CN107365089A - 一种低辐射镀膜玻璃 - Google Patents
一种低辐射镀膜玻璃 Download PDFInfo
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Abstract
本发明涉及一种低辐射镀膜玻璃，包括玻璃基板（1），自玻璃基板表面向外采用磁控溅射法依次沉积第一电介质层（2）、第一保护层（3）、低辐射功能膜层（4）、第二保护层（5）、第二电介质层（6）,其特征在于在第二电介质层上面制有第三保护层（7），第三保护层为非晶碳DLC膜或氮化碳CN膜层，厚度为10‑25nm。本发明具有以下优点和效果：本发明通过在低辐射镀膜玻璃最外侧增加一层非晶碳DLC膜或氮化碳CN膜，并且厚度相对较薄，因此在保证低辐射镀膜玻璃光学性能变化不大的情况下，可以显著提高其抗磨损、抗化学腐蚀等特性，从而解决毛刷清洗以及化学侵蚀对低辐射镀膜玻璃的影响。
Description
技术领域
本发明属于玻璃制造技术领域，特别涉及一种低辐射镀膜玻璃及其制备方法。
背景技术
低辐射镀膜玻璃最外层膜通常为氮化硅材料，在实际应用中，氮化硅有很多不足之处。一方面工艺要求（包括成本要求）最外层氮化硅膜厚度大约在20-30nm，实际使用中发现如果低辐射镀膜玻璃长时间暴露在潮湿的空气中而未及时进行中空处理，就会有少量氧气分子及水分子穿过氮化硅膜进入膜系内部，导致整个膜系变质，产品报废。另一方面，在下游工艺处理的时候，低辐射镀膜玻璃对于清洗机的毛刷硬度有要求。当使用清洗普通玻璃的硬毛刷清洗低辐射镀膜玻璃时会对氮化硅膜造成伤害，单纯为提高低辐射镀膜玻璃抗磨、抗腐蚀性能而配备一条加工线成本较高。
发明内容
本发明的目的之一就是针对现有技术中存在的氧气分子及水分子易穿过氮化硅膜进入膜系内部，导致整个膜系变质的问题，提供了一种低辐射镀膜玻璃及其制备方法。本发明的目的之二就是为了解决现有技术中存在氮化硅膜耐磨性较差，在清洗时易损伤氮化硅膜的问题，提供了一种低辐射镀膜玻璃及其制备方法。
为了达到上述目的，本发明采用如下技术方案：
一种低辐射镀膜玻璃，包括玻璃基板，自所述玻璃基板表面向外依次沉积第一电介质层、第一保护层、低辐射功能膜层、第二保护层、第二电介质层和第三保护层。
在其中一些实施例中，所述第一电介质层为SiN膜层，厚度为20-50nm。
在其中一些实施例中，所述第一保护层为NiCr膜层，厚度为1-10nm。
在其中一些实施例中，所述低辐射功能膜层为Ag膜层，厚度为5-20nm。
在其中一些实施例中，所述第二保护层为NiCr膜层，厚度为1-10nm。
在其中一些实施例中，所述第二电介质层为SiN膜层，厚度为20-50nm。
在其中一些实施例中，所述第三保护层为非晶碳DLC膜或氮化碳CN膜层，厚度为10-25nm。
制备所述的低辐射镀膜玻璃，具体为磁控溅射沉积；其中所述镀膜过程中第三保护层采用直流或中频或射频或直流-射频耦合溅射，具体参数为：溅射功率密度为0.5-3.5W/cm2，氮气流量为0-100sccm，氩气流量为100-500sccm。
本发明提供了一种低辐射镀膜玻璃及其制备方法，与现有产品相比，其具有以下优点和效果：本发明通过在低辐射镀膜玻璃最外侧增加一层非晶碳DLC膜或氮化碳CN膜，并且厚度相对较薄，因此在保证低辐射镀膜玻璃光学性能变化不大的情况下，可以显著提高其抗磨损、抗化学腐蚀等特性，从而解决毛刷清洗以及化学侵蚀对低辐射镀膜玻璃的影响。
以下结合附图，通过示例说明本发明主旨的描述，以清楚本发明的其它方面和优点。
附图说明
结合附图，通过下文的详细说明，可更清楚地理解本发明的上述及其它特征和优点，其中：
图1为本发明实施例提供的一种低辐射镀膜玻璃的示意图，其中：1-玻璃基板、2-第一电介质层、3-第一保护层、4-低辐射功能膜层、5-第二保护层、6-第二电介质层、7-第三保护层。
具体实施方式
参见本发明具体实施例的附图，下文将更详细地描述本发明。然而，本发明可以以许多不同形式实现，并且不应解释为受在此提出之实施例的限制。相反，提出这些实施例是为了达成充分及完整公开，并且使本技术领域的技术人员完全了解本发明的范围。
现参考附图详细说明本发明实施例提供的一种低辐射镀膜玻璃。
如图1所示，本发明实施例提供的一种低辐射镀膜玻璃，包括玻璃基板1、第一电介质层2、第一保护层3、低辐射功能膜层4、第二保护层5、第二电介质层6和第三保护层7。
本实施例中，将清洗干净的玻璃基板1放在磁控溅射设备的真空腔体内，对玻璃基板1表面进行镀膜，依次沉积第一电介质层2、第一保护层3、低辐射功能膜层4、第二保护层5、第二电介质层6和第三保护层7。具体地，本实施例中，第一电介质层为SiN膜层，厚度为25nm；第一保护层为NiCr膜层，厚度为3nm；低辐射功能膜层为Ag膜层，厚度为10nm；第二保护层为NiCr膜层，厚度为3nm；第二电介质层为SiN膜层，厚度为25nm；第三保护层为CN膜层，厚度为15nm，采用直流磁控溅射沉积而成，其中靶材选用的是纯度为99.9%的碳靶，靶基距为10cm，溅射功率密度为2.0W/cm2，工作压强为0.3Pa，氮气流量为50sccm，氩气流量为200sccm，膜层生长速率为8nm/min。
采用此种结构的低辐射镀膜玻璃，在光学性能变化不大的情况下，其表面硬度达到9H；同时经耐候性测试发现，低辐射镀膜玻璃实验前后的可见光透过率差值小于2%，因此可以看出，通过增加第三保护层，低辐射镀膜玻璃的抗磨损、抗腐蚀性能得到明显的提高。以上详细描述了本发明的较佳具体实施例。应当理解，本领域的普通技术人员无需创造性劳动就可以根据本发明的构思做出诸多修改和变化。凡本技术领域中技术人员依本发明的构思在现有技术的基础上通过逻辑分析、推理或者有限的实验可以得到的技术方案，皆应在由权利要求书所确定的保护范围内。
Claims (3)
1.一种低辐射镀膜玻璃，包括玻璃基板（1），自玻璃基板表面向外采用磁控溅射法依次沉积第一电介质层（2）、第一保护层（3）、低辐射功能膜层（4）、第二保护层（5）、第二电介质层（6）, 其特征在于：在第二电介质层上面制有第三保护层（7），第三保护层为非晶碳DLC膜或氮化碳CN膜层，厚度为10-25nm。
2.根据权利要求1所述的一种低辐射镀膜玻璃，其特征在于：
所述第一电介质层为SiN膜层，厚度为20-50nm；
所述第一保护层为NiCr膜层，厚度为1-10nm；
所述低辐射功能膜层为Ag膜层，厚度为5-20nm；
所述第二保护层为NiCr膜层，厚度为1-10nm；
所述第二电介质层为SiN膜层，厚度为20-50nm。
3.制备如权利要求1或2所述的一种低辐射镀膜玻璃的方法，其特征在于:第三保护层采用磁控溅射沉积， 溅射功率密度为0.5-3.5W/cm2，氮气流量为0-100sccm，氩气流量为100-500sccm。
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