CN107395038A - A kind of generator power circuit of more MOS wired in parallel - Google Patents
A kind of generator power circuit of more MOS wired in parallel Download PDFInfo
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- CN107395038A CN107395038A CN201710701341.5A CN201710701341A CN107395038A CN 107395038 A CN107395038 A CN 107395038A CN 201710701341 A CN201710701341 A CN 201710701341A CN 107395038 A CN107395038 A CN 107395038A
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/02—Conversion of ac power input into dc power output without possibility of reversal
- H02M7/04—Conversion of ac power input into dc power output without possibility of reversal by static converters
- H02M7/12—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/21—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/217—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M7/23—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only arranged for operation in parallel
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0003—Details of control, feedback or regulation circuits
- H02M1/0038—Circuits or arrangements for suppressing, e.g. by masking incorrect turn-on or turn-off signals, e.g. due to current spikes in current mode control
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
Abstract
The present invention provides a kind of generator power circuit of more MOS wired in parallel, including the first circuit and second circuit of mirror image, and resonance circuit and load each other；First circuit and second circuit include drive circuit, metal-oxide-semiconductor power model and the resonant inductance being sequentially connected respectively；Two resonant inductances of the first circuit and second circuit, for suppressing to the high-frequency ac pulse signal flowed through, make the value of the high-frequency ac pulse signal of two resonant inductance output consistent.The present invention not only can guarantee that the electric current for flowing through two metal-oxide-semiconductor power models in parallel is consistent；And it is simple and easy, cost is cheap, circuit structure is simple；Further, moreover it is possible to significantly improve the compatibility to metal-oxide-semiconductor, extend the life-span of metal-oxide-semiconductor, while ensure the safe to use of metal-oxide-semiconductor.
Description
Technical field
The present invention relates to power technique fields, the hair of more MOS wired in parallel in high-frequency and high-voltage generator is particularly related to
Raw device power circuit.
Background technology
, it is necessary to which highfield excites electron cloud in medical imaging equipment digital imaging technology, X ray is produced, wherein high
Frequency high pressure generator is used to required electric field.The major function of the high-frequency and high-voltage generator is the 380V that power frequency is inputted
AC conversion be tens of thousands of to ten tens of thousands of volts of high voltage direct current, in order to reduce the volume of the generator, we are general
High-frequency inversion will be carried out again after 380V AC rectification, the alternating-current pulse after inversion is boosted by the generator, rectification, most
Load is output to by high-tension cable afterwards.
Because working time when producing ray is short, generally within 1 second, the mode of operation of indivedual short time is only several
Individual millisecond, it requires that caused immediate current is very big in reversals.In order to reduce the volume of generator, it would be desirable to
Switching frequency is improved, we accomplish 100KHZ-300KHZ VFC at present, and peak power has accomplished 100KW.In view of frequency is most
For height in 300KHZ, the switching device that can meet on the market only has MOSFET (Metallic Oxide Semiconductor
Field effecttransistor), it is not limited to the first generation plane MOS, second generation COOLMOS, or the third generation SIC MOS
And the MOSFET of other different process.MOSFET current class be not usually it is very high, current class it is big also there was only tens
Peace, and maximum current peak can arrive 600A during our generator work, so needing multiple MOSFET in parallel.Multiple MOSFET
After parallel connection, junction capacity increase proposes very high request to the ability of drive module, and for this, we divide MOS modules inverter circuit
Into two groups, each unit multiple metal-oxide-semiconductors in parallel again, in Fig. 1 in order to which simplicity only draws one.Due to flowing through whole MOS modules
Electric current it is very big, and single MOSFET current class is very small, it is desirable that electric current can uniform flow it is each
MOSFET.Generally we are isometric by PCB layout that cabling mode consistent mode reduces stray inductance etc.,
Disturbed with this to reduce the driving between different MOSFET as far as possible, but in different batches MOSFET and in face of different EMC
During (Electromagnetic Compatibility electromagnetic interferences) interference signal, and each discrete component such as resistance, electric capacity miss
When difference is different, interference can be produced to the electric current for flowing through different metal-oxide-semiconductor power models, cause current-unbalance, work long hours
Bombing event is easily caused to occur.
Therefore, it is necessary to provide one kind can correspond to solve it is above-mentioned due to MOSFET batches are different and EMC interference signals with
And discrete component error it is different when it is caused flow through metal-oxide-semiconductor power model current-unbalance the problem of generator power electricity
Road.
The content of the invention
The technical problems to be solved by the invention are：A kind of generator power circuit of more MOS wired in parallel is provided, realized
To the parallel current-sharing of more MIS modules, ensure to flow through the current balance of MOS modules.
In order to solve the above-mentioned technical problem, the technical solution adopted by the present invention is：
A kind of generator power circuit of more MOS wired in parallel, including the first circuit and second circuit of mirror image each other, with
And resonance circuit and load；
First circuit and second circuit include drive circuit, metal-oxide-semiconductor power model and the resonance being sequentially connected respectively
Inductance；
It is connected after the resonant inductance parallel connection of first circuit and second circuit with the input of the resonance circuit, it is described
The output end of resonance circuit connects with the load；
The drive circuit, for the pulse signal received after isolation is amplified, to be exported to the metal-oxide-semiconductor power
Module；
The metal-oxide-semiconductor power model, for the frequency according to the drive circuit, after carrying out isolation amplification by what is received
Pulse drive signal carry out high-frequency inversion, output is to resonant inductance after forming high-frequency ac pulse signal；
Two resonant inductances of the first circuit and second circuit, for pressing down to the high-frequency ac pulse signal flowed through
System, make the value of the high-frequency ac pulse signal of two resonant inductance output consistent；
Two resonant inductances of the resonance circuit and the first circuit and second circuit form LLC resonance circuits, the LLC
Resonance circuit is used to carry out the high-frequency ac pulse signal frequency-selecting control according to the frequency of the drive circuit, and output is corresponding
Size of current to load.
The beneficial effects of the present invention are：The present invention is by by the resonant inductance of the metal-oxide-semiconductor power model rear class after parallel connection
Split and connect a resonant inductance as two independences, equivalent resonant inductance, each metal-oxide-semiconductor power model.Utilize inductance electricity
The principle that stream can not be mutated, identical by two resonant inductance amounts, the rejection ability of the electric current to flowing through is also identical, can prevent electricity
The mutation of stream so that the electric current that two metal-oxide-semiconductor power models in parallel flow through is consistent.The present invention with it is simple and easy, cost is cheap,
The simple mode of circuit structure realizes the equilibrium for the electric current for flowing through paralleling MOS tube power module.
Brief description of the drawings
Fig. 1 is a kind of structure principle chart of the generator power circuit of more MOS wired in parallel of the present invention；
Fig. 2 is a kind of particular circuit configurations figure of the generator power circuit of more MOS wired in parallel of the embodiment of the present invention one.
Label declaration：
1st, the first circuit；2nd, second circuit；3rd, resonance circuit；4th, load；
11st, the first drive circuit；12nd, the first metal-oxide-semiconductor power model；13rd, the first resonant inductance；
21st, the second drive circuit；22nd, the second metal-oxide-semiconductor power model；23rd, the second resonant inductance.
Embodiment
To describe the technology contents of the present invention, the objects and the effects in detail, below in conjunction with embodiment and coordinate attached
Figure is explained.
The design of most critical of the present invention is：Each metal-oxide-semiconductor power model connects a resonant inductance, and resonant inductance is in parallel
After connect resonance circuit, realize the equilibrium for the electric current for flowing through paralleling MOS tube power module.
It refer to Fig. 1, the present invention provides a kind of generator power circuit of more MOS wired in parallel, including mirror image each other
First circuit and second circuit, and resonance circuit and load；
First circuit and second circuit include drive circuit, metal-oxide-semiconductor power model and the resonance being sequentially connected respectively
Inductance；
It is connected after the resonant inductance parallel connection of first circuit and second circuit with the input of the resonance circuit, it is described
The output end of resonance circuit connects with the load；
The drive circuit, for the pulse signal received after isolation is amplified, to be exported to the metal-oxide-semiconductor power
Module；
The metal-oxide-semiconductor power model, for the frequency according to the drive circuit, after carrying out isolation amplification by what is received
Pulse drive signal carry out high-frequency inversion, output is to resonant inductance after forming high-frequency ac pulse signal；
Two resonant inductances of the first circuit and second circuit, for pressing down to the high-frequency ac pulse signal flowed through
System, make the value of the high-frequency ac pulse signal of two resonant inductance output consistent；
Two resonant inductances of the resonance circuit and the first circuit and second circuit form LLC resonance circuits, the LLC
Resonance circuit is used to carry out the high-frequency ac pulse signal frequency-selecting control according to the frequency of the drive circuit, and output is corresponding
Size of current to load.
Further, in addition to MCU；The output end of the MCU respectively with the first circuit and the drive circuit of second circuit
Input connection；
The MCU, for output pulse signal to drive circuit.
The operation principle of the generator power circuit of above-mentioned more MOS wired in parallel is：
By signal Amplification and insulation after the outside MCU signals of drive circuit reception, to drive metal-oxide-semiconductor power model, make metal-oxide-semiconductor work(
Metal-oxide-semiconductor alternate conduction in rate module, output AC signal to connected resonant inductance；The resonant inductance of first circuit is defeated
The signal of the resonant inductance output of the signal and the second circuit of equal state that go out is equivalent, by resonance electricity after two signal parallel connections
Road powers to ohmic load.
Further, the drive circuit includes four road driving pulse outputs；The metal-oxide-semiconductor power model includes four tunnels
Metal-oxide-semiconductor；
Four road driving pulse outputs of the drive circuit are corresponding with four road metal-oxide-semiconductors of the metal-oxide-semiconductor power model respectively
Connection.
Further, the drive circuit includes four road driving pulse outputs；The metal-oxide-semiconductor power model includes four tunnels
Metal-oxide-semiconductor；
Four road driving pulse outputs of the drive circuit are corresponding with four road metal-oxide-semiconductors of the metal-oxide-semiconductor power model respectively
Connection.
Further, four road metal-oxide-semiconductors of the metal-oxide-semiconductor power model are the first metal-oxide-semiconductor Q1, the second metal-oxide-semiconductor Q2, the 3rd
Metal-oxide-semiconductor Q3, the 4th metal-oxide-semiconductor Q4；
The metal-oxide-semiconductor power model also includes the first capacitor C1；The load is resistance R1；
The drain electrode with the first metal-oxide-semiconductor Q1, the second metal-oxide-semiconductor Q2 drain electrode are connected the anode of the first capacitor C1 respectively,
The source electrode with the 3rd metal-oxide-semiconductor Q3, the 4th metal-oxide-semiconductor Q4 source electrode are connected negative electrode respectively；First metal-oxide-semiconductor Q1 grid and the PFM1
Connection, the second metal-oxide-semiconductor Q2 grid are connected with the PFM2, and the 3rd metal-oxide-semiconductor Q3 grid is connected with the PFM3, the 4th MOS
Pipe Q4 grid is connected with the PFM4；The source electrode of the first metal-oxide-semiconductor Q1 be connected with the drain electrode of the 3rd metal-oxide-semiconductor Q3 after with
Resistance R1 one end connection；The source electrode of the second metal-oxide-semiconductor Q2 be connected with the drain electrode of the 4th metal-oxide-semiconductor Q4 after with the first circuit
Resonance circuit connection.
Embodiment one
Referring to Fig.1 and 2, the present embodiment provides a kind of generator power circuit of more MOS wired in parallel, suitable for doctor
With the size of current that balanced metal-oxide-semiconductor power model in the power circuit of high pressure generator, can be realized, the compatibility to metal-oxide-semiconductor is improved
Property.
The generator power circuit of the present embodiment includes the first circuit 1 and second circuit 2 of mirror image each other, and resonance electricity
Road 3 and load 4；
First circuit 1 includes the first drive circuit 11, the first metal-oxide-semiconductor power model 12 and the first resonant inductance 13；
Second circuit 2 includes the second drive circuit 21, the second metal-oxide-semiconductor power model 22 and the second resonant inductance 23；
It is connected after the parallel connection of first resonant inductance, 13 and second resonant inductance 23 with the input of the resonance circuit 3,
The output end of the resonance circuit 3 is connected with the load 4.
Specifically, due to the first circuit 1 and second circuit 2 mirror image each other because the structure composition of the two, annexation,
Act on completely the same, be described in detail herein by taking the first circuit as an example, second circuit is not repeated.
First drive circuit receives Pulse1 (the first pulse) and Pulse2 (the second pulse) from outside MCU controls
After signal, by its internal transformer T1 carry out isolation amplification output four road PFM1, PFM2, PFM3, PFM4 tetra- road drive arteries and veins
Punching, wherein PFM1 and PFM4 same-phases, PFM2 and PFM3 same-phases are realized complementary；Four road signals are respectively outputted to rear class first
Four-way switch pipe Q1, Q2, Q3, Q4 of metal-oxide-semiconductor power model, for driving four road metal-oxide-semiconductors；
First metal-oxide-semiconductor power model is carried out according to four road drive signal alternate conductions of the first drive circuit to DC+, DC-
Inversion, the AC signal after inversion are output to the first resonant inductance；
First resonant inductance cooperation rear class resonance circuit forms LLC resonators and the first metal-oxide-semiconductor power model is exported together
AC signal carry out frequency-selecting, frequency is more remote from resonant frequency, and the impedance of resonator is bigger；
Second resonant inductance cooperation prime resonance circuit forms LLC resonators and the second metal-oxide-semiconductor power model is exported together
AC signal carry out frequency-selecting, frequency is more remote from resonant frequency, and the impedance of resonator is bigger；
Ohmic load acts on for whole circuit supplies load.
The generator power circuit of the present embodiment uses VFC in the course of the work, by the first resonant inductance L1,
Second resonant inductance L2, the resonance of resonance circuit, it is typically to close two in conventional circuit to be operated in Sofe Switch state, L1 and L2
For one, two inductance in parallel, L1 inductance value and the L2 consistent size of inductance value requirement are divided into the present embodiment, by
It is identical to the rejection ability of curent change in identical inductances, when the first metal-oxide-semiconductor power model and the second metal-oxide-semiconductor power model occur
During size of current deviation, L1 and L2 can limit the climbing speed of electric current, the size of current of balanced two metal-oxide-semiconductor power models,
After metal-oxide-semiconductor power model is fully on, due to the positive temperature coefficient of metal-oxide-semiconductor, can automatic current equalizing, the inductance L3 in resonance circuit
Equivalent into transformer load with ohmic load R1, L3 is equivalent to the leakage inductance of transformer, and R1 is equivalent into transformer actual loading.
Embodiment two
Fig. 1 and 2 is refer to, the present embodiment corresponds to embodiment one, there is provided a kind of particular circuit configurations example.
Circuit element connected mode is as follows：
First drive circuit includes the first transformer T1, and the first transformer T1 first end provides with external MCU control terminals
Pulse1 ends, the second transformer T2 first end connection, what the first transformer T1 the second end and external MCU control terminals provided
The second end connection at Pulse2 ends, the second transformer T2 is connected, the first transformer T1 the 3rd end and the first metal-oxide-semiconductor Q1 grid
Connection, the first transformer T1 the 5th end are connected with the 4th metal-oxide-semiconductor Q4 grid, the first transformer T1 the 8th end and second
Metal-oxide-semiconductor Q2 grid connection, the first transformer T1 the tenth end is connected with the 3rd metal-oxide-semiconductor Q3 grid.
Second drive circuit includes the second transformer T2, and the second transformer T2 first end provides with external MCU control terminals
Pulse1 ends, the second transformer T1 first end connection, what the second transformer T2 the second end and external MCU control terminals provided
The second end connection at Pulse2 ends, the first transformer T1 is connected, and the second transformer T2 the 3rd end connects with the grid of the 5th metal-oxide-semiconductor
Connect, the second transformer T2 the 5th end is connected with the 8th metal-oxide-semiconductor Q8 grid, the second transformer T2 the 8th end and the 6th MOS
Pipe Q6 grid connection, the second transformer T2 the tenth end is connected with the 7th metal-oxide-semiconductor Q7 grid.
First metal-oxide-semiconductor power model includes the first capacitor C1, the first metal-oxide-semiconductor Q1, the second metal-oxide-semiconductor Q2, the 3rd metal-oxide-semiconductor Q3
And the 4th metal-oxide-semiconductor Q4；First capacitor C1 first end (anode) drain electrode with the first metal-oxide-semiconductor Q1, the second metal-oxide-semiconductor Q2 respectively
Drain electrode connection；Second end (negative electrode) is connected with the 3rd metal-oxide-semiconductor Q3 source electrode and the 4th metal-oxide-semiconductor Q4 source electrode respectively；First MOS
Pipe Q1 grid is connected with the first transformer T1 of the first drive circuit the 3rd end (PFM1), the second end (drain electrode) and the first electricity
The drain electrode connection of container C1 first end, the second metal-oxide-semiconductor Q2, the 3rd end (source electrode) and the 3rd metal-oxide-semiconductor Q3 drain electrode, ohmic load
First resistor R1 the second end connection；The 8th of second metal-oxide-semiconductor Q2 grid and the first transformer T1 of the first drive circuit
(PFM2) connection is held, the second end (drain electrode) is connected with the drain electrode of the first capacitor C1 first end, the first metal-oxide-semiconductor Q1, the 3rd end
(source electrode) and the 4th metal-oxide-semiconductor Q4 drain electrode, the first end of the first inductance L1 in the first resonant inductance are connected；3rd metal-oxide-semiconductor Q3
Grid be connected with the first transformer T1 of the first drive circuit the tenth end (PFM3), the second end (drain electrode) and the first metal-oxide-semiconductor
The second end connection of Q1 source electrode, the first resistor R1 of ohmic load, the 3rd end (source electrode) and the first electric capacity C1 the second end, the
Four metal-oxide-semiconductor Q4 source electrode connection；5th end of the 4th metal-oxide-semiconductor Q4 grid and the first transformer T1 of the first drive circuit
(PFM4) connect, the first inductance L1 of the second end (drain electrode) with the second metal-oxide-semiconductor Q2 source electrode, in the first resonant inductance first end
Connection, the 3rd end (source electrode) is connected with the first capacitor C1 the second end, the 3rd metal-oxide-semiconductor Q3 source electrode.
Second metal-oxide-semiconductor power model includes the 3rd capacitor C3, the 5th metal-oxide-semiconductor Q5, the 6th metal-oxide-semiconductor Q6, the 7th metal-oxide-semiconductor
Q7, the 8th metal-oxide-semiconductor Q8；3rd capacitor C3 first end is connected with the 5th metal-oxide-semiconductor Q5 drain electrode, the 6th metal-oxide-semiconductor Q6 drain electrode,
Second end is connected with the 7th metal-oxide-semiconductor Q7 source electrode, the 8th metal-oxide-semiconductor Q8 source electrode；5th metal-oxide-semiconductor Q5 grid and the second driving electricity
The second transformer T2 on road the 3rd end (PFM5) connection, the second end (drain electrode) and the 3rd capacitor C3 first end, the 6th MOS
Pipe Q6 drain electrode connection, the 3rd end (source electrode) and the 7th metal-oxide-semiconductor Q7 drain electrode, the first resistor R1 of ohmic load the second end connect
Connect；6th metal-oxide-semiconductor Q6 grid is connected with the second transformer T2 of the second drive circuit the 8th end (PFM6), (leakage of the second end
Pole) it is connected with the drain electrode of the 3rd capacitor C3 first end, the 5th metal-oxide-semiconductor Q5, the 3rd end (source electrode) and the 8th metal-oxide-semiconductor Q8 leakage
The first end connection of the 3rd inductance L3 in pole, the second resonant inductance；7th metal-oxide-semiconductor Q7 grid and the of the second drive circuit
Two transformer T2 the tenth end (PFM7) connection, the second end (drain electrode) and the 5th metal-oxide-semiconductor Q5 source electrode, the first electricity of ohmic load
R1 the second end connection is hindered, the 3rd end (source electrode) is connected with the 3rd electric capacity C3 the second end, the 8th metal-oxide-semiconductor Q8 source electrode；8th
Metal-oxide-semiconductor Q8 grid is connected with the 5th end (PFM8) of the second transformer of the second drive circuit, the second end (drain electrode) and the 6th
The first end connection of the 3rd inductance L3 in metal-oxide-semiconductor Q6 source electrode, the second resonant inductance, the 3rd end (source electrode) and the 3rd capacitor
C3 the second end, the 7th metal-oxide-semiconductor Q7 source electrode connection.
First resonant inductance includes the first inductance L1, and the of the first inductance L1 first end and the first metal-oxide-semiconductor power model
The source electrode of two metal-oxide-semiconductors, the first metal-oxide-semiconductor power model the 4th metal-oxide-semiconductor drain electrode connection, the second electricity of the second end and resonance circuit
The second end connection of appearance C2 first end, the 3rd inductance L3 in the second resonant inductance.
Second resonant inductance includes the 3rd inductance L3, and the of the 3rd inductance L3 first end and the second metal-oxide-semiconductor power model
The source electrode of six metal-oxide-semiconductors, the second metal-oxide-semiconductor power model the 8th metal-oxide-semiconductor drain electrode connection, the second electricity of the second end and resonance circuit
The second end connection of appearance C2 first end, the first inductance L1 of the first resonant inductance.
Resonance circuit includes the second capacitor C2 and the second inductance L2；Second capacitor C2 first end and the first resonance electricity
First inductance L1 of sense the second end, the 3rd inductance L3 of the second resonant inductance the second end connection, the second end and the second inductance
L2 first end connection；Second inductance L2 first end is connected with the second capacitor C2 the second end, the second end and ohmic load 8
First resistor R1 first end connection.
Ohmic load includes first resistor R1；The second of first resistor R1 first end and the second inductance L2 of resonance circuit
First metal-oxide-semiconductor Q1 of end connection, the second end and the first metal-oxide-semiconductor power model source electrode, the 3rd of the first metal-oxide-semiconductor power model the
Metal-oxide-semiconductor Q3 drain electrode, the second metal-oxide-semiconductor power model the 5th metal-oxide-semiconductor Q5 source electrode, the 7th MOS of the second metal-oxide-semiconductor power model
Pipe Q7 drain electrode connection.
The operation principle of foregoing circuit is：
Because the structure composition of the first circuit and second circuit, annexation and effect are identical, stated herein in order to repeat to tire out,
Only illustrated with the first circuit：
The first drive circuit in first circuit is used for the Pulse signals for receiving outside MCU controls output, and by Pulse
Signal by exporting four tetra- road driving pulses of road PFM1, PFM2, PFM3, PFM4 after transformer T1 isolation amplifications, wherein PFM1 and
PFM4 same-phases, PFM2 and PFM3 same-phases, four road PFM pulses be respectively outputted to rear class the first metal-oxide-semiconductor power model Q1,
Q2, Q3, Q4, for driving four road metal-oxide-semiconductors.
Four road driving pulse PFM1, PFM2s of the first metal-oxide-semiconductor power model receiving from the first drive module,
PFM3, PFM4, wherein driving pulse PFM1 and PFM4 same-phases, PFM1 realize complementation with PFM2 antiphases, work as driving pulse
When PFM1 and PFM4 is high level, PFM2 and PFM3 are low level, each metal-oxide-semiconductor high level conducting, now metal-oxide-semiconductor Q1 and MOS
Pipe Q4 is turned on, metal-oxide-semiconductor Q2 and metal-oxide-semiconductor Q3 cut-offs, electric current from the first electric capacity C1 positive poles by metal-oxide-semiconductor Q1 to resistance R1, then to humorous
Shake the second inductance L2 of circuit, again passes through its second electric capacity C2, again passes through the first inductance L1 of the first resonant inductance, then passes through
Metal-oxide-semiconductor Q4 to electric capacity C1 negative poles DC-；
When driving pulse PFM1 and PFM4 are low level, when PFM2 and PFM3 are high level, each metal-oxide-semiconductor high level is led
Logical, now metal-oxide-semiconductor Q2 and metal-oxide-semiconductor Q3 conductings, metal-oxide-semiconductor Q1 and metal-oxide-semiconductor Q4 cut-offs, electric current pass through MOS from the first electric capacity C1 positive poles
Pipe Q2 is to the first inductance L1, then to the second electric capacity C2, then by the second inductance L2, by resistance R1, by metal-oxide-semiconductor Q3 to the
One electric capacity C1 negative poles DC-, such inverse metamorphism exports into alternating current, wherein the first inductance L1, the second electric capacity C2, the second inductance L2
It is collectively forming LLC resonance circuits；
After the first resonant inductance L1 receives the AC signal from the first metal-oxide-semiconductor power model, with rear class resonance
Circuit connected in series carries out frequency-selecting control；
After the resonance circuit receives the AC signal from the first resonant inductance L1, connected with prime resonant inductance, shape
Into LLC resonance circuits, resonance circuit has different hindrance functions to the current signal of different frequency, and frequency distance resonance point is got over
Far, impedance is bigger, and the size of current that current signal is output to rear class ohmic load is adjusted by this effect.
The ohmic load is used to act on for circuit supplies load；
Second drive module receives pulse signal Pulse1 and the Pulse2 signal from MCU controls, effect and the
One drive module is identical；
Four road driving pulse PFM5, PFM6s of the second metal-oxide-semiconductor power model reception from the second drive module,
PFM7, PFM8, effect are identical with the effect of the first MOS power models；
After 3rd inductance L3 of second resonant inductance receives the AC signal from the second metal-oxide-semiconductor power model,
It is identical with the effect of the first resonant inductance L1.
In summary, the generator power circuit of a kind of more MOS wired in parallel provided by the invention, not only can guarantee that and flows through
The electric current of two metal-oxide-semiconductor power models in parallel is consistent；And it is simple and easy, cost is cheap, circuit structure is simple；Further
, moreover it is possible to the compatibility to metal-oxide-semiconductor is significantly improved, extends the life-span of metal-oxide-semiconductor, while ensures the safe to use of metal-oxide-semiconductor.
Embodiments of the invention are the foregoing is only, are not intended to limit the scope of the invention, it is every to utilize this hair
The equivalents that bright specification and accompanying drawing content are made, or the technical field of correlation is directly or indirectly used in, similarly include
In the scope of patent protection of the present invention.
Claims (5)
1. a kind of generator power circuit of more MOS wired in parallel, it is characterised in that the first circuit including mirror image each other and
Two circuits, and resonance circuit and load；
First circuit and second circuit include drive circuit, metal-oxide-semiconductor power model and the resonant inductance being sequentially connected respectively；
It is connected after the resonant inductance parallel connection of first circuit and second circuit with the input of the resonance circuit, the resonance
The output end of circuit connects with the load；
The drive circuit, for the pulse signal received after isolation is amplified, to be exported to the metal-oxide-semiconductor power mould
Block；
The metal-oxide-semiconductor power model, for the frequency according to the drive circuit, the arteries and veins carried out after isolation amplification that will receive
Rush drive signal and carry out high-frequency inversion, exported after forming high-frequency ac pulse signal to resonant inductance；
Two resonant inductances of the first circuit and second circuit, for suppressing to the high-frequency ac pulse signal flowed through, make
The value of the high-frequency ac pulse signal of two resonant inductance output is consistent；
Two resonant inductances of the resonance circuit and the first circuit and second circuit form LLC resonance circuits, the LLC resonance
Circuit is used to carry out frequency-selecting control to the high-frequency ac pulse signal according to the frequency of the drive circuit, exports corresponding electricity
Stream as low as loads greatly.
2. a kind of generator power circuit of more MOS wired in parallel as claimed in claim 1, it is characterised in that also include
MCU；Input of the output end of the MCU respectively with the first circuit and the drive circuit of second circuit is connected；
The MCU, for output pulse signal to drive circuit.
A kind of 3. generator power circuit of more MOS wired in parallel as claimed in claim 1, it is characterised in that the driving
Circuit includes four road driving pulse outputs；The metal-oxide-semiconductor power model includes four road metal-oxide-semiconductors；
Four road driving pulse output connections corresponding with four road metal-oxide-semiconductors of the metal-oxide-semiconductor power model respectively of the drive circuit.
A kind of 4. generator power circuit of more MOS wired in parallel as claimed in claim 3, it is characterised in that four tunnel
Driving pulse output is followed successively by the road driving pulse of PFM1, PFM2, PFM3, PFM4 tetra-；PFM1 the and PFM4 same-phases, PFM2 and
PFM3 same-phases.
A kind of 5. generator power circuit of more MOS wired in parallel as claimed in claim 4, it is characterised in that the metal-oxide-semiconductor
Four road metal-oxide-semiconductors of power model are the first metal-oxide-semiconductor Q1, the second metal-oxide-semiconductor Q2, the 3rd metal-oxide-semiconductor Q3, the 4th metal-oxide-semiconductor Q4；
The metal-oxide-semiconductor power model also includes the first capacitor C1；The load is resistance R1；
The drain electrode with the first metal-oxide-semiconductor Q1, the second metal-oxide-semiconductor Q2 drain electrode are connected the anode of the first capacitor C1 respectively, negative electrode
The source electrode with the 3rd metal-oxide-semiconductor Q3, the 4th metal-oxide-semiconductor Q4 source electrode are connected respectively；First metal-oxide-semiconductor Q1 grid connects with the PFM1
Connect, the second metal-oxide-semiconductor Q2 grid is connected with the PFM2, and the 3rd metal-oxide-semiconductor Q3 grid is connected with the PFM3, the 4th metal-oxide-semiconductor
Q4 grid is connected with the PFM4；The source electrode of the first metal-oxide-semiconductor Q1 be connected with the drain electrode of the 3rd metal-oxide-semiconductor Q3 after with electricity
Hinder R1 one end connection；The source electrode of the second metal-oxide-semiconductor Q2 with after the drain electrode connection of the 4th metal-oxide-semiconductor Q4 with the first circuit
Resonance circuit connects.
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| CN201710701341.5A CN107395038B (en) | 2017-08-16 | 2017-08-16 | A kind of generator power circuit of more MOS wired in parallel |
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| CN201710701341.5A CN107395038B (en) | 2017-08-16 | 2017-08-16 | A kind of generator power circuit of more MOS wired in parallel |
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| CN107395038B CN107395038B (en) | 2019-11-12 |
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| JPH09149636A (en) * | 1995-11-20 | 1997-06-06 | Hitachi Ltd | Switching power device |
| WO1998034334A1 (en) * | 1997-01-30 | 1998-08-06 | Siemens Aktiengesellschaft | Device for supplying direct current to an electrical melting unit |
| CN101248576A (en) * | 2006-05-23 | 2008-08-20 | 三菱电机株式会社 | Power conversion device |
| CN104283438A (en) * | 2014-10-11 | 2015-01-14 | 国家电网公司 | Voltage disturbance generator |
| CN204131407U (en) * | 2014-10-21 | 2015-01-28 | 邵阳学院 | The parallel connection of electronic power transformer and control structure |
| CN204559941U (en) * | 2015-03-24 | 2015-08-12 | 威海海泰电子有限公司 | A kind of New LED driving power |
| CN106230288A (en) * | 2016-08-08 | 2016-12-14 | 湖州新智源电子科技有限公司 | A kind of multichannel MPPT Miniature inverter and control method thereof |
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2017
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Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09149636A (en) * | 1995-11-20 | 1997-06-06 | Hitachi Ltd | Switching power device |
| WO1998034334A1 (en) * | 1997-01-30 | 1998-08-06 | Siemens Aktiengesellschaft | Device for supplying direct current to an electrical melting unit |
| CN101248576A (en) * | 2006-05-23 | 2008-08-20 | 三菱电机株式会社 | Power conversion device |
| CN104283438A (en) * | 2014-10-11 | 2015-01-14 | 国家电网公司 | Voltage disturbance generator |
| CN204131407U (en) * | 2014-10-21 | 2015-01-28 | 邵阳学院 | The parallel connection of electronic power transformer and control structure |
| CN204559941U (en) * | 2015-03-24 | 2015-08-12 | 威海海泰电子有限公司 | A kind of New LED driving power |
| CN106230288A (en) * | 2016-08-08 | 2016-12-14 | 湖州新智源电子科技有限公司 | A kind of multichannel MPPT Miniature inverter and control method thereof |
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|---|---|
| CN107395038B (en) | 2019-11-12 |
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