CN107328138B - A kind of novel bullet thermosetting chiller based on ferroelectric thin film domain structure - Google Patents
A kind of novel bullet thermosetting chiller based on ferroelectric thin film domain structure Download PDFInfo
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- CN107328138B CN107328138B CN201610738998.4A CN201610738998A CN107328138B CN 107328138 B CN107328138 B CN 107328138B CN 201610738998 A CN201610738998 A CN 201610738998A CN 107328138 B CN107328138 B CN 107328138B
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F25—REFRIGERATION OR COOLING; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS; MANUFACTURE OR STORAGE OF ICE; LIQUEFACTION SOLIDIFICATION OF GASES
- F25B—REFRIGERATION MACHINES, PLANTS OR SYSTEMS; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS
- F25B21/00—Machines, plants or systems, using electric or magnetic effects
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B30/00—Energy efficient heating, ventilation or air conditioning [HVAC]
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Abstract
The invention discloses a kind of novel bullet thermosetting chiller based on ferroelectric thin film domain structure, it is characterized by: it includes ferroelectric thin film (1) that it, which includes it, applied stress field driver (2), thermal-conductivity substrate (3), heat-sink shell (4), heat dissipating layer (5), the ferroelectric thin film (1) is connected with the one side of thermal-conductivity substrate (3), heat dissipating layer (5) are arranged in thermal-conductivity substrate (3) another side, applied stress field driver (2) is arranged in ferroelectric thin film (1) side, applied stress field driver (2) applies applied stress to ferroelectric thin film (1), the ferroelectric thin film (1) has multidomain structure, ferroelectric thin film (1) another side opposite with thermal-conductivity substrate (3) is connected (4) with heat-sink shell.The present invention has operating temperature low, and temperature regulation effect is good, and service life is longer, and movement-less part, operating temperature range be wide, high cooling efficiency, stability and high reliability.Present invention is mainly applied to the fields such as electronic device, chip refrigeration.
Description
Technical field
The present invention relates to electronic component refrigerating field, in particular to a kind of novel bullet heat based on ferroelectric thin film domain structure
Solid refrigerator.
Background technique
As electronic chip is constantly to highly integrated, miniaturization and high frequency development, the heat dissipation of chip has become influence electricity
One bottleneck of sub- industrial development.The Refrigeration Technique of chip and electronic device be ensure electronic device effectively work it is basic.By
It can be readily integrated into electronics system in solid coolant device, solid coolant technology is to realize electronic chip and electronics device
The most effective refrigeration modes of part.
Ferroelectric material, which has, plays fuel factor, i.e., under adiabatic conditions, applying external carbuncle field to ferroelectric material can change it
Polarization intensity, so as to cause its temperature change.The study found that the coefficient of refrigerating performance of ferroelectricity bullet refrigeration heat device is already close to current
Widely used mechanical refrigeration equipment, the significantly larger than coefficient of refrigerating performance of semiconductor cooler.Ferroelectric material is convenient to be integrated into
It is with important application prospects in terms of the temperature adjusting of the devices such as chip refrigeration and sensor in electronic component.
Traditional solid coolant method usually first prepares the ferroelectric thin film 1 that original state is high entropy state, and such as polarize nothing
Then the ferroelectric thin film 1 of sequence state applies an extra electric field or stress field to film under adiabatic conditions, at this time due to electric field
Or stress, 1 polarized state of ferroelectric thin film change, and become order state from disordered state, and 1 entropy of ferroelectric thin film is caused to reduce,
Temperature increases.Adiabatic condition is removed at this time, and ferroelectric thin film 1 is outwardly radiated due to heat transmitting.Ferroelectric thin film 1 and extraneous ring at this time
Border is connected；When ferroelectric thin film 1 and external environment reach thermal balance, heat transmitting stops, then to ferroelectric thin film 1 under adiabatic condition
Electric field or destressing field are gone to, due to the effect without electric field or stress, 1 polarized state of ferroelectric thin film is unordered by orderly returning to
State causes 1 entropy of ferroelectric thin film to increase, and temperature reduces.Remove adiabatic condition at this time, ferroelectric thin film 1 is transmitted due to heat to being made
Solidifiable substance heat absorption, makes to be reduced by cooling substance temperature.Ferroelectric thin film 1 is connected with by cooling substance at this time.Two above process
It is the alternately continuous operations of Yao Shixian refrigeration system, makes ferroelectric thin film 1 constantly from by cooling substance heat absorption and to the external world
Heat dissipation just must satisfy ferroelectric thin film 1 and alternately contact with external environment and by cooling substance respectively.This requires refrigeration system portions
Sub-unit " or ferroelectric thin film 1, or contact with external environment or by cooling substance extreme " movement, greatly reduces refrigeration
The reliability of system.
Solid refrigerator of the present invention is first to prepare the ferroelectric thin film 1 that initial polarization state is 90 ° of farmlands, to ferroelectricity
Film 1 applies working stress, and domain wall nearby changes close to by the spontaneous polarization state of cooling substance side electricdomain, and entropy is caused to increase
Add, causes the temperature of the region electricdomain to reduce, due to heat transfer process, ferroelectric thin film 1 absorbs heat from by cooling substance；Near domain wall
The polarized state of other side electricdomain changes and entropy is caused to reduce, and the temperature of the region electricdomain is caused to increase, due to heat transfer process,
Ferroelectric thin film 1 outwardly radiate by environment one end.After applying working stress, since domain wall two sides are just playing fuel factor and negative bullet fuel factor
It carries out simultaneously, so the two processes carry out simultaneously.Therefore, to by the cooling of cooling substance and the outwardly heat dissipation of environment
The movement that can be carried out simultaneously without associated components, which greatly enhances the stability of solid refrigerator and reliabilities.
Summary of the invention
Present invention aim to address problems of the existing technology, and the present invention provides one kind to have operating temperature thus
Low, temperature regulation effect is good, and service life is longer, and movement-less part, operating temperature range be wide, high cooling efficiency, stability and
The novel bullet thermosetting chiller based on ferroelectric thin film domain structure of high reliablity.
In order to solve the above technical problems, the invention adopts the following technical scheme:
The present invention includes ferroelectric thin film 1, additional applied stress field driver 2, thermal-conductivity substrate 3, heat-sink shell 4, heat dissipating layer 5,
The ferroelectric thin film 1 is connected with the one side of thermal-conductivity substrate 3, and heat dissipating layer 5, additional applied stress is arranged in 3 another side of thermal-conductivity substrate
In 1 side of ferroelectric thin film, additional applied stress field driver 2 applies applied stress, shape to ferroelectric thin film 1 for the field setting of driver 2
At stress field, the ferroelectric thin film 1 has multidomain structure, and generates positive bullet heat at domain wall both ends respectively under the action of stress field
Effect and it is negative play fuel factor, wherein just playing fuel factor by thermal-conductivity substrate heat release 3, another opposite with thermal-conductivity substrate 3 of ferroelectric thin film 1
It is connected on one side with heat-sink shell 4, the negative fuel factor that plays is absorbed heat by heat-sink shell 4.
The ferroelectric thin film 1 is more suitable using any one production in lead titanates, barium titanate, bismuth titanates or lithium niobate
The domain structure ferroelectric material of conjunction.
The ferroelectric thin film 1 with a thickness of 0.05-100 μm.
The ferroelectric thin film 1 is grown in thermal-conductivity substrate 3 using laser molecular beam epitaxy or pulsed laser deposition.
The thermal-conductivity substrate 3 is made of aluminium oxide or quartz, has good heat transfer performance.
The multidomain structure is 90 ° of domain structures or 180 ° of domain structures, it can be achieved that obvious bullet fuel factor.
The size of the applied stress is -2-2GPa.
The ferroelectric thin film 1 is directly connected to applied stress field driver 2.
Compared with the prior art, the advantages of the present invention are as follows:
The present invention is first to prepare the ferroelectric thin film 1 that initial polarization state is 90 ° of farmlands, applies working stress to ferroelectric thin film 1,
Domain wall nearby changes close to by the spontaneous polarization state of cooling substance side electricdomain, causes entropy to increase, leads to the region electricdomain
Temperature reduces, and due to heat transfer process, ferroelectric thin film 1 absorbs heat from by cooling substance；The polarization shape of other side electricdomain near domain wall
State changes and entropy is caused to reduce, and the temperature of the region electricdomain is caused to increase, due to heat transfer process, the outwardly ring of ferroelectric thin film 1
The heat dissipation of border one end；After applying working stress, due to domain wall two sides just playing fuel factor and it is negative play fuel factor while carrying out, so this two
A process carries out simultaneously, has operating temperature range wide, operating temperature is low, the good advantage of temperature regulation effect.To being made
The movement that the heat dissipation of the cooling of solidifiable substance and outwardly environment can be carried out without associated components simultaneously, movement-less part,
Manufacturing cost is saved, which greatly enhances the stability of solid refrigerator and reliabilities, improve refrigerating efficiency, extend machine
Device service life.
Detailed description of the invention
Fig. 1 is the structural diagram of the present invention.
Fig. 2 is 90 ° of domain structure PbTiO that the embodiment of the present invention 1 obtains3Temperature profile of the ferroelectric thin film 1 at 2GPa.
Fig. 3 is 90 ° of domain structure PbTiO that the embodiment of the present invention 1 obtains3Temperature Distribution of the ferroelectric thin film 1 at -2GPa
Figure.
Fig. 4 is 180 ° of domain structure PbTiO that the embodiment of the present invention 2 obtains3Temperature Distribution of the ferroelectric thin film 1 at 2GPa
Figure.
Fig. 5 is 180 ° of domain structure PbTiO that the embodiment of the present invention 2 obtains3Temperature Distribution of the ferroelectric thin film 1 at -2GPa
Figure.
In figure: 1- ferroelectric thin film, 2- applied stress field driver, 3- thermal-conductivity substrate, 4- heat-sink shell, 5- heat dissipating layer.
Specific embodiment
Below with reference to the drawings and specific embodiments, invention is further described in detail.
Embodiment 1, the present invention include ferroelectric thin film 1, applied stress field driver 2, thermal-conductivity substrate 3, heat-sink shell 4, heat dissipation
Layer 5, the ferroelectric thin film 1 is connected with the one side of thermal-conductivity substrate 3, and heat dissipating layer 5, applied stress is arranged in 3 another side of thermal-conductivity substrate
The field setting of driver 2 is in 1 side of ferroelectric thin film, and applied stress field driver 2 applies applied stress to ferroelectric thin film 1, and formation is answered
The field of force, the ferroelectric thin film 1 have multidomain structure, and generate positive bullet fuel factor at domain wall both ends respectively under the action of stress field
With negative bullet fuel factor, wherein just playing fuel factor by thermal-conductivity substrate heat release 3, the another side opposite with thermal-conductivity substrate 3 of ferroelectric thin film 1
It is connected with heat-sink shell 4, the negative fuel factor that plays is absorbed heat by heat-sink shell 4；Using laser molecular beam epitaxy method, on alumina substrates
Prepare lead titanatc ferroelectric membranc 1；Wherein, lead titanate thin film with a thickness of 50 nanometers, lead titanate thin film has 90 ° of domain structures, such as
Shown in Fig. 2；Applied stress field driver 2 is connected with ferroelectric thin film 1, applies tensile stress to ferroelectric thin film 1, stress intensity is
2GPa drives refrigerator to work with this, positive electrocaloric effect and the negative electricity heat generated under stress field by the electricdomain of ferroelectric thin film 1
Effect realizes refrigeration；Temperature change distribution when lead titanatc ferroelectric membranc 1 works is sent out as shown in Fig. 2, on the upside of near 90 ° of domain walls
Raw positive bullet fuel factor, change in temperature Δ T is 6-9K；Nearby bullet fuel factor, change in temperature Δ T are born in downside, generation to 90 ° of domain walls
For -6--9K.And in the whole process, the positive bullet fuel factor and the negative fuel factor that plays that domain wall two sides are occurred carry out simultaneously.Ginseng
Read Fig. 1-5.
Embodiment 2, the present invention include ferroelectric thin film 1, applied stress field driver 2, thermal-conductivity substrate 3, heat-sink shell 4, heat dissipation
Layer 5, the ferroelectric thin film 1 is connected with the one side of thermal-conductivity substrate 3, and heat dissipating layer 5, applied stress is arranged in 3 another side of thermal-conductivity substrate
The field setting of driver 2 is in 1 side of ferroelectric thin film, and applied stress field driver 2 applies applied stress to ferroelectric thin film 1, and formation is answered
The field of force, the ferroelectric thin film 1 have multidomain structure, and generate positive bullet fuel factor at domain wall both ends respectively under the action of stress field
With negative bullet fuel factor, wherein just playing fuel factor by thermal-conductivity substrate heat release 3, the another side opposite with thermal-conductivity substrate 3 of ferroelectric thin film 1
It is connected with heat-sink shell 4, the negative fuel factor that plays is absorbed heat by heat-sink shell 4；Using laser molecular beam epitaxy method, make on a quartz substrate
Standby lead titanates epitaxial ferroelectric film 1；Applied stress field driver 2 is connected with ferroelectric thin film 1.Wherein lead titanates with a thickness of
100 nanometers, the domain structure of film is 180 ° of domain structures, as shown in Figure 4.Tensile stress is applied to ferroelectric thin film 1, stress intensity is
2GPa drives refrigerator to work with this, positive electrocaloric effect and the negative electricity heat generated under stress field by the electricdomain of ferroelectric thin film 1
Effect realizes refrigeration.The temperature change distribution of lead titanatc ferroelectric membranc 1 is obtained, as a result as shown in figure 4, near 180 ° of domain walls
Side, occurs positive bullet fuel factor, and change in temperature Δ T is 3-4K；Nearby bullet fuel factor, temperature are born in downside, generation to 180 ° of domain walls
Change Delta T is -3--4K.And in the whole process, domain wall two sides are occurred positive bullet fuel factor and it is negative play fuel factor be simultaneously into
Capable.Refering to fig. 1-5, remaining is the same as embodiment 1.
Embodiment 3, the present invention include ferroelectric thin film 1, applied stress field driver 2, thermal-conductivity substrate 3, heat-sink shell 4, heat dissipation
Layer 5, the ferroelectric thin film 1 is connected with the one side of thermal-conductivity substrate 3, and heat dissipating layer 5, applied stress is arranged in 3 another side of thermal-conductivity substrate
The field setting of driver 2 is in 1 side of ferroelectric thin film, and applied stress field driver 2 applies applied stress to ferroelectric thin film 1, and formation is answered
The field of force, the ferroelectric thin film 1 have multidomain structure, and generate positive bullet fuel factor at domain wall both ends respectively under the action of stress field
With negative bullet fuel factor, wherein just playing fuel factor by thermal-conductivity substrate heat release 3, the another side opposite with thermal-conductivity substrate 3 of ferroelectric thin film 1
It is connected with heat-sink shell 4, the negative fuel factor that plays is absorbed heat by heat-sink shell 4；Using pulse laser deposition method, make on alumina substrates
Standby lead titanatc ferroelectric membranc 1；Wherein, lead titanate thin film with a thickness of 100 nanometers, lead titanate thin film has 90 ° of domain structures, such as schemes
Shown in 3；Applied stress field driver 2 is connected with ferroelectric thin film 1, to ferroelectric thin film 1 apply compression, stress intensity be-
2GPa drives refrigerator to work with this, positive electrocaloric effect and the negative electricity heat generated under stress field by the electricdomain of ferroelectric thin film 1
Effect realizes refrigeration.Temperature change distribution when lead titanatc ferroelectric membranc 1 works is sent out as shown in figure 3, on the upside of near 90 ° of domain walls
Raw positive bullet fuel factor, change in temperature Δ T is 6-9K；Nearby bullet fuel factor, change in temperature Δ T are born in downside, generation to 90 ° of domain walls
For -6--9K；And in the whole process, the positive bullet fuel factor and the negative fuel factor that plays that domain wall two sides are occurred carry out simultaneously.Ginseng
Fig. 1-5 is read, remaining same above-described embodiment.
Embodiment 4, the present invention include ferroelectric thin film 1, applied stress field driver 2, thermal-conductivity substrate 3, heat-sink shell 4, heat dissipation
Layer 5, the ferroelectric thin film 1 is connected with the one side of thermal-conductivity substrate 3, and heat dissipating layer 5, applied stress is arranged in 3 another side of thermal-conductivity substrate
The field setting of driver 2 is in 1 side of ferroelectric thin film, and applied stress field driver 2 applies applied stress to ferroelectric thin film 1, and formation is answered
The field of force, the ferroelectric thin film 1 have multidomain structure, and generate positive bullet fuel factor at domain wall both ends respectively under the action of stress field
With negative bullet fuel factor, wherein just playing fuel factor by thermal-conductivity substrate heat release 3, the another side opposite with thermal-conductivity substrate 3 of ferroelectric thin film 1
It is connected with heat-sink shell 4, the negative fuel factor that plays is absorbed heat by heat-sink shell 4；Using pulse laser deposition method, prepare on a quartz substrate
Lead titanatc ferroelectric membranc 1；Wherein, lead titanate thin film with a thickness of 60 nanometers, lead titanate thin film has 180 ° of domain structures, such as Fig. 5
It is shown.Applied stress field driver 2 is connected with ferroelectric thin film 1, to ferroelectric thin film 1 apply compression, stress intensity be-
2GPa drives refrigerator to work with this, positive electrocaloric effect and the negative electricity heat generated under stress field by the electricdomain of ferroelectric thin film 1
Effect realizes refrigeration.Temperature change distribution when lead titanatc ferroelectric membranc 1 works is sent out as shown in figure 5, on the upside of near 180 ° of domain walls
Raw positive bullet fuel factor, change in temperature Δ T is 6-9K；Nearby bullet fuel factor, change in temperature Δ are born in downside, generation to 180 ° of domain walls
T is -6--9K.And in the whole process, the positive bullet fuel factor and the negative fuel factor that plays that domain wall two sides are occurred carry out simultaneously.
Refering to fig. 1-5, remaining same above-described embodiment.
Embodiment 5, prepared ferroelectric thin film 1 are barium titanate, remaining temperature with embodiment 1, when ferroelectric thin film 1 works
Change profile is as shown in Figure 2.Refering to fig. 1-5, remaining same above-described embodiment.
Embodiment 6, prepared ferroelectric thin film 1 are bismuth titanates, remaining temperature with embodiment 2, when ferroelectric thin film 1 works
Change profile is as shown in Figure 4.Refering to fig. 1-5, remaining same above-described embodiment.
Embodiment 7, prepared ferroelectric thin film 1 are lithium niobate, remaining temperature with embodiment 3, when ferroelectric thin film 1 works
Change profile is as shown in Figure 3.Refering to fig. 1-5, remaining same above-described embodiment.
Above-mentioned only presently preferred embodiments of the present invention, is not intended to limit the present invention in any form.Although of the invention
It has been disclosed in a preferred embodiment above, however, it is not intended to limit the invention.Anyone skilled in the art is not taking off
In the case where from technical solution of the present invention range, all technical solution of the present invention is made perhaps using the technology contents of the disclosure above
Mostly possible changes and modifications or equivalent example modified to equivalent change.Therefore, all without departing from technical solution of the present invention
Content, technical spirit any simple modifications, equivalents, and modifications made to the above embodiment, should all fall according to the present invention
In the range of technical solution of the present invention protection.
Claims (2)
1. a kind of novel bullet thermosetting chiller based on ferroelectric thin film domain structure, it is characterised in that: it includes ferroelectric thin film
(1), applied stress field driver (2), thermal-conductivity substrate (3), heat-sink shell (4), heat dissipating layer (5), the ferroelectric thin film (1) with lead
The one side of hot substrate (3) is connected, and heat dissipating layer (5) are arranged in thermal-conductivity substrate (3) another side, and applied stress field driver (2) setting exists
Ferroelectric thin film (1) side, applied stress field driver (2) apply applied stress, the ferroelectric thin film (1) to ferroelectric thin film (1)
With multidomain structure, ferroelectric thin film (1) another side opposite with thermal-conductivity substrate (3) is connected (4) with heat-sink shell；
The ferroelectric thin film (1) is using any one production in lead titanates, barium titanate, bismuth titanates or lithium niobate；
The ferroelectric thin film (1) with a thickness of 0.05-100 μm；
The ferroelectric thin film (1) is grown on thermal-conductivity substrate (3) using laser molecular beam epitaxy or pulsed laser deposition；
The thermal-conductivity substrate (3) is made of aluminium oxide or quartz；
The multidomain structure is 90 ° of domain structures or 180 ° of domain structures；
The size of the applied stress is -2-2GPa.
2. a kind of novel bullet thermosetting chiller based on ferroelectric thin film domain structure according to claim 1, feature exist
In: the ferroelectric thin film (1) is directly connected to applied stress field driver (2).
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1566863A (en) * | 2003-06-19 | 2005-01-19 | 中国科学院电工研究所 | Method for making ferroelectric thin / thick film micro electromechanical refrigerator, its arrangement and refrigerator system |
| CN102192614A (en) * | 2010-03-12 | 2011-09-21 | 香港理工大学 | Sheet-type micro refrigerator applying lead-free ferroelectric material |
| CN102778075A (en) * | 2011-04-11 | 2012-11-14 | 崔军 | Thermoelastic cooling |
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| US10018385B2 (en) * | 2012-03-27 | 2018-07-10 | University Of Maryland, College Park | Solid-state heating or cooling systems, devices, and methods |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1566863A (en) * | 2003-06-19 | 2005-01-19 | 中国科学院电工研究所 | Method for making ferroelectric thin / thick film micro electromechanical refrigerator, its arrangement and refrigerator system |
| CN102192614A (en) * | 2010-03-12 | 2011-09-21 | 香港理工大学 | Sheet-type micro refrigerator applying lead-free ferroelectric material |
| CN102778075A (en) * | 2011-04-11 | 2012-11-14 | 崔军 | Thermoelastic cooling |
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