CN1073741C - Insulator with local-conducting glaze - Google Patents
Insulator with local-conducting glaze Download PDFInfo
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- CN1073741C CN1073741C CN96101363A CN96101363A CN1073741C CN 1073741 C CN1073741 C CN 1073741C CN 96101363 A CN96101363 A CN 96101363A CN 96101363 A CN96101363 A CN 96101363A CN 1073741 C CN1073741 C CN 1073741C
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- glaze layer
- insulator
- sheet resistance
- semiconducting
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Abstract
To provide a partial conductive-glazed insulator capable of sufficiently preventing the occurrence of a corona discharge or RIV under severe operating conditions. A pin metal 21 and a cap metal 22 are connected to a insulator main body 11 made of glazed porcelain serving as an insulation section via Portland cement 18. Conductive glaze layers 19, 20 are formed in the boundary region between the insulating glaze layer 15 of the insulator main body 11 and the Portland cement 18. The conductive glaze layers 19, 20 are made gradually thinner toward a shade section 12 side. The surface resistance of the conductive-glaze layers 19, 20 is within the range of 100-800M&Omega on the pin side 19 and to the range of 20-1000M&Omega on the cap side 20.
Description
The present invention relates on the insulating surface of insulator main body and the borderline region between the cement material, be provided with the band local-conducting glaze insulator of semiconducting glaze layer (enamel layer) with conductivity.
For example, the stitch connector of its charged side of hanging type insulator and the cap connector of ground connection side combine by the cement material on two sides inside and outside the glazing porcelain system insulation division, mutually insulated between these two connectors.For example because of the difference of sheet resistance etc., the borderline region when charged between this each member causes electric field to be concentrated to above-mentioned each member.In this case, when the concentrated electric field that produces has surpassed the dielectric strength of air.Owing to corona discharge takes place the minor insulation destruction of air, produce radio interference voltage (RIV).
For preventing to produce this corona discharge or RIV, known have a kind ofly be coated with last layer has mixed the conduction glaze of metal oxide such as iron oxide for example in general enamel band local-conducting glaze insulator in that borderline region that electric field concentrates takes place easily.The sheet resistance value of this semiconducting glaze layer is generally below 100M Ω.For example, on the hanging type insulator of USP3243505 communique, on insulating surface that the concentrated insulator main body of electric field takes place easily and the borderline region between the cement material, form the semiconducting glaze layer that constitutes by blue ferrous oxide.The sheet resistance value scope of this semiconducting glaze layer is 0.2～20M Ω.And, constitute the structure that makes the concentrated mitigation of electric field and prevent corona discharge or RIV by this semiconducting glaze layer.
For example, when transmission voltage was high pressure, the voltage that insulator is shared uprised, and concentrated at the electric field of the borderline region of each constituent material of insulator to strengthen.And under the environment that is easy to discharge in high altitude localities etc., also can produce corona discharge or RIV even slight electric field is concentrated.Yet, under this harsh service condition,, exist electric field to concentrate to can not get relaxing and produce the problem of corona discharge or RIV because the alleviation effects that electric field is concentrated on existing band local-conducting glaze insulator is abundant inadequately.
Even the purpose of this invention is to provide a kind of band local-conducting glaze insulator that under harsh service condition, also can prevent to produce corona discharge or RIV fully.
For achieving the above object, in the invention of claim 1, the sheet resistance of charged side semiconducting glaze layer is set at 100～800M Ω, and the sheet resistance of ground connection side semiconducting glaze layer is set at 20～1000M Ω.
In the invention of claim 2,, and make this sheet resistance smooth variation for the sheet resistance that makes above-mentioned each semiconducting glaze layer produces high low head between the insulating surface of insulator main body and cement material.
In the invention of claim 3, make above-mentioned sheet resistance high more, low more the closer to the cement material side the closer to the insulating surface side.
If the invention according to claim 1 is implemented, the corona that then can improve band local-conducting glaze insulator is eliminated the scope of voltage level.Therefore, can reach high voltage level and corona discharge can not take place, still can tolerate even stronger electric field is concentrated.
If implement according to the invention of claim 2, the high low head of sheet resistance that then can make the insulating surface of the insulator main body that easy generation electric field concentrates and the borderline region between the cement material is by the semiconducting glaze layer and smooth variation.
If implement according to the invention of claim 3, the insulating surface from the relatively low cement material side of sheet resistance to higher insulator main body, sheet resistance distributes along its high low tendency.Therefore, the drop of the insulating surface of insulator main body and the sheet resistance of cement material becomes milder, and electric field is concentrated and relaxed.
Fig. 1 is the partial cross-sectional front view of an embodiment of expression band local-conducting glaze insulator of the present invention.
Fig. 2 is the local amplification profile diagram of presentation graphs 1 major part.
Fig. 3 is the sheet resistance of semiconducting glaze layer and the graph of relation that corona is eliminated voltage level.
Fig. 4 is the graph of relation of semiconducting glaze layer thickness and sheet resistance.
Fig. 5 is near the schematic diagram of the sheet resistance the expression semiconducting glaze layer.
Symbol description:
11-insulator main body, 15-as the insulation glaze layer of insulating surface, 18-as the portland cement of cement material, 19-as the stitch side semiconducting glaze layer of charged side semiconducting glaze layer, 20-as the cap side semiconducting glaze layer of ground connection side semiconducting glaze layer, 21-as the stitch connector of charged side connector, 22-cap connector as ground connection side connector.
Below, the embodiment that has specialized with regard to relevant hanging type insulator (hereinafter referred to as band local-conducting glaze insulator) illustrates the present invention with reference to the accompanying drawings.
As shown in Figure 1, whole formation is annular and is many corrugated parts 13 of circular concentric on the medial surface of the umbrella portion 12 of insulator main body 11.Be formed with the cylindrical shape head 14 of lid in the central upper integral body of above-mentioned umbrella portion 12.And all surfaces of this insulator main body 11 is coated with last layer with silica with insulating properties, general enamel (calling the insulation glaze in the following text) that aluminium oxide the is main component insulation glaze layer 15 as insulating surface.Ceramics is bonded in constitutes side facing 16 on the outer circumference surface of above-mentioned head 14 and the inner peripheral surface.The cap connector 22 of ground connection side and the stitch connector 21 of charged side are by on the outer surface and inner surface of portland cement 18 in conjunction with the head 14 that is fixed on insulator main body 11.Therefore, cap connector 22 and stitch connector 21 lay respectively at the two ends of insulator main body 11.
Be formed for the chimeric recess 22a of another the band local-conducting glaze insulator stitch connector 21 of bolt directly over being positioned on the top of cap connector 22.The lower end bolt of stitch connector 21 under the chimeric recess 22a of another band local-conducting glaze insulator in.Like this, the band local-conducting glaze insulator use that can a plurality ofly be connected in series.
As shown in Figure 1, 2, on the inner surface and outer surface of insulator main body 11, form the wide semiconducting glaze layer of about 30mm 19,20 at the insulation glaze layer 15 of insulator main body 11 and the borderline region of portland cement 18.Formed this semiconducting glaze layer 19,20 from portland cement 18 sides up to the attenuation gradually of umbrella portion its thickness of 12 sides.This semiconducting glaze layer the 19, the 20th is that semiconduction enamel is coated on the above-mentioned insulation glaze layer 15 of insulator main body 11 and the width, the thickness that reach regulation forms with brush with iron.Above-mentioned iron is that semiconduction enamel is that the iron oxide of interpolation 15wt% in general porcelain uranium is formed, the chromium oxide of 8wt% are made.
In addition, in Fig. 1 and Fig. 2, for ease of understanding, insulation glaze layer 15 and semiconducting glaze layer 19,20 are drawn all thicklyer than reality.
Below, the relation that the sheet resistance value and the corona of semiconducting glaze layer 19,20 are eliminated voltage level describes.
Fig. 3 is illustrated in the curve chart that corona discharge under the condition that makes the sheet resistance value of stitch side semiconducting glaze layer 19 and cap side semiconducting glaze layer 20 among Fig. 1 do various variations is eliminated voltage level.As shown in Figure 3, when the sheet resistance value of cap side semiconducting glaze layer 20 below the 10M Ω or in 1000～5000M Ω scope the time, corona is eliminated voltage level and almost be can't see variation in the gamut of sheet resistance value 1～1000M Ω of stitch side semiconducting glaze layer 19.In contrast, when the sheet resistance value of cap side semiconducting glaze layer 20 in 20～1000M Ω scope, and the sheet resistance value of stitch side semiconducting glaze layer 19 is in the scope of 100～800M Ω the time, with the existing sheet resistance that makes two semiconducting glaze layers 19,20 all the situation below 100M Ω compare, can see having higher corona to eliminate voltage level.That is, can under reaching, prevent corona discharge than the higher voltage level of existing partially conductive enamel insulator owing to the sheet resistance value with stitch side semiconducting glaze layer 19 and cap side semiconducting glaze layer 20 is set in respectively in this scope.In other words, the optimum range of semiconducting glaze layer 19,20 sheet resistance value, the cap side is 20～1000M Ω and the stitch side is 100～800M Ω.Here, when the sheet resistance value of semiconducting glaze layer 19,20 when this optimum range is following, corona discharge takes place in the boundary portion of semiconducting glaze layer 19,20 and insulation glaze layer 15 sometimes.On the other hand, when the sheet resistance value of semiconducting glaze layer 19,20 when this optimum range is above, corona discharge takes place in the boundary portion of semiconducting glaze layer 19,20 and portland cement 18 sometimes.
In addition, as shown in Figure 4, because the semiconducting glaze layer is with brush coating formation, so can see that its sheet resistance value is more or less discrete.But, can see between the thickness and sheet resistance value of semiconducting glaze layer, certain correlation being arranged on its mean value.That is the thick more sheet resistance value of the thickness of semiconducting glaze layer is low more, and thickness thin surface resistance value more is high more.Therefore, the sheet resistance value of semiconducting glaze layer can be by its thickness decision.Here, in the present embodiment, for the sheet resistance value that makes stitch side semiconducting glaze layer 19 and cap side semiconducting glaze layer 20 obtains above-mentioned optimum range, its thickness separately roughly can change in the scope of 0.14～0.23mm and 0.14～0.33mm.
According to the present embodiment that as above constitutes, on insulation glaze layer 15 that the concentrated insulator main body 11 of electric field takes place easily and the borderline region between the portland cement 18, form semiconducting glaze layer 19,20.And the sheet resistance value of stitch side semiconducting glaze layer 19 that makes formation is in 100～800M Ω scope, and the sheet resistance value of cap side semiconducting glaze layer 20 is in 20～1000M Ω scope.And, formed this semiconducting glaze layer 19,20 from portland cement 18 sides up to the little by little attenuation of umbrella portion its thickness of 12 sides.Therefore, as shown in Figure 4, because the thickness of semiconducting glaze layer 19, the 20 high more this relation of thin surface resistance value more, the sheet resistances in each semiconducting glaze layer 19,20 distribute, and little by little uprise up to umbrella portion 12 sides from portland cement 18 sides.
As shown in Figure 5, the sheet resistance value of silicate cement mud layer 18 is generally about 1M Ω, and on the other hand, the sheet resistance value of insulation glaze layer 15 is generally about 10000M Ω.Here, because in the band local-conducting glaze insulator of present embodiment, above-mentioned two- layer 15,16 combine by the semiconducting glaze layer 19,20 that as above constitutes, and the drop of this sheet resistance between two- layer 15,18 is relaxed, and form electric field and concentrate the structure that is relaxed.And, consistent with the high low tendency of above-mentioned two- layer 15,16 sheet resistance, the slope of the sheet resistance in the semiconducting glaze layer 19,20, the stitch side gently changes respectively along proximal line β along proximal line a, cap side in Fig. 5, electric field is concentrated further relaxed.Therefore, can improve the voltage level of band local-conducting glaze insulator generation corona discharge, even under harsh service condition such as electrification in high voltage state or high altitude localities, also can prevent the generation of corona discharge or RIV fully.
And the formation of semiconducting glaze layer 19,20 can only be that semiconduction enamel width, thickness in accordance with regulations is coated on the insulator main body 11 periphery all surfaces above the insulation glaze layer 15 after the glazing with iron, and processing is simple, help making.
In addition, the present invention can also do following change and concrete enforcement.
(1) in Fig. 2, make the varied in thickness of semiconducting glaze layer 19,20 milder.
As adopt this structure, electric field is concentrated more relaxed.
(2) in Fig. 5, the proximal line that semiconducting glaze layer 19,20 sheet resistance are changed has different slopes in permissible range separately.
As adopt this structure, also can relax electric field and concentrate.
(3) in Fig. 5, make the slope of the proximal line β that cap side semiconducting glaze layer 20 sheet resistance change consistent with the proximal line α of stitch side semiconducting glaze layer 19 sheet resistance variation.
As adopt this structure, and can make the consistency of thickness of two semiconducting glaze layers 19,20, help making.
(4) in Fig. 5, the proximal line that semiconducting glaze layer 19,20 sheet resistance are changed is got opposite slope in permissible range separately, and promptly cement material 18 sides are high more in Fig. 2, and are low more the closer to insulating surface 15 sides.
(5) metal oxide with the conductivity enamel of coating electrically conductive glaze layer 19,20 usefulness changes to for example tin oxide, titanium oxide etc.
(6) the diverse multiple semiconducting glaze of metal oxide (for example semiconducting glaze of iron system, titanium system, tin system etc.) layer is arranged in circular concentric as semiconducting glaze layer 19,20, to set the variation of sheet resistance.
(7) semiconducting glaze layer 19,20 directly is coated on the porcelain surface of insulator main body 11.
Adopting as above, structure also can make electric field concentrate mitigation.
(8) apply the present invention to the insulation division of generating field post insulator, line-post insulator and the borderline region of cement material.
Below, the technological thought of grasping by the foregoing description is described.
(1) in claim 1～3, recorded and narrated on porcelain surface and be coated with the insulation glaze, and on this insulating surface, be coated with semiconducting glaze so that the band local-conducting glaze insulator of semiconducting glaze layer 19,20 to be set as the insulating surface of insulator main body 11.
When adopting this structure, can form as long as conductivity enamel width, thickness in accordance with regulations is coated on the assigned position on insulator main body 11 surfaces, semiconducting glaze layer 19,20, processing is simple, help making.
As above describe in detail, if adopt the present invention then can obtain following significant effect.
According to the invention of claim 1, can improve the anti-electric field centrality of band local-conducting glaze insulator, reach high-voltage level and also corona discharge can not take place.Therefore, even under harsh service condition, also can prevent corona discharge or RIV.
According to the invention of claim 2 and 3, the electric field of the insulating surface of insulator main body and the borderline region of cement material is concentrated and is relaxed, and can form the structure that is difficult to take place corona discharge or RIV.
Claims (3)
1. be with the local-conducting glaze insulator for one kind, two ends in the insulator main body combine by the connector of cement material with charged side and ground connection side, and on the insulating surface of insulator main body and the borderline region between the cement material, be provided with the semiconducting glaze layer, it is characterized in that: the sheet resistance of charged side semiconducting glaze layer is set at 100～800M Ω, and the sheet resistance of ground connection side semiconducting glaze layer is set at 20～1000M Ω.
2. band local-conducting glaze insulator according to claim 1 is characterized in that: for the sheet resistance that makes above-mentioned each semiconducting glaze layer produces high low head between the insulating surface of insulator main body and cement material, make this sheet resistance smooth variation.
3. band local-conducting glaze insulator according to claim 2 is characterized in that: make above-mentioned sheet resistance high more, low more the closer to the cement material side the closer to the insulating surface side.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP64550/95 | 1995-03-23 | ||
| JP64550/1995 | 1995-03-23 | ||
| JP6455095A JPH08264052A (en) | 1995-03-23 | 1995-03-23 | Partial conductive-glazed insulator |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1135647A CN1135647A (en) | 1996-11-13 |
| CN1073741C true CN1073741C (en) | 2001-10-24 |
Family
ID=13261451
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN96101363A Expired - Lifetime CN1073741C (en) | 1995-03-23 | 1996-02-07 | Insulator with local-conducting glaze |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPH08264052A (en) |
| CN (1) | CN1073741C (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102208233A (en) * | 2010-11-30 | 2011-10-05 | 苏州电瓷厂有限公司 | Suspension type porcelain insulator for direct-current overhead power transmission line |
| CN103700452B (en) * | 2014-01-07 | 2016-09-28 | 湖北德赛绝缘设备技术发展有限公司 | Corona loss and Electromagnetic Interference and the insulator of raising gold utensil efficiency of preservation can be reduced |
| CN113178295A (en) * | 2021-04-22 | 2021-07-27 | 江西百新电瓷电气有限公司 | Semiconductor lightning protection ice combined porcelain insulator |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN88100813A (en) * | 1987-02-11 | 1988-08-24 | 日本碍子株式会社 | A kind of anti-corrosive insulation |
| CN88100505A (en) * | 1987-02-04 | 1988-08-24 | 日本碍子株式会社 | A kind of suspension insulator |
| CN2169900Y (en) * | 1993-07-24 | 1994-06-22 | 大连电瓷厂 | Anti-dizzy suspending procelain insulator |
-
1995
- 1995-03-23 JP JP6455095A patent/JPH08264052A/en active Pending
-
1996
- 1996-02-07 CN CN96101363A patent/CN1073741C/en not_active Expired - Lifetime
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN88100505A (en) * | 1987-02-04 | 1988-08-24 | 日本碍子株式会社 | A kind of suspension insulator |
| CN88100813A (en) * | 1987-02-11 | 1988-08-24 | 日本碍子株式会社 | A kind of anti-corrosive insulation |
| CN2169900Y (en) * | 1993-07-24 | 1994-06-22 | 大连电瓷厂 | Anti-dizzy suspending procelain insulator |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH08264052A (en) | 1996-10-11 |
| CN1135647A (en) | 1996-11-13 |
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