CN107332520A - A kind of biasing circuit and power amplification circuit - Google Patents
A kind of biasing circuit and power amplification circuit Download PDFInfo
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- CN107332520A CN107332520A CN201710606552.0A CN201710606552A CN107332520A CN 107332520 A CN107332520 A CN 107332520A CN 201710606552 A CN201710606552 A CN 201710606552A CN 107332520 A CN107332520 A CN 107332520A
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- 230000005611 electricity Effects 0.000 description 7
- 230000000694 effects Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0211—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the supply voltage or current
- H03F1/0216—Continuous control
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0261—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the polarisation voltage or current, e.g. gliding Class A
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
- H03F1/301—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in MOSFET amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
- H03F1/302—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in bipolar transistor amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/32—Modifications of amplifiers to reduce non-linear distortion
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
- H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/111—Indexing scheme relating to amplifiers the amplifier being a dual or triple band amplifier, e.g. 900 and 1800 MHz, e.g. switched or not switched, simultaneously or not
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
Abstract
The invention discloses a kind of biasing circuit, including tie point, the second branch road, current amplifier and switching switch；Wherein, the tie point, for by the first current distributing of input, and by the first branch current input power of first electric current；Second branch road, for inputting the current amplifier by the first current distributing of input, and by the second branch current of first electric current；The current amplifier, the second branch current for receiving first electric current, and will be exported after the second branch current amplification of first electric current as the bias current for the power amplifier being connected with the biasing circuit；The switching switch, for switching different resistances for the resistance in the tie point, and/or, it is that the resistance in second branch road switches different resistances.The invention also discloses a kind of power amplification circuit.
Description
Technical field
The present invention relates to electronic technology field, more particularly to a kind of biasing circuit and power amplification circuit.
Background technology
Multi-frequency multi-mode radio-frequency power amplifier is to the second generation (The 2nd Generation, 2G), the third generation (The
3rd Generation, 2G) or forth generation (The 4th Generation, 4G) mobile communication technology in radiofrequency signal carry out
During amplification, power amplifier needs to be operated in different states.Wherein, the power amplifier needs for being operated in 2G patterns are larger
Bias current, so that power amplifier is operated in class a audio power amplifier pattern, and then obtains preferable power output and the linearity；Work
Less bias current is needed in the power amplifier of 3G and 4G patterns, so that power amplifier is operated in class AB power amplifier mould
Formula, and then it is compatible with the linearity to obtain preferable efficiency.That is, the power amplification of the different mode such as compatibility 2G, 3G and 4G
Bias current when device is respectively provided with better performance under the different modes such as 2G, 3G and 4G is different.
As shown in figure 1, at present usually using the power amplification that fixed bias circuit is the different modes such as compatibility 2G, 3G and 4G
Device provides base bias current.The fixed bias circuit is fixed relative to the RF impedance of the base stage of power amplifier, so as to carry
The base current of supply power amplifier is fixed.Therefore, the power amplifier of the different mode such as compatible 2G, 3G and 4G can only be one
Optimal performance is realized under the pattern of kind.
The content of the invention
In view of this, the embodiment of the present invention provides a kind of biasing circuit and power amplification circuit, thinks compatible 2G, 3G and 4G
Power amplifier Deng different mode provides bias current of different sizes, improves the performance of power amplification circuit.
To reach above-mentioned purpose, what the technical scheme of the embodiment of the present invention was realized in：
The embodiments of the invention provide a kind of biasing circuit, the biasing circuit includes：
A kind of biasing circuit, the biasing circuit includes：Tie point, the second branch road, current amplifier and switching switch；
Wherein,
The tie point, for by the first current distributing of input, and by the first branch current of first electric current
Input power；
Second branch road, for by the first current distributing of input, and by the second branch current of first electric current
Input the current amplifier；
The current amplifier, for receiving second branch current, and will make after second branch current amplification
For the bias current output for the power amplifier being connected with the biasing circuit；
The switching switch, for switching different resistances for the resistance in the tie point, and/or, it is described the
Resistance in two branch roads switches different resistances.
In such scheme, the current amplifier includes transistor, the colelctor electrode of the transistor and the electricity of dc source
Source positive pole connection, the transistor connects after amplifying for second branch current that will be received as with the biasing circuit
The bias current output of the power amplifier connect.
In such scheme, the tie point includes first resistor；
The switching switch is in parallel with the first resistor, or, second branch road includes second resistance, the switching
Switch is in parallel with the second resistance.
In such scheme, the tie point includes first resistor, and second branch road includes second resistance；
The switching switch includes the first sub switch and the second sub switch, and first sub switch and the first resistor are simultaneously
Connection, second sub switch is in parallel with the second resistance.
In such scheme, the emitter stage of the transistor passes through 3rd resistor and the power amplification of the power amplification circuit
The base stage connection of device.
In such scheme, the tie point include along the first branch current direction forward direction series connection at least one two
Pole pipe.
In such scheme, the switching switch is one kind in HBT, MOSFET or HEMT.
In such scheme, the split point that the tie point is connected with second branch road by the first electric capacity with it is described
Connect power supply.
In such scheme, the diode is connected between the first resistor and the power supply ground, or, described first
Resistance is connected between the diode and the power supply ground.
The embodiment of the present invention additionally provides a kind of power amplification circuit, the power amplification circuit include power amplifier,
And the biasing circuit in above-mentioned technical proposal；Wherein,
The biasing circuit, is connected with the power amplifier, for the power amplifier input bias current；
The power amplifier, for being carried out the radiofrequency signal of input after corresponding enhanced processing according to the bias current
Output.
Biasing circuit and power amplification circuit that the embodiment of the present invention is provided, biasing circuit include current amplifier, cut
Change switch and for by the tie point and the second branch road of the first current distributing of input；Wherein, current amplifier receives first
Exported after being amplified after second branch current of electric current as the bias current for the power amplifier being connected with biasing circuit；Cut
Change switch and switch different resistances for the resistance in tie point or the second branch road.During using the program, switching is switched on
It can change the resistance of resistance in tie point or the second branch road with closure, be put so as to change the biasing circuit relative to power
The RF impedance of big device base stage, and the size that biasing circuit is supplied to the bias current of power amplifier is changed, improve work(
The performance of rate amplifying circuit.
Brief description of the drawings
Fig. 1 constitutes structural representation for the circuit of power amplification circuit in the prior art；
Fig. 2 constitutes structural representation for the circuit of the power amplification circuit of the embodiment of the present invention one；
Fig. 3 constitutes structural representation for the circuit of the power amplification circuit of the embodiment of the present invention two；
Fig. 4 constitutes structural representation for the circuit of the power amplification circuit of the embodiment of the present invention three；
Fig. 5 constitutes structural representation for the circuit of the power amplification circuit of the embodiment of the present invention four.
Embodiment
In embodiments of the present invention, biasing circuit includes tie point, the second branch road, current amplifier and switching switch；
Wherein, tie point, for by the first current distributing of input, and by the first branch current input power of the first electric current；
Second branch road, for by the first current distributing of input, and by the second branch current input current amplifier of the first electric current；Electricity
Stream amplifier, the second branch current for receiving the first electric current, and using after the amplification of the second branch current of the first electric current as
The bias current output for the power amplifier being connected with biasing circuit；Switching switch, for switching for the resistance in tie point
Different resistances, and/or, it is that the resistance in the second branch road switches different resistances.
So, when switching switch is in different unlatchings and closure state, the resistance of tie point or the second branch road is different,
Biasing circuit is different relative to the RF impedance of power amplifier base stage, and biasing circuit is supplied to the bias current of power amplifier
Size it is also different so that efficient, flexible realize control to power amplifier bias current so that compatible 2G, 3G and 4G etc.
The power amplifier of different mode is respectively provided with better performance under the different modes such as 2G, 3G and 4G.
In addition, using biasing circuit provided in an embodiment of the present invention radiofrequency signal can be caused different in the impedance of base stage,
Under 3G and 4G Broad-band Modulated Signal, when the impedance of the modulated signal of biasing circuit is smaller, be conducive to reducing the note of circuit
Recall effect, make under different mode state, radio-frequency performance is attained by most preferably.
In order to more fully hereinafter understand the features of the present invention and technology contents, below in conjunction with the accompanying drawings to the reality of the present invention
Now it is described in detail, appended accompanying drawing purposes of discussion only for reference, not for limiting the present invention.
Embodiment one
Fig. 2 is the circuit composition structural representation of biasing circuit in the embodiment of the present invention, as shown in Fig. 2 the present invention is implemented
Tie point and the second branch road in the biasing circuit that example is provided are connected to split point A.Tie point and the second branch road are by electric current
The electric current Ib that source is provided splits into the first branch current Ib1 and the second branch current Ib2.Tie point is connected with the second branch road
Split point A be connected by the first electric capacity C1 with power supply, C1 effect be for input biasing radio frequency reference is provided.
Tie point includes the electricity of two diode D1 and D2 and first along the forward direction series connection of the first branch current Ib1 directions
R1 is hindered, first resistor R1 is connected between diode D1 and D2 and power supply ground.First branch current Ib1 is inputted by tie point
Power supply.Wherein, first resistor R1 two ends are parallel with switching switch S1.Switching switch S1 can use HBT, MOSFET or HEMT etc.
Power device is realized.
Second branch current Ib2 inputs the transistor T1 acted on Current amplifier base stage by the second branch road.Crystal
Pipe T1 colelctor electrode is connected with dc source VBAT positive source, and transistor T1 is used for receive transistor T1 base stages the
Two branch current Ib2 amplify, afterwards as the bias current for the power amplifier M1 being connected with biasing circuit by transistor T1's
Emitter stage is exported.
As shown in Fig. 2 the emitter stage of transistor passes through 3rd resistor R3 and the base of the power amplifier of power amplification circuit
Pole is connected.
In biasing circuit provided in an embodiment of the present invention, the electric current that current source Ib is provided is Ib1 and Ib2 in node A punishment
Two parts, Ib2 by transistor T1 by Current amplifier be Ib2* β 1 after exported by radio-frequency resistance RFballast to power amplification
Device M1 base stage, the base bias current Ibase=Ib2* β 1 provided for power amplifier M1.In transistor T1 and diode D1
In the case of being fixed with D2 parameters, the size of Ib1 and Ib2 after node A shuntings are by resistance R1, R3 and RFballast institute
Determine.R1 is smaller, and R3 or RFballast are bigger, and Ib1 is bigger, and Ib2 is just smaller；R1 is bigger, and R3 or RFballast are smaller,
Ib1 is just smaller, and Ib2 is bigger.
Switching by switching switch S1 can change R1 resistance, and then change Ib2 size, and power is put with realizing
The control of big device M1 bias current.Specifically, in the case where R3 and RFballast parameter is all fixed, when S1 disconnects,
The resistance value of tie point is R1, and now Ib2 is maximum, can provide bias current for the power amplifier under 2G patterns；Work as S1
During closure, the resistance value of tie point is 0, and now Ib2 is minimum, can provide biasing for the power amplifier under 3G and 4G patterns
Electric current.
In addition, when S1 disconnects and closed, A point impedance can be different, so that under different mode, radiofrequency signal is in base stage
Impedance is different, and under 3G and 4G Broad-band Modulated Signal, the modulated signal impedance of biasing circuit is relatively low, is conducive to reducing circuit
Memory effect.
The biasing circuit that the embodiment of the present invention is provided, biasing circuit includes current amplifier, switching switch and for inciting somebody to action
The tie point and the second branch road of first current distributing of input；Wherein, current amplifier receives the second branch of the first electric current
Exported after being amplified after electric current as the bias current for the power amplifier being connected with biasing circuit；Switching switch is first
Resistance in road or the second branch road switches different resistances.During using the program, switching is switched on and closed and can change
The resistance of resistance in tie point or the second branch road, so as to change radio frequency of the biasing circuit relative to power amplifier base stage
Impedance, and the size that biasing circuit is supplied to the bias current of power amplifier is changed, improve the property of power amplification circuit
Energy.
Embodiment two
The embodiment of the present invention and embodiment one are similar, and difference is, as shown in figure 3, in the embodiment of the present invention, diode D1
And D2 is connected between first resistor R1 and power supply ground.
Identical with embodiment one, biasing circuit provided in an embodiment of the present invention is alternatively the different moulds such as compatible 2G, 3G and 4G
The power amplifier of formula provides bias current of different sizes, improves the performance of power amplification circuit.
Embodiment three
Fig. 4 is the circuit composition structural representation of biasing circuit in the embodiment of the present invention, as shown in figure 4, the present invention is implemented
Tie point and the second branch road in the biasing circuit that example is provided are connected to split point A.Tie point and the second branch road are by electric current
The electric current Ib that source is provided splits into the first branch current Ib1 and the second branch current Ib2.Tie point is connected with the second branch road
Split point A be connected by the first electric capacity C1 with power supply, C1 effect be for input biasing radio frequency reference is provided.
Tie point includes the electricity of two diode D1 and D2 and first along the forward direction series connection of the first branch current Ib1 directions
R1 is hindered, first resistor R1 is connected between diode D1 and D2 and power supply ground.First branch current Ib1 is inputted by tie point
Power supply.
Second branch road includes second resistance R2, and second resistance R2 two ends are parallel with switching switch S2.Switching switch S2 can be with
Realized with HBT, MOSFET or HEMT constant power device.
Second branch current Ib2 inputs the transistor T1 acted on Current amplifier base stage by the second branch road.Crystal
Pipe T1 colelctor electrode is connected with dc source VBAT positive source, and transistor T1 is used for receive transistor T1 base stages the
Two branch current Ib2 amplify, afterwards as the bias current for the power amplifier M1 being connected with biasing circuit by transistor T1's
Emitter stage is exported.
As shown in figure 4, the emitter stage of transistor passes through 3rd resistor R3 and the base of the power amplifier of power amplification circuit
Pole is connected.
In biasing circuit provided in an embodiment of the present invention, the electric current that current source Ib is provided is Ib1 and Ib2 in node A punishment
Two parts, Ib2 by transistor T1 by Current amplifier be Ib2* β 1 after exported by radio-frequency resistance RFballast to power amplification
Device M1 base stage, the base bias current Ibase=Ib2* β 1 provided for power amplifier M1.In transistor T1 and diode D1
In the case of being fixed with D2 parameters, the size of Ib1 and Ib2 after node A shuntings are by resistance R1, R2, R3 and RFballast
Determined.R1 is smaller, and R2, R3 or RFballast are bigger, and Ib1 is bigger, and Ib2 is just smaller；R1 is bigger, R2, R3 or
RFballast is smaller, and Ib1 is just smaller, and Ib2 is bigger.
Switching by switching switch S2 can change R2 resistance, and then change Ib2 size, and power is put with realizing
The control of big device M1 bias current.Specifically, in the case where R1, R3 and RFballast parameter are all fixed, when S2 closures
When, the resistance value of the second branch road is 0, and now Ib2 is maximum, can provide bias current for the power amplifier under 2G patterns；When
When S2 disconnects, the resistance value of the second branch road is R2, and now Ib2 is minimum, can be provided for the power amplifier under 3G and 4G patterns
Bias current.
In addition, when S2 disconnects and closed, A point impedance can be different, so that under different mode, radiofrequency signal is in base stage
Impedance is different, and under 3G and 4G Broad-band Modulated Signal, the modulated signal impedance of biasing circuit is relatively low, is conducive to reducing circuit
Memory effect.
Identical with embodiment one, biasing circuit provided in an embodiment of the present invention is alternatively the different moulds such as compatible 2G, 3G and 4G
The power amplifier of formula provides bias current of different sizes, improves the performance of power amplification circuit.
Example IV
Fig. 5 is the circuit composition structural representation of biasing circuit in the embodiment of the present invention, as shown in figure 5, the present invention is implemented
Tie point and the second branch road in the biasing circuit that example is provided are connected to split point A.Tie point and the second branch road are by electric current
The electric current Ib that source is provided splits into the first branch current Ib1 and the second branch current Ib2.Tie point is connected with the second branch road
Split point A be connected by the first electric capacity C1 with power supply, C1 effect be for input biasing radio frequency reference is provided.
Tie point includes the electricity of two diode D1 and D2 and first along the forward direction series connection of the first branch current Ib1 directions
R1 is hindered, first resistor R1 is connected between diode D1 and D2 and power supply ground.First branch current Ib1 is inputted by tie point
Power supply.First resistor R1 two ends are parallel with the first sub switch S1.First sub switch S1 can use HBT, MOSFET or HEMT etc.
Power device is realized.
Second branch road includes second resistance R2, and second resistance R2 two ends are parallel with the second sub switch S2.Second sub switch S2
It can be realized with HBT, MOSFET or HEMT constant power device.
Second branch current Ib2 inputs the transistor T1 acted on Current amplifier base stage by the second branch road.Crystal
Pipe T1 colelctor electrode is connected with dc source VBAT positive source, and transistor T1 is used for receive transistor T1 base stages the
Two branch current Ib2 amplify, afterwards as the bias current for the power amplifier M1 being connected with biasing circuit by transistor T1's
Emitter stage is exported.
As shown in figure 5, the emitter stage of transistor passes through 3rd resistor R3 and the base of the power amplifier of power amplification circuit
Pole is connected.
In biasing circuit provided in an embodiment of the present invention, the electric current that current source Ib is provided is Ib1 and Ib2 in node A punishment
Two parts, Ib2 by transistor T1 by Current amplifier be Ib2* β 1 after exported by radio-frequency resistance RFballast to power amplification
Device M1 base stage, the base bias current Ibase=Ib2* β 1 provided for power amplifier M1.In transistor T1 and diode D1
In the case of being fixed with D2 parameters, the size of Ib1 and Ib2 after node A shuntings are by resistance R1, R2, R3 and RFballast
Determined.R1 is smaller, and R2, R3 or RFballast are bigger, and Ib1 is bigger, and Ib2 is just smaller；R1 is bigger, R2, R3 or
RFballast is smaller, and Ib1 is just smaller, and Ib2 is bigger.
R1 and R2 resistance can be changed by the first sub switch S1 and the second sub switch S2 switching, and then change Ib2
Size, to realize the control of the bias current to power amplifier M1.Specifically, in R1, R2, R3 and RFballast ginseng
In the case that number is all fixed, when the first sub switch S1 disconnects and the second sub switch S2 is closed, the resistance value of tie point is R1,
The resistance value of second branch road is 0, and now Ib2 is maximum, can provide bias current for the power amplifier under 2G patterns；When first
When sub switch S1 is closed and the second sub switch S2 disconnects, the resistance value of tie point is 0, and the resistance value of the second branch road is R2, this
When Ib2 for minimum, bias current can be provided for the power amplifier under 3G and 4G patterns.
In addition, when the first sub switch S1 and the second sub switch S2 disconnect and closed, A point impedance can be different, from without
With under pattern, radiofrequency signal is different in the impedance of base stage, under 3G and 4G Broad-band Modulated Signal, the modulated signal of biasing circuit
Impedance is relatively low, is conducive to reducing the memory effect of circuit.
Identical with embodiment one, biasing circuit provided in an embodiment of the present invention is alternatively the different moulds such as compatible 2G, 3G and 4G
The power amplifier of formula provides bias current of different sizes, improves the performance of power amplification circuit.
Embodiment five
The embodiment of the present invention provides a kind of power amplification circuit, and power amplification circuit includes power amplifier and biasing
Circuit；Wherein,
Biasing circuit, is connected with power amplifier, for power amplifier input bias current；
Power amplifier, for being carried out the radiofrequency signal of input according to bias current exporting after corresponding enhanced processing.
Here, the biasing circuit can use the composition and function of the biasing circuit described in above-mentioned technical proposal, such as：
Biasing circuit as shown in Figure 2 can be used, specifically：
As shown in Fig. 2 the tie point and the second branch road in biasing circuit are connected to split point A.Tie point and second
The electric current Ib that current source is provided is split into the first branch current Ib1 and the second branch current Ib2 by branch road.
Tie point includes the electricity of two diode D1 and D2 and first along the forward direction series connection of the first branch current Ib1 directions
Hinder R1.First branch current Ib1 is by tie point input power.Wherein, first resistor R1 two ends are parallel with switching switch
S1。
Second branch current Ib2 inputs the transistor T1 acted on Current amplifier base stage by the second branch road.Crystal
Pipe T1 colelctor electrode is connected with dc source VBAT positive source, and transistor T1 is used for receive transistor T1 base stages the
Two branch current Ib2 amplify, afterwards as the bias current for the power amplifier M1 being connected with biasing circuit by transistor T1's
Emitter stage is exported.
Biasing circuit in the power amplification circuit that the embodiment of the present invention is provided include current amplifier, switching switch and
For by the tie point and the second branch road of the first current distributing of input；Wherein, current amplifier receives the of the first electric current
Exported after being amplified after two branch currents as the bias current for the power amplifier being connected with biasing circuit；Switching switch is
Resistance in tie point or the second branch road switches different resistances.During using the program, switching is switched on and closed can
To change the resistance of resistance in tie point or the second branch road, so as to change the biasing circuit relative to power amplifier base stage
RF impedance, and change the size that biasing circuit is supplied to the bias current of power amplifier, improve power amplification electricity
The performance on road.
The foregoing is only a preferred embodiment of the present invention, is not intended to limit the scope of the present invention.
Claims (10)
1. a kind of biasing circuit, it is characterised in that the biasing circuit includes：Tie point, the second branch road, current amplifier and
Switching switch；Wherein,
The tie point, for being inputted by the first current distributing of input, and by the first branch current of first electric current
Power supply；
Second branch road, for being inputted by the first current distributing of input, and by the second branch current of first electric current
The current amplifier；
The current amplifier, for receiving second branch current, and after second branch current is amplified as with
The bias current output of the power amplifier of the biasing circuit connection；
The switching switch, for switching different resistances for the resistance in the tie point, and/or, it is described second
Resistance in road switches different resistances.
2. biasing circuit according to claim 1, it is characterised in that the current amplifier includes transistor, the crystalline substance
The colelctor electrode of body pipe and the positive source of dc source are connected, and the transistor is used for second branch current that will be received
Exported after amplification as the bias current for the power amplifier being connected with the biasing circuit.
3. biasing circuit according to claim 1 or 2, it is characterised in that the tie point includes first resistor；
The switching switch is in parallel with the first resistor, or, second branch road includes second resistance, the switching switch
It is in parallel with the second resistance.
4. biasing circuit according to claim 1 or 2, it is characterised in that the tie point includes first resistor, described
Second branch road includes second resistance；
The switching switch includes the first sub switch and the second sub switch, and first sub switch is in parallel with the first resistor,
Second sub switch is in parallel with the second resistance.
5. biasing circuit according to claim 2, it is characterised in that the emitter stage of the transistor by 3rd resistor with
The base stage connection of the power amplifier of the power amplification circuit.
6. the biasing circuit according to claim 1,2 or 5 any one, it is characterised in that the tie point is included along institute
State at least one diode of the first branch current direction forward direction series connection.
7. the biasing circuit according to claim 1,2 or 5 any one, it is characterised in that the switching switch is HBT,
One kind in MOSFET or HEMT.
8. biasing circuit according to claim 6, it is characterised in that the tie point is connected with second branch road
Split point be connected by the first electric capacity with the power supply.
9. biasing circuit according to claim 6, it is characterised in that the diode is connected to the first resistor and institute
State between power supply ground, or, the first resistor is connected between the diode and the power supply ground.
10. a kind of power amplification circuit, it is characterised in that the power amplification circuit includes power amplifier and right will
Seek the biasing circuit described in 1 to 9 any one；Wherein,
The biasing circuit, is connected with the power amplifier, for the power amplifier input bias current；
The power amplifier, it is defeated after corresponding enhanced processing for being carried out the radiofrequency signal of input according to the bias current
Go out.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710606552.0A CN107332520B (en) | 2017-07-24 | 2017-07-24 | Bias circuit and power amplification circuit |
| PCT/CN2017/112171 WO2019019494A1 (en) | 2017-07-24 | 2017-11-21 | Bias circuit and power amplification circuit |
| US16/666,329 US11005423B2 (en) | 2017-07-24 | 2019-10-28 | Bias circuit and power amplification circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710606552.0A CN107332520B (en) | 2017-07-24 | 2017-07-24 | Bias circuit and power amplification circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107332520A true CN107332520A (en) | 2017-11-07 |
| CN107332520B CN107332520B (en) | 2024-03-19 |
Family
ID=60199854
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710606552.0A Active CN107332520B (en) | 2017-07-24 | 2017-07-24 | Bias circuit and power amplification circuit |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US11005423B2 (en) |
| CN (1) | CN107332520B (en) |
| WO (1) | WO2019019494A1 (en) |
Cited By (5)
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|---|---|---|---|---|
| WO2019019494A1 (en) * | 2017-07-24 | 2019-01-31 | 尚睿微电子（上海）有限公司 | Bias circuit and power amplification circuit |
| CN110690861A (en) * | 2018-07-05 | 2020-01-14 | 三星电机株式会社 | Multi-stage power amplifier with linear compensation function |
| CN110829981A (en) * | 2018-08-09 | 2020-02-21 | 三星电机株式会社 | Power amplifier device with improved response speed and bias circuit |
| CN116418315A (en) * | 2023-06-09 | 2023-07-11 | 尚睿微电子（上海）有限公司 | Filter temperature analog circuit |
| CN116436418A (en) * | 2023-06-09 | 2023-07-14 | 尚睿微电子（上海）有限公司 | Protection circuit and amplifying circuit |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116346107B (en) * | 2023-05-31 | 2023-08-11 | 广东工业大学 | HBT-based radio frequency switch |
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Also Published As
| Publication number | Publication date |
|---|---|
| WO2019019494A1 (en) | 2019-01-31 |
| US11005423B2 (en) | 2021-05-11 |
| US20200067456A1 (en) | 2020-02-27 |
| CN107332520B (en) | 2024-03-19 |
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