CN107359207A - A kind of Schottky-barrier diode and its manufacture method - Google Patents
A kind of Schottky-barrier diode and its manufacture method Download PDFInfo
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- CN107359207A CN107359207A CN201710171378.1A CN201710171378A CN107359207A CN 107359207 A CN107359207 A CN 107359207A CN 201710171378 A CN201710171378 A CN 201710171378A CN 107359207 A CN107359207 A CN 107359207A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
- 238000000034 method Methods 0.000 title claims abstract description 12
- 239000002184 metal Substances 0.000 claims abstract description 96
- 229910052751 metal Inorganic materials 0.000 claims abstract description 96
- 239000000758 substrate Substances 0.000 claims abstract description 40
- 230000004888 barrier function Effects 0.000 claims abstract description 18
- 239000004065 semiconductor Substances 0.000 claims abstract description 11
- 230000000873 masking effect Effects 0.000 claims description 11
- 230000026267 regulation of growth Effects 0.000 claims description 3
- 230000007246 mechanism Effects 0.000 claims description 2
- 239000013078 crystal Substances 0.000 description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
- H01L29/66143—Schottky diodes
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The invention discloses a kind of Schottky-barrier diode, including:Including at least one semiconductor unit, the semiconductor unit includes the second conduction type doped substrate, separate first groove and second groove are provided with above the side of the substrate simultaneously, metal level is provided with first groove and the second groove top end opening, the metal level includes cathode metal layer and anode metal layer；The first groove inwall is provided with ohmic contact metal layer, the second groove inwall is provided with schottky barrier metal layer, the conductive layer of the first groove contacts along the direction extension opposite with substrate with cathode metal layer, and the conductive layer of the second groove contacts along the direction extension opposite with substrate with anode metal layer.In addition, the invention also discloses a kind of manufacture method of Schottky-barrier diode.Using the present invention, the pressure drop of forward conduction is reduced.
Description
Technical field
The present invention relates to diode technologies field, more particularly to a kind of Schottky-barrier diode and its manufacture method.
Background technology
Schottky-barrier diode has used many decades as rectifying device in power supply application field, due to just
It is low fast a little with switching speed to conduction voltage drop, it is very suitable for Switching Power Supply application Schottky barrier two in recent years
Pole pipe also has tremendous development in photovoltaic and automotive electronics application field.
At present, Schottky barrier diode structure generally comprises the first conduction type high-dopant concentration monocrystalline substrate, makees
For the lower metal layer positioned at substrate floor of device cathodes, the first conduction type low doping concentration extension of substrate is grown on
Layer, positioned at the schottky barrier metal layer of epitaxial layer top surface, and positioned at schottky barrier metal layer top surface as device sun
The upper metal level of pole.Device electrode is located at monocrystalline silicon wafer crystal both sides, and electric current passes through on the direction on monocrystalline silicon wafer crystal surface
By Xiao Te barrier metal layers, epitaxial layer and substrate flow；At present, the thickness of substrate is typically all thicker, when forward direction is powered, electricity
Stream needs flowing through substrate, adds the series resistance of current path, raises device forward conduction voltage drop.
The content of the invention
It is an object of the invention to provide a kind of electrode to be located at monocrystalline silicon wafer crystal (substrate) homonymy, and electric current is parallel to monocrystalline silicon
Through there is the Schottky-barrier diode of schottky barrier metal layer and extension laminar flow on the direction of crystal column surface, forward direction is reduced
The pressure drop of conducting.
To solve the problems, such as that prior art is present, the present invention provides a kind of Schottky-barrier diode, and the diode includes
At least one semiconductor unit, the semiconductor unit include substrate, are provided with simultaneously mutually above the side of the substrate
Independent first groove and second groove, metal level, the gold are provided with first groove and the second groove top end opening
Category layer includes cathode metal layer and anode metal layer；The first groove inwall is provided with ohmic contact metal layer, along described
Second groove inwall is provided with schottky barrier metal layer, and conductive layer is separately filled with the first groove and second groove,
The conductive layer of the first groove contacts with cathode metal layer, and the conductive layer of the second groove contacts with anode metal layer, institute
Cathode metal layer is stated not connect mutually with anode metal layer.
In addition, the substrate is the second conduction type doped substrate, in the second conduction type doped substrate and metal
The first conduction type doped epitaxial layer is additionally provided between layer, the first groove and second groove are horizontally arranged at interval in extension
In layer.
In addition, the first groove and second groove extend downward into the top of substrate.
In addition, the conductive layer of filling is metal conducting layer in the first groove and second groove.
In addition, being additionally provided with dielectric layer between the epitaxial layer and metal level, through hole, institute are provided with the dielectric layer
State through hole to be located at the top of conductive layer and expose portion conductive layer, the cathode metal layer is led by the through hole and first groove
Electric layer contacts, and the anode metal layer passes through the through hole and the conductive layers make contact of second groove.
Accordingly, the invention provides a kind of manufacture method of Schottky-barrier diode, including：
S1, the conduction type doped epitaxial layer of growth regulation one in the second conduction type doped substrate；
S2, form first groove and second groove respectively in the middle part of the epitaxial layer, and Europe is formed in the first groove inwall
Nurse contact metal layer, schottky barrier metal layer is formed in the second groove inwall；
S3, conductive layer is internally formed in first groove and second groove；
S4, metal level is formed at the top of total, cathodic metal is formed with the metal level of the conductive layers make contact in first groove
Layer, the metal level of the conductive layers make contact in second groove form anode metal layer.
In addition, also include：The second conduction type doped region is formed on epitaxial layer top.
In addition, the step S2 is specifically included：
S21, forms groove in the epitaxial layer, and groove extends downward into substrate top；
S22, at the top of the first masking dielectric layer covered structure, interval exposes part of trench, forms first groove；
S23, ohmic contact metal layer is formed in first groove inwall；
S24, at the top of the second masking dielectric layer covered structure, part of trench at the exposure of interval, form second groove；
S25, schottky barrier metal layer is internally formed in second groove；
S26, remove the masking dielectric layer at the top of total；
S27, conductive layer is internally formed in first groove and second groove.
In addition, also including, the region that first groove is surrounded in epitaxial layer and substrate forms the second conduction type heavy doping
Area.
In addition, also include,
S5, dielectric layer is formed at the top of whole mechanism；
S6, through hole is formed in the dielectric layer, exposure Conductive layer portions top, the conductive layer in first groove is passed through the through hole
Contacted with cathode metal layer, the conductive layer in the second groove is contacted by the through hole with anode metal layer.
The technical program sets cathode metal layer and anode metal layer in the homonymy of substrate, and electric current no longer passes through during forward conduction
Substrate is crossed, reduces the series resistance on current path, makes device forward conduction voltage drop lower.
Brief description of the drawings
Fig. 1 is a kind of a kind of diagrammatic cross-section of embodiment of Schottky-barrier diode of the present invention；
Fig. 2-5 is a kind of a kind of each process schematic of embodiment of Schottky-barrier diode manufacture method of the present invention.
In figure：1st, substrate；2nd, epitaxial layer；3rd, the second conduction type doped region；4th, first groove；5th, the first conduction type weight
Doped region；6th, ohmic contact metal layer；7th, second groove；8th, schottky barrier metal layer；9th, conductive layer；10th, dielectric layer；11、
Through hole；12nd, cathode metal layer；13rd, anode metal layer；14th, groove；15th, the first masking dielectric layer；16th, the second masking dielectric layer.
Embodiment
The present invention is described in detail below in conjunction with the accompanying drawings.
Need what is illustrated, the Schottky-barrier diode of the embodiment of the present invention can include according to the electric current that circuit need to carry
Multiple semiconductor units or a semiconductor unit, each semiconductor unit include two grooves, filled in each groove
There is conductive layer, the conductive layer of one of groove contacts with cathode metal layer, and another metal level contacts with anode metal layer.Under
Face illustrates exemplified by including two semiconductor units.
With reference to figure 1, the figure is a kind of a kind of diagrammatic cross-section of embodiment of Schottky-barrier diode of the present invention, two pole
Pipe includes the second conduction type doped substrate 1, the first conduction type doped epitaxial layer 2, dielectric layer 10 and gold successively from bottom to top
Belong to layer, the top of epitaxial layer 2 is provided with the second conduction type doped region 3, and being horizontally arranged at interval in epitaxial layer there are some first grooves
4, first groove 4 extends downward into the top of substrate 1, and the first conduction type heavily doped region 5 is provided with outside first groove 4,
The inwall of first groove 4 is provided with ohmic contact metal layer 6, and second groove is provided with the epitaxial layer between adjacent first trenches 4
7, second groove 7 extends downward into the top of substrate 1, and schottky barrier metal layer 8, the first ditch are provided with the inwall of second groove 7
Groove 4 and the inside of second groove 7 are filled with conductive layer 9, and total top surface is covered with the dielectric layer 10.
Through hole 11 is provided with dielectric layer 10, through hole 11 is located at the top of conductive layer 9 and exposed portion conductive layer, metal level are filled out
Fill through hole 11 to contact with conductive layer 9, cathode metal layer 12 is formed with the metal level of the conductive layers make contact in first groove 4, with the
The metal level of conductive layers make contact in two grooves 7 forms anode metal layer 13, cathode metal layer 12 and the anode metal layer 13
Between do not connect mutually.
Epitaxial layer, the groove of setting schottky barrier metal layer in the present embodiment, and anode metal layer and negative electrode gold
Category layer is respectively positioned on the homonymy of substrate.During forward conduction, electric current only flows through schottky barrier metal layer and epitaxial layer, is no longer pass through serving as a contrast
Bottom, the series resistance on current path is reduced, make device forward conduction voltage drop lower.
In addition, the diode in inventive embodiments can add multiple semiconductor units according to practical application, use is facilitated
The use at family.
In addition, the first groove of diode and the conductive layer of the interior filling of second groove in the embodiment of the present invention are led for metal
Electric layer, there is the more preferable capacity of heat transmission, be advantageous to device active region radiating, make device that there is more preferable reliability.
In addition, cathode metal layer and anode metal layer in the homonymy of substrate, are adapted to more various packing forms, more
Beneficial to the Performance And Reliability for improving device, and the system integration and miniaturization.
In addition, epitaxial layer of the embodiment of the present invention, which is horizontally arranged at interval, first groove and second groove, first groove and
Two grooves extend downward into the top of substrate.By increasing epitaxy layer thickness and gash depth, chip area can be effectively reduced,
Device radiating will not be deteriorated simultaneously, the customer service major obstacle of chips shrink down, there is more preferable cost and performance.
Illustrate another aspect of the present invention below.
As shown in Figure 2-5, the manufacturing process of Schottky-barrier diode is：
S101, the conduction type doped epitaxial layer 2 of growth regulation one in the second conduction type doped substrate 1.
S102, the second conduction type doped region 3 is formed on the top of epitaxial layer 2.
S103, forms groove 14 in the epitaxial layer, and groove 14 extends downward into the top of substrate 1.（See Fig. 2）
S104, at the top of the first masking covered structure of dielectric layer 15, interval exposes part of trench, forms first groove 4.
S105, the region that first groove 4 is surrounded in epitaxial layer and substrate form the second conduction type heavily doped region 5.
S106, ohmic contact metal layer 6 is formed in the inwall of first groove 4.（See Fig. 3）
S107, at the top of the second masking covered structure of dielectric layer 16, interval exposes part of trench, forms second groove 7.
S108, schottky barrier metal layer 8 is internally formed in second groove 7.（See Fig. 4）
S109, remove the masking dielectric layer at the top of total.
S110, conductive layer 9 is internally formed in first groove 4 and second groove 7.
S111, dielectric layer 10 is formed at the top of total.（See Fig. 5）
S112, through hole 11 is formed in dielectric layer 10, exposes the atop part of conductive layer 9 to the open air.
S113, metal level is formed at the top of total, the moon is formed with the metal level of the conductive layers make contact in first groove 4
The metal level of conductive layers make contact in pole metal level 12, with second groove 7 forms anode metal layer 13.（See Fig. 1）
Described above is the preferred embodiment of the present invention, it is noted that for those skilled in the art,
Under the premise without departing from the principles of the invention, some improvements and modifications can also be made, these improvements and modifications are also considered as this hair
Bright protection domain.
Claims (10)
- A kind of 1. Schottky-barrier diode, it is characterised in that including at least one semiconductor unit, the semiconductor unit bag Substrate is included, separate first groove and second groove, first ditch are provided with simultaneously above the side of the substrate Metal level is provided with groove and second groove top end opening, the metal level includes cathode metal layer and anode metal layer；Along institute State first groove inwall and be provided with ohmic contact metal layer, the second groove inwall is provided with schottky barrier metal layer, Conductive layer is separately filled with the first groove and second groove, conductive layer and the cathode metal layer of the first groove connect Touch, the conductive layer of the second groove contacts with anode metal layer, and the cathode metal layer does not connect mutually with anode metal layer.
- 2. Schottky-barrier diode according to claim 1, it is characterised in that the substrate is that the second conduction type is mixed Miscellaneous substrate, the first conduction type doped epitaxial layer is additionally provided between the second conduction type doped substrate and metal level, The first groove and second groove are horizontally arranged at interval in epitaxial layer.
- 3. Schottky-barrier diode according to claim 2, the first groove and second groove extend downward into lining The top at bottom.
- 4. Schottky-barrier diode according to claim 1, the conduction of the interior filling of the first groove and second groove Layer is metal conducting layer.
- 5. according to the Schottky-barrier diode any one of claim 1-4, it is characterised in that in the epitaxial layer and Dielectric layer is additionally provided between metal level, through hole is provided with the dielectric layer, the through hole is located at the top of conductive layer and exposure Partial electroconductive layer, the cathode metal layer are led to by the through hole and the conductive layers make contact of first groove, the anode metal layer Cross the through hole and the conductive layers make contact of second groove.
- A kind of 6. manufacture method of Schottky-barrier diode, it is characterised in that including：S1, the conduction type doped epitaxial layer of growth regulation one in the second conduction type doped substrate；S2, form first groove and second groove respectively in the middle part of the epitaxial layer, and Europe is formed in the first groove inwall Nurse contact metal layer, schottky barrier metal layer is formed in the second groove inwall；S3, conductive layer 9 is internally formed in first groove 4 and second groove 7；S4, metal level is formed at the top of total, cathodic metal is formed with the metal level of the conductive layers make contact in first groove 4 Layer 12, the metal level of the conductive layers make contact in second groove 7 form anode metal layer.
- 7. the manufacture method of Schottky-barrier diode according to claim 6, it is characterised in that also include：In extension Second conduction type doped region is formed at layer top.
- 8. the manufacture method of Schottky-barrier diode according to claim 6, it is characterised in that step S2 is specifically wrapped Include：S21, forms groove in the epitaxial layer, and groove extends downward into substrate top；S22, at the top of the first masking dielectric layer covered structure, interval exposes part of trench, forms first groove；S23, ohmic contact metal layer is formed in first groove inwall；S24, at the top of the second masking dielectric layer covered structure, part of trench at the exposure of interval, form second groove；S25, schottky barrier metal layer is internally formed in second groove；S26, remove the masking dielectric layer at the top of total；S27, conductive layer is internally formed in first groove and second groove.
- 9. the manufacture method of Schottky-barrier diode according to claim 6, it is characterised in that also include, in extension The region that first groove is surrounded in layer and substrate forms the second conduction type heavily doped region.
- 10. the manufacture method of Schottky-barrier diode according to claim 6, is characterised by, in addition to,S5, dielectric layer is formed at the top of whole mechanism；S6, through hole is formed in the dielectric layer, exposure Conductive layer portions top, the conductive layer in first groove is passed through the through hole Contacted with cathode metal layer, the conductive layer in the second groove is contacted by the through hole with anode metal layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710171378.1A CN107359207A (en) | 2017-03-21 | 2017-03-21 | A kind of Schottky-barrier diode and its manufacture method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710171378.1A CN107359207A (en) | 2017-03-21 | 2017-03-21 | A kind of Schottky-barrier diode and its manufacture method |
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| Publication Number | Publication Date |
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| CN107359207A true CN107359207A (en) | 2017-11-17 |
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| CN201710171378.1A Pending CN107359207A (en) | 2017-03-21 | 2017-03-21 | A kind of Schottky-barrier diode and its manufacture method |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113193052A (en) * | 2021-04-29 | 2021-07-30 | 东莞市佳骏电子科技有限公司 | Silicon carbide diode with large conduction current |
| WO2022217538A1 (en) * | 2021-04-15 | 2022-10-20 | 苏州晶湛半导体有限公司 | Semiconductor structure and preparation method therefor |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060071235A1 (en) * | 2004-08-27 | 2006-04-06 | Infineon Technologies Ag | Lateral semiconductor diode and method for fabricating it |
| CN103247694A (en) * | 2012-02-07 | 2013-08-14 | 刘福香 | Groove Schottky semiconductor device and manufacturing method thereof |
| CN103545381A (en) * | 2012-07-17 | 2014-01-29 | 朱江 | Grooved Schottky semiconductor device with horizontal structure and method for manufacturing grooved Schottky semiconductor device |
-
2017
- 2017-03-21 CN CN201710171378.1A patent/CN107359207A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060071235A1 (en) * | 2004-08-27 | 2006-04-06 | Infineon Technologies Ag | Lateral semiconductor diode and method for fabricating it |
| CN103247694A (en) * | 2012-02-07 | 2013-08-14 | 刘福香 | Groove Schottky semiconductor device and manufacturing method thereof |
| CN103545381A (en) * | 2012-07-17 | 2014-01-29 | 朱江 | Grooved Schottky semiconductor device with horizontal structure and method for manufacturing grooved Schottky semiconductor device |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2022217538A1 (en) * | 2021-04-15 | 2022-10-20 | 苏州晶湛半导体有限公司 | Semiconductor structure and preparation method therefor |
| CN113193052A (en) * | 2021-04-29 | 2021-07-30 | 东莞市佳骏电子科技有限公司 | Silicon carbide diode with large conduction current |
| CN113193052B (en) * | 2021-04-29 | 2023-02-14 | 东莞市佳骏电子科技有限公司 | Silicon carbide diode with large conduction current |
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