CN107311642A - A kind of piezoresistive material - Google Patents
A kind of piezoresistive material Download PDFInfo
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- CN107311642A CN107311642A CN201710502074.9A CN201710502074A CN107311642A CN 107311642 A CN107311642 A CN 107311642A CN 201710502074 A CN201710502074 A CN 201710502074A CN 107311642 A CN107311642 A CN 107311642A
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- ytterbium
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- 239000000463 material Substances 0.000 title claims abstract description 50
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims abstract description 26
- 229910052761 rare earth metal Inorganic materials 0.000 claims abstract description 14
- 150000002910 rare earth metals Chemical class 0.000 claims abstract description 14
- 239000011787 zinc oxide Substances 0.000 claims abstract description 13
- UZLYXNNZYFBAQO-UHFFFAOYSA-N oxygen(2-);ytterbium(3+) Chemical compound [O-2].[O-2].[O-2].[Yb+3].[Yb+3] UZLYXNNZYFBAQO-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910003454 ytterbium oxide Inorganic materials 0.000 claims abstract description 10
- 229940075624 ytterbium oxide Drugs 0.000 claims abstract description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 8
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 8
- JPJALAQPGMAKDF-UHFFFAOYSA-N selenium dioxide Chemical compound O=[Se]=O JPJALAQPGMAKDF-UHFFFAOYSA-N 0.000 claims abstract description 4
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 4
- 229910052712 strontium Inorganic materials 0.000 claims abstract description 4
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 claims abstract description 4
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910001887 tin oxide Inorganic materials 0.000 claims abstract description 4
- 239000004408 titanium dioxide Substances 0.000 claims abstract description 4
- -1 ytterbium ion Chemical class 0.000 claims abstract description 4
- 239000011656 manganese carbonate Substances 0.000 claims abstract description 3
- 229940093474 manganese carbonate Drugs 0.000 claims abstract description 3
- 235000006748 manganese carbonate Nutrition 0.000 claims abstract description 3
- 229910000016 manganese(II) carbonate Inorganic materials 0.000 claims abstract description 3
- XMWCXZJXESXBBY-UHFFFAOYSA-L manganese(ii) carbonate Chemical compound [Mn+2].[O-]C([O-])=O XMWCXZJXESXBBY-UHFFFAOYSA-L 0.000 claims abstract description 3
- 239000002245 particle Substances 0.000 claims description 6
- BNGXYYYYKUGPPF-UHFFFAOYSA-M (3-methylphenyl)methyl-triphenylphosphanium;chloride Chemical compound [Cl-].CC1=CC=CC(C[P+](C=2C=CC=CC=2)(C=2C=CC=CC=2)C=2C=CC=CC=2)=C1 BNGXYYYYKUGPPF-UHFFFAOYSA-M 0.000 claims description 3
- 239000000203 mixture Substances 0.000 abstract description 7
- 229910052769 Ytterbium Inorganic materials 0.000 abstract description 3
- PTFCDOFLOPIGGS-UHFFFAOYSA-N Zinc dication Chemical compound [Zn+2] PTFCDOFLOPIGGS-UHFFFAOYSA-N 0.000 abstract description 3
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 abstract description 2
- 239000000654 additive Substances 0.000 abstract description 2
- 238000009472 formulation Methods 0.000 abstract description 2
- JLDSOYXADOWAKB-UHFFFAOYSA-N aluminium nitrate Chemical class [Al+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O JLDSOYXADOWAKB-UHFFFAOYSA-N 0.000 abstract 1
- 239000013078 crystal Substances 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 238000007873 sieving Methods 0.000 description 3
- 238000002242 deionisation method Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000000498 ball milling Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- PLDDOISOJJCEMH-UHFFFAOYSA-N neodymium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Nd+3].[Nd+3] PLDDOISOJJCEMH-UHFFFAOYSA-N 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910001954 samarium oxide Inorganic materials 0.000 description 1
- 229940075630 samarium oxide Drugs 0.000 description 1
- FKTOIHSPIPYAPE-UHFFFAOYSA-N samarium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[Sm+3].[Sm+3] FKTOIHSPIPYAPE-UHFFFAOYSA-N 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000001238 wet grinding Methods 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/453—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
- H01C7/105—Varistor cores
- H01C7/108—Metal oxide
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Abstract
This case discloses a kind of piezoresistive material, is made up of the material of following parts by weight：The zinc oxide of 98~100 parts by weight；The yittrium oxide of 50~52 parts by weight；The titanium dioxide of 3~5 parts by weight；The ytterbium oxide of 50~52 parts by weight；The tin oxide of 2~4 parts by weight；The selenium oxide of 1~3 parts by weight；The strontium titanates of 5~7 parts by weight；The rheium oxide of 2~4 parts by weight；The manganese carbonate of 2~4 parts by weight；The silica of 6~8 parts by weight；4~6 parts by weight aluminum nitrates；The rare earth sinter of 10~12 parts by weight.This case is by introducing the ruthenium ion and ytterbium ion close with zinc ion radius so that the conventional formulation using zinc oxide as main component is changed into the new formula by main component of zinc oxide, yittrium oxide and ytterbium oxide.With reference to various additives in new formula so that resulting piezoresistive material has higher nonlinear factor, relatively low Leakage Current, stronger heavy current ability and higher voltage gradient.
Description
Technical field
The present invention relates to a kind of piezoresistor Material Field, more particularly to one kind is with zinc oxide, yittrium oxide and oxidation
Ytterbium is the piezoresistive material of main component.
Background technology
Piezo-resistance is a kind of resistance device with nonlinear wind vibration, is mainly used in entering when circuit bears overvoltage
Row voltage clamping, absorbs unnecessary electric current to protect Sensitive Apparatus.English name is " Voltage Dependent
Resistor " is abbreviated as " VDR ", or is called " Varistor ".The resistor material of piezoresistor is semiconductor, so it
It is a kind of semiconductor resistor.Piezo-resistance is a kind of votage limit type protection device.Utilize the non-linear spy of piezo-resistance
Property, when overvoltage appears in two interpolars of piezo-resistance, piezo-resistance can be by voltage clamping to a relatively-stationary voltage
Value, so as to realize the protection to late-class circuit.The major parameter of piezo-resistance has：Pressure sensitive voltage, discharge capacity, junction capacity, sound
Between seasonable etc..The maximum feature of piezo-resistance is, when the voltage being added in above it is less than its threshold values " UN ", to flow through its electricity
Minimum, equivalent to one valve shut is flowed, when voltage is more than UN, its resistance diminishes, and so allows for flowing through its electricity
Stream increases sharply and the influence to other circuits changes less to reduce influence of the overvoltage to follow-up sensitive circuit.Utilize this work(
Can, abnormal overvoltage that can be often to occur in suppression circuit protects the circuit from the infringement of overvoltage.
But, with the development and progress of science and technology, the fast development of especially extensive smart circuit so as to component
The especially requirement more and more higher of resistor, the need for current piezoresistor can not meet development, novel high-performance is big
The resistor and resistance material of capacity receive extensive research, and piezoresistive material and piezo-resistance are that one of them is important
Research direction.
The content of the invention
For above-mentioned weak point, possess high-voltage gradient and excellent electrical properties it is an object of the invention to provide a kind of
Piezoresistive material.
Technical scheme is summarized as follows：
A kind of piezoresistive material, is made up of the material of following parts by weight：
Wherein, the formula of the rare earth sinter is Sm6-x-yNdxLayO9, and 0.2≤x≤2.5,0.2≤y≤2.5.
Preferably, described piezoresistive material, 1≤x≤2,1.8≤y≤2.2.
Preferably, described piezoresistive material, is made up of the material of following parts by weight：
Wherein, the formula of the rare earth sinter is Sm6-x-yNdxLayO9, and 1≤x≤2,1.8≤y≤2.2.
Preferably, described piezoresistive material, is made up of the material of following parts by weight：
Preferably, described piezoresistive material, the zinc oxide, yittrium oxide, titanium dioxide, ytterbium oxide, tin oxide,
Selenium oxide, strontium titanates, rheium oxide, manganese carbonate, silica, aluminum nitrate and Sm6-x-yNdxLayO9Particle diameter be 100~120nm.
The beneficial effects of the invention are as follows：By introducing the ruthenium ion and ytterbium ion (Y close with zinc ion radius3+Radius is
0.088nm, Yb3+Radius is 0.09nm, Zn2+Radius is 0.06nm) so that turn using zinc oxide as the conventional formulation of main component
It is changed into the new formula by main component of zinc oxide, yittrium oxide and ytterbium oxide.With reference to various additives in new formula so that gained
The piezoresistive material arrived has higher nonlinear factor, relatively low Leakage Current, stronger heavy current ability and higher
Voltage gradient.
Embodiment
With reference to embodiment, the present invention is described in further detail, to make those skilled in the art with reference to specification
Word can be implemented according to this.
The piezoresistive material of one embodiment, is made up of the material of following parts by weight：
Wherein, the formula of rare earth sinter is Sm6-x-yNdxLayO9, and 0.2≤x≤2.5,0.2≤y≤2.5.
The preparation method of the piezoresistive material is following (same the method for preparation method of following examples)：
Step 1) above-mentioned various added materials are weighed respectively by proportioning, and mix, obtain a mixture；Above-mentioned all material is removed
Rare earth sintering beyond the region of objective existence producer can directly be bought at home；
Step 2) mixture is subjected to ball milling 1 hour, deionization is washed 3 times, and then drying sieving, obtains powder；
Step 3) obtained powder is poured into ball grinder, isometric deionized water is added, ball grinder is sealed, then will
Ball grinder was placed on planetary ball mill, with 700~800r/min wet-millings 8 hours；
Step 4) take out, it is placed at 200 DEG C and toasts 2 hours, sieving obtains final piezoresistive material；Sieving
When preferable appropriate mesh sieve, to cause obtained diameter of particle in 100~120nm.
It can subsequently mix after drying by adding appropriate polyvinyl alcohol, that is, obtain varistor green.
Rare earth sinter Sm6-x-yNdxLayO9Preparation method it is as follows：
Step a) weighs the samarium oxide, lanthana and neodymia of corresponding weight in proportion, is ground 1 hour, then filled
Divide and mix；
Step b) preheats 1 hour at 400 DEG C, then calcination 2 hours at 1000 DEG C in nitrogen atmosphere；
Step c) grinds obtained sinter to micron order after after natural cooling；
Step d) deionizations are washed 3 times, and then drying, obtains rare earth sinter.
In a preferred embodiment, above-mentioned piezoresistive material, rare earth sinter Sm6-x-yNdxLayO9In, 1≤x≤2,
1.8≤y≤2.2.Rare earth sinter is better able to increase the nonlinear factor of piezo-resistance compared with single metal oxide,
And the voltage gradient of piezo-resistance can be greatly lifted, and due to the low temperature resistant high temperature resistant and weather-proof corrosion resistant of rare earth sinter
Cracking resistance, with the addition of the piezo-resistance of a small amount of rare earth sinter compared to traditional pressure sensitive resistance, with more excellent usability
Can, it is more robust, more environment complicated and changeable are suitable for, such as high radiation or high temperature or high humidity or low temperature adverse circumstances.
In an additional preferred embodiment, above-mentioned piezoresistive material, is made up of the material of following parts by weight：
Wherein, the formula of rare earth sinter is Sm6-x-yNdxLayO9, and 1≤x≤2,1.8≤y≤2.2.
In another preferred embodiment, above-mentioned piezoresistive material is made up of the material of following parts by weight：
In addition, zinc oxide used, yittrium oxide, titanium dioxide, ytterbium oxide, tin oxide, selenium oxide, strontium titanates, rheium oxide, carbon
Sour manganese, silica, aluminum nitrate and Sm6-x-yNdxLayO9Particle diameter should be limited, preferred scope be 100~120nm.If particle diameter
Less than 100nm, then it can cause zinc oxide, ytterbium oxide and yittrium oxide undue growth, so as to reduce zinc oxide, ytterbium oxide and yittrium oxide
The uniformity of crystal grain；If particle diameter is more than 120nm, the alms giver that can reduce zinc oxide, ytterbium oxide and yittrium oxide crystal boundary depletion layer is dense
Degree, the electrical conductivity of reduction zinc oxide, ytterbium oxide and yittrium oxide crystal grain.
Embodiment 1
One piezoresistive material, is made up of the material of following parts by weight：
Embodiment 2
One piezoresistive material, is made up of the material of following parts by weight：
Embodiment 3
One piezoresistive material, is made up of the material of following parts by weight：
Embodiment 4
One piezoresistive material, is made up of the material of following parts by weight：
Embodiment 5
One piezoresistive material, is made up of the material of following parts by weight：
The following is the performance test data table of the gained piezoresistive material of embodiment 1~5：
Although embodiment of the present invention is disclosed as above, it is not restricted in specification and embodiment listed
With it can be applied to various suitable the field of the invention completely, can be easily for those skilled in the art
Other modification is realized, therefore under the universal limited without departing substantially from claim and equivalency range, the present invention is not limited
In specific details.
Claims (5)
1. a kind of piezoresistive material, it is characterised in that be made up of the material of following parts by weight：
Wherein, the formula of the rare earth sinter is Sm6-x-yNdxLayO9, and 0.2≤x≤2.5,0.2≤y≤2.5.
2. piezoresistive material according to claim 1, it is characterised in that 1≤x≤2,1.8≤y≤2.2.
3. piezoresistive material according to claim 2, it is characterised in that be made up of the material of following parts by weight：
Wherein, the formula of the rare earth sinter is Sm6-x-yNdxLayO9, and 1≤x≤2,1.8≤y≤2.2.
4. piezoresistive material according to claim 3, it is characterised in that be made up of the material of following parts by weight：
5. piezoresistive material according to claim 1, it is characterised in that the zinc oxide, yittrium oxide, titanium dioxide,
Ytterbium oxide, tin oxide, selenium oxide, strontium titanates, rheium oxide, manganese carbonate, silica, aluminum nitrate and Sm6-x-yNdxLayO9Particle diameter
For 100~120nm.
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