CN107328137B - Solid refrigerator based on positive and negative elastic thermal effect of ferroelectric film - Google Patents
Solid refrigerator based on positive and negative elastic thermal effect of ferroelectric film Download PDFInfo
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- CN107328137B CN107328137B CN201610738519.9A CN201610738519A CN107328137B CN 107328137 B CN107328137 B CN 107328137B CN 201610738519 A CN201610738519 A CN 201610738519A CN 107328137 B CN107328137 B CN 107328137B
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F25—REFRIGERATION OR COOLING; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS; MANUFACTURE OR STORAGE OF ICE; LIQUEFACTION SOLIDIFICATION OF GASES
- F25B—REFRIGERATION MACHINES, PLANTS OR SYSTEMS; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS
- F25B21/00—Machines, plants or systems, using electric or magnetic effects
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B30/00—Energy efficient heating, ventilation or air conditioning [HVAC]
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- Inorganic Insulating Materials (AREA)
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Abstract
The invention discloses a solid refrigerator based on positive and negative elastic thermal effects of a ferroelectric film, which is characterized in that: the ferroelectric thin film heat dissipation device comprises a ferroelectric thin film (1), an external stress device (2), a heat conduction substrate (3), a heat absorption layer (4) and a heat dissipation layer (5), wherein the ferroelectric thin film (1) is connected with one surface of the heat conduction substrate (3), the heat dissipation layer (5) is arranged on the other surface of the heat conduction substrate (3), the external stress device (2) is connected with the ferroelectric thin film (1), a double-gate switch is arranged on the external stress device (2), the double-gate switch controls the external stress device (2) to apply tensile stress or compressive stress to the ferroelectric thin film (1), the ferroelectric thin film (1) has a multi-domain structure, and the other surface, opposite to the heat conduction substrate (3), of the ferroelectric thin film (1) is connected with the heat absorption layer (4). The invention has the advantages of low working temperature, good temperature adjusting effect, no moving parts, wide working temperature range, wide application range, high refrigeration efficiency, high stability and reliability and the like. The invention is mainly applied to the fields of electronic devices, chip refrigeration and the like.
Description
Technical Field
The invention relates to the field of refrigeration of electronic components, in particular to a solid refrigerator based on positive and negative elastic thermal effects of a ferroelectric film.
Background
At present, the traditional gas compression refrigeration technology has low efficiency, and Freon is used as a refrigerant to destroy the ozone layer, so that the heat dissipation requirement of an electronic chip is higher and higher along with the continuous development of high integration, miniaturization and high frequency of precise electronic components. The solid refrigeration device can be conveniently integrated into an electronic device system, and meanwhile, the solid refrigeration device has the advantages of large working temperature range, good refrigeration effect and the like, so that the technology becomes the most effective refrigeration mode of the electronic chip and the electronic device.
The ferroelectric material has an elastothermal effect, i.e. under adiabatic conditions, applying stress to the ferroelectric material can change its polarization strength, thereby causing its temperature change. It is found that the ferroelectric material has a giant thermoelastic effect, and the temperature change caused by the giant thermoelastic effect is equivalent to the temperature change caused by the thermoelastic effect. Therefore, the refrigeration coefficient of the solid refrigerator developed by using the elastic heating effect of the ferroelectric material is far higher than that of the semiconductor refrigerator. On the other hand, the ferroelectric material can be conveniently integrated into electronic components, and has important application prospect in the aspects of chip refrigeration and temperature regulation of devices such as sensors and the like.
The traditional ferroelectric solid refrigerator generally prepares a ferroelectric film with an initial state being a high-entropy state, such as a ferroelectric film with a polarization disordered state, and then applies an external stress field to the film under an adiabatic condition, wherein the polarization state of the ferroelectric film is changed under the action of stress, and the disordered state is changed into an ordered state, so that the entropy of the ferroelectric film is reduced, and the temperature is increased. At this time, the adiabatic condition is removed, and the ferroelectric film dissipates heat to the outside due to heat transfer; when the ferroelectric film and the heat dissipation layer 5 reach thermal equilibrium, the heat transfer is stopped, and then the stress field is removed from the ferroelectric film under the adiabatic condition, and the polarization state of the ferroelectric film returns to the disordered state from the order due to the absence of the stress, so that the entropy of the ferroelectric film is increased, and the temperature is reduced. At this time, the adiabatic condition is removed, and the ferroelectric thin film absorbs heat to the heat absorbing layer 4 due to heat transfer, so that the temperature of the substance to be cooled is lowered. The two processes are performed alternately, and in order to realize the continuous operation of the refrigeration system and enable the ferroelectric film to continuously absorb heat from the refrigerated substance and radiate heat to the outside, the ferroelectric film needs to be in contact with the heat dissipation layer 5 and the heat absorption layer 4 alternately. This requires that some of the components of the refrigeration system "either ferroelectric thin films or extreme" motion in contact with the heat sink layer 5 or heat sink layer 4 significantly reduces the reliability of the refrigeration system.
The solid refrigerator of the invention is that firstly preparing the ferroelectric film with initial polarization state in multi-domain structure, applying tensile stress to the ferroelectric film, the ferroelectric film has negative elastic heat effect, the temperature is reduced, because of the heat transfer function, the ferroelectric film absorbs heat from the heat absorbing layer 4; the ferroelectric film is applied with pressure stress, the ferroelectric film has positive elastic thermal effect, the temperature is increased, and the ferroelectric film radiates heat to one end of the heat radiation layer 5 due to the heat transfer effect. The alternating stress field can realize the cooling of the refrigerating end and the heat dissipation to the heat dissipation layer 5 without the movement of related parts, which greatly improves the stability and reliability of the solid refrigerator.
Disclosure of Invention
The invention aims to solve the problems in the prior art, and provides a solid refrigerator based on positive and negative elasto-thermal effects of a ferroelectric film, which has the advantages of low working temperature, good temperature regulation effect, no moving part, wide working temperature range, wide application range, high refrigeration efficiency, high stability and high reliability.
In order to solve the technical problems, the invention adopts the following technical scheme:
The heat-conducting film comprises a ferroelectric film 1, an external stress device 2, a heat-conducting substrate 3, a heat-absorbing layer 4 and a heat-radiating layer 5, wherein the ferroelectric film 1 is connected with one surface of the heat-conducting substrate 3, the heat-radiating layer 5 is arranged on the other surface of the heat-conducting substrate 3, the external stress device 2 is connected with the ferroelectric film 1, a double-gate switch is arranged on the external stress device 2 and controls the external stress device 2 to apply tensile stress or compressive stress to the ferroelectric film 1, the ferroelectric film 1 has a multi-domain structure, and the other surface, opposite to the heat-conducting substrate 3, of the ferroelectric film 1 is connected with the heat-absorbing layer 4.
The ferroelectric film 1 is made of any one of lead titanate, barium titanate, bismuth titanate and lithium niobate, and is a more suitable domain structure ferroelectric material.
The thickness of the ferroelectric thin film 1 is 0.05-100 μm.
The ferroelectric film 1 is grown on the heat conducting substrate 3 by adopting a laser molecular beam epitaxy method or a pulse laser deposition method, and can also be prepared by other physical and chemical methods.
The heat conducting substrate 3 is made of alumina or quartz and has good heat transfer performance.
The multi-domain structure is a 90-degree domain structure or a 180-degree domain structure, and a relatively obvious elastic heating effect can be realized.
The magnitude of the external stress is-2-2 GPa.
The ferroelectric film 1 is directly connected with an external stress device 2.
Compared with the prior art, the invention has the advantages that:
The solid refrigerator of the invention is that firstly preparing the ferroelectric film with initial polarization state in multi-domain structure, applying tensile stress to the ferroelectric film, the ferroelectric film has negative elastic heat effect, the temperature is reduced, because of the heat transfer function, the ferroelectric film absorbs heat from the heat absorbing layer 4; the ferroelectric film is applied with pressure stress, the ferroelectric film has positive elastic thermal effect, the temperature is increased, and the ferroelectric film radiates heat to one end of the heat radiation layer 5 due to the heat transfer effect. The cooling and heat dissipation layer 5 can be realized by changing the stress field alternately without the movement of related parts, so that the stability and the reliability of the solid refrigerator are greatly improved, and the state of the ferroelectric film can be flexibly adjusted according to actual needs through controllable stress conversion, so that the application range is wider.
Drawings
FIG. 1 is a schematic structural diagram of the present invention.
FIG. 2 shows PbTiO with 180-degree domain structure obtained in example 1 of the present invention3Temperature profile of ferroelectric thin film at 2 Gpa.
FIG. 3 shows PbTiO with 180-degree domain structure obtained in example 2 of the present invention3Temperature profile of ferroelectric thin film at-2 Gpa.
FIG. 4 shows PbTiO with 180-degree domain structure obtained in example 3 of the present invention3Adiabatic temperature change curves of ferroelectric thin films under different stresses.
In the figure: 1-ferroelectric film, 2-external stress device, 3-heat conducting substrate, 4-heat absorbing layer, 5-heat dissipating layer.
Detailed Description
The invention will be described in further detail below with reference to the accompanying drawings and specific embodiments.
Embodiment 1, the present invention includes a ferroelectric thin film 1, an external stress device 2, a heat conducting substrate 3, a heat absorbing layer 4, and a heat dissipating layer 5, where the ferroelectric thin film 1 is connected to one surface of the heat conducting substrate 3, the heat dissipating layer 5 is disposed on the other surface of the heat conducting substrate 3, the external stress device 2 is connected to the ferroelectric thin film 1, a dual-gate switch is disposed on the external stress device 2, the dual-gate switch controls the external stress device 2 to apply a tensile stress or a compressive stress to the ferroelectric thin film 1, the ferroelectric thin film 1 has a multi-domain structure, and the other surface of the ferroelectric thin film 1 opposite to the heat conducting substrate 3 is connected to the heat absorbing layer 4; by using laser molecular beam epitaxy technique in oxygenPreparing a lead titanate ferroelectric film on an aluminum substrate, wherein the prepared ferroelectric film has a 180-degree domain structure, and the thickness of the lead titanate ferroelectric film is 0.05 mu m. The ferroelectric thin film is then connected to a stress device as shown in fig. 1. The refrigerator is driven to work by applying tensile stress on the lead titanate ferroelectric film, the applied stress is 2Gpa, and refrigeration is realized by the negative elastic heat effect generated by the electric domain of the ferroelectric film under the tensile stress. Obtaining PbTiO with 180-degree domain structure3The temperature profile of the ferroelectric thin film is shown in fig. 2. When negative elastic thermal effect occurs near the 180 DEG domain wall, the temperature change Delta T is 10-12K. See fig. 1-4.
Embodiment 2, the invention includes a ferroelectric thin film 1, an external stress device 2, a heat conducting substrate 3, a heat absorbing layer 4, and a heat dissipating layer 5, where the ferroelectric thin film 1 is connected to one surface of the heat conducting substrate 3, the heat dissipating layer 5 is disposed on the other surface of the heat conducting substrate 3, the external stress device 2 is connected to the ferroelectric thin film 1, a dual-gate switch is disposed on the external stress device 2, the dual-gate switch controls the external stress device 2 to apply a tensile stress or a compressive stress to the ferroelectric thin film 1, the ferroelectric thin film 1 has a multi-domain structure, and the other surface of the ferroelectric thin film 1 opposite to the heat conducting substrate 3 is connected to the heat absorbing layer 4; the lead titanate ferroelectric film is prepared on the quartz substrate by adopting a pulse laser precipitation method, and the prepared ferroelectric film has a 180-degree domain structure, wherein the thickness of the lead titanate ferroelectric film is 0.05 mu m. The ferroelectric thin film is then connected to a stress device as shown in fig. 1. The refrigerator is driven to work by applying compressive stress on the lead titanate ferroelectric film, the applied stress is-2 Gpa, and refrigeration is realized by means of the positive elastic heat effect generated by the electric domain of the ferroelectric film under the compressive stress. Obtaining PbTiO with 180-degree domain structure3The temperature profile of the ferroelectric thin film is shown in fig. 3. When positive elastic thermal effect occurs near the 180-degree domain wall, the temperature change delta T is 4-4.5K. Referring to FIGS. 1-4, the rest is the same as example 1.
Embodiment 3, the present invention includes a ferroelectric thin film 1, an external stress device 2, a heat conductive substrate 3, a heat absorbing layer 4, and a heat dissipating layer 5, wherein the ferroelectric thin film 1 is connected to one surface of the heat conductive substrate 3, the heat dissipating layer 5 is disposed on the other surface of the heat conductive substrate 3, the external stress device 2 is connected to the ferroelectric thin film 1, a dual-gate switch is disposed on the external stress device 2, and the dual-gate switch controls the external stress deviceThe stressing device 2 applies tensile stress or compressive stress to the ferroelectric film 1, the ferroelectric film 1 has a multi-domain structure, and the other surface, opposite to the heat conducting substrate 3, of the ferroelectric film 1 is connected with the heat absorbing layer 4; preparing a lead titanate ferroelectric film on an alumina substrate by adopting an atomic layer deposition method, wherein the prepared ferroelectric film has a 180-degree domain structure, and the thickness of the lead titanate ferroelectric film is 0.05 mu m. The ferroelectric thin film is then connected to a stress device as shown in fig. 1. Different stresses are applied to the lead titanate ferroelectric film to drive the refrigerator to work, the applied stress range is-2 Gpa-2Gpa, and refrigeration is realized by means of positive elastic heat effect or negative elastic heat effect generated by electric domains of the ferroelectric film under different stresses. Obtaining PbTiO with 180-degree domain structure3The adiabatic temperature change curve of the ferroelectric thin film is shown in fig. 4. When the applied stress range is-2 Gpa-2Gpa, the PbTiO with 180-degree domain structure3The ferroelectric thin film has an adiabatic temperature change Δ T of about 13K. Referring to fig. 1-4, the remainder is as described above.
In example 4, the ferroelectric thin film prepared was barium titanate, and the temperature change distribution of the ferroelectric thin film in operation is shown in fig. 2, similarly to example 1. Referring to fig. 1-4, the remainder is as described above.
In example 5, the ferroelectric thin film prepared was bismuth titanate, and the temperature change distribution of the ferroelectric thin film in operation is shown in fig. 3, as in the remaining example 2. Referring to fig. 1-4, the remainder is as described above.
In example 6, the ferroelectric thin film prepared was lithium niobate, and the adiabatic temperature change curve of the ferroelectric thin film when the ferroelectric thin film was operated as in example 3 is shown in fig. 4. Referring to fig. 1-4, the remainder is as described above.
The foregoing is considered as illustrative of the preferred embodiments of the invention and is not to be construed as limiting the invention in any way. Although the present invention has been described with reference to the preferred embodiments, it is not intended to be limited thereto. Those skilled in the art can make numerous possible variations and modifications to the present invention, or modify equivalent embodiments to equivalent variations, without departing from the scope of the invention, using the teachings disclosed above. Therefore, any simple modification, equivalent change and modification made to the above embodiments according to the technical spirit of the present invention should fall within the protection scope of the technical scheme of the present invention, unless the technical spirit of the present invention departs from the content of the technical scheme of the present invention.
Claims (7)
1. The utility model provides a solid state refrigerator based on positive negative elastic thermal effect of ferroelectric film which characterized in that: the ferroelectric thin film heat dissipation device comprises a ferroelectric thin film (1), an external stress device (2), a heat conduction substrate (3), a heat absorption layer (4) and a heat dissipation layer (5), wherein the ferroelectric thin film (1) is connected with one surface of the heat conduction substrate (3), the heat dissipation layer (5) is arranged on the other surface of the heat conduction substrate (3), the external stress device (2) is connected with the ferroelectric thin film (1), a double-gate switch is arranged on the external stress device (2), the double-gate switch controls the external stress device (2) to apply tensile stress or compressive stress to the ferroelectric thin film (1), the ferroelectric thin film (1) has a multi-domain structure, and the other surface, opposite to the heat conduction substrate (3), of the ferroelectric thin film (1) is connected with the heat absorption layer (4); the ferroelectric film (1) is made of any one of lead titanate, barium titanate, bismuth titanate and lithium niobate.
2. The solid state refrigerator based on positive and negative elastic thermal effect of ferroelectric film as claimed in claim 1, characterized in that: the thickness of the ferroelectric film (1) is 0.05-100 μm.
3. The solid state refrigerator based on positive and negative elastic thermal effect of ferroelectric film as claimed in claim 1, characterized in that: the ferroelectric film (1) is grown on the heat-conducting substrate (3) by adopting a laser molecular beam epitaxy method or a pulse laser deposition method.
4. The solid state refrigerator based on positive and negative elastic thermal effect of ferroelectric film as claimed in claim 1, characterized in that: the heat-conducting substrate (3) is made of alumina or quartz.
5. The solid state refrigerator based on positive and negative elastic thermal effect of ferroelectric film as claimed in claim 1, characterized in that: the multi-domain structure is a 90-degree domain structure or a 180-degree domain structure.
6. The solid state refrigerator based on positive and negative elastic thermal effect of ferroelectric film as claimed in claim 1, characterized in that: the stress is-2-2 GPa.
7. The solid state refrigerator based on positive and negative elastic thermal effect of ferroelectric film as claimed in claim 1, characterized in that: the ferroelectric film (1) is directly connected with the external stress device (2).
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| CN201610738519.9A CN107328137B (en) | 2016-08-26 | 2016-08-26 | Solid refrigerator based on positive and negative elastic thermal effect of ferroelectric film |
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| CN201610738519.9A CN107328137B (en) | 2016-08-26 | 2016-08-26 | Solid refrigerator based on positive and negative elastic thermal effect of ferroelectric film |
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| CN107328137B true CN107328137B (en) | 2019-12-17 |
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| CN1566863A (en) * | 2003-06-19 | 2005-01-19 | 中国科学院电工研究所 | Method for making ferroelectric thin / thick film micro electromechanical refrigerator, its arrangement and refrigerator system |
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| CN1566863A (en) * | 2003-06-19 | 2005-01-19 | 中国科学院电工研究所 | Method for making ferroelectric thin / thick film micro electromechanical refrigerator, its arrangement and refrigerator system |
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