CN107437503A - Substrate processing method using same - Google Patents

Substrate processing method using same Download PDF

Info

Publication number
CN107437503A
CN107437503A CN201610467283.XA CN201610467283A CN107437503A CN 107437503 A CN107437503 A CN 107437503A CN 201610467283 A CN201610467283 A CN 201610467283A CN 107437503 A CN107437503 A CN 107437503A
Authority
CN
China
Prior art keywords
film
substrate
hole
spray
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201610467283.XA
Other languages
Chinese (zh)
Inventor
徐映水
闵昔基
李埈爀
韩泳琪
卞亨锡
李奎尚
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Charm Engineering Co Ltd
Original Assignee
Charm Engineering Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020160064730A external-priority patent/KR101878665B1/en
Priority claimed from KR1020160064732A external-priority patent/KR20170133671A/en
Application filed by Charm Engineering Co Ltd filed Critical Charm Engineering Co Ltd
Publication of CN107437503A publication Critical patent/CN107437503A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32366—Localised processing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32366—Localised processing
    • H01J37/32385—Treating the edge of the workpieces

Abstract

The present invention proposes a kind of substrate processing method using same, and it is included：Prepare in substrate of the one side formed with the first film and casing bore；Substrate is placed in chamber interior, chamber interior possesses the multiple shower heads that can supply multiple gases with plasmoid respectively；Using multiple shower heads the second film is formed in the one side of the first film and the inside face of casing bore；To being etched using the formation of multiple shower heads in a part for the second film of the inlet portion of casing bore；And sequentially it is repeated a number of times and forms the process of the second film the thickness of the second film is controlled with being etched to a part for the second film；And when manufacturing the capacitor of cylinder structure, the plasma of process gas can be uniformly spread on substrate in the state of the narrower intervals between substrate and shower head are made, successfully remove the protrusion formed in the film of the inlet portion of casing bore.

Description

Substrate processing method using same
Technical field
The present invention relates to a kind of substrate processing method using same, more specifically, is related to a kind of capacitor in manufacture cylinder structure When, the plasma of process gas can be uniformly spread to base in the state of the narrower intervals between substrate and shower head are made On plate, the substrate processing method using same formed in the protrusion of the inlet portion of casing bore is successfully removed.
Background technology
Tapered into and cell size with dynamic random access memory (DRAM) design rule (Design Rule) (Cell size) reduces, and the area of capacitor (Capacitor) reduces.This trend is followed, in order to ensure element is acted The direction of the electric capacity of required capacitor and structure towards the lower electrode effective surface area of increase capacitor of capacitor is carried out Improve.Now, there can be the improved of the capacitor of the effect of increase effective surface area on the two sides using lower electrode There is three-dimensional cylinder structure in structure.
On the other hand, ald processing procedure (Atomic Layer Deposition process, ALDprocess) is Multiple reactants, such as process gas are sequentially supplied to substrate and form the processing procedure of film.Passing through ald processing procedure And in the case where substrate forms film, it can prevent from polluting caused by gas phase reaction, be formed by ald processing procedure It is very excellent in the physical characteristic and electrical characteristics of the film of substrate.Also, can be with very thin by ald processing procedure The excellent film of film quality is precisely defined at substrate by thickness.Therefore, when manufacturing the capacitor of the cylinder structure, in dielectric Ald processing procedure is applied flexibly in formation of film etc..
However, being tapered into the casing bore size of capacitor, capacitor is manufactured even by ald processing procedure, Also the protrusion (overhang) of dielectric film can be formed in the inlet portion of casing bore.Therefore, to be formed in the past in order to remove in cylinder The protrusion of the inlet portion in hole, condense film via other heat treatment, but this mode is very difficult to remove completely and dashed forward Go out thing.
[prior art literature]
[patent document]
(patent document 1) KR10-2006-0000892A
(patent document 2) KR10-2008-0020202A
The content of the invention
[the invention problem to be solved]
Present invention offer is a kind of when manufacturing the capacitor of cylinder structure, can successfully remove the entrance to be formed in casing bore The substrate processing method using same of the protrusion in portion.
Present invention offer is a kind of when manufacturing the capacitor of cylinder structure, substrate can will not be caused damage and remove and to be formed In the substrate processing method using same of the protrusion of the inlet portion of casing bore.
Present invention offer is a kind of when manufacturing the capacitor of cylinder structure, can be formed uniformly the substrate of the thickness of dielectric film Processing method.
Present invention offer is a kind of when manufacturing the capacitor of cylinder structure, can be partly to the thickness of desired film layer It is controlled and is formed uniformly the substrate processing method using same of the film layer.
Present invention offer is a kind of when manufacturing the capacitor of cylinder structure, can be equal by the gas excited with plasmoid The substrate processing method using same being diffused into evenly on substrate.
Present invention offer is a kind of when manufacturing the capacitor of cylinder structure, can be wide by the gas excited with plasmoid The substrate processing method using same being diffused into generally on substrate.
[means to solve the problem]
The substrate processing method using same of embodiments of the present invention includes following process：Prepare in one side formed with the first film and vapour The process of the substrate of cylinder holes；The substrate is placed in the multiple clusters for possessing and can supplying multiple gases with plasmoid respectively Penetrate the process of the chamber interior of head；Using the multiple shower head in the one side of first film and the inside face of the casing bore Form the process of the second film；And to utilizing the formation of the multiple shower head at one of the second film of the inlet portion of the casing bore Divide the process being etched.
After the process being etched to a part for second film, following process can be included：Sequentially it is repeated more Process that the secondary process for forming second film and the part to second film are etched and to the thickness of second film Spend the process being controlled.
First film can be included containing at least one of carbon film, silicon-containing film and graphene film film, the casing bore it is interior Portion face can be included containing any of carbon film, silicon-containing film and graphene film film.
Second film can include dielectric film, and the part formed in the second film of the inlet portion of the casing bore includes institute State the protrusion of the second film.
Following process can be included by forming the process of second film：The process being controlled to the temperature of the substrate；It is right It is prepared with the process that the internal pressure of the chamber of the substrate is controlled；And by forming multiple gases of second film Respective plasma is supplied to the process of the substrate.
Can be by forming multiple spray-holes in the multiple shower head by the respective plasma of the multiple gas The substrate is simultaneously or sequentially supplied to, the multiple respective plasma of gas is produced in the outside of the chamber or described The inside of shower head.
The area of the export department of the spray-hole is smaller than the area of inlet portion.
The process being etched to a part for second film can include following process：The temperature of the substrate is carried out The process of control；The process that the internal pressure of chamber to being mounted with the substrate is controlled；And will be etching described The respective plasma of multiple gases of two films is supplied to the process of the substrate.
Can be by forming multiple spray-holes in the multiple shower head by the respective plasma of the multiple gas The substrate is simultaneously or sequentially supplied to, the multiple respective plasma of gas is produced in the outside of the chamber or described The inside of shower head.
The area of the export department of the spray-hole is smaller than the area of inlet portion.
Can be by forming multiple spray-holes in the multiple shower head and respectively will be the multiple with plasmoid Gas is supplied on the substrate, and when the width of the export department of the spray-hole is set into 1, the width of inlet portion can be 1.1 To 3.
Can be by forming multiple spray-holes in the multiple shower head and respectively will be the multiple with plasmoid Gas is supplied on the substrate, and the inner peripheral surface of the spray-hole is formed as taper or Wen's shape.
When the inner peripheral surface of the spray-hole is formed as taper, the inner peripheral surface of the spray-hole can include to be arranged along the vertical direction The multiple inclined planes for arranging and being connected to each other, the gradient of at least any inclined plane in the multiple inclined plane are inclined with least another The gradient on inclined-plane is different.
In the multiple inclined plane, the inclination positioned at opposite lower can be more than positioned at the gradient of the inclined plane of opposite upper The gradient in face, or positioned at opposite upper inclined plane gradient be less than positioned at opposite lower inclined plane gradient.
When the inner peripheral surface of the spray-hole is formed as Wen's shape, the nozzle throat of the spray-hole may be formed at the spray The export department of perforation or export department from the spray-hole separate and formed to upside.
When the inner peripheral surface of the spray-hole is formed as Wen's shape, can be the spray-hole inner peripheral surface from upside towards under Gradient increases or reduced from upside towards gradient during downside during side.
[The effect of invention]
According to the embodiment of the present invention, when manufacturing the capacitor of cylinder structure, substrate can not be caused damage and suitable The protrusion to be formed in the inlet portion of casing bore is removed sharply.Thus, can be partly to desired film, such as dielectric film Thickness is controlled and is formed uniformly the thickness of the film.Thus, the reliability of processing procedure can be improved, it can be ensured that capacitor Quality.Also, according to the embodiment of the present invention, it will can be swashed when manufacturing the capacitor of cylinder structure with plasmoid The gas of hair is uniformly spread on substrate, and the gas that excited with plasmoid can be widely diffused on substrate.By This, it is in the state of can fully narrowing at the interval for making dispenser, such as shower head and substrate, the plasma of gas is uniform Ground is diffused on substrate.Thus, gas consumption can be reduced, process efficiency, the evaporation of such as film and etching efficiency can be improved.
For example, when using the capacitor of ald processing procedure manufacture cylinder structure, substrate is placed in possess can be only The chamber interior of multiple shower heads of multiple gases and its plasma is on the spot supplied, by the area of inlet portion compared with export department Spray-hole that area is more narrowly formed and by the plasma diffusion of gas that is deposited and etched to film to substrate On, sequentially implement film vapor deposition and protrusion etching repeatedly.
Thus, during film is formed, substrate can not be caused damage and successfully remove to be formed to enter in casing bore The protrusion of oral area, partly the thickness of desired film, such as dielectric film can be controlled and be formed uniformly described Film, so as to which plural layers are formed into the whole area on the substrate of the inlet portion comprising casing bore with uniform thickness Domain.Also, during film is formed, substrate can be made to be located at spray-hole and nearby consume less gas, make the grade of gas from Daughter is uniformly spread on substrate.
Brief description of the drawings
Fig. 1 (a) to Fig. 1 (f) is the processing procedure figure of the substrate processing method using same of embodiments of the invention.
Fig. 2 is the precedence diagram of the substrate processing method using same of embodiments of the invention.
Fig. 3 is the skeleton diagram of the substrate board treatment of embodiments of the invention.
Fig. 4 is the Local map of the substrate board treatment of embodiments of the invention.
Fig. 5 is the profile of the A-A ' parts of cutting drawing 4 and the spray-hole of expression.
Fig. 6 (a) to Fig. 6 (f) is the skeleton diagram of embodiments of the invention and the spray-hole of variation.
Embodiment
Hereinafter, referring to the drawings, embodiments of the invention are illustrated in detail.However, the present invention be not limited to Lower disclosed embodiment, can be realized in the form of different.Wherein, embodiments of the invention are in order that the announcement of the present invention It is more complete and one of ordinary skill in the art is known the category of invention completely and is provided.In order to illustrate the present invention Embodiment, can turgidly represent accompanying drawing, and in figure, identical symbol represents identical key element.
The present invention relates to a kind of when manufacturing the capacitor of cylinder structure, the entrance to be formed in casing bore can be successfully removed The substrate processing method using same of the protrusion in portion.Hereinafter, manufactured with the cylinder structure capacitor of semiconductor memery device manufacturing sector Embodiment is illustrated in detail on the basis of processing procedure.However, it is of the invention when manufacturing display device or semiconductor element, It can be applied to be formed on substrate in the various processing procedures of various films in a variety of ways.
" top " to illustrate in the term of embodiments of the invention is intended to the object illustrated (hereinafter referred to as Inscape) a part, it refers to the upper part of inscape.Also, " bottom " is a part for inscape, it refers to composition The lower part of key element.Also, " on ' refer to the position that directly/indirectly connects with the upper surface of inscape or refer to directly/ It is grounded the scope acted to the upper surface of inscape.Also, " under " refer to the directly/indirectly following table with inscape The position or refer to the scope directly/indirectly acted to the lower surface of inscape that face connects.Also, " simultaneously " it can refer to Such as upper surface in the exterior face of inscape.The definition of these terms helps to understand embodiment, and is not used to limitation originally Invention.
Fig. 1 (a) to Fig. 1 (f) is the processing procedure figure of the substrate processing method using same of embodiments of the invention.Now, Fig. 1 (a), Fig. 1 (b), Fig. 1 (c), Fig. 1 (d) and Fig. 1 (e) are followed successively by the processing procedure figure for the process for representing prepared substrate, represent to form the mistake of the second film The processing procedure figure for the process that the processing procedure figure of journey, expression are etched a part for the second film, represent to be concatenated to form the mistake of the second film The processing procedure figure of journey and expression etch the processing procedure figure of the process of the second film repeatedly.In addition, Fig. 1 (f) is to represent the thickness after to the second film Degree forms the processing procedure figure of the process of tertiary membrane after being controlled.Also, Fig. 2 is the substrate processing method using same of embodiments of the invention Precedence diagram.
Reference picture 1 (a) illustrates to the substrate processing method using same of embodiments of the invention in detail to Fig. 1 (f) and Fig. 2. The substrate processing method using same of embodiments of the invention includes following process：Prepare in one side formed with the first film 20 and casing bore 30 The process of substrate 10；Substrate 10 is placed in and possesses and multiple shower heads of multiple gases can be supplied with plasmoid respectively The process of chamber interior；Using multiple shower heads the second film 40 is formed in the one side of the first film 20 and the inside face of casing bore 30 Process；And the mistake to being etched using the formation of multiple shower heads in the protrusion 41 of the second film of the inlet portion 31 of casing bore Journey.Also, the substrate processing method using same of embodiments of the invention can wrap after the process being etched to the protrusion 41 of the second film Containing following process：Sequentially it is repeated a number of times the process to form the second film 40 and the protrusion 41 to the second film is etched Process and the process being controlled to the thickness of the second film 40.
First, implement to prepare the process in substrate 10 of the one side formed with the first film 20 and casing bore 30.Now, the first film 20 can include containing at least one of carbon film, silicon-containing film, graphene film film.Also, using in oxygen-containing gas and fluoro-gas The plasma of at least any gas a part for the first film 20 is etched and forms casing bore 30, casing bore 30 it is interior Portion face can be formed in a manner of comprising containing any of carbon film, silicon-containing film, graphene film film.Certainly, the first film 20 and vapour Cylinder holes 30 can also be formed in addition to above-mentioned film by may be formed at any of the various films on substrate 10 film.
Prepare that in the process of substrate 10 of the one side formed with the first film 20 and casing bore 30 following process can be included：In substrate 10 one side forms the process of plural layers；The one side of plural layers is etched and forms the process in hole；And in multi-layer thin Film and hole internal area layer specific film and substrate 10 while form the process of the first film 20 and casing bore 30.
Specifically, prepare that in the process of substrate 10 of the one side formed with the first film 20 and casing bore 30 following mistake can be included Journey：In a face lamination of substrate 10 process of plural layers is formed containing at least one of carbon film and silicon-containing film film；To multilayer The one side of film carries out local etching and forms the process in hole；And in the one side of plural layers and the internal area layer graphene in hole Film and the one side in substrate 10 forms the process of the first film 20 and casing bore 30.
Now, the mistake of plural layers is formed containing at least one of carbon film and silicon-containing film film in a face lamination of substrate 10 Journey is as follows.
Semiconductor substrate (chip (wafer)) of the substrate 10 for example formed with specific substructure one side for example on Surface forms the first expendable film 21 and the second expendable film 22.Now, the first expendable film 21 is by containing carbon film, such as a-C：H films or rotation Apply carbon (Spin On Carbon, SOC) film to be formed, the second expendable film 22 is formed by silicon-containing film, such as silicon oxide film.Also, it is Prepare to be formed the region of the lower electrode of cylinder structure, the first expendable film 21 and the second expendable film 22 can be with specific thickness Formed, such as can be withThickness above is formed.
In addition, in one side such as upper side the first hard shade film 23, second of sequentially lamination formation of the second expendable film 22 Hard shade film (not shown), the 3rd hard shade film (not shown), light-sensitive surface is formed in the upper side of the 3rd hard shade film Pattern (not shown).Now, the first hard shade film 23 is for example formed by silicon nitride film.Second hard shade film is for example by a-C： H films or SOC films etc. are formed containing carbon film.3rd hard shade film is for example formed by silicon oxide film or silicon nitride film.Photosensitive film figure The region of lower electrode to make to form cylinder structure patterns in a manner of exposing.
Thus, it can be formed in the one side such as upper side lamination of substrate 10 and include the plural layers containing carbon film and silicon-containing film.
Also, the process for carrying out local etching to the one side of plural layers and forming hole is as follows.Using photosensitive film figure as Etching shade and the 3rd hard shade film is etched using the plasma of fluoro-gas, using the 3rd hard shade film as Etch shade and the second hard shade film is etched using the plasma of oxygen-containing gas, at the same time remove light-sensitive surface figure Case, the plasma of fluoro-gas is utilized using the second hard shade film as etching shade to the first hard shade film 23 and the Two expendable films 22 are etched, and at the same time remove the 3rd hard shade film, using the first hard shade film 23 as etching shade And the first expendable film 21 is etched using the plasma of oxygen-containing gas, and remove the second hard shade film.Now, One expendable film 21, the second expendable film 22, the first hard shade film 23 can keep vertical distribution in the one side of substrate 10.Thus, may be used Formed in the one side such as top facet etch of substrate 10 to form the hole of the lower electrode of cylinder structure.
Also, plural layers and hole internal area layer graphene film and in the while formation first of substrate 10 The process of film 20 and casing bore 30 is as follows.
After keeping inside face of the one side of plural layers of vertical distribution with hole to form crystal seed film 24, to the crystal seed film 24 progress code-patterns (blanket) etch and only remain the crystal seed film 24 to be formed in the inside face in hole.In addition, it will act as capacitor Conductive film, such as graphene film lamination of lower electrode form crystal seed film in the one side of plural layers and the inside face in hole 24.Now, crystal seed film 24 is for example formed by silicon nitride film, and graphene film 25 is for example formed using CxHy hydrocarbon compound.
Thus, as shown in Fig. 1 (a), the first film 20 and casing bore 30 can be formed in the one side of substrate 10.
After preparing in one side formed with the substrate 10 of the first film 20 and casing bore 30, the support of substrate 10 is placed in and possessed Multiple shower heads, such as multiplet or the dual knot that respectively can be supplied to multiple gases with plasmoid on substrate 10 The chamber interior (process S100) of the shower head of structure.Now, substrate 10 may be mounted to the support for the bottom to be formed on the inside of chamber Portion, towards multiple shower heads, the shower head of such as dual structure for forming the top on the inside of chamber.On the other hand, dual knot The shower head of structure can possess as follows：The multiple gases excited with plasmoid can be simultaneously or sequentially ejected into On substrate 10.
Hereafter, implement to form the second film 40 in the one side of the first film 20 and the inside face of casing bore 30 using multiple shower heads Process (process S200).Now, the second film 40 can include dielectric film.For example, dielectric film can include ZrO2-Al2O3-ZrO2Film, ZrO2-ZrO2-Al2O3Any of film, Oxide-Nitride-Oxide films, Nitride-Oxide films film.Or dielectric Film can include zirconium oxide (ZrO3) film, hafnium oxide (HfO2) film, radium oxide (La2O5) film, tantalum oxide (Ta2O5) film, strontium titanium oxides (SrTiO3) any of film film.That is, dielectric film can be oxide-based film, nitride-based film or have multiple laminations The film of structure.On the other hand, casing bore 30 inside face formed the second film 40 during, can as shown in Fig. 1 (b) The inlet portion 31 of casing bore protrudes protrusion 41, such as protrusion for forming the second film.
The process for forming the second film 40 in the one side of the first film 20 and the inside face of casing bore 30 using multiple shower heads can Include following process：The process being controlled to the temperature of substrate 10；The internal pressure of chamber to being prepared with substrate 10 is carried out The process of control；And base will be supplied to form the respective plasma of multiple gases of the second film 40 using multiple shower heads Process on plate 10.
In order to be controlled to the temperature of substrate 10, can possess heater in the chamber interior for being prepared with substrate 10, can profit Temperature with the heater by the temperature control of substrate 10 into such as 150 DEG C to 400 DEG C of scope.If by the temperature of substrate 10 Degree control is made smaller than such as 150 DEG C, then can be difficult to the second film 40 is deposited.If by the temperature control of substrate 10 into more than for example 400 DEG C, then the second film 40 can be damaged.The temperature range of the substrate 10 equivalent to forming the second film 40 on the substrate 10 Temperature is deposited, can be different according to the material of the second film 40.In order to which the internal pressure of the chamber to being prepared with substrate 10 is controlled System, the internal pressure of the chamber of substrate 10 will be prepared with using the vavuum pump for the side for being connected to the chamber for being prepared with substrate 10 Control into below 20mTorr pressure.Specifically, the internal pressure that can will be prepared with the chamber of substrate 10 is controlled into 3mTorr To the pressure of 20mTorr scopes.If the internal pressure control for the chamber for being prepared with substrate 10 is made smaller than into 3mTorr, tying It can be difficult to the second film 40 is deposited on structure.
As described above, substrate 10 is being controlled into low temperature and the internal pressure control of the chamber of substrate 10 will be prepared with into low , simultaneously will be respective to form multiple gases of the second film 40 by the multiple spray-holes formed in multiple shower heads after pressure Plasma is supplied on substrate 10, simultaneously implements plasma chemistry evaporation (Plasma Enhanced Chemical Vapor Deposition, PECVD).Now, multiple gases can be included the evaporation gas of the second film 40 is deposited.For example, steam Plating gas can be to contain respectively to form multiple evaporation gases of multiple compositions of the second film 40, multiple that appointing in gases is deposited One evaporation gas can be oxygen-containing gas.On the other hand, to during supplying the respective plasma of multiple gases on substrate 10, Also specific grid bias power supply can be applied to substrate 10.
In order to be supplied to form the respective plasma of multiple gases of the second film 40 on substrate 10, using possessing Any one in the shower head of the dual structure on the top being prepared with the inside of the chamber of substrate 10, used in shower head internal receipt Excited with forming any evaporation gas in multiple evaporation gases of the second film 40 with plasmoid.Hereafter, cluster is passed through Penetrate the spray-hole of head and the respective plasma of the multiple gas is supplied or is ejected on substrate 10.Also, utilize and possess Another shower head in the shower head of the dual structure on the top being prepared with the inside of the chamber of substrate 10, inside shower head with Plasmoid is received to form another evaporation gas in multiple evaporation gases of such as dielectric film.Hereafter, supplied Give or be ejected on substrate 10., can be in the one side such as upper side of the first film 20 and the inside of casing bore 30 by the process The dielectric film of high-quality is deposited on face.
Now, it can simultaneously or sequentially implement to be utilized respectively and possess multiple shower heads in chamber interior by multiple evaporation gases Respective plasma is supplied to the process on substrate 10.Also, the plasma for being supplied to each evaporation gas of substrate 10 can Substrate is supplied to after generation is supplied to shower head in the outside of chamber or producing in shower head as the above Substrate is supplied to behind portion.
On the other hand, can be by forming multiple spray-holes in multiple shower heads by each evaporation when stating process on the implementation The plasma of gas is uniformly spread to form uniform dielectric film on substrate 10 with extensive area.The reason is that The spray-hole is in the area of export department compared with the structure that the area of inlet portion is smaller formed.In the base to embodiments of the invention When plate processing unit illustrates, detailed description related to this is together carried out.
Hereafter, implement to being etched using the formation of multiple shower heads in a part for the second film of the inlet portion of casing bore Process (process S300).Now, the protrusion 41 formed in the second film of the inlet portion 31 of casing bore can include the second film 40 Protrusion (overhang).
To the mistake being etched using the formation of multiple shower heads in the protrusion 41 of the second film of the inlet portion 31 of casing bore Journey can include following process：The process being controlled to the temperature of substrate 10；To the internal pressure for the chamber for being prepared with substrate 10 The process being controlled；And by etching the mistake that the respective plasma of multiple gases of the second film 40 is supplied on substrate 10 Journey.
On the other hand, will be supplied to etch the respective plasma of multiple gases of the second film 40 on substrate 10 When, the respective plasma of multiple gases can be supplied to substrate 10 by the multiple spray-holes formed in multiple shower heads On.Now, the area of the export department of multiple spray-holes is smaller than the area of inlet portion, thus can equably spray plasma It is supplied on substrate 10.
, will in the heater being prepared with the chamber of substrate 10 using possessing in order to be controlled to the temperature of substrate 10 The temperature control of substrate 10 is into 150 DEG C to 400 DEG C of scope.If for example, by the temperature control of substrate 10 into less than 150 DEG C, It can then be difficult to etch the second film 40.If by the temperature control of substrate 10 into more than 400 DEG C, the second film 40 can be damaged.Now Temperature range to form the etch temperature of the second film 40 on the substrate 10 equivalent to etch, can be according to the material of the second film 40 Matter and it is different.In order to which the internal pressure of the chamber to being prepared with substrate 10 is controlled, using the vavuum pump possessed in chamber The internal pressure control of the chamber of substrate 10 will be prepared with into below 20mTorr pressure, or controllable 3mTorr is made extremely The pressure of 20mTorr scope.Now, if the internal pressure control for the chamber for being prepared with substrate 10 is made smaller than into 3mTorr, It can then be difficult to the second film 40 is deposited in structure.
As described above, substrate 10 is being controlled into low temperature and the internal pressure control of the chamber of substrate 10 will be prepared with into low After pressure, substrate will be supplied to and to etch the respective plasma of multiple gases of the second film 40 using multiple shower heads Protrusion 41, such as protrusion of two films are etched.
On the other hand, multiple gases can include the multiple etching gas that can be used for the second film 40 of etching, wherein at least one Etching gas can be fluoro-gas.Also, can be to base to during supplying the respective plasma of multiple gases on substrate 10 Plate 10 applies specific grid bias power supply.
When to substrate supply to etch multiple gases of the second film 40 respective plasma, it can be utilized respectively and possess The respective plasma of multiple etching gas is supplied on substrate 10 in multiple shower heads of chamber interior, can be simultaneously or sequentially Implement the process.Also, being supplied to the plasma of each etching gas of substrate 10 can supply producing in the outside of chamber It is supplied to after any shower head being given in multiple shower heads on substrate 10 or is producing another shower in multiple shower heads It is supplied to behind the inside of head on substrate 10.
, also can be by forming multiple spray-holes in multiple shower heads by each etching gas when implementing the process Plasma is uniformly spread on substrate 10 with extensive area.The reason is that spray-hole relatively enters in the area of export department The structure that the area of oral area is smaller formed.When the substrate board treatment to embodiments of the invention illustrates, together enter Row detailed description related to this.
, can be uniform in the thickness of the remainder of the second film 40 of the one side of the first film 20 according to formation by the process Ground controls the thickness to be formed in the second film 40 of the inlet portion of casing bore 30.
Hereafter, implement sequentially to be repeated a number of times or formed at least once the process of the second film and the part to the second film The process being etched and the process (process S400) being controlled to the thickness of the second film.
That is, by process before and implement as shown in Fig. 1 (b) and Fig. 1 (c) once the first film 20 one side and The inside face of casing bore 30 forms the second film 40, remove formed the second film of the inlet portion 31 of casing bore protrusion 41 one The process of consecutive, if the thickness control of the second film 40 implements second into size d1 as shown in Fig. 1 (d) and Fig. 1 (e) It is secondary to form the second film 40 in the one side for the second film 40 that thickness is size d1 and the inside face of casing bore 30, remove and formed in cylinder The a series of process of the protrusion 41 of second film of the inlet portion 31 in hole and by the thickness control of the second film 40 into size d2.Separately Outside, the etching that can be repeated a number of times the evaporation and protrusion of the second film 40 is formed equably controlling the thickness of the second film 40 For desired thickness.If forming the second film 40, it can remove the gas for remaining in chamber or byproduct particles and terminate institute State process.
Now, the process can substrate 10 be arranged on possess dual structure shower head chamber interior in the state of, Lifting or loading and unloading without substrate 10 etc. are mobile and continuously implement.On the other hand, when being deposited and etching the second film 40, The power supply used to form the plasma of process gas can realize various regulations in the range of maximum 3kW.
Hereafter, the process in the one side of the second film 40 and the inside face formation tertiary membrane 50 of casing bore 30 is implemented.The mistake Journey can be implemented after the process being etched at least a portion of the second film 40 or is controlled in the thickness to the second film 40 Process after implement.
That is, can be after the etching of evaporation and protrusion of second film 40 be implemented, the second film in control into size d1 Tertiary membrane 50 is formed on 40.Or it can controlled after the etching of evaporation and protrusion of second of second film 40 is implemented repeatedly Tertiary membrane 50 is formed on into size d2 the second film 40.Or the evaporation and protrusion of multiple second film 40 can implemented repeatedly Etching after, form tertiary membrane 50 on second film 40 of the control into desired thickness d k as shown in Fig. 1 (f).Now, Forming the process of tertiary membrane 50 can implement after by using the other device transfer substrate 10 to carry out successive process.
In order to form tertiary membrane 50, implement to form the mistake of tertiary membrane 50 on the second film 40 in a manner of being embedded to casing bore 30 Journey.For example, the temperature control of substrate 10 will be prepared with the internal pressure control of the other device of substrate 10 into specified temp Into specified pressure, specific crystal seed film is formed on the second film 40, supplies or is formed afterwards specific process gas and heat or wait Gas ions and tertiary membrane 50 is deposited.Or by the temperature control of substrate 10 into specified temp, the other of substrate 10 will be prepared with The internal pressure control of device into specified pressure, to the second film 40 on supply or formed specific process gas and heat or plasma Body and tertiary membrane 50 is deposited.Now, tertiary membrane 50 is comprising silicon-containing film, containing a kind of electric conductivity in metal film and graphene film Film, can be the various films of the effect of executable upper electrode.
As described above, the substrate processing method using same of embodiments of the invention, which is applied, is utilizing the shower head with dual structure Chamber, such as capping (cap) processing procedure of the dynamic random access memory (DRAM) of duoplasmatron source chamber, so as to right When the dielectric film of highly integrated capacitor is deposited, dielectric film is repeated while damage can not be caused to substrate or element It is deposited and etches and the dielectric film of uniform thickness is formed with high-quality.Now, when carrying out processing procedure, by the area of inlet portion compared with Spray-hole that the area of export department is more narrowly formed and by being deposited and the plasma diffusion of the gas of etch thin film is to base On plate, so the interval between substrate and shower head can be made fully to narrow and reduce the consumption of gas, by the plasma of gas Uniformly and widely it is diffused on substrate.
In order to help to understand the present invention, to the embodiment of the device of the substrate processing method using same of application embodiments of the invention Illustrate.
Fig. 3 is the skeleton diagram of the substrate board treatment of embodiments of the invention, and Fig. 4 is at the substrate of embodiments of the invention The Local map of device is managed, Fig. 5 is the profile of the A-A ' parts of cutting drawing 4 and the spray-hole of expression.
Fig. 6 (a) to Fig. 6 (f) is the skeleton diagram of embodiments of the invention and the spray-hole of variation.Now, Fig. 6 (a) is The skeleton diagram of the spray-hole of embodiments of the invention.Also, Fig. 6 (b) and Fig. 6 (c) are the conical jets of the variation of the present invention The skeleton diagram in hole.Also, Fig. 6 (d), Fig. 6 (e) and Fig. 6 (f) are the skeleton diagrams of Wen's shape spray-hole of the variation of the present invention.
Reference picture 3, the substrate board treatment of embodiments of the invention include：Chamber 100, internally with reaction compartment； Supporting part 200, the bottom formed on the inside of chamber 100, so as to supporting substrate 10；Supply unit 300, can be supplied to to substrate The mode of the 10 multiple gases handled is formed；Dispenser 400, can be carried out to the multiple gases received from supply unit 300 The mode distributed and be fed separately to the reaction compartment of chamber 100 is formed, and chamber is configured in a manner of in face of supporting part 200 The top of 100 inner sides；First plasma generator 500, at least a portion of dispenser 400 is connected to, it is multiple in order to make Any gas in gas forms plasma；And second plasma generator 600, form the spy in the outside of supply unit 300 Determine region, plasma is formed in order to another gas made in multiple gases, density can be produced and produced higher than the first plasma The plasma of raw device 500.
Substrate 10, which can include, is used for the silicon substrate for manufacturing semiconductor element or the glass substrate for manufacturing display device Deng.Also, substrate 10 is to apply the substrate in the substrate processing method using same of embodiments of the invention, can include to manufacture cylinder knot The substrate of the capacitor of structure.Now, the shape of substrate 10 can be that circular plate shape or four side plate shapes etc. are variously-shaped.
Multiple gases can include evaporation gas and etching gas.Now, it can be a variety of that gas, which is deposited, such as can include first Gas and the second evaporation gas etc. is deposited.Each contained component element can be different for multiple evaporation gases, and any of which is deposited Gas for example can be the gas containing oxygen.Now, in these gases, the inert gas such as argon gas can be mixed into as load Gas.
Also, etching gas can be a variety of, such as can include the first etching gas and the second etching gas etc..Multiple etchings Each contained component element can be different for gas, and any of which etching gas for example can be fluoro-gas.Now, in these gas In body, the inert gas such as argon gas can be mixed into as carrier gas.
When the substrate board treatment to the present embodiment illustrates, without especially distinguishing evaporation gas and etching gas In the case of, the first evaporation gas and the first etching gas are referred to as " the first process gas ", by the second evaporation gas and the Two etching gas are referred to as " the second process gas ".Also, the first process gas and the second process gas are referred to as " processing procedure gas Body ".
On the other hand, for be deposited and etch thin film gas component element can be according to the composition of film it is various into Divide element, the present invention is not particularly limited to special component element or the component element.Also, in order to not make the master of the present invention Purport is smudgy, and the detailed description to multiple gases is omitted in embodiment.
Chamber 100 is, for example, reaction chamber, possesses specific reaction compartment, and airtightly keep the reaction compartment.Chamber Room 100 can include reacting part 100a and lid 100b.Reacting part 100a can include the bottom of specific flat shape and along bottom The side of sidewall portion that edge upwardly extends, can possess specific space between bottom and side of sidewall portion.Lid 100b is formed as and reacted Shape corresponding to portion 100a shape and be attached to reacting part 100a top.Reacting part 100a is attached to and can by covering 100b Reaction compartment is internally formed in chamber 100, can airtightly keep reaction compartment.Now, the shape of reaction compartment and substrate 10 Shape it is corresponding, such as can be drum.
On the other hand, reacting part 100a bottom can be penetrated and installs blast pipe 110, can connected and be vented in blast pipe 110 Unit (not shown).Exhaust unit various vavuum pumps such as can include turbomolecular pump, ionic pump or cryogenic pump.Can be by true Empty pump and by the pressure of the reaction compartment vacuum control of chamber 100 to specific pressure, such as 0.1mTorr or so.
Also, it can be formed on the top of the inner side of chamber 100 to make the insulator that dispenser 400 insulate with chamber 100 120.Now, insulator 120 can be formed in a manner of the upper side for coating dispenser 400 and side in chamber 100 and distribution Between portion 400.
Supporting part 200 possesses in the bottom of the inner side of chamber 100, set arrive with dispenser 400 to position.It can support Portion 200 possesses electrostatic chuck or vacuum chuck etc., to be easily installed supporting substrate 10.Thus, can be adsorbed by electrostatic chuck Supporting substrate 10 passes through vacuum chuck adsorbent support substrate 10.The upper side of supporting part 200 is formed as the shape with substrate 10 Shape corresponding to shape.For example, the upper side of supporting part 200 is formed as circle.Now, support can be larger made compared with substrate 10 The size of the upper side in portion 200.
Supporting part 200 possesses lifting unit 210 in bottom.Lifting unit 210, which plays, makes supporting part 200 relative to dispenser 400 The effect advanced and retreated.It can be made by lifting unit 210 installed in the substrate 10 of supporting part 200 to approach dispenser 400 Mode positions.Supporting part 200 may be connected to grid bias power supply 220.Grid bias power supply 220 can enter to the ion energy for inciding substrate 10 Row control.
On the other hand, supporting part 200 can internally possess heater (not shown).Heater can for example include Halogen lamp LED. Heater can be generated heat with desired temperature, and the temperature of substrate 10 is controlled using emittance.Also, support Portion 200 can internally possess cooling tube (not shown).Cooling tube can be such that refrigerant internally circulates, auxiliary in a manner of cooling down substrate 10 Help the temperature of control base board 10.Thus, the various systems handled substrate 10 can stably be implemented at the desired temperature Journey (film vapor deposition and etching etc.).
Supply unit 300 includes：Multiple gas storage sources (not shown), store multiple gases respectively；And multiple gas supplies Pipe, receive gas from gas storage source and be directed to dispenser 400.Now, multiple gas supply pipes can for example include the first gas Body supply pipe 310 and second gas supply pipe 320, can have respectively in first gas supply pipe 310 and second gas supply pipe 320 Valve and mass flow machine of the supply of standby controllable gas etc..
First gas supply pipe 310 can penetrate the central upper portion of chamber 100 and be connected to the first area of dispenser 400 S1, second gas supply pipe 320 can penetrate the top edge of chamber 100 and be connected to the second area S2 of dispenser 400.First The number of gas supply pipe 310 can be at least one, and second gas supply pipe 320 can be multiple.Now, second gas supply pipe 320 are made up of materials such as sapphire, quartz and ceramics and can be used, for example, as plasma generating tube.
Supply unit 300 can utilize multiple gas supply pipes to be prepared according to desired evaporation to the composition of the film of substrate 10 Multiple gases independently supply dispenser 400.
For example, in the case where the film for wanting evaporation to substrate 10 is silicon oxide film, by silicon-containing gas and can contain respectively Carrier of oxygen is supplied to multiple gas supply pipes and independently supplies dispenser 400.That is, can be supplied to first gas supply pipe 310 To silicon-containing gas, oxygen-containing gas can be supplied to second gas supply pipe 320.Now, silicon-containing gas can include SiH4Deng oxygenous Body can include O2、H2O and O3Deng.
Reference picture 3 and Fig. 4, dispenser 400 possess the multiple plates being bonded to each other, and can internally be formed can house gas and gas The space of at least one of the plasma of body.The bottom of dispenser 400 can be penetrated and form multiple spray-holes 431, now The export department 431b of spray-hole 431 area can be compared with inlet portion 431a area smaller formed.
Specifically, dispenser 400 possesses multiple plates that lamination combines each other, in order to internally form space.It can pass through The plate of the bottom surfaces for the formation dispenser 400 led in multiple plates is lower panel 430 and forms spray-hole 431, and supply unit 300 can pass through The plate of the upper side for the formation dispenser 400 led in multiple plates is upper board 410 and connected with the inner space of dispenser 400.
Hereinafter, the dispenser 400 of the substrate board treatment of embodiments of the invention is illustrated in detail.Dispenser 400 can include separate along the vertical direction arrangement and each other lamination combine multiple plates.Multiple plates for example can include upper board 410, Intermediate plate 420 and lower panel 430.Now, can possess diffuser plate 440 between upper board 410 and intermediate plate 420, can be in centre Possess insulating element 450 between plate 420 and lower panel 430, intermediate plate 420 and lower panel 430 can be penetrated along the vertical direction and filled If multiple connecting tubes 460.
Upper board 410, intermediate plate 420 and connecting tube 460 with reference to and form a shower head, intermediate plate 420, insulating element 450 are bonded to each other with lower panel 430 and form another shower head.By these shower heads, lamination is combined and can be in dispenser each other 400 form the shower head of dual structure.
That is, dispenser 400 can possess multiple shower heads, and multiple shower heads can be combined with one another to multiplet or multilayer knot Structure.For example, as described above, dispenser 400 can possess two shower heads being bonded to each other, to form dual structure.
Dispenser 400 can internally form specific space.The particular space formed inside dispenser 400 can include that This independent first area S1 and second area S2.Specifically, can possess second between upper board 410 and intermediate plate 420 Region S2, can possess first area S1 between intermediate plate 420 and lower panel 430.The first processing procedure can be supplied to first area S1 Gas, the second process gas can be supplied to second area S2.
Intermediate plate 420 and lower panel 430 are formed by conductive material and can be used as upper electrode and lower electrode.Thus, Plasma can be produced possessing the first area S1 between the intermediate plate 420 and lower panel 430.That is, dispenser 400 can The process gas supplied in first area S1 is activated into plasmoid.
On the other hand, second gas supply pipe 320 can be fed through to second area S2 and is activated into plasmoid Process gas, can pass through by multiple connecting tubes 460 that isolation material is formed by it is described activation into plasmoid system Journey gas is supplied to substrate 10.
As described above, produce plasma in the inside of dispenser 400 and the inside of supply unit 300 and be supplied to substrate 10, so can will not produce plasma near substrate 10.This prevents the substrate 10 caused by producing plasma Damage.
First gas supply pipe 310 can penetrate the central part of upper board 410 and extend.The edge of upper board 410 can be penetrated Portion and install second gas supply pipe 320.Upper board 410 can form flange in end in a manner of downward projection of, can be on top The flange lower end of plate 410 combines intermediate plate 420.
The central part of intermediate plate 420 can be penetrated and install first gas supply pipe 310.Intermediate plate 420 possesses to be installed respectively Multiple through holes 421 of multiple connecting tubes 460.Intermediate plate 420 can form flange in end in a manner of projecting upwards, can be in Between plate 420 flange upper end combine upper board 410 flange lower end.
Lower panel 430 can be attached to intermediate plate 420 by insulating element 450.Lower panel 430 can possess multiple spray-holes 431.Produce first area S1 process gas plasma can by multiple spray-holes 431 with first area S1 phases The spray-hole that connects and be ejected into substrate 10.
On the other hand, the plasma for being supplied to second area S2 process gas can pass through after by connecting tube 460 The spray-hole to connect with connecting tube 460 in multiple spray-holes 431 and be supplied on substrate 10.
Diffuser plate 440 can separate with upper board 410 and intermediate plate 420 respectively, be attached to the flange inner peripheral surface of upper board 410 Or the flange inner peripheral surface of intermediate plate 420.Second area S2 can be divided into by top and bottom by diffuser plate 440.For example, system Journey gas is available for being given to second area S2 top, equably spreads by the through hole 441 of diffuser plate 440 or is distributed to Two region S2 bottom.On the other hand, first gas supply pipe 310 can penetrate the central part of diffuser plate 440 and extend.
The multiple plate and diffuser plate 440 can be corresponding with the shape of substrate 10.For example, in the feelings that substrate 10 is circular plate shape Under condition, multiple plates and diffuser plate 440 can be circular plate shape.Or substrate 10 be four side plate shapes in the case of, multiple plates and Diffuser plate 440 can be four side plate shapes.
Insulating element 450 for example may be formed to have the ring-shaped of certain height, can be to connect the end of intermediate plate 420 Installed with the mode of the end of lower panel 430.Interval holding between intermediate plate 420 and lower panel 430 can be by insulating element 450 Desired interval, it can make to insulate between the intermediate plate 420 and lower panel 430.
The upper end of multiple connecting tubes 460 can be attached to the through hole 421 of intermediate plate 420 respectively, and lower end, which can be attached to, to be possessed A part in multiple spray-holes 431 of lower panel 430.Thus, can not be by producing process gas in first area S1 The interference of plasma and the plasma jet in second area S2 process gas will be supplied to the downside of lower panel 430. Now, the spray-hole to connect with the lower end of multiple connecting tubes 460 and the spray-hole that connects with first area S1 can it is adjacent to each other and It is evenly distributed and positions, so that the plasma of the first process gas and the plasma of the second process gas equably sprays To the downside of lower panel 430.
As shown in figure 5, the inner peripheral surface of spray-hole 431 is formed as taper (cone type), export department 431b width is small In inlet portion 431a width.Now, when the size d2 of the export department of spray-hole is set into 1, the chi of the inlet portion of spray-hole Very little d1 can be 1.1 to 3.In the case, the size d1 of the inlet portion of spray-hole can then make the Wen of spray-hole 431 closer to 3 Effect more increases.On the other hand, when the size d2 of the export department of spray-hole is set into 1, if the chi of the inlet portion of spray-hole Very little d1 then can be difficult to and make spray-hole 431 more than 3.
By the said structure of spray-hole 431, from the inner side 1 of the relative dispenser for be high pressure conditions to respect to being low pressure When the plasma of process gas is sprayed in the downside 2 of the dispenser of state, injection pressure can be reduced according to desired degree, can Increase jet velocity according to desired degree, effective projected area can be increased according to desired degree.
That is, can be to the outlet of spray-hole when spraying the plasma of process gas to the space formed with environment under low pressure Uniformly and widely spray the plasma of process gas in portion 431b lower section.Therefore, even if making the export department of spray-hole Interval between 431b and substrate is fully narrowed in the state of desired interval, also can be equal by the plasma of process gas It is diffused into evenly on the substrate formed with environment under low pressure, can prevents from producing wasted space (dead space) on substrate.For example, , can be by processing procedure in the state of the interval between the export department of spray-hole and substrate is fully narrowed about 10cm or so interval The plasma of gas is uniformly spread on the substrate formed with environment under low pressure.Now, between the export department of spray-hole and substrate Interval can be except above-mentioned numerical value in addition to according to wanting to be formed matching somebody with somebody for film on substrate or the desired film removed from substrate Side (recipe) and be various numerical value.
As shown in Fig. 6 (a), the tapered inner circumferential surface refers to when along bearing of trend perpendicular cuts spray-hole 431, the spray The section of perforation is formed as with the inner peripheral surface of the inclined rectilinear form of special angle.
On the other hand, reference picture 6 (a) is to Fig. 6 (f), and the structure of the spray-hole 431 of embodiments of the invention can be realized various Change.Hereinafter, the structure of the spray-hole 431 of the variation of the present invention is illustrated in detail.
The spray-hole 431 of the variation of the present invention can be multiple comprising arranging and being connected to each other along the vertical direction in inner peripheral surface Inclined plane, the gradient of at least any inclined plane in multiple inclined planes can be with least another inclined plane in multiple inclined planes not Together.As described above, in the variation of the present invention, part or all of difference of the gradient of inclined plane can be made and adjust and pass through spray The discharge characteristic of perforation 431 and the discharge characteristic formed immediately below the export department 431b of spray-hole.
For example, referring to Fig. 6 (b), in the spray-hole 431 of the first variation of the invention, positioned at the inclined plane of opposite upper Gradient be smaller than positioned at opposite lower inclined plane gradient.
Also, reference picture 6 (c), in the spray-hole 431 of the second variation of the invention, positioned at the inclined plane of opposite upper Gradient can be more than positioned at opposite lower inclined plane gradient.
Reference picture 6 (d) to Fig. 6 (f), the inner peripheral surface of the spray-hole 431 of other variations of the invention is formed as Wen Shape (venturi type).Now, the inner peripheral surface of Wen's shape refers to when along bearing of trend perpendicular cuts spray-hole 431, The section of the spray-hole is formed as with the inner peripheral surface of the inclined curve shape of special angle.
For example, referring to Fig. 6 (d), the inner peripheral surface of the spray-hole 431 of the 3rd variation of the invention is formed as Wen's shape, this When nozzle throat may be formed at the export department 431b of spray-hole.Herein, nozzle throat refers to the above-below direction in spray-hole 431 In whole region, the most narrow region of internal diameter.I.e., in the case, the internal diameter size of spray-hole 431 can be in export department 431b most It is small.
Also, reference picture 6 (e), the inner peripheral surface of the spray-hole 431 of the 4th variation of the invention are formed as Wen's shape, this When nozzle throat can separate and be formed to upside from the export department of spray-hole 431.I.e., in the case, the internal diameter of spray-hole 431 Size can be between export department 431b and inlet portion 431a ad-hoc location it is minimum.
When forming the spray-hole 431 of Wen's shape in this way, in the case of being changed in the position of nozzle throat, lead to The discharge characteristic in overspray hole 431 and the discharge characteristic formed immediately below the export department 431b of spray-hole can also change.
On the other hand, in the case of the situation of the 3rd variation and the 4th variation of the present invention of the invention described above, The inner peripheral surface of spray-hole 431 is in more from upside towards the downside then more increased structure of gradient.On the contrary, reference picture 6 (f), The inner peripheral surface of the spray-hole 431 of the 5th variation of the present invention is formed as Wen's shape, and now inner peripheral surface can be in more from upside direction The downside structure that then gradient more reduces.
As described above, in embodiments of the invention and variation, it is each by being carried out to the inner peripheral surface structure of spray-hole 431 Kind change, the flow immediately below the export department of spray-hole can be controlled into various desired flows.
On the other hand, although not shown, but embodiments of the invention and the spray-hole of variation 431 can be with along the vertical direction The inner peripheral surface for forming differently left and right sides centered on the hole central shaft (not shown) of the central part of spray-hole 431 is penetrated to tilt Degree.
For example, when perpendicular cuts spray-hole 431 observes section, the inner circumferential in left side centered on the central shaft of hole The gradient in face can be different from the gradient of the inner peripheral surface in right side.That is, can centered on the central shaft of hole spray-hole 431 Inner peripheral surface left field gradient be more than spray-hole 431 inner peripheral surface right side area gradient or spray-hole 431 Inner peripheral surface left field gradient be less than spray-hole 431 inner peripheral surface right side area gradient.Now, it is adjacent The gradient of inner peripheral surface between spray-hole forms pattern also can be different.
Also, although not shown, but embodiments of the invention and the spray-hole of variation 431 can be to penetrate along the vertical direction The inner peripheral surface that the spray-hole in left side is form differently centered on the plate central shaft (not shown) of the central part of dispenser 400 tilts The inner circumferential plane inclination of degree and the spray-hole on right side.
, can be to be located at left side centered on plate central shaft for example, when perpendicular cuts lower panel 430 observes section In spray-hole, the gradient for being in the inner peripheral surface in left side centered on the central shaft of hole respectively is more than the inner peripheral surface in right side Gradient, centered on plate central shaft and in the spray-hole on right side, respectively centered on the central shaft of hole and in right side Inner circumferential plane inclination is more than the inner circumferential plane inclination in left side.Or can be to be located at left side centered on plate central shaft In spray-hole, the gradient for being in the inner peripheral surface on right side centered on the central shaft of hole respectively is more than the inner peripheral surface in left side Gradient, centered on plate central shaft and in the spray-hole on right side, respectively centered on the central shaft of hole and in left side The gradient of inner peripheral surface is more than the gradient of the inner peripheral surface in right side.
Also, although not shown, but embodiments of the invention and the spray-hole of variation 431 can form differently close to Along the vertical direction penetrate dispenser 400 central part plate central shaft (not shown) spray-hole inner peripheral surface gradient, with It is relatively distant from the gradient of the inner peripheral surface of the spray-hole of plate central shaft.
For example, when perpendicular cuts lower panel 430 observes section, plate center is located adjacent to centered on plate central shaft The gradient of the inner peripheral surface of the spray-hole of the specific region of axle can be more than the spray-hole for the specific region for being located remotely from plate central shaft Inner peripheral surface gradient.Or it is located adjacent to the spray-hole of the specific region of plate central shaft centered on plate central shaft The gradient of inner peripheral surface is smaller than being located remotely from the gradient of the inner peripheral surface of the spray-hole of the specific region of plate central shaft.
As described above, in embodiments of the invention and variation, by further to the knot of the inner peripheral surface of spray-hole 431 Structure carries out various changes, can not only control the flow immediately below the export department of each spray-hole into various desired flows, and And it will can be controlled by the flow immediately below the integrally formed dispenser 400 of multiple spray-holes 431 into various desired flows.
Reference picture 3, the first plasma generator 500 is so that the first process gas can be excited into the side of plasmoid Formula is formed.The plasma producing method that can be applicable to the first plasma generator 500 includes capacitance coupling plasma (Capacitively Coupled Plasma, CCP) mode.
First plasma generator 500 can include：Electrode, possess in the side of dispenser 400 and opposite side；First electricity Source generator 510, the first high frequency electric source is applied to electrode；And ground terminal, earthing power supply is supplied to electrode.During electrode can include Between plate 420 and lower panel 430.For example, first high frequency electric source can be supplied to intermediate plate 420, it is grounded lower panel 430, and can be Possesses the plasma that the first area S1 between the intermediate plate 420 and lower panel 430 produces the first process gas.That is, First plasma generator 500 can will be excited into plasma by the first area S1 of dispenser 400 process gas Body state.
First power generators 510 can penetrate chamber 100 and be connected to intermediate plate 420, can apply the to first area S1 One high frequency electric source.Ground terminal can penetrate chamber 100 and be connected to lower panel 430, be grounded lower panel 430 to keep ground connection electricity Position.
Thus, form potential difference between intermediate plate 420 and lower panel 430 and can will pass through first area S1 processing procedure gas Body is excited into plasmoid.Now, in order to be excited into plasma, the interval between intermediate plate 420 and lower panel 430 is for example Can be more than 3mm.In first area the plasma for the process gas that S1 is excited can by the spray-hole 431 of lower panel 430 and It is ejected on substrate 10.
Second plasma generator 600 is formed in a manner of it the second process gas can be excited into plasmoid. Now, can be applicable to the plasma producing method of the second plasma generator 600 can include inductively coupled plasma In (Inductively Coupled Plasma, ICP) mode, helicon (helicon) mode and remote plasma mode Either type.For example, helicon mode can be applicable to the second plasma generator 600.
Second plasma generator 600 can include：Antenna 610, to be respectively coated by multiple second gas supply pipes 320 Mode is formed；Magnetic field produces and uses coil 620, possesses around multiple second gas supply pipes 320 are respective；And second source production Raw device 630, is connected to antenna 610.
Antenna 610 can receive the second high frequency electric source from second source generator 630 and will be supplied by second gas The process gas of pipe 320 is excited into plasmoid.Therefore, the second plasma generator 600 will can pass through second The gas of gas supply pipe 320, such as the second process gas are excited into plasmoid, are excited into the gas of plasmoid Body is available for being given to the second area S2 of dispenser 400.
Magnetic field generation coil 620 can form magnetic field, be produced with will pass through plasma in second gas supply pipe 320 The free radical of inside successfully reach substrate 10.Now, the magnetic field of the inner side of second gas supply pipe 320, which produces, uses coil 620 Can form the magnetic field towards substrate 10, the magnetic field generation in the outside of second gas supply pipe 320 with coil 620 to towards substrate 10 Direction in opposite direction form magnetic field.By the mode, the spy that magnetic field can be sealed near second gas supply pipe 320 Determine space.This prevents substrate 10 to be damaged because of magnetic field.
Using the substrate board treatment formed in this way, when being formed and etching the second film substrate can be prevented because of plasma Body and be damaged.Specifically, produce plasma in the inside of dispenser 400 and the inside of supply unit 300 and be supplied to substrate 10, so plasma will not be produced near substrate 10 and the damage of the substrate 10 caused by producing plasma can be prevented.
Also, using the substrate board treatment formed in this way, it can successfully implement the one side and cylinder in the first film The inside face in hole forms the process of the second film, can successfully implement to forming the part in the second film of the inlet portion of casing bore The process being etched.Specifically, can contain not in the independently inside formation of the inside of dispenser 400 and supply unit 300 The plasma of congruent gas and be together supplied to substrate 10, thus the film of desired composition can be successfully deposited To the one side of substrate 10, successfully the various films formed in substrate 10 can be etched.
Also, when carrying out processing procedure using the substrate board treatment formed in this way, it can make between substrate and shower head Gap turn narrow, can be suitable using ald processing procedure under low pressure so as to reduce process gas, such as gas source consumption Implement processing procedure sharply.
On the other hand, the processing substrate of the substrate processing method using same of application embodiments of the invention is filled as the above Put and be illustrated, but the substrate board treatment of the substrate processing method using same of application embodiments of the invention is not particularly limited to The composition and mode of embodiment are stated, various changes can be achieved.That is, when being illustrated to embodiments of the invention, application substrate The substrate board treatment of processing method is not limited to specific composition and mode, can meet possess multiplet shower head and In the category for the plasma that multiple gases and multiple gases can be provided substrate realize various compositions and mode.
It should be appreciated that the embodiment of the present invention is to illustrate embodiments of the invention, and it is not used to the limitation present invention. And, it should be noted that composition and mode proposed in the embodiment of the invention be bonded to each other or alternate application and be deformed into each These variations are considered as scope of the invention by the different form of kind.As a result, the present invention is equal in claims and with it Realized in the range of technological thought in the form of a variety of, the technical staff in technical field belonging to the present invention should be appreciated that Various embodiments can be realized in the range of the technological thought of the present invention.

Claims (16)

  1. A kind of 1. substrate processing method using same, it is characterised in that including：
    Prepare in substrate of the one side formed with the first film and casing bore；
    The substrate is placed in the chamber interior for possessing the multiple shower heads for supplying multiple gases with plasmoid respectively；
    Using the multiple shower head the second film is formed in the one side of first film and the inside face of the casing bore；And
    To being etched using the formation of the multiple shower head in a part for second film of the inlet portion of the casing bore.
  2. 2. substrate processing method using same according to claim 1, it is characterised in that lost in the part to second film After quarter, following process is included：
    The process that the process to form second film and the part to second film are etched sequentially is repeated a number of times, It is controlled with the thickness to second film.
  3. 3. substrate processing method using same according to claim 1 or 2, it is characterised in that：
    First film is included containing at least one of carbon film, silicon-containing film and graphene film film, the inside bread of the casing bore Containing containing any of carbon film, silicon-containing film and graphene film film.
  4. 4. substrate processing method using same according to claim 1 or 2, it is characterised in that：
    Second film includes dielectric film, and the part formed in second film of the inlet portion of the casing bore includes described The protrusion of second film.
  5. 5. substrate processing method using same according to claim 1 or 2, it is characterised in that form second film and include following mistake Journey：
    The temperature of the substrate is controlled；
    The internal pressure of chamber to being mounted with the substrate is controlled；And
    The substrate will be supplied to form the respective plasma of the multiple gas of second film.
  6. 6. substrate processing method using same according to claim 5, it is characterised in that：
    By formed the multiple shower head multiple spray-holes by the respective plasma of the multiple gas simultaneously or The substrate is sequentially supplied to,
    The multiple respective plasma of gas is produced in the outside of the chamber or the inside of the multiple shower head.
  7. 7. substrate processing method using same according to claim 6, it is characterised in that：
    The area of the export department of the multiple spray-hole is less than the area of the inlet portion of the multiple spray-hole.
  8. 8. substrate processing method using same according to claim 1 or 2, it is characterised in that carried out to a part for second film Etching includes following process：
    The temperature of the substrate is controlled；
    The internal pressure of chamber to being mounted with the substrate is controlled；And
    The substrate will be supplied to etch the respective plasma of the multiple gas of second film.
  9. 9. substrate processing method using same according to claim 8, it is characterised in that：
    By formed the multiple shower head multiple spray-holes by the respective plasma of the multiple gas simultaneously or The substrate is sequentially supplied to,
    The multiple respective plasma of gas is produced in the outside of the chamber or the inside of the multiple shower head.
  10. 10. substrate processing method using same according to claim 9, it is characterised in that：
    The area of the export department of the multiple spray-hole is less than the area of the inlet portion of the multiple spray-hole.
  11. 11. substrate processing method using same according to claim 1, it is characterised in that：
    The multiple gas is supplied to plasmoid by being formed in multiple spray-holes of the multiple shower head On the substrate,
    When the width of the export department of the multiple spray-hole is set into 1, the width of the inlet portion of the multiple spray-hole is 1.1 To 3.
  12. 12. substrate processing method using same according to claim 1, it is characterised in that：
    The multiple gas is supplied to plasmoid by being formed in multiple spray-holes of the multiple shower head On the substrate,
    The inner peripheral surface of the multiple spray-hole is formed as taper or Wen's shape.
  13. 13. substrate processing method using same according to claim 12, it is characterised in that：
    When the inner peripheral surface of the multiple spray-hole is formed as taper,
    The inner peripheral surface of the multiple spray-hole includes the multiple inclined planes for arranging and being connected to each other along the vertical direction,
    The gradient of at least any inclined plane in the multiple inclined plane is different from the gradient of at least another inclined plane.
  14. 14. substrate processing method using same according to claim 13, it is characterised in that：
    In the multiple inclined plane, inclining for the inclined plane positioned at opposite lower is more than positioned at the gradient of the inclined plane of opposite upper Gradient, or positioned at opposite upper inclined plane gradient be less than positioned at opposite lower inclined plane gradient.
  15. 15. substrate processing method using same according to claim 12, it is characterised in that：
    When the inner peripheral surface of the multiple spray-hole is formed as Wen's shape,
    The nozzle throat of the multiple spray-hole forms the export department in the multiple spray-hole, or the spray of the multiple spray-hole Mouth throat separates from the export department of the multiple spray-hole and formed to upside.
  16. 16. substrate processing method using same according to claim 15, it is characterised in that：
    When the inner peripheral surface of the multiple spray-hole is formed as Wen's shape,
    The inner peripheral surface of the multiple spray-hole increases from upside towards gradient during downside, or the inner peripheral surface of the multiple spray-hole Reduce from upside towards gradient during downside.
CN201610467283.XA 2016-05-26 2016-06-24 Substrate processing method using same Pending CN107437503A (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR1020160064730A KR101878665B1 (en) 2016-05-26 2016-05-26 Substrate processing method
KR1020160064732A KR20170133671A (en) 2016-05-26 2016-05-26 Substrate processing method
KR10-2016-0064730 2016-05-26
KR10-2016-0064732 2016-05-26

Publications (1)

Publication Number Publication Date
CN107437503A true CN107437503A (en) 2017-12-05

Family

ID=60458247

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201610467283.XA Pending CN107437503A (en) 2016-05-26 2016-06-24 Substrate processing method using same

Country Status (1)

Country Link
CN (1) CN107437503A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110634768A (en) * 2018-06-22 2019-12-31 三星显示有限公司 Thin film processing apparatus, showerhead thereof, and thin film processing method

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1568376A (en) * 2001-10-09 2005-01-19 应用材料有限公司 Method of depositing a material layer
CN101335192A (en) * 2007-06-27 2008-12-31 东京毅力科创株式会社 Substrate processing apparatus and shower head
CN101416293A (en) * 2006-03-31 2009-04-22 应用材料股份有限公司 Method to improve the step coverage and pattern loading for dielectric films
US20120009785A1 (en) * 2010-07-09 2012-01-12 Anand Chandrashekar Depositing Tungsten Into High Aspect Ratio Features
CN202423238U (en) * 2011-12-23 2012-09-05 中微半导体设备(上海)有限公司 Spraying head for improving processing uniformity of wafer

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1568376A (en) * 2001-10-09 2005-01-19 应用材料有限公司 Method of depositing a material layer
CN101416293A (en) * 2006-03-31 2009-04-22 应用材料股份有限公司 Method to improve the step coverage and pattern loading for dielectric films
CN101335192A (en) * 2007-06-27 2008-12-31 东京毅力科创株式会社 Substrate processing apparatus and shower head
US20120009785A1 (en) * 2010-07-09 2012-01-12 Anand Chandrashekar Depositing Tungsten Into High Aspect Ratio Features
CN202423238U (en) * 2011-12-23 2012-09-05 中微半导体设备(上海)有限公司 Spraying head for improving processing uniformity of wafer

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110634768A (en) * 2018-06-22 2019-12-31 三星显示有限公司 Thin film processing apparatus, showerhead thereof, and thin film processing method

Similar Documents

Publication Publication Date Title
CN108070846B (en) Gas supply unit and substrate processing apparatus including the same
CN107435139A (en) Gas distributor and substrate board treatment
US6851384B2 (en) Remote plasma apparatus for processing substrate with two types of gases
TWI761337B (en) Substrate processing system
US20060096540A1 (en) Apparatus to manufacture semiconductor
EP1230665B1 (en) Plasma processing system with dynamic gas distribution control
TWM560124U (en) Chamber with flow-through source
US20060196420A1 (en) High density plasma chemical vapor deposition apparatus
TW201824334A (en) Oxygen compatible plasma source
JP2020529736A (en) Selective deposition of SiN on a horizontal surface
CN101523573A (en) Plasma filming apparatus, and plasma filming method
US6887341B2 (en) Plasma processing apparatus for spatial control of dissociation and ionization
TW201626483A (en) Systems and methods for suppressing parasitic plasma and reducing within-wafer non-uniformity
TWI721227B (en) Film forming device and film forming method
TW201443273A (en) Method of making a gas distribution member for a plasma processing chamber
TW201705277A (en) Apparatus, system and method of treating substrate
US11289308B2 (en) Apparatus and method for processing substrate and method of manufacturing semiconductor device using the method
KR20160108176A (en) Method and apparatus to minimize seam effect during teos oxide film deposition
JP2014003085A (en) Plasma etching method and plasma treatment device
CN107437503A (en) Substrate processing method using same
TW202104643A (en) High etch selectivity, low stress ashable carbon hard mask
TWI633600B (en) Method for manufacturing semiconductor device
WO2020022045A1 (en) Etching method and etching device
US20040261714A1 (en) Plasma processing apparatus
KR101878665B1 (en) Substrate processing method

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
RJ01 Rejection of invention patent application after publication
RJ01 Rejection of invention patent application after publication

Application publication date: 20171205