Device for moving small heat insulating plate at bottom of polycrystalline silicon ingot furnace and polycrystalline silicon ingot furnace
CN105803526A (en) * 2016-05-17 2016-07-27 江西旭阳雷迪高科技股份有限公司 Polycrystal ingot furnace thermal field
CN205774920U (en) * 2016-05-17 2016-12-07 江西旭阳雷迪高科技股份有限公司 A kind of polycrystalline ingot furnace thermal field
CN206486622U (en) * 2017-01-18 2017-09-12 江苏美科硅能源有限公司 A kind of device that G7 polycrystal silicon ingots are cast for GT polycrystalline furnaces

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016082525A1 (en) * 2014-11-27 2016-06-02 吕铁铮 Device for moving small heat insulating plate at bottom of polycrystalline silicon ingot furnace and polycrystalline silicon ingot furnace
CN105803526A (en) * 2016-05-17 2016-07-27 江西旭阳雷迪高科技股份有限公司 Polycrystal ingot furnace thermal field
CN205774920U (en) * 2016-05-17 2016-12-07 江西旭阳雷迪高科技股份有限公司 A kind of polycrystalline ingot furnace thermal field
CN206486622U (en) * 2017-01-18 2017-09-12 江苏美科硅能源有限公司 A kind of device that G7 polycrystal silicon ingots are cast for GT polycrystalline furnaces

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Effective date of registration: 20201223

Address after: 968 GANGLONG Road, Yangzhong Economic Development Zone, Zhenjiang City, Jiangsu Province

Applicant after: Jiangsu Meike Solar Energy Technology Co.,Ltd.

Address before: 968 GANGLONG Road, Yangzhong Economic Development Zone, Zhenjiang City, Jiangsu Province

Applicant before: JIANGSU MEIKE SILICON ENERGY Co.,Ltd.

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Address after: 968 GANGLONG Road, Yangzhong Economic Development Zone, Zhenjiang City, Jiangsu Province

Applicant after: Jiangsu Meike Solar Energy Technology Co.,Ltd.

Address before: 968 GANGLONG Road, Yangzhong Economic Development Zone, Zhenjiang City, Jiangsu Province

Applicant before: Jiangsu Meike Solar Energy Technology Co.,Ltd.

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Application publication date: 20171226

RJ01 Rejection of invention patent application after publication