CN107342206A - 分子束清洁 - Google Patents

分子束清洁 Download PDF

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Publication number
CN107342206A
CN107342206A CN201710241756.9A CN201710241756A CN107342206A CN 107342206 A CN107342206 A CN 107342206A CN 201710241756 A CN201710241756 A CN 201710241756A CN 107342206 A CN107342206 A CN 107342206A
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China
Prior art keywords
molecular beam
molecule
speed
field
cleaned
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Pending
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CN201710241756.9A
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English (en)
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卢受益
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Individual
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Individual
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Priority to CN201710241756.9A priority Critical patent/CN107342206A/zh
Publication of CN107342206A publication Critical patent/CN107342206A/zh
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/31—Processing objects on a macro-scale
    • H01J2237/3151—Etching

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

本发明提出了分子束清洁的方法，并提出了加速分子，扫描分子束的几种方法。

Description

分子束清洁
本发明利用一束分子射到要清洁的表面在一个真空或低气压的容器中，使得上面的污物脱离这面，而被真空泵抛出容器外。我们都知道，分子的能量＝mv2/2，能量不仅决定于分子的质量，更大程度上决定于分子的速度(平方关系大于直线关系)。因此控制分子束中分子的速度是本发明的要点。速度小，清洁效率低，速度太大，容易使表面破损。本发明可用于生物，医药，电子等行业中。
控制速度的方法有：
一，当气体由高压经过小孔径到真空中由于压力差而产生速度，改变孔径形状，可改变速度；
二，加上直流梯度电场或磁场可使分子偶极距取向一致并获得梯度方向速度；
三，在分子横向加交流磁场，可使分子变为磁偶极子，再加同向或逆向磁场可增加或减少速度；
因为我们要请洁的是一个面，必须让分子束在被清洁的面上扫描，常用的扫描方法有：
一，机械的：用机械方法使被清洁面或发射头上下左右移动，达到全部复盖；
二，在用交流畅使分子变为磁子后，用类似显像管偏转线圈及偏转电路方法在面上扫描。
附图说明：
附图是本发明的模式图。

Claims (3)

1.用分子束打到要清洁的表面，此表面处于真空的容器中。
2.分子可用喷口形状由高压到低压加速，用磁场，电场，加速，以提高清洁效率。
3.分子束可用机械方法，交流场加谝转磁场扫描以达到由点到面的清洁。
CN201710241756.9A 2017-04-11 2017-04-11 分子束清洁 Pending CN107342206A (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201710241756.9A CN107342206A (zh) 2017-04-11 2017-04-11 分子束清洁

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201710241756.9A CN107342206A (zh) 2017-04-11 2017-04-11 分子束清洁

Publications (1)

Publication Number Publication Date
CN107342206A true CN107342206A (zh) 2017-11-10

Family

ID=60222724

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201710241756.9A Pending CN107342206A (zh) 2017-04-11 2017-04-11 分子束清洁

Country Status (1)

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CN (1) CN107342206A (zh)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110059681A1 (en) * 2009-09-10 2011-03-10 Bowers Charles W Co2 nozzles
CN102113094A (zh) * 2008-06-20 2011-06-29 瓦里安半导体设备公司 离子源清洁方法及其装置
CN106793443A (zh) * 2017-02-24 2017-05-31 金华职业技术学院 一种使用无隔膜型激波管的超高温分子束源

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102113094A (zh) * 2008-06-20 2011-06-29 瓦里安半导体设备公司 离子源清洁方法及其装置
US20110059681A1 (en) * 2009-09-10 2011-03-10 Bowers Charles W Co2 nozzles
CN106793443A (zh) * 2017-02-24 2017-05-31 金华职业技术学院 一种使用无隔膜型激波管的超高温分子束源

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
SEBASTIAAN Y T VAN DE MEERAKKER: ""Taming molecular beams"", 《NATURE PHYSICS》, pages 595 - 602 *

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