CN107436464A - Light-receiving chip - Google Patents

Light-receiving chip Download PDF

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Publication number
CN107436464A
CN107436464A CN201610355136.3A CN201610355136A CN107436464A CN 107436464 A CN107436464 A CN 107436464A CN 201610355136 A CN201610355136 A CN 201610355136A CN 107436464 A CN107436464 A CN 107436464A
Authority
CN
China
Prior art keywords
light
receiving chip
differential amplifier
coupled
output
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201610355136.3A
Other languages
Chinese (zh)
Inventor
陈冠名
甘孟平
王智扬
王冠勋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rafael microelectronics Inc
Original Assignee
Rafael microelectronics Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rafael microelectronics Inc filed Critical Rafael microelectronics Inc
Priority to CN201610355136.3A priority Critical patent/CN107436464A/en
Publication of CN107436464A publication Critical patent/CN107436464A/en
Pending legal-status Critical Current

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Classifications

    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24Coupling light guides
    • G02B6/42Coupling light guides with opto-electronic elements
    • G02B6/4201Packages, e.g. shape, construction, internal or external details
    • G02B6/4274Electrical aspects
    • G02B6/4278Electrical aspects related to pluggable or demountable opto-electronic or electronic elements
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24Coupling light guides
    • G02B6/42Coupling light guides with opto-electronic elements
    • G02B6/4201Packages, e.g. shape, construction, internal or external details
    • G02B6/4274Electrical aspects
    • G02B6/428Electrical aspects containing printed circuit boards [PCB]
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24Coupling light guides
    • G02B6/42Coupling light guides with opto-electronic elements
    • G02B6/4201Packages, e.g. shape, construction, internal or external details
    • G02B6/4286Optical modules with optical power monitoring

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Amplifiers (AREA)

Abstract

The invention discloses a kind of light-receiving chip, and it includes an optical receiver, for receiving an optical signal;An and differential amplifier, with a first input end and one second input, the first input end is coupled to a positive terminal of the optical receiver, second input is coupled to a negative pole end of the optical receiver, and the wherein differential amplifier produces a differential output according to the voltage difference between the first input end and second input.

Description

Light-receiving chip
Technical field
The present invention relates to a kind of light-receiving chip, especially a kind of inside has the amplifier of optical receiver and differential output Light-receiving chip.
Background technology
Many countries global now are generally using the optical fiber delivery means main as network system.Because optical fiber be with The total reflection of light is transmitted, therefore optical fiber has high-speed transfer and the characteristic of low transmission loss.When optical fiber is used to make For network system transmission medium when, optical fiber has the characteristic of broadband, high power capacity and high speed.Therefore, fiber optic communications network turns into Develop the trend of broadband connections.Such as the development of fiber-to-the-home or optical fiber to the fiber to the xs such as building is fiber optic communications network hair The target of exhibition, progressively to substitute original copper transmission.
In the case of in current transinformation, increasing and user is more quick to network requirement, the transmission number of optical fiber Do not apply gradually and use according to amount.Used to solve the problems, such as that transmitted data amount is not applied, in addition to improving optical fiber transmission speed, The reception at optical fiber both ends also seems quite important with transmission.The existing Optical Receivers located at optical fiber receiving terminal, although can be with The transmitted data amount received is improved, but such a Optical Receivers has larger volume.
The content of the invention
It is a primary object of the present invention to provide a kind of light-receiving optical chip, wherein the present invention is poor by an optical receiver and one Dynamic amplifier is integrated on a chip, using this circuit of modularized design, and then reduces circuit design difficulty and cost.
In order to achieve the above object, the present invention provides a kind of light-receiving chip, and it includes an optical receiver, for receiving one Optical signal;And a differential amplifier, there is a first input end and one second input, the first input end to be coupled to the light One positive terminal of receiver, second input are coupled to a negative pole end of the optical receiver, and wherein the differential amplifier is according to this Voltage difference between first input end and second input produces a differential output.
In one embodiment of this invention, the optical receiver includes a diode.
In one embodiment of this invention, the differential amplifier includes one turn of impedance amplifier.
In one embodiment of this invention, the light-receiving chip device is in a tubular package module, the tubular Encapsulation Moulds Block includes a hollow cylinder to accommodate the light-receiving chip, and an optical signal passes through the opening transmitting positioned at the hollow cylinder one end To the optical receiver of the light-receiving chip.
In one embodiment of this invention, the light-receiving chip is arranged on a circuit board, is connect the light in a manner of routing On the electrical connection pad that one electrical connection pad of receipts chip is electrically connected on the circuit board, the electrical connection pad is coupled to the differential amplification The differential output end of device.
In one embodiment of this invention, the differential output includes one first output and one second output, first output Phase with this second output phase differ 180 degree.
In one embodiment of this invention, the differential amplifier includes a resistance, and the resistance is coupled to the differential amplifier A power voltage terminal.
In one embodiment of this invention, the differential amplifier includes a first switch component, wherein first switch component It is coupled between one first output of the differential output and an earth terminal of the differential amplifier.
In one embodiment of this invention, the differential amplifier also includes an inductance unit, and the inductance unit is coupled in this Between first switch component and the earth terminal.
In one embodiment of this invention, the light-receiving chip also includes an automatic gain control circuit, the automatic gain Control circuit is coupled to the differential amplifier, and an input of the wherein automatic gain control circuit couples the one of the differential output First output, an output end of the automatic gain control circuit are coupled to a gate of the first switch component, the automatic gain Control circuit adjusts the voltage of the output end according to the input.
Brief description of the drawings
Fig. 1 a are the schematic perspective view of tubular package module of the present invention;
Fig. 1 b are the perspective exploded view of tubular package module of the present invention;
Fig. 2 is the circuit structure diagram of light-receiving chip provided by the invention;
Fig. 3 is the circuit diagram of the differential amplifier in the present invention.
Description of reference numerals:10- bases;20- tubulars cover;30- light-receiving chips;40- circuit substrates;At the top of 102-; 104- bottoms;12a- electric connection pads;16- insulating barriers;202- perforates;50- optical receivers;60- differential amplifiers;80- is automatic Gain control circuit;60a- first input ends;The inputs of 60b- second;The output ends of 60c- first;The output ends of 60d- second;60e- 3rd input;The output ends of 30a- first;The output ends of 30b- second;80a- inputs;80b- inputs;80c- output ends;70- Passive component;606a- capacitor cells;606b- capacitor cells;618a- first switch components;618b- second switch components; 610a- inductance units;610b- inductance units;616a- resistance units;616b- resistance units.
Embodiment
Schema discloses the illustrative embodiment of the present invention.It is not set out all embodiments.It can additionally or alternatively be used Its embodiment.To save space or more effectively illustrating, apparent or unnecessary details can be omitted.On the contrary, one can be implemented A little embodiments are without disclosing all details.When same numbers or label occur in different drawings, it refers to same or like group Part or step.When following description is read together with alterations, the aspect of the present invention can be more fully understood by, it is such to enclose The property of schema should be regarded as illustrative and not restrictive.
As shown in Fig. 1 a and Fig. 1 b, Optical Receivers provided by the invention includes a base 10, one for tubular encapsulation Shape covers 20, one light-receiving chip 30 and a circuit substrate 40, wherein light-receiving chip 30 are arranged on the surface of circuit substrate 40, electricity Base board 40 is arranged on the upper surface of base 10, and tubular capping 20 is arranged on the upper surface of base 10 and by light-receiving chip 30 Covering, base 10 include integrally formed one top 102 and a bottom 104, and the ring of bottom 104 is located at the periphery at top 102, base 10 material includes metal material, polymerizable material or ceramic material, and multiple pins 12 run through the upper and lower surface of base 10 in addition, One end projection of each pin 12 is used, and base 10 connects with each as electric connection pad 12a in the upper surface at top 102 An insulating barrier 16 is equipped between pin 12, to isolated base 10 and each pin 12 electric conductivity and fixed pin 12 in base On 10, this insulating barrier 16 includes glazing compound (glass sealant), rubber or siliceous fluid sealant, the material of pin 12 Alloy or its combination including the materials such as copper, gold, MTR, aluminium, silver and nickel or above-mentioned material.Tubular capping 20 is a hollow cylinder, The top of this tubular capping 20 includes a perforation 202, and this perforation 202 is available for light of the optical signal launch to the surface of base 10 to connect Receive chip 30, a lens be optionally wherein set in this perforation 202, e.g. one have the optical lens focused on, glass, Any lens are not provided with ball-type lens or circular arc type lens, or perforation 202;This tubular capping 20 and the material of bottom 104 Including metal material, polymerizable material or ceramic material, wherein metal material include MTR cobalt-nickel alloys, copper, gold, MTR, aluminium, silver, Nickel or the alloy of above-mentioned material or its combination.In addition in the settable anti-interference layer of interior surface of tubular capping 20, such as Interior surface formed one layer or more can absorb specific wavelength absorbed layer (such as infrared ray), its material include nickel dam, aluminium lamination or Polymeric layer.
In addition, a metallic pad (meatal pad) for light-receiving chip 30 is passed through using routing mode (Wire bonding) It is electrically connected to by a plain conductor in a metallic pad of circuit substrate 40, the material of this plain conductor includes gold, copper or silver One of them, the metallic pad of circuit substrate 40 is equally also electrical via plain conductor using routing mode (Wire bonding) It is connected on the electric connection pad 12a of bottom 104.In addition, the metallic pad of light-receiving chip 30 can also flip (Flip Chip) mode is electrically connected in the metallic pad of circuit substrate 40, wherein flip mode on light-receiving chip 30 with sputter And/or plating mode forms a UBM (Under Ball Metallurgy) metal level, and to electroplate or the side of printing on UBM layer Formula forms a soldering-tin layer, then is electrically connected in a manner of flip (Flip Chip) in the metallic pad of circuit substrate 40.In addition, The metallic pad of above-mentioned light-receiving chip 30 can be used as a supply voltage (Vdd) end, an earth terminal (Vss), a signal output part And one signal input part use.In addition, circuit substrate 40 is, for example, a ceramic substrate or a printed circuit board (PCB), wherein ceramic substrate Including one of aluminum oxide (Al2O3) substrate, aluminium nitride (AlN) substrate or beryllium oxide (BeO) substrate.In addition, light-receiving core The species of piece 322 includes receiving luminous diode chip (optical Photodiode), high-frequency diode chip (Positive- Intrinsic-Negative Photodiode) and avalanche photodide chip (Avalanche Photodiode, APD), Photosensitive coupling (Charge-Coupled Device, CCD) chip or Complimentary Metal-Oxide semiconductor (Complementary One of Metal-Oxide Semiconductor, CMOS) chip.In addition, one or more passive components are settable electric herein On base board 40 or it is arranged on the surface of bottom 104 and is electrically connected in the metallic pad of circuit substrate 40, this passive component An e.g. resistor assembly, a variable resistor assembly, a thermistor component, a capacitance component or an Inductive component or and its group Close.
As shown in Fig. 2 the circuit of light-receiving chip 30 provided by the invention is for example put including an optical receiver 50, one is differential Big device 60 and one automatic growth control (automatic gain control, AGC) circuit 80, wherein this light-receiving chip 30 wrap One of a silicon semiconductor chip or a silicon germanium semiconductor (SiGe semiconductor) chip are included, in addition optical receiver 50 E.g. one receipts optical diode, high-frequency diode, avalanche photodide, photosensitive coupling unit or Complimentary Metal-Oxide are partly led One of body unit, the preferred embodiment of light-receiving chip 30 provided by the invention are a receipts optical diode.Differential amplifier 60 E.g. one turn of impedance amplifier (transimpedence amplifier, TIA) or limiting amplifier (limiting Amplifier), the preferred embodiment of differential amplifier 60 in the present invention is one turn of impedance amplifier, the optical receiver 50 one just An extreme and negative pole end is respectively coupled to an earth terminal (Vss) and a power voltage terminal (Vdd), and the one the of the differential amplifier 60 One input 60a and one second input 60b is respectively coupled to the positive terminal and negative pole end of the optical receiver 50.Work as optical receiver When 50 (e.g. receiving optical diode) receive an optical signal, the exhaustion region in chip can produce electronics electricity hole pair, its reverse bias Electric field each past N, P Ghandler motion of electronics electricity hole can be driven to move, so just produce a current signal, the differential amplifier 60 is by light-receiving Current signal caused by device 50 is converted into a voltage difference, and the differential amplifier 60 produces a differential output according to this voltage difference Signal, export to one first output end (outp) 30a of light-receiving chip 30 and one second output end (outn) 30b, wherein should First output end 30a receives the phase for the signal for coming from differential amplifier 60 and the second output end 30b receives reception and come from The phase difference 180 degree of the signal of differential amplifier 60.In addition, automatic growth control (automatic gain control, AGC) an input 80a and input 80b for circuit 80 is respectively coupled to the first output end 60c and of the differential amplifier 60 Two output end 60d, and an output end 80c of automatic gain control circuit 80 is coupled to the 3rd input of the differential amplifier 60 60e, this automatic gain control circuit 80 is making the Gain Automatic with automatic gain control circuit 80 of differential amplifier 60 Input signal strength and adjust automatically.In addition, the earth terminal (Vss) and power voltage terminal (Vdd) of this optical receiver 50 respectively can A passive component 70, e.g. a capacitance component or an Inductive component are coupled, this passive component 70 is considered as a low pass filter, uses To eliminate high-frequency noise.
As shown in figure 3, the circuit diagram model that Fig. 3 is differential amplifier 60 arranges, one first input of this differential amplifier 60 End (Inp) 60a and one second input (Inn) 60b is respectively coupled to a capacitor cell 606a and capacitor cell 606b, the electric capacity list First 606a is coupled to an a first switch unit 618a and inductance unit 610a, and this first switch unit 618a is, for example, a N-type Metal-oxide half field effect transistor (NMOS) or a p-type metal-oxide half field effect transistor (PMOS), the present invention in first switch unit 618a is illustrated with N-type metal-oxide half field effect transistor (NMOS), therefore capacitor cell 606a is coupled to N-type MOSFET crystalline substance The source electrode (Source) and inductance unit 610a of body pipe (NMOS), inductance unit 610a other ends coupling earth terminal (Vss), the electricity Hold unit 606b and be coupled to an a second switch unit 618b and inductance unit 610b, wherein second switch unit 618b is with N-type Metal-oxide half field effect transistor (NMOS) illustrates, therefore capacitor cell 606b is coupled to N-type metal-oxide half field effect transistor (NMOS) source electrode (Source) and inductance unit 610b, inductance unit the 610b other end coupling earth terminal (Vss).This is differential to put One first output end (Outp) 60c of big device 60 is coupled to a first switch unit 618a and resistance unit 616a, and e.g. the The drain (Drain) and resistance unit 616a of one output end 60c coupling N-type metal-oxide half field effect transistors (NMOS), resistance unit 616a other ends coupling power voltage terminal (Vdd), that is, resistance unit 616a are coupled to power voltage terminal (Vdd) and first defeated Go out to hold between 60c.One second output end (Outn) 60d of differential amplifier 60 is coupled to the electricity of a second switch unit 618b and one Hinder unit 616b, the drain (Drain) and electricity of e.g. the first output end 60d coupling N-type metal-oxide half field effect transistors (NMOS) Hinder unit 616b, resistance unit 616b other ends coupling power voltage terminal (Vdd), that is, resistance unit 616b and be coupled to power supply Between voltage end (Vdd) and the second output end 60d, in this embodiment, capacitor cell 606a, 606b, inductance unit 610a, 610b and resistance unit 616a, 616b are a load, and wherein capacitor cell 606a, 606b and inductance unit 610a, 610b can It is considered as low pass filter, to be responsible for eliminating noise.In addition, first switch unit 618a and second switch unit 618b can also couplings Automatic gain control circuit 80 is connected to, that is, the gate (Gate) of N-type metal-oxide half field effect transistor is coupled to automatic gain One output end 80c of control circuit 80, input 80a, 80b of automatic gain control circuit be coupled to the first output end 60c with Second output end 60d, this automatic gain control circuit 80 adjust output end 80c's according to the input 80a, 80b signal Voltage.
The present invention integrates optical receiver 50 and differential amplifier 60 on a chip, except reducing production cost and diminution Outside volume, it on the other hand can make have relatively low impedance between optical receiver 50 and differential amplifier 60, and due to incite somebody to action the two Integrate on a chip, using this circuit of modularized design, and then reduce circuit design difficulty and cost.
Described above is by embodiment to illustrate the features of the present invention, and its purpose will appreciate that this hair making to be familiar with the operator Bright content is simultaneously implemented according to this, and non-limiting protection scope of the present invention, therefore, it is all other without departing from disclosed spirit The equivalent modification completed or modification, it should be included in this case claims.

Claims (10)

  1. A kind of 1. light-receiving chip, it is characterised in that including:
    One optical receiver, for receiving an optical signal;And
    One differential amplifier, there is a first input end and one second input, the first input end to be coupled to the optical receiver A positive terminal, second input is coupled to a negative pole end of the optical receiver, and wherein the differential amplifier is first defeated according to this The voltage difference entered between end and second input produces a differential output.
  2. 2. light-receiving chip according to claim 1, it is characterised in that the optical receiver includes a diode.
  3. 3. light-receiving chip according to claim 1, it is characterised in that the differential amplifier includes one turn of impedance amplifier.
  4. 4. light-receiving chip according to claim 1, it is characterised in that its device is in a tubular package module, the cylinder Shape package module includes a hollow cylinder to accommodate the light-receiving chip, and an optical signal passes through one positioned at the hollow cylinder one end Opening is launched to the optical receiver of the light-receiving chip.
  5. 5. light-receiving chip according to claim 1, it is characterised in that it is arranged on a circuit board, in a manner of routing On the electrical connection pad that the one of the light-receiving chip electrical connection pad is electrically connected on the circuit board, the electrical connection pad is coupled to this The differential output end of differential amplifier.
  6. 6. light-receiving chip according to claim 1, it is characterised in that the differential output includes one first output and one the Two outputs, the phase of first output differ 180 degree with the phase of second output.
  7. 7. light-receiving chip according to claim 1, it is characterised in that the differential amplifier includes a resistance, the resistance It is coupled to a power voltage terminal of the differential amplifier.
  8. 8. light-receiving chip according to claim 1, it is characterised in that the differential amplifier includes a first switch group Part, wherein first switch component are coupled between one first output of the differential output and an earth terminal of the differential amplifier.
  9. 9. light-receiving chip according to claim 11, it is characterised in that the differential amplifier also includes an inductance unit, The inductance unit is coupled between the first switch component and the earth terminal.
  10. 10. light-receiving chip according to claim 1, it is characterised in that, should be certainly also including an automatic gain control circuit Dynamic gain control circuit is coupled to the differential amplifier, and it is differential defeated that an input of the wherein automatic gain control circuit couples this One first output gone out, an output end of the automatic gain control circuit are coupled to a gate of the first switch component, should be certainly Dynamic gain control circuit adjusts the voltage of the output end according to the input.
CN201610355136.3A 2016-05-25 2016-05-25 Light-receiving chip Pending CN107436464A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201610355136.3A CN107436464A (en) 2016-05-25 2016-05-25 Light-receiving chip

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201610355136.3A CN107436464A (en) 2016-05-25 2016-05-25 Light-receiving chip

Publications (1)

Publication Number Publication Date
CN107436464A true CN107436464A (en) 2017-12-05

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CN201610355136.3A Pending CN107436464A (en) 2016-05-25 2016-05-25 Light-receiving chip

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101630044A (en) * 2008-07-17 2010-01-20 三菱电机株式会社 Optical receiver
CN102544030A (en) * 2010-12-15 2012-07-04 无锡凌瑞微电子有限公司 Bandwidth expansion technology for CMOS (complementary metal oxide semiconductor transistor) integrated optical receiver
CN202856739U (en) * 2012-10-25 2013-04-03 北京世维通科技发展有限公司 Photoelectric detector
CN103278891A (en) * 2013-05-17 2013-09-04 武汉电信器件有限公司 High-speed optical receiver module of integrated limiting amplifier and preparation method for high-speed optical receiver module
CN103391050A (en) * 2013-06-05 2013-11-13 泉芯电子技术(深圳)有限公司 CMOS (Complementary Metal Oxide Semiconductor) low noise amplifying device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101630044A (en) * 2008-07-17 2010-01-20 三菱电机株式会社 Optical receiver
CN102544030A (en) * 2010-12-15 2012-07-04 无锡凌瑞微电子有限公司 Bandwidth expansion technology for CMOS (complementary metal oxide semiconductor transistor) integrated optical receiver
CN202856739U (en) * 2012-10-25 2013-04-03 北京世维通科技发展有限公司 Photoelectric detector
CN103278891A (en) * 2013-05-17 2013-09-04 武汉电信器件有限公司 High-speed optical receiver module of integrated limiting amplifier and preparation method for high-speed optical receiver module
CN103391050A (en) * 2013-06-05 2013-11-13 泉芯电子技术(深圳)有限公司 CMOS (Complementary Metal Oxide Semiconductor) low noise amplifying device

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Application publication date: 20171205

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