CN107483841A - The programmable pixel array effectively identified based on multiple target - Google Patents
The programmable pixel array effectively identified based on multiple target Download PDFInfo
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- CN107483841A CN107483841A CN201710685836.3A CN201710685836A CN107483841A CN 107483841 A CN107483841 A CN 107483841A CN 201710685836 A CN201710685836 A CN 201710685836A CN 107483841 A CN107483841 A CN 107483841A
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/70—Circuitry for compensating brightness variation in the scene
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/70—Circuitry for compensating brightness variation in the scene
- H04N23/71—Circuitry for evaluating the brightness variation
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/74—Circuitry for scanning or addressing the pixel array
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- Transforming Light Signals Into Electric Signals (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
The present invention relates to Semiconductor Physics theory, device design, to propose a kind of programmable pixel array, realizes different imaging modes according to the change of detection environment, effectively identifies specific objective and event in the visual field while reduce system power dissipation.The present invention, the programmable pixel array effectively identified based on multiple target, 1,2 shared structure of sub-pixel unit include floating-point reset transistor RFD1 2, floating-point FD1 2, source follower SF1 2, line EAC SEL1 2；Unshared structure includes photodiode PD1, PD2, diode reset pipe RPD1, RPD2, transmits grid TX1, TX2, storage diode SD1, storage diode reset transistor RSD1, transmits grid TG1, diode PD1, PD2, SD1 are connected with respective reset transistor respectively.Present invention is mainly applied to the design and manufacture occasion of programmable pixel array.
Description
Technical field
The present invention relates to Semiconductor Physics theory, device design and analogue layout field, specifically, it is related to base
In the programmable pixel array that multiple target effectively identifies.
Background technology
As imaging demand of the imaging sensor in resolution ratio, dynamic range, frame frequency etc. improves constantly, based on " frame "
The imaging sensor of working method needs to produce great amount of images information to meet the requirement of high-resolution, high frame frequency.It can so increase
Add the power consumption of imaging system, reduce the endurance and maneuverability of application system, improve to transmission bandwidth and information processing energy
The requirement of power.Effective identification when the performance indications that imaging sensor is fixed simultaneously can not meet to detect scene changes to object,
Image quality is caused to decline.
The content of the invention
For overcome the deficiencies in the prior art, the present invention is directed to propose a kind of programmable pixel array, according to detection environment
Different imaging modes is realized in change, is effectively identified specific objective and event in the visual field while is reduced system power dissipation.The present invention
The technical scheme of use is the programmable pixel array effectively identified based on multiple target, 1,2 shared structure bag of sub-pixel unit
The RFD1-2 of reset transistor containing floating-point, floating-point FD1-2, source follower SF1-2, line EAC SEL1-2；Unshared structure includes photoelectricity two
Pole pipe PD1, PD2, diode reset pipe RPD1, RPD2 transmit grid TX1, TX2, storage diode SD1, and storage diode resets
Pipe RSD1, grid TG1 is transmitted, diode PD1, PD2, SD1 are connected with respective reset transistor respectively, and floating-point reset transistor RFD1-2 is with floating
Point FD1-2 is connected；Through transmitting in grid TX1 deposit diodes SD1, the electric charge being stored in afterwards in SD1 is transferred to electric charge through TG1 in PD1
FD1-2；Electric charge is directly transferred to FD1-2 through TX2 in PD2, and electric charge is stored in FD1-2 through source follower SF1-2 and line EAC SEL1-
2 are passed on column bus, and column bus are connected with the input of reading circuit, and the switch in pel array is controlled according to light-intensity conditions,
The switching of the cumulative and traditional non-cumulative mode of operation of second order charge is completed, realizes the mesh with detection environmental change adjustment imaging mode
's.
Under poor light condition, pel array is worked using roller Exposure mode, PD1 pairs in initial time sub-pixel unit 1
Certain point exposes, and produces optical charge Q1；PD2 in subsequent time pixel cell 2 is exposed to same point produces optical charge Q2,
Q simultaneously1It is transferred to by transmitting grid TX1 in SD1；Grid TG1 and TX2 is transmitted afterwards to open Q simultaneously1And Q2It is transferred to FD1-2,
Electric charge second order in pixel is completed to add up；Under intense light conditions, PD1 is constantly in reset state, SD1 and PD2 respectively as pixel list
The photosensitive part of member 1,2 is exposed to obtain optical charge Q to target1、Q2, the unlatching of stage TG1 is read by Q1It is transferred to FD1-2 readings
Go out, floating-point FD1-2 is completed to reset afterwards, and TX2 is opened Q2Transfer is read, and the non-cumulative formula exposure for completing pel array is read.
Arrive to control the row selects signal of pel array according to accident is whether there is, adjustment window selects exit pattern to read, changes pixel
The output situation of cell signal, obtains the image of different resolution.When zero accident event is detected, sensor is using equidistant
Jump performs jump interlacing exposing operation every the mode of excessively some rows, then selects output time after one-row pixels complete exposure
Interval, jump is performed every row read operation in a manner of several columns are crossed by equally equidistant jump, realizes hop interval exposure-reading
Go out；Quick seizure image object feature is needed when detecting accident and occurring, is selected by re-starting window to pel array,
Realize and the high frame frequency of high-resolution of target object is detected, obtain most useful information, new window selects mode to select exposure to open
The address to begin with end line, and selection read the address of starting column and end column, are changed according to the motion conditions of target object
Become window size and the position in pel array plane that exposure is read.
The features of the present invention and beneficial effect are：
Realized by the Programmable Design of pixel cell structure and pel array window lectotype different under different detection scenes
Imaging mode, enable the sensor to effectively detect specific objective and reduce system power dissipation.
Brief description of the drawings：
Fig. 1 four pipe dot structures of tradition.
Fig. 2 programmable pixel structure charts.
Pixel cell timing diagram under Fig. 3 second order charge accumulation modes.
Fig. 4 is according to the different window lectotype figure of event arriving situation.
Embodiment
The design realizes tradition inside pixel using the shared structure read of each two sub-pixel unit by switching control
The switching of non-accumulation mode and second order charge accumulation mode, meet the imaging requirements of different detection scenes.Simultaneously using programmable
Window selects playback mode to realize effective identification to specific objective.
Conventional pixel cell structure is as shown in figure 1, include light sensitive diode PD, transmission grid TX, floating-point reset transistor RFD, floating
Point FD, source follower SF and line EAC SEL.Starting stage, reset transistor RFD resetted to FD；The photosensitive generation optical charge of diode
Through transmitting grid TX storages to floating-point FD, floating-point voltage is set to produce change；Line EAC SEL is opened, the magnitude of voltage after floating-point change
Through source follower SF Buffer outputs to column bus.Pixel output signal is weaker under the conditions of micro light detecting, easily by noise jamming, drop
Low image quality.Programmable pixel array is designed based on this problem, the scheme shared using dot structure makes electric charge in pixel
Portion completes second order and added up, and improves level output signal during low-light level imaging, improves image quality.The shared concrete scheme of structure is such as
Shown in Fig. 2,1,2 shared structure of sub-pixel unit include floating-point reset transistor RFD1-2, floating-point FD1-2, source follower SF1-2,
Line EAC SEL1-2；Unshared structure includes photodiode PD1, PD2, diode reset pipe RPD1, RPD2, transmission grid TX1,
TX2, storage diode SD1, storage diode reset transistor RSD1, transmission grid TG1.Diode PD1, PD2, SD1 respectively with each
Reset transistor be connected, floating-point reset transistor RFD1-2 is connected with floating-point FD1-2；Electric charge is through transmitting grid TX1 deposit diodes in PD1
In SD1, the electric charge in SD1 is transferred to FD1-2 through TG1 afterwards；Electric charge in PD2 is directly transferred to FD1-2 through TX2.Stored in FD1-2
Electric charge is passed on column bus through source follower SF1-2 and line EAC SEL1-2, and column bus are connected with the input of reading circuit.Root
The switch in pel array is controlled according to light-intensity conditions, completes the switching of the cumulative and traditional non-cumulative mode of operation of second order charge, it is real
Now with the purpose of detection environmental change adjustment imaging mode.
Specifically, programmable pixel structure is as shown in Figure 2 under second order charge accumulation mode.Between sub-pixel unit 1,2 altogether
Enjoy structure and include floating-point reset transistor RFD1-2, floating-point FD1-2, source follower SF1-2, line EAC SEL1-2, unshared structure bag
PD1 containing photodiode, PD2, diode reset pipe RPD1, RPD2, transmit grid TX1, TX2, storage diode SD1, storage two
Pole pipe reset transistor RSD1, transmission grid TG1.Under poor light condition, pel array is worked using roller Exposure mode, the work respectively switched
Sequential is as shown in Figure 3.PD1 in initial time sub-pixel unit 1 exposes to certain point, obtains optical charge Q1；Subsequent time picture
PD2 in plain unit 2 exposes to same point produces optical charge Q2, while the Q in PD11It is transferred to by transmitting grid TX1 in SD1；
Grid TG1 and TX2 is transmitted afterwards to open Q simultaneously1And Q2FD1-2 is transferred to, electric charge second order in pixel is completed and adds up.Intense light conditions
Under, PD1 is constantly in reset state, SD1 and PD2 and target is exposed respectively as the photosensitive part of pixel cell 1,2
To optical charge Q1、Q2, the unlatching of stage TG1 is read by Q1FD1-2 readings are transferred to, floating-point FD1-2 is completed to reset afterwards, and TX2 is opened
By Q2Transfer is read, and the non-cumulative formula exposure for completing pel array is read.
Pel array is as shown in Figure 4 according to whetheing there is accident come interim different window and selecting exit pattern to read.When foreign affairs unintentionally
When part is detected, sensor performs jump interlacing exposing operation using equidistantly jumping by the way of excessively some rows, then one
Row pixel selects output time interval after completing exposure, and jump is performed in a manner of several columns are crossed by equally equidistant jump reads every row
Go out operation, it is possible to achieve hop interval exposure-reading.This exposure-playback mode is equivalent to the spatial sampling for reducing picture
Rate, rebuild the image of a low resolution.The information content of image is reduced compared with full frame mode, but because is only obtained necessary
Pixel Information give up unnecessary information, so improve obtain necessary information speed, reduce sensing system power consumption.
Quick seizure image object feature is needed when detecting accident and occurring, is selected by re-starting window to pel array, it is real
Now the high frame frequency of high-resolution of target object is detected, obtains most useful information.New window selects mode to select exposure to start
The address of row and end line, and selection read the address of starting column and end column, can be changed according to the motion conditions of target object
Become window size and the position in pel array plane that exposure is read.It so effectively can accurately realize specific objective
High frame frequency detection.
According to the different adjustment imaging modes of detection scene, worked under poor light condition using pixel second order accumulation mode, by force
Using the non-accumulation mode work of tradition under optical condition.Low resolution figure is obtained every row reading using interlacing when arriving without event
Picture, detects when accident occurs and reading is exposed to specific objective, effectively identifies target and reduces overall power.
When zero accident event is detected, sensor performs jump interlacing using equidistantly jumping by the way of excessively some rows
Exposing operation, output time interval then is selected after one-row pixels complete exposure, with equally equidistant jump every crossing several columns
Mode performs jump every row read operation, realizes hop interval exposure-reading；Needed when detecting accident and occurring quick
Image object feature is caught, is selected by re-starting window to pel array, realizes and the high frame frequency of high-resolution of target object is visited
Survey, obtain most useful information, new window selects mode to select to expose the address of starting row and end line, and selection reading is opened
Begin to arrange the address with end column, changed according to the motion conditions of target object and expose the window size read and put down in pel array
Position on face.
Claims (3)
1. a kind of programmable pixel array effectively identified based on multiple target, it is characterized in that, 1,2 shared structure of sub-pixel unit
Include floating-point reset transistor RFD1-2, floating-point FD1-2, source follower SF1-2, line EAC SEL1-2；Unshared structure includes photoelectricity
Diode PD1, PD2, diode reset pipe RPD1, RPD2, grid TX1, TX2 are transmitted, storage diode SD1, storage diode is multiple
Position pipe RSD1, transmits grid TG1, and diode PD1, PD2, SD1 be connected with respective reset transistor respectively, floating-point reset transistor RFD1-2 with
Floating-point FD1-2 is connected；Through transmitting in grid TX1 deposit diodes SD1, the electric charge being stored in afterwards in SD1 turns electric charge through TG1 in PD1
Enter FD1-2；Electric charge is directly transferred to FD1-2 through TX2 in PD2, and electric charge is stored in FD1-2 through source follower SF1-2 and line EAC
SEL1-2 is passed on column bus, and column bus are connected with the input of reading circuit, is controlled according to light-intensity conditions in pel array
Switch, the switching of the cumulative and traditional non-cumulative mode of operation of second order charge is completed, realized with detection environmental change adjustment imaging side
The purpose of formula.
2. the programmable pixel array effectively identified based on multiple target as claimed in claim 1, it is characterized in that, poor light condition
Under, pel array is worked using roller Exposure mode, and the PD1 in initial time sub-pixel unit 1 exposes to certain point, produces light
Charge Q1；PD2 in subsequent time pixel cell 2 is exposed to same point produces optical charge Q2, while Q1By transmitting grid
TX1 is transferred in SD1；Grid TG1 and TX2 is transmitted afterwards to open Q simultaneously1And Q2FD1-2 is transferred to, completes electric charge two in pixel
Rank is added up；Under intense light conditions, it is right respectively as the photosensitive part of pixel cell 1,2 that PD1 is constantly in reset state, SD1 and PD2
Target is exposed to obtain optical charge Q1、Q2, the unlatching of stage TG1 is read by Q1FD1-2 readings are transferred to, floating-point FD1-2 is complete afterwards
Into reset, TX2 is opened Q2Transfer is read, and the non-cumulative formula exposure for completing pel array is read.
3. the programmable pixel array effectively identified based on multiple target as claimed in claim 1, it is characterized in that, according to having unintentionally
Outer event arrives to control the row selects signal of pel array, and adjustment window selects exit pattern to read, changes the output situation of pixel cell signal,
Obtain the image of different resolution.When zero accident event is detected, sensor is used and equidistantly jumped every the side of excessively some rows
Formula performs jump interlacing exposing operation, then selects output time interval after one-row pixels complete exposure, is jumped with equally equidistant
Jump and perform jump every row read operation every the mode for crossing several columns, realize hop interval exposure-reading；When detecting accident
Quick seizure image object feature is needed during generation, is selected by re-starting window to pel array, realizes the height to target object
High resolution frame frequency detects, and obtains most useful information, and new window selects mode to select to expose the address of starting row and end line,
And selection reads the address of starting column and end column, change the window size of exposure reading according to the motion conditions of target object
With the position in pel array plane.
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| CN201710685836.3A CN107483841A (en) | 2017-08-11 | 2017-08-11 | The programmable pixel array effectively identified based on multiple target |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113965705A (en) * | 2021-11-04 | 2022-01-21 | 地太科特电子制造(北京)有限公司 | CMOS pixel addressing module and method |
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| CN101371564A (en) * | 2006-01-13 | 2009-02-18 | 美光科技公司 | Method and apparatus providing pixel storage gate charge sensing for electronic stabilization in imagers |
| CN102801930A (en) * | 2012-07-13 | 2012-11-28 | 天津大学 | Low-power-consumption time delay integral type CMOS (Complementary Metal-Oxide-Semiconductor Transistor) image sensor |
| CN103024309A (en) * | 2012-12-29 | 2013-04-03 | 天津大学 | CMOS (complementary metal oxide semiconductor) image sensor for quick acquisition of single low-order accumulative images |
| CN105592265A (en) * | 2015-12-18 | 2016-05-18 | 广东欧珀移动通信有限公司 | Pixel-switching method of image sensor, photographing device, and terminal |
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2017
- 2017-08-11 CN CN201710685836.3A patent/CN107483841A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101371564A (en) * | 2006-01-13 | 2009-02-18 | 美光科技公司 | Method and apparatus providing pixel storage gate charge sensing for electronic stabilization in imagers |
| CN102801930A (en) * | 2012-07-13 | 2012-11-28 | 天津大学 | Low-power-consumption time delay integral type CMOS (Complementary Metal-Oxide-Semiconductor Transistor) image sensor |
| CN103024309A (en) * | 2012-12-29 | 2013-04-03 | 天津大学 | CMOS (complementary metal oxide semiconductor) image sensor for quick acquisition of single low-order accumulative images |
| CN105592265A (en) * | 2015-12-18 | 2016-05-18 | 广东欧珀移动通信有限公司 | Pixel-switching method of image sensor, photographing device, and terminal |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113965705A (en) * | 2021-11-04 | 2022-01-21 | 地太科特电子制造(北京)有限公司 | CMOS pixel addressing module and method |
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