CN103247752B - Ge-Pb-Te-Se composite thermoelectric material and preparation method thereof - Google Patents
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- 239000000463 material Substances 0.000 title claims abstract description 75
- 239000002131 composite material Substances 0.000 title claims abstract description 54
- 238000002360 preparation method Methods 0.000 title claims abstract description 14
- 239000000126 substance Substances 0.000 claims abstract description 8
- 229910005900 GeTe Inorganic materials 0.000 claims description 32
- 229910002665 PbTe Inorganic materials 0.000 claims description 15
- OCGWQDWYSQAFTO-UHFFFAOYSA-N tellanylidenelead Chemical compound [Pb]=[Te] OCGWQDWYSQAFTO-UHFFFAOYSA-N 0.000 claims description 13
- 239000011159 matrix material Substances 0.000 claims description 10
- 239000002994 raw material Substances 0.000 claims description 10
- 239000000956 alloy Substances 0.000 claims description 9
- 229910045601 alloy Inorganic materials 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 7
- 238000005245 sintering Methods 0.000 claims description 7
- 238000006243 chemical reaction Methods 0.000 claims description 6
- 239000000843 powder Substances 0.000 claims description 6
- 239000010453 quartz Substances 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
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- 239000002184 metal Substances 0.000 claims description 5
- 239000006104 solid solution Substances 0.000 claims description 5
- 238000003723 Smelting Methods 0.000 claims description 4
- 238000005303 weighing Methods 0.000 claims 3
- 239000003708 ampul Substances 0.000 claims 2
- 239000013078 crystal Substances 0.000 claims 2
- 238000009413 insulation Methods 0.000 claims 1
- 230000014759 maintenance of location Effects 0.000 claims 1
- 238000007789 sealing Methods 0.000 claims 1
- 238000010583 slow cooling Methods 0.000 claims 1
- 238000005476 soldering Methods 0.000 claims 1
- 238000001330 spinodal decomposition reaction Methods 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 description 6
- 238000002490 spark plasma sintering Methods 0.000 description 5
- 239000012856 weighed raw material Substances 0.000 description 4
- 238000002441 X-ray diffraction Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000010248 power generation Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000005057 refrigeration Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 229910052745 lead Inorganic materials 0.000 description 2
- 238000010791 quenching Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- YBNMDCCMCLUHBL-UHFFFAOYSA-N (2,5-dioxopyrrolidin-1-yl) 4-pyren-1-ylbutanoate Chemical compound C=1C=C(C2=C34)C=CC3=CC=CC4=CC=C2C=1CCCC(=O)ON1C(=O)CCC1=O YBNMDCCMCLUHBL-UHFFFAOYSA-N 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000001889 high-resolution electron micrograph Methods 0.000 description 1
- 239000002440 industrial waste Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000010587 phase diagram Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 230000005676 thermoelectric effect Effects 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
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Abstract
Description
技术领域technical field
本发明涉及新型能源材料技术领域,尤其是涉及一种中温复合热电材料及其制备方法。The invention relates to the technical field of new energy materials, in particular to a medium-temperature composite thermoelectric material and a preparation method thereof.
背景技术Background technique
热电材料是一种特殊功能材料,利用其具有电流通过时产生温度梯度、而两端存在温差时产生电动势或电流的热电效应可实现温控、温差发电和通电制冷。这些制冷和发电系统具有体积小、重量轻,无任何机械转动部分,工作中无噪音,不造成环境污染,使用寿命长,易于控制等优点,被认为是将来非常有竞争力的能源替代材料,在未来绿色环保能源工程和制冷工程方面有广阔的应用前景。Thermoelectric material is a special functional material, which can realize temperature control, temperature difference power generation and energized refrigeration by using the thermoelectric effect that produces a temperature gradient when a current passes through it, and generates an electromotive force or current when there is a temperature difference between the two ends. These refrigeration and power generation systems have the advantages of small size, light weight, no mechanical rotating parts, no noise during operation, no environmental pollution, long service life, and easy control. They are considered to be very competitive energy alternative materials in the future. It has broad application prospects in future green environmental protection energy engineering and refrigeration engineering.
热电装置的转换效率是由热电材料的性能决定的,而热电材料的性能则是由无量纲优值系数ZT=S2σT/k来衡量,其中S为塞贝克(Seebeck)系数,σ和k分别是材料的电导率和热导率,T为绝对温度。一种性能优异的热电材料必须具有高Seebeck系数、高电导率和低热导率。The conversion efficiency of thermoelectric devices is determined by the performance of thermoelectric materials, and the performance of thermoelectric materials is measured by the dimensionless figure of merit ZT=S 2 σT/k, where S is the Seebeck coefficient, σ and k are the electrical and thermal conductivity of the material, respectively, and T is the absolute temperature. A thermoelectric material with excellent performance must have high Seebeck coefficient, high electrical conductivity and low thermal conductivity.
IV-VI族半导体热电材料,包括PbTe、GeTe和PbSe为中温半导体热电材料,可用于温区(400-800K)工作的温差发电装置,尤其应用在工业废热的回收及汽车发动机余热利用等领域。与PbTe基热电材料相比,虽然GeTe的电导率较高,但其热导率也较高,导致其热电优值ZT较小。IV-VI semiconductor thermoelectric materials, including PbTe, GeTe and PbSe are medium-temperature semiconductor thermoelectric materials, which can be used in thermoelectric power generation devices working in temperature range (400-800K), especially in the recovery of industrial waste heat and the utilization of waste heat from automobile engines. Compared with PbTe-based thermoelectric materials, although GeTe has higher electrical conductivity, its thermal conductivity is also higher, resulting in a smaller thermoelectric figure of merit ZT.
降低GeTe基复合热电材料热导率的有效途径是引入纳米第二相,增加对声子的散射,而对电导率影响不大,从而能够具有高的无量纲优值系数。An effective way to reduce the thermal conductivity of GeTe-based composite thermoelectric materials is to introduce a nano-second phase to increase the scattering of phonons, but has little effect on the electrical conductivity, so that it can have a high dimensionless figure of merit.
发明内容Contents of the invention
本发明所要解决的技术问题在于提供一种复合热电材料及其制备方法,旨在提供一种包含少量PbTe立方结构的纳米相和GeTe三方结构基体相的复合热电材料,具有很低热导率和良好的热电性能。The technical problem to be solved by the present invention is to provide a composite thermoelectric material and its preparation method, aiming to provide a composite thermoelectric material containing a small amount of PbTe cubic structure nanophase and GeTe trigonal structure matrix phase, which has very low thermal conductivity and good thermoelectric performance.
本发明是这样实现的,根据GeTe-PbTe赝二元相图具有调幅分解转变的相形成规律设计合金的成分和热处理工艺,制备了一种GeTe基复合热电材料,所述热电材料的化学式为Ge1-xPbxTe1-ySey,其中x为Pb取代Ge的量,x取值范围为0.10≦x≦0.90,y为Se取代Te的量,y取值范围为0.10≦y≦0.70。The present invention is achieved in this way. According to the GeTe-PbTe pseudo-binary phase diagram with the phase formation rule of amplitude modulation decomposition transformation, the composition and heat treatment process of the alloy are designed, and a GeTe-based composite thermoelectric material is prepared. The chemical formula of the thermoelectric material is Ge 1-x Pb x Te 1-y Se y , where x is the amount of Ge replaced by Pb, the range of x is 0.10≦x≦0.90, y is the amount of Te replaced by Se, and the range of y is 0.10≦y≦0.70 .
一种所述GeTe基复合热电材料的制备方法,包括步骤:根据Ge1-xPbxTe1-ySey中x和y的数值,以金属Ge、Pb、Te及Se单质为原料,按照配比称取原料;将称取的原料制作得到Ge1- xPbxTe1-ySey单相合金;将Ge1-xPbxTe1-ySey合金研磨成粉末后进行放电等离子烧结,得到包含PbTe立方结构的纳米相和GeTe三方结构基体相的复合热电材料。A preparation method of the GeTe-based composite thermoelectric material, comprising the steps of: according to the values of x and y in Ge 1-x Pb x Te 1-y Se y , using metal Ge, Pb, Te and Se simple substances as raw materials, according to Proportionally weigh the raw materials; make the Ge 1- x Pb x Te 1-y Se y single-phase alloy from the weighed raw materials; grind the Ge 1-x Pb x Te 1-y Se y alloy into powder and perform discharge plasma After sintering, a composite thermoelectric material comprising a nanophase of a PbTe cubic structure and a matrix phase of a GeTe cubic structure is obtained.
本发明提供的复合热电材料,通过相关体系的成相规律进行合金成分及工艺设计,采用熔炼、热处理获得单一固溶体、通过放电等离子烧结制备工艺获得了包含少量PbTe立方结构的纳米相和GeTe三方结构基体相的复合材料Ge1-xPbxTe1-ySey,所述热电材料具有很低的热导率并具有较高的热电性能,无量纲优值系数ZT在400°C时达到1.58。The composite thermoelectric material provided by the present invention, the alloy composition and process design are carried out through the phase formation rules of related systems, a single solid solution is obtained by smelting and heat treatment, and a nanophase containing a small amount of PbTe cubic structure and a GeTe trigonal structure are obtained by a spark plasma sintering preparation process The composite material Ge 1-x Pb x Te 1-y Se y of the matrix phase, the thermoelectric material has very low thermal conductivity and high thermoelectric performance, and the dimensionless figure of merit ZT reaches 1.58 at 400°C .
附图说明Description of drawings
图1为Ge1-xPbxTe0.5Se0.5(x=0,0.1,0.2,0.25,0.3,0.4和0.5)复合热电材料的X射线衍射图。Figure 1 is the X-ray diffraction pattern of Ge 1-x Pb x Te 0.5 Se 0.5 (x=0, 0.1, 0.2, 0.25, 0.3, 0.4 and 0.5) composite thermoelectric material.
图2为Ge0.75Pb0.25Te0.5Se0.5复合热电材料的高分辨电镜照片。Fig. 2 is a high-resolution electron micrograph of Ge 0.75 Pb 0.25 Te 0.5 Se 0.5 composite thermoelectric material.
图3为Ge1-xPbxTe0.5Se0.5(x=0,0.1,0.2,0.25,0.3,0.4和0.5)复合热电材料及GeTe化合物的电阻率与温度的变化关系图。Figure 3 is a graph showing the relationship between the resistivity and temperature of Ge 1-x Pb x Te 0.5 Se 0.5 (x=0, 0.1, 0.2, 0.25, 0.3, 0.4 and 0.5) composite thermoelectric materials and GeTe compounds.
图4为Ge1-xPbxTe0.5Se0.5(x=0,0.1,0.2,0.25,0.3,0.4和0.5)复合热电材料及GeTe化合物的塞贝克系数与温度的变化关系图。Figure 4 is a graph showing the relationship between Seebeck coefficient and temperature of Ge 1-x Pb x Te 0.5 Se 0.5 (x=0, 0.1, 0.2, 0.25, 0.3, 0.4 and 0.5) composite thermoelectric materials and GeTe compounds.
图5为Ge1-xPbxTe0.5Se0.5(x=0,0.1,0.2,0.25,0.3,0.4和0.5)复合热电材料及GeTe化合物的热导率与温度的变化关系图。Figure 5 is a diagram showing the relationship between thermal conductivity and temperature of Ge 1-x Pb x Te 0.5 Se 0.5 (x=0, 0.1, 0.2, 0.25, 0.3, 0.4 and 0.5) composite thermoelectric materials and GeTe compounds.
图6为Ge1-xPbxTe0.5Se0.5(x=0,0.1,0.2,0.25,0.3,0.4和0.5)复合热电材料及GeTe化合物的无量纲优值系数(ZT)与温度的变化关系图。Figure 6 shows the relationship between the dimensionless figure of merit (ZT) and temperature of Ge 1-x Pb x Te 0.5 Se 0.5 (x=0, 0.1, 0.2, 0.25, 0.3, 0.4 and 0.5) composite thermoelectric materials and GeTe compounds picture.
具体实施方式detailed description
为了使本发明的目的、技术方案及优点更加清楚明白,以下结合附图及实施例,对本发明进行进一步详细说明。应当理解,此处所描述的具体实施例仅仅用以解释本发明,并不用于限定本发明。In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.
一种GeTe基复合热电材料,所述热电材料的化学式为Ge1-xPbxTe1-ySey,其中x为Pb取代Ge的量,取值范围为0.10≦x≦0.90,y为Se取代Te的量,取值范围为0.10≦y≦0.70。A GeTe-based composite thermoelectric material, the chemical formula of the thermoelectric material is Ge 1-x Pb x Te 1-y Se y , wherein x is the amount of Ge replaced by Pb, and the value range is 0.10≦x≦0.90, and y is Se The amount of replacing Te has a value range of 0.10≦y≦0.70.
其中,少量PbTe立方结构分散于纳米相GeTe三方结构基体相中,x决定着分布于GeTe中的PbTe相含量及材料的热电性能。Among them, a small amount of PbTe cubic structure is dispersed in the nanophase GeTe trigonal structure matrix phase, and x determines the content of PbTe phase distributed in GeTe and the thermoelectric properties of the material.
优选地,y的取值为0.5,x的取值范围为0.10≦x≦0.50。Preferably, the value of y is 0.5, and the range of x is 0.10≦x≦0.50.
一种所述GeTe基复合热电材料的制备方法,包括步骤:A preparation method of the GeTe-based composite thermoelectric material, comprising the steps of:
第一步,根据所述Ge1-xPbxTe1-ySey中x和y的数值,以金属Ge、Pb、Te及Se单质为原料,按照配比称取原料;;In the first step, according to the values of x and y in the Ge 1-x Pb x Te 1-y Se y , the metal Ge, Pb, Te and Se simple substances are used as raw materials, and the raw materials are weighed according to the proportion;
第二步,将称取的原料制作得到Ge1-xPbxTe1-ySey单相合金;In the second step, the weighed raw materials are prepared to obtain Ge 1-x Pb x Te 1-y Se y single-phase alloy;
第三步,将Ge1-xPbxTe1-ySey合金研磨成粉末后进行放电等离子烧结,得到包含PbTe立方结构的纳米相和GeTe三方结构基体相的复合热电材料。In the third step, the Ge 1-x Pb x Te 1-y Se y alloy is ground into powder and then subjected to spark plasma sintering to obtain a composite thermoelectric material comprising a nanophase of PbTe cubic structure and a matrix phase of GeTe cubic structure.
其中,第一步中,可以根据x及y数值的不同得到不同金属Ge、Pb、Te及Se的配比。x取值范围为0.10≦x≦0.90,y取值范围为0.10≦y≦0.70。Wherein, in the first step, the proportions of different metals Ge, Pb, Te and Se can be obtained according to the values of x and y. The value range of x is 0.10≦x≦0.90, and the value range of y is 0.10≦y≦0.70.
在第二步中,将称取的原料装入石英管中,抽到6×10-3Pa真空后封焊好石英管并置于马弗炉中进行反应熔炼,反应温度为1000℃,反应时间为20小时,然后,缓慢降温至600℃,在600℃保温4小时进行固溶体处理后淬火,得到Ge1-xPbxTe1-ySey单相合金In the second step, put the weighed raw materials into a quartz tube, pump the vacuum to 6×10 -3 Pa, seal and weld the quartz tube and place it in a muffle furnace for reaction melting. The reaction temperature is 1000°C. The time is 20 hours, then slowly lower the temperature to 600°C, and keep at 600°C for 4 hours for solid solution treatment and then quenching to obtain Ge 1-x Pb x Te 1-y Se y single-phase alloy
在第三步中,将Ge1-xPbxTe1-ySey合金研磨成粉末后进行放电等离子烧结,真空度为1×10-2Pa,压力30~50MPa,烧结温度450~500℃,保温时间5~10分钟,可以得到所述复合热电材料。In the third step, the Ge 1-x Pb x Te 1-y Se y alloy is ground into powder and then subjected to spark plasma sintering, the vacuum degree is 1×10 -2 Pa, the pressure is 30-50 MPa, and the sintering temperature is 450-500°C , the holding time is 5-10 minutes, and the composite thermoelectric material can be obtained.
制得的复合热电材料Ge1-xPbxTe1-ySey采用如图1所示的X射线衍射图进行表征。图1展示了x为0,0.1,0.2,0.25,0.3,0.4和0.5,y为0.5时复合热电材料的X射线衍射图,图2为所述复合热电材料Ge0.75Pb0.25Te0.5Se0.5(x为0.25,y为0.5)的高分辨电镜照片,图1和图2表明本发明制得的所述复合热电材料包含少量PbTe立方结构的纳米相和GeTe三方结构基体相。The obtained composite thermoelectric material Ge 1-x Pb x Te 1-y Se y is characterized by the X-ray diffraction pattern shown in FIG. 1 . Figure 1 shows the X-ray diffraction pattern of the composite thermoelectric material when x is 0, 0.1, 0.2, 0.25, 0.3, 0.4 and 0.5, and y is 0.5, and Figure 2 shows the composite thermoelectric material Ge 0.75 Pb 0.25 Te 0.5 Se 0.5 ( x is 0.25, y is 0.5), and Fig. 1 and Fig. 2 show that the composite thermoelectric material prepared by the present invention contains a small amount of PbTe cubic structure nanophase and GeTe trigonal structure matrix phase.
请参阅图3,复合热电材料Ge1-xPbxTe0.5Se0.5的电阻率随着温度的升高而发生变化。在相同温度下,复合热电材料Ge1-xPbxTe0.5Se0.5的电阻率大于GeTe的导电率,并且,复合热电材料Ge1-xPbxTe0.5Se0.5的电阻率随着x值增加而增大。Please refer to Figure 3, the resistivity of the composite thermoelectric material Ge 1-x Pb x Te 0.5 Se 0.5 changes with the increase of temperature. At the same temperature, the resistivity of the composite thermoelectric material Ge 1-x Pb x Te 0.5 Se 0.5 is greater than the conductivity of GeTe, and the resistivity of the composite thermoelectric material Ge 1-x Pb x Te 0.5 Se 0.5 increases with the value of x And increase.
请参阅图4,复合热电材料Ge1-xPbxTe0.5Se0.5的塞贝克系数随着温度的升高而变化。在相同温度下,复合热电材料Ge1-xPbxTe0.5Se0.5的塞贝克系数大于GeTe的塞贝克系数,并且,复合热电材料Ge1-xPbxTe0.5Se0.5的塞贝克系数随着x值增加而增大。Please refer to Figure 4, the Seebeck coefficient of the composite thermoelectric material Ge 1-x Pb x Te 0.5 Se 0.5 changes with increasing temperature. At the same temperature, the Seebeck coefficient of the composite thermoelectric material Ge 1-x Pb x Te 0.5 Se 0.5 is greater than that of GeTe, and the Seebeck coefficient of the composite thermoelectric material Ge 1-x Pb x Te 0.5 Se 0.5 increases with increases with increasing x values.
请参阅图5,复合热电材料Ge1-xPbxTe0.5Se0.5的热导率随着温度的升高而降低。并且,在相同温度下,复合热电材料Ge1-xPbxTe0.5Se0.5的热导率均大幅度低于GeTe的热导率。并且,相同温度下,随着x数值的增大,复合热电材料Ge1-xPbxTe0.5Se0.5的热导率数值减小。由图5可以得出,复合热电材料Ge1-xPbxTe0.5Se0.5相比于GeTe,可以降低热电材料的热导率。Please refer to Figure 5, the thermal conductivity of the composite thermoelectric material Ge 1-x Pb x Te 0.5 Se 0.5 decreases with increasing temperature. Moreover, at the same temperature, the thermal conductivity of the composite thermoelectric material Ge 1-x Pb x Te 0.5 Se 0.5 is significantly lower than that of GeTe. Moreover, at the same temperature, as the value of x increases, the thermal conductivity value of the composite thermoelectric material Ge 1-x Pb x Te 0.5 Se 0.5 decreases. It can be concluded from Fig. 5 that the composite thermoelectric material Ge 1-x Pb x Te 0.5 Se 0.5 can reduce the thermal conductivity of the thermoelectric material compared with GeTe.
请参阅图6,复合热电材料Ge1-xPbxTe0.5Se0.5的无量纲优值系数随着温度的升高而增大。并且,在相同温度下,复合热电材料Ge1-xPbxTe0.5Se0.5的无量纲优值系数均大于GeTe的热导率。并且,相同温度下,随着x数值的增大,复合热电材料Ge1-xPbxTe0.5Se0.5的无量纲优值系数数值大致增加。由图6可以得出,复合热电材料Ge1-xPbxTe0.5Se0.5相比于GeTe,可以增加热电材料的无量纲优值系数,增加材料的热电性能。Please refer to Figure 6, the dimensionless figure of merit of the composite thermoelectric material Ge 1-x Pb x Te 0.5 Se 0.5 increases with increasing temperature. Moreover, at the same temperature, the dimensionless figure of merit of the composite thermoelectric material Ge 1-x Pb x Te 0.5 Se 0.5 is greater than the thermal conductivity of GeTe. Moreover, at the same temperature, as the value of x increases, the dimensionless figure of merit value of the composite thermoelectric material Ge 1-x Pb x Te 0.5 Se 0.5 roughly increases. It can be concluded from Figure 6 that the composite thermoelectric material Ge 1-x Pb x Te 0.5 Se 0.5 can increase the dimensionless figure of merit of the thermoelectric material and increase the thermoelectric performance of the material compared with GeTe.
本技术方案中,图3至图6中关于纯GeTe化合物的优值系数,根据Gelbstein等人报道的纯GeTe化合物的优值系数,具体请参见Y.Gelbstein,B.Dado,O.B.Yehuda,Y.Sadia,Z.Dashevsky and M.P.Dariel,Chem.Mater.,2010,22,1054–1058。In this technical solution, the figure of merit of the pure GeTe compound in Fig. 3 to Fig. 6 is based on the figure of merit of the pure GeTe compound reported by Gelbstein et al. For details, please refer to Y.Gelbstein, B.Dado, O.B.Yehuda, Y. Sadia, Z. Dashevsky and M.P. Dariel, Chem. Mater., 2010, 22, 1054–1058.
下面,具体用实施例说明本技术放案提供的复合热电材料及其制备方法。In the following, the composite thermoelectric material provided by the present technology and its preparation method will be described in detail with examples.
以金属Ge、Pb、Te及Se单质为原料,根据Ge0.75Pb0.25Te0.5Se0.5的数值,按照配比称取原料;将称取的原料装入石英管中,抽到6×10-3Pa真空后封焊好石英管并置于马弗炉中进行反应熔炼,反应温度为1000℃,反应时间为20小时,然后缓慢降温至600℃,在600℃保温4小时进行固溶体处理后淬火,得到Ge0.75Pb0.25Te0.5Se0.5单相合金。将Ge0.75Pb0.25Te0.5Se0.5合金研磨成粉末后进行放电等离子烧结,真空度为1×10-2Pa,压力30~50MPa,烧结温度450~500℃,保温时间5~10分钟,即得到包含少量PbTe立方结构的纳米相和GeTe三方结构基体相的复合热电材料Ge0.75Pb0.25Te0.5Se0.5。Use metal Ge, Pb, Te and Se simple substances as raw materials, and weigh the raw materials according to the ratio according to the value of Ge 0.75 Pb 0.25 Te 0.5 Se 0.5 ; put the weighed raw materials into a quartz tube, pump to 6×10 -3 After Pa vacuum, the quartz tube is sealed and welded and placed in a muffle furnace for reaction smelting. The reaction temperature is 1000°C, the reaction time is 20 hours, then slowly lower the temperature to 600°C, keep at 600°C for 4 hours for solid solution treatment, and then quench. A Ge 0.75 Pb 0.25 Te 0.5 Se 0.5 single-phase alloy was obtained. Grinding the Ge 0.75 Pb 0.25 Te 0.5 Se 0.5 alloy into powder and then carrying out spark plasma sintering, the vacuum degree is 1×10 -2 Pa, the pressure is 30-50 MPa, the sintering temperature is 450-500°C, and the holding time is 5-10 minutes. Composite thermoelectric material Ge 0.75 Pb 0.25 Te 0.5 Se 0.5 containing a small amount of PbTe cubic nanophase and GeTe trigonal matrix phase.
本实施例制得的复合热电材料Ge0.75Pb0.25Te0.5Se0.5的物相、微观组织及热电性能如图1-6所示,其热导率在673K为0.66W/m.K,是纯GeTe同温度下3.23W/m.K的20%;而其最大优值系数(ZT)为1.58,比纯GeTe的0.51高出209%。The phase, microstructure and thermoelectric properties of the composite thermoelectric material Ge 0.75 Pb 0.25 Te 0.5 Se 0.5 prepared in this example are shown in Figure 1-6, and its thermal conductivity is 0.66W/mK at 673K, which is the same as pure GeTe 20% of 3.23W/mK at temperature; and its maximum figure of merit (ZT) is 1.58, 209% higher than pure GeTe's 0.51.
可以理解的是,可以采用上述相同或者相近的方法,制得不同x及y取值的复合热电材料Ge1-xPbxTe1-ySey.。其中,x为0,0.1,0.2,0.25,0.3,0.4和0.5,y为0.5时,制得的复合热电材料Ge1-xPbxTe1-ySey的性能可参见图3-6。It can be understood that composite thermoelectric materials Ge 1-x Pb x Te 1-y Se y . with different values of x and y can be prepared by using the same or similar method as above. Wherein, when x is 0, 0.1, 0.2, 0.25, 0.3, 0.4 and 0.5, and y is 0.5, the properties of the prepared composite thermoelectric material Ge 1-x Pb x Te 1-y Se y can be seen in Fig. 3-6.
本发明提供的复合热电材料,通过相关体系的成相规律进行合金成分及工艺设计,采用熔炼、热处理获得单一固溶体、通过放电等离子烧结制备工艺获得了包含少量PbTe立方结构的纳米相和GeTe三方结构基体相的复合材料Ge1-xPbxTe1-ySey,所述热电材料具有很低的热导率并具有较高的热电性能,无量纲优值系数ZT在400℃时达到1.58。The composite thermoelectric material provided by the present invention, the alloy composition and process design are carried out through the phase formation rules of related systems, a single solid solution is obtained by smelting and heat treatment, and a nanophase containing a small amount of PbTe cubic structure and a GeTe trigonal structure are obtained by a spark plasma sintering preparation process The matrix phase composite material Ge 1-x Pb x Te 1-y Se y , the thermoelectric material has very low thermal conductivity and high thermoelectric performance, and the dimensionless figure of merit ZT reaches 1.58 at 400°C.
以上所述仅为本发明的较佳实施例而已,并不用以限制本发明,凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等,均应包含在本发明的保护范围之内。The above descriptions are only preferred embodiments of the present invention, and are not intended to limit the present invention. Any modifications, equivalent replacements and improvements made within the spirit and principles of the present invention should be included in the protection of the present invention. within range.
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