CN107505600A - Multifunction chip circuit - Google Patents
Multifunction chip circuit Download PDFInfo
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- CN107505600A CN107505600A CN201710912954.3A CN201710912954A CN107505600A CN 107505600 A CN107505600 A CN 107505600A CN 201710912954 A CN201710912954 A CN 201710912954A CN 107505600 A CN107505600 A CN 107505600A
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- sp3t switch
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- noise amplifier
- sp3t2
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- 230000010363 phase shift Effects 0.000 claims abstract description 9
- 238000005516 engineering process Methods 0.000 description 14
- 238000010586 diagram Methods 0.000 description 6
- 238000013461 design Methods 0.000 description 5
- 238000011161 development Methods 0.000 description 4
- 230000003321 amplification Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000003199 nucleic acid amplification method Methods 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000001429 stepping effect Effects 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/02—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S13/00
Abstract
The present invention relates to technical field of integrated circuits, a kind of more particularly to multifunction chip circuit, including SP3T switch SP3T1, low-noise amplifier LNA1,6 attenuators, 6 bit phase shifters, low-noise amplifier LNA2, the SP3T switch SP3T2 being sequentially connected in series, control the selection of SP3T switch SP3T1 and SP3T switch SP3T2 one, three branch road break-makes respectively by decoding circuit, the second branch road of SP3T switch connects 50 Ω resistance to ground simultaneously, and controls each decay and jayrator by 6 TTL digital driver circuitries respectively.Signal is amplified, phase shift, attenuation function and digital control section have been integrated in same chip, by once being fabricated on same wafer, show small volume, it is in light weight, produce low cost and other advantages in enormous quantities.
Description
Technical field
The present invention relates to technical field of integrated circuits, more particularly to a kind of multifunction chip circuit.
Background technology
Phased-array radar is a kind of advanced radar system, the research work of technique since the 1930s U.S.
Make, until the mid-50 is just succeeded in developing by Hughes Aircraft Company of the U.S..Into after the sixties, with microelectric technique,
The appearance of computer technology and modern control theory, the development of phased array technology enter the stage of rapid development.Arrive
The eighties, phased-array radar by it is many unique the characteristics of, obtained further application, become in the third generation, be long-range anti-
One important symbol of air-to-air missile (AAM) system.Into 21 century, phased array technology has become the main flow of Radar Technology development,
Compared to traditional mechanical scanning radar, phased-array radar, which has, can do with more multiple target, function, mobility strong, beam position spirit
It is living, the reaction time is short, data transfer rate is high, strong antijamming capability, high to the adaptable of complex target environment, reliability etc. excellent
Point.
The antenna array of phased-array radar is made up of, number of unit many individual receiving units and transmitter unit (T/R components)
Related to the function of radar, typically from hundreds of to tens of thousands of, quantity, size and the performance of these units are to phased-array radar
Cost, volume and performance play conclusive effect.These units arrange in the plane regularly, forming array antenna.
It is concerned with principle using electromagnetic wave, passes through computer control feedback toward the phase of each transmitter unit signal, it is possible to change the side of wave beam
To being scanned, therefore referred to as electric scanning.The echo-signal received is sent into main frame by receiving unit, completes radar and target is searched
Rope, tracking and measurement.Each unit is in addition to having antenna oscillator, the also necessary device such as amplifier, attenuator, phase shifter
Part.Different oscillators can be fed into the signal of different phases by phase shifter, so as to go out different directions in space radiation
Wave beam.Number of unit is more, then wave beam is more in the possible orientation in space.The working foundation of this radar is that phase is controllable
Array antenna, " phased array " thus gains the name.
The emphasis and difficult point of phased-array radar design are T/R components.At present industry T/R components design and manufacture it is usual
Using hybrid integrated technology, i.e., by microwave assembly technology by tens of money single function microwave chip (amplifier, switch, attenuator, shiftings
The chips such as phase device, driver) it is integrated in one piece of circuit board or microwave cavity, although this technology comparative maturity, it is solid
The shortcomings that having, seriously constrains the development of phased array technology.The inherent defect of this technology includes the following aspects：
1st, volume is big.A traditional T/R component needs to use tens of money chips, substantial amounts of microstrip transmission line, chip to carry
Version, capacitance resistance, metal separate space etc., its volume be difficult can do it is small, it is contemplated that phased-array radar includes thousands of individual T/R groups
Part, can be very huge using the phased-array radar volume and weight of traditional T/R component technologys, and this can have a strong impact on the portable of equipment
Property and ease of use.
2nd, cost is high.As it was noted above, traditional T/R component technologys need substantial amounts of microwave chip and microwave device, firmly
Part cost is sufficiently expensive, along with manual debugging and the cost of assembling, the cost of a traditional T/R component 8,000 RMB with
On, even if a phased-array radar only containing 1,000 transceiver channels, it is used merely to purchase the expense of T/R components just 800
It is more than ten thousand RMB.
3rd, uniformity is poor.Phased-array radar has very strict requirement to the consistency of performance of each T/R components.
The performance indications such as microwave and millimeter wave frequency range, the amplitudes of traditional T/R components, phase, phase shifting accuracy, attenuation accuracy are by chip cascade gold
Silk, length of transmission line, the influence of micro-group dress assembly technology are serious, and the uniformity of performance is poor, has a strong impact on phased-array radar
Performance.
4th, substantial amounts of debugging efforts are needed.It is difficult full because the consistency of performance of traditional T/R components is very poor, after the completion of assembling
The coherence request of sufficient phased array system, so needing component design commissioning engineer to carry out substantial amounts of debugging work to T/R components
Make, it is necessary to take a substantial amount of time and energy, to have a strong impact on the production efficiency of phased-array radar.
The content of the invention
It is an object of the invention to overcome the shortcomings of above-mentioned technology, and a kind of multifunction chip circuit is provided, reduced phased
Volume, weight, the cost of battle array radar system, improve the performance and production efficiency of phased-array radar.
The present invention to achieve the above object, using following technical scheme：
A kind of multifunction chip circuit, it is characterised in that：Including SP3T switch SP3T1, low-noise amplifier LNA1,
6 attenuator AT, 6 bit phase shifter PH, low-noise amplifier LNA2, SP3T switch SP3T2, the SP3T switch
SP3T1, low-noise amplifier LNA1,6 attenuator AT, 6 bit phase shifter PH, low-noise amplifier LNA2, SP3T switch
SP3T2 is sequentially connected in series, and controls one, the three of SP3T switch SP3T1 and SP3T switch SP3T2 respectively by decoding circuit
The selection of branch road break-make, while the second branch road of SP3T switch connects 50 Ω resistance to ground, is arranged to load condition, 6 digits
Control attenuator AT uses resistor-type network structure, and 6 bit phase shifter PH use high low-pass network phase-shift structure, and pass through 6 respectively
TTL digital driver circuitries control each decay and jayrator.
The beneficial effects of the invention are as follows:Signal is amplified, phase shift, attenuation function and digital control section be integrated in it is same
In chip, by once being fabricated on same wafer, show small volume, it is in light weight, produce in enormous quantities cost it is low, simultaneously
Have that parasitic parameter is small, stability is good, high reliability concurrently, can be widely used in military and civilian field；
The difficult integrated difficulty of digital circuit in microwave circuit is overcome, is effectively integrated in multiple TTL digit drivers together
In one chip, and then phase shifter and attenuator in drive circuit.So that the control port of phase shifter and attenuator is reduced,
The complexity of outside control interconnection is reduced, adds the practicality of circuit；
The SP3T switch exported using digital decoder control input, effectively by six of SP3T switch
Control port is reduced to 2, adds the usability of circuit；
The control level that attenuator and phase shifter section -5/0V level to 5/0V are realized by TTL digit drivers turns
Change, and half is reduced into control signal port, so as to reduce the complexity of chip layout design difficulty and peripheral control circuits.
Brief description of the drawings
Fig. 1 is the structural representation of the present invention；
Fig. 2 is the detailed circuit structural representation of the present invention；
Fig. 3 tradition SP3T switch structural representations；
Fig. 46 attenuator structure schematic diagrames of tradition；
Fig. 56 bit phase shifter structural representations of tradition；
Fig. 6 introduces decoding circuit SP3T switch structural representation；
Fig. 7 introduces TTL drive circuit numerical-control attenuator structural representations；
Fig. 8 introduces TTL drive circuit digital phase shifter structural representations；
The TTL integral unit circuits that Fig. 9 decays and phase shifter is quoted；
Figure 10 TTL element circuits.
Embodiment
Below in conjunction with the accompanying drawings and preferred embodiment describes the embodiment of the present invention in detail.It is a kind of more as shown in Figure 1
Functional chip circuit, be made up of 8 parts, SP3T switch SP3T1, low-noise amplifier LNA1,6 attenuator AT, 6
The amplification, phase shift, attenuation function of signal are integrated in by phase shifter PH, low-noise amplifier LNA2, SP3T switch SP3T2
In same chip；Digital control part includes multiple TTL digit drivers and digital decoder, realizes attenuator and phase shifter
Partly -5/0V level effectively reduces the control port quantity of signal to 5/0V control level conversion.Detailed circuit structure
Schematic diagram is as shown in Figure 2.
The SP3T switch SP3T1 of radio frequency branch road, 6 numerical-control attenuators, 6 digit controls move subtraction device and SP3T is opened
Pass SP3T2 is required for the work by controlling level control circuit.Wherein, SP3T switch will realize the break-make of three branch roads
, it is necessary to draw 6 control ports, change -5/0V level carries out switch on and off control, traditional structure schematic diagram such as Fig. 3 institutes for control
Show；6 numerical-control attenuators realize the control of 0.5dB decay steppings, it is necessary to which 10 control terminals, change -5/0V level carry out different
Attenuation controls, and traditional structure schematic diagram is as shown in Figure 4；6 digital phase shifters realize the control of 50625 ° of phase shift steppings, it is necessary to
12 control terminals, -5/0V level of switching control port realize that different amount of phase shift control, and traditional structure schematic diagram is as shown in Figure 5.
However, it is necessary to multifunction chip need simultaneously realize signal branch switching, amplification, decay and phase shift, it is necessary to functional block compared with
More, the control port brought is more, and needs -5/0V Automatic level controls, and which increase chip layout design difficulty to also increase
The complexity of peripheral control circuits is, it is necessary to the introducing of digital circuit.On the one hand control port quantity is reduced, on the one hand by -5/0V
Negative voltage control be changed into 5/0V over-pressure control.The present invention uses E/D GaAs pseudomorphic high electron mobility transistors
(PHEMT) technique makes microwave and drive circuit, and digital control and the amplification of signal, phase shift, attenuation function have been integrated in together
In one chip, -5/0V vacuum cavitations are being changed into 5/0V just by the control of wherein SP3T switch by digital decoder
Voltage-controlled system, control port number are reduced to 2 ports, and circuit diagram is as shown in Figure 6.
Meanwhile 6 numerical-control attenuators and 6 digit controls move subtraction device and control each decay and shifting by TTL digit drivers
Phase, 10 control terminals of 6 numerical-control attenuators being reduced to 6,6 digit controls move 12 control terminals of subtraction device and are reduced to 6,
Each control bit is controlled by 5/0N positive voltage, specifically changes nearly structural circuit figure as shown in FIG. 7 and 8.
TTL element circuits mainly utilize two complementary reverser structures, single-ended I N inputs, complementary OUT+ and OUT-
Voltage control level output, on the one hand effectively reduces the port number of final output, to realize attenuator and phase shifter
Each control；On the other hand, conversion of the vacuum cavitations to over-pressure control is realized, is by 0V or 5V mono signal level conversion
The anti-phase control level that a pair of level values are -5V and 0V, so as to reduce the complexity of peripheral control circuits.Fig. 9 and Figure 10 points
The TTL integral units circuit and TTL element circuits that Shuai Jian do not quoted with phase shifter.
Described above is only the preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
For member, under the premise without departing from the principles of the invention, some improvements and modifications can also be made, these improvements and modifications also should
It is considered as protection scope of the present invention.
Claims (1)
- A kind of 1. multifunction chip circuit, it is characterised in that：Including SP3T switch SP3T1, low-noise amplifier LNA1,6 Position attenuator AT, 6 bit phase shifter PH, low-noise amplifier LNA2, SP3T switch SP3T2, the SP3T switch SP3T1, low-noise amplifier LNA1,6 attenuator AT, 6 bit phase shifter PH, low-noise amplifier LNA2, SP3T switch SP3T2 is sequentially connected in series, and controls one, the three of SP3T switch SP3T1 and SP3T switch SP3T2 respectively by decoding circuit The selection of branch road break-make, while the second branch road of SP3T switch connects 50 Ω resistance to ground, is arranged to load condition, 6 digits Control attenuator AT uses resistor-type network structure, and 6 bit phase shifter PH use high low-pass network phase-shift structure, and pass through 6 respectively TTL digital driver circuitries control each decay and jayrator.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710912954.3A CN107505600A (en) | 2017-09-30 | 2017-09-30 | Multifunction chip circuit |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710912954.3A CN107505600A (en) | 2017-09-30 | 2017-09-30 | Multifunction chip circuit |
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| CN201710912954.3A Pending CN107505600A (en) | 2017-09-30 | 2017-09-30 | Multifunction chip circuit |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111123208A (en) * | 2019-12-27 | 2020-05-08 | 中国电子科技集团公司第十三研究所 | Multichannel amplitude and phase control chip |
| CN112532559A (en) * | 2020-10-15 | 2021-03-19 | 北京无线电测量研究所 | Numerical control amplitude-phase multifunctional chip and method for transmitting signals in chip |
| CN113541718A (en) * | 2021-06-15 | 2021-10-22 | 中国电子科技集团公司第十三研究所 | Four-channel multifunctional chip |
| CN117081523A (en) * | 2023-10-18 | 2023-11-17 | 四川益丰电子科技有限公司 | Broadband attenuation low-noise amplification multifunctional chip |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104597429A (en) * | 2015-01-22 | 2015-05-06 | 成都锦江电子系统工程有限公司 | Multi-working-mode receiving and transmitting assembly |
| CN105676188A (en) * | 2016-04-01 | 2016-06-15 | 中国电子科技集团公司第三十八研究所 | High-integration transmit-receive assembly based on multifunctional chip architecture |
| CN105866747A (en) * | 2016-05-11 | 2016-08-17 | 中国电子科技集团公司第三十八研究所 | Active phased array radar transmit-receive component and manufacturing method thereof |
| CN207099069U (en) * | 2017-08-31 | 2018-03-13 | 天津中科海高微波技术有限公司 | Multifunction chip circuit |
-
2017
- 2017-09-30 CN CN201710912954.3A patent/CN107505600A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104597429A (en) * | 2015-01-22 | 2015-05-06 | 成都锦江电子系统工程有限公司 | Multi-working-mode receiving and transmitting assembly |
| CN105676188A (en) * | 2016-04-01 | 2016-06-15 | 中国电子科技集团公司第三十八研究所 | High-integration transmit-receive assembly based on multifunctional chip architecture |
| CN105866747A (en) * | 2016-05-11 | 2016-08-17 | 中国电子科技集团公司第三十八研究所 | Active phased array radar transmit-receive component and manufacturing method thereof |
| CN207099069U (en) * | 2017-08-31 | 2018-03-13 | 天津中科海高微波技术有限公司 | Multifunction chip circuit |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111123208A (en) * | 2019-12-27 | 2020-05-08 | 中国电子科技集团公司第十三研究所 | Multichannel amplitude and phase control chip |
| CN112532559A (en) * | 2020-10-15 | 2021-03-19 | 北京无线电测量研究所 | Numerical control amplitude-phase multifunctional chip and method for transmitting signals in chip |
| CN113541718A (en) * | 2021-06-15 | 2021-10-22 | 中国电子科技集团公司第十三研究所 | Four-channel multifunctional chip |
| CN113541718B (en) * | 2021-06-15 | 2022-09-13 | 中国电子科技集团公司第十三研究所 | Four-channel multifunctional chip |
| CN117081523A (en) * | 2023-10-18 | 2023-11-17 | 四川益丰电子科技有限公司 | Broadband attenuation low-noise amplification multifunctional chip |
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Application publication date: 20171222 |
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