CN107471032A - The thin-skinned burnishing device of any chamfering of chip and operating method - Google Patents
The thin-skinned burnishing device of any chamfering of chip and operating method Download PDFInfo
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- CN107471032A CN107471032A CN201710641975.6A CN201710641975A CN107471032A CN 107471032 A CN107471032 A CN 107471032A CN 201710641975 A CN201710641975 A CN 201710641975A CN 107471032 A CN107471032 A CN 107471032A
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- 238000011017 operating method Methods 0.000 title description 3
- 238000005498 polishing Methods 0.000 claims abstract description 129
- 238000000034 method Methods 0.000 claims description 16
- 239000003082 abrasive agent Substances 0.000 claims description 11
- 239000003960 organic solvent Substances 0.000 claims description 9
- 239000004094 surface-active agent Substances 0.000 claims description 9
- 150000002191 fatty alcohols Chemical class 0.000 claims description 7
- 229940051841 polyoxyethylene ether Drugs 0.000 claims description 7
- 229920000056 polyoxyethylene ether Polymers 0.000 claims description 7
- 239000004519 grease Substances 0.000 claims description 6
- 239000012188 paraffin wax Substances 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 4
- 239000002245 particle Substances 0.000 claims description 4
- 239000002994 raw material Substances 0.000 claims description 4
- PMZURENOXWZQFD-UHFFFAOYSA-L Sodium Sulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=O PMZURENOXWZQFD-UHFFFAOYSA-L 0.000 claims description 3
- 235000014121 butter Nutrition 0.000 claims description 3
- 239000008367 deionised water Substances 0.000 claims description 3
- 229910021641 deionized water Inorganic materials 0.000 claims description 3
- 239000010432 diamond Substances 0.000 claims description 3
- 229910003460 diamond Inorganic materials 0.000 claims description 3
- 239000003350 kerosene Substances 0.000 claims description 3
- 229910052938 sodium sulfate Inorganic materials 0.000 claims description 3
- 235000011152 sodium sulphate Nutrition 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 229910052580 B4C Inorganic materials 0.000 claims description 2
- QXNVGIXVLWOKEQ-UHFFFAOYSA-N Disodium Chemical compound [Na][Na] QXNVGIXVLWOKEQ-UHFFFAOYSA-N 0.000 claims description 2
- BFNBIHQBYMNNAN-UHFFFAOYSA-N ammonium sulfate Chemical compound N.N.OS(O)(=O)=O BFNBIHQBYMNNAN-UHFFFAOYSA-N 0.000 claims description 2
- 229910052921 ammonium sulfate Inorganic materials 0.000 claims description 2
- 235000011130 ammonium sulphate Nutrition 0.000 claims description 2
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 2
- 239000010431 corundum Substances 0.000 claims description 2
- 229910052593 corundum Inorganic materials 0.000 claims description 2
- 239000010687 lubricating oil Substances 0.000 claims description 2
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 2
- 238000013461 design Methods 0.000 abstract description 5
- 238000012545 processing Methods 0.000 abstract description 4
- 238000010586 diagram Methods 0.000 description 5
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 239000003921 oil Substances 0.000 description 3
- 230000003746 surface roughness Effects 0.000 description 3
- 238000001514 detection method Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000012876 topography Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B9/00—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor
- B24B9/02—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground
- B24B9/06—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain
- B24B9/065—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain of thin, brittle parts, e.g. semiconductors, wafers
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
- B24B37/105—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping the workpieces or work carriers being actively moved by a drive, e.g. in a combined rotary and translatory movement
- B24B37/107—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping the workpieces or work carriers being actively moved by a drive, e.g. in a combined rotary and translatory movement in a rotary movement only, about an axis being stationary during lapping
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
- B24B37/30—Work carriers for single side lapping of plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/34—Accessories
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Organic Chemistry (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
本发明公开了一种晶片任意倒角面软抛光装置，它包括：抛光盘(12)，与抛光盘(12)相连的旋转轴(13)，与旋转轴(13)相连的第二电机(14)，抛光刷(11)，与抛光刷(11)相连的第一电机(10)，第一电机(10)固定在电机支架(9)上，电机支架(9)固定在水平转臂(7)上，水平转臂(7)与滑架(4)相连，滑架(4)通过内衬套(3)套在螺杆(2)上，螺杆(2)的外周设有衬套筒(5)，衬套筒(5)固定在支撑座(1)上。本发明结构设计合理，通过旋转的抛光刷对晶片进行粗抛光、精抛光加工，达到其倒角面抛光的目的，加工效率高，抛光后晶片的倒角面均匀性好，且可对倒角的任意面进行精确抛光。
The invention discloses a soft polishing device for any chamfered surface of a wafer, which comprises: a polishing disk (12), a rotating shaft (13) connected with the polishing disk (12), and a second motor connected with the rotating shaft (13). 14), polishing brush (11), the first motor (10) that links to each other with polishing brush (11), the first motor (10) is fixed on the motor support (9), and motor support (9) is fixed on the horizontal rotating arm ( 7), the horizontal arm (7) is connected with the carriage (4), the carriage (4) is sleeved on the screw (2) through the inner bushing (3), and the outer periphery of the screw (2) is provided with a bushing ( 5), the bushing sleeve (5) is fixed on the support seat (1). The invention has a reasonable structural design. The wafer is roughly polished and finely polished by a rotating polishing brush to achieve the purpose of polishing the chamfered surface. The processing efficiency is high. Any surface can be precisely polished.
Description
技术领域technical field
本发明涉及光电子晶体材料倒角面镜面抛光的装置及操作方法，具体涉及一种晶片任意倒角面软抛光装置和操作方法方法。The invention relates to a device and an operating method for mirror-polishing a chamfered surface of an optoelectronic crystal material, in particular to a soft-polishing device and an operating method for an arbitrary chamfered surface of a wafer.
背景技术Background technique
为了避免晶片的崩边，通常在晶片抛光前对其进行倒角，并对倒角进行抛光。现有的晶片倒角设备主要是磨削设备，在对晶片倒角面进行抛光时主要靠手工操作，抛光角度难以控制，误差较大，抛光后倒角面均匀性一致性较差，加工效率低，成本高。In order to avoid chipping of the wafer, it is usually chamfered before the wafer is polished, and the chamfer is polished. The existing wafer chamfering equipment is mainly grinding equipment, which mainly relies on manual operation when polishing the wafer chamfering surface, the polishing angle is difficult to control, the error is large, the uniformity of the chamfering surface after polishing is poor, and the processing efficiency Low, high cost.
因此，很有必要在现有技术的基础上，设计一种结构设计合理，操作简便，易于对晶片倒角面进行抛光，工作效率高的晶片倒角面抛光装置。Therefore, it is very necessary to design a wafer chamfer surface polishing device with reasonable structure design, easy operation, easy polishing of the wafer chamfer surface and high work efficiency on the basis of the prior art.
发明内容Contents of the invention
发明目的：本发明的目的是为了克服现有技术的不足。提供一种结构设计合理，操作简便，易于对晶片倒角面进行抛光，工作效率高的晶片倒角面抛光装置及其操作方法。Purpose of the invention: the purpose of the present invention is in order to overcome the deficiencies in the prior art. Provided is a wafer chamfer surface polishing device with reasonable structure design, simple operation, easy polishing of the wafer chamfer surface, and high work efficiency and an operation method thereof.
技术方案：为了实现以上目的，本发明所采用的主要技术方案为：Technical scheme: in order to realize above object, the main technical scheme that the present invention adopts is:
一种晶片任意倒角面软抛光装置，它包括：抛光盘，与抛光盘相连的旋转轴，与旋转轴相连的第二电机，抛光刷，与抛光刷相连的第一电机，第一电机通过螺钉固定在电机支架上，电机支架通过内六角螺栓固定在水平转臂上，水平转臂与滑架相连，滑架通过内衬套套在螺杆上，螺杆的外周设有衬套筒，衬套筒固定在支撑座上；A soft polishing device for any chamfered surface of a wafer, which includes: a polishing disc, a rotating shaft connected to the polishing disc, a second motor connected to the rotating shaft, a polishing brush, a first motor connected to the polishing brush, and the first motor passing through The screws are fixed on the motor bracket, and the motor bracket is fixed on the horizontal rotating arm through the inner hexagonal bolt. The horizontal rotating arm is connected with the carriage. fixed on the support base;
所述的抛光盘包括相互啮合连接的内齿轮、外齿轮和游星轮，所述的游星轮上开设有孔，承载盘通过螺钉固定安装在游星轮上，晶片通过石蜡均匀粘贴在承载盘上；The polishing disc includes an internal gear, an external gear and a star wheel that are meshed with each other. The star wheel is provided with a hole, and the carrier plate is fixed and installed on the star wheel by screws, and the wafer is evenly pasted on the carrier by paraffin wax. on the plate;
所述抛光装置的螺杆的顶部安装有固定盖板；A fixed cover is installed on the top of the screw rod of the polishing device;
所述抛光刷位于抛光盘的上方，抛光刷包括刷炳、与刷炳相连的刷头和安装在刷头上的刷毛。The polishing brush is located above the polishing disc, and the polishing brush includes a brush base, a brush head connected with the brush base and bristles installed on the brush head.
本发明所述的晶片任意倒角面软抛光装置的操作方法，其包括以下步骤：The operation method of the wafer random chamfer surface soft polishing device of the present invention, it comprises the following steps:
a、先将研磨后的晶片通过石蜡均匀粘贴在承载盘上，再将承载盘通过螺钉安装在游星轮上，将抛光刷安装在第一电机上；a. Firstly paste the ground wafer evenly on the carrying plate with paraffin, then install the carrying plate on the star wheel through screws, and install the polishing brush on the first motor;
b、转动水平转臂，将抛光刷转动到抛光盘上表面，通过调整滑架的位置调整抛光刷与抛光盘的距离；然后将配制好的5微米磨料的抛光膏均匀涂敷在晶片和抛光刷上，开动第二电机，抛光盘内齿轮和外齿轮由旋转轴带动，然后带动游星轮转动，安装在游星轮中的承载盘随着游星轮的转动而转动，从而带动粘贴在承载盘上的晶片转动，安装在第一电机上的抛光刷在开动第一电机时，随第一电机的转动而转动，从而使得抛光刷与晶片作相对运动，对晶片进行粗抛光。b. Turn the horizontal arm, turn the polishing brush to the upper surface of the polishing disc, and adjust the distance between the polishing brush and the polishing disc by adjusting the position of the carriage; then apply the prepared 5-micron abrasive polishing paste evenly on the wafer and polishing Brush on, start the second motor, the internal gear and the external gear of the polishing disc are driven by the rotating shaft, and then drive the star wheel to rotate, and the bearing plate installed in the star wheel rotates with the rotation of the star wheel, thereby driving the paste on the The wafer on the carrier disk rotates, and the polishing brush installed on the first motor rotates with the rotation of the first motor when the first motor is turned on, so that the polishing brush and the wafer move relatively, and the wafer is roughly polished.
c、粗抛光结束后，用去离子水冲洗晶片表面和抛光盘，清洗掉晶片和抛光盘上的磨料，更换抛光刷，改用100纳米磨料的抛光膏均匀涂敷在晶片和抛光刷上，然后按照步骤b相同的操作方式进行精抛光；c, after the rough polishing, rinse the wafer surface and the polishing disc with deionized water, clean the abrasives on the wafer and the polishing disc, replace the polishing brush, and use the polishing paste of 100 nanometer abrasives to evenly coat the wafer and the polishing brush, Then carry out fine polishing according to the same operation mode of step b;
d、精抛光结束后，关闭第一电机和第二电机，卸下承载盘，从承载盘上取下抛光好的晶片。d. After finishing polishing, turn off the first motor and the second motor, unload the carrying plate, and remove the polished wafer from the carrying plate.
作为优选方案，以上所述的晶片任意倒角面软抛光装置的操作方法，步骤b中，控制第一电机的相对转速为40至80rpm，对晶片进行粗抛光。As a preferred solution, in the above-mentioned operation method of the soft polishing device for any chamfered surface of the wafer, in step b, the relative rotational speed of the first motor is controlled to be 40 to 80 rpm, and the wafer is roughly polished.
作为优选方案，以上所述的晶片任意倒角面软抛光装置的操作方法，步骤c中，控制第一电机和第二电机的相对转速为100至150rpm。As a preferred solution, in the above-mentioned operation method of the soft polishing device for any chamfered surface of the wafer, in step c, the relative rotational speed of the first motor and the second motor is controlled to be 100 to 150 rpm.
作为优选方案，以上所述的晶片任意倒角面软抛光装置的操作方法，步骤b和步骤c中，所述的抛光膏包括磨料，表面活性剂，油脂和有机溶剂。As a preferred solution, in the above-mentioned operation method of the soft polishing device for any chamfered surface of a wafer, in step b and step c, the polishing paste includes abrasives, surfactants, grease and organic solvents.
作为更加优选方案，以上所述的晶片任意倒角面软抛光装置的操作方法，步骤b和步骤c中，所述的抛光膏由下列质量百分比的原料组成，磨料的质量百分比为：20％～70％，有机溶剂的质量百分比为：20％～50％，表面活性剂的质量百分比为：0.5％～5％，油脂的质量百分比为：0.5％～5％。As a more preferred solution, in the operation method of the soft polishing device for any chamfered surface of the wafer described above, in step b and step c, the polishing paste is composed of the following raw materials in mass percentage, and the mass percentage of abrasive is: 20%～ 70%, the mass percentage of the organic solvent is: 20%-50%, the mass percentage of the surfactant is: 0.5%-5%, and the mass percentage of the oil is: 0.5%-5%.
作为特别优选的技术方案，经过大量实验筛选得到，所述的抛光膏由下列质量百分比的原料组成，磨料的质量百分比为：50％，有机溶剂的质量百分比为：46％，表面活性剂的质量百分比为：2％，油脂的质量百分比为：2％。，其中步骤b磨料的粒径为5微米，步骤c磨料的粒径为100纳米。As a particularly preferred technical solution, obtained through a large number of experimental screenings, the described polishing paste is composed of the following mass percentages of raw materials, the mass percentage of the abrasive is: 50%, the mass percentage of the organic solvent is: 46%, the mass percentage of the surfactant The percentage is: 2%, and the mass percentage of oil is: 2%. , wherein the particle size of the abrasive in step b is 5 microns, and the particle size of the abrasive in step c is 100 nm.
作为优选方案，以上所述的晶片任意倒角面软抛光装置的操作方法，磨料为人造金刚石微分、碳化硅、棕刚玉、立方碳化硼、氧化铈中的一种或它们的混合物；As a preferred solution, in the operation method of the soft polishing device for any chamfered surface of the wafer described above, the abrasive material is one of artificial diamond differential, silicon carbide, brown corundum, cubic boron carbide, and cerium oxide, or a mixture thereof;
表面活性剂为脂肪醇聚氧乙烯醚硫酸钠、脂肪醇聚氧乙烯醚硫酸铵、脂肪醇聚氧乙烯醚磺基琥珀酸单酯二钠中的一种或任意两种的混合物；The surfactant is one of fatty alcohol polyoxyethylene ether sodium sulfate, fatty alcohol polyoxyethylene ether ammonium sulfate, fatty alcohol polyoxyethylene ether sulfosuccinic monoester disodium or a mixture of any two;
油脂为黄油或润滑油中的一种；有机溶剂为煤油或汽油中的一种。The grease is one of butter or lubricating oil; the organic solvent is one of kerosene or gasoline.
有益效果：本发明和现有技术相比具有以下优点：Beneficial effect: compared with the prior art, the present invention has the following advantages:
本发明提供的晶片任意倒角面软抛光装置，结构设计合理，使用灵活，加工效率高，抛光后晶片的倒角面均匀性好，且可对倒角的任意面进行精确抛光。The soft polishing device for any chamfered surface of a wafer provided by the invention has reasonable structural design, flexible use, high processing efficiency, good uniformity of the chamfered surface of the wafer after polishing, and can accurately polish any chamfered surface.
本发明将经过优选的抛光膏涂敷在经倒角的晶片和抛光刷上，通过旋转的抛光刷对晶片进行粗抛光、精抛光加工，从而可实现对任意倒角面进行精准抛光的目的，可克服现有技术抛光角度不易控制，误差大，加工效率低等缺点。In the present invention, the optimized polishing paste is coated on the chamfered wafer and the polishing brush, and the wafer is roughly polished and finely polished by the rotating polishing brush, so that any chamfered surface can be precisely polished. It can overcome the shortcomings of the prior art that the polishing angle is not easy to control, the error is large, and the processing efficiency is low.
附图说明Description of drawings
图1是本发明所述的晶片任意倒角面软抛光装置的结构示意图。Fig. 1 is a structural schematic diagram of a soft polishing device for any chamfered surface of a wafer according to the present invention.
图2为本发明抛光刷的结构示意图。Fig. 2 is a schematic structural view of the polishing brush of the present invention.
图3是本发明抛光盘的结果示意图。Figure 3 is a schematic diagram of the results of the polishing disk of the present invention.
图4是本发明贴有晶片后的抛光盘的结果示意图。Fig. 4 is a schematic diagram of the result of the polishing disk after the wafer is attached according to the present invention.
图5是图4抛光盘截面的的结构示意图。FIG. 5 is a schematic structural view of the section of the polishing disk in FIG. 4 .
图6是晶片倒角面抛光后的原子力显微镜(AFM)检测结果的表面粗糙度分析图。Fig. 6 is a surface roughness analysis diagram of the atomic force microscope (AFM) detection result after the chamfered surface of the wafer is polished.
图7是晶片倒角面抛光后的原子力显微镜(AFM)检测结果的三维形貌分析图。Fig. 7 is a three-dimensional topography analysis diagram of the atomic force microscope (AFM) detection result after the chamfered surface of the wafer is polished.
具体实施方式detailed description
下面结合附图和具体实施例，进一步阐明本发明，应理解这些实施例仅用于说明本发明而不用于限制本发明的范围，在阅读了本发明之后，本领域技术人员对本发明的各种等价形式的修改均落于本申请所附权利要求所限定的范围。Below in conjunction with accompanying drawing and specific embodiment, further illustrate the present invention, should be understood that these embodiments are only for illustrating the present invention and are not intended to limit the scope of the present invention, after having read the present invention, those skilled in the art will understand various aspects of the present invention Modifications in equivalent forms all fall within the scope defined by the appended claims of this application.
实施例1Example 1
如图1至图5所示，一种晶片任意倒角面软抛光装置，它包括：抛光盘12，与抛光盘12相连的旋转轴13，与旋转轴13相连的第二电机14，抛光刷11，与抛光刷11相连的第一电机10，第一电机10通过螺钉固定在电机支架9上，电机支架9通过内六角螺栓8固定在水平转臂7上，水平转臂7与滑架4相连，滑架4通过内衬套3套在螺杆2上，螺杆2的外周设有衬套筒5，衬套筒5固定在支撑座1上；As shown in Fig. 1 to Fig. 5, a kind of wafer random chamfer surface soft polishing device, it comprises: polishing disk 12, the rotating shaft 13 that links to each other with polishing disk 12, the second motor 14 that links to each other with rotating shaft 13, polishing brush 11. The first motor 10 connected to the polishing brush 11, the first motor 10 is fixed on the motor bracket 9 by screws, the motor bracket 9 is fixed on the horizontal arm 7 by the hexagon socket bolt 8, the horizontal arm 7 and the carriage 4 Connected, the carriage 4 is set on the screw 2 through the inner bush 3, the outer periphery of the screw 2 is provided with a bushing sleeve 5, and the bushing sleeve 5 is fixed on the support seat 1;
所述的抛光盘12包括相互啮合连接的内齿轮1202、外齿轮1203和游星轮1201，所述的游星轮1201上开设有孔，承载盘1204通过螺钉1206固定安装在游星轮1201上，晶片1205通过石蜡均匀粘贴在承载盘1204上；The polishing disc 12 includes an internal gear 1202, an external gear 1203 and a planetary wheel 1201 that are meshed with each other. The planetary wheel 1201 is provided with holes, and the carrier disc 1204 is fixedly mounted on the planetary wheel 1201 by screws 1206. , the wafer 1205 is evenly pasted on the carrier plate 1204 by paraffin;
所述抛光装置的螺杆2的顶部安装有固定盖板6；A fixed cover plate 6 is installed on the top of the screw rod 2 of the polishing device;
所述抛光刷11位于抛光盘12的上方，抛光刷11包括刷炳1101、与刷炳1101相连的刷头1102和安装在刷头1102上的刷毛1103。The polishing brush 11 is located above the polishing disc 12 , and the polishing brush 11 includes a brush head 1101 , a brush head 1102 connected to the brush head 1101 and bristles 1103 installed on the brush head 1102 .
实施例2晶片任意倒角面软抛光装置的操作方法，其包括以下步骤：Embodiment 2 The operation method of the soft polishing device for any chamfering surface of the wafer, which comprises the following steps:
如图1至5所示，a、先将研磨后的晶片1205通过石蜡均匀粘贴在承载盘1204上，再将承载盘1204通过螺钉1206安装在游星轮1201上，将抛光刷11安装在第一电机10上；As shown in Figures 1 to 5, a, the wafer 1205 after grinding is evenly pasted on the carrier plate 1204 by paraffin wax, and then the carrier plate 1204 is installed on the planetary wheel 1201 by screws 1206, and the polishing brush 11 is installed on the carrier plate 1201. On a motor 10;
b、转动水平转臂17，将抛光刷11转动到抛光盘12上表面，通过调整滑架4的位置调整抛光刷11与抛光盘12的距离；然后将配制好的5微米磨料的抛光膏均匀涂敷在晶片1205和抛光刷11上，开动第二电机14，抛光盘内齿轮1202和外齿轮1203通过由旋转轴13带动，然后带动游星轮1201转动，安装在游星轮1201中的承载盘1204随着游星轮1201的转动而转动，从而带动粘贴在承载盘1204上的晶片1205转动，安装在第一电机10上的抛光刷11在开动第一电机10时，随第一电机10的转动而转动，从而使得抛光刷11与晶片1205作相对运动，对晶片1205进行粗抛光。控制第一电机10和第二电机14的相对转速为80rpm，对晶片1205进行粗抛光。b, turn the horizontal arm 17, turn the polishing brush 11 to the upper surface of the polishing disc 12, adjust the distance between the polishing brush 11 and the polishing disc 12 by adjusting the position of the carriage 4; Coated on the wafer 1205 and the polishing brush 11, start the second motor 14, the internal gear 1202 and the external gear 1203 of the polishing disc are driven by the rotating shaft 13, and then drive the planetary wheel 1201 to rotate, and the bearings installed in the planetary wheel 1201 Disc 1204 rotates along with the rotation of planetary wheel 1201, thereby drives the wafer 1205 that is pasted on the carrier disc 1204 to rotate, and the polishing brush 11 that is installed on the first motor 10 when starting first motor 10, with the first motor 10 Rotate and rotate, so that the polishing brush 11 and the wafer 1205 move relatively, and the wafer 1205 is roughly polished. The relative rotational speed of the first motor 10 and the second motor 14 is controlled to be 80 rpm, and the wafer 1205 is roughly polished.
c、粗抛光结束后，用去离子水冲洗晶片1205表面和抛光盘12，清洗掉晶片1205和抛光盘12上的磨料，更换抛光刷11，改用100纳米磨料的抛光膏均匀涂敷在晶片1205和抛光刷11上，按照步骤b相同的操作方式进行精抛光；控制第一电机10和第二电机14的相对转速为120rpm。c, after the rough polishing finishes, rinse the wafer 1205 surface and the polishing disc 12 with deionized water, clean off the abrasives on the wafer 1205 and the polishing disc 12, replace the polishing brush 11, and use the polishing paste of 100 nanometer abrasives to evenly coat the wafer 1205 and the polishing brush 11, perform fine polishing in the same manner as in step b; control the relative rotational speed of the first motor 10 and the second motor 14 to 120 rpm.
d、精抛光结束后，关闭第一电机10和第二电机14，卸下承载盘1204，从承载盘1204上取下抛光好的晶片。d. After finishing polishing, turn off the first motor 10 and the second motor 14 , unload the carrying tray 1204 , and remove the polished wafer from the carrying tray 1204 .
以上所述的晶片任意倒角面软抛光装置的操作方法，步骤b和步骤c中，所述的抛光膏由下列质量百分比的原料组成，磨料的质量百分比为：50％，有机溶剂的质量百分比为：46％，表面活性剂的质量百分比为：2％，油脂的质量百分比为：2％。其中磨料为人造金刚石微分；表面活性剂为脂肪醇聚氧乙烯醚硫酸钠；油脂为黄油；有机溶剂为煤油。In the operation method of the soft polishing device for any chamfered surface of the wafer described above, in step b and step c, the polishing paste is composed of the following raw materials in mass percentage, the mass percentage of abrasive is: 50%, and the mass percentage of organic solvent For: 46%, the mass percentage of surfactant is: 2%, the mass percentage of grease is: 2%. The abrasive is artificial diamond; the surfactant is fatty alcohol polyoxyethylene ether sodium sulfate; the oil is butter; the organic solvent is kerosene.
性能检测：对抛光后的晶片倒角面进行检测，其性能为：表面粗糙度Ra<0.5nm。晶片倒角面抛光后的原子力显微镜(AFM)检测结果的表面粗糙度分析如图6所示，三维形貌分析如图7所示。Performance testing: The chamfered surface of the polished wafer is tested, and its performance is: surface roughness Ra<0.5nm. The surface roughness analysis of the atomic force microscope (AFM) test results after the wafer chamfer surface is polished is shown in FIG. 6 , and the three-dimensional topography analysis is shown in FIG. 7 .
以上所述仅是本发明的优选实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本发明原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本发明的保护范围。The above is only a preferred embodiment of the present invention, it should be pointed out that, for those of ordinary skill in the art, without departing from the principle of the present invention, some improvements and modifications can also be made, and these improvements and modifications can also be made. It should be regarded as the protection scope of the present invention.
Claims (7)
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108994670A (en) * | 2018-08-02 | 2018-12-14 | 叶庆国 | A kind of servo motor rotor Intelligent Machining System |
| CN110871399A (en) * | 2018-08-29 | 2020-03-10 | 东泰高科装备科技（北京）有限公司 | Touring star wheel and polishing method |
| CN113523948A (en) * | 2021-09-09 | 2021-10-22 | 江苏佳晟精密设备科技有限公司 | Automatic machining control method and equipment |
| CN114833715A (en) * | 2022-03-01 | 2022-08-02 | 浙江富芯微电子科技有限公司 | Silicon carbide wafer polishing device and method |
| CN116408713A (en) * | 2023-02-16 | 2023-07-11 | 江苏隆昌兴新材料科技有限公司 | A fully automatic polishing device for different components |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201579692U (en) * | 2009-12-30 | 2010-09-15 | 东南大学 | Electrochemical electrode polishing device |
| CN202964353U (en) * | 2012-12-05 | 2013-06-05 | 有研半导体材料股份有限公司 | Processing equipment for achieving silicon wafer back damage |
| CN103158054A (en) * | 2011-12-19 | 2013-06-19 | 张卫兴 | Two methods of achieving single-side polishing on double-side polishing machine |
| CN205166644U (en) * | 2015-11-30 | 2016-04-20 | 桐乡市凯瑞包装材料有限公司 | Adjustable steel sheet burnishing device |
| CN105538076A (en) * | 2016-02-05 | 2016-05-04 | 刘汝河 | Polishing paste for glass and glass polishing repair method |
| CN205520873U (en) * | 2016-01-20 | 2016-08-31 | 鹰潭市瑞源微型元件有限公司 | But microelement quick replacement brushes first burnishing machine |
| CN106826510A (en) * | 2016-12-30 | 2017-06-13 | 郑州晶润光电技术有限公司 | A kind of chip clears off technique |
-
2017
- 2017-07-31 CN CN201710641975.6A patent/CN107471032A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201579692U (en) * | 2009-12-30 | 2010-09-15 | 东南大学 | Electrochemical electrode polishing device |
| CN103158054A (en) * | 2011-12-19 | 2013-06-19 | 张卫兴 | Two methods of achieving single-side polishing on double-side polishing machine |
| CN202964353U (en) * | 2012-12-05 | 2013-06-05 | 有研半导体材料股份有限公司 | Processing equipment for achieving silicon wafer back damage |
| CN205166644U (en) * | 2015-11-30 | 2016-04-20 | 桐乡市凯瑞包装材料有限公司 | Adjustable steel sheet burnishing device |
| CN205520873U (en) * | 2016-01-20 | 2016-08-31 | 鹰潭市瑞源微型元件有限公司 | But microelement quick replacement brushes first burnishing machine |
| CN105538076A (en) * | 2016-02-05 | 2016-05-04 | 刘汝河 | Polishing paste for glass and glass polishing repair method |
| CN106826510A (en) * | 2016-12-30 | 2017-06-13 | 郑州晶润光电技术有限公司 | A kind of chip clears off technique |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108994670A (en) * | 2018-08-02 | 2018-12-14 | 叶庆国 | A kind of servo motor rotor Intelligent Machining System |
| CN108994670B (en) * | 2018-08-02 | 2020-08-11 | 湖南德晟智能科技有限公司 | Intelligent machining system for servo motor rotor |
| CN110871399A (en) * | 2018-08-29 | 2020-03-10 | 东泰高科装备科技（北京）有限公司 | Touring star wheel and polishing method |
| CN113523948A (en) * | 2021-09-09 | 2021-10-22 | 江苏佳晟精密设备科技有限公司 | Automatic machining control method and equipment |
| CN114833715A (en) * | 2022-03-01 | 2022-08-02 | 浙江富芯微电子科技有限公司 | Silicon carbide wafer polishing device and method |
| CN114833715B (en) * | 2022-03-01 | 2024-04-16 | 浙江富芯微电子科技有限公司 | Silicon carbide wafer polishing device and method |
| CN116408713A (en) * | 2023-02-16 | 2023-07-11 | 江苏隆昌兴新材料科技有限公司 | A fully automatic polishing device for different components |
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Application publication date: 20171215 |