CN107403773B - Power module, method of manufacturing the same, inverter, and vehicle drive system - Google Patents

Power module, method of manufacturing the same, inverter, and vehicle drive system Download PDF

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Publication number
CN107403773B
CN107403773B CN201710239220.3A CN201710239220A CN107403773B CN 107403773 B CN107403773 B CN 107403773B CN 201710239220 A CN201710239220 A CN 201710239220A CN 107403773 B CN107403773 B CN 107403773B
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circuit board
power module
semiconductor switch
inverter
layer
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CN201710239220.3A
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CN107403773A (en
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克劳迪亚·伊里斯·霍普芬希茨
亚历山大·比尔克
沃尔夫冈·穆勒
曼纽尔·施瓦布
沃尔夫冈·舍恩
魏俊生
贡特尔·霍萨克
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ZF Friedrichshafen AG
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ZF Friedrichshafen AG
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    • H—ELECTRICITY
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    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
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Abstract

The invention relates to a power module, a method of manufacturing the power module, an inverter, and a vehicle drive system. A power module for operating an electric machine (11) has at least one Ga semiconductor switch (13) for conducting a current to a phase (U, V, W) of the electric machine (11). The Ga semiconductor switch (13) has a contact side (13A) and an opposite rear side (13B), wherein a contact for electrical contacting of the Ga semiconductor switch (13) is arranged on the contact side (13A), and a cooling element (16) for conducting heat away from the Ga semiconductor switch (13) is arranged on the rear side (13B). The invention also relates to a manufacturing method for such a power module, an inverter (10) having such a power module, and a vehicle drive system having such an inverter (10).

Description

Power module, method of manufacturing the same, inverter, and vehicle drive system
Technical Field
The invention relates to a power module for operating an electric machine, comprising at least one Ga semiconductor switch (Ga-Ga, Ga-based) for conducting a current to a phase of the electric machine. The invention also relates to a method for producing the power module, an inverter having such a power module and a vehicle drive system having such an inverter.
Background
Inverters of vehicle drive systems usually have semiconductor switches which are combined in a structural unit, also referred to as a power supply module or power module. In conventional power modules, the semiconductor switches are interconnected in a three-phase full bridge circuit. The semiconductor switches are embodied here as silicon-insulated gate bipolar transistors (silicon IGBTs) each having an associated silicon freewheeling diode. The number of silicon chips depends on the required current carrying capability of the power module or inverter and the current carrying capability of the individual silicon IGBTs. For example, a 40KW inverter/power module requires 12 silicon IGBTs and correspondingly 12 silicon diodes.
Silicon IGBTs are usually manufactured in a double-sided "channel structure", that is, there is a gate interface and a source interface on one side of the IGBT and a drain interface on the opposite side. Therefore, such silicon IGBTs must be electrically contacted from both sides. Fig. 1 shows an exemplary longitudinal section through a power module constructed in this way. In general, the electrical contacting of the silicon IGBT chip 1 is effected by means of a metallized ceramic carrier 2, also referred to as a DCB carrier (direct copper bonded). The ceramic carrier has a ceramic carrier structure/plate 2' with metal layers 2 ″ (for example, in particular copper layers) applied on both sides. The rear side of the IGBT chip 1 is soldered directly to the DCB carrier 2 by means of a solder connection/solder layer 5 and is thus electrically contacted. Accordingly, the silicon diode 1' is also soldered as a reverse diode to the DCB carrier 2 and is contacted. Conversely, the opposite front side of the silicon IGBT chip 1 is in electrical contact with the DCB carrier 2 by means of bonding wires 3, for example aluminum wires. The DCB carrier 2 has a conductor track structure on the upper side of the aligned silicon IGBT chip 1 in order to achieve the required electrical connection between the structural elements 1, 1' arranged on the DCB carrier 2 and the external interface/pin 8.
Furthermore, such conventional power modules have a particularly good heat-conducting, usually efficiently cooled base plate 4, which is made of aluminum, for example. The electrical insulation between the substrate 4 and the conductor tracks on the DCB carrier 2 is achieved by means of the ceramic carrier structure 2' of the DCB carrier 2. It also provides heat transfer from the silicon IGBT chip 1 to the substrate 4. Furthermore, for high vibration resistance, these components are usually embedded in a common sheath 6 in a potting material 7, for example silicone gel or resin. The DCB carrier 2 is connected to the substrate 4 by means of a solder connection/solder layer 5.
The size and positioning of the driver circuit that drives one of the silicon IGBTs 1 is predetermined by the power module itself, since the input and signal pins 8 of the power module should be in direct contact with the driver circuit. Accordingly, the positioning of the other connections for an inverter constructed from such a power module is likewise determined by the geometry of the power module. The phases of the electrical machine are electrically connected to the associated power modules via a large number of conductor rails (also referred to as busbars). The conductor rails usually run across at least half of the inverters. Since the current flowing in the conductor rails may become particularly large, the conductor rails emit a large amount of heat into the inverter. Heat must then be conducted away from the inverter. Since, in an inverter, the power module in the vicinity of the intermediate current capacitor requires the greatest structural space, the design of the inverter is essentially dependent on the structure of the power module.
As already explained, the heat dissipation in the power module based on silicon IGBTs is achieved by the entire multi-layer structure of the power module explained above, i.e. the multi-layer structure from the IGBT1 to the substrate 4. This leads to thermal stresses in the structure and thus generally to degradation and separation of the solder joint 5 and the wire connection 3.
The solder connection 5 between the silicon IGBT chip 1 and the DCB carrier 2 is usually realized by means of a soft solder based on tin. At temperatures above 150 c, degradation of the solder connections 5 can result, which ultimately leads to fracture. Typically, a brittle intermetallic Cu-Sn region is formed at the copper boundary of the metal layer 2 ″ on the upper side of the solder connection 5, and this Cu-Sn region expands, which leads to brittle fracture. A reliable welded connection 5 is then only obtained in such a way that the current through the welded connection is limited so that no temperatures exceeding approximately 150 ℃ prevail in the welded connection. This of course also limits the possible current through the IGBTs 1 and thus the power density of the power module or the inverter formed therewith.
As already explained, the DCB carrier 2 is also connected to the base plate 4 by means of a solder connection 5. The different thermal expansion coefficients of the materials of the DCB carrier 2, the base plate 4 and the solder connections 5 are disadvantageous here. As a result, a fracture in the solder connection 5 or a separation of the layers 2', 2 ″ of the DCB carrier 2 is also often determined here.
Another frequent cause of failure is the falling or separation of the wires 3 from the respective welding sites. A number of analyses have been carried out on this phenomenon, which is currently believed to be due to the large differences in the thermal expansion coefficients of the materials involved. Thus, the aluminum wire 3 is replaced by a copper wire or by a combination of aluminum and copper wires. Different wire geometries were also tested, as well as a very wide range of wire configurations and different types of potting material. It is emphasized here that copper wires having a diameter of at least 300 μm and the copper metallization of the IGBT chip 1 are necessary for a reliable electrical contacting thereof.
The metallization of the silicon IGBT chip 1 contacts the doped regions of the IGBT and forms contact pads, which in turn can be contacted by bonding wires 3. The presently preferred material for metallization is aluminum, since aluminum has the usual ceramic SiO with DCB carrier 2 2 Good adhesion and which can be structured into conductor tracks simply in a dry etching process. Copper, however, has a better electrical value, for example a lower electrical resistance, in particular compared to aluminum, so that an inherently finer conductor track structure can be realized with copper. In contrast, however, it is difficult to produce conductor structures made of copper in a process-engineering manner, and copper has a tendency to contaminate and thus become brittle the contact partners, such as solder, with which it comes into contact. This makes simple manufacturing processes of power modules with copper metallized silicon IGBT chips difficult to achieve.
Thus, the power density of conventional power modules has so far been little improved. There is a consideration of power modules in which IGBT chips are buried in a multi-layer circuit board (multilayer circuit board). Here, the contact pads on the upper side of the IGBT chip are not in contact with lines, but rather with vias (Via) which are layered through the circuit board and filled with electroplated copper. However, copper metallized IGBT chips are required for this purpose, which are not available on the market for the reasons mentioned above. Furthermore, such an arrangement of IGBT chips requires a complex, as yet immature, manufacturing process. The continuous reliability of such power modules is also problematic. In any case, the increase in the power density of the power module leads to an improvement in the heat dissipation of the IGBTs contained therein and an increase in the high temperature resistance of the component.
The use of gallium nitride-based switches, so-called GaN power semiconductors or GaN semiconductor switches, offers the possibility of increasing the power density and reliability. The use of power modules for rail vehicles with gallium nitride-based semiconductor switches is known, for example, from EP 22590212 a 1.
Disclosure of Invention
The aim of the invention is to improve a power module having a gallium-based semiconductor switch.
This object is achieved by the features of the independent claims. Preferred embodiments can be derived from the dependent claims.
Therefore, a power module for operating an electric machine is proposed. The power module has at least one Ga semiconductor switch, in particular two or more Ga semiconductor switches, for conducting a current to a phase of the electrical machine. The Ga semiconductor switch has a contact side and an opposite rear side, wherein contacts, in particular contact pads, are arranged on the contact side for preferably completely electrically contacting the Ga semiconductor switch. A cooling element is arranged on the rear side for conducting away heat from the Ga semiconductor switch. The power module is in particular designed for an electric vehicle drive system, i.e. as an electric vehicle drive system power module.
The rear side is thus contactless, i.e. it has no contact pads or the like for electrically contacting the Ga semiconductor switches. The Ga semiconductor switch forms in particular a chip, wherein the chip has a back side and a contact side for electrical contacting.
Ga semiconductor switches are power semiconductor switches based on gallium, in particular GaN semiconductor switches (GaN ═ gallium nitride) or AlGaN semiconductor switches (AlGaN ═ gallium aluminum nitride), for example. Which form a High Electron Mobility Transistor (HEMT) or Gate Injection Transistor (GIT). They have a relatively high band pitch and, in turn, a large band gap relative to silicon transistors, such as silicon IGBTs. This results in, for example, an increased possible operating temperature, a greater maximum current and thus a higher current density.
The contacts on the contact side of the Ga semiconductor switch are preferably each implemented as a contact pad. The contact pads are contact surfaces which are embodied for electrically contacting the respective component. The contact pads can be prepared accordingly for this purpose, for example they can be provided with a metal layer. The contact pads can therefore additionally already be provided with a solder layer, so that a soldered connection, for example, to a circuit board can be easily achieved.
In conventional IGBT power modules, the IGBT chip is always contacted on both sides. The contact on the front side is usually contacted by the wire connection mentioned at the outset, while the contact on the rear side is usually contacted by a direct solder connection to the DCB carrier. In contrast, in the proposed power module with Ga semiconductor switches, all contacts are present on the same side of the chip, i.e. on the contact side. All contacts can thus be contacted simultaneously, in particular by arranging the Ga semiconductor switches on a carrier, for example a DCB carrier or a multi-layer circuit board. Thus, no susceptible bond wire connections are required. Furthermore, the chips of the Ga semiconductor switches are only half as large as the corresponding chips of the silicon IGBT. Thus, the power density is improved.
The cooling element may have a structure suitable for heat conduction away, such as one or more cooling openings/channels or cooling ribs/projections/pins for a bypass flow with a cooling fluid, such as a cooling liquid. The cooling element may be part of a housing of the power module. It may also be part of the housing of the inverter containing the power module. It may in particular be part of an outer casing of the inverter, which protects the interior of the inverter from environmental conditions outside the inverter, such as rain, snow, splashed water, broken stones, etc. At least one drive circuit for driving the power module/modules and an intermediate circuit capacitor can then also be arranged within the inverter, in particular in the vicinity of the power module/modules. The cooling element can be made of aluminum or copper, or of a correspondingly good heat-conducting material. The cooling element may be a cooling plate. The cooling element can rest directly on the rear side of the Ga semiconductor switch. The cooling element can also have a flexible, thermally conductive material, i.e. a material which conducts heat well and is at least flexible to begin with, such as a thermally conductive pad or a thermally conductive paste, and is therefore arranged directly on the rear side of the Ga semiconductor switch.
Due to the small parasitic inductance (which results from the compact embodiment of the power module with the Ga semiconductor switches), the driver circuit assigned to the power module can be arranged spatially closer to the power module, which can be integrated in particular. Thus achieving better electrical performance of the power module. This allows a better exploitation of the maximum voltage of the Ga semiconductor switch chip. Another advantage resides in turn-off overvoltage of the power module
Figure BDA0001268873110000061
Due to the small parasitic inductance, is significantly reduced (in comparison to a conventional power module with about 15nH, here less than 5 nH). Consequently, switching losses are also reduced and the efficiency of the inverter formed thereby is improved.
The power density of the power module can be increased by using bidirectional lateral gallium nitride transistors as Ga semiconductor switches. Unlike IGBTs, this type of Ga semiconductor switch does not require a reverse freewheeling diode because Ga semiconductor switches theoretically have reverse conductivity. In other words, during the generator operation of the power module, the Ga semiconductor switches conduct the current occurring there (reverse conduction) in the direction opposite to the motor operation without any problem, without additional diodes being required. Therefore, the number of chips in the power module may be reduced by 50% compared to a power module having a conventional IGBT. The reliability of the power module is simultaneously increased by the reduction of the number of structural elements. In order to prevent the losses from increasing when reverse conduction is effected by the Ga semiconductor switch, a diode for reverse conduction can still be connected in parallel with the Ga semiconductor switch. Ga diodes are preferred here. However, power components or diodes which are based on silicon or SiC and can conduct laterally can also be used for this purpose.
Preferably, the Ga semiconductor switch is completely or partially embedded in the uppermost circuit-board layer of the multi-layer circuit board. The uppermost circuit board layer is also referred to as the top layer or top layer. It is not necessarily located "above". The uppermost circuit board layer is understood to be one of the two closed layers of the multi-layer circuit board. That is to say, the Ga semiconductor switch is arranged completely or partially within the uppermost closed circuit board layer. In this case, the contact of the Ga semiconductor switch is in electrical contact with the printed circuit board, in particular by means of a soldering or sintering process.
The electrical contacting of the contact sections of the Ga semiconductor switches is effected in particular by means of the conductor tracks of the uppermost circuit board layer itself or by means of the conductor tracks of the circuit board layers directly below it or by means of vias in a multi-layer circuit board which run through one or more circuit board layers of the circuit board. That is, a circuit board layer may be an insulating layer, that is, electrically insulating, or may be an insulating layer having a conductor layer (e.g., a copper layer or conductor trace) disposed thereon or therein.
The positioning and electrical contacting of the Ga semiconductor switches in the uppermost circuit board layer of the multi-layer circuit board takes place in a first step in a preferred method for producing a power module. By these measures a flat or planar structure of the power module is produced and the power density is improved. The at least partial embedding of the uppermost circuit board delamination results in an improved mechanical stability.
In other words, the Ga semiconductor switches or the chips forming the Ga semiconductor switches are in particular arranged directly on a multi-layer circuit board, wherein the multi-layer circuit board is preferably a PCB (printed circuit board). The electrical contacting of the Ga semiconductor switch can be realized, for example, by a soldering process, such as, for example, TLP (transient liquid phase), or by a sintering process, such as, for example, silver sintering (Ag-sintering). The resulting electrical connection between the Ga semiconductor switch and the multi-layer circuit board is very temperature-resistant and is therefore particularly suitable for the possibly high operating temperatures of the Ga semiconductor switch. Silver as an electrical contact material for Ga semiconductor switches in particular significantly increases the reliability of the power module.
The uppermost circuit board layer is thinner or in particular as thick as the Ga semiconductor switch. If a plurality of Ga semiconductor switches or chips with Ga semiconductor switches are provided, a cavity can be provided in each Ga semiconductor switch or each chip in the uppermost circuit board layer, or a common cavity can be provided for all or a group of Ga semiconductor switches or chips. The uppermost circuit board layer is in particular a layer made of prepreg fibers. The uppermost circuit board is layered and thus may form an insulating layer. The cavity is for example a recess in a circuit board laminate. The recess and the Ga semiconductor switch chip or chips arranged therein are just or approximately as large. The uppermost circuit-board layer is as thick as one or more Ga semiconductor switches, so that the cooling element can rest flat on the chip of the Ga semiconductor switch and also on the uppermost circuit-board layer.
A plurality of Ga semiconductor switches are preferably arranged in parallel, wherein in a second step of the production method following the first step, the cavities or interstices between the plurality of Ga semiconductor switches are filled with a filling material. For example, the cavities remaining between the Ga semiconductor switches are potted with a potting material. Then, the cooling element is subsequently arranged on the Ga semiconductor switch, for example in a third step of the manufacturing method.
The electrical contacting of the gate interface of the Ga semiconductor switch is preferably effected by conductor tracks in further circuit board layers of the multi-layer circuit board which are located below the uppermost circuit board layer with respect to the Ga semiconductor switch. The electrical contact of the source and/or drain interfaces of the Ga semiconductor switch is then made via at least one conductor track in a further circuit board layer of the multi-layer circuit board which is located below the uppermost circuit board layer. The contacting of the gate interface, the source interface and the drain interface may thus be realized in a unique or different circuit board layer of a multi-layered circuit board. The electrical connection of the individual circuit board layers to the corresponding contact pads of the Ga semiconductor switches is made via vias in the multi-layer circuit board, which vias extend through the required number of circuit board layers.
Preferably, the main current lines (busbars), i.e. the lines which conduct the drive current, such as, for example, direct current lines and phase lines, are integrated into the multi-layer circuit board. For this purpose, the corresponding copper line can be embedded in the multi-layer circuit board, in particular as an inlay. Thus avoiding external wiring. No additional electrical insulation of such lines is then required as well. Correspondingly saving weight and installation space.
Preferably, the power module has not only exactly one Ga semiconductor switch, but also a plurality of, in particular two or more, Ga semiconductor switches, which are then interconnected in a half-bridge or full-bridge circuit for conducting current to a common phase of the electric machine. In this case, the Ga semiconductor switches are embedded in particular directly in parallel, i.e. without further electrical components located between them, completely or partially in the uppermost circuit board layer. The power density can also be improved.
Preferably, a common cooling element, such as, for example, a cooling plate, is provided for the Ga semiconductor switches of the half-bridge circuit or the full-bridge circuit. Such a cooling element is arranged on the back side of the Ga semiconductor switch. Since all contact pads or contacts for the electrical contacting of the Ga semiconductor switches are arranged on their circuit-board-side contact side, no contact is present on the rear side. The rear side is therefore well suited for the placement of a common cooling element thereon.
The proposed inverter is used for operating an electric machine, in particular for an electric machine of a drive system of an electric vehicle. The inverter has at least one power module implemented according to the invention, which has a plurality of Ga semiconductor switches for conducting current to the phases of the electric machine, and the inverter has a drive circuit for actuating (driving) the Ga semiconductor switches and has direct current lines for conducting direct current to the Ga semiconductor switches, and has intermediate circuit capacitors, which are connected between the direct current lines.
In the vehicle drive system also proposed, the electric machine serves as a traction drive and is operated by the proposed inverter, i.e. the electrical power for the drive is provided as required. The electric machine thus provides a drive torque as required for propelling the vehicle, for example a passenger or commercial vehicle. The electric machine is in particular a rotating field machine, for example a synchronous machine or an asynchronous machine. The inverter is in particular designed as a three-phase inverter and is therefore responsible for feeding the electric machine designed for three phases. The inverter may also have more than three phase outputs for operating the polyphase machine. The vehicle drive system preferably also has a controller that controls the inverter for operating the electric motor, in particular, the drive circuit thereof. That is, the controller controls or regulates the inverter as needed. The control unit is responsible, for example, for causing the electric machine to provide the required drive torque or braking torque. The controller may also be part of the inverter.
Drawings
The invention will be described in detail below with reference to the drawings, from which other preferred embodiments and features of the invention can be derived. In this case, the schematic views show:
FIG. 1 illustrates a power module;
FIG. 2 illustrates a vehicle drive system;
fig. 3 shows an inverter;
fig. 4 shows another power module.
The power module according to fig. 1 has already been explained at the beginning. In fig. 2 to 4, identical or functionally identical components are provided with the same reference numerals.
Detailed Description
The vehicle drive system shown in fig. 2 has an inverter 10 and an electric machine 11, such as, for example, a synchronous or asynchronous machine. The electric motor 11 serves as a traction drive and is therefore mechanically coupled to a vehicle wheel 12, which can thus be driven by the electric motor 11. The electric machine 11 is embodied in three phases by way of example, i.e., the electric machine has three phases U, V, W, through which the electric machine is supplied with electrical energy as required by the inverter 10 for operation. The inverter 10 therefore has three phase interfaces on the output side. The inverter 10 has two DC interfaces on the input side for connection to the DC lines DC + and DC respectively. The direct current lines DC + and DC-are in contact with the poles of the direct current source 12, respectively. The dc power source 12 may be, for example, a traction battery or a dc generator. The vehicle drive system preferably also has a controller which controls, i.e. controls or regulates, the inverter 10 in order to operate the electric machine 11. The controller may be part of the inverter.
Fig. 3 shows an inverter 10, which is used, for example, in the vehicle drive system according to fig. 1. The present disclosure relates to a three-phase inverter for operating the electric machine 11, i.e., for feeding the phases U, V, W of the electric machine 11. In the inverter 10, the semiconductor switches 13 are interconnected in a B6 circuit (three-phase current bridge circuit). In each phase U, V, W, an electrical half-bridge is provided in a manner known per se, which has two semiconductor switches 13 connected in series (a high-side switch and a low-side switch). The half bridges are therefore coupled in parallel with one another between the two direct current lines DC +, DC-. Furthermore, an intermediate circuit capacitor 14 is coupled in parallel with the half bridge between the two direct current lines DC +, DC-.
In principle, however, the structure of the inverter 10 may also differ from that of fig. 3. For example, the inverter may be implemented as a full bridge circuit. The switch 13 is controlled by a drive circuit which is responsible for opening (non-conducting) or closing (conducting) the switch 13, for example in a pulse-width-modulated manner.
The switch 13 is currently implemented as a Ga semiconductor switch, i.e. as a gallium-based semiconductor switch, such as in particular a GaN semiconductor switch or an AlGaN semiconductor switch. Wherein single, multiple or all semiconductor switches 13 may be combined into one power module. The semiconductor switches 13 of the half-bridge or full-bridge (depending on the type of configuration of the inverter 10 in the half-bridge or full-bridge configuration) are preferably combined to form a power module.
A preferred structure of such a power module is shown schematically in fig. 4. Fig. 4 shows a longitudinal section through the power module and through the semiconductor switch 13 contained in the power module.
The power module according to fig. 4 has two Ga semiconductor switches 13 or two chips each having a Ga semiconductor switch for conducting current to a common connection 15 for connecting one of the phases U, V, W of the electric machine 11 (see fig. 2 and 3). That is, interface 15 serves as an electrical output for phase U, V, W of the power module. The semiconductor 13 forms in particular an electrical half-bridge. Thus, one of the semiconductor switches 13 may form a high side switch of the half bridge, while the other semiconductor switch forms a low side switch.
The Ga semiconductor switch 13 has a contact side 13A and an opposite back side 13B. Contact pads are provided on the contact side 13A for electrically contacting the respective Ga semiconductor switches 13. The back side 13B is contact-free, i.e. no contact pads or the like are arranged on the back side for electrically contacting the Ga semiconductor switches 13. Instead, a common cooling element 16 is applied to the rear side in order to dissipate heat from the two Ga semiconductor switches 13. For this purpose, the cooling element 16 can have a flexible, thermally conductive material, for example a thermally conductive mat, and therefore rest directly on the respective Ga semiconductor switch 13.
The Ga semiconductor switches 13 are embedded in parallel in the uppermost circuit board layer 17. The Ga semiconductor switch 13 and the uppermost circuit-board layer 17 thus together form part of a multi-layered circuit board 18. The electrical contacting of the gate interface of the Ga semiconductor switch 13 is effected here by a conductor track 18A below the uppermost circuit board layer 17.
In order to be able to feed the gate connection of the Ga semiconductor switch 13, a corresponding conductor track 18A is connected through to the upper side of the uppermost circuit board layer 17 and there is provided an interface 20, here for example a contact pad. The driver circuit of the driver module, which drives the Ga semiconductor switch 13, can be connected in a simple manner via the interface.
The electrical contact of each source and drain interface of the Ga semiconductor switch 13 is realized by a conductor track 18B in at least one or more further circuit board layers of the multi-layer circuit board 18 located below the uppermost circuit board layer 17. For this purpose, vias 19 are provided, which electrically connect the contact pads of the Ga semiconductor switches 13 to the corresponding conductor tracks 18B of the circuit board layer. The respective vias 19 are provided for electrically contacting the interface for the direct current lines DC +, DC-and the output/interface 15 with the respective conductor tracks 18B.
Currently, the two conductor tracks 18B for direct current (DC +, DC-) are exemplarily located in different circuit board layers of the multi-layer circuit board 18. One of these conductor tracks 18B runs here in the same circuit board layer as the conductor track 18B for the output 15 or the phase line U, V, W. The lowermost circuit-board layer of the multi-layer circuit-board 18 with respect to the Ga semiconductor switches 13 is preferably metallized or provided with a non-contacting metal layer. Thus, there can be arranged a second cooling element for conducting heat away from the circuit board 18.
The main advantage of such a power module is that the Ga semiconductor switch 13 is simply contacted by means of the filled via. The bond wires for contacting can be eliminated. Furthermore, the power module can be manufactured using conventional production processes. This is therefore low cost.
A higher integration and thus a reduction in the number of external contact points can be achieved by integrating the driver circuits required for driving the Ga semiconductor switches 13 into the power module or circuit board 18, i.e. by arranging the driver circuits and the Ga semiconductor switches 13 driven therewith on or in a common circuit board 18. The conductor tracks 18A are then not guided to the surface, but extend within the multi-layer circuit board 18 to the structural elements of the driver circuit there. Therefore, an additional insulating part can be eliminated. This also increases the mechanical and thermal stability.
As is clearly apparent from fig. 4, the Ga semiconductor switches 13 are each arranged in a recess or depression in the uppermost circuit board layer 17. The Ga semiconductor switches may also be arranged jointly in the recess. After the Ga semiconductor switch 13 has been inserted into the recess and after the electrical contacting, the remaining recess, which may be present, is preferably filled, for example potted. The uppermost circuit-board layer 17 is thinner or in particular equally thick than the Ga semiconductor switch 13 or the associated chip. The cooling element 16 therefore rests directly and flatly on the Ga semiconductor switch 13 and the uppermost circuit board layer 17. Thereby improving heat removal. In principle, the uppermost circuit-board layer 17 can also be omitted. Thereby resulting in a power module that is easier to manufacture. However, this results in an air gap between the circuit board 18 and the cooling element 16, so that poor heat dissipation occurs there.
It can be provided that the uppermost circuit board layer 17 is arranged first on the multi-layer circuit board 18 before the Ga semiconductor switches 13 are arranged on and in contact with the multi-layer circuit board. Alternatively, it can be provided that the Ga semiconductor switch 13 is first arranged on the circuit board 18 and is in contact therewith before the uppermost circuit board layer 17 is arranged on the circuit board.
In summary, the resulting power module provides a significantly higher power density than conventional power modules with IGBTs. The power module can be produced by means of known, well-mastered manufacturing processes. Furthermore, high reliability is provided.
List of reference numerals
1 silicon IGBT
1' silicon diode
2 metallized ceramic carrier, DCB carrier
2' ceramic carrier structure, carrier plate
2' metal layer
3 bonding wire
4 substrate
5 solder connection, solder layer
6 protective sleeve
7 potting Material
8 pin
10 inverter
11 electric machine
12 D.C. current source
13 semiconductor switch
Contact side of 13A semiconductor switch 13
Backside of 13B semiconductor switch 13
14 intermediate circuit capacitor
15 interface and output end
16 cooling element, cooling plate
17 uppermost circuit board layer
18 multi-layered circuit board
18A conductor trace
18B conductor trace
19 Electrical path
20 interface, input terminal
DC + DC current line
DC-DC current line
U, V, W phase

Claims (11)

1. Power module for operating an electric machine (11), comprising at least:
a Ga semiconductor switch (13) for conducting a current to a phase (U, V, W) of the electric machine (11),
it is characterized in that the preparation method is characterized in that,
the Ga semiconductor switch (13) has a contact side (13A) and an opposite back side (13B), which is contactless,
wherein a contact for electrical contacting of the Ga semiconductor switch (13) is arranged on the contact side (13A), and
a cooling element (16) for conducting heat away from the Ga semiconductor switch (13) is arranged on the rear side (13B),
wherein the Ga semiconductor switch (13) is at least partially embedded in an uppermost circuit board layer (17) of a multi-layer circuit board (18),
wherein the electrical contacting of the gate interface of the Ga semiconductor switch (13) is realized by a conductor track (18A) in a circuit board layer below the uppermost circuit board layer (17) of the multi-layered circuit board (18), and
wherein the electrical contacting of the source and/or drain interfaces of the Ga semiconductor switch (13) is realized by conductor tracks (18B) in a further circuit board layer below the uppermost circuit board layer (17) of the multi-layer circuit board (18).
2. The power module as claimed in claim 1, having a plurality of Ga semiconductor switches (13) which are interconnected in a half-bridge or full-bridge circuit for conducting current to a common phase (U, V, W) of the electrical machine (11), wherein the Ga semiconductor switches (13) are at least partially embedded in parallel in an uppermost circuit board layer (17).
3. Power module according to one of claims 1 to 2, having a plurality of Ga semiconductor switches (13) which are interconnected in a half-bridge circuit or a full-bridge circuit for directing current onto a common phase (U, V, W) of the electrical machine (11), wherein a common cooling element (16) is provided for the Ga semiconductor switches (13) of the half-bridge circuit or full-bridge circuit.
4. The power module of any one of claims 1-2 wherein the power module is a power module for an electric vehicle drive system.
5. Method for manufacturing a power module according to any of claims 1 to 4, wherein in a first step a Ga semiconductor switch (13) is arranged in an uppermost circuit board layer (17) of a multi-layer circuit board (18) and a contact of the Ga semiconductor switch (13) is electrically contacted with the multi-layer circuit board (18).
6. Method according to claim 5, wherein in a first step the Ga semiconductor switch (13) is arranged into a cavity of the uppermost circuit board layer (17).
7. Method according to claim 6, wherein the uppermost circuit board layer (17) is as thick as the Ga semiconductor switch (13).
8. Method according to any of claims 5 to 7, wherein a plurality of Ga semiconductor switches (13) are arranged in parallel and wherein in a second step following the first step the cavities between the plurality of Ga semiconductor switches (13) are filled by a filling material.
9. An inverter (10) for operating an electric machine (11), comprising:
the power module of any one of claims 1 to 4 having a plurality of Ga semiconductor switches (13) for directing current onto a phase (U, V, W) of the electrical machine (11); and
a drive circuit for operating the Ga semiconductor switch (13); and
a direct current line (DC +, DC-) for conducting a direct current to the Ga semiconductor switch (13); and
an intermediate circuit capacitor (14) electrically coupled between the direct current lines (DC +, DC-).
10. The inverter of claim 9, wherein the inverter is an inverter for an electric vehicle drive system.
11. Vehicle drive system having an electric machine (11) as traction drive and having an inverter (10) according to claim 9 for operating the electric machine (11).
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