CN107421654B - Ultra-high temperature passive film temperature sensor and manufacturing method thereof - Google Patents
Ultra-high temperature passive film temperature sensor and manufacturing method thereof Download PDFInfo
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- CN107421654B CN107421654B CN201710187106.0A CN201710187106A CN107421654B CN 107421654 B CN107421654 B CN 107421654B CN 201710187106 A CN201710187106 A CN 201710187106A CN 107421654 B CN107421654 B CN 107421654B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/36—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using magnetic elements, e.g. magnets, coils
Abstract
The invention belongs to the technical field of temperature sensors, and provides an ultra-high temperature passive film temperature sensor and a manufacturing method thereof, aiming at solving the technical problem that the conventional temperature sensor cannot accurately measure the temperature parameter under the ultra-high temperature environment. The sensor of the invention obtains signals in a wireless mode by utilizing LC resonance principle, and simultaneously prints platinum metal on a high-purity alumina ceramic substrate, thereby greatly expanding the test range of temperature at high temperature.
Description
Technical Field
The invention belongs to the technical field of temperature sensors, and particularly relates to an ultrahigh-temperature passive film temperature sensor and a manufacturing method thereof.
Background
At present, in a high-temperature environment, the temperature measurement methods at home and abroad mainly include a thermocouple method, an infrared temperature measurement sensor, an LC resonance type temperature sensor and the like. The thermocouple method is contact temperature measurement, a probe is arranged in a measured environment, the distance between the cold end and the hot end of the temperature sensor is long, the size is large, rare precious metals are adopted, the manufacturing cost is high, the service life is short, and the requirement of tightness measurement cannot be met. The traditional temperature sensor has the problems of high-temperature failure of a connecting lead wire and the like at higher temperature, so that the measurement at higher temperature cannot be carried out; although the infrared temperature sensor has the advantages of non-contact, high corresponding speed and accurate measurement, the infrared ray is easily interfered by environmental factors and cannot work under the conditions of dust, obstacles and the like; the LC resonance type temperature sensor does not need an external power supply, can remotely and remotely measure and read signals in a non-contact way, and has the advantages of high quality factor, low manufacturing cost and the like, but the quality factor Q of the LC resonance type temperature sensor is greatly influenced by the temperature, so that the signals are difficult to measure at higher temperature.
Disclosure of Invention
The invention provides an ultrahigh-temperature passive film temperature sensor and a manufacturing method thereof, aiming at solving the technical problem that the conventional temperature sensor cannot accurately measure temperature parameters in an ultrahigh-temperature environment.
The technical scheme adopted by the invention is as follows:
the ultra-high temperature passive film temperature sensor comprises a medium substrate and a planar spiral inductor, wherein the planar spiral inductor is positioned on one side of the medium substrate, a parasitic capacitor exists in the planar spiral inductor, and an LC resonance loop is formed by the planar spiral inductor and the parasitic capacitor.
The number of turns of the planar spiral inductor is 2-5 turns.
The line width of the planar spiral inductor is 1-3 mm.
The dielectric substrate is made of alumina ceramic, and the planar spiral inductor is made of platinum metal.
A manufacturing method of an ultrahigh-temperature passive film temperature sensor comprises the following specific manufacturing steps:
a. fabrication of dielectric substrates
1) Tape casting, namely adding an initiator and a catalyst into the high-temperature-resistant alumina ceramic slurry, uniformly stirring, injecting into a corresponding mold, and heating the slurry to form a solid-phase raw ceramic band;
2) slicing the raw porcelain strip;
3) laminating the cut green ceramic chips, and then carrying out static pressure for 5min at the temperature of 70 ℃ under the pressure of 21 MPa;
4) sintering the base material of the lamination at high temperature, wherein the sintering peak temperature is 1400-1550 ℃, and a compact ceramic structure is formed;
b. printing circuit patterns on dielectric substrates
(1) Firstly, manufacturing a screen printing plate with a planar spiral inductance pattern;
(2) placing the manufactured screen printing plate on a medium substrate, aligning the medium substrate with the circuit pattern on the screen printing plate, and fixing the screen printing plate to be in close contact with the medium substrate;
(3) adding platinum metal slurry at one end of the screen printing plate, and pushing the slurry to the other end of the screen printing plate by using a scraper;
(4) placing the medium substrate printed with the circuit pattern in a drying furnace for drying so as to discharge liquid phase components in the slurry;
(5) and sintering the dried medium substrate in a sintering furnace, and finishing the manufacture of the sensor.
A manufacturing method of an ultrahigh-temperature passive film temperature sensor is manufactured by adopting a 3D printing technology and comprises the following specific manufacturing steps:
a. firstly, establishing a digital model file of a 3D printing technology, and setting the size and the material of a sensor;
b. selecting ceramic powder and a liquid phase mixing agent, and printing a ceramic substrate according to a digital model file;
c. the sensor inductance is manufactured by adopting a selective laser sintering technology in 3D printing,
(1) firstly, printing a layer of nickel-chromium-titanium alloy powder on a substrate material;
(2) preheating alloy powder to a temperature slightly lower than the melting point of the alloy powder, and melting metal at the position of an inductor by using pulse laser;
(3) and removing the metal powder at other parts after the molten inductor is cooled.
The invention has the beneficial effects that:
1. the sensor of the invention obtains signals in a wireless mode by utilizing LC resonance principle, and simultaneously prints platinum metal on a high-purity alumina ceramic substrate, thereby greatly expanding the test range of temperature at high temperature and being capable of measuring the temperature value of 1500 ℃ at most.
2. The sensor does not need an external power supply, can remotely and remotely measure and read signals in a non-contact way, can meet the temperature measurement in high-temperature severe environment and closed environment, and has simple structure, easier preparation and low manufacturing cost compared with the traditional LC sensor.
3. The sensor is manufactured by a 3D printing manufacturing method, has the advantages of rapidness and accuracy, and greatly saves manufacturing materials of the sensor by feeding materials at fixed points during printing.
Drawings
FIG. 1 is a front view of the present invention;
FIG. 2 is a top view of the present invention;
FIG. 3 is a schematic view of the measurement principle of the sensor according to the present invention;
FIG. 4 is a schematic view of a main flow of screen printing;
FIG. 5 is a schematic view of an interrogation antenna configuration;
FIG. 6 is a temperature sensor testing system;
FIG. 7 is a graph of simulation results for a sensor;
FIG. 8 is a graph of the test results of the sensor;
FIG. 9 is a schematic view of a main process for manufacturing a sensor by laser printing;
in the figure: 1-medium substrate, 2-planar spiral inductor, 3-sensor, 4-interrogation antenna, 5-test system, 6-screen, 7-sparse hole, 8-scraper, 9-high temperature resistant wire, 10-SMA, 11-heater, 12-heat insulation material, 13-network analyzer, 14-machine tool, 15-film substrate, 16-guide sleeve, 17-driving roller, 18-driven roller, 19-spray head, 20-laser, 21-laser beam, 22-compression roller, 23-alloy powder, 24-melted alloy powder, a-computer modeling, b-3D printing ceramic film, c-selective laser sintering.
Detailed Description
As shown in fig. 1 and 2, the ultra-high temperature passive thin film temperature sensor includes a medium substrate 1 and a planar spiral inductor 2, wherein the medium substrate 1 is made of alumina ceramic, the planar spiral inductor 2 is made of platinum metal, the planar spiral inductor 2 is located on one side of the medium substrate 1, the planar spiral inductor 2 has parasitic capacitance, and the planar spiral inductor 2 and the parasitic capacitance form an LC resonant circuit.
According to relevant theories and experimental results, the Q value of the sensor is reduced under a high-temperature environment, and the signal intensity is reduced. The high temperature causes an increase in the parasitic capacitance and parasitic resistance of the sensor, with the main cause of signal degradation being the increase in parasitic resistance. Therefore, the structural size of the sensor is optimized, and the reduction of parasitic resistance is very important for obtaining signals under the high-temperature environment of the sensor. The parasitic resistance of the sensor is related to the wire length, the wire width and the wire thickness of the planar spiral inductor, and under the condition of limited manufacturing process, the wire thickness cannot be changed greatly, and only the wire width and the length parameters of the planar spiral inductor can be optimized. The total length of the inductor is not too long, so that the planar spiral inductor is arranged for 2-5 turns. The width of the conductive wire of the inductor should be widened as much as possible to reduce parasitic resistance, but too wide a conductive wire may cause waste of metal material and reduce effective wiring area. Finally, the width of the wire of the planar spiral inductor is set to be 1-3 mm.
A manufacturing method of an ultrahigh-temperature passive film temperature sensor comprises the following specific manufacturing steps:
a. fabrication of dielectric substrates
1) Tape casting, namely adding an initiator and a catalyst into the high-temperature-resistant alumina ceramic slurry, uniformly stirring, injecting into a corresponding mold, and heating the slurry to form a solid-phase raw ceramic band;
2) slicing the raw porcelain strip;
3) laminating the cut green ceramic chips, and then carrying out static pressure for 5min at the temperature of 70 ℃ under the pressure of 21 MPa;
4) sintering the base material of the lamination at high temperature, wherein the sintering peak temperature is 1400-1550 ℃, and a compact ceramic structure is formed;
b. a circuit pattern is printed on a dielectric substrate using a screen printing technique, as shown in figure 4,
(1) firstly, manufacturing a screen printing plate with a planar spiral inductance pattern;
(2) placing the manufactured screen printing plate on a medium substrate, aligning the medium substrate with the circuit pattern on the screen printing plate, and fixing the screen printing plate to be in close contact with the medium substrate;
(3) adding platinum metal slurry at one end of the screen printing plate, and pushing the slurry to the other end of the screen printing plate by using a scraper;
(4) placing the medium substrate printed with the circuit pattern in a drying furnace for drying so as to discharge liquid phase components in the slurry;
(5) and sintering the dried medium substrate in a sintering furnace, and finishing the manufacture of the sensor.
In recent years, 3D printing additive manufacturing technology plays an increasingly important role in various industries, and particularly in the manufacturing and processing industry, large components and small parts and sensing devices can be realized, and the manufacturing technology can realize rapid forming and is the leading-edge and potential manufacturing technology. The Selective Laser Melting (SLM) technology is an important part in the field of metal 3D printing additive manufacturing, and is a rapid forming technology with great development prospect. The selective laser melting 3D printing alloy material is used as an inductance coil, a ceramic-based wireless passive high-temperature device is designed, and temperature wireless in-situ measurement above 1400 ℃ can be realized.
A manufacturing method for manufacturing an ultra-high temperature passive thin film temperature sensor by adopting a 3D printing technology, as shown in fig. 9, comprises the following specific manufacturing steps:
a. firstly, establishing a digital model file of a 3D printing technology, and setting the size and the material of a sensor;
b. selecting ceramic powder and a liquid phase mixing agent, and printing a ceramic substrate according to a digital model file;
c. the sensor inductor is manufactured by adopting a Selective Laser Sintering (SLS) technology in 3D printing,
(1) firstly, a layer of nickel-chromium-titanium alloy powder is printed on a substrate material
(2) Preheating the alloy powder to a temperature slightly lower than the melting point of the alloy powder, melting the metal at the inductive position by using a pulse laser (heating to a sintering temperature),
(3) and removing the metal powder at other parts after the molten inductor is cooled.
Manufacturing an interrogation antenna:
the sensor principle of the present invention is based on the LC resonance principle, with the interrogation antenna being an inductive coil. In order to achieve a good coupling between the interrogation antenna and the sensor inductance, the interrogation antenna is of a size similar to the sensor. In order to simplify the fabrication of the interrogation antenna, the number of turns of the interrogation antenna is set to 1 turn, and the structure thereof is as shown in fig. 5. The interrogation antenna is connected with the transmission line of the network analyzer through the standard SMA, and compared with the traditional LC interrogation antenna, the interrogation antenna has the advantages of simple structure and easy manufacture. Meanwhile, parasitic resistance is reduced, and the measured sensor signal is relatively large.
The measurement principle of the invention is as follows: as shown in fig. 3, the test system sends a frequency sweep signal of a certain frequency to the interrogation antenna in a low temperature region, an alternating magnetic field is generated around the interrogation antenna, the sensor is electromagnetically coupled with the coil of the interrogation antenna, when the frequency of the alternating magnetic field reaches the resonant frequency f0 of the sensor, the sensor resonates, magnetic field energy generated by the interrogation antenna is absorbed by the sensor, other frequency signals are reflected back, frequency information of the sensor can be measured by analyzing S parameters of the interrogation antenna, and the temperature of the test environment can be reversely deduced.
The medium substrate of the sensor is made of high-temperature-resistant alumina ceramic, high-purity alumina can meet the working temperature of more than 1500 ℃, an inductance circuit is printed on the medium substrate by using a thick film circuit technology after the medium substrate is manufactured, platinum metal is used for manufacturing the circuit, and the platinum metal has ultrahigh melting point and oxidation resistance and can stably work in a high-temperature environment.
The ultra-high temperature sensor test shows that as shown in fig. 6, during testing, the sensor is placed in a test environment, an interrogation antenna and the sensor are oppositely placed, the middle of the sensor is separated by a heat insulation material, the distance between the sensor and the interrogation antenna is 2 ~ 3 cm, a network analyzer is used for analyzing the return loss at the end of the interrogation antenna to obtain the resonant frequency of the sensor, fig. 7 and 8 are respectively a simulation result and a test result graph of the sensor, ADS is selected by simulation software, and results show that the resonant frequency of the sensor is about 98MHz and the sensor has better signal strength.
The temperature test result of the sensor shows that the resonant frequency of the sensor is reduced along with the increase of the temperature, and the signal intensity of the sensor is also continuously reduced. After signal amplification, the sensor still has better signal strength at 1400 ℃.
Claims (2)
1. A manufacturing method of an ultrahigh-temperature passive film temperature sensor comprises a medium substrate (1) and a planar spiral inductor (2), wherein the medium substrate (1) is made of alumina ceramic, the planar spiral inductor (2) is made of platinum metal, the planar spiral inductor (2) is located on one side of the medium substrate (1), the planar spiral inductor (2) has a parasitic capacitor, and the planar spiral inductor (2) and the parasitic capacitor form an LC resonance loop,
the specific manufacturing steps are as follows:
a. fabrication of dielectric substrates
1) Tape casting, namely adding an initiator and a catalyst into the high-temperature-resistant alumina ceramic slurry, uniformly stirring, injecting into a corresponding mold, and heating the slurry to form a solid-phase raw ceramic band;
2) slicing the raw porcelain strip;
3) laminating the cut green ceramic chips, and then carrying out static pressure for 5min at the temperature of 70 ℃ under the pressure of 21 MPa;
4) sintering the base material of the lamination at high temperature, wherein the sintering peak temperature is 1400-1550 ℃, and a compact ceramic structure is formed;
b. printing circuit patterns on dielectric substrates
(1) Firstly, manufacturing a screen printing plate with a planar spiral inductance pattern;
(2) placing the manufactured screen printing plate on a medium substrate, aligning the medium substrate with the circuit pattern on the screen printing plate, and fixing the screen printing plate to be in close contact with the medium substrate;
(3) adding platinum metal slurry at one end of the screen printing plate, and pushing the slurry to the other end of the screen printing plate by using a scraper;
(4) placing the medium substrate printed with the circuit pattern in a drying furnace for drying so as to discharge liquid phase components in the slurry;
(5) and sintering the dried medium substrate in a sintering furnace, and finishing the manufacture of the sensor.
2. The utility model provides a manufacturing method of ultra-high temperature passive film temperature sensor, including medium basement (1) and plane spiral inductance (2), medium basement (1) adopts the alumina ceramics preparation, plane spiral inductance (2) adopt the platinum metal preparation, and plane spiral inductance (2) are located one side of medium basement (1), and plane spiral inductance (2) have parasitic capacitance, and plane spiral inductance (2) and parasitic capacitance form an LC resonance circuit, adopt 3D printing technique to make, and its concrete preparation step is:
a. firstly, establishing a digital model file of a 3D printing technology, and setting the size and the material of a sensor;
b. selecting ceramic powder and a liquid phase mixing agent, and printing a ceramic substrate according to a digital model file;
c. the sensor inductance is manufactured by adopting a selective laser sintering technology in 3D printing,
(1) firstly, printing a layer of nickel-chromium-titanium alloy powder on a substrate material;
(2) preheating the nickel-chromium-titanium alloy powder to a temperature slightly lower than the melting point of the nickel-chromium-titanium alloy powder, and melting the metal at the position of the inductor by using pulse laser;
(3) and removing the metal powder at other parts after the molten inductor is cooled.
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| CN108598687A (en) * | 2018-01-16 | 2018-09-28 | 中北大学 | Wireless high temperature sensor and preparation method thereof based on electromagnetism Meta Materials |
| CN108975920B (en) * | 2018-03-12 | 2021-05-18 | 中北大学 | HTCC-based high-temperature heat flow sensor and preparation method thereof |
| CN110108382A (en) * | 2019-04-26 | 2019-08-09 | 南京邮电大学 | Double-layer inductor formula passive wireless temperature sensor |
| CN111257378B (en) * | 2020-02-24 | 2023-03-24 | 东南大学 | Passive wireless sensor for detecting discrete liquid drops and bubbles |
| CN111879958B (en) * | 2020-07-15 | 2022-03-18 | 中北大学 | High-frequency-response passive LC (inductance-capacitance) rotating speed sensor and testing method thereof |
| CN114136613B (en) * | 2021-10-20 | 2023-06-09 | 中国航发四川燃气涡轮研究院 | Monitoring system and online monitoring method for working state of engine bearing |
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| CN102944325B (en) * | 2012-11-29 | 2014-03-12 | 东南大学 | Passive wireless temperature and humidity integrated sensor |
| CN105953934B (en) * | 2016-04-26 | 2018-03-13 | 东南大学 | A kind of LC formula passive wireless temperature sensors based on hot double-deck execution beam |
| CN105938021B (en) * | 2016-06-30 | 2018-02-23 | 东南大学 | A kind of multilayer inductor passive and wireless LC temperature sensors |
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