CN107329850A - It is a kind of to meet memory and date storage method that magnanimity reads and writes number of operations - Google Patents
It is a kind of to meet memory and date storage method that magnanimity reads and writes number of operations Download PDFInfo
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- CN107329850A CN107329850A CN201710385008.8A CN201710385008A CN107329850A CN 107329850 A CN107329850 A CN 107329850A CN 201710385008 A CN201710385008 A CN 201710385008A CN 107329850 A CN107329850 A CN 107329850A
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F11/00—Error detection; Error correction; Monitoring
- G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
- G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
- G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
- G06F11/1004—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's to protect a block of data words, e.g. CRC or checksum
Abstract
Memory and date storage method that magnanimity reads and writes number of operations are met the invention provides a kind of, the memory of the completely the same initial data sub-district of data structure contents and Backup Data sub-district is included by devising, digital independent is performed when using, information is exported to internal memory, when receiving writing events, whether the data that memory first compares in the data and memory of internal memory are changed, and write operation is then performed in the event of changing.The present invention takes that two-region redundancy technique meets power down or other fortuitous event data are not lost, and the read-write operation of mass data is met using virtual multi-region rotation, it is therefore prevented that repetition is write, and extends access times.
Description
Technical field
The present invention relates to field of storage, more particularly to a kind of memory and data storage for meeting magnanimity read-write number of operations
Method.
Background technology
With developing rapidly for science and technology, networked devices are more and more, and equipment is more and more intelligent, between the Internet of things era equipment
Connection is interacted with each other, the reading and write operation to networked devices become very frequently, and high performance memory has widely
Demand.
Following demand is mainly met for the memory of internet of things equipment：Certain service life, reading and write operation
Frequent and power down or other unexpected reset data are not lost.The storage performance of current general memory on the market, be usually
Epprom 1000000 times, flash 100000 times, for digital independent more than ten million rank, write, on current market
Memory can not meet, it is seen that a kind of common access method need to be designed and meet requirements above.
The content of the invention
To overcome problem of the prior art, the present invention provides a kind of memory and data for meeting magnanimity read-write number of operations
Storage method, digital independent that can be more than the rank of numeral ten million, write-in frequent operation, and power down or other unexpected reset numbers
According to not losing.
The technical proposal for solving the technical problem of the invention is：It is a kind of to meet the storage that magnanimity reads and writes number of operations
Device, the memory includes multiple logic areas, the logic area by the completely the same initial data sub-district of data structure contents and
Backup Data sub-district is constituted, for operationally backuping each other and recovering；
The initial data sub-district includes storage control zone and data storage area；
The storage control zone includes mask field, CRC16 check fields, access times field.
The mask field is fixed sequence, for carrying out overflow checking, the mask field to write-in data length
On the head of the data structure of logic area.
The CRC16 check fields are used to store validity check.
Further, the initial data sub-district and Backup Data sub-district are independent page, sector or full storage medium,
For preventing while damaging.
A kind of date storage method realized based on the memory, its step is included：
1）Electricity completes memory initialization on memory, performs digital independent, information is exported to internal memory；
2）The pending data writing events states such as memory entrance；
3）If receiving writing events, whether the data that memory first compares in the data and memory of internal memory change；
4）If data change, write operation is performed；Without write-in if not changing.
The step 1）In, the execution digital independent includes：
Memory reads data from last area of logic area；
Verified by CRC16 check fields and mask field and judge whether original sub-district and backup sub-district are effective；
Change to next area and re-read if two sub-districts are invalid；If two sub-districts are effective, the big area of access times is chosen
New sub-district is backuped in old sub-district；If there is a sub-district effectively, effective sub-district is backuped in invalid sub-district.
During being verified using mask field, when writing excessive data or logic error, then mask field will
Data storage is covered as, if variable store detects mask field and write that data are excessive or logic by unexpected modification i.e. explanation
Mistake simultaneously notifies user to carry out abnormality processing.
The step 3）In, data and the storage of internal memory are judged by the access times of relatively more original sub-district and backup sub-district
Whether the data of device change.
The step 4）Before write operation is performed, judge the write-in number of times in current logic area whether up to specified write-in time
Number.
The step 4）In, the execution write operation step includes：
Inquire about the read-write number of times in current logic area；
Whether decision logic area data write-in access times reach predetermined number of times, are changed if reaching to next logic area, if not
Arrival is then kept；
Backup sub-district and original sub-district are write data into, validity is verified by CRC and mask；
Write and complete if twoth area are effective, change to next area and re-write if invalid.
The step 4）In, after write operation is performed, update access times.
Beneficial effects of the present invention are mainly shown as：The completely the same original number of data structure contents is included by devising
According to the memory of sub-district and Backup Data sub-district, digital independent is performed when using, information is exported to internal memory, when receiving write-in thing
During part, whether the data that memory first compares in the data and memory of internal memory change, and are write in the event of changing then to perform
Enter operation.Take that two-region redundancy technique meets power down or other fortuitous event data are not lost, met using virtual multi-region rotation
The read-write operation of mass data, it is therefore prevented that repetition is write, and extends access times.
Brief description of the drawings
Fig. 1 is the structure chart for the memory for meeting magnanimity read-write number of operations that the present invention is provided；
Fig. 2 is the flow chart for the memory overall operation logic that the present invention is provided；
Fig. 3 is the flow chart that method for reading data is realized based on memory that the present invention is provided；
Fig. 4 is the flow chart that method for writing data is realized based on memory that the present invention is provided.
Embodiment
The present invention is described in further detail with embodiment below in conjunction with the accompanying drawings.
It is the knot for the memory for meeting magnanimity read-write number of operations that embodiments in accordance with the present invention are provided referring to the drawings 1
Composition.
Memory includes n logic area 101, and the logic area 101 is by initial data sub-district 102 and Backup Data sub-district
The data structure contents of 103 compositions, initial data sub-district 102 and Backup Data sub-district 103 are completely the same, for operationally mutual
To back up and recovering；
The actual physical address mapping of initial data sub-district 102 is page, sector or the full storage medium of physical storage
104, the actual physical address mapping of Backup Data sub-district 103 is page, sector or the full storage medium of physical storage
105, page, the page of sector or full storage medium 104 and physical storage, sector or the full storage of physical storage are situated between
Both are separate for matter 105, for preventing both from damaging simultaneously；
Initial data sub-district 102 includes storage control zone 106 and data storage area 107, and storage control zone 106 is used for control data
Read-write and inspection；
Storing control zone 106 includes mask field 108, CRC16 check fields 109, access times field 110, mask field
108 be fixed sequential value, on the head of logic area data structure, for carrying out overflow checking, CRC16 to write-in data length
Check field 109 is used to store validity check.
Fig. 2 is the flow chart of memory overall operation logic.
S201, memory is first powered up completing memory initialization；
S202, performs digital independent and the information in memory is exported into internal memory；
S203, memory judge complete digital independent after, into etc. pending data writing events state；
Also include memory state field in the storage control zone in memory logic area, when memory state field is set to 0,
Memory logic area can not be written into, when memory state field is set to 1, memory will enter etc. pending data writing events
State, logic area can be now written into.When memory judge complete digital independent after, then can will when memory state field from
0 is set to 1.
S204, if receiving writing events, whether the data that memory first compares in the data and memory of internal memory occur
Change.
Judge whether the data of internal memory and the data of memory change, be by relatively more original sub-district and backup sub-district
Access times realize.
S205, if data change, performs write operation；Without write-in if not changing.
Fig. 3 is the flow chart that method for reading data is realized based on memory.
S301, reads sub-district data since last area of logic area；
S302, reads the mask field and CRC16 check fields in the original sub-district and backup sub-district in current logic area；
S303, judges whether original sub-district and backup sub-district are effective according to mask field and CRC16 check fields, if two
Sub-district is invalid, then gives up current logic area, is re-read from next logic area, goes to step S301；If in two sub-districts
There is a sub-district effectively, then go to step S304；If two sub-districts are effective, step S305 is gone to；
Mask field is fixed sequential value, and being, for example, can be with 16 bit binary data.
During being verified using mask field, when writing excessive data or logic error, then mask field will
Data storage is covered as, if variable store detects mask field and write that data are excessive or logic by unexpected modification i.e. explanation
Mistake simultaneously notifies user to carry out abnormality processing.
S304, invalid sub-district is backuped to from effective sub-district；
By through examining the data cover in effective sub-district into invalid sub-district.
S305, the access times of relatively more original sub-district and backup sub-district；
S306, the small sub-district of access times is backuped to by the big sub-district of access times, recovers latest data；
S307, completes export data.
Fig. 4 is the flow chart that method for writing data is realized based on memory.
S401, the read-write number of times in inquiry current logic area；
S402, judges whether data write-in access times reach the predetermined number of times of logic area, if having reached the access times upper limit
Step S403 is then gone to, step S404 is gone to if the access times upper limit is not reaching to；
S403, is changed to next logic area, and go to step S401；
S404, writes data into backup sub-district and original sub-district；
S405, reads the CRC16 fields and mask field in sub-district, write-in validity is verified by CRC16 and mask；
S406, writes if twoth area are effective and completes, change to next logic area and re-write if invalid, and go to step
403。
Above-described embodiment is used for that the invention will be further described, but does not limit the invention to these specific embodiment parties
Formula.One skilled in the art would recognize that all alternative present invention encompasses what is potentially included in Claims scope
Scheme, improvement project and equivalents.
Claims (10)
1. a kind of meet the memory that magnanimity reads and writes number of operations, it is characterised in that the memory includes：
Multiple logic areas, the logic area includes the completely the same initial data sub-district of data structure contents and Backup Data
Area, can backup each other and recover between initial data sub-district and Backup Data sub-district；
The initial data sub-district includes storage control zone and data storage area；
The storage control zone includes mask field, CRC16 check fields, access times field.
2. a kind of memory for meeting magnanimity read-write number of operations as claimed in claim 1, it is characterised in that the mask word
Section is fixed sequence, for carrying out overflow checking, data structure of the mask field in logic area to write-in data length
Head, the CRC16 check fields be used for store validity check.
3. a kind of memory for meeting magnanimity read-write number of operations as claimed in claim 1, it is characterised in that the original number
It is independent page, sector or full storage medium according to sub-district and the Backup Data sub-district, for preventing while damaging.
4. a kind of meet the date storage method that magnanimity reads and writes number of operations, the date storage method is based on claim 1-3 institutes
The memory stated, and comprise the following steps：
1）Electricity completes memory initialization on memory, performs digital independent, information is exported to internal memory；
2）The pending data writing events states such as memory entrance；
3）If receiving writing events, whether the data that memory first compares in the data and memory of internal memory change；
4）If data change, write operation is performed；Without write-in if not changing.
5. date storage method as claimed in claim 4, it is characterised in that the step 1）In, the execution digital independent
Including：
Memory reads data from last area of logic area；
Verified by CRC16 check fields and mask field and judge initial data sub-district and whether Backup Data sub-district has
Effect；
Change to next area and re-read if initial data sub-district and Backup Data sub-district are invalid；If initial data sub-district and
Backup Data sub-district is effective, then chooses the big area of access times and backup to new sub-district in old sub-district；If there is original data
One in area and Backup Data sub-district effectively, then backups to effective sub-district in invalid sub-district.
6. date storage method as claimed in claim 5, it is characterised in that in the process verified using mask field
In, when writing excessive data or logic error, then mask field will be covered as data storage, if variable store is detected
Mask field writes excessive data or logic error by unexpected modification i.e. explanation and notifies user to carry out abnormality processing.
7. date storage method as claimed in claim 4, it is characterised in that the step 3）In, by comparing initial data
The access times of sub-district and Backup Data sub-district judge whether the data of internal memory and the data of memory change.
8. date storage method as claimed in claim 4, it is characterised in that the step 4）Before write operation is performed, sentence
Whether the write-in number of times in disconnected current logic area is up to specified write-in number of times.
9. date storage method as claimed in claim 4, it is characterised in that the step 4）In, the execution write operation
Step includes：
Inquire about the read-write number of times in current logic area；
Whether decision logic area data write-in access times reach predetermined number of times, are changed if reaching to next logic area, if not
Arrival is then kept；
Backup Data sub-district and initial data sub-district are write data into, validity is verified by CRC and mask；
Write and complete if twoth area are effective, change to next area and re-write if invalid.
10. date storage method as claimed in claim 4, it is characterised in that the step 4）In, when execution write operation
Afterwards, access times are updated.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201710385008.8A CN107329850B (en) | 2017-05-26 | 2017-05-26 | Memory satisfying mass read-write frequency operation and data storage method |
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| CN201710385008.8A CN107329850B (en) | 2017-05-26 | 2017-05-26 | Memory satisfying mass read-write frequency operation and data storage method |
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Cited By (3)
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| CN108459930A (en) * | 2018-04-02 | 2018-08-28 | 深圳臻迪信息技术有限公司 | Data back up method, device and storage medium |
| CN111984457A (en) * | 2019-05-23 | 2020-11-24 | 华为技术有限公司 | Method and device for updating storage information |
| CN112215986A (en) * | 2020-09-09 | 2021-01-12 | 苏州工业园区凌志软件股份有限公司 | Internet of things control system and method of intelligent lock |
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| CN107329850B (en) | 2021-05-14 |
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