CN107453597B - Flexible multi-level bridgeless power factor correction converter and modulation method - Google Patents

Flexible multi-level bridgeless power factor correction converter and modulation method Download PDF

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CN107453597B
CN107453597B CN201710796899.6A CN201710796899A CN107453597B CN 107453597 B CN107453597 B CN 107453597B CN 201710796899 A CN201710796899 A CN 201710796899A CN 107453597 B CN107453597 B CN 107453597B
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channel mosfet
switch tube
mosfet switch
tube
diode
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CN107453597A (en
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宫力
蒋云昊
丁稳房
席自强
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Hubei University of Technology
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/42—Circuits or arrangements for compensating for or adjusting power factor in converters or inverters
    • H02M1/4208—Arrangements for improving power factor of AC input
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/0048—Circuits or arrangements for reducing losses
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P80/00—Climate change mitigation technologies for sector-wide applications
    • Y02P80/10—Efficient use of energy, e.g. using compressed air or pressurized fluid as energy carrier

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  • Power Engineering (AREA)
  • Rectifiers (AREA)
  • Dc-Dc Converters (AREA)

Abstract

The invention relates to a flexible multi-level bridgeless power factor correction converter and a modulation method, wherein the converter comprises an alternating current inductance part, a power electronic switch network and a direct current capacitor part; diode D1The anode is connected to a switching tube S1Drain electrode, switching tube S1Source electrodeIs connected to a switching tube S2A drain electrode; diode D2The anode is connected to a switching tube S3Drain electrode, switching tube S3The source is connected to the switching tube S4A drain electrode; switch tube S5The source is connected to the switching tube S3A source electrode; switch tube S6The source is connected to the switching tube S1A source electrode; diode D1Cathode and diode D2The cathodes are connected; switch tube S2Source and switching tube S4The source electrodes are connected; switch tube S5Drain and switching tube S6The drains are connected. The inductance loss and the volume can be reduced, the on-state loss at low input voltage is reduced, the direct current capacitor is smaller, and the power density is higher; the switching between the five-level working state and the seven-level working state can be flexibly realized under the condition of not changing the circuit structure.

Description

Flexible multi-level bridgeless power factor correction converter and modulation method
Technical Field
The invention belongs to the technical field of low-state-loss bridgeless power factor correction converters for low input voltage and high output voltage, and particularly relates to a flexible multi-level bridgeless power factor correction converter and a modulation method.
Background
The input stage of the switching power supply usually adopts an uncontrollable capacitive rectifying circuit formed by diodes, but the input current waveform of the circuit contains a large amount of low-order harmonic components, the power factor of the circuit is very low, and the serious pollution is caused to a power grid. The power Factor correction technology, namely PFC (Power Factor correction), can control the input current waveform of the rectifier circuit to be as close to a sine wave as possible, thereby improving the power Factor of the converter. The active power factor correction formed by the fully-controlled power electronic switching device can meet the strictest current harmonic standard. Compared with passive power factor correction, the active power factor correction adopts high-frequency switch control, so that the volumes of passive filter elements such as an inductor and a capacitor in the active power factor correction are greatly reduced, and the passive power factor correction is very favorable for improving the power density of a converter. Currently, the application of active power factor correction technology is becoming more and more extensive.
A two-level Boost PFC circuit formed by a diode rectifier circuit and a Boost dc chopper circuit (Boost circuit) is the most mature and common. The circuit is easy to realize and has high reliability, but has two problems: 1) in a switching period, the voltage variation of the two ends of the inductor is output voltage, and when the amplitude of the output voltage is large, the high-frequency switch ripple of the inductor current is large; 2) the on-state loss of the diode bridge accounts for a large proportion (about 30-60%) of the total loss of the converter, and when the input voltage is low, the on-state loss of the diode bridge also greatly increases. The volume and loss of the inductor often account for most of the total volume and loss of the converter. When the output voltage of the switching power supply is high, the overlarge high-frequency current can generate serious electromagnetic interference (EMI) on one hand, and can cause the inductor to generate heat seriously on the other hand, so that the inductor, the EMI filter and the radiator which have larger volumes are required to be adopted, the volume of the converter is greatly increased, and the loss is increased. Therefore, the circuit is not suitable for being applied to the occasions of low-input-voltage and high-output-voltage switch power supplies.
In order to solve the above problems, the three-level PFC circuit proposed in chinese patent 201010138311.6 can reduce the inductor size by about 50% while keeping the switching frequency consistent with the maximum allowable inductor current ripple, but still has a diode rectifier bridge, and thus does not solve the problem of efficiency degradation at low input voltage. The single-inductor three-level bridgeless power factor correction converter proposed by the chinese invention patent 201010039662.1 has no diode rectifier bridge, and can improve the efficiency of the converter at low input voltage, but in a half cycle of the power voltage, a dc capacitor is always in a discharge state, so that a capacitor with larger capacity and volume must be adopted, which is not beneficial to improving the power density of the converter.
Disclosure of Invention
The invention aims to provide a flexible multi-level bridgeless power factor correction converter combining a bridgeless structure and a multi-level technology and a modulation method thereof, aiming at the defects of the technologies, and the converter has the advantages of small inductor volume, low on-state loss at low input voltage and small direct current capacitance, has higher power density, and is more suitable for switching power supplies with low input voltage and high output voltage.
In order to achieve the above purpose, the invention designs a flexible multi-level bridgeless power factor correction converter, which comprises an alternating current inductance part, a power electronic switch network and a direct current capacitance part.
The power electronic switch network comprises an N-channel MOSFET switch tube S1N-channel MOSFET switch tube S2N-channel MOSFET switch tube S3N-channel MOSFET switch tube S4N-channel MOSFET switch tube S5And N-channel MOSFET switch tube S6And a diode D1And a diode D2(ii) a Wherein, the diode D1Anode connected to N-channel MOSFET switch tube S1Drain, N-channel MOSFET switch tube S1Source connected to N-channel MOSFET switch tube S2Drain, N-channel MOSFET switch tube S2Source connected to N-channel MOSFET switch tube S4A source electrode; diode D2Anode connected to N-channel MOSFET switch tube S3Drain, N-channel MOSFET switch tube S3Source connected to N-channel MOSFET switch tube S4A drain electrode; diode D1Cathode connected to diode D2A cathode; n-channel MOSFET switch tube S5Source connected to N-channel MOSFET switch tube S3Source, N-channel MOSFET switch tube S5The drain electrode is connected to the midpoint of the direct current capacitor part; n-channel MOSFET switch tube S6Source connected to N-channel MOSFET switch tube S1Source, N-channel MOSFET switch tube S6The drain is connected to the midpoint of the DC capacitor portion.
The DC capacitor part comprises two capacitors C connected in series1And a capacitor C2(ii) a Wherein, the capacitor C1Is connected to the diode D2Cathode of (2), capacitor C1Is connected to the capacitor C2Positive electrode, N channel MOSFET switch tube S5Drain and N-channel MOSFET switch tube S6A contact of the drain electrode; capacitor C2Is connected to the N-channel MOSFET switching tube S2Source and N-channel MOSFET switch tube S4The source contact.
The AC inductor part comprises an inductor L1And an inductance L2(ii) a Wherein, the inductance L1One end of which is connected to an N-channel MOSFET switching tube S1Drain electrode and diode D1Contact of anode, inductance L1Is connected to one end of the input, and the other end of the input is connected to the inductor L2And one terminal of the inductor L2Is connected to the N-channel MOSFET switch tube S3Drain electrode and diode D2Contact point of anode, and inductance L1Inductance of and inductance L2The inductance values of the two inductors are equal.
A modulation method of the flexible multi-level bridgeless pfc converter as described above, the modulation method comprising:
when the capacitance C1Capacitor C2Voltage is satisfied
Figure GDA0002273143840000031
Under the condition of (3), the converter is in a five-level working state;
when the capacitance C1Capacitor C2Voltage is satisfied
Figure GDA0002273143840000032
The converter is in a seven-level operating state.
Further, when
Figure GDA0002273143840000033
Controlling N-channel MOSFET switch tube S1Normally-on, N-channel MOSFET switch tube S3N-channel MOSFET switch tube S4N-channel MOSFET switch tube S5N-channel MOSFET switch tube S6Normally off, N-channel MOSFET switch tube S2Alternately switching on and off according to a PWM rule;
when in use
Figure GDA0002273143840000034
Controlling N-channel MOSFET switch tube S1N-channel MOSFET switch tube S2N-channel MOSFET switch tube S3N-channel MOSFET switch tube S4N-channel MOSFET switch tube S6Normally off, N-channel MOSFET switch tube S5Alternately switching on and off according to a PWM rule;
when in use
Figure GDA0002273143840000035
Controlling N-channel MOSFET switch tube S3Normally-on, N-channel MOSFET switch tube S1N-channel MOSFET switch tube S2N-channel MOSFET switch tube S5N-channel MOSFET switch tube S6Normally off, N-channel MOSFET switch tube S4Alternately switching on and off according to a PWM rule;
when in use
Figure GDA0002273143840000041
Controlling N-channel MOSFET switch tube S1N-channel MOSFET switch tube S2N-channel MOSFET switch tube S3N-channel MOSFET switch tube S4N-channel MOSFET switch tube S5Normally off, N-channel MOSFET switch tube S6And alternately switching on and off according to a PWM rule.
Further, when
Figure GDA0002273143840000042
Controlling N-channel MOSFET switch tube S1Normally-on, N-channel MOSFET switch tube S3N-channel MOSFET switch tube S4N-channel MOSFET switch tube S5N-channel MOSFET switch tube S6Normally-off N-channel MOSFET switch tube S2Alternately switching on and off according to a PWM rule;
when in use
Figure GDA0002273143840000043
Controlling N-channel MOSFET switch tube S2N-channel MOSFET switch tube S3N-channel MOSFET switch tube S4N-channel MOSFET switch tube S6Normally-off N-channel MOSFET switch tube S1N-channel MOSFET switch tube S5Alternately switched on and off according to PWM rule and N-channel MOSFET switching tube S1And N-channel MOSFETSwitch tube S5The gate drive waveforms of (a) are complementary;
when in use
Figure GDA0002273143840000044
Controlling N-channel MOSFET switch tube S1N-channel MOSFET switch tube S2N-channel MOSFET switch tube S3N-channel MOSFET switch tube S4N-channel MOSFET switch tube S6Normally-off N-channel MOSFET switch tube S5Alternately switching on and off according to a PWM rule;
when in use
Figure GDA0002273143840000045
Controlling N-channel MOSFET switch tube S3Normally-on, N-channel MOSFET switch tube S1N-channel MOSFET switch tube S2N-channel MOSFET switch tube S5N-channel MOSFET switch tube S6Normally-off N-channel MOSFET switch tube S4Alternately switching on and off according to a PWM rule;
when in use
Figure GDA0002273143840000046
Controlling N-channel MOSFET switch tube S1N-channel MOSFET switch tube S2N-channel MOSFET switch tube S4N-channel MOSFET switch tube S5Normally-off N-channel MOSFET switch tube S3N-channel MOSFET switch tube S6Alternately switched on and off according to PWM rule and N-channel MOSFET switching tube S3And N-channel MOSFET switch tube S6The gate drive waveforms of (a) are complementary;
when in use
Figure GDA0002273143840000047
Controlling N-channel MOSFET switch tube S1N-channel MOSFET switch tube S2N-channel MOSFET switch tube S3N-channel MOSFET switch tube S4N-channel MOSFET switch tube S5Normally-off N-channel MOSFET switch tube S6And alternately switching on and off according to a PWM rule.
Compared with the prior art, the invention has the following advantages:
1. compared with the common two-level bridgeless Boost PFC circuit, the power factor correction converter and the modulation method can reduce the volume of the inductor by about 50 percent (five-level state) or 67 percent (seven-level state) on the premise of keeping the switching frequency consistent with the maximum allowable inductor current ripple; or on the premise of keeping the output power, the switching frequency and the inductor volume consistent, the amplitude of the high-frequency ripple current of the inductor is reduced by about 50 percent (five-level state) or 67 percent (seven-level state), the heat generated by the inductor is greatly reduced, and the efficiency of the converter is improved.
2. The power factor correction converter and the modulation method can reduce the on-state loss of the converter at low input voltage.
3. The power factor correction converter and the modulation method can realize the charge and discharge control of the two capacitors within the time of at most one quarter of a power supply voltage period, and compared with a single-inductor three-level bridgeless power factor correction converter, the direct-current capacitor is smaller.
4. The power factor correction converter and the modulation method can conveniently realize the mutual switching between two working states of five levels and seven levels without changing the circuit structure, only changing the distribution relation of two series capacitor voltages and the generation mode of six switching tube control signals.
Drawings
FIG. 1 is a circuit diagram of a flexible multilevel bridgeless PFC converter according to the present invention;
FIGS. 2a to 2h are circuit diagrams of the converter according to the present invention in each operation mode within one cycle of the power supply voltage;
FIG. 3 is a schematic diagram of the division of the operating region of the converter of the present invention in a five-level operating state;
FIG. 4 is a schematic diagram of the division of the operating region of the converter of the present invention in a seven-level operating state;
FIGS. 5 a-5 d are schematic diagrams of the modulation method and main waveforms of the converter in the five-level operating state according to the present invention;
fig. 6a to 6f are diagrams of the modulation method and main waveforms of the converter in the seven-level operating state according to the present invention.
The components in the figures are numbered as follows:
an alternating current inductance part 110, a power electronic switching network 120, and a direct current capacitance part 130.
Detailed Description
The invention is described in further detail below with reference to the figures and the specific embodiments.
As shown in fig. 1, the flexible multi-level bridgeless pfc converter includes an ac inductance portion 110, a power electronic switching network 120, and a dc capacitance portion 130.
The power electronic switching network 120 includes an N-channel MOSFET switching transistor S1N-channel MOSFET switch tube S2N-channel MOSFET switch tube S3N-channel MOSFET switch tube S4N-channel MOSFET switch tube S5And N-channel MOSFET switch tube S6And a diode D1And a diode D2(ii) a Wherein, the diode D1Anode connected to N-channel MOSFET switch tube S1Drain, N-channel MOSFET switch tube S1Source connected to N-channel MOSFET switch tube S2Drain, N-channel MOSFET switch tube S2Source connected to N-channel MOSFET switch tube S4A source electrode; diode D2Anode connected to N-channel MOSFET switch tube S3Drain, N-channel MOSFET switch tube S3Source connected to N-channel MOSFET switch tube S4A drain electrode; diode D1Cathode connected to diode D2A cathode; n-channel MOSFET switch tube S5Source connected to N-channel MOSFET switch tube S3Source, N-channel MOSFET switch tube S5The drain is connected to the midpoint of the dc capacitor portion 130; n-channel MOSFET switch tube S6Source connected to N-channel MOSFET switch tube S1Source, N-channel MOSFET switch tube S6The drain is connected to the midpoint of the dc capacitor portion 130.
The DC capacitor part 130 includes two capacitors C connected in series1And a capacitor C2(ii) a Wherein, the capacitor C1Is connected to the diode D2Cathode of (2), capacitor C1Is connected to the capacitor C2A positive electrode,N-channel MOSFET switch tube S5Drain and N-channel MOSFET switch tube S6A contact of the drain electrode; capacitor C2Is connected to the N-channel MOSFET switching tube S2Source and N-channel MOSFET switch tube S4The source contact.
The AC inductance part 110 includes an inductance L1And an inductance L2(ii) a Wherein, the inductance L1One end of which is connected to an N-channel MOSFET switching tube S1Drain electrode and diode D1Contact of anode, inductance L1Is connected to one end of the input, and the other end of the input is connected to the inductor L2And one terminal of the inductor L2Is connected to the N-channel MOSFET switch tube S3Drain electrode and diode D2Contact point of anode, and inductance L1Inductance of and inductance L2Is equal in inductance (L)1＝L2＝L)。
The switching operation of six N-channel MOSFET switching tubes in the power electronic switching network 120 realizes the switching operation of the inductor L in the ac inductor part 1101And an inductance L2Charging and discharging and AC input end power factor correction.
Fig. 2a to 2h show circuit diagrams of the operation modes of the converter according to the present invention during one cycle of the power supply voltage. A supply voltage vsIn the cycle, the converter has 8 working modes, wherein the positive half cycle is 4 (as shown in fig. 2 a-2 d), and the negative half cycle is 4 (as shown in fig. 2 e-2 h).
Assuming that the on-state voltage drops of the diode and the N-channel MOSFET switch tube are zero, the working process of the converter of the invention is described in detail in the following with reference to the attached drawings:
in a first operating mode shown in fig. 2a), the N-channel MOSFET switch S1N-channel MOSFET switch tube S2Switch-on, N-channel MOSFET switch tube S3N-channel MOSFET switch tube S4N-channel MOSFET switch tube S5N-channel MOSFET switch tube S6Turn-off, diode D1Diode D2Turning off; current iLThrough N-channel MOSFET switch tube S1N-channel MOSFET switch tube S2And N-channel MOSFET switch tube S3N-channel MOSFET switch tube S4The body diode of (1) forms a loop; capacitor C1Capacitor C2Discharging the load. Due to L1＝L2Voltage of each inductor
Figure GDA0002273143840000071
In a second mode of operation, as shown in FIG. 2b), the N-channel MOSFET switching transistor S1Switch-on, N-channel MOSFET switch tube S2N-channel MOSFET switch tube S3N-channel MOSFET switch tube S4N-channel MOSFET switch tube S5N-channel MOSFET switch tube S6Turn-off, diode D1Diode D2Turning off; current iLThrough N-channel MOSFET switch tube S1N-channel MOSFET switch tube S3N-channel MOSFET switch tube S4N-channel MOSFET switch tube S6Body diode and capacitor C2Forming a loop; capacitor C1Discharging to the load, capacitor C2Charging via a power electronic switching network. Due to L1＝L2Voltage of each inductor
Figure GDA0002273143840000072
In a third operating mode, as shown in fig. 2c), the N-channel MOSFET switch S5Switch-on, N-channel MOSFET switch tube S1N-channel MOSFET switch tube S2N-channel MOSFET switch tube S3N-channel MOSFET switch tube S4N-channel MOSFET switch tube S6Turn-off, diode D1On, diode D2Turning off; current iLVia a diode D1Capacitor C1N-channel MOSFET switch tube S5N-channel MOSFET switch tube S3The body diode of (1) forms a loop; capacitor C1Charged by a power electronic switching network, capacitor C2Discharging the load. Due to L1＝L2Voltage of each inductor
Figure GDA0002273143840000081
In a fourth operating mode shown in fig. 2d), the N-channel MOSFET switch S1N-channel MOSFET switch tube S2N-channel MOSFET switch tube S3N-channel MOSFET switch tube S4N-channel MOSFET switch tube S5N-channel MOSFET switch tube S6Turn-off, diode D1On, diode D2Turning off; current iLVia a diode D1Capacitor C1Capacitor C2N-channel MOSFET switch tube S3N-channel MOSFET switch tube S4The body diode of (1) forms a loop; capacitor C1Capacitor C2Charging via a power electronic switching network. Due to L1＝L2Voltage of each inductor
Figure GDA0002273143840000082
In a fifth operating mode, as shown in fig. 2e), the N-channel MOSFET switch transistor S3N-channel MOSFET switch tube S4Switch-on, N-channel MOSFET switch tube S1N-channel MOSFET switch tube S2N-channel MOSFET switch tube S5N-channel MOSFET switch tube S6Turn-off, diode D1Diode D2Turning off; current iLThrough N-channel MOSFET switch tube S3N-channel MOSFET switch tube S4And N-channel MOSFET switch tube S1N-channel MOSFET switch tube S2The body diode of (1) forms a loop; capacitor C1Capacitor C2Discharging the load. Due to L1＝L2Voltage of each inductor
Figure GDA0002273143840000083
In a sixth operating mode, as shown in fig. 2f), the N-channel MOSFET switch tube S3Switch-on, N-channel MOSFET switch tube S1N-channel MOSFET switch tube S2N-channel MOSFET switch tube S4N-channel MOSFET switch tube S5N-channel MOSFET switch tube S6Turn-off, diode D1Diode D2Turning off; current iLThrough N-channel MOSFET switch tube S3N-channel MOSFET switch tube S1N-channel MOSFET switch tube S2N-channel MOSFET switch tube S5Body diode and capacitor C2Forming a loop; capacitor C1Discharging to the load, capacitor C2Charging via a power electronic switching network. Due to L1＝L2Voltage of each inductor
Figure GDA0002273143840000084
In a seventh operating mode, shown in fig. 2g), the N-channel MOSFET switch transistor S6Switch-on, N-channel MOSFET switch tube S1N-channel MOSFET switch tube S2N-channel MOSFET switch tube S3N-channel MOSFET switch tube S4N-channel MOSFET switch tube S5Turn-off, diode D2On, diode D1Turning off; current iLVia a diode D2Capacitor C1N-channel MOSFET switch tube S6N-channel MOSFET switch tube S1The body diode of (1) forms a loop; capacitor C1Charged by a power electronic switching network, capacitor C2Discharging the load. Due to L1＝L2Voltage of each inductor
Figure GDA0002273143840000091
In the eighth operating mode shown in fig. 2h), the N-channel MOSFET switch transistor S1N-channel MOSFET switch tube S2N-channel MOSFET switch tube S3N-channel MOSFET switch tube S4N-channel MOSFET switch tube S5N-channel MOSFET switch tube S6Turn-off, diode D1Turn-off, diode D2Opening; current iLVia a diode D2Capacitor C1Capacitor C2N-channel MOSFET switch tube S1N-channel MOSFET switch tube S2The body diode of (1) forms a loop; capacitor C1、C2And charging through a power electronic switch network. Due to L1＝L2Voltage of each inductor
Figure GDA0002273143840000092
The converter provided by the invention only changes two series capacitors C without changing the circuit structure1And a capacitor C2Voltage distribution relation of (1), and N-channel MOSFET switching tube S1N-channel MOSFET switch tube S2N-channel MOSFET switch tube S3N-channel MOSFET switch tube S4N-channel MOSFET switch tube S5N-channel MOSFET switch tube S6The generation mode of the control signal can flexibly realize the mutual switching between the five-level working state and the seven-level working state.
Fig. 3 is a schematic diagram showing the division of the operating region of the converter of the present invention in the five-level operating state. According to the supply voltage vsDivides the converter into two operating regions: when in use
Figure GDA0002273143840000093
When the converter works in the area I; when in use
Figure GDA0002273143840000094
Figure GDA0002273143840000095
At this time, the converter operates in region ii.
Fig. 4 is a schematic diagram showing the division of the operating region of the converter of the present invention in the seven-level operating state. According to the supply voltage vsThe converter is divided into three operating regions: when in use
Figure GDA0002273143840000096
When the converter works in the area I; when in use
Figure GDA0002273143840000097
Figure GDA0002273143840000098
When the converter is operated in the area II; when in use
Figure GDA0002273143840000099
The converter is operating in region iii.
Fig. 5a to 5d show the modulation method and main waveform diagram of the converter of the present invention in the five-level operation state. When the capacitance C1Capacitor C2Voltage is satisfied
Figure GDA00022731438400000910
Under the condition of (2), the converter is in a five-level working state.
As shown in FIG. 5a), when
Figure GDA0002273143840000101
I.e. the supply voltage is in the region i of the positive half-cycle, the N-channel MOSFET switching tube S is controlled1Normally-on, N-channel MOSFET switch tube S3N-channel MOSFET switch tube S4N-channel MOSFET switch tube S5N-channel MOSFET switch tube S6Normally off, N-channel MOSFET switch tube S2And switching on and off alternately according to a PWM rule to switch the converter between a first working mode and a second working mode. In the first working mode, each inductor voltage
Figure GDA0002273143840000102
Current iLRising; in the second mode of operation, each inductor voltage
Figure GDA0002273143840000103
Current iLAnd (4) descending.
As shown in FIG. 5b), when
Figure GDA0002273143840000105
I.e. the region II of the positive half-cycle of the supply voltage, controls the N-channel MOSFET switching tube S1N-channel MOSFET switch tube S2N-channel MOSFET switch tube S3N-channel MOSFET switch tube S4N-channel MOSFET switch tube S6Normally closedOff, N-channel MOSFET switch tube S5And switching on and off alternately according to a PWM rule to switch the converter between a third working mode and a fourth working mode. In the third mode of operation, each inductor voltage
Figure GDA0002273143840000106
Current iLRising; in the fourth working mode, each inductor voltage
Figure GDA0002273143840000107
Current iLAnd (4) descending.
As shown in FIG. 5c), when
Figure RE-BDA0001400570580000107
I.e. the region I of the negative half-cycle of the supply voltage, controls the N-channel MOSFET switching tube S3Normally-on, N-channel MOSFET switch tube S1N-channel MOSFET switch tube S2N-channel MOSFET switch tube S5N-channel MOSFET switch tube S6Normally off, N-channel MOSFET switch tube S4And switching on and off alternately according to a PWM rule to switch the converter between a fifth working mode and a sixth working mode. In the fifth working mode, each inductor voltage
Figure RE-BDA0001400570580000108
Current iLRising; in the sixth working mode, each inductor voltage
Figure RE-BDA0001400570580000109
Current iLAnd (4) descending.
As shown in FIG. 5d), when
Figure RE-BDA00014005705800001010
I.e. the region II of the negative half-cycle of the supply voltage, controls the N-channel MOSFET switch tube S1N-channel MOSFET switch tube S2N-channel MOSFET switch tube S3N-channel MOSFET switch tube S4N-channel MOSFET switch tube S5Normally off, N-channel MOSFET switch tube S6According to PThe WM rule is alternately switched on and off, switching the converter between the seventh and eighth operating modes. In the seventh working mode, each inductor voltage
Figure RE-BDA00014005705800001011
Current iLRising; in the eighth mode of operation, each inductor voltage
Figure RE-BDA00014005705800001012
Current iLAnd (4) descending.
Modulating six N-channel MOSFET switch tubes S according to the rule as shown in FIGS. 5 a-5 d1、S2、S3、S4、S5、S6The on-off state of the inductor can ensure that the variation of each inductor voltage in any switching period is always equal to
Figure GDA0002273143840000111
Which is only 50% of the common two-level bridgeless Boost type PFC converter. Therefore, the size of the inductor can be reduced by about 50% on the premise of keeping the switching frequency consistent with the maximum allowable inductor current ripple. The inductor voltage v is applied during one period of the power supply voltageL1The waveform contains a total of five levels. And the charge and discharge control of the two capacitors can be realized within the time of at most one fourth of the power supply voltage period.
Fig. 6a to 6f show the modulation method and main waveforms of the converter of the present invention in the seven-level operation state. When the capacitance C1Capacitor C2Voltage is satisfied
Figure GDA0002273143840000112
The converter is in a seven-level operating state.
As shown in FIG. 6a), when
Figure GDA0002273143840000113
I.e. the supply voltage is in the region i of the positive half-cycle, the N-channel MOSFET switching tube S is controlled1Normally-on, N-channel MOSFET switch tube S3N-channel MOSFET switching tube S4N-channel MOSFET switch tube S5N-channel MOSFET switch tube S6Normally off, N-channel MOSFET switch tube S2And switching on and off alternately according to a PWM rule to switch the converter between a first working mode and a second working mode. In the first working mode, each inductor voltage
Figure GDA0002273143840000114
Current iLRising; in the second mode of operation, each inductor voltage
Figure GDA0002273143840000115
Current iLAnd (4) descending.
As shown in FIG. 6b), when
Figure GDA0002273143840000116
I.e. the region II of the positive half-cycle of the supply voltage, controls the N-channel MOSFET switch tube S2N-channel MOSFET switch tube S3N-channel MOSFET switch tube S4N-channel MOSFET switch tube S6Normally off, N-channel MOSFET switch tube S1N-channel MOSFET switch tube S5Alternately switched on and off according to PWM rule and N-channel MOSFET switching tube S1And N-channel MOSFET switch tube S5The gate drive waveforms of (a) are complementary to each other, so that the converter switches between the second and third modes of operation. In the second mode of operation, each inductor voltage
Figure GDA0002273143840000117
Current iLRising; in the third mode of operation, each inductor voltage
Figure GDA0002273143840000118
Current iLAnd (4) descending.
As shown in FIG. 6c), when
Figure GDA0002273143840000119
I.e. the region III of the positive half-cycle of the supply voltage, controls the N-channel MOSFET switching transistor S1N-channel MOSFET switching tube S2N-channel MOSFET switch tube S3N-channel MOSFET switch tube S4N-channel MOSFET switch tube S6Normally off, N-channel MOSFET switch tube S5And switching on and off alternately according to a PWM rule to switch the converter between a third working mode and a fourth working mode. In the third mode of operation, each inductor voltage
Figure GDA0002273143840000121
Current iLRising; in the fourth working mode, each inductor voltage
Figure GDA0002273143840000122
Current iLAnd (4) descending.
As shown in FIG. 6d), when
Figure GDA0002273143840000123
I.e. the region I of the negative half-cycle of the supply voltage, controls the N-channel MOSFET switching tube S3Normally-on, N-channel MOSFET switch tube S1N-channel MOSFET switch tube S2N-channel MOSFET switch tube S5N-channel MOSFET switch tube S6Normally off, N-channel MOSFET switch tube S4And switching on and off alternately according to a PWM rule to switch the converter between a fifth working mode and a sixth working mode. In the fifth working mode, each inductor voltage
Figure GDA0002273143840000124
Current iLRising; in the sixth working mode, each inductor voltage
Figure GDA0002273143840000125
Current iLAnd (4) descending.
As shown in FIG. 6e), when
Figure GDA0002273143840000126
I.e. the region II of the negative half-cycle of the supply voltage, controls the N-channel MOSFET switch tube S1N-channel MOSFET switch tube S2N-channel MOSFET switch tube S4N-channel MOSFET switch tube S5Normally off, N-channel MOSFET switch tube S3N-channel MOSFET switch tube S6Alternately switched on and off according to PWM rule and N-channel MOSFET switching tube S3And N-channel MOSFET switch tube S6The gate drive waveforms of (a) are complementary to each other, switching the converter between the sixth and seventh modes of operation. In the sixth working mode, each inductor voltage
Figure GDA0002273143840000127
Current iLRising; in the seventh working mode, each inductor voltage
Figure GDA0002273143840000128
Current iLAnd (4) descending.
As shown in FIG. 6f), when
Figure GDA0002273143840000129
I.e. the region III of the negative half-cycle of the supply voltage, controls the N-channel MOSFET switching tube S1N-channel MOSFET switch tube S2N-channel MOSFET switch tube S3N-channel MOSFET switch tube S4N-channel MOSFET switch tube S5Normally off, N-channel MOSFET switch tube S6And switching on and off alternately according to a PWM rule to switch the converter between the seventh working mode and the eighth working mode. In the seventh working mode, each inductor voltage
Figure GDA00022731438400001210
Current iLRising; in the eighth mode of operation, each inductor voltage
Figure GDA00022731438400001211
Current iLAnd (4) descending.
The six switching tubes S are modulated according to the law shown in FIGS. 6a to 6f1、S2、S3、S4、S5、S6The on-off state of the inductor can ensure that the variation of each inductor voltage in any switching period is always equal to
Figure GDA0002273143840000131
Which is only 33% of the common two-level bridgeless Boost type PFC converter. Therefore, on the premise of keeping the switching frequency consistent with the maximum allowable inductor current ripple, the size of the inductor can be reduced by about 67%. In one supply voltage cycle, the inductor voltage vL1The waveform contains seven levels in total. And the charge and discharge control of the two capacitors can be realized within the time of at most one fourth of the power supply voltage period.
It should be understood that: the above embodiments are merely illustrative, not restrictive, and any invention that does not exceed the spirit of the present invention falls within the scope of the present invention.

Claims (3)

1. A modulation method of a flexible multi-level bridgeless power factor correction converter comprises an alternating current inductance part (110), a power electronic switch network (120) and a direct current capacitance part (130);
the power electronic switching network (120) comprises an N-channel MOSFET switching tube S1N-channel MOSFET switch tube S2N-channel MOSFET switch tube S3N-channel MOSFET switch tube S4N-channel MOSFET switch tube S5And N-channel MOSFET switch tube S6And a diode D1And a diode D2(ii) a Wherein, the diode D1Anode connected to N-channel MOSFET switch tube S1Drain, N-channel MOSFET switch tube S1Source connected to N-channel MOSFET switch tube S2Drain, N-channel MOSFET switch tube S2Source connected to N-channel MOSFET switch tube S4A source electrode; diode D2Anode connected to N-channel MOSFET switch tube S3Drain, N-channel MOSFET switch tube S3Source connected to N-channel MOSFET switch tube S4A drain electrode; diode D1Cathode connected to diode D2A cathode; n-channel MOSFET switch tube S5Source connected to N-channel MOSFET switch tube S3Source, N-channel MOSFET switch tube S5Drain electrodeIs connected to the midpoint of the direct current capacitance portion (130); n-channel MOSFET switch tube S6Source connected to N-channel MOSFET switch tube S1Source, N-channel MOSFET switch tube S6The drain electrode is connected to the midpoint of the direct current capacitance part (130);
the DC capacitor part (130) comprises two capacitors C connected in series1And a capacitor C2(ii) a Wherein, the capacitor C1Is connected to the diode D2Cathode of (2), capacitor C1Is connected to the capacitor C2Positive electrode, N channel MOSFET switch tube S5Drain and N-channel MOSFET switch tube S6A contact of the drain electrode; capacitor C2Is connected to the N-channel MOSFET switching tube S2Source and N-channel MOSFET switch tube S4A contact of the source;
the AC inductance part (110) includes an inductance L1And an inductance L2(ii) a Wherein, the inductance L1One end of which is connected to an N-channel MOSFET switching tube S1Drain electrode and diode D1Contact point of anode, inductor L1Is connected at the other end to VsAnd one end of, and VsIs connected to the inductor L at the other end2And one terminal of the inductor L2Is connected to the N-channel MOSFET switch tube S3Drain electrode and diode D2Contact point of anode, and inductance L1Inductance of and inductance L2The inductance values of the two inductors are equal, wherein Vs is a power supply voltage; the method is characterized in that: the modulation method comprises the following steps:
when the capacitance C1Capacitor C2Voltage is satisfied
Figure FDA0002237449510000027
Under the condition of (3), the converter is in a five-level working state;
when the capacitance C1Capacitor C2Voltage is satisfied
Figure FDA0002237449510000026
Under the condition of (2), the converter is in a seven-level working state;
wherein, V0To output a load RLVoltage, load RLIs connected to the positive pole of C1, and a load RLAnd the other end thereof is connected to the negative electrode of C2.
2. The modulation method of the flexible multilevel bridgeless pfc converter of claim 1, characterized by:
when in use
Figure FDA0002237449510000021
Controlling N-channel MOSFET switch tube S1Normally-on, N-channel MOSFET switch tube S3N-channel MOSFET switch tube S4N-channel MOSFET switch tube S5N-channel MOSFET switch tube S6Normally off, N-channel MOSFET switch tube S2Alternately switching on and off according to a PWM rule;
when in use
Figure FDA0002237449510000022
Controlling N-channel MOSFET switch tube S1N-channel MOSFET switch tube S2N-channel MOSFET switch tube S3N-channel MOSFET switch tube S4N-channel MOSFET switch tube S6Normally off, N-channel MOSFET switch tube S5Alternately switching on and off according to a PWM rule;
when in use
Figure FDA0002237449510000023
Controlling N-channel MOSFET switch tube S3Normally-on, N-channel MOSFET switch tube S1N-channel MOSFET switch tube S2N-channel MOSFET switch tube S5N-channel MOSFET switch tube S6Normally off, N-channel MOSFET switch tube S4Alternately switching on and off according to a PWM rule;
when in use
Figure FDA0002237449510000024
Controlling N-channel MOSFET switch tube S1N-channel MOSFET switch tube S2N-channel MOSFET switch tube S3N-channel MOSFET switch tube S4N-channel MOSFET switch tube S5Normally off, N-channel MOSFET switch tube S6And alternately switching on and off according to a PWM rule.
3. The modulation method of the flexible multilevel bridgeless pfc converter of claim 1, characterized by:
when in use
Figure FDA0002237449510000025
Controlling N-channel MOSFET switch tube S1Normally-on, N-channel MOSFET switch tube S3N-channel MOSFET switch tube S4N-channel MOSFET switch tube S5N-channel MOSFET switch tube S6Normally-off N-channel MOSFET switch tube S2Alternately switching on and off according to a PWM rule;
when in use
Figure FDA0002237449510000031
Controlling N-channel MOSFET switch tube S2N-channel MOSFET switch tube S3N-channel MOSFET switch tube S4N-channel MOSFET switch tube S6Normally-off N-channel MOSFET switch tube S1N-channel MOSFET switch tube S5Alternately switched on and off according to PWM rule and N-channel MOSFET switching tube S1And N-channel MOSFET switch tube S5The gate drive waveforms of (a) are complementary;
when in use
Figure FDA0002237449510000032
Controlling N-channel MOSFET switch tube S1N-channel MOSFET switch tube S2N-channel MOSFET switch tube S3N-channel MOSFET switch tube S4N-channel MOSFET switch tube S6Normally-off N-channel MOSFET switch tube S5Alternately switching on and off according to a PWM rule;
when in use
Figure FDA0002237449510000033
Controlling N-channel MOSFET switch tube S3Normally-on, N-channel MOSFET switch tube S1N-channel MOSFET switch tube S2N-channel MOSFET switch tube S5N-channel MOSFET switch tube S6Normally-off N-channel MOSFET switch tube S4Alternately switching on and off according to a PWM rule;
when in use
Figure FDA0002237449510000034
Controlling N-channel MOSFET switch tube S1N-channel MOSFET switch tube S2N-channel MOSFET switch tube S4N-channel MOSFET switch tube S5Normally-off N-channel MOSFET switch tube S3N-channel MOSFET switch tube S6Alternately switched on and off according to PWM rule and N-channel MOSFET switching tube S3And N-channel MOSFET switch tube S6The gate drive waveforms of (a) are complementary;
when in use
Figure FDA0002237449510000035
Controlling N-channel MOSFET switch tube S1N-channel MOSFET switch tube S2N-channel MOSFET switch tube S3N-channel MOSFET switch tube S4N-channel MOSFET switch tube S5Normally-off N-channel MOSFET switch tube S6And alternately switching on and off according to a PWM rule.
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