CN107334464A - A kind of pulse meter based on the embedded nano thin-film photoelectric sensor of graphene edge - Google Patents
A kind of pulse meter based on the embedded nano thin-film photoelectric sensor of graphene edge Download PDFInfo
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- CN107334464A CN107334464A CN201611105263.4A CN201611105263A CN107334464A CN 107334464 A CN107334464 A CN 107334464A CN 201611105263 A CN201611105263 A CN 201611105263A CN 107334464 A CN107334464 A CN 107334464A
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- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B5/00—Measuring for diagnostic purposes; Identification of persons
- A61B5/02—Detecting, measuring or recording pulse, heart rate, blood pressure or blood flow; Combined pulse/heart-rate/blood pressure determination; Evaluating a cardiovascular condition not otherwise provided for, e.g. using combinations of techniques provided for in this group with electrocardiography or electroauscultation; Heart catheters for measuring blood pressure
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- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B5/00—Measuring for diagnostic purposes; Identification of persons
- A61B5/0059—Measuring for diagnostic purposes; Identification of persons using light, e.g. diagnosis by transillumination, diascopy, fluorescence
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Abstract
The invention discloses a kind of pulse meter based on the embedded nano thin-film photoelectric sensor of graphene edge, including：Infrared light supply unit, for fixing user's finger to be detected and launching the infrared light of specified wavelength to transmit user's finger；Photoelectric sensing unit, photosignal is produced for gathering infrared signal, and according to infrared signal；The silicon substrate of photoelectric sensing unit irradiates growth by ECR plasmas the embedded nano thin-film of graphene edge；Rectification amplifying unit, for photosignal to be carried out into rectification amplification, obtain rectification amplified signal；Signal gathering unit, it is acquired and preserves for gathering rectification amplified signal.The present invention utilizes capture of the border quantum well to light induced electron, can greatly reduce the compound of photo-generate electron-hole pair, improves photoresponse rate, and the measurement to human body finger tip pulse signal is more precise and stable.
Description
Technical field
The present invention relates to nano thin-film field of photoelectric technology, more particularly to a kind of receive based on graphene edge is embedded
The pulse meter of rice thin film optoelectronic transducer.
Background technology
Two-dimensional material（Such as graphene, molybdenum disulfide, black phosphorus）Because its have superior electron mobility, wide spectrum it is extensive
The advantages that absorbability, pliability and breakthrough dimension limit, there is the novel photoelectric of future generation biography turned into applied to wearable device
The potentiality of sensor material.However, the research to two-dimensional material photoresponse principle is still concentrated in two-dimensional surface at present, two are seldom considered
Tie up effect of the low coordination atom at edge played in photoelectric respone.Largely hamper height output, more fast-response, light
Compose the practicalization of the novel photoelectric sensor of imaging.The photoresponse rate for the wearable photoelectric sphyg instrument being widely used at present
Low, pulse photosignal is faint, the problem of stability difference.
Therefore, prior art has yet to be improved and developed.
The content of the invention
In view of above-mentioned the deficiencies in the prior art, received it is an object of the invention to provide one kind based on graphene edge is embedded
The pulse meter of rice thin film optoelectronic transducer, it is intended to which it is low to solve the photoresponse rate of wearable photoelectric sphyg instrument in the prior art, arteries and veins
Photosignal of fighting is faint, the problem of stability difference.
Technical scheme is as follows：
A kind of pulse meter based on the embedded nano thin-film photoelectric sensor of graphene edge, wherein, including：
Infrared light supply unit, for fix user's finger to be detected and launch specified wavelength infrared light it is to be detected to transmit
User's finger；
Photoelectric sensing unit, photosignal is produced for gathering infrared signal, and according to the infrared signal；The photoelectricity
The silicon substrate of sensing unit irradiates growth by ECR plasmas the embedded nano thin-film of graphene edge；Wherein, it is described
After the infrared transmission for the specified wavelength that infrared light supply unit is sent user's finger excessively to be detected, pass through the graphene edge
The photoelectron capture effect of the graphene edge quantum well of embedded nano thin-film produces photosignal；
Rectification amplifying unit, for photosignal to be carried out into rectification amplification, obtain rectification amplified signal；
Signal gathering unit, it is acquired and preserves for gathering the rectification amplified signal.
The pulse meter based on the embedded nano thin-film photoelectric sensor of graphene edge, wherein, the photoelectric sensing
Unit specifically includes：
P-type silicon substrate；
The embedded nano thin-film of graphene edge, the embedded nano thin-film of graphene edge irradiate p-type by ECR plasmas
Silicon substrate upper surface and be grown in the upper surface of P-type silicon substrate；
The thin finger-like gold titanium alloy electrode being arranged on the surface of the embedded nano thin-film of the graphene edge, the thin finger-like
Negative pole of the golden titanium alloy electrode as photoelectric sensing unit；
The golden titanium alloy electrode being arranged on the lower surface of the P-type silicon substrate, the golden titanium alloy electrode is as photoelectric sensing
The positive pole of unit；
The golden titanium alloy electrode and the thin finger-like gold titanium alloy electrode are by being bonded conductive lead wire and rectification amplifying unit
Connection.
The pulse meter based on the embedded nano thin-film photoelectric sensor of graphene edge, wherein, the infrared light supply
Unit specifically includes：
Infrared light supply, for launching the infrared light of specified wavelength；
Transmission-type finger stationary fixture, for fixing user's finger to be detected.
The pulse meter based on the embedded nano thin-film photoelectric sensor of graphene edge, wherein, the rectification amplification
Unit specifically includes：
Capacitance, the capacitance are connected by being bonded conductive lead wire with the thin finger-like gold titanium alloy electrode；
Three-level rectification operational amplifier, the three-level rectification operational amplifier are connected with the capacitance, are also led by bonding
Electrical lead is connected with the golden titanium alloy electrode.
The pulse meter based on the embedded nano thin-film photoelectric sensor of graphene edge, wherein, the signal acquisition
Unit specifically includes：
Analog signal output circuit, the analog signal output circuit are connected with the three-level rectification operational amplifier；
Analog/digital conversion circuit, the analog/digital conversion circuit are connected with the analog signal output circuit；
Digital signal output circuit, the digital signal output circuit are connected with the analog/digital conversion circuit；
Waveform K value analysis circuits, the waveform K values analysis circuit are connected with the analog signal output circuit；
Index output device, for export include heart rate, WBV, peripheral resistance, arterial compliance, atrial fibrillation alarm painstaking effort
Pipe health indicator information, the index output device are connected with the waveform K value analysis circuits.
The pulse meter based on the embedded nano thin-film photoelectric sensor of graphene edge, wherein, the infrared light supply
The wavelength of the infrared light of transmitting is 805nm.
The pulse meter based on the embedded nano thin-film photoelectric sensor of graphene edge, wherein, the thin finger-like gold
The thickness of titanium alloy electrode is 50nm, width is 60 μm, spacing is 256 μm.
The pulse meter based on the embedded nano thin-film photoelectric sensor of graphene edge, wherein, the golden titanium alloy
The thickness of electrode is 50nm.
The pulse meter based on the embedded nano thin-film photoelectric sensor of graphene edge, wherein, the photoelectric sensing
The silicon substrate of unit is induced with 50-200eV low-energy electron, and the thick graphite of 100nm is grown on the surface of silicon substrate
The embedded nano thin-film in alkene edge.
Pulse meter provided by the present invention based on the embedded nano thin-film photoelectric sensor of graphene edge, including：It is red
Outer light source unit, for fixing user's finger to be detected and launching the infrared light of specified wavelength to transmit user to be detected
Finger；Photoelectric sensing unit, photosignal is produced for gathering infrared signal, and according to infrared signal；Photoelectric sensing list
The silicon substrate of member irradiates growth by ECR plasmas the embedded nano thin-film of graphene edge；Wherein, infrared light supply list
After the infrared transmission for the specified wavelength that member is sent user's finger excessively to be detected, pass through the embedded nano thin-film of graphene edge
Graphene edge quantum well photoelectron capture effect produce photosignal；Rectification amplifying unit, for by photosignal
Rectification amplification is carried out, obtains rectification amplified signal；Signal gathering unit, it is acquired and protects for gathering rectification amplified signal
Deposit.The present invention utilizes capture of the border quantum well to light induced electron, can greatly reduce photo-generate electron-hole to answering
Close, improve photoresponse rate, the measurement to human body finger tip pulse signal is more precise and stable.
Brief description of the drawings
Fig. 1 is that the pulse meter of the present invention based on the embedded nano thin-film photoelectric sensor of graphene edge is preferably implemented
The structural representation of example.
Fig. 2 a are the photoelectric respone principle schematic of the embedded nano thin-film of graphene edge in the present invention.
Fig. 2 b are the performance test schematic diagram of the embedded nano thin-film of graphene edge in the present invention.
Fig. 3 is the K value index analysis schematic diagrames of pulse wave.
Fig. 4 a are the pulse analog signal output oscillogram for the female middle-aged that heart rate is 88 times/second.
Fig. 4 b are the pulse numeral signal output oscillogram for the female middle-aged that heart rate is 88 times/second.
Fig. 4 c are the pulse analog signal output oscillogram for the young man that heart rate is 61 times/second.
Fig. 4 d are the pulse numeral signal output oscillogram for the young man that heart rate is 61 times/second.
Embodiment
The present invention provides a kind of pulse meter based on the embedded nano thin-film photoelectric sensor of graphene edge, to make this hair
Bright purpose, technical scheme and effect are clearer, clear and definite, and the present invention is described in more detail below.It should be appreciated that herein
Described specific embodiment only to explain the present invention, is not intended to limit the present invention.
Fig. 1 is refer to, it is the pulse of the present invention based on the embedded nano thin-film photoelectric sensor of graphene edge
The structural representation of instrument preferred embodiment.As shown in figure 1, described be based on the embedded nano thin-film photoelectric sensor of graphene edge
Pulse meter, including：
Infrared light supply unit 100, for fix user's finger to be detected and launch specified wavelength infrared light it is to be checked to transmit
The user's finger of survey；
Photoelectric sensing unit 200, photosignal is produced for gathering infrared signal, and according to the infrared signal；It is described
The silicon substrate of photoelectric sensing unit 200 irradiates growth by ECR plasmas the embedded nano thin-film of graphene edge
220；Wherein, after the infrared transmission for the specified wavelength that the infrared light supply unit is sent user's finger excessively to be detected, pass through
The photoelectron capture effect of the graphene edge quantum well of the embedded nano thin-film of graphene edge produces photosignal；
Rectification amplifying unit 300, for photosignal to be carried out into rectification amplification, obtain rectification amplified signal；
Signal gathering unit 400, it is acquired and preserves for gathering the rectification amplified signal.
In embodiments of the invention, using plasma low-energy electron irradiation technique in silicon substrate（Such as cavity type conductive silicon
Substrate）Upper induced growth goes out the embedded nano thin-film of graphene edge, and light is obtained using ultraviolet photolithographic and more target as sputter technologies
Electric sensing unit 200；Described infrared light supply unit 100 and the wavelength of described photoelectric sensing unit 200 match；Infrared light
The infrared light finger tip that source unit 100 launches specified wavelength is gathered by photoelectric sensing unit 200, the profit of photoelectric sensing unit 200
Photosignal is produced with the photoelectron capture effect of the graphene edge quantum well in the embedded nano thin-film of graphene edge,
After the rectified amplifying unit 300 of the photosignal is handled, preservation is gathered by signal gathering unit 400, human body referred to so as to realize
The precise and stable measurement of sharp pulse signal and the output to cardiovascular health index.
Specifically, the silicon substrate of the photoelectric sensing unit 200 is induced with 50-200eV low-energy electron, in silicon substrate
The thick embedded nano thin-films 220 of graphene edge of 100nm are grown on the surface of plate.Namely utilize ecr plasma low energy
Electron irradiation technology, induced with 50eV to 200eV low-energy electron, the thick stones of 100nm are grown on the thick silicon substrates of 0.5mm
The black embedded nano thin-film 220 in alkene edge；The embedded nano thin-film 220 of described graphene edge is embedded in amorphous carbon-film
Substantial amounts of graphene nano-crystal, thus the graphene edge with VHD are grown, forms graphene edge quantum well.Due to
Capture ability of the graphene edge quantum well to electronics, the embedded nano thin-film 220 of graphene edge form nothing with silicon substrate
Need the natural P-N junction of extra electric field.
More specifically, using ECR argon plasmas as irradiation electron source, stone is grown in silicon substrate by d.c. sputtering
The black embedded nano thin-film 220 in alkene edge, induced growth graphene nano-crystal in carbon film is radiated at using low-energy electron.Change ECR
Ar pressure (109 ~ 1010cm of electron density between the Pa of 0.01 Pa ~ 0.1 in argon plasma-3), substrate bias exists
Between the V of+30V ~+300, graphene inlay induced growth is carried out in silicon substrate.It is inclined by adjusting ar pressure and substrate
Pressure changes charge density of electronic irradialion and kinetic energy, changes the size and marginal density of graphene nano-crystal.Utilize transmission electron microscope and Raman light
Spectrum researchs and analyses the forms such as graphene nano-crystal bonding pattern average layer inside dimension and stacking number.
Under the infrared light supply unit 100 of modulated signal, because graphene edge quantum well capturees photoelectron, greatly subtract
The compound of photo-generate electron-hole pair is lacked, including the photoelectric sensing unit 200 of the embedded nano thin-film 220 of graphene edge is produced
Raw periodic electric signal.
Preferably, as shown in figure 1, the photoelectric sensing unit 200 specifically includes：
P-type silicon substrate 210；
The embedded nano thin-film 220 of graphene edge, the embedded nano thin-film 220 of graphene edge pass through ECR plasmas
Irradiate the upper surface of P-type silicon substrate 210 and be grown in the upper surface of P-type silicon substrate 210；
The thin finger-like gold titanium alloy electrode 230 being arranged on the surface of the embedded nano thin-film 220 of the graphene edge, it is described
Dredge finger-like gold 230 negative pole as photoelectric sensing unit 200 of titanium alloy electrode；
The golden titanium alloy electrode 240 being arranged on the lower surface of the P-type silicon substrate 210, the golden conduct of titanium alloy electrode 240
The positive pole of photoelectric sensing unit 200；
The golden titanium alloy electrode 240 and the thin finger-like gold titanium alloy electrode 230 by be bonded conductive lead wire 500 with it is whole
Big unit 300 is banished to connect.
Specifically, using ultraviolet photolithographic technology and magnetron sputtering technique, on the embedded nano thin-film 220 of graphene edge
The thin finger-like gold titanium alloy electrode 230 that surface plates is used as negative pole, and the thick golden titanium alloys of 50nm are plated below P-type silicon substrate 210
Electrode 240 is used as positive pole.The thickness of the thin finger-like gold titanium alloy electrode 240 is 50nm, width is 60 μm, spacing is 256 μm.
Because the film of electronic induction growth has the conductive characteristic of n-type semiconductor in itself, therefore select P-type silicon substrate conduct
Contact material.Utilize the thin finger-like gold titanium of photoetching and vacuum evaporation on the surface of the embedded nano thin-film 220 of graphene edge
Alloy electrode 230 and it is plated in the golden titanium alloy electrode 240 that the lower surface of P-type silicon substrate 210 plates and forms photoelectric transducer element
200（As shown in Figure 1）.The effective area of the photoelectric respone of photoelectric transducer element 200 is 5mm × 5mm, and photon energy causes P
Valence-band electrons inside type silicon and graphene inlay are energized into conduction band, due to the introducing of graphene edge SQW, in electronics-sky
Cave is to before compound, the photoelectron inside P-type silicon and graphene inlay is captured rapidly by graphene edge SQW（Such as Fig. 2 a institutes
Show）, generate open-circuit voltage.The embedded nano thin-film 220 of graphene edge can produce photoelectric current, and promptly light can be opened and
Light closes carry out quick response.Measure open-circuit voltage, the photoproduction that photoelectric sensor is measured under the irradiation of the incident light of different wave length
Electric current and the reaction time to optical signal.As shown in Figure 2 b, the embedded nano thin-film sensing core of graphene edge of the invention
Piece can reach the response time of the responsiveness and 4 microseconds to 805nm near infrared lights 0.2A/W.
Preferably, as shown in figure 1, the infrared light supply unit 100 specifically includes：
Infrared light supply 110, for launching the infrared light of specified wavelength；
Transmission-type finger stationary fixture 120, for fixing user's finger to be detected.
Preferably, as shown in figure 1, the rectification amplifying unit 300 specifically includes：
Capacitance 310, the capacitance 310 is by being bonded conductive lead wire 500 and the thin finger-like gold titanium alloy electrode 230
Connection；
Three-level rectification operational amplifier 320, the three-level rectification operational amplifier 320 are connected with the capacitance 310, also logical
Bonding conductive lead wire 500 is crossed to be connected with the golden titanium alloy electrode 240.
Specifically, removing the direct current background in photosignal using capacitance 310, three-level rectification operational amplifier is utilized
Analog AC signal caused by 320 pairs of pulses is amplified, and the waveform of analog signal is exported.More specifically, it is described
Capacitance 310 is 10 μ F electrochemical capacitors；The model Microchip MCP6004 of the three-level rectification operational amplifier 320.
Preferably, as shown in figure 1, the signal gathering unit 400 specifically includes：
Analog signal output circuit 410, the analog signal output circuit are connected with the three-level rectification operational amplifier；
Analog/digital conversion circuit 420, the analog/digital conversion circuit 420 are connected with the analog signal output circuit 410；
Digital signal output circuit 430, the digital signal output circuit 430 are connected with the analog/digital conversion circuit 420；
Waveform K values analysis circuit 440, the waveform K values analysis circuit 440 are connected with the analog signal output circuit 410；
Index output device 450, include heart rate, WBV, peripheral resistance, arterial compliance, atrial fibrillation alarm for exporting
Cardiovascular health indication information, the index output device 450 are connected with the waveform K values analysis circuit 440.
Specifically, the model Analog Devices OP07 of the analog signal output circuit 410；The analog turns
Change the model Analog Devices AD7091 of circuit 420；The model Analog of the digital signal output circuit 430
Devices ADM483；The model Texas Instruments TMS320F2802x of the waveform K values analysis circuit 440
MCU；The model Analog Devices AD2403 of the index output device 450.
Utilize flip-flop circuit（Such as Texas Instruments CD40106BM）Analog AC signal is converted into numeral
Pulse signal, exported.Cardiovascular health index is exported using pulse wave K values analysis circuit.The heart is cardiovascular strong
Health indication information includes heart rate, WBV, peripheral resistance, arterial compliance, atrial fibrillation alarm.
As shown in figure 3, the algorithm of pulse K values and pulse diastolic pressures（PM）, pulse systolic pressure（PS）And average pulse
Pressure（PN）It is relevant.K values be actually a characteristic, reaction be sphygmogram shape facility.Studies have shown that pulse
Curve is more flat, and into steamed bun shape, K values are bigger 0.35 ~ 0.5, and cardiovascular status gets over aging；Motion can help sphygmogram shape
Shape becomes steep, K values to less than 0.3.
Pulse signal is mainly caused by the full of arterial blood, and reduced hemoglobin in blood（Hb）And oxyhemoglobin
（HbO2）Changes of contents will cause the change of light transmittance, when oxyhemoglobin and reduced hemoglobin are equal to the uptake of light
When, the intensity of transmitted light now can will relatively accurately reflect arteries and veins mainly as caused by arterial vascular contraction and diastole
Fight signal.Therefore, pulse voltage V and finger tip arteries pressure P are linear：
P=A*V+B （1）
Measured, it is respectively 6.15 and 75.8mmHg to draw A the and B values in the present invention.Measured, can obtained by pulse signal
Obtain K values.According to K values, heart rate can be obtained（PR）, WBV (V), peripheral resistance (TPR), the index such as arterial compliance (AC).By
This, analyzes, we can obtain corresponding cardio-vascular parameters according to pulse wave K values.Auricular fibrillation（Abbreviation atrial fibrillation）It is most normal
The perpetual arrhythmia seen, the instantaneous frequency rate of atrial impulses is up to 200% during atrial fibrillation.The present invention in line with forewarning function, when
When heart rate instantaneous rate of change is more than 50%, atrial fibrillation alarm will be awarded.
The pulse signal output example of the present invention is as shown in figures 4 a and 4b.Example 1 is that a heart rate is in 88 times/second
Year women（Fig. 4 a and Fig. 4 b）, height 164cm, body weight 61kg, analog signal（On）And data signal（Under）All measure
Stable pulse signal.Example 2 is the young man that a heart rate is 61 times/second（Fig. 4 c and Fig. 4 d）, height 182cm,
Body weight is 70kg.Analog signal and data signal have all measured stable pulse signal.The angiocarpy that two people can be obtained refers to
Mark and common people's average value ranges are respectively：
K values：0.343、 0.314、 0.28-0.35
Heart rate（PR）：88、61、 60-100
WBV (V)：3.92、3.59、 3.5-4.5
Atrial fibrillation alarm：Nothing, nothing, less than 50%
Peripheral resistance (TPR)：0.0156、0.0127 、0.01-0.018
Arterial compliance (AC)：1.64th, 2.77, more than 1.2
Above cardiovascular indicators carry out computing by single-chip microcomputer, are shown by index output device 450.
In summary, the pulse provided by the present invention based on the embedded nano thin-film photoelectric sensor of graphene edge
Instrument, including：Infrared light supply unit, treated for fixing user's finger to be detected and launching the infrared light of specified wavelength with transmiting
The user's finger of detection；Photoelectric sensing unit, photosignal is produced for gathering infrared signal, and according to infrared signal；
The silicon substrate of photoelectric sensing unit irradiates growth by ECR plasmas the embedded nano thin-film of graphene edge；Wherein,
After the infrared transmission for the specified wavelength that infrared light supply unit is sent user's finger excessively to be detected, it is embedded in by graphene edge
The photoelectron capture effect of the graphene edge quantum well of formula nano thin-film produces photosignal；Rectification amplifying unit, is used for
Photosignal is subjected to rectification amplification, obtains rectification amplified signal；Signal gathering unit, carried out for gathering rectification amplified signal
Gather and preserve.The present invention utilizes capture of the border quantum well to light induced electron, can greatly reduce light induced electron-sky
Compound, the raising photoresponse rate in cave pair, the measurement to human body finger tip pulse signal are more precise and stable.
It should be appreciated that the application of the present invention is not limited to above-mentioned citing, for those of ordinary skills, can
To be improved or converted according to the above description, all these modifications and variations should all belong to the guarantor of appended claims of the present invention
Protect scope.
Claims (9)
- A kind of 1. pulse meter based on the embedded nano thin-film photoelectric sensor of graphene edge, it is characterised in that including：Infrared light supply unit, for fix user's finger to be detected and launch specified wavelength infrared light it is to be detected to transmit User's finger；Photoelectric sensing unit, photosignal is produced for gathering infrared signal, and according to the infrared signal；The photoelectricity The silicon substrate of sensing unit irradiates growth by ECR plasmas the embedded nano thin-film of graphene edge；Wherein, it is described After the infrared transmission for the specified wavelength that infrared light supply unit is sent user's finger excessively to be detected, pass through the graphene edge The photoelectron capture effect of the graphene edge quantum well of embedded nano thin-film produces photosignal；Rectification amplifying unit, for photosignal to be carried out into rectification amplification, obtain rectification amplified signal；Signal gathering unit, it is acquired and preserves for gathering the rectification amplified signal.
- 2. the pulse meter according to claim 1 based on the embedded nano thin-film photoelectric sensor of graphene edge, its feature It is, the photoelectric sensing unit specifically includes：P-type silicon substrate；The embedded nano thin-film of graphene edge, the embedded nano thin-film of graphene edge irradiate p-type by ECR plasmas Silicon substrate upper surface and be grown in the upper surface of P-type silicon substrate；The thin finger-like gold titanium alloy electrode being arranged on the surface of the embedded nano thin-film of the graphene edge, the thin finger-like Negative pole of the golden titanium alloy electrode as photoelectric sensing unit；The golden titanium alloy electrode being arranged on the lower surface of the P-type silicon substrate, the golden titanium alloy electrode is as photoelectric sensing The positive pole of unit；The golden titanium alloy electrode and the thin finger-like gold titanium alloy electrode are by being bonded conductive lead wire and rectification amplifying unit Connection.
- 3. the pulse meter according to claim 2 based on the embedded nano thin-film photoelectric sensor of graphene edge, its feature It is, the infrared light supply unit specifically includes：Infrared light supply, for launching the infrared light of specified wavelength；Transmission-type finger stationary fixture, for fixing user's finger to be detected.
- 4. the pulse meter according to claim 2 based on the embedded nano thin-film photoelectric sensor of graphene edge, its feature It is, the rectification amplifying unit specifically includes：Capacitance, the capacitance are connected by being bonded conductive lead wire with the thin finger-like gold titanium alloy electrode；Three-level rectification operational amplifier, the three-level rectification operational amplifier are connected with the capacitance, are also led by bonding Electrical lead is connected with the golden titanium alloy electrode.
- 5. the pulse meter according to claim 3 based on the embedded nano thin-film photoelectric sensor of graphene edge, its feature It is, the signal gathering unit specifically includes：Analog signal output circuit, the analog signal output circuit are connected with the three-level rectification operational amplifier；Analog/digital conversion circuit, the analog/digital conversion circuit are connected with the analog signal output circuit；Digital signal output circuit, the digital signal output circuit are connected with the analog/digital conversion circuit；Waveform K value analysis circuits, the waveform K values analysis circuit are connected with the analog signal output circuit；Index output device, for export include heart rate, WBV, peripheral resistance, arterial compliance, atrial fibrillation alarm painstaking effort Pipe health indicator information, the index output device are connected with the waveform K value analysis circuits.
- 6. the pulse meter according to claim 2 based on the embedded nano thin-film photoelectric sensor of graphene edge, its feature It is, the wavelength of the infrared light of the infrared light supply transmitting is 805nm.
- 7. the pulse meter according to claim 2 based on the embedded nano thin-film photoelectric sensor of graphene edge, its feature It is, the thickness of the thin finger-like gold titanium alloy electrode is 50nm, width is 60 μm, spacing is 256 μm.
- 8. the pulse meter according to claim 2 based on the embedded nano thin-film photoelectric sensor of graphene edge, its feature It is, the thickness of the golden titanium alloy electrode is 50nm.
- 9. the pulse based on the embedded nano thin-film photoelectric sensor of graphene edge according to claim any one of 1-8 Instrument, it is characterised in that the silicon substrate of the photoelectric sensing unit is induced with 50-200eV low-energy electron, in silicon substrate The thick embedded nano thin-films of graphene edge of 100nm are grown on surface.
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| CN108784664A (en) * | 2018-06-28 | 2018-11-13 | 上海掌门科技有限公司 | Pulse diagnosing device based on pressure sensor and image capture device |
| CN109087991A (en) * | 2018-07-17 | 2018-12-25 | 深圳大学 | A kind of graphene nano-crystal carbon film and preparation method and application |
| CN110396661A (en) * | 2019-06-27 | 2019-11-01 | 深圳大学 | The method for adjusting ecr ion shot densities control graphene nano-crystal growing carbon film |
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