CN107393820B - surface passivation solution and application thereof in surface passivation of cadmium manganese telluride crystals - Google Patents

surface passivation solution and application thereof in surface passivation of cadmium manganese telluride crystals Download PDF

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CN107393820B
CN107393820B CN201710414294.6A CN201710414294A CN107393820B CN 107393820 B CN107393820 B CN 107393820B CN 201710414294 A CN201710414294 A CN 201710414294A CN 107393820 B CN107393820 B CN 107393820B
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passivation
cadmium
crystal
cmt
surface passivation
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CN107393820A (en
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俞鹏飞
李辉
陈永仁
宋婕
王钰
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Changan University
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Changan University
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation

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  • Condensed Matter Physics & Semiconductors (AREA)
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Abstract

The invention relates to a surface passivation solution and application thereof in surface passivation of a cadmium manganese telluride crystal. The passivation solution is potassium persulfate passivation solution with the mass percentage content of 1% -5%, namely the mass ratio of potassium persulfate to deionized water is 1: 99-5: 95, when the passivation solution is applied, a tellurium-manganese-cadmium wafer with gold electrodes plated on two sides by a chemical method is placed into the prepared passivation solution for passivation for 1-20min, then the wafer is cleaned by deionized water, and finally the wafer is dried by nitrogen gas to obtain the tellurium-manganese-cadmium crystal with the passivated surface. The passivation process and operation of the invention are simple, the cost is low, and a high-resistance oxide layer can be formed on the surface of the tellurium-manganese-cadmium crystal after passivation, thereby effectively reducing the leakage current and improving the performance of the detector.

Description

Surface passivation solution and application thereof in surface passivation of cadmium manganese telluride crystals
Technical Field
The invention belongs to the technical field of compound semiconductor material manufacturing, and relates to a surface passivation solution and application thereof in surface passivation of a cadmium manganese telluride crystal.
Background
the tellurium-manganese-Cadmium (CMT) crystal has the advantages of high average atomic number, large forbidden bandwidth, high resistivity, long carrier mobility and service life, and the like, and a detector made of the crystal has the advantages of large absorption coefficient, large counting rate, small volume, convenience in use and capability of working at room temperature, thereby becoming the development key point of the current nuclear radiation detector material. The electronic band structure and semiconductor properties of CMT are very similar to those of cadmium zinc telluride and perform more excellently in some respects: such as Mn2+Ions can increase the forbidden bandwidth of CMT more quickly, the segregation coefficient of Mn is close to 1, the component distribution of the CMT crystal in a growth state is more uniform, and the like. The CMT detector can be widely applied to the fields of medical imaging, environmental protection, industrial monitoring, nuclear safety detection, contraband inspection, physical study of celestial bodies and the like. However, the leakage current on the CMT surface can cause the detector to be not resistant to high voltage, cause background noise, and cause the product of energy resolution and carrier mobility life of the device to be reduced, thereby influencing the device as a room temperature radiation detectorapplication is carried out. Therefore, effective measures need to be taken to passivate the CMT detector surface to reduce leakage current.
surface defects of compound semiconductors are a major cause of surface leakage current. The CMT crystal can form a Te-rich layer on the surface while removing damage caused by mechanical polishing through chemical corrosion, so that the surface resistivity is reduced, and the surface leakage current is increased. While high performance room temperature radiation detectors require extremely low leakage currents. Therefore, a proper passivation method must be adopted to improve the surface property of the CMT crystal, i.e., a high-resistance oxide layer is formed to reduce the leakage current of the detector and improve the performance of the detector. The wet chemical passivation method is a commonly used semiconductor surface treatment method and has the advantages of simple process and operation, low cost and good effect. The wet chemical passivation method is mainly to form a film of sulfide or oxide on the surface. For Passivation of CMT, Kim et al (Effective Surface Passivation of CdMnTe Materials, Journal of electronic Materials,39(2010)1015-1018) employs (NH)4)2and the S solution is used for vulcanizing the CMT, so that the leakage current is reduced. The disadvantage is that the process requires heating, which introduces new defects in the CMT crystal. The oxidation is carried out by using two or more reagents, e.g. NH4F and H2O2the aqueous solutions of (2) have the disadvantage that a plurality of reagents are required and the pH is to be adjusted. Currently, there is less research on the surface passivation of CMT crystals. Therefore, it is necessary to invent a passivation method for forming a high-resistance oxide layer with simple process and good effect.
Disclosure of Invention
aiming at the defects and shortcomings in the prior art, the invention aims to provide the surface passivation solution and the application thereof in the surface passivation of the cadmium manganese telluride crystal.
In order to achieve the purpose, the technical scheme of the invention is as follows:
The surface passivation solution is characterized in that a passivator of the surface passivation solution is potassium persulfate.
specifically, the mass percentage of the potassium persulfate in the surface passivation solution is 1-5%.
The surface passivation solution comprises potassium persulfate and water, wherein the mass ratio of the potassium persulfate to the water is 1: 99-5: 95.
The surface passivation solution is used for the surface passivation of the crystal of the room-temperature radiation detector.
The surface passivation solution is used for surface passivation of the cadmium manganese telluride crystal.
The method is specifically applied to surface treatment of the cadmium manganese telluride crystal in a surface passivation solution with mass percentage for 1-20 min.
Preferably, the tellurium-manganese-cadmium crystal is subjected to surface treatment for 5min in a surface passivation solution with the mass percentage of 5%.
Preferably, the tellurium-manganese-cadmium crystal is subjected to surface treatment for 20min in a surface passivation solution with the mass percentage of 1%.
In addition, the cadmium telluride is prepared by plating electrodes on two sides by a chemical method.
Compared with the prior art, the method has the following advantages:
The surface passivation solution only needs one passivation reagent, and has simple process and obvious effect; no need of heating or pH value regulation, and mild treatment condition. The current-voltage (I-V) test result shows that the method can obviously reduce the surface leakage current of the device. For the CMT crystal before and after passivation, when the applied bias is 100V, the leakage current of the surface of the CMT crystal after passivation by adopting the passivation method of the invention is reduced by about one order of magnitude at most compared with the current of the surface of the CMT crystal before passivation. The invention is not only suitable for CMT crystal, but also can be used for surface passivation treatment of cadmium telluride and cadmium zinc telluride crystal.
Drawings
FIG. 1 shows the I-V test results of CMT crystals before and after passivation in example 1;
FIG. 2 shows the I-V test results of CMT crystals before and after passivation in example 2;
FIG. 3 is a comparison of I-V test results for CMT crystals before and after passivation with different passivating agents;
The invention is described in detail below with reference to the drawings and the detailed description.
Detailed Description
A method for passivating the surface of a CMT crystal for a room-temperature radiation detector comprises the following steps:
(1) preparing a passivation solution: weighing a certain amount of potassium persulfate, pouring the potassium persulfate into a beaker filled with deionized water, and magnetically stirring at room temperature to completely dissolve the potassium persulfate to obtain passivation solution with the concentration of 1% -5%, wherein the mass ratio of the potassium persulfate to the deionized water in the passivation solution is 1: 99-5: 95;
(2) surface passivation: chemically gold-plated on both sides of a CMT wafer (size 10X 2 mm)3) Putting into the potassium persulfate passivation solution for surface treatment for 1-20 min;
(3) Cleaning and drying the wafer: taking out the passivated CMT wafer, putting the passivated CMT wafer into deionized water, cleaning for 2-3 times to remove various ions remained on the surface, and then drying by using nitrogen to obtain the surface passivated CMT wafer;
In fact, the surface passivation solution of the present invention is not limited to the surface passivation of the CMT crystal, and the surface passivation solution of the present invention can be used for the surface passivation of other crystals used in a room temperature radiation detector such as CZT crystal (cadmium zinc telluride crystal).
The invention will be further illustrated with reference to specific examples.
Example 1:
And cleaning a beaker for preparing the passivation solution with deionized water, weighing 5g of potassium persulfate according to the mass ratio of 5:95 of the potassium persulfate to the deionized water, pouring the potassium persulfate into the beaker filled with 95g of the deionized water, and magnetically stirring at room temperature to completely dissolve the potassium persulfate to obtain the passivation solution with the concentration of 5%. Chemically gold-plated on both sides of a CMT wafer (size 10X 2 mm)3) Putting into the prepared passivation solution for surface passivation for 1min, 2min and 5 min; taking out the passivated CMT wafer, putting the wafer into deionized water for cleaning for 3 times to remove various ions remained on the surface, then blowing the wafer to dry by nitrogen, and finally obtaining the passivated CMT waferTo surface passivated CMT wafers.
Example 2:
and cleaning a beaker for preparing the passivation solution with deionized water, weighing 1g of potassium persulfate according to the mass ratio of 1:99 of the potassium persulfate to the deionized water, pouring the potassium persulfate into the beaker filled with 99g of the deionized water, and magnetically stirring at room temperature to completely dissolve the potassium persulfate to obtain the passivation solution with the concentration of 1%. Chemically gold-plated on both sides of a CMT wafer (size 10X 2 mm)3) Putting into the prepared passivation solution for surface passivation for 5min, 10min and 20 min; and taking out the passivated CMT wafer, putting the passivated CMT wafer into deionized water, cleaning for 3 times to remove various ions remained on the surface, and then drying the wafer by using nitrogen to obtain the surface passivated CMT wafer.
The CMT wafer after the passivation treatment was fabricated into a detector, and the surfaces of the CMT wafer before and after the passivation were subjected to I-V tests using a semiconductor parameter analyzer of Agilent corporation, respectively, and the test results are shown in fig. 1 and 2. As can be seen from fig. 1 and 2, when the applied bias voltage is 100V, the leakage current of the surface of the CMT wafer after passivation and passivation was compared, and it was found that the surface current after passivation with 5% potassium persulfate for 1min and after passivation with 1% potassium persulfate for 5min was reduced by about 60% and 50%, respectively, relative to the surface current before passivation, indicating that the passivation effect was significant. As the passivation time is prolonged, the leakage current of the CMT wafer surface is gradually reduced, and the surface current is reduced by about one order of magnitude at most after passivation relative to that before passivation, namely 5% potassium persulfate passivation for 5min and 1% potassium persulfate passivation for 20min can achieve the best passivation effect. The test analysis also shows that an oxide layer with strong adhesive force is formed on the surface of the wafer, and the surface is smooth. The energy resolution of the detector is obviously improved, and the detector can still work normally when the bias voltage of 1000V is applied.
In addition, the inventors also conducted a test comparing the passivation effect of the passivation solution in example 1 with that of hydrogen peroxide and ammonium sulfide under the same configuration method (refer to example 1), and as can be seen from fig. 3, the best passivation effect is potassium persulfate for different passivators with the same concentration in the same time. Therefore, the invention is a passivation method with remarkable effect and has wide application prospect.
The above examples are intended to illustrate the invention and not to limit it, and modifications and improvements of the method of the invention made by a person skilled in the art are considered to be within the scope of the invention as defined by the claims.

Claims (1)

1. the surface passivation solution is characterized by comprising potassium persulfate and water, wherein the mass ratio of the potassium persulfate to the water is 1: 99-5: 95;
The surface passivation solution is used for surface passivation of the cadmium manganese telluride crystal;
Performing surface treatment on the tellurium-manganese-cadmium crystal in a surface passivation solution for 5-20 min;
The cadmium telluride manganese crystal is a cadmium telluride manganese crystal with gold-plated electrodes on two sides by a chemical method.
CN201710414294.6A 2017-06-05 2017-06-05 surface passivation solution and application thereof in surface passivation of cadmium manganese telluride crystals Expired - Fee Related CN107393820B (en)

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101525747A (en) * 2009-04-17 2009-09-09 昆明理工大学 Clean rare-earth salt passivation solution
CN101525748A (en) * 2009-04-17 2009-09-09 昆明理工大学 Clean rare-earth salt passive film
CN102856432A (en) * 2012-08-12 2013-01-02 安阳市凤凰光伏科技有限公司 Surface passivation method of silicon chip
CN103205742A (en) * 2013-04-09 2013-07-17 海宁市科泰克金属表面技术有限公司 Chromate-free passivator for zinc coating
CN103861740A (en) * 2014-03-25 2014-06-18 中南大学 Method for flotation separation of copper sulfide and lead concentrate processed through pre-oxidation
CN104795321A (en) * 2015-03-02 2015-07-22 京东方科技集团股份有限公司 Method for overcoming surface defect of polycrystalline silicon

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101525747A (en) * 2009-04-17 2009-09-09 昆明理工大学 Clean rare-earth salt passivation solution
CN101525748A (en) * 2009-04-17 2009-09-09 昆明理工大学 Clean rare-earth salt passive film
CN102856432A (en) * 2012-08-12 2013-01-02 安阳市凤凰光伏科技有限公司 Surface passivation method of silicon chip
CN103205742A (en) * 2013-04-09 2013-07-17 海宁市科泰克金属表面技术有限公司 Chromate-free passivator for zinc coating
CN103861740A (en) * 2014-03-25 2014-06-18 中南大学 Method for flotation separation of copper sulfide and lead concentrate processed through pre-oxidation
CN104795321A (en) * 2015-03-02 2015-07-22 京东方科技集团股份有限公司 Method for overcoming surface defect of polycrystalline silicon

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