CN107305789A - The self-test method and device of a kind of non-volatility memorizer - Google Patents
The self-test method and device of a kind of non-volatility memorizer Download PDFInfo
- Publication number
- CN107305789A CN107305789A CN201610255836.5A CN201610255836A CN107305789A CN 107305789 A CN107305789 A CN 107305789A CN 201610255836 A CN201610255836 A CN 201610255836A CN 107305789 A CN107305789 A CN 107305789A
- Authority
- CN
- China
- Prior art keywords
- test
- tested
- project
- volatility memorizer
- self
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/56—External testing equipment for static stores, e.g. automatic test equipment [ATE]; Interfaces therefor
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/56—External testing equipment for static stores, e.g. automatic test equipment [ATE]; Interfaces therefor
- G11C2029/5606—Error catch memory
Landscapes
- Tests Of Electronic Circuits (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
Abstract
The invention provides a kind of self-test method of non-volatility memorizer and device, non-volatility memorizer includes self test controller, and non-volatility memorizer is connected with test equipment, and method includes：The startup self-test instruction that test equipment is sent is received by non-volatility memorizer；Start self test controller, determine each project to be tested of full test number of times and non-volatility memorizer；Non-volatility memorizer is tested according to each project to be tested by self test controller, until full test number of times is equal to the testing time of each project to be tested, or until the test result of any project to be tested fails for non-volatility memorizer；If the test result of any project to be tested fails for non-volatility memorizer, corresponding project fail message is recorded to the first default memory space of non-volatility memorizer by self test controller.It is simple and convenient the invention enables burn-in test, requirement of the burn-in test to test equipment is significantly reduced, testing cost is lower.
Description
Technical field
The present invention relates to memory technology field, more particularly to a kind of self-test of non-volatility memorizer
Method and a kind of self-test device of non-volatility memorizer.
Background technology
Memory is big due to capacity, and device density is high, there are problems that serious initial failure.This problem
Aggravate with the diminution of process.Relation between the failure probability and access times of memory meets
The characteristic of bathtub curve shown in Fig. 1, that is, the failure probability of memory is high when beginning to use, certain when reaching
The failure probability of access times background storage will be greatly reduced, the service life until reaching memory
Afterwards, the failure probability of memory may proceed to rise.The reliability of memory can be improved by burn-in test.
Burn-in test is repeatedly wiped memory, write, being read etc. and operated i.e. before dispatching from the factory, and is allowed in early days
The memory individual of failure is detected, and product failure probability when so dispatching from the factory is in bathtub
The bottom of curve, failure probability is greatly reduced.
Existing ageing testing method is to use aging testing apparatus, memory is wiped successively, write, school
Test and other required operations, and circulate specific number of times, so as to screen out the memory of initial failure
Body.
But, also had the following disadvantages in existing ageing testing method：Aging testing apparatus is powerful,
The programming operations of complexity can be carried out and memory is verified, therefore aging testing apparatus is expensive,
And the testing expense of unit interval is also costly；, it is necessary to always when memory is produced in batches
Change test equipment carry out erasing repeatedly to memory, write, read etc. to operate, the time is very long, due to aging
Test equipment is expensive, and the unit interval testing expense also costly, therefore, existing burn-in test
Method testing cost is very high, causes memory product cost increase.
The content of the invention
In view of the above problems, the purpose of the embodiment of the present invention be to provide a kind of non-volatility memorizer from
Method of testing and a kind of self-test device of non-volatility memorizer, to solve existing ageing testing method
Testing cost is very high, the problem of causing memory product cost increase.
In order to solve the above problems, the embodiment of the invention discloses a kind of self-test of non-volatility memorizer
Method, the non-volatility memorizer includes self test controller, the non-volatility memorizer and test
Equipment is connected, and the self-test method comprises the following steps：Institute is received by the non-volatility memorizer
State the startup self-test instruction of test equipment transmission；Start the self test controller, determine full test
Each project to be tested of number of times and the non-volatility memorizer；By the self test controller according to institute
State each project to be tested to test the non-volatility memorizer, until to each project to be tested
Testing time be equal to the full test number of times, or until the test result of any project to be tested is institute
State non-volatility memorizer failure；Wherein, if the test result of any project to be tested is described non-volatile
Property out of memory, then record corresponding project fail message to described non-by the self test controller
The default memory space of the first of volatile storage.
Alternatively, each item to be tested for determining full test number of times and the non-volatility memorizer
Mesh, including：Memory space, which is preset, from the second of the non-volatility memorizer obtains the full test
The corresponding data of number and the corresponding data of each project to be tested；According to full test number of times correspondence
Data determine the full test number of times, and determined according to the corresponding data of each project to be tested
Each project to be tested.
Alternatively, each item to be tested for determining full test number of times and the non-volatility memorizer
Mesh, including：From the startup built-in self test examination instruction obtain the corresponding data of the full test number of times and
The corresponding data of each project to be tested；According to being determined the corresponding data of the full test number of times
Full test number of times, and determine each item to be tested according to the corresponding data of each project to be tested
Mesh.
Alternatively, it is described non-to be waved to described according to each project to be tested by the self test controller
Hair property memory is tested, including：When the project to be tested is that erasing operation is tested, pass through institute
State self test controller and erasing operation and verification are carried out to the non-volatility memorizer, if verification failure,
Then judge that the test result of the project to be tested fails for the non-volatility memorizer；When described to be measured
When examination project is that write operation is tested, the non-volatility memorizer is carried out by the self test controller
Write operation and verification, if verification failure, judge that the test result of the project to be tested non-is waved to be described
The out of memory of hair property.
Alternatively, the self-test method of non-volatility memorizer also includes：Pass through the non-volatile holographic storage
Device receives the information reading instruction that the test equipment is sent；Institute is sent by the non-volatility memorizer
Information in the first default memory space is stated to the test equipment.
In order to solve the above problems, the embodiment of the invention also discloses a kind of testing oneself for non-volatility memorizer
Trial assembly is put, and the non-volatility memorizer includes self test controller, and the non-volatility memorizer is with surveying
Try equipment to be connected, the self-test device includes：First receiving module, for by described non-volatile
Memory receives the startup self-test instruction that the test equipment is sent；Starting module, it is described for starting
Self test controller, determines each project to be tested of full test number of times and the non-volatility memorizer；
Test module, for by the self test controller according to each project to be tested to described non-volatile
Property memory tested, until being equal to the full test to the testing time of each project to be tested
Number of times, or until the test result of any project to be tested fails for the non-volatility memorizer；Wherein,
If the test result of any project to be tested fails for the non-volatility memorizer, the test module
Corresponding project fail message is recorded to the non-volatility memorizer by the self test controller
First default memory space.
Alternatively, the starting module includes：First data capture unit, for from described non-volatile
Second default memory space of memory obtains the corresponding data of the full test number of times and described respectively treated
The corresponding data of test event；First parameter determination unit, for according to full test number of times correspondence
Data determine the full test number of times, and determined according to the corresponding data of each project to be tested
Each project to be tested.
Alternatively, the starting module includes：Second data capture unit, for from the startup aging
Self-test instruction obtains the corresponding data of full test number of times and each project to be tested is corresponding
Data；Second parameter determination unit, described in being determined according to the corresponding data of the full test number of times
Full test number of times, and determine each item to be tested according to the corresponding data of each project to be tested
Mesh.
Alternatively, the test module includes：First test cell, for being when the project to be tested
When erasing operation is tested, erasing behaviour is carried out to the non-volatility memorizer by the self test controller
Make and verify, if verification failure, judges the test result of the project to be tested to be described non-volatile
Out of memory；Second test cell, for when the project to be tested is that write operation is tested, passing through
The self test controller carries out write operation and verification to the non-volatility memorizer, if verification failure,
Then judge that the test result of the project to be tested fails for the non-volatility memorizer.
Alternatively, the self-test device of non-volatility memorizer also includes：Second receiving module, for leading to
Cross the non-volatility memorizer and receive the information reading instruction that the test equipment is sent；Sending module,
For sending the information in the described first default memory space by the non-volatility memorizer to described
Test equipment.
The embodiment of the present invention includes advantages below：Pass through the embedded self-test control in non-volatility memorizer
Device, and then after the startup self-test instruction that test equipment is sent is received by non-volatility memorizer, open
Dynamic self test controller, and by self test controller according to each project to be tested to non-volatility memorizer
Tested, until full test number of times is equal to the testing time of each project to be tested, or it is until any
The test result of project to be tested fails for non-volatility memorizer, now, is remembered by self test controller
Corresponding project fail message is recorded to the first default memory space of non-volatility memorizer.
So, to the main self-test in non-volatility memorizer of burn-in test of non-volatility memorizer
Controller is automatically performed, and the characteristics of utilization non-volatility memorizer, in self test controller to non-volatile
Property memory carry out the related information such as project fail message of record test during built-in self test examination, survey
Examination equipment need to only send the related information of read test after startup self-test instruction and can just realize to failure
Non-volatility memorizer is individual to be screened out, and test equipment without carry out last again to non-volatility memorizer
All over Full Featured test, the embodiment of the present invention not only simplify burn-in test flow, improve burn-in test
Convenience and batch production memory when output efficiency, also significantly reduce burn-in test to test set
Standby requirement, and then reduce aging of product testing cost.
Brief description of the drawings
Fig. 1 is the relation schematic diagram between the failure probability of memory and access times；
Fig. 2 is a kind of step flow of the self-test method embodiment of non-volatility memorizer of the present invention
Figure；
Fig. 3 is the step flow of the self-test method embodiment of another non-volatility memorizer of the present invention
Figure；
Fig. 4 is the step flow of the self-test method embodiment of another non-volatility memorizer of the present invention
Figure；
Fig. 5 is a kind of structured flowchart of the self-test device embodiment of non-volatility memorizer of the present invention；
Fig. 6 is the structural frames of the self-test device embodiment of another non-volatility memorizer of the present invention
Figure；
Fig. 7 is the structural frames of the self-test device embodiment of another non-volatility memorizer of the present invention
Figure.
Embodiment
In order to facilitate the understanding of the purposes, features and advantages of the present invention, below in conjunction with the accompanying drawings
The present invention is further detailed explanation with embodiment.
Embodiment one
Reference picture 2, shows a kind of self-test method embodiment of non-volatility memorizer of the present invention
Flow chart of steps, non-volatility memorizer include self test controller, self test controller can be embedded in or
It is integrated in inside non-volatility memorizer, non-volatility memorizer can pass through data-interface with test equipment
It is connected, self-test method specifically may include steps of：
S21, the startup self-test instruction that test equipment is sent is received by non-volatility memorizer.
Wherein, non-volatility memorizer (NVRAM, Non-volatile memory) refers to work as system
When closing or non-transformer supply, the memory that the information stored will not disappear.For example,
EPROM (Erasable Programmable Read-Only Memory, the read-only storage of erasable and programmable formula
Device), EEPROM (Electrically Erasable Programmable Read-Only Memory, electronics
Erasable programmable read-only storage, Flash memory (flash memories) etc..
S22, starts self test controller, determines respectively treating for full test number of times and non-volatility memorizer
Test event.
Specifically, it can be the finger for arbitrarily making self test controller enter test pattern to start self-test instruction
Order or command sequence.Specifically, if the executable operation of non-volatility memorizer is erasing operation, writes behaviour
Work, addressing operation, the modification operation such as data manipulation, then each project to be tested can for erasing operation test,
One or more of test events such as write operation test, addressing operation test, modification data manipulation test.
It should be noted that in other embodiments of the invention, the executable operation of non-volatility memorizer by
Non-volatility memorizer own situation is determined, can be erasing operation, write operation, addressing operation, modification
One or more of data manipulation or other operations.
S23, is tested non-volatility memorizer by self test controller according to each project to be tested,
Until being equal to full test number of times, or until any project to be tested to the testing time of each project to be tested
Test result be non-volatility memorizer failure；Wherein, if the test result of any project to be tested is
Non-volatility memorizer fails, then records corresponding project fail message by self test controller and waved to non-
First default memory space of hair property memory.
Wherein, in one embodiment of the invention, step S23 can by self test controller according to
Each project to be tested is tested non-volatility memorizer successively.To each project to be tested in step S23
Testing time it is to be understood that by self test controller according to each project to be tested successively to non-volatile
When property memory is tested, the number of times of circulation.The test result of any project to be tested is non-volatile
Out of memory, it can be understood as when the test result of any project to be tested is test crash, then certainly
Test controller judges that non-volatility memorizer fails.Specifically, project fail message can include failure
Project name, failure when testing time and other information related to project failure.
Specifically, in one embodiment of the invention, user can be only operated in non-volatility memorizer
Memory space in addition to the first default memory space, for example, for 1G non-volatility memorizer,
The physical memory space of non-volatility memorizer can add the first for 1G default memory space sum, user
The only operable 1G memory spaces.Wherein, the size of the first default memory space can be according to test need
Ask etc. and to be configured when producing non-volatility memorizer.
After step S23, test equipment need to only read the information of the first default memory space, it is possible to
It is determined that whether current non-volatility memorizer fails, and then determine whether to screen out current non-volatile holographic storage
Device, in this process, test equipment without carrying out last to the current non-volatility memorizer all over complete again
The test of function, therefore, not only simplify testing process, improve the convenience of burn-in test, also big
Width reduces the requirement to test equipment, and then reduces burn-in test cost, improves batch production storage
Output efficiency during device.
In one particular embodiment of the present invention, step S21 passes through non-volatility memorizer such as Flash
Startup self-test the instruction such as A1, step S22 that memory receives test equipment transmission start non-volatile
Property memory in self test controller, and determine full test number of times such as 10 times and non-volatile deposit
Each project to be tested of reservoir such as erasing operation test and write operation test, step S23 pass through self-test
Controller carries out erasing operation test to non-volatility memorizer successively according to each project to be tested and writes behaviour
Test, until the number of times of circulation is equal to 10 times, or until in erasing operation test and write operation test
The test result of any project to be tested fails for non-volatility memorizer.When behaviour is tested and write to erasing operation
When the test result of any project to be tested is that non-volatility memorizer fails in testing, pass through self-test
Controller records testing time of the corresponding project fail message such as when project name, the failure of failure
First to non-volatility memorizer presets memory space.
The embodiment of the present invention one includes advantages below：Pass through the embedded self-test control in non-volatility memorizer
Device processed, and then after the startup self-test instruction that test equipment is sent is received by non-volatility memorizer,
Start self test controller, and by self test controller according to each project to be tested to non-volatile holographic storage
Device is tested, until being equal to full test number of times to the testing time of each project to be tested, or until is appointed
The test result of one project to be tested fails for non-volatility memorizer, now, passes through self test controller
Corresponding project fail message is recorded to the first default memory space of non-volatility memorizer.
So, to the main self-test in non-volatility memorizer of burn-in test of non-volatility memorizer
Controller is automatically performed, and the characteristics of utilization non-volatility memorizer, in self test controller to non-volatile
Property memory carry out the related information such as project fail message of record test during built-in self test examination, survey
Examination equipment need to be only sent after startup self-test instruction, and the related information of read test can be just completed to failure
Non-volatility memorizer is individual to be screened out, and test equipment without carry out last again to non-volatility memorizer
All over Full Featured test, the embodiment of the present invention not only simplify burn-in test flow, improve burn-in test
Convenience and batch production memory when output efficiency, also significantly reduce burn-in test to test set
Standby requirement, and then reduce aging of product testing cost.
Embodiment two
Reference picture 3, shows the self-test method embodiment of another non-volatility memorizer of the present invention
Step flow chart, non-volatility memorizer can include self test controller, non-volatility memorizer with
Test equipment is connected, and self-test method specifically may include steps of：
S31, the startup self-test instruction that test equipment is sent is received by non-volatility memorizer.
S32, starts self test controller, determines respectively treating for full test number of times and non-volatility memorizer
Test event；Each project to be tested of full test number of times and non-volatility memorizer is determined, can be included：
S321, presets memory space acquisition full test number of times corresponding from the second of non-volatility memorizer
Data and the corresponding data of each project to be tested.
S322, full test number of times is determined according to the corresponding data of full test number of times, and according to respectively treating
The corresponding data of test event determine each project to be tested.
Wherein, full test number of times and each project to be tested can be according to non-volatility memorizer characteristic, surveys
Examination demand etc. is configured when producing non-volatility memorizer.
S33, is tested non-volatility memorizer by self test controller according to each project to be tested,
Until being equal to full test number of times, or until any project to be tested to the testing time of each project to be tested
Test result be non-volatility memorizer failure；Wherein, if the test result of any project to be tested is
Non-volatility memorizer fails, then records corresponding project fail message by self test controller and waved to non-
First default memory space of hair property memory；Wherein, by self test controller according to each item to be tested
Mesh is tested non-volatility memorizer, can be included：
S331, when project to be tested is that erasing operation is tested, by self test controller to non-volatile
Memory carries out erasing operation and verification, if verification failure, the test result for judging project to be tested is
Non-volatility memorizer fails.
S332, when project to be tested is that write operation is tested, is deposited by self test controller to non-volatile
Reservoir carries out write operation and verification, if verification failure, judges that the test result of project to be tested is waved to be non-
The out of memory of hair property.
S333, when project to be tested is other operations survey in addition to erasing operation is tested, write operation is tested
During examination, non-volatility memorizer is carried out by self test controller to operate and verify accordingly, if verification
Failure, then judge that the test result of project to be tested fails for non-volatility memorizer.
In another embodiment of the present invention, step S33 by self test controller according to each to be measured
During examination project is tested non-volatility memorizer, it can also be recorded by self test controller
Corresponding project presets memory space by the first of information to non-volatility memorizer or other storages are empty
Between.Wherein, project by information can for pass through project name, by when testing time etc..
S34, the information reading instruction that test equipment is sent is received by non-volatility memorizer.
S35, passes through the information in the default memory space of non-volatility memorizer transmission first to test equipment.
So as to which test equipment can be with read test related information (such as project fail message and/or project
By information), and then complete to screen out failure non-volatility memorizer individual, during being somebody's turn to do, test
Equipment need to only send startup self-test instruction and information reads instruction, and test equipment to non-volatile without depositing
Reservoir carries out last all over Full Featured test again, therefore, can not only simplify burn-in test flow, carry
The output efficiency when convenience and batch production memory of high burn-in test, can also be greatly reduced aging
The requirement to test equipment is tested, and then reduces aging of product testing cost.
Specifically, in one embodiment of the invention, user can be only operated in non-volatility memorizer
Memory space in addition to the first default memory space, the second default memory space, for example, for 1G
Non-volatility memorizer, it is default that the physical memory space of non-volatility memorizer can add the first for 1G
Memory space and the second default memory space sum, the only operable 1G memory spaces of user.Wherein,
First default memory space, the size of the second default memory space can produce non-according to testing requirement etc.
It is configured during volatile storage.
The embodiment of the present invention two includes advantages below：Pass through the embedded self-test control in non-volatility memorizer
Device processed, and then after the startup self-test instruction that test equipment is sent is received by non-volatility memorizer,
Start self test controller, and by self test controller according to each to be measured in the second default memory space
Examination project is tested non-volatility memorizer, until being equal to the to the testing time of each project to be tested
Full test number of times in two default memory spaces, or until the test result of any project to be tested is non-
Volatile storage fails, and recording the project in test process by self test controller passes through information, item
Mesh fail message is to the first default memory space, finally by information of the non-volatility memorizer according to reception
Read and instruct, the information in the default memory space of transmission first to test equipment.
So, to the main self-test in non-volatility memorizer of burn-in test of non-volatility memorizer
Controller is automatically performed, and the characteristics of utilization non-volatility memorizer, in self test controller to non-volatile
Property memory carry out the related information such as project fail message of record test during built-in self test examination and/
Or project is by information, test equipment need to only send startup self-test instruction and information reads instruction, so that it may
To complete to screen out failure non-volatility memorizer individual, test equipment is without to non-volatility memorizer
Last is carried out again all over Full Featured test, and the embodiment of the present invention not only simplify burn-in test flow, carry
Output efficiency during the high convenience and batch production memory of burn-in test, also significantly reduces aging
The requirement to test equipment is tested, and then reduces aging of product testing cost.
Embodiment three
Reference picture 4, shows the self-test method embodiment of another non-volatility memorizer of the present invention
Step flow chart, non-volatility memorizer can include self test controller, non-volatility memorizer with
Test equipment is connected, and self-test method specifically may include steps of：
S41, the startup self-test instruction that test equipment is sent is received by non-volatility memorizer.
S42, starts self test controller, determines respectively treating for full test number of times and non-volatility memorizer
Test event；Each project to be tested of full test number of times and non-volatility memorizer is determined, can be included：
S421, the corresponding data of full test number of times are obtained and each to be tested from built-in self test examination instruction is started
The corresponding data of project.
Specifically, it can be to include the corresponding data of full test number of times and each to be measured to start self-test instruction
Any command sequence for making self test controller enter test pattern of the corresponding data of examination project.Tester
Member can be set by test equipment starts in self-test instruction the corresponding data of full test number of times and each
The corresponding data of project to be tested, to obtain optimal test effect.
S422, full test number of times is determined according to the corresponding data of full test number of times, and according to respectively treating
The corresponding data of test event determine each project to be tested.
In one embodiment of the invention, non-volatility memorizer can store bulleted list to be tested,
Start mark of each project to be tested in bulleted list to be tested defined in self-test instruction, then step
S42 can determine each project to be tested by inquiring about bulleted list to be tested.Refer to for example, starting self-test
Order can be A1B1B2B30A, wherein, A1 is the mark for making self test controller enter test pattern,
B1, B2, B3 are mark of each project to be tested in bulleted list to be tested, and 0A is full test
Number.
In another embodiment of the present invention, the corresponding data of each test event in self-test instruction are started
It can be the type of each project to be tested.For example, it can be A10AC1C2C3 to start self-test instruction,
Wherein, A1 is the mark for making self test controller enter test pattern, and 0A is full test number of times, C1
For erasing operation test, the test of C2 write operations, C3 modification data manipulation tests.Then step S422 can
Directly to determine each project to be tested.
S43, is tested non-volatility memorizer by self test controller according to each project to be tested,
Until being equal to full test number of times, or until any project to be tested to the testing time of each project to be tested
Test result be non-volatility memorizer failure；Wherein, if the test result of any project to be tested is
Non-volatility memorizer fails, then records corresponding project fail message by self test controller and waved to non-
First default memory space of hair property memory；Wherein, by self test controller according to each item to be tested
Mesh is tested non-volatility memorizer, can be included：
S431, when project to be tested is that erasing operation is tested, by self test controller to non-volatile
Memory carries out erasing operation and verification, if verification failure, the test result for judging project to be tested is
Non-volatility memorizer fails.
S432, when project to be tested is that write operation is tested, is deposited by self test controller to non-volatile
Reservoir carries out write operation and verification, if verification failure, judges that the test result of project to be tested is waved to be non-
The out of memory of hair property.
S433, when project to be tested is other operations survey in addition to erasing operation is tested, write operation is tested
During examination, non-volatility memorizer is carried out by self test controller to operate and verify accordingly, if verification
Failure, then judge that the test result of project to be tested fails for non-volatility memorizer.
In another embodiment of the present invention, step S433 by self test controller according to respectively treating
During test event is tested non-volatility memorizer, it can also be remembered by self test controller
Record corresponding project and pass through the first default memory space of information to non-volatility memorizer or other storages
Space.Wherein, project by information can for pass through project name, by when testing time etc..
S44, the information reading instruction that test equipment is sent is received by non-volatility memorizer.
S45, passes through the information in the default memory space of non-volatility memorizer transmission first to test equipment.
So as to which test equipment can be with read test related information (such as project fail message and/or project
By information), and then complete to screen out failure non-volatility memorizer individual, during being somebody's turn to do, test
Equipment need to only send startup self-test instruction and information reads instruction, and test equipment to non-volatile without depositing
Reservoir carries out last all over Full Featured test again, therefore, not only simplify burn-in test flow, improves
The output efficiency when convenience and batch production memory of burn-in test, also significantly reduces aging survey
The requirement to test equipment is tried, and then reduces aging of product testing cost.
The embodiment of the present invention three includes advantages below：Pass through the embedded self-test control in non-volatility memorizer
Device processed, and then after the startup self-test instruction that test equipment is sent is received by non-volatility memorizer,
Start self test controller, and it is each to be tested in self-test instruction according to starting by self test controller
Project is tested non-volatility memorizer, until being equal to startup to the testing time of each project to be tested
Full test number of times in self-test instruction, or until the test result of any project to be tested is non-volatile
Property out of memory, by self test controller record test process in project pass through information, project lose
Information is imitated to the first default memory space, is read finally by non-volatility memorizer according to the information of reception
Instruct, the information in the default memory space of transmission first to test equipment.
So, to the main self-test in non-volatility memorizer of burn-in test of non-volatility memorizer
Controller is automatically performed, and the characteristics of utilization non-volatility memorizer, in self test controller to non-volatile
Property memory carry out the related information such as project fail message of record test during built-in self test examination and/
Or project is by information, test equipment need to only send startup self-test instruction and information reads instruction, so that it may
To complete to screen out failure non-volatility memorizer individual, test equipment is without to non-volatility memorizer
Last is carried out again all over Full Featured test, and the embodiment of the present invention not only simplify burn-in test flow, carry
Output efficiency during the high convenience and batch production memory of burn-in test, also significantly reduces aging
The requirement to test equipment is tested, and then reduces aging of product testing cost.
It should be noted that for embodiment of the method, in order to be briefly described, therefore it is all expressed as to one it is
The combination of actions of row, but those skilled in the art should know that the embodiment of the present invention is not by described
Sequence of movement limitation because according to the embodiment of the present invention, some steps can using other orders or
Person is carried out simultaneously.Secondly, those skilled in the art should also know, embodiment described in this description
Belong to necessary to preferred embodiment, the involved action not necessarily embodiment of the present invention.
Example IV
Reference picture 5, shows a kind of self-test device embodiment of non-volatility memorizer of the present invention
Structured flowchart, non-volatility memorizer includes self test controller, non-volatility memorizer and test equipment
It is connected, self-test device can specifically include following module：
First receiving module 51, for receiving the startup of test equipment transmission by non-volatility memorizer certainly
Test instruction.
Starting module 52, for starting self test controller, determines full test number of times and non-volatile deposits
Each project to be tested of reservoir.
Test module 53, for by self test controller according to each project to be tested to non-volatile holographic storage
Device is tested, until being equal to full test number of times to the testing time of each project to be tested, or until is appointed
The test result of one project to be tested fails for non-volatility memorizer；Wherein, if any project to be tested
Test result be non-volatility memorizer failure, then test module 53 is recorded by self test controller
Corresponding project fail message to non-volatility memorizer first preset memory space.
The embodiment of the present invention four includes advantages below：Pass through the embedded self-test control in non-volatility memorizer
Device processed, so when the first receiving module by non-volatility memorizer receive test equipment send startup from
Test instruction after, starting module start self test controller, test module by self test controller according to
Each project to be tested is tested non-volatility memorizer, until to the testing time of each project to be tested
Equal to full test number of times, or until the test result of any project to be tested is lost for non-volatility memorizer
Effect, now, test module record corresponding project fail message to non-volatile by self test controller
The default memory space of the first of memory.
So, to the main self-test in non-volatility memorizer of burn-in test of non-volatility memorizer
Controller is automatically performed, and the characteristics of utilization non-volatility memorizer, in self test controller to non-volatile
Property memory carry out the related information such as project fail message of record test during built-in self test examination, survey
Examination equipment need to be only sent after startup self-test instruction, and the related information of read test can be just completed to failure
Non-volatility memorizer is individual to be screened out, and test equipment without carry out last again to non-volatility memorizer
All over Full Featured test, the embodiment of the present invention not only simplify burn-in test flow, improve burn-in test
Convenience and batch production memory when output efficiency, also significantly reduce burn-in test to test set
Standby requirement, and then reduce aging of product testing cost.
Embodiment five
Reference picture 6, shows the self-test device embodiment of another non-volatility memorizer of the present invention
Structured flowchart, non-volatility memorizer includes self test controller, and non-volatility memorizer sets with test
Standby to be connected, self-test device can specifically include following module：
First receiving module 61, for receiving the startup of test equipment transmission by non-volatility memorizer certainly
Test instruction.
Starting module 62, for starting self test controller, determines full test number of times and non-volatile deposits
Each project to be tested of reservoir；Starting module 62 can include：
First data capture unit 621, is obtained for presetting memory space from the second of non-volatility memorizer
Take the corresponding data of full test number of times and the corresponding data of each project to be tested.
First parameter determination unit 622, for determining maximum survey according to the corresponding data of full test number of times
Number of times is tried, and each project to be tested is determined according to the corresponding data of each project to be tested.
Test module 63, for by self test controller according to each project to be tested to non-volatile holographic storage
Device is tested, until being equal to full test number of times to the testing time of each project to be tested, or until is appointed
The test result of one project to be tested fails for non-volatility memorizer；Wherein, if any project to be tested
Test result be non-volatility memorizer failure, then test module 63 is recorded by self test controller
Corresponding project fail message to non-volatility memorizer first preset memory space.Test module 63
It can include：
First test cell 631, for when project to be tested is that erasing operation is tested, passing through self-test
Controller carries out erasing operation and verification to non-volatility memorizer, if verification failure, judges to be tested
The test result of project fails for non-volatility memorizer.
Second test cell 632, for when project to be tested is that write operation is tested, passing through self-test control
Device processed carries out write operation and verification to non-volatility memorizer, if verification failure, judges project to be tested
Test result be non-volatility memorizer failure.
3rd test cell 633, for being except erasing operation test, write operation test when project to be tested
Outside other operations test when, non-volatility memorizer is grasped accordingly by self test controller
Make and verify, if verification failure, judge that the test result of project to be tested is lost for non-volatility memorizer
Effect.
Second receiving module 64, for receiving the information reading that test equipment is sent by non-volatility memorizer
Instruction fetch.
Sending module 65, for sending the information in the first default memory space by non-volatility memorizer
To test equipment.
The embodiment of the present invention five includes advantages below：Pass through the embedded self-test control in non-volatility memorizer
Device processed, so when the first receiving module by non-volatility memorizer receive test equipment send startup from
Test instruction after, starting module start self test controller, test module by self test controller according to
Each project to be tested in second default memory space is tested non-volatility memorizer, until to each
The testing time of project to be tested is equal to the full test number of times in the second default memory space, or until appoints
The test result of one project to be tested fails for non-volatility memorizer, wherein, test module is by testing oneself
The project tried in controller record test process is empty to the first default storage by information, project fail message
Between, the second last receiving module is read by non-volatility memorizer receive information and instructed, and sending module leads to
Cross non-volatility memorizer and send information in the first default memory space to test equipment.
So, to the main self-test in non-volatility memorizer of burn-in test of non-volatility memorizer
Controller is automatically performed, and the characteristics of utilization non-volatility memorizer, in self test controller to non-volatile
Property memory carry out the related information such as project fail message of record test during built-in self test examination and/
Or project is by information, test equipment need to only send startup self-test instruction and information reads instruction, so that it may
To complete to screen out failure non-volatility memorizer individual, test equipment is without to non-volatility memorizer
Last is carried out again all over Full Featured test, and the embodiment of the present invention not only simplify burn-in test flow, carry
Output efficiency during the high convenience and batch production memory of burn-in test, also significantly reduces aging
The requirement to test equipment is tested, and then reduces aging of product testing cost.
Embodiment six
Reference picture 7, shows the self-test device embodiment of another non-volatility memorizer of the present invention
Structured flowchart, non-volatility memorizer includes self test controller, and non-volatility memorizer sets with test
Standby to be connected, self-test device can specifically include following module：
First receiving module 71, for receiving the startup of test equipment transmission by non-volatility memorizer certainly
Test instruction.
Starting module 72, for starting self test controller, determines full test number of times and non-volatile deposits
Each project to be tested of reservoir；Starting module 72 can include：
Second data capture unit 721, for obtaining full test number of times from startup built-in self test examination instruction
Corresponding data and the corresponding data of each project to be tested.
Second parameter determination unit 722, for determining maximum survey according to the corresponding data of full test number of times
Number of times is tried, and each project to be tested is determined according to the corresponding data of each project to be tested.
Test module 73, for by self test controller according to each project to be tested to non-volatile holographic storage
Device is tested, until being equal to full test number of times to the testing time of each project to be tested, or until is appointed
The test result of one project to be tested fails for non-volatility memorizer；Wherein, if any project to be tested
Test result be non-volatility memorizer failure, then test module 73 is recorded by self test controller
Corresponding project fail message to non-volatility memorizer first preset memory space.Test module 73
It can include：
First test cell 731, for when project to be tested is that erasing operation is tested, passing through self-test
Controller carries out erasing operation and verification to non-volatility memorizer, if verification failure, judges to be tested
The test result of project fails for non-volatility memorizer.
Second test cell 732, for when project to be tested is that write operation is tested, passing through self-test control
Device processed carries out write operation and verification to non-volatility memorizer, if verification failure, judges project to be tested
Test result be non-volatility memorizer failure.
3rd test cell 733, for being except erasing operation test, write operation test when project to be tested
Outside other operations test when, non-volatility memorizer is grasped accordingly by self test controller
Make and verify, if verification failure, judge that the test result of project to be tested is lost for non-volatility memorizer
Effect.
Second receiving module 74, for receiving the information reading that test equipment is sent by non-volatility memorizer
Instruction fetch.
Sending module 75, for sending the information in the first default memory space by non-volatility memorizer
To test equipment.
The embodiment of the present invention six includes advantages below：Pass through the embedded self-test control in non-volatility memorizer
Device processed, so when the first receiving module by non-volatility memorizer receive test equipment send startup from
Test instruction after, starting module start self test controller, test module by self test controller according to
Each project to be tested started in self-test instruction is tested non-volatility memorizer, until to respectively treating
The testing time of test event is equal to the full test number of times started in self-test instruction, or until any treat
The test result of test event fails for non-volatility memorizer, wherein, test module passes through self-test control
Project in device record test process processed presets memory space by information, project fail message to first,
The second last receiving module is read by non-volatility memorizer receive information and instructed, and sending module passes through non-
Volatile storage sends information in the first default memory space to test equipment.
So, to the main self-test in non-volatility memorizer of burn-in test of non-volatility memorizer
Controller is automatically performed, and the characteristics of utilization non-volatility memorizer, in self test controller to non-volatile
Property memory carry out the related information such as project fail message of record test during built-in self test examination and/
Or project is by information, test equipment need to only send startup self-test instruction and information reads instruction, so that it may
To complete to screen out failure non-volatility memorizer individual, test equipment is without to non-volatility memorizer
Last is carried out again all over Full Featured test, and the embodiment of the present invention not only simplify burn-in test flow, carry
Output efficiency during the high convenience and batch production memory of burn-in test, also significantly reduces aging
The requirement to test equipment is tested, and then reduces aging of product testing cost.
For device embodiment, because it is substantially similar to embodiment of the method, so the comparison of description
Simply, the relevent part can refer to the partial explaination of embodiments of method.
Each embodiment in this specification is described by the way of progressive, and each embodiment is stressed
Be all between difference with other embodiment, each embodiment identical similar part mutually referring to
.
It should be understood by those skilled in the art that, the embodiment of the embodiment of the present invention can be provided as method, dress
Put or computer program product.Therefore, the embodiment of the present invention can using complete hardware embodiment, completely
The form of embodiment in terms of software implementation or combination software and hardware.Moreover, the embodiment of the present invention
Can use can be situated between in one or more computers for wherein including computer usable program code with storage
The computer journey that matter is implemented on (including but is not limited to magnetic disk storage, CD-ROM, optical memory etc.)
The form of sequence product.
The embodiment of the present invention is with reference to method according to embodiments of the present invention, terminal device (system) and meter
The flow chart and/or block diagram of calculation machine program product is described.It should be understood that can be by computer program instructions
Each flow and/or square frame and flow chart and/or square frame in implementation process figure and/or block diagram
The combination of flow and/or square frame in figure.Can provide these computer program instructions to all-purpose computer,
The processor of special-purpose computer, Embedded Processor or other programmable data processing terminal equipments is to produce
One machine so that pass through the computing devices of computer or other programmable data processing terminal equipments
Instruction produce be used to realize in one flow of flow chart or multiple flows and/or one square frame of block diagram or
The device for the function of being specified in multiple square frames.
These computer program instructions, which may be alternatively stored in, can guide computer or other programmable datas to handle
In the computer-readable memory that terminal device works in a specific way so that be stored in this computer-readable
Instruction in memory, which is produced, includes the manufacture of command device, and command device realization is in flow chart one
The function of being specified in flow or multiple flows and/or one square frame of block diagram or multiple square frames.
These computer program instructions can also be loaded into computer or other programmable data processing terminals are set
It is standby upper so that series of operation steps is performed on computer or other programmable terminal equipments in terms of producing
The processing that calculation machine is realized, so that the instruction performed on computer or other programmable terminal equipments provides use
In realization in one flow of flow chart or multiple flows and/or one square frame of block diagram or multiple square frames
The step of function of specifying.
Although having been described for the preferred embodiment of the embodiment of the present invention, those skilled in the art are once
Basic creative concept is known, then other change and modification can be made to these embodiments.So,
Appended claims are intended to be construed to include preferred embodiment and fall into the institute of range of embodiment of the invention
Have altered and change.
Finally, in addition it is also necessary to explanation, herein, such as first and second or the like relational terms
It is used merely to make a distinction an entity or operation with another entity or operation, and not necessarily requires
Or imply between these entities or operation there is any this actual relation or order.Moreover, art
Language " comprising ", "comprising" or any other variant thereof is intended to cover non-exclusive inclusion, so that
Process, method, article or terminal device including a series of key elements not only include those key elements, and
Also include other key elements for being not expressly set out, or also include for this process, method, article or
The intrinsic key element of person's terminal device.In the absence of more restrictions, by sentence " including one
It is individual ... " limit key element, it is not excluded that at the process including the key element, method, article or end
Also there is other identical element in end equipment.
To a kind of self-test method of non-volatility memorizer provided by the present invention and a kind of non-wave above
The self-test device of hair property memory, is described in detail, and specific case used herein is to this hair
Bright principle and embodiment is set forth, and the explanation of above example is only intended to help and understands this hair
Bright method and its core concept；Simultaneously for those of ordinary skill in the art, according to the present invention's
Thought, will change in specific embodiments and applications, in summary, this specification
Content should not be construed as limiting the invention.
Claims (10)
1. a kind of self-test method of non-volatility memorizer, it is characterised in that described non-volatile to deposit
Reservoir includes self test controller, and the non-volatility memorizer is connected with test equipment, the self-test
Method comprises the following steps：
The startup self-test instruction that the test equipment is sent is received by the non-volatility memorizer；
Start the self test controller, determine each of full test number of times and the non-volatility memorizer
Project to be tested；
By the self test controller according to each project to be tested to the non-volatility memorizer
Tested, until the full test number of times is equal to the testing time of each project to be tested, or
Until the test result of any project to be tested fails for the non-volatility memorizer；
Wherein, if the test result of any project to be tested fails for the non-volatility memorizer, lead to
Cross the self test controller and record corresponding project fail message to the of the non-volatility memorizer
One default memory space.
2. according to the method described in claim 1, it is characterised in that the determination full test number of times
With each project to be tested of the non-volatility memorizer, including：
Memory space, which is preset, from the second of the non-volatility memorizer obtains the full test number of times pair
The data answered and the corresponding data of each project to be tested；
The full test number of times is determined according to the corresponding data of the full test number of times, and according to institute
State the corresponding data of each project to be tested and determine each project to be tested.
3. according to the method described in claim 1, it is characterised in that the determination full test number of times
With each project to be tested of the non-volatility memorizer, including：
The corresponding data of the full test number of times are obtained from the startup built-in self test examination instruction and described
The corresponding data of each project to be tested；
The full test number of times is determined according to the corresponding data of the full test number of times, and according to institute
State the corresponding data of each project to be tested and determine each project to be tested.
4. according to the method described in claim 1, it is characterised in that described to pass through the self-test control
Device processed is tested the non-volatility memorizer according to each project to be tested, including：
When the project to be tested is that erasing operation is tested, by the self test controller to described non-
Volatile storage carries out erasing operation and verification, if verification failure, judges the project to be tested
Test result fails for the non-volatility memorizer；
When the project to be tested is that write operation is tested, non-waved to described by the self test controller
Hair property memory carries out write operation and verification, if verification failure, judges the test of the project to be tested
As a result failed for the non-volatility memorizer.
5. the method according to any one of claim 1-4, it is characterised in that also include：
The information reading instruction that the test equipment is sent is received by the non-volatility memorizer；
Information in described first default memory space is sent to described by the non-volatility memorizer
Test equipment.
6. a kind of self-test device of non-volatility memorizer, it is characterised in that described non-volatile to deposit
Reservoir includes self test controller, and the non-volatility memorizer is connected with test equipment, the self-test
Device includes：
First receiving module, for receiving what the test equipment was sent by the non-volatility memorizer
Start self-test instruction；
Starting module, for starting the self test controller, determines full test number of times and described non-waves
Each project to be tested of hair property memory；
Test module, for by the self test controller according to each project to be tested to described non-
Volatile storage is tested, until being equal to the maximum to the testing time of each project to be tested
Testing time, or until the test result of any project to be tested fails for the non-volatility memorizer；
Wherein, if the test result of any project to be tested fails for the non-volatility memorizer, institute
State test module and corresponding project fail message is recorded to described non-volatile by the self test controller
Property memory the first default memory space.
7. device according to claim 6, it is characterised in that the starting module includes：
First data capture unit, is obtained for presetting memory space from the second of the non-volatility memorizer
Take the corresponding data of the full test number of times and the corresponding data of each project to be tested；
First parameter determination unit, for described in being determined according to the corresponding data of the full test number of times most
Big testing time, and determine each item to be tested according to the corresponding data of each project to be tested
Mesh.
8. device according to claim 6, it is characterised in that the starting module includes：
Second data capture unit, for obtaining the full test from the startup built-in self test examination instruction
The corresponding data of number of times and the corresponding data of each project to be tested；
Second parameter determination unit, for described in being determined according to the corresponding data of the full test number of times most
Big testing time, and determine each item to be tested according to the corresponding data of each project to be tested
Mesh.
9. device according to claim 6, it is characterised in that the test module includes：
First test cell, for when the project to be tested be erasing operation test when, by it is described from
Test controller carries out erasing operation and verification to the non-volatility memorizer, if verification failure, sentences
The test result for the project to be tested of breaking fails for the non-volatility memorizer；
Second test cell, for when the project to be tested is that write operation is tested, being tested oneself by described
Try controller and write operation and verification are carried out to the non-volatility memorizer, if verification failure, judges institute
The test result of project to be tested is stated to fail for the non-volatility memorizer.
10. the device according to any one of claim 6-9, it is characterised in that also include：
Second receiving module, for receiving what the test equipment was sent by the non-volatility memorizer
Information reads instruction；
Sending module, for being sent by the non-volatility memorizer in the described first default memory space
Information to the test equipment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610255836.5A CN107305789B (en) | 2016-04-21 | 2016-04-21 | Self-testing method and device of non-volatile memory |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610255836.5A CN107305789B (en) | 2016-04-21 | 2016-04-21 | Self-testing method and device of non-volatile memory |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107305789A true CN107305789A (en) | 2017-10-31 |
| CN107305789B CN107305789B (en) | 2020-08-07 |
Family
ID=60152643
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610255836.5A Active CN107305789B (en) | 2016-04-21 | 2016-04-21 | Self-testing method and device of non-volatile memory |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107305789B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110716126A (en) * | 2019-10-14 | 2020-01-21 | 珠海亿智电子科技有限公司 | Chip aging test system, method and device |
| CN113049939A (en) * | 2019-12-27 | 2021-06-29 | 中移物联网有限公司 | Chip aging self-testing method and system |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1407560A (en) * | 2001-09-05 | 2003-04-02 | 富士通株式会社 | Semiconductor device equiped with memory and logical chips for testing memory ships |
| CN1475015A (en) * | 2000-09-18 | 2004-02-11 | ض� | Memory module and memory component with built-in self test function |
| CN1750172A (en) * | 2004-09-08 | 2006-03-22 | 三星电子株式会社 | Non-volatile memory device and method of testing thereof with test data buffers |
| CN101083140A (en) * | 2006-05-31 | 2007-12-05 | 国际商业机器公司 | Concurrent hardware selftest for central storage |
| CN102592679A (en) * | 2011-01-13 | 2012-07-18 | 北京兆易创新科技有限公司 | Flash memory chip and testing method thereof |
| CN102842342A (en) * | 2011-06-20 | 2012-12-26 | 鸿富锦精密工业（深圳）有限公司 | Test system and method for data storage |
| JP2013065365A (en) * | 2011-09-15 | 2013-04-11 | Toshiba Corp | Nonvolatile semiconductor memory device and testing method therefor |
| JP2013093076A (en) * | 2011-10-25 | 2013-05-16 | Lapis Semiconductor Co Ltd | Semiconductor memory device and test method thereof |
| CN104412327A (en) * | 2013-01-02 | 2015-03-11 | 默思股份有限公司 | Built in self-testing and repair device and method |
| CN105427891A (en) * | 2015-11-11 | 2016-03-23 | 北京同方微电子有限公司 | Automatic endurance test device and test method of discrete memory |
-
2016
- 2016-04-21 CN CN201610255836.5A patent/CN107305789B/en active Active
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1475015A (en) * | 2000-09-18 | 2004-02-11 | ض� | Memory module and memory component with built-in self test function |
| CN1407560A (en) * | 2001-09-05 | 2003-04-02 | 富士通株式会社 | Semiconductor device equiped with memory and logical chips for testing memory ships |
| CN1750172A (en) * | 2004-09-08 | 2006-03-22 | 三星电子株式会社 | Non-volatile memory device and method of testing thereof with test data buffers |
| CN101083140A (en) * | 2006-05-31 | 2007-12-05 | 国际商业机器公司 | Concurrent hardware selftest for central storage |
| CN102592679A (en) * | 2011-01-13 | 2012-07-18 | 北京兆易创新科技有限公司 | Flash memory chip and testing method thereof |
| CN102842342A (en) * | 2011-06-20 | 2012-12-26 | 鸿富锦精密工业（深圳）有限公司 | Test system and method for data storage |
| JP2013065365A (en) * | 2011-09-15 | 2013-04-11 | Toshiba Corp | Nonvolatile semiconductor memory device and testing method therefor |
| JP2013093076A (en) * | 2011-10-25 | 2013-05-16 | Lapis Semiconductor Co Ltd | Semiconductor memory device and test method thereof |
| CN104412327A (en) * | 2013-01-02 | 2015-03-11 | 默思股份有限公司 | Built in self-testing and repair device and method |
| CN105427891A (en) * | 2015-11-11 | 2016-03-23 | 北京同方微电子有限公司 | Automatic endurance test device and test method of discrete memory |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110716126A (en) * | 2019-10-14 | 2020-01-21 | 珠海亿智电子科技有限公司 | Chip aging test system, method and device |
| CN113049939A (en) * | 2019-12-27 | 2021-06-29 | 中移物联网有限公司 | Chip aging self-testing method and system |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107305789B (en) | 2020-08-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101661799B (en) | Programmable self-test for random access memories | |
| CN106556793B (en) | Chip test system and test method | |
| CN109062802A (en) | A kind of method for testing software, computer readable storage medium and terminal device | |
| US6981188B2 (en) | Non-volatile memory device with self test | |
| CN104979018B (en) | The method for testing semiconductor memory | |
| KR100278827B1 (en) | Memory tester | |
| CN110413512A (en) | AB test method, device, computer equipment and storage medium | |
| CN102467974A (en) | Embedded test module and diagnosis method thereof | |
| CN108694989A (en) | Storage device and its bad block assigning method | |
| CN109726134A (en) | Interface test method and system | |
| CN107305789A (en) | The self-test method and device of a kind of non-volatility memorizer | |
| CN109273039A (en) | A kind of erasing verifying device and method of flash memories | |
| CN116343888A (en) | Verification method of memory chip, electronic equipment and memory medium | |
| CN108231121A (en) | Semiconductor storage and its method for setting operations | |
| CN106971757A (en) | A kind of method and system of inspection Nand Flash mass | |
| CN110442491A (en) | A kind of method based on SPECPower testing server performance peak value, equipment and readable medium | |
| CN112233718B (en) | Fault location analysis method and device for storage unit, storage medium and terminal | |
| CN109656817A (en) | A kind of automation interface test device and equipment | |
| CN110287121A (en) | A kind of test method and device automating use-case | |
| CN116434816A (en) | Self-checking method and device for Flash memory built in chip and computer equipment | |
| CN105989888A (en) | Nonvolatile memory device, operating method thereof, and test system having the same | |
| CN113421605B (en) | Electric energy meter memory life test method and device | |
| CN107305790A (en) | The self-test method and device of a kind of non-volatility memorizer | |
| CN110221955A (en) | Test report generating means | |
| CN107305792A (en) | A kind of method and apparatus for testing memory |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address | ||
| CP03 | Change of name, title or address |
Address after: Room 101, Floor 1-5, Building 8, Yard 9, Fenghao East Road, Haidian District, Beijing 100094 Patentee after: Zhaoyi Innovation Technology Group Co.,Ltd. Address before: 100083 12 Floors, Block A, Tiangong Building, Science and Technology University, 30 College Road, Haidian District, Beijing Patentee before: GIGADEVICE SEMICONDUCTOR(BEIJING) Inc. |