CN107418473B - A kind of water solubility bonding wafer agent - Google Patents
A kind of water solubility bonding wafer agent Download PDFInfo
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- CN107418473B CN107418473B CN201710439400.6A CN201710439400A CN107418473B CN 107418473 B CN107418473 B CN 107418473B CN 201710439400 A CN201710439400 A CN 201710439400A CN 107418473 B CN107418473 B CN 107418473B
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- pure water
- aluminium alum
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- water
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 title claims abstract description 41
- 239000003795 chemical substances by application Substances 0.000 title claims abstract description 10
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 claims abstract description 38
- 235000010489 acacia gum Nutrition 0.000 claims abstract description 24
- 229940037003 alum Drugs 0.000 claims abstract description 24
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 24
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 24
- 239000004411 aluminium Substances 0.000 claims abstract description 24
- 229920000084 Gum arabic Polymers 0.000 claims abstract description 14
- 241000978776 Senegalia senegal Species 0.000 claims abstract description 14
- 239000000205 acacia gum Substances 0.000 claims abstract description 14
- 239000000853 adhesive Substances 0.000 claims abstract description 12
- 230000001070 adhesive effect Effects 0.000 claims abstract description 12
- 239000001785 acacia senegal l. willd gum Substances 0.000 claims abstract description 10
- 238000003756 stirring Methods 0.000 claims abstract description 10
- 238000002360 preparation method Methods 0.000 claims abstract description 4
- 238000012545 processing Methods 0.000 claims description 22
- 239000007767 bonding agent Substances 0.000 claims description 11
- 238000005498 polishing Methods 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 7
- 239000012188 paraffin wax Substances 0.000 abstract description 17
- 238000005303 weighing Methods 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 20
- 238000000034 method Methods 0.000 description 11
- 235000011187 glycerol Nutrition 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- 238000010897 surface acoustic wave method Methods 0.000 description 7
- 238000004140 cleaning Methods 0.000 description 6
- 238000000227 grinding Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 4
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 3
- 239000012459 cleaning agent Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000007654 immersion Methods 0.000 description 3
- 239000010985 leather Substances 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000003754 machining Methods 0.000 description 3
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 210000003746 feather Anatomy 0.000 description 2
- 229920001206 natural gum Polymers 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 238000007711 solidification Methods 0.000 description 2
- 230000008023 solidification Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000002604 ultrasonography Methods 0.000 description 2
- QLOKJRIVRGCVIM-UHFFFAOYSA-N 1-[(4-methylsulfanylphenyl)methyl]piperazine Chemical compound C1=CC(SC)=CC=C1CN1CCNCC1 QLOKJRIVRGCVIM-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052916 barium silicate Inorganic materials 0.000 description 1
- HMOQPOVBDRFNIU-UHFFFAOYSA-N barium(2+);dioxido(oxo)silane Chemical compound [Ba+2].[O-][Si]([O-])=O HMOQPOVBDRFNIU-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 239000006071 cream Substances 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 230000018044 dehydration Effects 0.000 description 1
- 238000006297 dehydration reaction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- XMHIUKTWLZUKEX-UHFFFAOYSA-N hexacosanoic acid Chemical compound CCCCCCCCCCCCCCCCCCCCCCCCCC(O)=O XMHIUKTWLZUKEX-UHFFFAOYSA-N 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- -1 is made of Substances 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000002932 luster Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 238000005482 strain hardening Methods 0.000 description 1
- 239000012209 synthetic fiber Substances 0.000 description 1
- 229920002994 synthetic fiber Polymers 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J105/00—Adhesives based on polysaccharides or on their derivatives, not provided for in groups C09J101/00 or C09J103/00
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
- C09J11/02—Non-macromolecular additives
- C09J11/04—Non-macromolecular additives inorganic
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
- C09J11/02—Non-macromolecular additives
- C09J11/06—Non-macromolecular additives organic
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/08—Shaping or machining of piezoelectric or electrostrictive bodies
- H10N30/085—Shaping or machining of piezoelectric or electrostrictive bodies by machining
- H10N30/086—Shaping or machining of piezoelectric or electrostrictive bodies by machining by polishing or grinding
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/30—Sulfur-, selenium- or tellurium-containing compounds
- C08K2003/3045—Sulfates
- C08K2003/3081—Aluminum sulfate
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/04—Oxygen-containing compounds
- C08K5/05—Alcohols; Metal alcoholates
- C08K5/053—Polyhydroxylic alcohols
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The invention discloses a kind of water-soluble bonding wafer agent, are made of four kinds of components of following mass parts, gum arabic 100；Pure water 160-185；Aluminium alum 15-30；Glycerol 15-25.The preparation method comprises the following steps: a) weighing and the comparable pure water of gum arabic quality and being heated to 60 DEG C or more, the gum arabic that powdery is then added is mixed, and stirs evenly to form gel Arabic gum；B) aluminium alum and remaining pure water are mixed to be configured to aluminium alum solution；C) aluminium alum solution is uniformly mixed with gel Arabic gum；D) finally glycerol is poured into the mixed liquor that step c) obtains, stirs evenly and obtains water soluble adhesive.Water soluble adhesive of the present invention can replace paraffin used at present, can be bonded and solidify at normal temperature, and stress is small, clean simple and environmentally-friendly, at low cost.
Description
Technical field
The present invention relates to bonding agents, and in particular to the water solubility for preparing SAW device single-sided polishing substrate slice is brilliant
Piece bonding agent belongs to crystalline material manufacture field.
Background technique
Surface acoustic wave (SAW) filter is selective, minimum with interior distortion, group delay with flexible design, splendid passband
Time deviation is small and the frequency plot linearity is excellent, input and output impedance transformation is easy, electromagnetism interference performance is good, reliability
The features such as high, real time signal processing ability and Miniaturizable and chip type manufacture, becomes the core devices of mobile communication.Quartz
(SiO2), lithium niobate (LT), lithium tantalate (LT), barium silicate (LGS), the piezoelectric monocrystals such as tantalic acid gallium lanthanum (LGT), need to be processed into
Substrate slice of the single-sided polishing piece as production SAW device, substrate slice require at low cost, face type quality (indexs such as angularity, TTV)
Good, surface mass remains few etc..Wafer flatness error directly affects the focusing of lithography system, roughness influence groove size with
Precision, defects count and depth will affect the integrated level and reliability of element.It is increasingly tight in particular with hyundai electronics component
The requirement of lattice, requirement of the SAW device producer to the precision and surface quality of Piezoelectric Substrates piece are higher and higher.Therefore it is low at
Originally, the ultraprecise Wafer Machining research of industrialization is extremely urgent.
When existing chip is processed, the non-processing face of two wafers is bonded together by paraffin first, is then placed within processing
Carry out polishing processing in equipment, when processing first processes the machined surface of one of chip, then reprocesses the processing of another chip
Face.There are following apparent defects for this binding material of paraffin:
1, paraffin needs after heating and melting and bonding wafer, and two plates are also required to heating paraffin wax when separating, because of thermal expansion coefficient
Difference, will cause after chip is taken off from fixture and deform, cause the angularity of chip larger, if 4 inch wafers do not use
Chemical corrosion method control, numerical value can exceed 100 μm.
2, since the paraffin thickness deviation of bonding is at 10 μm or so, the essence of existing bonding error and fixture and processing disk
Degree problem will cause chip turned-down edge, and product TTV index is at 20 μm or so.Using overseas equipment and fixture and auxiliary material, TTV index
It can reach within 10 μm, but equipment, auxiliary material are expensive, higher cost.
3, it needs to clean paraffin after the chip separation being bonded by paraffin, and the cleaning higher cost of paraffin, clearly
Paraffin is washed usually there are two types of cleaning agent, and gasoline cleaning paraffin will cause lead residual, and sulfuric acid aggravates potassium chromate and also seriously pollutes environment.
If removing cerate using dedicated, production cost can increase again；Paraffin is remained simultaneously also easily to pollute filming equipment cavity.
Summary of the invention
In view of the above shortcomings of the prior art, the object of the present invention is to provide a kind of water soluble adhesive, Neng Goudai
For paraffin used at present, it can be bonded and solidify at normal temperature, stress is small, cleans simple and environmentally-friendly, at low cost.
To achieve the goals above, The technical solution adopted by the invention is as follows:
A kind of water solubility bonding wafer agent, is made of, gum arabic 100 four kinds of components of following mass parts；Pure water
160-185；Aluminium alum 15-30；Glycerol 15-25.
Preferred mass part is gum arabic 100；Pure water 175-184；Aluminium alum 16-25；Glycerol 18-22.
Above-mentioned bonding agent is prepared as follows to obtain:
A) it weighs and the comparable pure water of gum arabic quality and is heated to 60 DEG C or more, the Arab of powdery is then added
Natural gum is mixed, and stirs evenly to form gel Arabic gum；
B) aluminium alum and remaining pure water are mixed to be configured to aluminium alum solution；
C) aluminium alum solution is uniformly mixed with gel Arabic gum；
D) finally glycerol is poured into the mixed liquor that step c) obtains, stirs evenly and obtains water soluble adhesive.
Compared to existing bonding agent paraffin, the invention has the following beneficial effects:
1, water soluble adhesive proposed by the present invention realizes no waxy luster cold working, can complete crystalline substance at normal temperature
The bonding and solidification of piece, curing mechanism are dehydration solidification.And aluminium alum solution ratio can be adjusted according to processing request, it is formed different
Bonding force.Due to avoiding influence of the heat bonding to product angularity, TTV, LTV well without heating, improves chip and add
Working medium amount.
2, the chip of this bonding agent bonding can be completely separable using pure water immersion, then more immersion some times are with regard to achievable
The cleaning of chip will not form any residual in wafer surface.As not needing those cleaning agents required for cleaning paraffin,
Reducing wafer manufacture cost and two aspect of environmental protection is all improved.
3, water soluble adhesive of the present invention is bonded by hand, simple and convenient, it is no longer necessary to die Bonder.
Specific embodiment
Below in conjunction with specific embodiment, the present invention will be described in detail.
Water solubility bonding wafer agent of the invention, is made of, gum arabic 100 four kinds of components of following mass parts；Pure water
160-185；Aluminium alum 15-30；Glycerol 15-25.
Preferred mass part: gum arabic 100；Pure water 175-184；Aluminium alum 16-25；Glycerol 18-22.
This bonding agent can be realized room temperature bonding, the effect of pure water separation cleaning, while by adjusting aluminium alum solution ratio
Adjust the bonding force and mobility of bonding agent with can be convenient.
Bonding agent of the present invention is prepared as follows to obtain:
A) it weighs and the comparable pure water of gum arabic quality and is heated to 60 DEG C or more, the Arab of powdery is then added
Natural gum is mixed, and stirs evenly to form gel Arabic gum；
B) aluminium alum and remaining pure water are mixed to be configured to aluminium alum solution；
C) aluminium alum solution is uniformly mixed with gel Arabic gum；
D) finally glycerol is poured into the mixed liquor that step c) obtains, stirs evenly and obtains water soluble adhesive.
The following are a preferred preparation embodiments.
Pure water 100g is weighed, is heated to 60 DEG C or more, is mixed with 100g powdery gum arabic, stirs evenly to form gel
Shape Arabic gum.
According to pure water, aluminium alum weight ratio (2-6): 1 proportional arrangement is at 90-100g aluminium alum solution.
Aluminium alum solution is uniformly mixed with Arabic gum.
It measures 15-25mL glycerol to pour into mixed liquor, stirs evenly and obtain water soluble adhesive.
When processing SAW device single-sided polishing substrate slice, the non-processing face to two pieces of chips is needed to glue
It connects, bonding agent of the present invention is the non-processing face bonding for being used for two pieces of chips.To more fully understand this bonding agent in process
Use and effect, SAW device is described in detail with the preparation method of single-sided polishing substrate slice below.
1) boule wafer is corroded: boule wafer being put into and is mixed in a certain ratio HNO3In HF corrosive liquid, blank is eliminated
Stress in piece, while the sliver rate of following process can be reduced；
2) chip feather plucking: use GC1000# green silicon carbide by chip two sides feather plucking, stock removal 0.03mm/ piece, pressure (1-
1.5) Kg/ piece, time 10-20min；
3) etching: product machining stress is eliminated using corrosive liquid；
4) wafer bonding: using water soluble adhesive of the present invention, and the non-processing face bonding of chip is protected；
5) burnishing surface fine grinding, fine grinding: the two plates after bonding are fitted into planetary gear, use polyurethane polished leather for mill
Disk, white fused alumina are abrasive material, while carrying out fine grinding and fine grinding to two plates buffed surface, and 30-40 μm of total stock removal, surface is under strong light
Visually observe no road plan, product roughness≤50nm；
6) chip separates and corrodes: directly separating chip using pure water immersion, places into corrosive liquid；
7) chamfering: carborundum electroplating grinding wheel chamfering is used；
8) wafer bonding: using water soluble adhesive of the present invention, and chip non-polished surface bonding is protected；
9) burnishing surface rough polishing: two plates are mechanically polished simultaneously using W1 diamond cream, polished leather uses synthetic fibers
Polished leather, polished amount 0.01mm/ piece, pressure (3-4) Kg/ piece, time 200-300min, product is seen under strong light after the completion of polishing
Examine no marking, roughness < 2nm；
10) CMP essence is thrown；The throwing of CMP essence is carried out to two plates simultaneously；
11) workpiece is separated and is cleaned: first adding pure water to clean with the common cleaning agent containing both sexes hydrophilic group activating agent first
Wafer polishing face, then impregnated and be cleaned by ultrasonic with glycerine, then use (50-80): 1 dilute HF solution impregnates ultrasound, finally uses
Pure water ultrasound dries mounted box.
Single-sided polishing wafer processing method proposed by the present invention corrodes chip after per pass manufacturing procedure, eliminates
Machining stress, and repair surface precision.Full water-soluble adhesive is used simultaneously rather than paraffin bond wafer, it is no longer necessary to bonding die
Machine, while avoiding paraffin cleaning and influence of the hot adhesion to chip processing quality.
In addition, this technique two sides simultaneous processing, and set with the single-sided process equipment of sample dish diameter and improved two-sided processing
Standby price is similar, and the present invention makes the processing quantity of two-sided process equipment reach the 2 times or more of single-sided process equipment processing quantity,
Processing efficiency greatly improves.
The material loss of this process wafer is small, and the total processing capacity of grinding and polishing only has 50-70 μm, and traditional handicraft (is set containing single-sided process
It is standby) for processing capacity at 200 μm or so, 2 inch wafer imports also want 70 μm or so and with wafer at line equipment processing capacity is most ideal
Diameter increases and increases.
The above embodiment of the present invention is only example to illustrate the invention, and is not to implementation of the invention
The restriction of mode.For those of ordinary skill in the art, other can also be made not on the basis of the above description
With the variation and variation of form.Here all embodiments can not be exhaustive.It is all to belong to technical solution of the present invention
Changes and variations that derived from are still in the scope of protection of the present invention.
Claims (4)
1. a kind of water solubility bonding wafer agent, it is characterised in that: be made of four kinds of components of following mass parts, gum arabic
100；Pure water 160-185；Aluminium alum 15-30；Glycerol 15-25.
2. water solubility bonding wafer agent according to claim 1, it is characterised in that: preferred mass part is gum arabic
100；Pure water 175-184；Aluminium alum 16-25；Glycerol 18-22.
3. water solubility bonding wafer agent according to claim 1 or 2, it is characterised in that: be prepared as follows to obtain:
A) it weighs and the comparable pure water of gum arabic quality and is heated to 60 DEG C or more, the gum arabic of powdery is then added
It is mixed, stirs evenly to form gel Arabic gum；
B) aluminium alum and remaining pure water are mixed to be configured to aluminium alum solution；
C) aluminium alum solution is uniformly mixed with gel Arabic gum；
D) finally glycerol is poured into the mixed liquor that step c) obtains, stirs evenly and obtains water soluble adhesive.
4. SAW device single-sided polishing substrate piece preparation method, which is characterized in that at the non-processing face of bonding chip, adopt
Bonding agent is any water-soluble bonding wafer agent of claim 1-3.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710439400.6A CN107418473B (en) | 2017-06-12 | 2017-06-12 | A kind of water solubility bonding wafer agent |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710439400.6A CN107418473B (en) | 2017-06-12 | 2017-06-12 | A kind of water solubility bonding wafer agent |
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| Publication Number | Publication Date |
|---|---|
| CN107418473A CN107418473A (en) | 2017-12-01 |
| CN107418473B true CN107418473B (en) | 2019-06-18 |
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ID=60428878
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| CN201710439400.6A Active CN107418473B (en) | 2017-06-12 | 2017-06-12 | A kind of water solubility bonding wafer agent |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111286304A (en) * | 2020-03-18 | 2020-06-16 | 李宏儒 | Water-soluble adhesive |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005061647A1 (en) * | 2003-12-19 | 2005-07-07 | Wtb Biotech Gmbh | Multicomponent binder, and use thereof |
| DE102004011231A1 (en) * | 2004-01-27 | 2005-08-11 | Wtb Biotech Gmbh | Multi-component binder for making products from natural materials, e.g. insulating board from wood chips, contains polysaccharide, inorganic salt, water and adhesive, e.g. synthetic adhesive or natural protein |
| WO2006087734A2 (en) * | 2005-02-16 | 2006-08-24 | Soumen Roychowdhury | A water soluble lamination adhesive |
| CN104952701A (en) * | 2015-05-13 | 2015-09-30 | 北京通美晶体技术有限公司 | Special-shaped semiconductor wafer and preparation method thereof |
-
2017
- 2017-06-12 CN CN201710439400.6A patent/CN107418473B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005061647A1 (en) * | 2003-12-19 | 2005-07-07 | Wtb Biotech Gmbh | Multicomponent binder, and use thereof |
| DE102004011231A1 (en) * | 2004-01-27 | 2005-08-11 | Wtb Biotech Gmbh | Multi-component binder for making products from natural materials, e.g. insulating board from wood chips, contains polysaccharide, inorganic salt, water and adhesive, e.g. synthetic adhesive or natural protein |
| WO2006087734A2 (en) * | 2005-02-16 | 2006-08-24 | Soumen Roychowdhury | A water soluble lamination adhesive |
| CN104952701A (en) * | 2015-05-13 | 2015-09-30 | 北京通美晶体技术有限公司 | Special-shaped semiconductor wafer and preparation method thereof |
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| CN107418473A (en) | 2017-12-01 |
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