CN107331925A - Trapper chip - Google Patents
Trapper chip Download PDFInfo
- Publication number
- CN107331925A CN107331925A CN201710401343.2A CN201710401343A CN107331925A CN 107331925 A CN107331925 A CN 107331925A CN 201710401343 A CN201710401343 A CN 201710401343A CN 107331925 A CN107331925 A CN 107331925A
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- microstrip line
- microns
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- fan
- length
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/201—Filters for transverse electromagnetic waves
- H01P1/203—Strip line filters
- H01P1/2039—Galvanic coupling between Input/Output
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- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Control Of Motors That Do Not Use Commutators (AREA)
- Waveguides (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
The invention discloses a kind of trapper chip, it is related to technical field of integrated circuits；Including substrate；Also include transmission microstrip line X1, filtering microstrip line X2, filtering microstrip line X3, fan-shaped line S1 and the fan-shaped line S2 being produced on substrate；Signal input part input signal is divided into two-way, and signal input part first via connection transmission microstrip line X1 inputs, the tunnel of signal input part second connection filtering microstrip line X2 inputs, filtering microstrip line X2 output ends are connected with fan-shaped line S1；Transmission microstrip line X1 output end output signals are divided into two-way, and transmission microstrip line X1 output ends connect signal output part all the way, and another road connection filtering microstrip line X3 inputs of transmission microstrip line X1 output ends, filtering microstrip line X3 output ends are connected with fan-shaped line S2；Resistance to power capability is substantially improved, it is adaptable to high-power trapper, and 0.5dB is smaller than with interior Insertion Loss, meets engineering application.
Description
Technical field
The present invention relates to technical field of integrated circuits.
Background technology
Trapper is filtered out to noise signal unnecessary in microwave electron system, to eliminate garbage signal to useful letter
Number interference chip.In the case where ensureing that other frequency signals do not lose, effectively suppress a certain specific frequency in signal.
Microwave monolithic integrated circuit（MMIC）Manufacturing technology is existing frequently-used technology by substrate of GaAs, is to use plane
Technology, component, transmission line, interconnection line etc. are directly made on the semiconductor substrate.Patent of the present invention is based on the manufacturing technology,
It is filtered using band line on piece, design is convenient, and design accuracy is high, realizes fixed point trap, chip area is small, and cost is low, reliably
Property it is high, being adapted to miniaturized system uses, and system dimension and cost is greatly reduced.Meanwhile, GaAs chip batchs conformity of production is good,
Engineering is conducive to apply.
The existing resistance to power capability of trapper chip is not high, is unsuitable to apply on high-power trapper, big with interior Insertion Loss, no
Engineering application can be met, existing ceramic trapper size is big, in-convenience in use.
The content of the invention
The technical problem to be solved in the present invention is to be directed to above-mentioned the deficiencies in the prior art there is provided a kind of trapper chip, resistance to
Power capability is substantially improved, it is adaptable to high-power trapper, small with interior Insertion Loss, meets engineering application.
In order to solve the above technical problems, the technical solution used in the present invention is：Including substrate；It is characterized in that：Also wrap
Include the transmission microstrip line X1 being produced on substrate, filtering microstrip line X2, filtering microstrip line X3, fan-shaped line S1 and fan-shaped line S2；Letter
Number input input signal is divided into two-way, signal input part first via connection transmission microstrip line X1 inputs, signal input part the
Two tunnels connection filtering microstrip line X2 inputs, filtering microstrip line X2 output ends are connected with fan-shaped line S1；Transmit microstrip line X1 outputs
End output signal is divided into two-way, and transmission microstrip line X1 output ends connect signal output part all the way, and transmission microstrip line X1 output ends are another
Connection filtering microstrip line X3 inputs, filter microstrip line X3 output ends and are connected in fan-shaped line S2 all the way.
Preferably, substrate is GaAs, ceramics or PCB material.
Preferably, substrate is GaAs, GaAs dielectric constant 12.9,100 microns of thickness transmits microstrip line X1 length
For 1500-2000 microns, a width of 50 microns；Filter a length of 1500 microns, a width of 15 microns of microstrip line X2；Fan-shaped line S1 is a length of
160 microns, segment angle is 40 degree, and upper straight flange is 15 microns.
Preferably, substrate is ceramics, ceramic dielectric constant is 9.8, and thickness is 254 microns, transmits microstrip line X1 length
For 1700-2300 microns, a width of 230 microns；It is 1800 microns, a width of 25 microns to filter microstrip line X2 length；Fan-shaped line S1 length
For 200 microns, segment angle is 40 degree, and upper straight flange is 25 microns.
Preferably, substrate is PCB, PCB dielectric constants are 2.2, and thickness is 254 microns, and transmission microstrip line X1 length is
3800-4300 microns, a width of 750 microns；It is 3000 microns, a width of 50 microns to filter microstrip line X2 length；Fan-shaped line S1 is a length of
400 microns, segment angle is 40 degree, and upper straight flange is 50 microns.
Preferably, transmission microstrip line X1, filtering microstrip line X2, filtering microstrip line X3, fan-shaped line S1 and fan-shaped line S2 collection
Into on the same substrate.
It is using the beneficial effect produced by above-mentioned technical proposal：The present invention is simple in construction, is set using π type filter networks
Count into, monolithic trapper chip is at least operable with 50W systems, compared to LC traditional before, reinforced concrete structure trapper chip,
Resistance to power capability is substantially improved, it is adaptable to high-power trapper；0.5dB is smaller than with interior Insertion Loss simultaneously, much smaller than traditional trap
Device；The outer notch depth of two-stage wave invigorating network band is more than 30dB, meets engineering application.Compared to ceramic trapper, the present invention is specially
Profit possesses the advantages of frequency is high, size is small, notch depth is big, Insertion Loss is small, therefore for micro mation system, with important
Application value.
By adjusting transmission microstrip line X1 length and widths, band connection frequency adjustment, rectangular degree adjustment and impedance matching are carried out
Adjustment；By adjusting filtering microstrip line X2, X3 length and fan-shaped line S1, S2 area, notch band adjustment is carried out；By adjusting filter
The series of ripple micro-strip and fan-shaped line, carries out the notch depth regulation of trapper.
This chip device complete design in same chip is processed, it is a millimeter rank, is adapted to miniaturized system and uses, greatly
Width reduces system dimension.Meanwhile, when substrate is GaAs or other semi-conducting materials, using microwave monolithic integrated circuit
（MMIC）Manufacturing process, chip area reduces, and is adapted to mass application, and batch production uniformity is good, can while improving circuit
By property, production cost is reduced；When substrate is PCB or is ceramic, using Microwave Hybrid integrated technique, present design is equally fitted
With can improve circuit reliability, reduce production cost, resistance to power is strong；This programme is applied widely, it is adaptable to no
The substrate and different processing technologys of same material.
Brief description of the drawings
Fig. 1 is the schematic diagram of the present invention；
Fig. 2 is the structural representation of the present invention；
Fig. 3 transmits the notch filter circuit result curve figures of microstrip line X1 length for the difference of patent of the present invention；
Fig. 4 is the trap frequency curve of deviation figure of different X2, X3, S1, S2 length of patent of the present invention；
Fig. 5 is the circuit result curve figure that patent of the present invention uses different filter networks；
Graph of relation is lost for the Insertion Loss and clawback of patent of the present invention in Fig. 6；
Fig. 7 is the two-stage wave invigorating network of patent of the present invention and the circuit result curve figure of three stage notch；
Fig. 8 is the two-stage wave invigorating network chip photo and size of patent of the present invention；
Fig. 9 is the three-level wave invigorating network chip photo and size of patent of the present invention.
Embodiment
The present invention is further detailed explanation with reference to the accompanying drawings and detailed description.
As shown in figure 1, being a kind of functional diagram of trapper chip of the invention, in is signal input part, after signal input, warp
Two-stage or multistage wave invigorating network are crossed, the noise signal in transmission signal is filtered out, interference of the garbage signal to useful signal is eliminated,
Out is output port.
Embodiment 1：
Including substrate；Also including the transmission microstrip line X1 being produced on substrate, filtering microstrip line X2, filtering microstrip line X3, sector
Line S1 and fan-shaped line S2；Signal input part input signal is divided into two-way, and signal input part first via connection transmission microstrip line X1 is defeated
Enter end, the tunnel of signal input part second connection filtering microstrip line X2 inputs, filtering microstrip line X2 output ends are connected with fan-shaped line S1；
Transmission microstrip line X1 output end output signals are divided into two-way, and transmission microstrip line X1 output ends connect signal output part, transmitted all the way
Another road connection filtering microstrip line X3 inputs of microstrip line X1 output ends, filtering microstrip line X3 output ends are connected in fan-shaped line S2.
Transmission microstrip line X1, filtering microstrip line X2, filtering microstrip line X3, fan-shaped line S1 and fan-shaped line S2 are integrated in same lining
On bottom.Filtering microstrip line X2 and filtering microstrip line X3 length can be the same or different；Fan-shaped line S1 and fan-shaped line S2 areas
It can be the same or different.
The present invention adds fan-shaped line to constitute π type filter networks by multistage microstrip line, and it is it is critical that by adjusting transmission micro-strip
Line X1 length, carries out band connection frequency adjustment, rectangular degree adjustment and impedance matching adjustment；By adjusting filtering microstrip line X2, X3 length
Degree and fan-shaped line S1, S2 area, carry out notch band adjustment；By adjusting the series of filtering micro-strip and fan-shaped line, fallen into
The notch depth regulation of ripple device.
Compared with conventional microstrip filtering and fan filter principle, in patent of the present invention, fan-shaped line is added using micro-strip top
π type structures.Conventional microstrip line is filtered, and filtering is very long with Microstrip Length, is unfavorable for layout, wastes a large amount of chip sizes, band line
The long wave filtering wire that also results in is coupled with the presence of chip other parts, or own inductance is too high, and filter effect declines.Using sector
Line is filtered, and fan-shaped line compares microstrip line, and length is greatly reduced, but is due to that fan-shaped line is not easy to be bent, and takes a large amount of faces
Product, is also unfavorable for circuit layout, while on electrical property, fan-shaped line trap rectangular degree is poor, and pass band insertion loss is excessive.
Patent of the present invention takes tradeoff design, has taken into account both advantages, while electrical property is not sacrificed, has taken into account
Circuit size and layout：Patent of the present invention uses π type filter networks, and transmission microstrip line X1, filtering microstrip line X2, X3 are beneficial to curved
Song, under conditions of application is met, can also be replaced, because the too big inductance of power easily burns, so in power bar using inductance
Part can be replaced in the case of being adapted to inductance；Flexibility is had more in design, facilitates circuit layout；Adopt on open circuit microstrip line top
Fan-shaped cable architecture is used, fan-shaped line S1, S2 significantly reduce micro-strip line length, adds ground capacity compared on microstrip line X2, X3 tops,
Patent of the present invention is more suitably applied in high-power system.The trapper chip has size small, and Insertion Loss is small, and price is low, trap
Depth is big, and chip uniformity is good, the features such as resistance to power capability is strong.
Embodiment 2：
As described in Figure 2, filtering microstrip line X2, filtering microstrip line X3, fan-shaped line S1 and fan-shaped line S2 are integrated in same chip, are adopted
Patent of the present invention just can be realized with GaAs MMIC manufacturing process.
Transmit microstrip line X1, filtering microstrip line X2, filtering microstrip line X3, fan-shaped line S1 and fan-shaped line S2 attachment structures and reality
Apply example 1 identical.
Substrate is GaAs, and dielectric constant is 12.9, and GaAs thickness is 100 microns, and the gold for doing circuit is thick 4 microns；When
Trap frequency is 15GHz, and during 50 ohm of port Impedance, transmission microstrip line X1 length is 1500-2000 microns, and length preferably is
1700 microns, a width of 50 microns；Filter a length of 1500 microns, a width of 15 microns of microstrip line X2；A length of 160 microns of fan-shaped line S1,
The a length of upper straight flanges of fan-shaped line S1 are to the length on lower arc side, and segment angle is 40 degree, and upper straight flange is 15 microns.Filter microstrip line X3 and fan
Shape line S2 parameter is similar to filtering microstrip line X2 and fan-shaped line S1 parameter respectively, and concrete decision is in notch band bandwidth.
When substrate is GaAs or other semi-conducting materials, using microwave monolithic integrated circuit（MMIC）Manufacturing process,
Chip area reduces, and is adapted to mass application, and batch production uniformity is good, while improving circuit reliability, reduces production
Cost.
Transmission microstrip line X1 width mainly determines by material, filters microstrip line X2 length and fan-shaped line S1 areas into anti-
Than that can be obtained by calculating.Transmit microstrip line X1, filtering microstrip line X2 length influences larger to result.
By adjusting transmission microstrip line X1 length, the rectangular degree of pass band width and trapper can be adjusted, microstrip line is transmitted
The increase of X1 length, passband frequency band is to low frequency offset, and similarly, transmission microstrip line X1 length reduces, and passband frequency band, can to high frequency offset
Need according to requirement of engineering, choose suitable value.Fig. 3 give transmission microstrip line X1 different lengths circuit result, curve 1,
2nd, 3 be respectively with transmission microstrip line X1 reduce when, the result curve of trapper, as seen from the figure, with transmission microstrip line X1 length
Degree reduces, and passband improves to high frequency offset, trapper leading portion rectangular degree, and back segment rectangular degree is deteriorated.
By adjusting filtering microstrip line X2, X3 length, or fan-shaped line S1, S2 area can adjust notch band, X2,
The increase of X3 length, or the increase of S1, S2 area, trap frequency are on the contrary to high frequency offset toward low frequency offset.Fig. 4 give X2,
The circuit result of X3, S1, S2 different length, when curve 1,2,3 respectively increases with X2, X3, S1, S2, the result of trapper
Curve, as seen from the figure, with the increase of filtering microstrip line X1, X2 length, the increase of fan-shaped line S1, S2 area, trap frequency is to low frequency
Skew.
Fig. 5 gives similar frequency bands, using the result curve of different filter networks, and curve 1,2,3 is respectively to use in figure
Fan-shaped line, open circuit microstrip line and using this use new result curve.It is as seen from the figure, optimal using fan-shaped line trap performance,
But rectangular degree is poor；It is similar with the result of patent of the present invention using open circuit microstrip line.
Fig. 6 gives trapper Insertion Loss curve and reflection coefficient of port damage curve, from return loss plot, and the present invention is specially
Profit is reflection-type circuit, is filtered using signal reflex.
Fig. 7 gives the result curve of two stage filter network and three-level filtering network, and curve 1,2 is respectively two stage notch nets
The result curve of network and three-level wave invigorating network.As seen from the figure, three-level wave invigorating network notch depth is significantly larger than two-level network.But
It is to compare two-level network, three-level network can also increase chip size.
Fig. 8 gives patent of the present invention using microwave monolithic manufacturing process, the two-stage wave invigorating network chip knot manufactured and designed
Structure and size.
Fig. 9 gives patent of the present invention using microwave monolithic manufacturing process, the three-level wave invigorating network chip knot manufactured and designed
Structure and size.
Based on substrate be GaAs, using microwave integrated circuit technological design manufacture complete, reduce circuit size and into
This, while improving the yield rate and uniformity of batch production, more facilitates system to use, improves system reliability.
Embodiment 3：
Transmit microstrip line X1, filtering microstrip line X2, filtering microstrip line X3, fan-shaped line S1 and fan-shaped line S2 attachment structures and embodiment
1 is identical.
Substrate is ceramics, and dielectric constant is 9.8, and ceramic thickness is 254 microns, and the golden thickness for doing circuit is 4 microns；When sunken
Wave frequency rate is 15GHz, and during 50 ohm of port Impedance, transmission microstrip line X1 length is 1700-2300 microns, and length preferably is
2000 microns, a width of 230 microns；It is 1800 microns, a width of 25 microns to filter microstrip line X2 length；Fan-shaped line S1 a length of 200 is micro-
Rice, the length of a length of upper straight flanges of fan-shaped line S1 to lower arc side, segment angle is 40 degree, and upper straight flange is 25 microns.Filter microstrip line X3
Similar to filtering microstrip line X2 and fan-shaped line S1 parameter respectively with fan-shaped line S2 parameter, concrete decision is in notch band band
It is wide.
Transmission microstrip line X1 width is mainly determined by material, for various substrates material, when port Impedance is 50 ohm
When, line width is different；Filtering microstrip line X2 and fan-shaped line S1 is inversely proportional, and can be obtained by calculating.Transmission microstrip line X1, filtering are micro-
Band line X2 length influences larger to result.
Embodiment 4：
Transmit microstrip line X1, filtering microstrip line X2, filtering microstrip line X3, fan-shaped line S1 and fan-shaped line S2 attachment structures and embodiment
1 is identical.
Substrate is PCB, and dielectric constant is that 2.2, PCB thickness is 254 microns, and the golden thickness for doing circuit is 4 microns；Work as trap
Frequency is 15GHz, and during 50 ohm of port Impedance, transmission microstrip line X1 length is 3800-4300 micron, and length preferably is 4000
Micron, a width of 750 microns；It is 3000 microns, a width of 50 microns to filter microstrip line X2 length；A length of 400 microns of fan-shaped line S1, fan
The a length of upper straight flanges of shape line S1 are to the length on lower arc side, and segment angle is 40 degree, and upper straight flange is 50 microns.Filter microstrip line X3 and sector
Line S2 parameter is similar with fan-shaped line S1 parameter respectively at filtering microstrip line X2, and concrete decision is in notch band bandwidth.
Transmission microstrip line X1 width is mainly determined that filtering microstrip line X2 and fan-shaped line S1 is inversely proportional, by meter by material
Calculation can be obtained.Transmit microstrip line X1, filtering microstrip line X2 length influences larger to result.
When substrate is PCB or is ceramic, using Microwave Hybrid integrated technique, present design is equally applicable, can improve
Circuit reliability, reduces production cost, resistance to power is strong.
Substrate is not limited to GaAs, ceramics or PCB material or other materials.This programme is applied widely,
Substrate and different processing technologys suitable for different materials.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all essences in the present invention
Any modifications, equivalent substitutions and improvements made within refreshing and principle etc., should be included in the scope of the protection.
Claims (6)
1. a kind of trapper chip, including substrate；It is characterized in that：Also include transmission microstrip line X1, the filter being produced on substrate
Ripple microstrip line X2, filtering microstrip line X3, fan-shaped line S1 and fan-shaped line S2；Signal input part input signal is divided into two-way, and signal is defeated
Enter to hold first via connection transmission microstrip line X1 inputs, the tunnel of signal input part second connection filtering microstrip line X2 inputs, filtering
Microstrip line X2 output ends are connected with fan-shaped line S1；Transmission microstrip line X1 output end output signals are divided into two-way, transmission microstrip line X1
Output end connects signal output part, another road connection filtering microstrip line X3 inputs of transmission microstrip line X1 output ends, filtering all the way
Microstrip line X3 output ends are connected with fan-shaped line S2.
2. trapper chip according to claim 1, it is characterised in that the substrate is GaAs, ceramics or PCB material.
3. trapper chip according to claim 2, it is characterised in that the substrate is GaAs, GaAs dielectric constant
12.9,100 microns of thickness, when trap frequency is 15GHz, 50 ohm of port Impedance, transmission microstrip line X1 length is 1500-
2000 microns, a width of 50 microns；Filter a length of 1500 microns, a width of 15 microns of microstrip line X2；A length of 160 microns of fan-shaped line S1,
Segment angle is 40 degree, and upper straight flange is 15 microns.
4. trapper chip according to claim 2, it is characterised in that the substrate is ceramics, ceramic dielectric constant is
9.8, thickness is 254 microns, and when trap frequency is 15GHz, 50 ohm of port Impedance, transmission microstrip line X1 length is 1700-
2300 microns, a width of 230 microns；It is 1800 microns, a width of 25 microns to filter microstrip line X2 length；Fan-shaped line S1 a length of 200 is micro-
Rice, segment angle is 40 degree, and upper straight flange is 25 microns.
5. trapper chip according to claim 2, it is characterised in that the substrate is PCB, PCB dielectric constants are 2.2,
Thickness is 254 microns, and when trap frequency is 15GHz, 50 ohm of port Impedance, transmission microstrip line X1 length is 3800-4300
Micron, a width of 750 microns；It is 3000 microns, a width of 50 microns to filter microstrip line X2 length；A length of 400 microns of fan-shaped line S1, fan
Shape angle is 40 degree, and upper straight flange is 50 microns.
6. trapper chip according to claim 1, it is characterised in that the transmission microstrip line X1, filtering microstrip line X2,
Filter microstrip line X3, fan-shaped line S1 and fan-shaped line S2 integrated on the same substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710401343.2A CN107331925A (en) | 2017-05-31 | 2017-05-31 | Trapper chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710401343.2A CN107331925A (en) | 2017-05-31 | 2017-05-31 | Trapper chip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107331925A true CN107331925A (en) | 2017-11-07 |
Family
ID=60192904
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710401343.2A Pending CN107331925A (en) | 2017-05-31 | 2017-05-31 | Trapper chip |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107331925A (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1529410A (en) * | 2002-09-10 | 2004-09-15 | 松下电器产业株式会社 | Bandstop filter, filter device, antenna duplexer and communication device |
| CN101599571A (en) * | 2008-06-02 | 2009-12-09 | 鸿富锦精密工业（深圳）有限公司 | Directional coupler |
| CN101938022A (en) * | 2010-07-22 | 2011-01-05 | 成都九洲迪飞科技有限责任公司 | Adjustable band elimination filter |
| CN202977667U (en) * | 2012-11-22 | 2013-06-05 | 成都九洲迪飞科技有限责任公司 | High out-of-band rejection ultra-wideband filter |
| CN103151588A (en) * | 2013-02-27 | 2013-06-12 | 西安电子工程研究所 | Micro wave and micro band band-pass filter for miniature and ultra-width stop band |
| CN103259501A (en) * | 2013-05-31 | 2013-08-21 | 电子科技大学 | Band elimination filter for communication system |
-
2017
- 2017-05-31 CN CN201710401343.2A patent/CN107331925A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1529410A (en) * | 2002-09-10 | 2004-09-15 | 松下电器产业株式会社 | Bandstop filter, filter device, antenna duplexer and communication device |
| CN101599571A (en) * | 2008-06-02 | 2009-12-09 | 鸿富锦精密工业（深圳）有限公司 | Directional coupler |
| CN101938022A (en) * | 2010-07-22 | 2011-01-05 | 成都九洲迪飞科技有限责任公司 | Adjustable band elimination filter |
| CN202977667U (en) * | 2012-11-22 | 2013-06-05 | 成都九洲迪飞科技有限责任公司 | High out-of-band rejection ultra-wideband filter |
| CN103151588A (en) * | 2013-02-27 | 2013-06-12 | 西安电子工程研究所 | Micro wave and micro band band-pass filter for miniature and ultra-width stop band |
| CN103259501A (en) * | 2013-05-31 | 2013-08-21 | 电子科技大学 | Band elimination filter for communication system |
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| 刘建清等: "陷波器", 《从零开始学电路基础》 * |
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Application publication date: 20171107 |