CN107437578A - A kind of electrode material of zinc antimonide thermoelectric material and preparation method thereof - Google Patents
A kind of electrode material of zinc antimonide thermoelectric material and preparation method thereof Download PDFInfo
- Publication number
- CN107437578A CN107437578A CN201610372861.1A CN201610372861A CN107437578A CN 107437578 A CN107437578 A CN 107437578A CN 201610372861 A CN201610372861 A CN 201610372861A CN 107437578 A CN107437578 A CN 107437578A
- Authority
- CN
- China
- Prior art keywords
- electrode
- zinc antimonide
- zinc
- antimonide
- electrode material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
- H10N10/851—Thermoelectric active materials comprising inorganic compositions
- H10N10/853—Thermoelectric active materials comprising inorganic compositions comprising arsenic, antimony or bismuth
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/01—Manufacture or treatment
Abstract
The present invention relates to the electrode material of zinc antimonide thermoelectric material and its preparation technology, it is characterised in that described electrode material is metallic cobalt, gold, platinum, palladium or its alloy.Before electrode preparation, zinc antimonide film surface is roughened, promotes Ohmic contact to be formed.After electrode is placed in into zinc antimonide thermoelectric material, it is heat-treated, further reduces contact resistivity.Lower contact resistance prepares extremely important to zinc antimonide microdevice, is one of the key factor for determining microdevice efficiency.
Description
Technical field：
The present invention relates to the component electrode based on thermoelectric material and its preparation technology, be specifically based on zinc antimonide and
Prepared by the electrode for adulterating zinc antimonide thermal electric film device, belong to thermo-electric generation, semiconductor refrigerating and sensor field.
Background technology：
Thermoelectric material (Thermoelectric material) is the material that can directly carry out mutually changing between thermoelectricity
Material.According to statistics, the energy during energy use more than 60% is all distributed in the form of used heat, and thermoelectric material can incite somebody to action
These heat energy wasted are directly translated into electric energy, in automobile engine and tail gas waste heat recovery, factory's Waste Heat Recovery, the sun
Had a wide range of applications in terms of energy thermo-electric generation and space flight and aviation.In addition, thermoelectric material is also based on Peltier effect preparation
Into semiconductor cooler.Different from conventional compression Refrigeration Technique, the size of conductor refrigerator is small, in light weight, and miniature refrigerator is past
Toward can be so small to have only several grams or tens grams, and without noiseless in mechanical driving part, work, can prepare light and handy, portable
Type semiconductor cooler, it is widely used in refrigerated infrared detector, laser, chip cooling etc..
In terms of thermo-electric generation and semiconductor cooler, the component size based on thermoelectric material is mostly in micro-meter scale.
It is different from mm-scale device, the contact resistivity of microscale devices electrode be determine device conversion efficiency of thermoelectric it is crucial because
One of element.Zd/Zm=L/ (L+2 ρ σ), Z in formuladIt is the thermoelectric figure of merit (weigh device conversion efficiency of thermoelectric) of device, ZmIt is material
Thermoelectric figure of merit, L are thermoelectricity arm lengths, and ρ is the contact resistivity between device electrode and thermoelectric material.Calculated according to formula,
When thermoelectricity arm lengths are 100 μm, if Electrodes rate is from 10-5Ωcm2Drop to 10-7Ωcm2, device is relative to material
Conversion efficiency (Zd/Zm) can be from 0.33 increase by twice to 0.98.
Zinc antimonide is middle warm area thermoelectric material, has high Seebeck coefficient, low thermal conductivity and excellent electrical conductivity, in temperature
Difference generates electricity and semiconductor refrigerating aspect has great potential.Patent 200410024777.8 have studied metal molybdenum and antimony cobalt material
Electrode contacts situation.However, all also studied at present without zinc antimonide electrode ohmic contact both at home and abroad.
The content of the invention：
Present invention is primarily intended to find suitable electrode material for zinc antimonide thermoelectric material, and develop with low contact
The technology for preparing electrode of resistivity.The present invention selects metallic cobalt etc. by theoretical prediction and experiment for zinc antimonide thermoelectric material brush
Suitable electrode material.In electrode production process, plasma bombardment zinc antimonide material surface can be by impurity such as oxide on surface
Remove, reduce surface contact resistivity；Surface roughening treatment can strengthen electrode and zinc antimonide material interface contact performance, enter
One step reduces surface contact resistivity；The annealing process that the present invention optimizes can also further reduce electrode and zinc antimonide material table
Face contact resistivity.Developed by selecting suitable metal material and technology for preparing electrode, the present invention is real on zinc antimonide material
Show low contact rate electrode to prepare.
Embodiment：
Embodiment 1：
Experiment uses magnetron sputtering method, using metallic cobalt as target, the deposited metal cobalt electrode on p-type zinc antimonide film.Tool
Preparation process is as follows：
Step 1, zinc antimonide import growth room by acetone, alcohol, deionized water cleaning after drying；
Step 2, using metallic cobalt as target, to have 100 μ m-thick stainless steel plates of electrode pattern as mask plate, using magnetic control
Sputtering method deposited metal cobalt electrode on the cleaned zinc antimonide film of step 1, working gas is argon gas, and operating air pressure is
0.4Pa, radio-frequency power 50W, 10min are deposited after pre-sputtering time 3min, prepared metallic cobalt thickness of electrode is after testing
100nm；
Step 3, sample is made annealing treatment under argon gas protection, air pressure 420Pa, annealing temperature is 200 DEG C, is moved back
The fiery time is 1h, is handled by the annealing process, and surface contact resistivity is from 1.4 × 10-3Ωcm2An order of magnitude is have dropped to arrive
1.3×10-4Ωcm2。
Embodiment 2：
Experiment uses magnetron sputtering method, using metallic cobalt as target, the deposited metal cobalt electrode on p-type zinc antimonide film,
Increase surface roughening treatment process before prepared by electrode.Specific preparation technology is as follows：
Step 1, zinc antimonide is by acetone, alcohol, deionized water cleaning；
Step 2, the zinc antimonide sample that step 1 was cleaned is put into 0.1% dilute hydrochloric acid solution and soaks 5s, through the past from
Sub- water cleaning, import growth room after drying；
Step 3, using metallic cobalt as target, to have 100 μ m-thick stainless steel plates of electrode pattern as mask plate, using magnetic control
Sputtering method deposited metal cobalt electrode on the cleaned zinc antimonide film of step 2, working gas is argon gas, and operating air pressure is
0.4Pa, radio-frequency power 50W, 10min are deposited after pre-sputtering time 3min, prepared metallic cobalt thickness of electrode is after testing
100nm；
Step 4, sample is made annealing treatment under argon gas protection, air pressure 420Pa, annealing temperature is 200 DEG C, is moved back
The fiery time is 1h, is handled by the annealing process, surface contact resistivity 10-7Ωcm2。
Claims (7)
1. the electrode material and its preparation technology of a kind of zinc antimonide and doping zinc antimonide thermoelectric material, it is characterised in that the electrode
Material include metallic cobalt, gold, platinum, palladium, either for these four metals alloy material or be superimposed on these four metal levels
Other metal levels form electrode.
2. the electrode material of the zinc antimonide material as described in claim 1, it is characterised in that the thickness of the electrode material is 20nm
~3mm.
3. the electrode material preparation technology of the zinc antimonide material as described in claim 1 cleans including zinc antimonide surface plasma,
Prepared by surface roughening treatment, electrode, and electrode heat treatment, and wherein surface plasma cleaning and roughening processing procedure can be all
Selection, can also only select one of process, or both not select.
4. the zinc antimonide material surface plasma cleaning as described in claim 3, including argon ion and Nitrogen ion surface bombardment it is clear
Wash.
5. the zinc antimonide material roughening processing as described in claim 3, referring to perform etching zinc antimonide surface with solution makes it
Surface roughness becomes big, and the solution is acid solution or aqueous slkali.
6. prepared by the electrode of the zinc antimonide material as described in claim 3, preparation method include electron beam steam method, thermal evaporation and
Magnetron sputtering method.
7. the electrode heat treatment of the zinc antimonide material as described in claim 3, preferentially heat treatment temperature is 100~400 DEG C.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610372861.1A CN107437578A (en) | 2016-05-27 | 2016-05-27 | A kind of electrode material of zinc antimonide thermoelectric material and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610372861.1A CN107437578A (en) | 2016-05-27 | 2016-05-27 | A kind of electrode material of zinc antimonide thermoelectric material and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107437578A true CN107437578A (en) | 2017-12-05 |
Family
ID=60458164
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610372861.1A Pending CN107437578A (en) | 2016-05-27 | 2016-05-27 | A kind of electrode material of zinc antimonide thermoelectric material and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107437578A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120180842A1 (en) * | 2009-03-26 | 2012-07-19 | Lidong Chen | Thermoelectric device, electrode materials and method for fabricating thereof |
| CN103746070A (en) * | 2014-01-27 | 2014-04-23 | 中国科学院上海硅酸盐研究所 | Preparation method of annular-structure thermo-electric device |
| JP2015222757A (en) * | 2014-05-22 | 2015-12-10 | パナソニックＩｐマネジメント株式会社 | Thermoelectric conversion module |
-
2016
- 2016-05-27 CN CN201610372861.1A patent/CN107437578A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120180842A1 (en) * | 2009-03-26 | 2012-07-19 | Lidong Chen | Thermoelectric device, electrode materials and method for fabricating thereof |
| CN103746070A (en) * | 2014-01-27 | 2014-04-23 | 中国科学院上海硅酸盐研究所 | Preparation method of annular-structure thermo-electric device |
| JP2015222757A (en) * | 2014-05-22 | 2015-12-10 | パナソニックＩｐマネジメント株式会社 | Thermoelectric conversion module |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN100524867C (en) | Method for manufacturing cobalt stibium antimonide based thermoelectric device | |
| KR102067647B1 (en) | Manufacturing method of thermoelectric device and cooling thermoelectric moudule using the same | |
| CN103060750B (en) | Method for preparing bismuth, antimony and telluride base thermoelectric film | |
| JP2014509074A (en) | Thermoelectric element using nanostructured bulk material and thermoelectric module including the same | |
| CN102887488B (en) | Cu-Ga-Sb-Te quaternary thermoelectric semiconductor with chalcopyrite structure, and preparation process for Cu-Ga-Sb-Te quaternary thermoelectric semiconductor | |
| CN101969094A (en) | Coating for thermoelectric material and device with same | |
| CN103681885A (en) | Schottky diode chip, Schottky diode device and manufacturing method for Schottky diode chip-composite barrier | |
| JP5780254B2 (en) | Thermoelectric conversion element | |
| CN103864026B (en) | Cu-In-Zn-Te quaternary p-type thermoelectric semiconductor and preparation technology thereof | |
| KR102022429B1 (en) | Cooling thermoelectric moudule and method of manufacturing method of the same | |
| Chen et al. | An investigation on the coupled thermal–mechanical–electrical response of automobile thermoelectric materials and devices | |
| CN102002673A (en) | Preparation method of nanocrystalline silicon-aluminum oxide/silicon oxide thermoelectric film material | |
| CN103247752B (en) | Ge-Pb-Te-Se composite thermoelectric material and preparation method thereof | |
| CN104627968B (en) | The preparation technology of high temperature thermoelectric compound in a kind of p-type Mn-Zn-Te | |
| CN107437578A (en) | A kind of electrode material of zinc antimonide thermoelectric material and preparation method thereof | |
| CN104843654A (en) | P-type Ga-Cd-S-Te quaternary compound medium-temperature thermoelectric alloy and preparation process thereof | |
| CN103320666B (en) | Ag-In-Zn-Se quaternary thermoelectric semiconductor and preparation technology thereof | |
| CN203288656U (en) | A micro thermoelectric device | |
| CN104388901B (en) | Cobalt-antimonide-base thermoelectric film and preparation method thereof | |
| CN102514282B (en) | Protective coating suitable for CoSb3 base thermoelectric material and preparation method thereof | |
| US9761779B2 (en) | Thermoelectric conversion material | |
| CN104157780A (en) | Method for improving heat stability in Mg-Si-Sn-based thermoelectric material service process | |
| CN105002384A (en) | High-temperature thermal-electric material in n-type In-Sn-Li-Se based semi-conductor and preparation technology thereof | |
| JP4937069B2 (en) | Thermoelectric conversion material and thermoelectric conversion element using the same | |
| KR101402229B1 (en) | A Manufacturing Method of Thermolectric Semiconductor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20171205 |