CN107508127B - Microwave photon signal frequency multiplication method and device with amplitude equalization effect - Google Patents
Microwave photon signal frequency multiplication method and device with amplitude equalization effect Download PDFInfo
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- H—ELECTRICITY
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/10084—Frequency control by seeding
- H01S3/10092—Coherent seed, e.g. injection locking
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- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
- H01S3/067—Fibre lasers
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- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/10038—Amplitude control
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- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
- H01S3/1061—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using a variable absorption device
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- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
- H01S3/107—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using electro-optic devices, e.g. exhibiting Pockels or Kerr effect
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- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
- H01S3/108—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering
- H01S3/109—Frequency multiplication, e.g. harmonic generation
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- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/30—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range using scattering effects, e.g. stimulated Brillouin or Raman effects
- H01S3/302—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range using scattering effects, e.g. stimulated Brillouin or Raman effects in an optical fibre
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- H—ELECTRICITY
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- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
Abstract
The invention discloses a microwave photon signal frequency multiplication method and a device with an amplitude equalization effect, wherein the method realizes the frequency multiplication and the amplitude equalization of a microwave photon signal by utilizing the injection locking phenomenon and the photo-optical modulation effect in a semiconductor laser; the device used in the method comprises a light source, a modulation device, a polarization controller A, an optical coupler A, an optical circulator, a semiconductor laser, an adjustable optical delay line, an optical band-pass filter, an optical coupler B, a polarization controller B and an optical amplifier. The frequency multiplier has the injection locking frequency multiplication function, the amplitude of the frequency multiplication microwave photon signal is balanced, and meanwhile, the working wavelength of the optical signal can realize wideband tunability.
Description
Technical Field
The invention relates to the technical field of communication, in particular to a microwave photon signal frequency multiplication method and device with an amplitude equalization effect.
Background
The frequency multiplier (frequency multiplier) is a circuit that makes the output signal frequency equal to an integer multiple of the input signal frequency. If the input frequency is f1, the output frequency is f0=nf1, and the coefficient n is any positive integer, called the frequency multiplication times. The frequency multiplier has wide application, for example, after the transmitter adopts the frequency multiplier, the main vibrator can oscillate at lower frequency so as to improve the frequency stability; frequency modulation equipment uses a frequency multiplier to increase the frequency offset; in a phase keying communication machine, a frequency multiplier is an important component unit of a carrier recovery circuit.
Injection locking (Injection locking) refers to the frequency effect of one simple harmonic oscillation being disturbed by another simple harmonic oscillation of similar frequency. When the frequency of the second simple harmonic oscillation is close enough to the first one and the coupling is large enough, the first oscillation is fully occupied, i.e. the first oscillation follows the second oscillation. In the frequency multiplier, when the frequency difference between a certain mode of the master laser and the free oscillation mode of the slave laser is not large, the mode can be effectively injected into the slave laser, the free oscillation mode of the slave laser is restrained, and the frequency and the phase of the free oscillation mode of the slave laser follow the operation phenomenon of the master laser. The frequency range in which injection locking can occur is referred to as the injection locking range. When the primary laser carries a frequency offAnd (2) RF signal of (C)NThe step sidebands fall into the injection locking range of the slave laser, the optical signal is injected into the slave laser, and the frequency and the phase of the slave laser are followedNThe change of the order sideband is expressed by that the sideband is selectively amplified, namely, the signal light is realized after injection lockingNFrequency multiplication.
However, the frequency multiplication method of implementing microwave photon signals by means of injection locking has a common disadvantage, namely, interference of low-order harmonic components, which is expressed in time domainNThe amplitude of the multiplied signal is uneven. The existence of this disadvantage makes it difficult to apply the frequency multiplication signal of the existing injection-locked frequency multiplier directly to practice.
There has been a relatively extensive study on this type of problem.
For example, in Optics Express, vol.43, no. 2, pp. 850-859, 2009, there is a paper entitled "Peak equalization of rational-logical-mode-locking fiberized semiconductor laser pulse via optical injection induced gain modulation". The paper discloses a method of injecting predistortion pulse trains into a mode-locked laser to obtain a rational frequency-doubled mode-locked signal output with balanced amplitude. In the method, the mode-locked laser can output frequency multiplication microwave photon signals, and the amplitude of the frequency multiplication signals is interfered by low-order harmonic components like signal light output by injection locking, so that the signal amplitude is uneven. And shaping the frequency multiplication signal by injecting additional signal light into the ring laser, so that the amplitude of the finally output frequency multiplication signal is balanced. However, this approach requires an additional laser and the injected predistortion signal needs to be precisely controlled, adding cost and complexity.
An article entitled "equalization of harmonic mode-locked optical pulses using active filters" is available on the optical journal, vol 36, no. 3, 0306003, 2016. A method of injecting an amplitude-unbalanced double frequency mode-locked signal into an active loop filter for secondary filtering to achieve amplitude flattening is reported herein. In the active annular filter, a semiconductor optical amplifier is used as a gain medium and an optical-optical modulation device, an optical delay line in the filter is tuned to change a Free Spectral Range (FSR), spectral components at specific frequency intervals pass through, other components are restrained, and amplitude balance of frequency multiplication microwave photon signals is realized. However, such methods require the use of additional active devices, which do not adequately exploit the functionality of the devices.
Therefore, the existing injection locking frequency multiplier has the problems that the amplitude of the frequency multiplication signal is uneven and the frequency multiplication signal is difficult to directly apply when the frequency multiplication microwave photon signal is multiplied, and the existing injection locking frequency multiplier has low device utilization rate, higher cost and complex operation.
Disclosure of Invention
The invention aims to provide a microwave photon signal frequency multiplication method and device with an amplitude equalization effect. The frequency multiplier has the injection locking frequency multiplication function, the amplitude of the frequency multiplication microwave photon signal is balanced, and meanwhile, the working wavelength of the optical signal can realize wideband tunability.
The technical scheme of the invention is as follows: a microwave photon signal frequency multiplication method with an amplitude equalization effect is characterized in that: the method utilizes the injection locking phenomenon and the optical-optical modulation effect in the semiconductor laser to realize the frequency multiplication and the amplitude balance of the microwave photon signals.
In the aforementioned microwave photon signal frequency multiplication method with amplitude equalization effect, the injection locking phenomenon is implemented by setting the wavelength of the laser ASo that the N-order sidebands of the modulated light signal thereof fall into a wavelength of +>The injection locking region of the semiconductor laser of the (2) is selectively amplified by the N-order sidebands, so that the injection locking frequency doubling phenomenon of the microwave photon signal is realized.
In the aforementioned microwave photon signal frequency multiplication method with the amplitude equalization effect, the optical-optical modulation effect is that an active annular filter is formed by arranging a semiconductor laser, an optical delay line and an optical filter, and the amplitude equalization of the N-frequency multiplication microwave photon signal is realized by adjusting the optical delay line so that the optical frequency comb with frequency intervals passes through the active annular filter at maximum efficiency.
In the aforementioned microwave photon signal frequency multiplication method with amplitude equalization effect, the wavelength of the optical filterThe frequency multiplication and the amplitude equalization of the microwave photon signals are realized by utilizing the injection locking phenomenon and the optical-optical modulation effect in the semiconductor laser.
The device with the amplitude equalization effect for constructing the microwave photon signal frequency multiplication method comprises a light source and a modulation device, wherein the light source and the modulation device are connected with the input end of an optical coupler A through a polarization controller A, the output end of the optical coupler A is connected with a port I of an optical circulator, a port II of the optical circulator is connected with a semiconductor laser, a port III of the optical circulator is connected with an optical band pass filter through an adjustable delay line, the optical band pass filter is connected with the input end of an optical coupler B, the optical coupler B further comprises an output port and a signal output port, the output port of the optical coupler B is connected with the polarization controller B, the polarization controller B is connected with the input end of an optical amplifier, and the output end of the optical amplifier is connected with the input end of the optical coupler A.
In the foregoing apparatus, the light source and the modulation device are of an indirect modulation structure, and include a laser a, where the laser a is connected to an optical input end of the modulator, and an output end of the radio frequency source a is connected to a radio frequency input end of the modulator; the laser A is a wavelength tunable continuous light laser.
In the foregoing apparatus, the modulator may be an electro-optical modulator, and the electro-optical modulator may be a mach-zehnder modulator, a phase modulator, or an electro-absorption modulator.
In the device, the light source and the modulation device are of a direct modulation type structure and comprise a laser B and a radio frequency source B, and the output end of the radio frequency source B is connected with the radio frequency input end of the laser B; the laser B is a wavelength tunable semiconductor direct modulation laser.
In the foregoing apparatus, the semiconductor laser is a distributed feedback laser or a fabry-perot (F-P) cavity semiconductor laser.
In the foregoing apparatus, the optical amplifier may be an erbium-doped fiber amplifier, a semiconductor optical amplifier, or a fiber raman amplifier.
Disconnecting polarization controller B from coupler A, adjusting the wavelength of light source and laser A (i.e. main laser) in modulation moduleSo that the module outputs a modulated signalNThe step sidebands fall at a wavelength +.>I.e. the slave laser). After injection locking, the laser is obtainedNThe frequency-doubled microwave photon signal, but with lower harmonic components.
Connecting the polarization controller B and the coupler A, and tuning the center wavelength of the optical band-pass filterOnly make the wavelength be/>The optical field of (2) passes through the filter and can form oscillation in the annular cavity; in this case, the annular cavity is equivalent to an active annular filter: an optical amplifier provides gain for the oscillating optical field; photo-optical modulation by nonlinear effect occurs in semiconductor laser with wavelength +.>Is subject to->、/>Modulation of two light fields. By adjusting the adjustable light delay line, the cavity length is changed, so that the FSR corresponding to the annular cavity is changed, and only the frequency interval is changedNfThrough which the optical frequency components of (a) pass, while other intervalspf （p=1,2,…, N-1) Is suppressed; finally, a wavelength of +.>A kind of electronic deviceNThe amplitude of the frequency multiplication equalizes the microwave photon signal.
Compared with the prior art, the semiconductor laser can not only be used as a slave laser to realize injection lockingNFrequency multiplication, also can participate as an optical-optical modulator in a ring cavityNThe amplitude of the frequency multiplication microwave photon signal is balanced, the function of the device is fully invoked, the utilization rate of the device is improved, and the frequency multiplication microwave photon signal has the advantages of simple structure and low cost; in addition, by providing an optical bandpass filter, which is an optical bandpass filter with an adjustable center wavelength, the filter can determine the wavelength of the final frequency-doubled optical signal, and thus the operating wavelength of the optical signal can be tuned in a broadband manner. In summary, the frequency multiplier of the invention not only has injection locking frequency multiplication function, but also equalizes the amplitude of frequency multiplication microwave photon signals, and simultaneously the working wavelength of the optical signals can realize wideband tunabilityThe utilization rate of the device is obviously improved, the structure is simple, the cost is low, and the operation is simple.
Drawings
FIG. 1 is a schematic structural diagram of embodiment 1 of the present invention;
FIG. 2 is a schematic structural diagram of embodiment 2 of the present invention;
FIG. 3 shows the implementation of a microwave photon signal after injection lockingNSchematic diagram of frequency multiplication.
The marks in the drawings are: 1-light source and modulating device, 1 a-laser A, 1B-modulator, 1 c-radio frequency source A, 1 d-laser B, 1 e-radio frequency source B, 2-polarization controller A, 3-optical coupler A, 4-optical circulator, 4 a-port one, 4B-port two, 4 c-port three, 5-distributed feedback laser, 6-tunable optical delay line, 7-optical band pass filter, 8-optical coupler B, 9-polarization controller B, 10-erbium doped fiber amplifier.
Detailed Description
The invention is further illustrated by the following figures and examples, which are not intended to be limiting.
Example 1. A microwave photon signal frequency multiplication method and device with amplitude equalization effect, as shown in figures 1 and 3, uses injection locking phenomenon and light-light modulation effect in semiconductor laser to realize frequency multiplication and amplitude equalization of microwave photon signal.
The injection locking phenomenon is realized by setting the wavelength of the laser ASo that the N-order sidebands of the modulated light signal thereof fall into a wavelength of +>The injection locking region of the semiconductor laser of the (2) is amplified selectively, so that the injection locking frequency doubling phenomenon of microwave photon signals is realized; the optical-optical modulation function is that an active annular filter is formed by arranging a semiconductor laser, an optical delay line and an optical filter, and the optical frequency comb with frequency intervals passes through the active annular filter at maximum efficiency by adjusting the optical delay lineThe wave device realizes the amplitude balance of the N frequency multiplication microwave photon signals; wavelength of the optical filter +.>The frequency multiplication and the amplitude equalization of the microwave photon signals are realized by utilizing the injection locking phenomenon and the optical-optical modulation effect in the semiconductor laser.
The device constructed by the microwave photon signal frequency multiplication method with the amplitude equalization effect comprises the following steps: the optical coupler comprises a light source and a modulation device 1, wherein the light source and the modulation device 1 are connected with an input end 3a of an optical coupler A3 through a polarization controller A2, an output end of the optical coupler A3 is connected with a port one 4a of an optical circulator 4, a port two 4B of the optical circulator 4 is connected with a semiconductor laser 5, a port three 4c of the optical circulator 4 is connected with an optical band pass filter 7 through an adjustable delay line 6, the optical band pass filter 7 is connected with an input end of an optical coupler B8, the optical coupler B8 further comprises an output port 8a and a signal output port 8B, the output port 8a of the optical coupler B8 is connected with a polarization controller B9, the polarization controller B9 is connected with an input end of an optical amplifier 10, and an output end of the optical amplifier 10 is connected with an input end 3B of the optical coupler A3.
The light source and modulation device 1 is of an indirect modulation type structure and comprises a laser A1a, wherein the laser A1a is connected with the light input end of a modulator 1b, and the output end of a radio frequency source A1c is connected with the radio frequency input end of the modulator 1 b; the laser A1a is a wavelength-tunable continuous light laser; the semiconductor laser 5 is a distributed feedback laser or a Fabry-Perot F-P cavity semiconductor laser; the optical amplifier 10 is an erbium-doped fiber amplifier, a semiconductor optical amplifier, or a fiber raman amplifier.
The modulator 1b is an electro-optical modulator, which is a mach-zehnder modulator, a phase modulator or an electro-absorption modulator.
Working principle: first, the polarization controller B9 is disconnected from the coupler A3. The laser A1a generates a wavelength ofInto the input of the modulator 1b, the optical field being emitted by the radio frequency source 1cThe frequency isfThe polarization controller A2 adjusts the wavelength to +.>The polarization state of the optical field of (2) is injected into the optical cavity with the wavelength of +.>Is provided in the distributed feedback laser 5; adjusting the wavelength of laser A1a +.>So that it isNThe order sidebands fall into the injection locking range of the distributed feedback laser 5, the output envelope frequency at port three 4c of the optical circulator 4 isNfIs a microwave photon signal of (a); at this time, the envelope signal has a frequency in the electric spectrum affected by other optical sidebandspf （p=1,2,…,N-1) Is provided, and then, a polarization controller B9 is connected with a coupler A3, and the center wavelength of the optical band-pass filter 7 is tuned to +.>And->. At this time, only the wavelength is +.>The optical field of (2) passes through an optical band-pass filter 7, is fed back and injected into a distributed feedback laser 5 and forms oscillation in the annular cavity; the annular cavity is equivalent to an active annular filter: an optical amplifier provides gain for the oscillating optical field; the distributed feedback laser 5 is an optical-optical modulation device with wavelength +.>Is subject to->、/>Modulation of two light fields; the adjustable light delay line 6 adjusts the cavity length of the annular cavity; the optical band-pass filter 7 determines the operating wavelength of the output light to be +.>The method comprises the steps of carrying out a first treatment on the surface of the The optical coupler B8 outputs a final light field; polarization controller B9 adjusts the wavelength to +.>Is a polarization state of the light field of (c). Adjusting the adjustable delay line 6 appropriately, changing the cavity length so that the FSR corresponding to the annular cavity is changed, only the frequency intervalNfThrough which the optical frequency components of (a) pass, while other intervalspf （p=1,2,…,N-1) Is suppressed. Finally, a wavelength of +_ is obtained at the signal output of coupler B8>A kind of electronic deviceNThe amplitude of the frequency multiplication equalizes the microwave photon signal.
Example 2. A microwave photon signal frequency multiplication method and device with amplitude equalization effect, as shown in figures 2 and 3, uses injection locking phenomenon and light-light modulation effect in semiconductor laser to realize frequency multiplication and amplitude equalization of microwave photon signal.
The injection locking phenomenon is realized by setting the wavelength of the laser ASo that the N-order sidebands of the modulated light signal thereof fall into a wavelength of +>The injection locking region of the semiconductor laser of the (2) is amplified selectively, so that the injection locking frequency doubling phenomenon of microwave photon signals is realized; the optical-optical modulation function is to form an active annular filter by arranging a semiconductor laser, an optical delay line and an optical filter, and the frequency interval is caused by adjusting the optical delay lineThe optical frequency comb passes through the active annular filter with maximum efficiency, so that the amplitude balance of the N frequency multiplication microwave photon signals is realized; wavelength of the optical filter +.>The frequency multiplication and the amplitude equalization of the microwave photon signals are realized by utilizing the injection locking phenomenon and the optical-optical modulation effect in the semiconductor laser.
The device constructed by the microwave photon signal frequency multiplication method with the amplitude equalization effect comprises the following steps: the optical coupler comprises a light source and a modulation device 1, wherein the light source and the modulation device 1 are connected with an input end 3a of an optical coupler A3 through a polarization controller A2, an output end of the optical coupler A3 is connected with a port I4 a of an optical circulator 4, a port II 4B of the optical circulator 4 is connected with a semiconductor laser 5, a port III 4c of the optical circulator 4 is connected with an optical band pass filter 7 through an adjustable delay line 6, the optical band pass filter 7 is connected with an input end of an optical coupler B8, the optical coupler B8 also comprises an output port 8a and a signal output port 8B, the output port 8a of the optical coupler B8 is connected with a polarization controller B9, the polarization controller B9 is connected with an input end of an optical amplifier 10, and an output end of the optical amplifier 10 is connected with an input end 3B of the optical coupler A3; the semiconductor laser 5 is a distributed feedback laser or a Fabry-Perot F-P cavity semiconductor laser; the optical amplifier 10 is an erbium-doped fiber amplifier, a semiconductor optical amplifier, or a fiber raman amplifier.
The light source and modulation device 1 is of a direct modulation type structure and comprises a laser B1d and a radio frequency source B1e, wherein the output end of the radio frequency source B1e is connected with the radio frequency input end of the laser B1 d; the laser B1d is a wavelength tunable semiconductor direct modulation laser.
Working principle: the laser B1d generates a wavelength ofIs emitted by the RF source 1c at a frequency offIs provided. The output terminal of the semiconductor direct modulation laser 1d is connected to one terminal of the polarization controller A2. The procedure is as in example 1.
Claims (5)
1. A microwave photon signal frequency multiplication method with an amplitude equalization effect is characterized in that: the method utilizes the injection locking phenomenon and the photo-optical modulation effect in the semiconductor laser to realize the frequency multiplication and the amplitude balance of the microwave photon signal; the injection locking phenomenon is realized by setting the wavelength of the laser Aλ 1 So that the N-order sidebands of the modulated light signal thereof fall into the wavelengthλ 2 In the injection locking region of the semiconductor laser, the N-order sidebands are selectively amplified, so that the injection locking frequency doubling phenomenon of microwave photon signals is realized; the optical-optical modulation function is that an active annular filter is formed by arranging a semiconductor laser, an optical delay line and an optical filter, and the amplitude balance of an N frequency multiplication microwave photon signal is realized by adjusting the optical delay line to enable an optical frequency comb with frequency interval to pass through the active annular filter at maximum efficiency; wavelength of the optical filterλ 3 ≠λ 1 ≠λ 2 The frequency multiplication and the amplitude equalization of the microwave photon signals are realized by utilizing the injection locking phenomenon and the optical-optical modulation effect in the semiconductor laser.
2. The device constructed by the microwave photon signal frequency multiplication method with the amplitude equalization effect as claimed in claim 1, wherein: the optical coupler comprises a light source and a modulation device (1), wherein the light source and the modulation device (1) are connected with a first input end (3 a) of an optical coupler A (3) through a polarization controller A (2), an output end of the optical coupler A (3) is connected with a first port (4 a) of an optical circulator (4), a second port (4B) of the optical circulator (4) is connected with a semiconductor laser (5), a third port (4 c) of the optical circulator (4) is connected with an optical band pass filter (7) through an adjustable delay line (6), the optical band pass filter (7) is connected with an input end of an optical coupler B (8), the optical coupler B (8) further comprises an output port (8 a) and a signal output port (8B), the output port (8 a) of the optical coupler B (8) is connected with a polarization controller B (9), the polarization controller B (9) is connected with an input end of an optical amplifier (10), and an output end of the optical amplifier (10) is connected with a second input end (3B) of the optical coupler A (3); the semiconductor laser (5) is a distributed feedback laser or a Fabry-Perot (F-P) cavity semiconductor laser; the optical amplifier (10) is an erbium-doped optical fiber amplifier, a semiconductor optical amplifier or an optical fiber Raman amplifier.
3. The apparatus according to claim 2, wherein: the light source and the modulation device (1) are of an indirect modulation type structure and comprise a laser A (1 a), wherein the laser A (1 a) is connected with the optical input end of a modulator (1 b), and the output end of a radio frequency source A (1 c) is connected with the radio frequency input end of the modulator (1 b); the laser A (1 a) is a wavelength tunable continuous light laser.
4. A device according to claim 3, characterized in that: the modulator (1 b) is an electro-optical modulator, which is a Mach-Zehnder modulator, a phase modulator or an electro-absorption modulator.
5. The apparatus according to claim 2, wherein: the light source and modulation device (1) is of a direct modulation type structure and comprises a laser B (1 d) and a radio frequency source B (1 e), wherein the output end of the radio frequency source B (1 e) is connected with the radio frequency input end of the laser B (1 d); the laser B (1 d) is a wavelength tunable semiconductor direct modulation laser.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201710900938.2A CN107508127B (en) | 2017-09-28 | 2017-09-28 | Microwave photon signal frequency multiplication method and device with amplitude equalization effect |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201710900938.2A CN107508127B (en) | 2017-09-28 | 2017-09-28 | Microwave photon signal frequency multiplication method and device with amplitude equalization effect |
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| CN107508127A CN107508127A (en) | 2017-12-22 |
| CN107508127B true CN107508127B (en) | 2024-03-22 |
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