CN107450105B - Infrared geminate transistor detection device and system - Google Patents
Infrared geminate transistor detection device and system Download PDFInfo
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- CN107450105B CN107450105B CN201710779954.0A CN201710779954A CN107450105B CN 107450105 B CN107450105 B CN 107450105B CN 201710779954 A CN201710779954 A CN 201710779954A CN 107450105 B CN107450105 B CN 107450105B
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Abstract
The invention provides an infrared pair tube detection device and a system, the device comprises a transmitting circuit, a receiving circuit, a time delay circuit and a comparison circuit, the receiving circuit comprises a bias resistor component and a receiving tube which are connected with each other, the bias resistor component comprises at least 2 resistors which are connected in series, the transmitting circuit transmits infrared rays, the receiving tube of the receiving circuit works in a linear region, the cathode of the receiving tube is connected with the bias resistor, the anode of the receiving tube is grounded, the forward input end of the comparison circuit is connected between the 2 resistors in the bias resistor component, the reverse input end of the comparison circuit is connected with the cathode of the receiving tube, due to the existence of the bias resistor and the time delay circuit, when the infrared rays irradiated to the receiving tube change, a time delay voltage difference exists between the forward input end and the reverse input end of the comparison circuit, namely, the comparison circuit can output a high level or a low level corresponding to the time delay voltage difference, whether an object blocks the infrared rays irradiated to the receiving tube or not is accurately detected, and therefore infrared detection of high-speed moving objects is achieved.
Description
Technical Field
The invention relates to the technical field of infrared detection, in particular to an infrared pair tube detection device and system.
Background
The infrared pair tube is a general name of an infrared transmitting tube and an infrared receiving tube, and is a photoelectric sensor commonly used for automatic detection.
The conduction current of the infrared receiving tube changes with the intensity of incident infrared light. When no barrier exists between the transmitting tube and the receiving tube, the receiving tube is conducted; when no infrared light irradiates or is shielded by an obstacle, the infrared receiving tube is cut off.
It is the infrared pair tube with the above characteristics that it is commonly used to detect the position of an object and some basic speed measurement, but it cannot perform infrared detection on a high-speed moving object.
Disclosure of Invention
Therefore, it is necessary to provide an infrared pair tube detection device and system for performing infrared detection on a high-speed moving object, aiming at the problem that the traditional infrared pair tube cannot perform infrared detection on the high-speed moving object.
An infrared pair tube detection device comprises a transmitting circuit, a receiving circuit, a time delay circuit and a comparison circuit;
the receiving circuit comprises a bias resistor component and a receiving tube which are connected with each other, the bias resistor component comprises at least 2 resistors which are connected in series, the cathode of the receiving tube is connected with the bias resistor component, and the anode of the receiving tube is grounded;
the transmitting circuit transmits infrared light so that a receiving tube in the receiving circuit works in a linear region, the input end of the delay circuit is connected between 2 resistors in the bias resistor assembly, the forward input end of the comparison circuit is connected with the output end of the delay circuit, the reverse input end of the comparison circuit is connected with the negative electrode of the receiving tube, and the output end of the comparison circuit outputs an infrared detection signal.
The invention relates to an infrared geminate transistor detection device, which comprises a transmitting circuit, a receiving circuit, a time delay circuit and a comparison circuit, wherein the receiving circuit comprises a bias resistor component and a receiving tube which are connected with each other, the bias resistor component comprises at least 2 resistors which are connected in series, the transmitting circuit transmits infrared rays, the receiving tube of the receiving circuit works in a linear region, the cathode of the receiving tube is connected with the bias resistor, the anode of the receiving tube is grounded, the forward input end of the comparison circuit is connected between the 2 resistors in the bias resistor component, the reverse input end of the comparison circuit is connected with the cathode of the receiving tube, due to the existence of the bias resistor and the time delay circuit, when the infrared rays irradiated to the receiving tube change, a time delay voltage difference exists between the forward input end and the reverse input end of the comparison circuit, namely, the voltage difference circuit can output a high level or a low level corresponding to the time delay, so as to accurately detect whether an object blocks the infrared rays irradiated to the receiving tube, thus realizing the infrared detection of high-speed moving objects.
In addition, the invention also provides an infrared pair tube detection system, which comprises an MCU and at least 2 infrared pair tube detection devices, wherein the MCU is respectively connected with the output ends of the comparison circuits in the infrared pair tube detection devices.
The invention relates to an infrared pair tube detection system, which comprises an MCU (microprogrammed control unit) and at least 2 infrared pair tube detection devices, wherein receiving tubes of receiving circuits in the infrared pair tube detection devices work in a linear region, the cathodes of the receiving tubes are connected with a bias resistor, the anodes of the receiving tubes are grounded, the forward input end of a comparison circuit is connected between 2 resistors in a bias resistor assembly, the reverse input end of the comparison circuit is connected with the cathode of the receiving tube, and due to the existence of the bias resistor and a delay circuit, when infrared rays irradiated to the receiving tubes change, a delay voltage difference exists between the forward input end and the reverse input end of the comparison circuit, namely the comparison circuit can output a high level or a low level corresponding to the delay voltage difference, so as to accurately detect whether an object shields the infrared rays irradiated to the receiving tubes, and further realize the infrared detection of high-speed moving objects.
Drawings
FIG. 1 is a basic circuit diagram of a conventional infrared pair transistor;
FIG. 2 is a schematic diagram showing output signals of various states of a conventional infrared receiving tube;
FIG. 3 is a schematic structural diagram of a first embodiment of an infrared pair tube detection apparatus according to the present invention;
FIG. 4 is a schematic circuit diagram of a second embodiment of the infrared pair detection apparatus according to the present invention;
FIG. 5 is a schematic diagram of an output signal waveform in an example of an application of the infrared pair tube detecting apparatus according to the present invention;
FIG. 6 is a schematic structural diagram of a first embodiment of an infrared pair tube detection system according to the present invention;
fig. 7 is a schematic structural diagram of an infrared pair tube detection system according to a second embodiment of the present invention.
Detailed Description
In order to explain the technical scheme of the infrared pair tube detection device and the scientific theory basis based on the same in detail, the following will explain the working principle of the infrared pair tube and the significant effect of the infrared pair tube detection device in detail by referring to fig. 1 and fig. 2 for the purpose of explaining the traditional infrared pair tube.
As shown in fig. 1, in a common basic circuit of an infrared pair transistor, Rd is a current limiting resistor of an infrared emitting transistor IRLED, and adjusting Rd can control the infrared light emission intensity of the emitting transistor. Rq is the bias resistance of the infrared receiving tube Q1, and point A is the output signal of the receiving tube, and is usually connected with a post detection circuit or a singlechip for use. As shown in fig. 2, when the receiving tube is not irradiated by infrared light or is shielded by an obstacle, the receiving tube is in a cut-off state, the current is extremely weak, and the voltage at point a is substantially equal to the VCC supply voltage; when the infrared radiation received by the receiving tube is strong enough, the infrared radiation enters a saturation area, the receiving tube can pass larger current, and the voltage of the point A is basically equal to 0; when the infrared light intensity is in a certain range, the receiving tube can work in a linear region, and the voltage of the point A is reduced along with the increase of the infrared light intensity in the voltage range of 0V and VCC. In addition, when the infrared light is instantly shielded by the object, the voltage at the point A only forms a pulse signal with smaller amplitude, and the shorter the shielding time is, the smaller the pulse amplitude change is.
At present, there are three common methods for detecting infrared receiver tube signals: the first method is that the electric signal of the infrared receiving tube is directly connected to the singlechip to identify the high-low logic level, the method requires that the working current of the infrared transmitting tube is large enough, strong infrared light is emitted to make the receiving tube capable of being saturated and conducted, and the receiving tube needs to work in a cut-off state when being shielded by an obstacle, the method has harsh application conditions and very limited application occasions; the second is to convert the signal of the receiving tube into digital logic level through an amplifying circuit or a comparator circuit and output the digital logic level to the singlechip for identification. The method can effectively overcome the defects of the previous method, but when a plurality of groups of geminate transistors work, because the initial state of each receiving tube working in the current area and the voltage variation amount subjected to instant shielding have certain difference, the amplifying circuit with fixed amplification factor and the voltage comparator circuit with fixed voltage threshold value can not process the situation; and the third is to use A/D sampling method to detect the real-time change of the analog voltage signal of the receiving tube, so as long as there is signal change on the receiving tube, it can be determined whether there is obstruction. However, when the number of the infrared pair tubes is large, the requirement on the A/D resource of the single chip microcomputer is high, the detection speed is low, and the object moving at a high speed cannot be detected.
Based on the above basic principle and the defects of the infrared pair transistors for detecting moving objects, the present invention provides an infrared pair transistor detection apparatus, as shown in fig. 3, which includes a transmitting circuit 110, a receiving circuit 120, a delay circuit 130 and a comparing circuit 140;
the receiving circuit 120 comprises a bias resistor component 122 and a receiving tube Q1 which are connected with each other, the bias resistor component 122 comprises at least 2 resistors which are connected in series, the negative electrode of the receiving tube Q1 is connected with the bias resistor component 122, and the positive electrode of the receiving tube Q1 is grounded;
the transmitting circuit 110 transmits infrared light to make the receiving tube Q1 in the receiving circuit 120 work in a linear region, the input end of the delay circuit 130 is connected between 2 resistors in the bias resistor assembly 122, the positive input end of the comparing circuit 140 is connected with the output end of the delay circuit 130, the negative input end of the comparing circuit 140 is connected with the negative electrode of the receiving tube Q1, and the output end of the comparing circuit 140 outputs an infrared detection signal.
The transmitting circuit 110 is used for transmitting infrared rays, and the transmitted infrared rays irradiate the receiving tube Q1 in the receiving circuit 120, and the infrared rays with different intensities can be irradiated in three different working areas, namely a cut-off working area, a saturation working area and a linear working area, of the receiving tube Q1, wherein the transmitting circuit 110 adjusts the intensity of the transmitted infrared rays so that the receiving tube Q1 irradiated by the infrared rays works in the linear working area. As shown in fig. 4, in one embodiment, the transmitting circuit 110 includes a first resistor R1 and a transmitting tube IRLED, one end of the first resistor R1 is connected to an external power source, the other end of the first resistor R1 is connected to the anode of the transmitting tube IRLED, the cathode of the transmitting tube IRLED is grounded, and the intensity of infrared rays emitted by the transmitting tube IRLED can be adjusted by adjusting the resistance of the first resistor R1.
The receiving circuit 120 is used for receiving the infrared rays emitted by the emitting circuit 110, and generating and outputting a corresponding electrical signal when the intensity of the received infrared rays has sudden change (there is an object block). The receiving circuit 120 comprises a bias resistor component 122 and a receiving tube Q1 which are connected with each other, the bias resistor component 122 comprises at least 2 resistors which are connected in series, the negative electrode of the receiving tube Q1 is connected with the bias resistor component 122, and the positive electrode of the receiving tube Q1 is grounded. The forward input terminal of the comparing circuit 140 is connected between any 2 resistors in the offset resistor component 122 through the delay circuit 130, and the reverse input terminal of the comparing circuit 140 is connected to the negative electrode of the receiving tube Q1, that is, to the end of the last resistor in the offset resistor component 122 close to the receiving tube Q1, so that at least one resistor must exist between the forward input terminal and the reverse input terminal of the comparing circuit 140, and a voltage difference must exist between the forward input terminal and the reverse input terminal of the comparing circuit 140. As shown in fig. 4, in one embodiment, the bias resistor assembly 122 includes a second resistor R2 and a third resistor R3, the other end of the second resistor R2 is connected to one end of the third resistor R3, and the other end of the third resistor R3 is connected to the negative terminal of the receiving tube Q1. In the present embodiment, the forward input terminal of the comparison circuit 140 is connected between the second resistor R2 and the third resistor R3, the discovery input terminal of the comparison circuit 140 is connected between the third resistor R3 and the receiving tube Q1, and the third resistor R3 exists between the forward input terminal and the reverse input terminal of the comparison circuit 140, i.e., a voltage difference between the two terminals over the third resistor R3 exists.
The delay circuit 130 is configured to generate a delay signal, one end of the delay circuit 130 is connected between 2 resistors in the bias resistor component 122, the other end of the delay circuit 130 is connected to a positive input end of the comparison circuit 140, and a signal input to the delay circuit 130 is output to the positive input end of the comparison circuit 140 after being delayed. As shown in fig. 4, in one embodiment, the delay circuit 130 includes a fourth resistor R4 and a capacitor C1, one end of the fourth resistor R4 is connected to the second resistor R2 and the third resistor R3, the other end of the fourth resistor R4 is connected to one end of the capacitor C1, and the other end of the capacitor C1 is grounded.
The comparison circuit 140 is configured to compare signals (voltages) at the positive input terminal and the negative input terminal, and output high and low levels according to a voltage difference between the positive input terminal and the negative input terminal, that is, the voltage difference is represented by the high and low levels, so that even if the voltage value is small, the voltage value can be accurately represented, and the process can be understood as a process from "quantitative" to "qualitative". If before, when the traditional infrared geminate transistor is used for carrying out infrared detection on a high-speed object, the detection cannot be carried out probably because the voltage difference generated by object shielding is small and the time pole is short, and here, the condition that infrared rays are shielded by the object is accurately represented in a high-low level mode without considering the magnitude of the voltage difference. As shown in fig. 4, in one embodiment, the comparing circuit 140 includes a comparator and a fifth resistor R5, a positive input terminal of the comparator is connected to the delay circuit 130 and one end of the fifth resistor R5, a negative input terminal of the comparator is connected to the negative terminal of the receiving transistor Q1 in the receiving circuit 120, an output terminal of the comparator is connected to the other end of the fifth resistor R5, and a hysteresis comparator is configured between the fifth resistor R5 and the comparator, so that the output signal is stably switched. Furthermore, the comparison circuit 140 further includes a sixth resistor R6, one end of the sixth resistor R6 is connected to the output terminal of the comparator, and the other end of the sixth resistor R6 is connected to the external power source. The sixth resistor R6 is a pull-up resistor, and the comparator can be LM 339.
The infrared pair tube detection device of the invention comprises a transmitting circuit 110, a receiving circuit 120, a delay circuit 130 and a comparison circuit 140, wherein the receiving circuit 120 comprises a bias resistor component 122 and a receiving tube Q1 which are connected with each other, the bias resistor component 122 comprises at least 2 resistors which are connected in series, the transmitting circuit 110 transmits infrared rays, the receiving tube Q1 of the receiving circuit 120 works in a linear region, the negative electrode of the receiving tube Q1 is connected with the bias resistor, the positive electrode of the receiving tube Q1 is grounded, the positive input end of the comparison circuit 140 is connected between the 2 resistors in the bias resistor component 122, the reverse input end of the comparison circuit 140 is connected with the negative electrode of the receiving tube Q1, due to the existence of the bias resistor and the delay circuit 130, when the infrared rays irradiated to the receiving tube Q1 change, a delay voltage difference exists between the positive input end and the reverse input end of the comparison circuit 140, namely, the comparison circuit 140 can output a high level or a low level corresponding to the delay voltage difference, whether an object blocks the infrared rays irradiated to the receiving tube Q1 or not is accurately detected, and therefore infrared detection of high-speed moving objects is achieved.
To explain the technical solution of the infrared pair tube detecting device of the present invention in further detail, a specific application example will be adopted below, and is described in detail with reference to fig. 4.
As shown in fig. 4, in a specific application example, the infrared pair tube detection apparatus of the present invention includes a transmitting circuit 110, a receiving circuit 120, a delay circuit 130, and a comparing circuit 140, where the transmitting circuit 110 includes a first resistor R1 and a transmitting tube IRLED, the receiving circuit 120 includes a bias resistor assembly and a receiving tube Q1, the bias resistor assembly includes a second resistor R2 and a third resistor R3 connected in series, the delay circuit 130 includes a fourth resistor R4 and a capacitor C1, and the comparing circuit 140 includes a comparator, a fifth resistor R5, and a sixth resistor R6;
one end of the first resistor R1 is connected with a power supply VCC, the other end of the first resistor R1 is connected with the anode of the emission tube IRLED, and the cathode of the emission tube IRLED is grounded; one end of the second resistor R2 is connected with a power supply VCC, the other end of the second resistor R2 is connected with one end of a third resistor R3, the other end of the third resistor R3 is connected with the negative electrode of a receiving tube Q1, and the positive electrode of the receiving tube Q1 is grounded; one end of a fourth resistor R4 is connected to a point A between the second resistor R2 and the third resistor R3, the other end of the fourth resistor R4 and one end of a capacitor C1 are connected to a point C of a positive input end of a comparator, the other end of the capacitor C1 is grounded, a reverse input end of the comparator is connected to a point B between the third resistor R3 and a negative electrode of a receiving tube Q1, one end of a fifth resistor R5 is connected to the positive input end of the comparator, the other end of the fifth resistor R5 is connected to an output end of the comparator, one end of a sixth resistor R6 is connected to a point D of an output end of the comparator, and the other end of the sixth resistor R6 is connected to a power supply VCC.
The first resistor R1 limits the current of the transmitting tube IRLED, so that after the infrared ray intensity emitted by the transmitting tube IRLED irradiates the receiving tube Q1, the receiving tube Q1 is in a linear working region, the bias resistor assembly comprises a second resistor R2 and a third resistor R3, a voltage difference above the third resistor R3 exists between the forward input end and the reverse input end of the comparator, and a signal (signal) at the forward input end is processed by the delay circuit 130. When the receiving tube is not shielded, even if the voltages of the B points of different receiving tubes are inconsistent, the voltage of the A point can be ensured to be slightly larger than the voltage of the B point, the signal of the A point is connected to an RC delay circuit formed by a fourth resistor R4 and a capacitor C, and the voltage of the C point is approximately equal to the voltage of the A point under the condition that the infrared illumination intensity of the receiving tube is unchanged; when the infrared illumination intensity changes, the signal at the point C lags behind the change of the voltage signal at the point A. The point B and the point C are respectively connected to the negative end input and the positive end input of the comparator, when the voltage of the point B is higher than the voltage C, the comparator outputs a signal D, the point D outputs 0, and when the voltage C is higher than the voltage B, the point D outputs 1. The output end D point and the positive end input C point which are connected with the fifth resistor R5 form a hysteresis comparator, so that the output signal is stably phase-changed, in addition, the comparator can select LM339 which is deconstructed by the open-drain output, and therefore a pull-up resistor R6 is arranged at the D point.
As shown in fig. 5, the signal characteristics of the infrared pair tube detection apparatus of the present invention are signal variation relationships at B, C, D points, respectively, and when an object is occluded, even if the object is occluded instantaneously, the infrared pair tube detection apparatus of the present invention can respond quickly and convert the signal into a digital logic level.
As shown in fig. 6, an infrared pair of tube detection system includes an MCU and at least 2 infrared pair of tube detection devices as described above, where the MCU is connected to the output terminals of the comparison circuits in the infrared pair of tube detection devices respectively.
The invention relates to an infrared pair tube detection system, which comprises an MCU (microprogrammed control unit) and at least 2 infrared pair tube detection devices, wherein receiving tubes of receiving circuits in the infrared pair tube detection devices work in a linear region, the cathodes of the receiving tubes are connected with a bias resistor, the anodes of the receiving tubes are grounded, the forward input end of a comparison circuit is connected between 2 resistors in a bias resistor assembly, the reverse input end of the comparison circuit is connected with the cathode of the receiving tube, and due to the existence of the bias resistor and a delay circuit, when infrared rays irradiated to the receiving tubes change, a delay voltage difference exists between the forward input end and the reverse input end of the comparison circuit, namely the comparison circuit can output a high level or a low level corresponding to the delay voltage difference, so as to accurately detect whether an object shields the infrared rays irradiated to the receiving tubes, and further realize the infrared detection of high-speed moving objects.
As shown in fig. 7, in one embodiment, the infrared pair tube detection system further includes an LED lamp set, where the LED lamp set includes at least 2 LED lamps, the number of the LED lamps is the same as that of the infrared pair tube detection devices, and each LED lamp is connected to the MCU.
In this embodiment, the infrared pair tube detection system further includes an LED lamp set, where the LED lamp set includes a plurality of LED lamps, and the number of the LED lamps is the same as that of the infrared pair tube detection devices, that is, each LED lamp corresponds to a single infrared pair tube detection device, and the LEDs indicate that the corresponding infrared pair tube detection device outputs a high/low level in a flashing/extinguishing manner, so as to further indicate whether there is an object shielding on the infrared path between the transmitting tube and the receiving tube.
As shown in fig. 7, in one embodiment, the infrared pair tube detection system of the present invention further includes a power supply, and the power supply is connected to the MCU.
The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.
Claims (10)
1. An infrared pair tube detection device is characterized by comprising a transmitting circuit, a receiving circuit, a time delay circuit and a comparison circuit;
the receiving circuit comprises a bias resistor component and a receiving tube which are connected with each other, the bias resistor component comprises at least 2 resistors which are connected in series, the negative pole of the receiving tube is connected with the bias resistor component, and the positive pole of the receiving tube is grounded;
the transmitting circuit transmits infrared rays to enable the receiving tube in the receiving circuit to work in a linear region, the input end of the delay circuit is connected between 2 resistors in the bias resistor assembly, the positive input end of the comparison circuit is connected with the output end of the delay circuit, the negative input end of the comparison circuit is connected with the negative electrode of the receiving tube, and the output end of the comparison circuit outputs an infrared detection signal;
the bias resistor assembly comprises a second resistor and a third resistor, one end of the second resistor is connected with an external power supply, the other end of the second resistor is connected with one end of the third resistor, and the other end of the third resistor is connected with the negative electrode of the receiving tube;
the comparison circuit comprises a comparator and a fifth resistor, wherein a forward input end of the comparator is connected with the delay circuit and one end of the fifth resistor respectively, a reverse input end of the comparator is connected with a negative electrode of a receiving tube in the receiving circuit, and an output end of the comparator is connected with the other end of the fifth resistor.
2. The infrared pair tube detecting device of claim 1, wherein the transmitting circuit comprises a first resistor and a transmitting tube, one end of the first resistor is connected with an external power supply, the other end of the first resistor is connected with an anode of the transmitting tube, and a cathode of the transmitting tube is grounded.
3. The infrared pair detection device of claim 1, wherein the delay circuit comprises a fourth resistor and a capacitor, one end of the fourth resistor is connected to the second resistor and the third resistor, the other end of the fourth resistor is connected to one end of the capacitor, and the other end of the capacitor is grounded.
4. The infrared pair detection device of claim 1, wherein the comparison circuit further comprises a sixth resistor, one end of the sixth resistor is connected to the output terminal of the comparator, and the other end of the sixth resistor is connected to an external power supply.
5. The infrared pair detection apparatus of claim 1, wherein the comparator comprises a comparator of type LM 339.
6. The infrared pair detection device as claimed in claim 1, wherein the transmission circuit is further configured to adjust intensity of the self-emitted infrared ray so that the receiving tube operates in a linear region in the receiving circuit.
7. An infrared pair of tube detection system, characterized by, including MCU and at least 2 according to claim 1-6 in the infrared pair of tube detection device of any claim, the said MCU connects with each said infrared pair of tube detection device the output end of the comparison circuit separately.
8. The infrared pair of transistor detection system of claim 7, further comprising an LED lamp set, wherein the LED lamp set comprises at least 2 LED lamps, the number of the LED lamps is the same as the number of the infrared pair of transistor detection devices, and each LED lamp is connected with the MCU.
9. The infrared pair detection system of claim 7, further comprising a power supply, the power supply being connected to the MCU.
10. The infrared pair of transistor detection system of claim 7, further comprising an LED lamp bank, wherein the LED lamp bank comprises 2 LED lamps, the number of infrared pair of transistor detection devices is 2, and each LED lamp is connected to the MCU.
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| CN108096597B (en) * | 2018-01-08 | 2020-06-23 | 厦门慧晶智能科技有限公司 | Intelligent automatic disinfection method for tool rest |
| CN108121016A (en) * | 2018-01-24 | 2018-06-05 | 深圳市信威电子有限公司 | Enter paper detection sensor and device |
| CN108761483A (en) * | 2018-05-24 | 2018-11-06 | 苏州经贸职业技术学院 | A kind of infrared obstacle avoidance detection module |
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| US4215278A (en) * | 1975-06-02 | 1980-07-29 | Commissariat A L'energie Atomique | Detector for abnormal phenomena |
| CN101093983A (en) * | 2006-06-21 | 2007-12-26 | 夏普株式会社 | Comparing circuit and infrared receiver |
| CN101534111A (en) * | 2008-03-12 | 2009-09-16 | 鸿富锦精密工业（深圳）有限公司 | Automatic control circuit of display power supply |
| CN207396767U (en) * | 2017-09-01 | 2018-05-22 | 珠海市杰理科技股份有限公司 | Infrared tube detection device and system |
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| US4215278A (en) * | 1975-06-02 | 1980-07-29 | Commissariat A L'energie Atomique | Detector for abnormal phenomena |
| US4032777A (en) * | 1976-03-29 | 1977-06-28 | Mccaleb Robert Earl | Photomeric monitoring device |
| CN101093983A (en) * | 2006-06-21 | 2007-12-26 | 夏普株式会社 | Comparing circuit and infrared receiver |
| CN101534111A (en) * | 2008-03-12 | 2009-09-16 | 鸿富锦精密工业（深圳）有限公司 | Automatic control circuit of display power supply |
| CN207396767U (en) * | 2017-09-01 | 2018-05-22 | 珠海市杰理科技股份有限公司 | Infrared tube detection device and system |
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