CN107452619A - A kind of IGBT silicon chip back sides method for annealing and laser annealing system - Google Patents
A kind of IGBT silicon chip back sides method for annealing and laser annealing system Download PDFInfo
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- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
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Abstract
The present invention proposes that a kind of IGBT silicon chip back sides method for annealing and laser annealing system, this method comprise the following steps：Complete the positive technique of IGBT silicon chips；Reduction process is carried out to the silicon chip back side, is ground to required thickness；Ion implanting is carried out to the silicon chip；The silicon chip back side is made annealing treatment；Metalized is carried out to the silicon chip back side.IGBT silicon chip back sides method for annealing and laser annealing system proposed by the present invention, adapt to IGBT back sides annealing process research and development node, release various lasers combination plus pre- hot function, to meet the multi-level annealing process demand in the specific IGBT back sides, provide a set of laser annealing system solution, the annealing of high power excimer laser device and proton irradiation+low temperature furnace anneal process are substituted, realizes different junction depth customization demands.
Description
Technical field
The present invention relates to semiconductor fabrication process technical field, and more particularly to a kind of IGBT silicon chip back sides annealing
Method and laser annealing system.
Background technology
IGBT (Insulated Gate Bipolar Transistor), insulated gate bipolar transistor, is (double by BJT
Polar form triode) and MOS (insulating gate type field effect tube) composition compound full-control type voltage driven type power partly lead
Body device, have advantage of both MOSFET high input impedance and GTR low conduction voltage drop concurrently.GTR
Saturation pressure reduces, and current carrying density is big, but driving current is larger；MOSFET driving power very littles, switch speed
Degree is fast, but conduction voltage drop is big, and current carrying density is small.IGBT combines the advantages of both the above device, drives work(
Rate is small and saturation pressure reduces.DC voltage is highly suitable to be applied for as 600V and the converter system of the above such as exchange
The fields such as motor, frequency converter, Switching Power Supply, lighting circuit, Traction Drive.
IGBT is also known as insulated gate bipolar transistor as novel power semiconductor, is power semiconductor device
The mainstream product of part the third technical revolution, be widely used in track traffic, Aero-Space, ship driving,
The industries such as the heavy-current controls such as intelligent grid, new energy, AC frequency conversion, wind-power electricity generation, motor transmission, automobile
Field.It comes out nearly 30 years, has accomplished 8 inch silicon wafers, 6500 volts of high level.Because it is in forceful electric power
Field extensive use, professional person have been well understood by.But it regrettably can not see state in the domestic market so far
Chip goods is produced, but flies million by German Infineon, Xi Menkang, Switzerland ABB, the U.S. IR, Fairchld,
Mitsubishi, Fuji, Toshiba, Sanken etc. ten are big, and overseas enterprise's product is monopolized, and is domestic IGBT cities
10 maximum enterprises of sales volume in.What application persons extremely felt uncertain asks：Why China does not manufacture
It must technically recognize that IGBT is with high content of technology, manufacture difficulty is big, this is hindered under us
It is determined to develop igbt chip one of the main reasons.It is reported that manufacturing process has identical part with integrated circuit,
But integrated circuit factory does not have the production technology of power electronic.Mentality of designing is also different.But just bear voltage
Thousands of volts will be reached by saying, silicon wafer thickness is thinned to 40 μm and less, considerably beyond integrated circuit, it is necessary to
The back process equipment of special corresponding exploitation, as energetic ion injection, laser annealing apparatus, Taiko are thinned and set
It is standby, proton irradiation equipment etc..
Because the igbt chip that import is bought in Chinese market is very easy, the IGBT in China in recent ten years
Application technology is gradually ripe, develops quickly.IGBT machine products be widely used in industry, traffic, communication,
The every field such as consumer electronics, industrial production efficiency is increased substantially, significantly save electric energy, reduce former material
Material consumption.Then it is increasing to high quality, multi items, low price IGBT demand, cause electric power
The hig diligence of electronic power components and Integrated circuit manufacturers.It is dying, it is necessary to voluntarily make to depend merely on import
Make.
In recent years, Chinese Enterprises were independent or joint power igbt chip and mould is made with oneself technical force
Transmitted during the message of block.They are：Zhuzhou south car, Shanghai Huahong -NEC, Xi'an love Parker's (Xi'an electric power
Electronics research institute), Jiangyin length electricity, the grand micro-, BYD in Jiangsu, the micro- electricity in Dongguang, Jilin Hua Wei, CSMC,
Beijing epoch people's core, the company such as Zhejiang Hua Xin, Jiaxing Si Da.Inspirer message transmits again and again, it is believed that
Domestic high pressure IGBT chip lists in the near future in several years, in the market does not have domestic igbt chip
Phenomenon will be gone for ever.
As trend is constantly thinned in silicon wafer thickness, practical application scene is needed to 0~30 μm of different depth position
Ion is doped effectively to activate, this allow for silicon substrate surface annealing rely only on traditional boiler tube will be unable to meet visitor
Family demand.In addition, newest investigation also found that the field introduces laser annealing technique and proton irradiation technique.
For proton irradiation technological process, its principle is as follows：It can be formed after hydrogen atom injection in lattice position
Room, room and proton interact to form the n-type doping of FS layers.When need to be formed the depth of FS layers compared with
When deep (more than 10 microns), it is corresponding needed for implanted dopant energy it is especially high (5MeV), proton due to compared with
Big penetration depth thus obtain a wide range of applications.
Multi-level annealing process can form back surface B uff N+ layers, Implantation Energy by one or many proton irradiations
100-500KeV, 300-400 degree are annealed；If by multiple proton irradiation, reduced with irradiation energy, dosage by
Cumulative big, i.e. N+Buffer is having bigger concentration close to collector area, and proton irradiation technique is generally used for
More than 10 μm junction depth anneal processes of high tension apparatus.
Fig. 1 show the relation schematic diagram of laser annealing wavelength and depth in the prior art.It is different for IGBT
Junction depth is annealed demand, and industry use 515 and 808nm wavelength at present, meets that 0.5~10 μm most of is annealed
Process requirements.And found in practical application, such as below 0.5 μm of shallow-layer and more than 10 μm this kind of new opplications
Demand occurs, and original laser annealing wavelength will run into process challenge, it is therefore desirable to introduces swashing of being more suitable for
Optical wavelength combines.
The content of the invention
The present invention proposes a kind of IGBT silicon chip back sides method for annealing and laser annealing system, adapts to the IGBT back sides
Annealing process researches and develops node, various lasers combination plus pre- hot function is released, to meet the specific IGBT back sides
Multi-level annealing process demand, there is provided a set of laser annealing system solution, substitute accurate point of high power
Sub- laser anneal and proton irradiation+low temperature furnace anneal process, realize different junction depth customization demands.
In order to achieve the above object, the present invention proposes a kind of IGBT silicon chip back sides method for annealing, including following step
Suddenly：
Complete the positive technique of IGBT silicon chips；
Reduction process is carried out to the silicon chip back side, is ground to required thickness；
Ion implanting is carried out to the silicon chip；
The silicon chip back side is made annealing treatment；
Metalized is carried out to the silicon chip back side；Wherein,
In annealing process is carried out to the silicon chip back side, when carrying out 0~0.5 μm of junction depth annealing,
Combined using 355+527nm lasers and carry out laser annealing processing, at more than 10 μm junction depth annealing of progress
During reason, combined using 808nm+940nm lasers and carry out laser annealing processing.
Further, it is described that silicon chip progress ion implanting step is included：IGBT silicon chip back sides field is cut successively
Only layer and shallow-layer electrode layer respectively carry out primary ions injection.
Further, the ion implanting that carried out to IGBT silicon chip back sides field cutoff layer is n-type doping injection.
Further, the IGBT silicon chip back sides field cutoff layer is trench gate field cut-off type layer.
Further, the ion implanting that carried out to shallow-layer electrode layer is p-type doping injection.
Further, the shallow-layer electrode layer emitter stage.
Further, when carrying out more than 10 μm junction depth annealings, in addition to the IGBT silicon chips
Bottom surface sucker take the pre-heat treatment.
In order to achieve the above object, the present invention also proposes a kind of IGBT silicon chip back sides laser annealing system, including：
First laser device and second laser, it is connected to corresponding optical system, laser controller,
And energy management system；
Slide holder with pre- hot function, it is connected to slide glass bench control system；
Synchronous control system, the slide glass bench control system and two laser controllers are connected to, wherein,
The laser wavelength is 355,527,808 or 940nm, at 0~0.5 μm of junction depth annealing of progress
During reason, the first laser device and second laser are combined using 355+527nm lasers, when carrying out 10 μ
When more than m junction depths make annealing treatment, the first laser device and second laser use 808nm+940nm laser
Device combines.
Further, the laser type is solid state laser or semiconductor laser.
Further, when carrying out more than 10 μm junction depths annealing, using slide holder sucker pre-heating system,
The pre-heat treatment is taken to the bottom surface sucker of IGBT silicon chips.
IGBT silicon chip back sides method for annealing and laser annealing system proposed by the present invention, carried on the back according to different IGBT
Face annealing process, various lasers combination plus pre- hot function are released, to meet that the specific IGBT back sides are multi-level
Annealing process demand, laser annealing technique of the invention mainly employ solid and semiconductor laser, laser
Device wavelength is 355,527,808 or 940nm, is optimized by optical system, alternative excimer laser
With proton irradiation+low temperature furnace process, 0~10 μm of annealing demand is realized.
Brief description of the drawings
Fig. 1 show the relation schematic diagram of laser annealing wavelength and depth in the prior art.
Fig. 2 show the IGBT silicon chip back side method for annealing flow charts of present pre-ferred embodiments.
Fig. 3 show the IGBT silicon chip back side laser annealing system structural representations of present pre-ferred embodiments.
Fig. 4 show the dual-wavelength laser annealing process emulation schematic diagram of present pre-ferred embodiments.
Embodiment
The embodiment of the present invention is provided below in conjunction with accompanying drawing, but the invention is not restricted to following embodiment party
Formula.According to following explanation and claims, advantages and features of the invention will become apparent from.It should be noted that
Accompanying drawing uses using very simplified form and non-accurately ratio, is only used for convenience, lucidly aids in
Illustrate the purpose of the embodiment of the present invention.
Fig. 2 is refer to, Fig. 2 show the IGBT silicon chip back side method for annealing flows of present pre-ferred embodiments
Figure.The present invention proposes a kind of IGBT silicon chip back sides method for annealing, comprises the following steps：
Step S100：Complete the positive technique of IGBT silicon chips；
Step S200：Reduction process is carried out to the silicon chip back side, is ground to required thickness；
Step S300：Ion implanting is carried out to the silicon chip；
Step S400：The silicon chip back side is made annealing treatment；
Step S500：Metalized is carried out to the silicon chip back side, wherein
In annealing process is carried out to the silicon chip back side, when carrying out 0~0.5 μm of junction depth annealing,
Combined using 355+527nm lasers and carry out laser annealing processing, at more than 10 μm junction depth annealing of progress
During reason, combined using 808nm+940nm lasers and carry out laser annealing processing.
After completing IGBT silicon chip back side annealing process flows, it is tested and cutting technique is handled.
It is described that silicon chip progress ion implanting step is included according to present pre-ferred embodiments：Successively to IGBT
Silicon chip back side field cutoff layer and shallow-layer electrode layer respectively carry out primary ions injection.It is described to IGBT silicon chip back sides field
Cutoff layer carries out ion implanting and injected for n-type doping, and the IGBT silicon chip back sides field cutoff layer is trench gate
Field cut-off type layer.The ion implanting that carried out to shallow-layer electrode layer is that p-type doping is injected, the shallow-layer electrode
Layer emitter stage.
When carrying out 0~0.5 μm of junction depth annealing, progress laser is combined using 355+527nm lasers and moved back
Fire processing.Traditional boiler tube annealing way, can not adapt to shallow-layer annealing process demand, and generally use 308nm is short
Long wavelength laser (being used to BSI anneal) or 10.6 μm of CO2 lasers (being used to USJ anneal), and this
The 355+527nm wavelength combinations that innovation uses, have more preferable Technological adaptability for IGBT fields.
When carrying out more than 10 μm junction depth annealings, swashed using the combination of 808nm+940nm lasers
Photo-annealing processing.Deep layer annealing process demand, generally use proton irradiation+low temperature boiler tube, but the equipment group
It is too high to close equipment cost, is limited to the technology barriers of proton irradiation equipment, and the present invention innovates what is used
This kind of near-infrared wavelength combinations of 808+940nm, can equally realize big junction depth IGBT annealing process demands.
Further, when carrying out more than 10 μm junction depth annealings, in addition to the IGBT silicon chips
Bottom surface sucker take the pre-heat treatment.Bottom chuck is to consider to realize the gradient distribution of deep layer annealing, that is, is set
When laser annealing action face is 0 μm, more than 10 μm junction depths of annealing are, it is necessary to the aspect (such as 10 μm)
Section temperature reaches 800 degree or more, could be to effective activation of Doped ions.In practice, it is desirable to
(it is less than 300 degree) on the premise of bottom-side metal layer is not influenceed, bottom surface temperature is heated to 200~250 degree,
The purpose so done can optimize temperature with depth change curve, annealing laser device total energy density needed for reduction
Demand.
Fig. 3 is refer to, Fig. 3 show the IGBT silicon chip back side laser annealing systems of present pre-ferred embodiments
Structural representation.The present invention also proposes a kind of IGBT silicon chip back sides laser annealing system, including：
First laser device and second laser, it is connected to corresponding optical system, laser controller,
And energy management system；
Slide holder with pre- hot function, it is connected to slide glass bench control system；
Synchronous control system, the slide glass bench control system and two laser controllers are connected to, wherein,
The laser wavelength is 355,527,808 or 940nm, at 0~0.5 μm of junction depth annealing of progress
During reason, the first laser device and second laser are combined using 355+527nm lasers, when carrying out 10 μ
When more than m junction depths make annealing treatment, the first laser device and second laser use 808nm+940nm laser
Device combines.
Described two laser controllers control first laser device and second laser to send different wave length respectively
Laser, and incided after the optical system processing of laser on IGBT silicon chips on slide holder, it is described to swash
The laser that light device is launched it by energy management system carries out energy monitoring, and the slide holder passes through slide glass
Bench control system controls, and the synchronous control system carries out same to laser controller and slide glass bench control system
Step control.
According to present pre-ferred embodiments, the laser type is solid state laser or semiconductor laser.
When carrying out 0~0.5 μm of junction depth annealing, the first laser device and second laser use
355+527nm lasers combine, and realize shallow-layer annealing process.Made annealing treatment when carrying out more than 10 μm junction depths
When, the first laser device and second laser are combined using 808nm+940nm lasers, realize that deep layer is moved back
Ignition technique.Further, when carrying out more than 10 μm junction depth annealings, preheated using slide holder sucker
System, the pre-heat treatment is taken to the bottom surface sucker of IGBT silicon chips, realize the annealing temperature gradient distribution of optimization deep layer
Demand.
The progress effect of the present invention is to use multiple-wavelength laser combination collocation, a set of laser annealing system
Solution realizes 0~30 μm of different junction depth annealing demand.A solution is proposed, is suitable for complete
IGBT back sides annealing process line, suitable laser is selected to combine, to meet that client difference IGBT products are joined
Number demand, the extension of realization.Main laser device combination selection thinking for：
1st, software emulation is passed through：It is preliminary to choose the laser type for meeting process requirements；
2nd, batch process is tested：Substep carries out packet DEMO annealing and verified, finds suitable technique
Window；
3rd, annealing parameter and test data are arranged：The results such as SRP, SIMS and ECV are analyzed, to laser
Assembled scheme feeds back.
Although the present invention is disclosed above with preferred embodiment, so it is not limited to the present invention.The present invention
Those of ordinary skill in the art, it is without departing from the spirit and scope of the present invention, each when that can make
The change and retouching of kind.Therefore, the scope of protection of the present invention is defined by those of the claims.
Claims (10)
1. a kind of IGBT silicon chip back sides method for annealing, it is characterised in that comprise the following steps：
Complete the positive technique of IGBT silicon chips；
Reduction process is carried out to the silicon chip back side, is ground to required thickness；
Ion implanting is carried out to the silicon chip；
The silicon chip back side is made annealing treatment；
Metalized is carried out to the silicon chip back side；Wherein,
In annealing process is carried out to the silicon chip back side, when carrying out 0~0.5 μm of junction depth annealing,
Combined using 355+527nm lasers and carry out laser annealing processing, at more than 10 μm junction depth annealing of progress
During reason, combined using 808nm+940nm lasers and carry out laser annealing processing.
2. IGBT silicon chip back sides method for annealing according to claim 1, it is characterised in that described right
Silicon chip, which carries out ion implanting step, to be included：IGBT silicon chip back sides field cutoff layer and shallow-layer electrode layer are respectively entered successively
Row primary ions are injected.
3. IGBT silicon chip back sides method for annealing according to claim 2, it is characterised in that described right
IGBT silicon chip back sides field cutoff layer carries out ion implanting and injected for n-type doping.
4. IGBT silicon chip back sides method for annealing according to claim 2, it is characterised in that the IGBT
Silicon chip back side field cutoff layer is trench gate field cut-off type layer.
5. IGBT silicon chip back sides method for annealing according to claim 2, it is characterised in that described right
It is p-type doping injection that shallow-layer electrode layer, which carries out ion implanting,.
6. IGBT silicon chip back sides method for annealing according to claim 2, it is characterised in that described shallow
Layer electrode layer emitter stage.
7. IGBT silicon chip back sides method for annealing according to claim 1, it is characterised in that work as progress
During more than 10 μm junction depth annealings, in addition to the bottom surface sucker of the IGBT silicon chips is taken at preheating
Reason.
A kind of 8. IGBT silicon chip back sides laser annealing system, it is characterised in that including：
First laser device and second laser, it is connected to corresponding optical system, laser controller,
And energy management system；
Slide holder with pre- hot function, it is connected to slide glass bench control system；
Synchronous control system, the slide glass bench control system and two laser controllers are connected to, wherein,
The laser wavelength is 355,527,808 or 940nm, at 0~0.5 μm of junction depth annealing of progress
During reason, the first laser device and second laser are combined using 355+527nm lasers, when carrying out 10 μ
When more than m junction depths make annealing treatment, the first laser device and second laser use 808nm+940nm laser
Device combines.
9. IGBT silicon chip back sides laser annealing system according to claim 8, it is characterised in that institute
It is solid state laser or semiconductor laser to state laser type.
10. IGBT silicon chip back sides laser annealing system according to claim 8, it is characterised in that when
When carrying out more than 10 μm junction depth annealings, using slide holder sucker pre-heating system, to IGBT silicon chips
Bottom surface sucker takes the pre-heat treatment.
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Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004039984A (en) * | 2002-07-05 | 2004-02-05 | Sumitomo Heavy Ind Ltd | Manufacturing method for semiconductor device using laser irradiation |
| US20090227121A1 (en) * | 2005-08-03 | 2009-09-10 | Phoeton Corp. | Semiconductor device manufacturing method and semiconductor device manufacturing system |
| JP2010141136A (en) * | 2008-12-11 | 2010-06-24 | Fuji Electric Systems Co Ltd | Method of manufacturing semiconductor device |
| JP2010171057A (en) * | 2009-01-20 | 2010-08-05 | Denso Corp | Semiconductor device, and method of manufacturing the same |
| CN102983159A (en) * | 2008-01-23 | 2013-03-20 | 富士电机株式会社 | Semiconductor device and method of producing the same |
| CN103050401A (en) * | 2012-12-11 | 2013-04-17 | 上海华虹Nec电子有限公司 | Back process method of IGBT (insulated gate bipolar transistor) device |
| CN103489764A (en) * | 2012-06-13 | 2014-01-01 | 住友重机械工业株式会社 | Semiconductor device manufacturing method and laser annealing apparatus |
| CN104392914A (en) * | 2014-12-03 | 2015-03-04 | 苏州德龙激光股份有限公司 | Dual-wavelength laser annealing device and method thereof |
-
2016
- 2016-05-31 CN CN201610378219.4A patent/CN107452619B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004039984A (en) * | 2002-07-05 | 2004-02-05 | Sumitomo Heavy Ind Ltd | Manufacturing method for semiconductor device using laser irradiation |
| US20090227121A1 (en) * | 2005-08-03 | 2009-09-10 | Phoeton Corp. | Semiconductor device manufacturing method and semiconductor device manufacturing system |
| CN102983159A (en) * | 2008-01-23 | 2013-03-20 | 富士电机株式会社 | Semiconductor device and method of producing the same |
| JP2010141136A (en) * | 2008-12-11 | 2010-06-24 | Fuji Electric Systems Co Ltd | Method of manufacturing semiconductor device |
| JP2010171057A (en) * | 2009-01-20 | 2010-08-05 | Denso Corp | Semiconductor device, and method of manufacturing the same |
| CN103489764A (en) * | 2012-06-13 | 2014-01-01 | 住友重机械工业株式会社 | Semiconductor device manufacturing method and laser annealing apparatus |
| CN103050401A (en) * | 2012-12-11 | 2013-04-17 | 上海华虹Nec电子有限公司 | Back process method of IGBT (insulated gate bipolar transistor) device |
| CN104392914A (en) * | 2014-12-03 | 2015-03-04 | 苏州德龙激光股份有限公司 | Dual-wavelength laser annealing device and method thereof |
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