CN107342372A - Top emission organic electroluminescence diode display device and its manufacture method - Google Patents
Top emission organic electroluminescence diode display device and its manufacture method Download PDFInfo
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- CN107342372A CN107342372A CN201710761279.9A CN201710761279A CN107342372A CN 107342372 A CN107342372 A CN 107342372A CN 201710761279 A CN201710761279 A CN 201710761279A CN 107342372 A CN107342372 A CN 107342372A
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- film transistor
- base plate
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
- H10K50/824—Cathodes combined with auxiliary electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
- H10K59/1315—Interconnections, e.g. wiring lines or terminals comprising structures specially adapted for lowering the resistance
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/302—Details of OLEDs of OLED structures
- H10K2102/3023—Direction of light emission
- H10K2102/3026—Top emission
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The present invention provides a kind of top emission organic electroluminescence diode display device and its manufacture method.The top emission organic electroluminescence diode display device, including：Thin film transistor base plate；Organic luminous layer, it is arranged on the thin film transistor base plate；Cathode layer, it is arranged on the organic luminous layer；Negative electrode auxiliary layer, it is arranged on the cathode layer；Cover plate is relative with the thin film transistor base plate；Spacer material, the cover plate one side relative with the thin film transistor base plate is arranged on, is contacted with the negative electrode auxiliary layer.According to the top emission organic electroluminescence diode display device of the present invention, using 3D printing technique, the resistance for reducing cathode layer on thin film transistor base plate can be combined together by the thicker negative electrode auxiliary layer of thickness and cathode layer, improves image refreshing frequency, while do not interfere with light transmittance.
Description
Technical field
The present invention relates to display technology field, more particularly to a kind of top emission organic electroluminescence diode display device and
Its manufacture method.
Background technology
Current, ORGANIC ELECTROLUMINESCENCE DISPLAYS (OLED) is shown with features such as frivolous, low consumption, high response, high-resolution in flat board
Show that field just comes onto stage, its market potential prospect is had an optimistic view of by industry.Top emitting AMOLED (the poles of active organic electroluminescent two
Pipe) can effectively solve because aperture opening ratio caused by complicated TFT (TFT) compensation circuit reduces and display screen
The problem of luminance-reduction, while by using microcavity effect present in top emitting AMOLED device architectures, can also be right
The colour gamut of AMOLED display screens is improved, and improves display effect.
Must project part as top emitting AMOLED, the light transmittance and electrical conductivity of transparent cathode be it is vital because
Element.Conventional cathode material such as Al, Mg-Ag, Ag only can just have preferable light transmittance, but the excessively thin meeting of cathode layer when very thin
Cause open circuit or metal oxidation, it is impossible to form effective Ohmic contact, cause brightness of display screen uneven.
The content of the invention
In view of above mentioned problem of the prior art, it is an object of the invention to provide a kind of top radiation organic EL two
Pole pipe display device and its manufacture method, the effective contact that can be formed between electrode layer, improve image refreshing frequency.
The present invention provides a kind of top emission organic electroluminescence diode display device, including：Thin film transistor base plate；Have
Machine luminescent layer, it is arranged on the thin film transistor base plate；Cathode layer, it is arranged on the organic luminous layer；Negative electrode auxiliary layer,
It is arranged on the cathode layer；Cover plate is relative with the thin film transistor base plate；Spacer material, be arranged on the cover plate with it is described
The relative one side of thin film transistor base plate, contacted with the negative electrode auxiliary layer.
Wherein, the negative electrode auxiliary layer is the metal electrode film layer that is formed using 3D printing technique.
The top emission organic electroluminescence diode also includes the pixel defining layer being arranged on the thin film transistor (TFT),
The cathode layer covers the pixel defining layer, and the position of the negative electrode auxiliary layer is relative with the position of the pixel defining layer
Should.
Wherein, the thickness of the negative electrode auxiliary layer in 300nm between 600nm.
Wherein, the thickness of the cathode layer in 100nm between 200nm.
The present invention also provides a kind of manufacture method of top emission organic electroluminescence diode, including：Form film crystal
Pipe substrate；Pixel definition organic luminous layer is formed on the thin film transistor base plate；Cathode layer is formed on the organic layer；
Negative electrode auxiliary layer is formed on the cathode layer；Cover plate is formed, spacer material is formed on the cover plate；To cover plate described in box and institute
State thin film transistor base plate so that the spacer material contacts with the negative electrode auxiliary layer.
Wherein, negative electrode auxiliary layer is formed on the cathode layer to be included forming gold on organic film using 3D printing technique
Belong to electrode film layer, the one side that the metal electrode film layer is provided with to the cathode layer with the thin film transistor base plate is glued
Close, remove the organic film.
Wherein, the organic film is Kapton.
Wherein, the one side that the metal electrode film layer and the thin film transistor base plate are provided with to the cathode layer is carried out
Bonding includes：The metal electrode film layer is set with the thin film transistor base plate using conductive adhesive layer by the way of volume to volume
The one side for having put the cathode layer is bonded.
Wherein the manufacture method also includes forming pixel defining layer on the thin film transistor base plate, and the cathode layer covers
The pixel defining layer is covered, the position of the negative electrode auxiliary layer is corresponding with the position of the pixel defining layer.
According to the top emission organic electroluminescence diode display device of the present invention, using 3D printing technique, can pass through
The thicker negative electrode auxiliary layer of thickness is combined together the resistance for reducing cathode layer on thin film transistor base plate with cathode layer, improves figure
As refreshing frequency, while light transmittance is not interfered with.
Brief description of the drawings
Fig. 1 is the structural representation for showing the top emission organic electroluminescence diode display device according to prior art.
Fig. 2 is the scanning electron image of electric contacting layer for showing to be formed in the prior art on spacer material.
Fig. 3 is the structural representation for showing top emission organic electroluminescence diode display device according to embodiments of the present invention
Figure.
Fig. 4 is the manufacture method for showing top emission organic electroluminescence diode display device according to embodiments of the present invention
Process chart.
Fig. 5 is the structural representation for showing negative electrode auxiliary layer according to embodiments of the present invention.
Embodiment
The present invention is described in further detail with reference to the accompanying drawings and examples.It is understood that this place is retouched
The specific embodiment stated is only used for explaining the present invention, rather than limitation of the invention.It also should be noted that for the ease of
Describe, part related to the present invention rather than entire infrastructure are illustrate only in accompanying drawing.
As shown in figure 1, the top emission organic electroluminescence diode display device of prior art, including：Glass substrate
101, it is arranged on the thin film transistor base plate 102 of glass substrate；Pixel defining layer 103, organic luminous layer (not shown), if
Put on the thin film transistor base plate；Cathode layer 104 is arranged on organic luminous layer, spacer material (PS) 106, is arranged on negative electrode
On layer, negative electrode auxiliary layer 107 is arranged on spacer material 106.
The reason for setting negative electrode auxiliary layer 107 is that cathode material is usually using transparency electrode oxygen in order to improve light transmittance
Change indium tin (ITO), but ITO electrical conductivity is inadequate, can only increase electrical conductivity by way of auxiliary cathode.In order to realize cathode layer
Electrical contact between 104 and negative electrode auxiliary layer 107, contact electrode layer 105 is set to connect the moon between spacer material and cathode layer 104
Pole layer 104 and negative electrode auxiliary layer 107.
Electric contacting layer 105 is arranged on electric contacting layer 105 on spacer material 106 and uses ITO materials.But it is made in the side on PS
Formula has the risk of ITO fractures.Fig. 2 is the scanning electron figure of electric contacting layer for showing to be formed in the prior art on spacer material
Picture, as shown in Fig. 2 the ITO electric contacting layers formed on spacer material are broken, ultimately resulting in auxiliary cathode 107 can not have
Play a role to effect.
To solve the problems of the prior art, the stability of electrode contact is improved, while is reduced on thin film transistor base plate
Cathode layer resistance, improve image refreshing frequency, the invention provides examples below.
Embodiment one
The present embodiment provides a kind of top emission organic electroluminescence diode display device.Fig. 3 is shown according to the present invention
The structural representation of the top emission organic electroluminescence diode display device of embodiment.
As shown in figure 3, the top emission organic electroluminescence diode display device includes：Glass substrate 201, is arranged on glass
The thin film transistor base plate 202 of glass substrate；Pixel defining layer 203, it is arranged on thin film transistor base plate 202, organic luminous layer
(not shown), it is arranged on the thin film transistor base plate；Cathode layer 204 is arranged on organic luminous layer, described in covering
Pixel defining layer 203, negative electrode auxiliary layer 207 are arranged on cathode layer 204, and the position of negative electrode auxiliary layer 207 is determined with the pixel
The position of adopted layer 203 is corresponding.Cover plate 210 is relative with the thin film transistor base plate；Spacer material 206, it is arranged on the cover plate
The one side relative with the thin film transistor base plate, contacted with the negative electrode auxiliary layer 207.
In the present embodiment, the negative electrode auxiliary layer 207 is the metal electrode film layer that is formed using 3D printing technique.Adopt
The advantage for 3D printing to be formed negative electrode auxiliary layer is to perform etching, can be once-forming, therefore can be formed
The thicker negative electrode auxiliary layer of thickness, and negative electrode auxiliary layer is formed in the top of the pixel defining layer 203, thicker electrode layer
Light transmittance will not be had an impact.And cathode layer 204 is due to that will perform etching processing, it is impossible to formation it is too thick.So thickness compared with
Thick negative electrode auxiliary layer is combined together the resistance that can reduce cathode layer on thin film transistor base plate with cathode layer.
In the present embodiment, the material of the negative electrode auxiliary layer can ensure good electric conductivity for gold or silver, the material,
The thickness of the negative electrode auxiliary layer 204 is in 300nm between 600nm.
The material of the cathode layer 204 is AZO (aluminum zinc oxide), and the thickness of the cathode layer 204 is in 100nm to 200nm
Between.
According to the top emission organic electroluminescence diode display device of the present embodiment, the thicker negative electrode of thickness can be passed through
Auxiliary layer is combined together the resistance for reducing cathode layer on thin film transistor base plate with cathode layer, improves image refreshing frequency, together
When do not interfere with light transmittance.
Embodiment two
The present embodiment provides a kind of manufacture method of top emission organic electroluminescence diode display device.Fig. 4 is to show
The process chart of the manufacture method of top emission organic electroluminescence diode display device according to embodiments of the present invention.
As shown in figure 4, this method comprises the following steps.
In step S401, thin film transistor base plate is formed, including substrate substrate is cleaned using standard method, and
Carry out the preparation section of thin film transistor (TFT).
In step S402, pixel defining layer and organic luminous layer are formed on the thin film transistor base plate.Including：With
The mode of rotary coating coats one layer of photo-curing material, and thickness is between 1.6 microns~2.0 microns.Carry out front baking, exposure, show
Shadow, rear baking, patterning process prepare pixel defining layer；Organic luminous layer is prepared with the mode of evaporation.
In step S403, cathode layer is formed on the organic layer；AZO cathode layers are prepared using sputtering equipment.
In step s 404, negative electrode auxiliary layer is formed on cathode layer, negative electrode auxiliary layer is arranged to position and determined with pixel
The position correspondence of adopted layer, that is, the top (as shown in Figure 3) of pixel defining layer is arranged on, including：Existed using 3D printing technique
Printed material is gold or the negative electrode auxiliary layer of silver on polyimide film, is fitted to and the thin film transistor (TFT) base by conducting resinl
Plate is provided with the one side of the cathode layer, removes Kapton, obtains metallic cathode auxiliary layer.Fig. 5 is shown according to this
The structural representation of the negative electrode auxiliary layer of inventive embodiments.As shown in figure 5, latticed negative electrode auxiliary layer 502 is arranged on polyamides
On imines film 501, after Kapton 501 is removed, latticed negative electrode auxiliary layer is arranged on cathode layer.
The advantage for using 3D printing to be formed negative electrode auxiliary layer is to perform etching, can one-shot forming, because
This can form the thicker negative electrode auxiliary layer of thickness, and negative electrode auxiliary layer is formed in the top of the pixel defining layer 203, compared with
Thick electrode layer will not have an impact to light transmittance.And cathode layer 204 is due to that will perform etching processing, it is impossible to formation it is too thick.
So the thicker negative electrode auxiliary layer of thickness is combined together the electricity that can reduce cathode layer on thin film transistor base plate with cathode layer
Resistance.
In step S405, cover plate is formed.
The stepped construction of cover plate is followed successively by black matrix layer, color film layer, flatness layer.Its preparation method is as follows：
A) substrate substrate is cleaned using standard method；And carry out the preparation of black matrix process；
B) apply overlapping colours membrane material with the mode of slot coated, front baking, exposure, development, rear dry, be graphical；Thickness is 2.0 micro-
Rice；
C) flat layer material is coated using the mode of slot coated, carries out front baking, exposure, development, rear baking, figure chemical industry
Skill；Formation thickness is 2.0 microns.
In step S406, formed on cover plate and form spacer material, be specially：PS materials are coated with the mode of slot coated to enter
Row front baking, exposure, development, rear baking, graphically prepare spacer material, thickness is between 2.5 microns~3.0 microns.
In step S 407, to cover plate described in box and thin film transistor base plate so that the spacer material and the negative electrode are auxiliary
Help layer to contact, that is, obtain top emission organic electroluminescence diode device.
According to the manufacture method of the top emission organic electroluminescence diode display device of the present embodiment, pass through 3D printing skill
Art forms negative electrode auxiliary layer, can the thicker negative electrode auxiliary layer of thickness and cathode layer be combined together and can reduce thin film transistor (TFT)
The resistance of cathode layer on substrate, image refreshing frequency is improved, while do not interfere with light transmittance.
It will be appreciated by those skilled in the art that the invention is not restricted to specific embodiment described here, to art technology
It can carry out various significantly changing, readjust and substituting without departing from protection scope of the present invention for personnel.Therefore,
Although being described in further detail by above example to the present invention, the present invention is not limited only to above implementation
Example, without departing from the inventive concept, other more equivalent embodiments can also be included, and the scope of the present invention is by institute
Attached claim determines.
Claims (10)
1. a kind of top emission organic electroluminescence diode display device, including：
Thin film transistor base plate；
Organic luminous layer, it is arranged on the thin film transistor base plate；
Cathode layer, it is arranged on the organic luminous layer；
Negative electrode auxiliary layer, it is arranged on the cathode layer；
Cover plate is relative with the thin film transistor base plate；
Spacer material, the cover plate one side relative with the thin film transistor base plate is arranged on, is contacted with the negative electrode auxiliary layer.
2. top emission organic electroluminescence diode as claimed in claim 1, the negative electrode auxiliary layer is using 3D printing skill
The metal electrode film layer that art is formed.
3. top emission organic electroluminescence diode as claimed in claim 1 or 2, in addition to it is arranged on the thin film transistor (TFT)
On pixel defining layer, the cathode layer covers the pixel defining layer, and position and the pixel of the negative electrode auxiliary layer are determined
The position of adopted layer is corresponding.
4. top emission organic electroluminescence diode as claimed in claim 1 or 2, the thickness of the negative electrode auxiliary layer exists
300nm is between 600nm.
5. top emission organic electroluminescence diode as claimed in claim 1 or 2, the thickness of the cathode layer in 100nm extremely
Between 200nm.
6. a kind of manufacture method of top emission organic electroluminescence diode, including：
Form thin film transistor base plate；
Pixel definition organic luminous layer is formed on the thin film transistor base plate；
Cathode layer is formed on the organic layer；
Negative electrode auxiliary layer is formed on the cathode layer；
Cover plate is formed, spacer material is formed on the cover plate；
To cover plate described in box and the thin film transistor base plate so that the spacer material contacts with the negative electrode auxiliary layer.
7. the manufacture method of top emission organic electroluminescence diode as claimed in claim 6, wherein on the cathode layer
Forming negative electrode auxiliary layer includes forming metal electrode film layer on organic film using 3D printing technique, by the metal electrode film
The one side that layer is provided with the cathode layer with the thin film transistor base plate is bonded, and removes the organic film.
8. the manufacture method of top emission organic electroluminescence diode as claimed in claim 6, wherein the organic film is
Kapton.
9. the manufacture method of top emission organic electroluminescence diode as claimed in claim 6, wherein by the metal electrode
Film layer carries out bonding with the thin film transistor base plate there is provided the one side of the cathode layer to be included：It is sharp by the way of volume to volume
The one side that the metal electrode film layer is provided with to the cathode layer with the thin film transistor base plate with conductive adhesive layer is glued
Close.
10. the manufacture method of top emission organic electroluminescence diode as claimed in claim 6, it is brilliant to be additionally included in the film
Form pixel defining layer on body pipe substrate, the cathode layer covers the pixel defining layer, the position of the negative electrode auxiliary layer with
The position of the pixel defining layer is corresponding.
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| CN201710761279.9A CN107342372A (en) | 2017-08-30 | 2017-08-30 | Top emission organic electroluminescence diode display device and its manufacture method |
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Cited By (8)
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| CN108074962A (en) * | 2018-02-11 | 2018-05-25 | 京东方科技集团股份有限公司 | Array substrate and preparation method thereof, display panel, display device |
| CN108417609A (en) * | 2018-04-10 | 2018-08-17 | 京东方科技集团股份有限公司 | Display base plate and preparation method thereof and display device |
| CN109411522A (en) * | 2018-11-06 | 2019-03-01 | 京东方科技集团股份有限公司 | A kind of transparent display panel and preparation method thereof, display device |
| CN109935618A (en) * | 2019-03-06 | 2019-06-25 | 深圳市华星光电半导体显示技术有限公司 | A kind of OLED display panel and preparation method thereof |
| CN110504384A (en) * | 2019-08-29 | 2019-11-26 | 京东方科技集团股份有限公司 | Organic electroluminescence device and display panel |
| CN110911583A (en) * | 2019-11-28 | 2020-03-24 | 京东方科技集团股份有限公司 | Organic light-emitting display cover plate, manufacturing method and display device |
| CN111509138A (en) * | 2020-04-27 | 2020-08-07 | 合肥鑫晟光电科技有限公司 | Display panel and manufacturing method thereof |
| CN111599937A (en) * | 2020-05-25 | 2020-08-28 | 合肥视涯技术有限公司 | Organic light-emitting display panel and preparation method thereof |
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| CN110911583B (en) * | 2019-11-28 | 2022-07-01 | 京东方科技集团股份有限公司 | Organic light-emitting display cover plate, manufacturing method and display device |
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| CN111509138A (en) * | 2020-04-27 | 2020-08-07 | 合肥鑫晟光电科技有限公司 | Display panel and manufacturing method thereof |
| CN111599937A (en) * | 2020-05-25 | 2020-08-28 | 合肥视涯技术有限公司 | Organic light-emitting display panel and preparation method thereof |
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Application publication date: 20171110 |