CN107505973A - A kind of GaN chips TGA2216 SM adjustable reduction voltage circuit - Google Patents
A kind of GaN chips TGA2216 SM adjustable reduction voltage circuit Download PDFInfo
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- CN107505973A CN107505973A CN201710935121.9A CN201710935121A CN107505973A CN 107505973 A CN107505973 A CN 107505973A CN 201710935121 A CN201710935121 A CN 201710935121A CN 107505973 A CN107505973 A CN 107505973A
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- resistance
- operational amplifier
- tga2216
- resistor
- voltage circuit
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Control Of Electrical Variables (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
The invention discloses a kind of GaN chips TGA2216 SM adjustable reduction voltage circuit, including first resistor, second resistance, 3rd resistor, the 4th resistance, the 5th resistance, the 6th resistance and operational amplifier；First resistor one end is connected with chip electric leakage pressure side, the other end is connected with one end of second resistance and one end of the 4th resistance, the other end ground connection of second resistance, the other end of 4th resistance is connected with operational amplifier in-phase input end, 3rd resistor one end is connected with reference voltage end, the other end is connected with the inverting input of operational amplifier, 5th resistance one end is connected with the in-phase input end of operational amplifier, the other end is grounded, 6th resistance one end is connected with operational amplifier inverting input, the other end is connected with the output end of operational amplifier, the output end of operational amplifier is connected with chip positive gate voltage end.The present invention is simple by partial pressure and the relation of the leakage pressure and positive grid voltage that make the difference circuit realiration chip, circuit structure, it is easy to accomplish.
Description
Technical field
The present invention relates to a kind of GaN chips TGA2216-SM adjustable reduction voltage circuit, belong to technical field of micro communication.
Background technology
GaN chips TGA2216-SM is the power amplifier chips for 0.1~3GHz, and typical small-signal gain is 21dB, saturation
Power output is 40dBm.Electric leakage is fixed+40V in existing GaN chips TGA2216-SM power supply circuit, positive grid voltage for+
17.3V, minus gate voltage are -2.5V.As needed, volume use can drop in TGA2216-SM, that is, reduce electrical leakage voltage and be used for reducing output
Power uses.Decompression when reducing leakage pressure, can not change, but electric leakage+40V need to positive grid voltage in use, minus gate voltage be representative value
Independent control, separately power supply.
The content of the invention
Goal of the invention：Present invention aims at a kind of GaN chips TGA2216-SM adjustable reduction voltage circuit is provided, realize
Under TGA2216-SM drop volume service condition, drain voltage is powered simultaneously with positive grid voltage.
Technical scheme：To realize upper purpose, the present invention adopts the following technical scheme that：
A kind of GaN chips TGA2216-SM adjustable reduction voltage circuit, including first resistor, second resistance, 3rd resistor,
Four resistance, the 5th resistance, the 6th resistance and operational amplifier；Described first resistor one end and the leakage of the chip TGA2216-SM
Voltage end is connected, and the other end is connected with one end of the second resistance and one end of the 4th resistance respectively, second electricity
The other end ground connection of resistance, the other end of the 4th resistance are connected with the in-phase input end of the operational amplifier, and the described 3rd
Resistance one end is connected with reference voltage end, and the other end is connected with the inverting input of the operational amplifier, the 5th resistance
One end is connected with the in-phase input end of the operational amplifier, and other end ground connection, described 6th resistance one end is put with the computing
The inverting input of big device is connected, and the other end is connected with the output end of the operational amplifier, the output of the operational amplifier
End is connected with the positive gate voltage end of the chip TGA2216-SM.
Preferably, the 3rd resistor, the 4th resistance, the resistance of the 5th resistance and the 6th resistance are equal.
Preferably, the drain voltage that the voltage between the first resistor and second resistance is the chip TGA2216-SM
Half.
Preferably, the first resistor, second resistance, 3rd resistor, the 4th resistance, the 5th resistance and the 6th resistance
Resistance is kilo-ohm level resistance.
Preferably, the operational amplifier uses model AD820AR chip.
Preferably, the resistance of the first resistor is 12K Ω, the resistance of second resistance is 100K Ω, 3rd resistor,
The resistance of four resistance, the 5th resistance and the 6th resistance is 6.8K.
Preferably, the reference voltage is 2.7V.
Preferably, the operational amplifier use+20V high voltage supplies.
Beneficial effect：The present invention is by bleeder circuit and makes the difference discharge circuit and realizes GaN chips TGA2216-SM leakage
The relation for pressing VD to meet with positive grid voltage VG magnitudes of voltage, is carrying out drop volume in use, need to only change VD magnitude of voltage, VG as needed
Corresponding change can be made according to relational expression.Circuit structure is simple, it is easy to accomplish.
Brief description of the drawings
Fig. 1 is the circuit structure diagram of the embodiment of the present invention.
Fig. 2 is VD and VG graphs of a relation in the embodiment of the present invention.
Embodiment
With reference to specific embodiment, the present invention is furture elucidated.
As shown in figure 1, a kind of GaN chips TGA2216-SM adjustable reduction voltage circuit disclosed in the embodiment of the present invention, including
First resistor R1, second resistance R2,3rd resistor R3, the 4th resistance R4, the 5th resistance R5, the 6th resistance R6 and operation amplifier
Device；R1 one end is connected with chip TGA2216-SM electric leakage pressure side (VD), the other end respectively with R2 one end and R4 one end phase
Even, R2 other end ground connection, the other end of R4 resistances are connected with the in-phase input end of operational amplifier, R3 one end and reference voltage end
(Vref) it is connected, the other end is connected with the inverting input of operational amplifier, the in-phase input end of R5 one end and operational amplifier
It is connected, other end ground connection, R6 one end is connected with the inverting input of operational amplifier, the output end of the other end and operational amplifier
It is connected, the output end of operational amplifier is connected with chip TGA2216-SM positive gate voltage end (VG).
The circuit of the present embodiment carries out electric resistance partial pressure by R1 and R2, obtains D/2, is then realized again by operational amplifier
Make difference operation, realize the relation VG=VD/2-Vref of GaN chips TGA2216-SM leakage pressure VD and positive grid voltage VG magnitudes of voltage, two
The relation line chart of person is as shown in Figure 2.
Cause influence of the change in resistance to circuit in view of resistance power consumption and reduction temperature change, resistance value selects thousand
Europe level, it is preferable that R1 resistances are that the resistance that 12K Ω, R2 resistance are 100K Ω, R3, R4, R5, R3 is 6.8K Ω, be disclosure satisfy that
Above-mentioned relation Formula V G=VD/2-Vref, Vref are fixed value 2.7V.Operational amplifier uses model AD820AR's in this example
Chip, using+20V high voltage supplies, so as to ensure VG output area.
Claims (8)
1. a kind of GaN chips TGA2216-SM adjustable reduction voltage circuit, it is characterised in that including first resistor, second resistance,
Three resistance, the 4th resistance, the 5th resistance, the 6th resistance and operational amplifier；Described first resistor one end and the chip
TGA2216-SM electric leakage pressure side is connected, the other end respectively with one end of the second resistance and one end phase of the 4th resistance
Even, the other end ground connection of the second resistance, the other end of the 4th resistance and the in-phase input end of the operational amplifier
It is connected, described 3rd resistor one end is connected with reference voltage end, and the other end is connected with the inverting input of the operational amplifier,
Described 5th resistance one end is connected with the in-phase input end of the operational amplifier, other end ground connection, described 6th resistance one end
It is connected with the inverting input of the operational amplifier, the other end is connected with the output end of the operational amplifier, the computing
The output end of amplifier is connected with the positive gate voltage end of the chip TGA2216-SM.
2. a kind of GaN chips TGA2216-SM according to claim 1 adjustable reduction voltage circuit, it is characterised in that described
3rd resistor, the 4th resistance, the resistance of the 5th resistance and the 6th resistance are equal.
3. a kind of GaN chips TGA2216-SM according to claim 1 adjustable reduction voltage circuit, it is characterised in that described
The half for the drain voltage that voltage between first resistor and second resistance is the chip TGA2216-SM.
4. a kind of GaN chips TGA2216-SM according to claim 1 adjustable reduction voltage circuit, it is characterised in that described
First resistor, second resistance, 3rd resistor, the 4th resistance, the resistance of the 5th resistance and the 6th resistance are kilo-ohm level resistance.
5. a kind of GaN chips TGA2216-SM according to claim 1 adjustable reduction voltage circuit, it is characterised in that described
Operational amplifier uses model AD820AR chip.
6. a kind of GaN chips TGA2216-SM according to claim 1 adjustable reduction voltage circuit, it is characterised in that described
The resistance of first resistor is 12K Ω, and the resistance of second resistance is 100K Ω, 3rd resistor, the 4th resistance, the 5th resistance and
The resistance of six resistance is 6.8K.
7. a kind of GaN chips TGA2216-SM according to claim 1 adjustable reduction voltage circuit, it is characterised in that described
Reference voltage is 2.7V.
8. a kind of GaN chips TGA2216-SM according to claim 1 adjustable reduction voltage circuit, it is characterised in that described
Operational amplifier use+20V high voltage supplies.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710935121.9A CN107505973A (en) | 2017-10-10 | 2017-10-10 | A kind of GaN chips TGA2216 SM adjustable reduction voltage circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710935121.9A CN107505973A (en) | 2017-10-10 | 2017-10-10 | A kind of GaN chips TGA2216 SM adjustable reduction voltage circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107505973A true CN107505973A (en) | 2017-12-22 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710935121.9A Pending CN107505973A (en) | 2017-10-10 | 2017-10-10 | A kind of GaN chips TGA2216 SM adjustable reduction voltage circuit |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101453196A (en) * | 2007-12-03 | 2009-06-10 | 联阳半导体股份有限公司 | Amplifier circuit |
| US20110109241A1 (en) * | 2009-11-09 | 2011-05-12 | Toshiba Lighting & Technology Corporation | Led lighting device and illuminating device |
| CN107171552A (en) * | 2017-06-30 | 2017-09-15 | 苏州华徕光电仪器有限公司 | Serial regulating circuit |
| CN207264237U (en) * | 2017-10-10 | 2018-04-20 | 南京冉思电子科技有限公司 | A kind of adjustable reduction voltage circuit of GaN chips TGA2216 SM |
-
2017
- 2017-10-10 CN CN201710935121.9A patent/CN107505973A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101453196A (en) * | 2007-12-03 | 2009-06-10 | 联阳半导体股份有限公司 | Amplifier circuit |
| US20110109241A1 (en) * | 2009-11-09 | 2011-05-12 | Toshiba Lighting & Technology Corporation | Led lighting device and illuminating device |
| CN107171552A (en) * | 2017-06-30 | 2017-09-15 | 苏州华徕光电仪器有限公司 | Serial regulating circuit |
| CN207264237U (en) * | 2017-10-10 | 2018-04-20 | 南京冉思电子科技有限公司 | A kind of adjustable reduction voltage circuit of GaN chips TGA2216 SM |
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| PB01 | Publication | ||
| PB01 | Publication | ||
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| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20171222 |
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| RJ01 | Rejection of invention patent application after publication |