CN107302029A - The silicon substrate of internet of things oriented has the MOSFET element of heat to electricity conversion function - Google Patents
The silicon substrate of internet of things oriented has the MOSFET element of heat to electricity conversion function Download PDFInfo
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- CN107302029A CN107302029A CN201710555931.1A CN201710555931A CN107302029A CN 107302029 A CN107302029 A CN 107302029A CN 201710555931 A CN201710555931 A CN 201710555931A CN 107302029 A CN107302029 A CN 107302029A
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 33
- 239000010703 silicon Substances 0.000 title claims abstract description 33
- 239000000758 substrate Substances 0.000 title claims abstract description 33
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 31
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 31
- 230000005611 electricity Effects 0.000 title claims abstract description 30
- 229910052751 metal Inorganic materials 0.000 claims abstract description 31
- 239000002184 metal Substances 0.000 claims abstract description 31
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 16
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 8
- 230000005678 Seebeck effect Effects 0.000 claims abstract description 6
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims description 18
- 230000004888 barrier function Effects 0.000 claims description 8
- 230000017525 heat dissipation Effects 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 239000003990 capacitor Substances 0.000 claims description 2
- 239000013078 crystal Substances 0.000 claims description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims 2
- 229920005591 polysilicon Polymers 0.000 abstract description 11
- 238000000034 method Methods 0.000 abstract description 8
- 239000000523 sample Substances 0.000 abstract description 6
- 229910052782 aluminium Inorganic materials 0.000 abstract description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 5
- 238000001514 detection method Methods 0.000 abstract description 4
- 238000001704 evaporation Methods 0.000 abstract description 4
- 230000008020 evaporation Effects 0.000 abstract description 4
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 4
- -1 boron ion Chemical class 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 239000000446 fuel Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
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- 230000003647 oxidation Effects 0.000 description 2
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- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000005619 thermoelectricity Effects 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
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- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical group 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 235000011007 phosphoric acid Nutrition 0.000 description 1
- 230000021715 photosynthesis, light harvesting Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000013519 translation Methods 0.000 description 1
- 239000002918 waste heat Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/38—Cooling arrangements using the Peltier effect
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Measuring Temperature Or Quantity Of Heat (AREA)
- Pressure Sensors (AREA)
Abstract
The silicon substrate for the internet of things oriented that the present invention is provided has the MOSFET element of heat to electricity conversion function, mainly include N-type MOSFET and thermocouple, MOSFET selects p-type Si as substrate, and the N-type MOSFET with heat to electricity conversion function is realized by COMS techniques and MEMS surface micromachineds.Layer of silicon dioxide is made in grid polycrystalline silicon surrounding and is chemically-mechanicapolish polished, and several thermocouples are made thereon.Thermocouple includes metal Al types thermoelectric arm and polysilicon N-type thermoelectric arm, and evaporation of aluminum connects two kinds of thermocouple arms, and the thermocouple probes for grid source and drain of connecting leave two electrodes as the output stage of Seebeck pressure difference, realize heat energy to the conversion of electric energy according to Seebeck effects.The heat energy that device work is produced can be converted to electric energy by the MOS device that the silicon substrate has heat to electricity conversion function, reduced temperature while realizing collection of energy, be conducive to radiating.The detection to heat-dissipating power size is realized by detecting the size of output Seebeck voltage.
Description
Technical field
The present invention, which proposes a kind of internet of things oriented silicon substrate, has the MOSFET of heat to electricity conversion function, belongs to microelectron-mechanical
The technical field of system (MEMS).MOSFET is Metal-Oxide Semiconductor field-effect transistor, (Metal-Oxide-
Semiconductor Field-Effect Transistor) abbreviation.
Background technology
With the feature size downsizing of integrated circuit, device density is rising, and the total power consumption of circuit is also gradually increasing, piece
Upper temperature more and more higher, chip heat flux is increased with the speed in year 6%.Too high temperature reduces the operating rate of device, leads
Local electrical resistance increase has been caused so as to increase unnecessary power consumption, and the Problem of Failure in integrated circuit has more than half to be asked with temperature
Topic is related, and including electromigration, hot carrier's effect etc., this has just had influence on its service life.Therefore, it is necessary in semiconductor
The relevant issues of the energy and heat dissipation problem are considered in the design of device.
With the development of Internet of Things, the power supply of portable set is that the shortcoming of lithium battery becomes apparent from, and lithium battery makes
Limited time, the life given people causes a little inconvenience.Therefore, in order to solve this problem, people begin one's study newly
Type power supply, including fuel cell, but its fuel treatment etc. is excessively complicated, and efficiency is only 2% or so.And thermo-electric generation is therewith
With comparativity, and thermo-electric generation system is relatively simple, as long as electricity generation module two ends have the temperature difference just to have continual electric power defeated
Go out.Wherein, how it is hot junction heat supply that the thermo-electric generation system subject matter to be solved if being.
The present invention is based on having for a kind of internet of things oriented of COMS techniques and MEMS surface micromachined technological designs
The MOSFET element of heat to electricity conversion function, on the one hand realizes the thermal source supply of thermo-electric generation, on the other hand by MOSFET element
Waste Heat Reuse, realize thermoelectric energy change, this be it is a kind of apply Internet of Things communication in MOSFET element.
The content of the invention
Goal of the invention：Silicon base CMOS technique and MEMS surface micromachineds are based on it is an object of the invention to provide one kind
Technique, the MOSFET element with heat to electricity conversion function of internet of things oriented；When MOSFET is in running order, device temperature
Distribution is different, according to Seebeck effects, designs a series of thermocouples, realizes that thermoelectric energy is changed.By detecting Seebeck pressure difference
Size detects the size of heat-dissipating power.
Technical scheme：In order to solve the above technical problems, the present invention is adopted the following technical scheme that：
A kind of silicon substrate of internet of things oriented has the MOSFET element of heat to electricity conversion function, and the MOSFET element is with p-type
Silicon is that on substrate, substrate is provided with source region, drain region, source metal lead wire, leakage metal lead wire, gate oxide；The top of gate oxide
There is one layer of grid polycrystalline silicon；The source metal lead wire, leakage metal lead wire, the surrounding of grid polycrystalline silicon are respectively equipped with insulating barrier；Institute
12 thermocouples are respectively equipped with above the insulating barrier for the grid source-drain area for stating MOSFET element；The thermocouple includes N-type thermoelectric arm
With Al type thermoelectric arms, with metal connecting line Al series connection between above-mentioned two thermoelectric arm, and 2 thermocouple probes are reserved respectively；With gold
Belong to line Al the thermocouple probes of the grid source-drain area of MOSFET element are connected, and leave two thermocouple probes as Seebeck
The output stage "+" pole and "-" pole of voltage.
Temperature Distribution when further, for MOS normal works is different, and thermoelectric energy is realized according to Seebeck effects
Conversion, carries out alleviating heat dissipation problem while heat recovery, and output Seebeck voltage can carry out storage electricity by bulky capacitor
Can, realize self-powered.
Further, by the size for the Seebeck pressure difference for detecting output, the size of heat-dissipating power can be detected.
Further, the Temperature Distribution produced under MOSFET normal works provides thermal source for thermocouple, and thermocouple realizes heat
Electric energy conversion, is conducive to radiating.
Further, the source metal lead wire, leakage metal lead wire, the left and right sides of grid polycrystalline silicon respectively put 4 thermocouples,
Upper and lower sides respectively put 2 thermocouples.
Further, the material of the insulating barrier is silica.
Beneficial effects of the present invention are：
1. the principle of the MOSFET element with heat to electricity conversion function of the internet of things oriented of the present invention, simple in construction, profit
It is easily achieved with existing silicon substrate COMS techniques and MEMS surface micromachineds；
2. the Temperature Distribution of the invention based on MOSFET, devises one group of thermocouple, according to Seebeck effects, by device
Heat energy be converted into electric energy, realize thermoelectric energy change.
3. the present invention is realized to heat-dissipating power size under MOSFET element normal work by detecting Seebeck voltage
Detection.When heat-dissipating power increases, the temperature of device rises, and temperature difference increase can cause the increase of Seebeck voltage.
4. the heat energy produced under proper device operation is converted into electric energy, is conducive to device by the present invention by Seebeck effects
The radiating of part.
Brief description of the drawings
Fig. 1 has the MOSFET of heat to electricity conversion function top view for the silicon substrate of internet of things oriented of the present invention；
Fig. 2 for internet of things oriented of the present invention silicon substrate have heat to electricity conversion function MOSFET P-P ' to profile；
Fig. 3 for internet of things oriented of the present invention silicon substrate have heat to electricity conversion function MOSFET Q-Q ' to profile；
Fig. 4 for internet of things oriented of the present invention silicon substrate have heat to electricity conversion function MOSFET R-R ' to profile；
Fig. 5 has what the thermocouple above the MOSFET of heat to electricity conversion function was put for the silicon substrate of internet of things oriented of the present invention
Top view (i.e. Fig. 1 thermocouple 11)；
Fig. 6 for internet of things oriented of the present invention silicon substrate have heat to electricity conversion function MOSFET S-S ' to profile.
Figure includes：P-type Si substrates 1, insulating barrier 2, source region 3, drain region 4, source metal lead wire 5 leaks metal lead wire 6, grid
Polysilicon 7, the metal Al types thermoelectric arm 8 of thermocouple, the polysilicon N-type thermoelectric arm 9 of thermocouple, metal connecting line 10, thermocouple 11,
Gate oxide 12.
Embodiment
The embodiment to the present invention is described further below in conjunction with the accompanying drawings.
Referring to Fig. 1-6, the present invention, which proposes a kind of silicon substrate of internet of things oriented, has the MOSFET devices of heat to electricity conversion function
Part.The MOS device mainly includes：N-type MOSFET and thermocouple.Wherein, as N-type MOSFET under certain grid voltage normal work
When, because the Temperature Distribution of channel region is different, so as to provide the temperature difference for thermocouple.Select p-type Si as substrate 1, pass through
COMS techniques and MEMS surface micromachineds realize the MOSFET with thermoelectric energy translation function.One is made on substrate
Thickness degree is 20nm buffer oxide layer, to prevent boron ion injection from causing damage, then with 1.5 × 1014cm-2Dosage enter
Row p-well boron ion is injected, and removes buffer oxide layer with BOE afterwards；One layer of 20nm oxidation is made for isolation (LOCOS) thermal oxide
Layer, then LPCVD makes one layer of 100nm silicon nitride, and active area photoetching uses dry etching silicon nitride, removes deoxidation with BOE afterwards
Change layer；LOCOS is prepared with dry/wet/xeothermic oxidizing process, thickness is 400nm, then removes 100nm silicon nitrides with H3PO4, uses BOE
Remove 20nm oxide layers；The gate oxide 12 that a layer thickness is 20nm is prepared, it is many for 300nm grid in deposit a layer thickness thereon
Crystal silicon 7, then carries out phosphorus diffusion, using dry etching gate polysilicon；Source and drain injects arsenic, and dosage is 5 × 1015cm-2, obtain source
Area 3 and drain region 4, then it is 800nm source metal lead wire 5 and leakage metal lead wire 6, tradition to sputter a layer thickness on source and drain respectively
MOS be made.
A layer insulating 2 is made on N-type MOSFET, to isolate MOS and thermocouple, it is to avoid short circuit, the present embodiment
The material of middle insulating barrier 2 is silica.Meanwhile, it is polished, to make thermocouple on silica.Before this according to Fig. 5
Shown pattern makes the metal Al types thermoelectric arm 8 and polysilicon N-type thermoelectric arm 9 of thermocouple, and then evaporation of aluminum connects two kinds of thermoelectricity
Even arm, series connection thermocouple is so as to obtain bigger pressure difference.Wherein, 6 electrodes in lower section are reserved as thermocouple probes, thermoelectricity of connecting
Even electrode, leaves each thermocouple probes of source and drain as the output stage of Seebeck pressure difference.The silicon substrate has heat to electricity conversion function
MOS device can by device work produce heat energy be converted to electric energy, temperature is reduced while realizing collection of energy, favorably
In radiating；The detection to heat-dissipating power size is realized by detecting the size of output Seebeck voltage.
The silicon substrate of the present invention has the MOSFET element preparation method of heat to electricity conversion function as follows：
1) silicon substrate P-type silicon substrate 1 is prepared, doping concentration is 1015cm-3；
2) buffer oxide layer is prepared for p-well ion implanting, thickness 20nm, 1000 DEG C of oxidizing temperature, the time is 30min；
3) p-well boron ion is injected, and dosage is 1.5 × 1014, buffer oxide layer then is removed with BOE, the time is 20s；
4) one layer of 20nm oxide layer is made for isolation (LOCOS) thermal oxide, then LPCVD makes one layer of 100nm silicon nitride；
5) active area photoetching, using dry etching silicon nitride, the time is 1.5min, and oxide layer is removed with BOE, and the time is
20s；
6) LOCOS is prepared with dry/wet/xeothermic oxidizing process, thickness is 400nm, and temperature is 1000 DEG C, time 2 h, then
Use H3PO4100nm silicon nitrides are removed, 20nm oxide layers are removed with BOE；
7) gate oxide 12 is prepared, thickness is 20nm, and temperature is 925 DEG C, and the time is 30min；
8) gate polysilicon 7 is deposited, thickness is 300nm, and temperature is 620 DEG C, and the time is 70min, then carries out phosphorus diffusion, temperature
Spend for 950 DEG C, the time is 30min；
9) photoetching gate polysilicon, using dry etching gate polysilicon, the time is 35s；
10) source and drain N+ ion implantings, dosage is 5 × 1015cm-2Obtain source region 3 and drain region 4；
11) low-temperature oxidation, etches contact zone opening, obtains silicon dioxide passivation layer；
12) one layer of 800nm metallic aluminium is sputtered as source metal lead wire 5, leaks metal lead wire 6；
13) oxide layer is chemically-mechanicapolish polished, in case making thermocouple；
14) photoresist is coated near grid, N-type thermoelectric arm window is made by lithography；
15) LPCVD grows one layer of N+ polysilicon, and its doping concentration and thickness are respectively 5 × 1016cm-3And 0.7um, formed
The polysilicon N-type thermoelectric arm 9 of thermocouple；
16) evaporation growth Al, anti-carves Al, etches metallic pattern, forms another metal Al types thermoelectric arm 8 of thermocouple；
17) photoresist is coated, retains specific pattern photoresist, uses H3PO4:CH3COOH:HNO3=100:10:1 anti-carves Al,
Temperature is 50 DEG C, and the time is 3min, and polysilicon N-type thermoelectric arm 9 is connected with metal Al types thermoelectric arm 8 with metal connecting line Al 10
Get up, form thermocouple；
18) photoresist is removed；
19) 2 extraction electrodes of grid region thermocouple are made；
20) repeat step 13 near source-drain electrode) -- 19), make thermocouple 11 as shown in Figure 5；
21) evaporation of aluminum line, according to each electrode is connected as shown in Figure 1, leaves two electrodes as the output of Seebeck pressure difference
Pole.
Distinguish whether be the structure standard it is as follows：
The silicon substrate of the internet of things oriented of the present invention has the MOSFET element of heat to electricity conversion function, the heat with 36 series connection
Galvanic couple.After traditional N-type MOSFET completes grid, growth layer of silicon dioxide layer, chemically mechanical polishing, smooth list
Thin silicon dioxide layer is used as the reference plane for making thermocouple.Grid source and drain has respectively made 12 by metal Al types thermoelectric arm and polycrystalline
The thermocouple of silicon N-type thermoelectric arm composition, is connected with metal connecting line aluminium, so that increase Seebeck pressure difference at double.The silicon substrate
The heat waste that device work is produced can be converted to electric energy by the MOS device with heat to electricity conversion function, realize the same of collection of energy
When reduce temperature, be conducive to radiating；Realized by detecting the size of output Seebeck voltage to heat-dissipating power size
Detection.
The structure for meeting conditions above is considered as the silicon substrate of the present invention and has the MOSFET element of heat to electricity conversion function.
Described above is only the preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
For member, under the premise without departing from the principles of the invention, some improvements and modifications can also be made, these improvements and modifications also should
It is considered as protection scope of the present invention.
Claims (6)
1. a kind of silicon substrate of internet of things oriented has the MOSFET element of heat to electricity conversion function, it is characterized in that：The MOSFET devices
Part using P-type silicon as substrate (1) on, substrate (1) provided with source region (3), drain region (4), source metal lead wire (5), leakage metal lead wire
(6), gate oxide (12)；There is one layer of grid polycrystalline silicon (7) above the gate oxide (12)；The source metal lead wire (5),
Leakage metal lead wire (6), the surrounding of grid polycrystalline silicon (7) are respectively equipped with insulating barrier (2)；The grid source-drain area of the MOSFET element
It is respectively equipped between several thermocouples, thermocouple and is connected by metal connecting line (10) above insulating barrier (2), and leaves two heat
Galvanic couple electrode as Seebeck voltage output stage "+" pole and "-" pole；The thermocouple is by metal Al types thermoelectric arm (8) and many
Crystal silicon N-type thermoelectric arm (9) is in series by metal connecting line (10).
2. the silicon substrate of internet of things oriented according to claim 1 has the MOSFET element of heat to electricity conversion function, its feature
It is：Temperature Distribution during for MOS normal works is different, realizes that thermoelectric energy is changed according to Seebeck effects, carries out heat and returns
Heat dissipation problem is alleviated while receipts, output Seebeck voltage can be carried out storage electric energy, realize self-powered by bulky capacitor.
3. the silicon substrate of internet of things oriented according to claim 1 has the MOSFET element of heat to electricity conversion function, its feature
It is：By detecting Seebeck pressure difference, the size of heat-dissipating power can be detected.
4. the silicon substrate of internet of things oriented according to claim 1 has the MOSFET element of heat to electricity conversion function, its feature
It is：The Temperature Distribution produced under MOSFET normal works provides thermal source for thermocouple, and thermocouple realizes that thermoelectric energy is changed, favorably
In radiating.
5. the GaAs base of internet of things oriented according to claim 1 has the MESFET devices of heat to electricity conversion function, its
It is characterized in：The source metal lead wire (5), leakage metal lead wire (6), the left and right sides of grid polycrystalline silicon (7) respectively put 4 thermocouples,
Upper and lower sides respectively put 2 thermocouples.
6. the GaAs base of internet of things oriented according to claim 1 has the MESFET devices of heat to electricity conversion function, its
It is characterized in：The material of the insulating barrier (2) is silica.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201710555931.1A CN107302029B (en) | 2017-07-10 | 2017-07-10 | Silicon-based MOSFET device with thermoelectric conversion function and oriented to Internet of things |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710555931.1A CN107302029B (en) | 2017-07-10 | 2017-07-10 | Silicon-based MOSFET device with thermoelectric conversion function and oriented to Internet of things |
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| Publication Number | Publication Date |
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| CN107302029A true CN107302029A (en) | 2017-10-27 |
| CN107302029B CN107302029B (en) | 2020-04-24 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113328707A (en) * | 2021-06-04 | 2021-08-31 | 东南大学 | Electrostatic and thermal energy harvesting and self-powering in radio frequency amplifiers |
| CN113336183A (en) * | 2021-06-04 | 2021-09-03 | 东南大学 | Electrostatic discharge protection and energy storage structure of microwave integrated circuit clamped beam |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1132939A (en) * | 1995-04-07 | 1996-10-09 | 三菱电机株式会社 | Bipolar transistor circuit element |
| DE19802402A1 (en) * | 1997-08-10 | 1999-02-18 | Shie Jin Shown | Solid state switch |
| CN101819993A (en) * | 2010-04-13 | 2010-09-01 | 东南大学 | P type lateral insulated gate bipolar device for reducing hot carrier effect |
-
2017
- 2017-07-10 CN CN201710555931.1A patent/CN107302029B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1132939A (en) * | 1995-04-07 | 1996-10-09 | 三菱电机株式会社 | Bipolar transistor circuit element |
| DE19802402A1 (en) * | 1997-08-10 | 1999-02-18 | Shie Jin Shown | Solid state switch |
| CN101819993A (en) * | 2010-04-13 | 2010-09-01 | 东南大学 | P type lateral insulated gate bipolar device for reducing hot carrier effect |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113328707A (en) * | 2021-06-04 | 2021-08-31 | 东南大学 | Electrostatic and thermal energy harvesting and self-powering in radio frequency amplifiers |
| CN113336183A (en) * | 2021-06-04 | 2021-09-03 | 东南大学 | Electrostatic discharge protection and energy storage structure of microwave integrated circuit clamped beam |
| CN113328707B (en) * | 2021-06-04 | 2023-09-12 | 东南大学 | Static electricity and heat energy collection and self-power supply in radio frequency amplifier |
| CN113336183B (en) * | 2021-06-04 | 2023-12-12 | 东南大学 | Static discharge protection and energy storage structure of clamped beam of microwave integrated circuit |
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| CN107302029B (en) | 2020-04-24 |
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