CN107452812A - A kind of encapsulating structure of semiconductor diode device - Google Patents
A kind of encapsulating structure of semiconductor diode device Download PDFInfo
- Publication number
- CN107452812A CN107452812A CN201710496661.1A CN201710496661A CN107452812A CN 107452812 A CN107452812 A CN 107452812A CN 201710496661 A CN201710496661 A CN 201710496661A CN 107452812 A CN107452812 A CN 107452812A
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- China
- Prior art keywords
- epoxy resin
- layer
- diode device
- semiconductor diode
- tack coat
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 65
- 229910052751 metal Inorganic materials 0.000 claims abstract description 47
- 239000002184 metal Substances 0.000 claims abstract description 47
- 239000012528 membrane Substances 0.000 claims abstract description 41
- 239000000805 composite resin Substances 0.000 claims abstract description 32
- 239000000463 material Substances 0.000 claims abstract description 27
- 239000011521 glass Substances 0.000 claims abstract description 7
- 238000005538 encapsulation Methods 0.000 claims abstract description 5
- 239000003822 epoxy resin Substances 0.000 claims description 91
- 229920000647 polyepoxide Polymers 0.000 claims description 91
- -1 Butene nitride Chemical class 0.000 claims description 29
- 229920001577 copolymer Polymers 0.000 claims description 23
- 229920001343 polytetrafluoroethylene Polymers 0.000 claims description 22
- 239000004810 polytetrafluoroethylene Substances 0.000 claims description 22
- 230000003014 reinforcing effect Effects 0.000 claims description 22
- 238000003491 array Methods 0.000 claims description 10
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 claims description 8
- VXNZUUAINFGPBY-UHFFFAOYSA-N ethyl ethylene Natural products CCC=C VXNZUUAINFGPBY-UHFFFAOYSA-N 0.000 claims description 6
- 239000003292 glue Substances 0.000 claims description 6
- 229920005989 resin Polymers 0.000 claims description 6
- 239000011347 resin Substances 0.000 claims description 6
- 239000004411 aluminium Substances 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- KYTZHLUVELPASH-UHFFFAOYSA-N naphthalene-1,2-dicarboxylic acid Chemical compound C1=CC=CC2=C(C(O)=O)C(C(=O)O)=CC=C21 KYTZHLUVELPASH-UHFFFAOYSA-N 0.000 claims description 5
- 229910001220 stainless steel Inorganic materials 0.000 claims description 4
- 239000010935 stainless steel Substances 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- IAQRGUVFOMOMEM-UHFFFAOYSA-N butene Natural products CC=CC IAQRGUVFOMOMEM-UHFFFAOYSA-N 0.000 claims description 2
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 2
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 claims 1
- 239000002131 composite material Substances 0.000 abstract description 7
- 239000004593 Epoxy Substances 0.000 description 6
- 239000002023 wood Substances 0.000 description 3
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 230000005622 photoelectricity Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical compound FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 239000010426 asphalt Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 125000004185 ester group Chemical group 0.000 description 1
- GVINIKRAUKVLRA-UHFFFAOYSA-N ethane-1,2-diol;naphthalene-1,2-dicarboxylic acid Chemical compound OCCO.C1=CC=CC2=C(C(O)=O)C(C(=O)O)=CC=C21 GVINIKRAUKVLRA-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 125000005487 naphthalate group Chemical group 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Laminated Bodies (AREA)
- Photovoltaic Devices (AREA)
Abstract
The present invention relates to a kind of encapsulating structure of semiconductor diode device, belong to technical field of semiconductor encapsulation, the encapsulating structure of the semiconductor diode device includes the armorplate glass, resin composite materials glued membrane, semiconductor diode device layer, metal resin composite material glued membrane and the backboard that stack gradually.The present invention is packaged using new composite glued membrane to semiconductor diode device, improves the service life of semiconductor diode device, and the encapsulating structure has the advantages that good stability, superior performance, good weatherability.
Description
Technical field
The present invention relates to technical field of semiconductor encapsulation, and in particular to a kind of encapsulating structure of semiconductor diode device.
Background technology
In recent years, semiconductor diode device is often packaged using resin material, especially for solar cell or
Photodetector, conventional encapsulating structure is transparent cover plate, EVA encapsulates glue-line, solar cell layer or photodetector layers,
EVA encapsulates glue-line and backboard, therefore, how to design a kind of encapsulating structure of excellent combination property, is that industry is urgently to be resolved hurrily
Problem.
The content of the invention
The purpose of the present invention is to overcome above-mentioned the deficiencies in the prior art, there is provided a kind of encapsulation knot of semiconductor diode device
Structure.
To achieve the above object, the encapsulating structure of a kind of semiconductor diode device proposed by the present invention, the semiconductor
The encapsulating structure of diode component includes armorplate glass, resin composite materials glued membrane, the semiconductor diode device stacked gradually
Part layer, metal-resin composite glued membrane and backboard；
The resin composite materials glued membrane includes the first ethene -1- of the close semiconductor diode device layer stacked gradually
Butene nitride layer, the first epoxy resin tack coat, PEN basic unit, the second epoxy resin tack coat and
First polytetrafluoroethylene floor, multiple run through the poly- naphthalenedicarboxylic acid wherein being offered in the PEN basic unit
The through hole of glycol ester basic unit, bonds reinforcing prop in the through hole filled with the first epoxy resin, and first epoxy resin glues
Tie reinforcing prop and connect the first epoxy resin tack coat and the second epoxy resin tack coat；
The metal-resin composite glued membrane includes the second second of the close semiconductor diode device layer stacked gradually
Alkene-butene-1 copolymer layer, the 3rd epoxy resin tack coat, metal-based layer, the 4th epoxy resin tack coat and second poly- four
PVF layer, wherein offering multiple through holes through the metal-based layer in the metal-based layer, it is filled with the through hole
Second epoxy resin bonds reinforcing prop, second epoxy resin bond reinforcing prop connect the 3rd epoxy resin tack coat and
The 4th epoxy resin tack coat.
Preferably, the thickness of first ethene-butene-1 copolymer layer is 200-400 microns, first epoxy
The thickness range of resin-bonded layer and the second epoxy resin tack coat is 400-800 nanometers, the poly- naphthalenedicarboxylic acid second two
The thickness of alcohol ester basic unit is 300-500 microns, and the thickness of first polytetrafluoroethylene floor is 100-200 microns, the poly- naphthalene
Multiple through holes in naphthalate basic unit are arranged in arrays.
Preferably, the thickness of second ethene-butene-1 copolymer layer is 100-500 microns, the 3rd epoxy
The thickness of resin-bonded layer and the 4th epoxy resin tack coat is 500-900 nanometers, and the thickness of the metal-based layer is
600-900 microns, the thickness of second polytetrafluoroethylene floor are 100-300 microns, multiple through holes in the metal-based layer
It is arranged in arrays.
Preferably, the material of the metal-based layer is one kind in aluminium, copper and stainless steel.
Preferably, the semiconductor diode device in the semiconductor diode device layer is solar cell or photoelectricity
Detector.
Preferably, the backboard is metal backing or TPT backboards.
Beneficial effects of the present invention are as follows：
In the resin composite materials glued membrane and metal-resin composite glued membrane of the present invention, by poly- naphthalenedicarboxylic acid ethylene glycol
Set in ester group layer or metal-based layer and run through through hole so that the epoxy resin tack coat of basic unit both sides is bonded by epoxy resin to be added
Strong post connection, improves the adhesion and stability of composite glued membrane, avoids peeling-off.
The present invention metal-resin composite glued membrane in by setting metal-based layer, can effectively reflectance-transmittance partly lead
The light of body diode device layer, and then improve the utilization rate of light.
The present invention in the composite glued membrane close to semiconductor diode device layer side by setting ethene -1- butylene to be total to
Polymers layer, and polytetrafluoroethylene floor is set in the composite glued membrane away from semiconductor diode device layer side, said structure
Set, ensure to improve the weatherability of encapsulating structure while packaged stability.
Brief description of the drawings
Fig. 1 is the structural representation of the encapsulating structure of the semiconductor devices of the present invention；
Fig. 2 is the schematic cross-section of the resin composite materials glued membrane of the present invention；
Fig. 3 is the schematic cross-section of the metal-resin composite glued membrane of the present invention.
Embodiment
Referring to Fig. 1-3, a kind of encapsulating structure of semiconductor diode device, the encapsulation knot of the semiconductor diode device
Armorplate glass 1, resin composite materials glued membrane 2, semiconductor diode device layer 3, the metal-resin that structure includes stacking gradually are multiple
Condensation material glued membrane 4 and backboard 5；The resin composite materials glued membrane 2 includes the close semiconductor diode stacked gradually
First ethene of device layer-butene-1 copolymer layer 21, the first epoxy resin tack coat 22, PEN basic unit
23rd, the second epoxy resin tack coat 24 and the first polytetrafluoroethylene floor 25, wherein the PEN basic unit
Multiple through holes through the PEN basic unit 23 are offered in 23, the first epoxy is filled with the through hole
Resin-bonded reinforcing prop 26, first epoxy resin bond reinforcing prop 26 and connect the first epoxy resin tack coat 22 and institute
State the second epoxy resin tack coat 24；The metal-resin composite glued membrane 4 includes the close semiconductor stacked gradually
Second ethene of diode component layer-butene-1 copolymer layer 41, the 3rd epoxy resin tack coat 42, metal-based layer the 43, the 4th
The polytetrafluoroethylene floor 45 of epoxy resin tack coat 44 and second, wherein being offered in the metal-based layer 43 multiple through described
The through hole of metal-based layer, bonds reinforcing prop 46 in the through hole filled with the second epoxy resin, and second epoxy resin bonds
Reinforcing prop 46 connects the 3rd epoxy resin tack coat 42 and the 4th epoxy resin tack coat 44.
Wherein, the thickness of first ethene-butene-1 copolymer layer 21 is 200-400 microns, first asphalt mixtures modified by epoxy resin
The thickness range of fat tack coat 22 and the second epoxy resin tack coat 24 is 400-800 nanometers, the poly- naphthalenedicarboxylic acid second
The thickness of diol ester basic unit 23 is 300-500 microns, and the thickness of first polytetrafluoroethylene floor 25 is 100-200 microns, institute
The multiple through holes stated in PEN basic unit 23 are arranged in arrays.Second ethene-butene-1 copolymer layer
41 thickness is the thickness of 100-500 microns, the 3rd epoxy resin tack coat 42 and the 4th epoxy resin tack coat 44
Spend for 500-900 nanometers, the thickness of the metal-based layer 43 is 600-900 microns, the thickness of second polytetrafluoroethylene floor 45
Spend for 100-300 microns, multiple through holes in the metal-based layer 43 are arranged in arrays.The material of the metal-based layer 43 is
One kind in aluminium, copper and stainless steel.Semiconductor diode device in the semiconductor diode device layer 3 is solar cell
Or photodetector.The backboard 5 is metal backing or TPT backboards.
Embodiment 1
Referring to Fig. 1-3, a kind of encapsulating structure of semiconductor diode device, the encapsulating structure bag of the semiconductor diode device
Include the armorplate glass 1 stacked gradually, resin composite materials glued membrane 2, semiconductor diode device layer 3, metal-resin composite wood
Expect glued membrane 4 and backboard 5；The resin composite materials glued membrane 2 includes the close semiconductor diode device stacked gradually
Layer the first ethene-butene-1 copolymer layer 21, the first epoxy resin tack coat 22, PEN basic unit 23,
Second epoxy resin tack coat 24 and the first polytetrafluoroethylene floor 25, wherein in the PEN basic unit 23
Multiple through holes through the PEN basic unit 23 are offered, the first epoxy resin is filled with the through hole
Bond reinforcing prop 26, first epoxy resin bonds reinforcing prop 26 and connects the first epoxy resin tack coat 22 and described the
Diepoxy resin tack coat 24；The metal-resin composite glued membrane 4 includes the close pole of semiconductor two stacked gradually
Second ethene of tube device layer-butene-1 copolymer layer 41, the 3rd epoxy resin tack coat 42, metal-based layer 43, the 4th epoxy
The resin-bonded polytetrafluoroethylene floor 45 of layer 44 and second, multiple run through the metal wherein being offered in the metal-based layer 43
The through hole of basic unit, reinforcing prop 46 is bonded filled with the second epoxy resin in the through hole, second epoxy resin, which bonds, to be strengthened
Post 46 connects the 3rd epoxy resin tack coat 42 and the 4th epoxy resin tack coat 44.Wherein, first ethene-
The thickness of butene-1 copolymer layer 21 is 200 microns, and the first epoxy resin tack coat 22 and second epoxy resin glue
The thickness for tying layer 24 is 400 nanometers, and the thickness of the PEN basic unit 23 is 300 microns, and described first is poly-
The thickness of tetrafluoroethene layer 25 is 100 microns, and multiple through holes in the PEN basic unit 23 are arranged in matrix
Row.The thickness of second ethene-butene-1 copolymer layer 41 is 100 microns, the 3rd epoxy resin tack coat 42 and institute
The thickness for stating the 4th epoxy resin tack coat 44 is 500 nanometers, and the thickness of the metal-based layer 43 is 600 microns, described second
The thickness of polytetrafluoroethylene floor 45 is 100 microns, and multiple through holes in the metal-based layer 43 are arranged in arrays.The Metal Substrate
The material of layer 43 is aluminium.Semiconductor diode device in the semiconductor diode device layer 3 is solar cell or photoelectricity
Detector.The backboard 5 is metal backing or TPT backboards.
Embodiment 2
Referring to Fig. 1-3, a kind of encapsulating structure of semiconductor diode device, the encapsulating structure bag of the semiconductor diode device
Include the armorplate glass 1 stacked gradually, resin composite materials glued membrane 2, semiconductor diode device layer 3, metal-resin composite wood
Expect glued membrane 4 and backboard 5；The resin composite materials glued membrane 2 includes the close semiconductor diode device stacked gradually
Layer the first ethene-butene-1 copolymer layer 21, the first epoxy resin tack coat 22, PEN basic unit 23,
Second epoxy resin tack coat 24 and the first polytetrafluoroethylene floor 25, wherein in the PEN basic unit 23
Multiple through holes through the PEN basic unit 23 are offered, the first epoxy resin is filled with the through hole
Bond reinforcing prop 26, first epoxy resin bonds reinforcing prop 26 and connects the first epoxy resin tack coat 22 and described the
Diepoxy resin tack coat 24；The metal-resin composite glued membrane 4 includes the close pole of semiconductor two stacked gradually
Second ethene of tube device layer-butene-1 copolymer layer 41, the 3rd epoxy resin tack coat 42, metal-based layer 43, the 4th epoxy
The resin-bonded polytetrafluoroethylene floor 45 of layer 44 and second, multiple run through the metal wherein being offered in the metal-based layer 43
The through hole of basic unit, reinforcing prop 46 is bonded filled with the second epoxy resin in the through hole, second epoxy resin, which bonds, to be strengthened
Post 46 connects the 3rd epoxy resin tack coat 42 and the 4th epoxy resin tack coat 44.Wherein, first ethene-
The thickness of butene-1 copolymer layer 21 is 400 microns, and the first epoxy resin tack coat 22 and second epoxy resin glue
The thickness for tying layer 24 is 800 nanometers, and the thickness of the PEN basic unit 23 is 500 microns, and described first is poly-
The thickness of tetrafluoroethene layer 25 is 200 microns, and multiple through holes in the PEN basic unit 23 are arranged in matrix
Row.The thickness of second ethene-butene-1 copolymer layer 41 is 500 microns, the 3rd epoxy resin tack coat 42 and institute
The thickness for stating the 4th epoxy resin tack coat 44 is 900 nanometers, and the thickness of the metal-based layer 43 is 900 microns, described second
The thickness of polytetrafluoroethylene floor 45 is 300 microns, and multiple through holes in the metal-based layer 43 are arranged in arrays.The Metal Substrate
The material of layer 43 is stainless steel.Semiconductor diode device in the semiconductor diode device layer 3 for solar cell or
Photodetector.The backboard 5 is metal backing or TPT backboards.
Embodiment 3
Referring to Fig. 1-3, a kind of encapsulating structure of semiconductor diode device, the encapsulating structure bag of the semiconductor diode device
Include the armorplate glass 1 stacked gradually, resin composite materials glued membrane 2, semiconductor diode device layer 3, metal-resin composite wood
Expect glued membrane 4 and backboard 5；The resin composite materials glued membrane 2 includes the close semiconductor diode device stacked gradually
Layer the first ethene-butene-1 copolymer layer 21, the first epoxy resin tack coat 22, PEN basic unit 23,
Second epoxy resin tack coat 24 and the first polytetrafluoroethylene floor 25, wherein in the PEN basic unit 23
Multiple through holes through the PEN basic unit 23 are offered, the first epoxy resin is filled with the through hole
Bond reinforcing prop 26, first epoxy resin bonds reinforcing prop 26 and connects the first epoxy resin tack coat 22 and described the
Diepoxy resin tack coat 24；The metal-resin composite glued membrane 4 includes the close pole of semiconductor two stacked gradually
Second ethene of tube device layer-butene-1 copolymer layer 41, the 3rd epoxy resin tack coat 42, metal-based layer 43, the 4th epoxy
The resin-bonded polytetrafluoroethylene floor 45 of layer 44 and second, multiple run through the metal wherein being offered in the metal-based layer 43
The through hole of basic unit, reinforcing prop 46 is bonded filled with the second epoxy resin in the through hole, second epoxy resin, which bonds, to be strengthened
Post 46 connects the 3rd epoxy resin tack coat 42 and the 4th epoxy resin tack coat 44.Wherein, first ethene-
The thickness of butene-1 copolymer layer 21 is 300 microns, and the thickness of the first epoxy resin tack coat 22 is 500 nanometers, described
The thickness of second epoxy resin tack coat 24 is 600 nanometers, and the thickness of the PEN basic unit 23 is micro- for 400
Rice, the thickness of first polytetrafluoroethylene floor 25 is 150 microns, multiple in the PEN basic unit 23
Through hole is arranged in arrays.The thickness of second ethene-butene-1 copolymer layer 41 is 300 microns, the 3rd epoxy resin
The thickness of tack coat 42 is 650 nanometers, and the thickness of the 4th epoxy resin tack coat 44 is 800 nanometers, the metal-based layer
43 thickness is 750 microns, and the thickness of second polytetrafluoroethylene floor 45 is 200 microns, more in the metal-based layer 43
Individual through hole is arranged in arrays.The material of the metal-based layer 43 is aluminium.Semiconductor two in the semiconductor diode device layer 3
Pole pipe device is solar cell or photodetector.The backboard 5 is metal backing or TPT backboards.
In the resin composite materials glued membrane and metal-resin composite glued membrane of the present invention, by poly- naphthalenedicarboxylic acid second
Set in diol ester basic unit or metal-based layer and run through through hole so that the epoxy resin tack coat of basic unit both sides is glued by epoxy resin
Reinforcing prop connection is tied, the adhesion and stability of composite glued membrane is improved, avoids peeling-off.Metal-tree of the present invention
By setting metal-based layer in resin composite material glued membrane, can effective reflectance-transmittance semiconductor diode device layer light, and then
Improve the utilization rate of light.The present invention by close to semiconductor diode device layer side composite glued membrane in set ethene-
Butene-1 copolymer layer, and polytetrafluoroethylene floor is set in the composite glued membrane away from semiconductor diode device layer side, on
The setting of structure is stated, ensures to improve the weatherability of encapsulating structure while packaged stability.
Finally it should be noted that：Obviously, above-described embodiment is only intended to clearly illustrate example of the present invention, and simultaneously
The non-restriction to embodiment.For those of ordinary skill in the field, can also do on the basis of the above description
Go out other various forms of changes or variation.There is no necessity and possibility to exhaust all the enbodiments.And thus drawn
Among the obvious changes or variations that Shen goes out is still in protection scope of the present invention.
Claims (6)
- A kind of 1. encapsulating structure of semiconductor diode device, it is characterised in that：The encapsulation knot of the semiconductor diode device Armorplate glass, resin composite materials glued membrane, semiconductor diode device layer, the metal-resin that structure includes stacking gradually are compound Material glued membrane and backboard；The resin composite materials glued membrane includes the first ethene -1- of the close semiconductor diode device layer stacked gradually Butene nitride layer, the first epoxy resin tack coat, PEN basic unit, the second epoxy resin tack coat and First polytetrafluoroethylene floor, multiple run through the poly- naphthalenedicarboxylic acid wherein being offered in the PEN basic unit The through hole of glycol ester basic unit, bonds reinforcing prop in the through hole filled with the first epoxy resin, and first epoxy resin glues Tie reinforcing prop and connect the first epoxy resin tack coat and the second epoxy resin tack coat；The metal-resin composite glued membrane includes the second second of the close semiconductor diode device layer stacked gradually Alkene-butene-1 copolymer layer, the 3rd epoxy resin tack coat, metal-based layer, the 4th epoxy resin tack coat and second poly- four PVF layer, wherein offering multiple through holes through the metal-based layer in the metal-based layer, it is filled with the through hole Second epoxy resin bonds reinforcing prop, second epoxy resin bond reinforcing prop connect the 3rd epoxy resin tack coat and The 4th epoxy resin tack coat.
- 2. the encapsulating structure of semiconductor diode device according to claim 1, it is characterised in that：First ethene- The thickness of butene-1 copolymer layer is 200-400 microns, and the first epoxy resin tack coat and second epoxy resin glue The thickness range of knot layer is 400-800 nanometers, and the thickness of the PEN basic unit is 300-500 microns, institute The thickness for stating the first polytetrafluoroethylene floor is 100-200 microns, multiple through holes in the PEN basic unit It is arranged in arrays.
- 3. the encapsulating structure of semiconductor diode device according to claim 1, it is characterised in that：Second ethene- The thickness of butene-1 copolymer layer is 100-500 microns, and the 3rd epoxy resin tack coat and the 4th epoxy resin glue The thickness of knot layer is 500-900 nanometers, and the thickness of the metal-based layer is 600-900 microns, second polytetrafluoroethylene floor Thickness be 100-300 microns, multiple through holes in the metal-based layer are arranged in arrays.
- 4. the encapsulating structure of semiconductor diode device according to claim 3, it is characterised in that：The metal-based layer Material is one kind in aluminium, copper and stainless steel.
- 5. the encapsulating structure of semiconductor diode device according to claim 1, it is characterised in that：The pole of semiconductor two Semiconductor diode device in tube device layer is solar cell or photodetector.
- 6. the encapsulating structure of semiconductor diode device according to claim 1, it is characterised in that：The backboard is metal Backboard or TPT backboards.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710496661.1A CN107452812B (en) | 2017-06-26 | 2017-06-26 | Packaging structure of semiconductor diode device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710496661.1A CN107452812B (en) | 2017-06-26 | 2017-06-26 | Packaging structure of semiconductor diode device |
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| Publication Number | Publication Date |
|---|---|
| CN107452812A true CN107452812A (en) | 2017-12-08 |
| CN107452812B CN107452812B (en) | 2021-07-23 |
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| CN201710496661.1A Active CN107452812B (en) | 2017-06-26 | 2017-06-26 | Packaging structure of semiconductor diode device |
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| CN204632774U (en) * | 2015-03-26 | 2015-09-09 | 汉能新材料科技有限公司 | A kind of flexible package composite membrane |
| CN205498231U (en) * | 2016-03-01 | 2016-08-24 | 常熟市冠日新材料有限公司 | Environmental protection enhancement mode solar backplane |
| CN106159014A (en) * | 2016-08-26 | 2016-11-23 | 江苏东鋆光伏科技有限公司 | High-performance weather-proof composite encapsulated photovoltaic module and preparation method thereof |
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