CN107449471A - 一种基于高掺锗光纤探头的磁场和温度同时测量装置 - Google Patents
一种基于高掺锗光纤探头的磁场和温度同时测量装置 Download PDFInfo
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Abstract
本发明公开了一种基于高掺锗光纤探头的磁场和温度同时测量装置由宽带光源,入射光纤,高掺锗光纤,出射光纤,光纤光谱仪,高掺锗光纤光栅,锥区,磁流体,石英毛细管,UV胶,磁场发生器和温度控制箱组成。创新地将极短长度的高掺锗光纤熔接在单模光纤之间,并在高掺锗光纤上直接刻写光纤光栅,进一步对该结构进行化学腐蚀增敏,利用M‑Z干涉光谱与光纤光栅对磁场和温度不同的响应直接实现了双参数的同时测量。高掺锗光纤刻写光纤光栅不需要载氢和退火,简化了制作工艺,热敏感性也比石英光纤高,这大幅缩减了探头体积。因此,该发明具有体积小巧,灵敏度高,灵活性强和制作便捷的突出优点,是一种较优的分布式磁场测量设计方案。
Description
技术领域
本发明属于光纤磁场传感技术领域,具体涉及一种基于高掺锗光纤探头的磁场和温度同时测量装置。
背景技术
光纤磁场传感技术主要致力于弱磁性目标探测,服务于实际的工程和军事应用。按照感应机理的不同,光纤磁场传感器可分为悬臂梁-光纤光栅结构的磁场传感器,基于磁致伸缩材料的光纤磁场传感器和基于磁流体的光纤磁场传感器等不同类型。
磁流体(Magnetic Fluids)是纳米磁性微粒在表面活性剂包裹下均匀弥散在载液中所形成的一种稳定的胶体溶液。当光入射到在外磁场作用下的磁流体薄膜上,磁流体的光学性质会发生变化,进而引起出射光波传输特性的变化,产生磁场调制的双折射效应、折射率可控性和热透镜效应等。
由于外界磁场可以引发磁流体折射率的变化,同时该变化也受到磁性颗粒、浓度和厚度的影响,因此,适当地选择这些参数,就可以达到满足不同测量条件的高精度、高灵敏的测量结果。目前,基于磁流体折射率可控特性的光学传感原理及应用在国内外都是一个热门的研究课题。
发明内容
针对现有技术的不足,本发明的目的在于提供一种基于高掺锗光纤探头的磁场和温度同时测量装置。创新地将极短长度的高掺锗光纤熔接在单模光纤之间,并在高掺锗光纤上直接刻写光纤光栅,进一步对该结构进行化学腐蚀增敏,利用M-Z干涉光谱与光纤光栅对磁场和温度不同的响应直接实现了双参数的同时测量。该设计结构新颖,探头体积小巧,灵敏度高,是一种较优的实现分布式磁场“点”测量的设计方案。
本发明通过以下技术方案实现:一种基于高掺锗光纤探头的磁场和温度同时测量装置由宽带光源(1),入射光纤(2),高掺锗光纤(3),出射光纤(4),光纤光谱仪(5),高掺锗光纤光栅(6),锥区(7),磁流体(8),石英毛细管(9),UV胶(10),磁场发生器(11)和温度控制箱(12)组成;宽带光源(1)与入射光纤(2)的左端连接;入射光纤(2),高掺锗光纤(3)和出射光纤(4)依次熔接,出射光纤(4)的右端与光纤光谱仪(5)连接;高掺锗光纤(3)经倍频氩离子激光刻写形成高掺锗光纤光栅(6),再经化学腐蚀形成锥区(7),水平置于填充磁流体(8)的石英毛细管(9)的轴心处;石英毛细管(9)的两端用UV胶(10)密封,水平置于磁场发生器(11)的中部和温度控制箱(12)内。
所述的高掺锗光纤(3)的长度为1.5mm~4mm,纤芯直径为3µm,纤芯内GeO2的掺杂浓度为98%,入射光纤(2)和出射光纤(4)的纤芯直径为9µm。
所述的高掺锗光纤光栅(6)的Bragg波长为1548nm~1552nm,透射峰强度为10dB~15dB。
所述的锥区(7)的直径为30µm~60µm。
所述的磁流体(8)的密度为1.8g/cc,饱和磁化强度为220Gauss,纳米磁性颗粒的平均直径为10nm。
本发明的工作原理是:入射光在经过入射光纤(2)和高掺锗光纤(3)的熔接点时,由于纤芯失配改变了光场耦合条件,部分光会被耦合到高掺锗光纤(3)的包层中,激发出在包层中传播的包层模,另一部分光作为纤芯模继续沿纤芯向前传播;在高掺锗光纤(3)和出射光纤(4)的熔接点再次发生模式耦合,部分包层模会被重新耦合到出射光纤(4)的纤芯中,从而与纤芯模形成M-Z干涉。包层模和纤芯模的相位差如下式所示:
(1)
其中,n eff m 为纤芯模和第m阶包层模的有效折射率之差,λ为入射光波长,L为高掺锗光纤(3)的长度。
M-Z干涉光谱的强度可表示为:
(2)
其中,I co 和I cl 分别表示纤芯模和包层模的光强度。
可见,当光纤表面磁流体(8)的折射率跟随外界磁场强度发生变化,进而影响包层模的有效折射率和两个模式之间的相位差,产生了干涉光谱强度和波长的漂移,该信息被光纤光谱仪(12)接收和解调。由于磁流体(8)微量的折射率变化,就能引起较大的相位差改变,因此能够获得较高的灵敏度。
包层的厚度越小磁流体(8)与包层模之间的相互作用就越强烈,因此将高掺锗光纤(3)进行腐蚀获得直径更小的锥区(7),能够提升该结构对磁流体(8)折射率变化的响应,由此实现了光纤磁场传感。
另一方面,高掺锗光纤光栅(6)只能耦合满足的特定波长的光在纤芯内反向传输,在透射光谱中产生一个窄带宽的透射峰。Bragg反射条件如下式所示:
(3)
其中,n eff,core 为纤芯有效折射率,Λ为光栅周期。
高掺锗光纤光栅(6)的反射光不进入包层,因此透射峰对磁流体(8)折射率的变化不敏感。同时,高掺锗光纤(3)的热膨胀系数高于普通石英光纤,当外界温度发生变化时,高掺锗光纤光栅(6)的光栅周期改变进而透射峰发生漂移,通过光纤光谱仪(12)监测透射峰中心波长实现温度测量。
本发明的有益效果是:(1)高掺锗光纤(3)的纤芯掺杂浓度极高,自身光敏性较强,不需要进行载氢和退火操作就可以直接刻写高掺锗光纤光栅(6),简化了制作工艺;(2)高掺锗光纤光栅(6)的长度只有普通标准光纤光栅的四分之一至三分之一,热敏感性也比普通光纤光栅高,仅仅几个毫米的长度就同时制备了光纤M-Z干涉仪和光纤光栅,这大幅缩减了探头体积。因此,本发明具有体积小巧,灵敏度高,灵活性强和制作便捷的突出优点,是一种较优的实现分布式磁场“点”测量的设计方案。
附图说明
图1是一种基于高掺锗光纤探头的磁场和温度同时测量装置的装置结构示意图。
图2是一种基于高掺锗光纤探头的磁场和温度同时测量装置中高掺锗光纤探头的结构示意图。
具体实施方式
下面结合附图与具体实施方式对本发明作进一步详细描述。
参见附图1,一种基于高掺锗光纤探头的磁场和温度同时测量装置由宽带光源(1),入射光纤(2),高掺锗光纤(3),出射光纤(4),光纤光谱仪(5),高掺锗光纤光栅(6),锥区(7),磁流体(8),石英毛细管(9),UV胶(10),磁场发生器(11)和温度控制箱(12)组成;宽带光源(1)与入射光纤(2)的左端连接;入射光纤(2),高掺锗光纤(3)和出射光纤(4)依次熔接,出射光纤(4)的右端与光纤光谱仪(5)连接。
参见附图2,高掺锗光纤(3)经倍频氩离子激光刻写形成高掺锗光纤光栅(6),再经化学腐蚀形成锥区(7),水平置于填充磁流体(8)的石英毛细管(9)的轴心处;石英毛细管(9)的两端用UV胶(10)密封,水平置于磁场发生器(11)的中部和温度控制箱(12)内。
进一步的,高掺锗光纤(3)的长度为1.5mm~4mm,纤芯直径为3µm,纤芯内GeO2的掺杂浓度为98%,入射光纤(2)和出射光纤(4)的纤芯直径为9µm;高掺锗光纤光栅(6)的Bragg波长为1548nm~1552nm,透射峰强度为10dB~15dB;锥区(7)的直径为30µm~60µm;磁流体(8)的密度为1.8g/cc,饱和磁化强度为220Gauss,纳米磁性颗粒的平均直径为10nm。
本发明的工作原理是:入射光在经过入射光纤(2)和高掺锗光纤(3)的熔接点时,激发出在包层中传播的包层模,另一部分光作为纤芯模继续沿纤芯向前传播;在高掺锗光纤(3)和出射光纤(4)的熔接点部分包层模会被重新耦合到出射光纤(4)的纤芯中,从而与纤芯模形成M-Z干涉。当光纤表面磁流体(8)的折射率跟随外界磁场强度发生变化,进而影响包层模的有效折射率和两个模式之间的相位差,产生了干涉光谱强度和波长的漂移,实现了光纤磁场传感。另一方面,高掺锗光纤光栅(6)只能耦合满足Bragg反射条件的特定波长的光在纤芯内反向传播,对磁流体(8)折射率的变化不敏感。当外界温度发生变化时,高掺锗光纤光栅(6)的光栅周期改变,监测透射峰中心波长实现温度测量。
UV胶(10)起到密封作用,热膨胀系数也较小。磁场发生器(11)和温度控制箱(12)分别用于产生恒定的磁场和控制探头部分的温度以便对传感器进行磁场和温度响应的标定。
对光纤进行化学腐蚀的过程是:将两端分别熔接上入射光纤(2)和出射光纤(4),并且刻写高掺锗光纤光栅(6)的高掺锗光纤(3)完全浸入体积浓度40%的HF酸中,静置40分钟,在该浓度下HF酸对光纤包层的腐蚀速度约为2µm/min,同时光纤光谱仪(5)监测透射光谱防止结构损坏。取出光纤后,用大量去离子水清洁光纤表面,在干燥箱中快速干燥,置于显微镜下对锥区(7)的直径进行测定。
Claims (5)
1.一种基于高掺锗光纤探头的磁场和温度同时测量装置,其特征在于:由宽带光源(1),入射光纤(2),高掺锗光纤(3),出射光纤(4),光纤光谱仪(5),高掺锗光纤光栅(6),锥区(7),磁流体(8),石英毛细管(9),UV胶(10),磁场发生器(11)和温度控制箱(12)组成;宽带光源(1)与入射光纤(2)的左端连接;入射光纤(2),高掺锗光纤(3)和出射光纤(4)依次熔接,出射光纤(4)的右端与光纤光谱仪(5)连接;高掺锗光纤(3)经倍频氩离子激光刻写形成高掺锗光纤光栅(6),再经化学腐蚀形成锥区(7),水平置于填充磁流体(8)的石英毛细管(9)的轴心处;石英毛细管(9)的两端用UV胶(10)密封,水平置于磁场发生器(11)的中部和温度控制箱(12)内。
2.根据权利要求1所述的一种基于高掺锗光纤探头的磁场和温度同时测量装置,其特征在于:所述的高掺锗光纤(3)的长度为1.5mm~4mm,纤芯直径为3µm,纤芯内GeO2的掺杂浓度为98%,入射光纤(2)和出射光纤(4)的纤芯直径为9µm。
3.根据权利要求1所述的一种基于高掺锗光纤探头的磁场和温度同时测量装置,其特征在于:所述的高掺锗光纤光栅(6)的Bragg波长为1548nm~1552nm,透射峰强度为10dB~15dB。
4.根据权利要求1所述的一种基于高掺锗光纤探头的磁场和温度同时测量装置,其特征在于:所述的锥区(7)的直径为30µm~60µm。
5.根据权利要求1所述的一种基于高掺锗光纤探头的磁场和温度同时测量装置,其特征在于:所述的磁流体(8)的密度为1.8g/cc,饱和磁化强度为220Gauss,纳米磁性颗粒的平均直径为10nm。
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