CN107299394A - The liquid phase epitaxy preparation method of easy magnetization monocrystalline garnet magneto-optic thin film outside submicron order face - Google Patents
The liquid phase epitaxy preparation method of easy magnetization monocrystalline garnet magneto-optic thin film outside submicron order face Download PDFInfo
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
- C30B29/28—Complex oxides with formula A3Me5O12 wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. garnets
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
- C30B19/04—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux the solvent being a component of the crystal composition
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Abstract
The liquid phase epitaxy preparation method of easy magnetization monocrystalline garnet magneto-optic thin film, comprises the following steps outside submicron order face：Prepare melt：With Ga2O3、Tm2O3、Fe2O3、Bi2O3Melt is prepared for raw material；Clean substrate；Substrate after cleaning is put into melt, at a temperature of 935 DEG C, substrate rotating speed be 120rpm, grow 1~5min, after the completion of growth, cleaning remove residual, obtain easy magnetization monocrystalline garnet magneto-optic thin film outside submicron order face of the present invention.The magneto-optic thin film that the present invention is prepared can be applied to spin logical device.The present invention has drawn suitable oxide proportioning, and combines the characteristics of oxide is matched, the submicron order monocrystalline Bi prepared using the high-revolving method of Seedling height temperature:TmIG films, its film thickness is 100~1000nm, with the easy magnetizing axis perpendicular to film surface (outside face).
Description
Technical field
The present invention relates to technical field of electronic materials, and in particular to easy magnetization monocrystalline garnet magnetic outside a kind of submicron order face
The liquid phase epitaxy preparation method of optical thin film.
Background technology
Since the sixties in last century five, the fast development of microwave communication techniques has driven the demand to basic material,
MAGNETIC GARNET FILMS GROWN is set to also become a big study hotspot.Afterwards with the development of Fibre Optical Communication Technology, make magneto optic garnets
Monocrystal thin films are aroused great concern.Found that YIG materials can be as the perfact conductor for conducting spin wave, section from 2010
Educational circles is absorbed in the exploration that YIG materials are applied in spin field always.American scholar C.O.Avci et.al exist within 2016《From
So》Upper report TmIG magneto-optic memory techniques equally can make magneto-optic memory technique answering in spin field as the perfact conductor for conducting spin wave
Turn into new focus with research.Research is found, although TmIG magneto-optic thin films are a kind of current insulator in itself, and spin current still can be
Wherein transmit, spinning electron enters in magnetic insulator, and a microcosmic torque (spin transfer torque) can be produced to magnetic moment, profit
The upset to magnetic moment can be realized with this spin transfer torque.This case utilizes the submicrometer-thick Bi of liquid phase epitaxy:TmIG
Easy magnetization characteristic outside the face of film, it is possible to achieve the Magnetic moment reversal of relatively low spin current size induction, for exploitation room temperature low-power consumption certainly
Rotation electronic device has established important material foundation.But magnetize outside thicker face in TmIG garnets, realize spin current
There is very big difficulty in Magnetic moment reversal, cause it can not be applied to spin logical device.Therefore, magnetize outside the face of self-spining device application
TmIG films, thickness needs to control in submicron order even nanoscale.In addition, although TmIG films are easy magnetization materials outside face
Material, but saturation magnetic field is larger, and how to reduce saturation field is also one of difficult point.
Liquid phase epitaxy technology be in the most important a kind of technology of Grown monocrystal thin films or thick film, can be by suitable
When the proportioning of oxide in control melt, the performance of thin-film material is adjusted.It is usually in gadolinium gallium by taking monocrystalline garnet as an example
Garnet (GGG) Grown microwave monocrystalline or magneto optical single crystal.
At present, the thickness of magneto optical single crystal film prepared by liquid phase epitaxy is micron order mostly, and submicron order is not prepared also
The effective ways of magneto optical single crystal film.Main reason is that：1st, suitable oxide proportioning is not found at present；2nd, make at present
The conventional thinking of the magneto-optic thin film of standby thinner thickness is low growth rate (extremely low degree of supercooling), short growth time, yet with mistake
The driving force of the cold extremely low generation of degree is smaller, and substrate surface is difficult Quick uniform nucleation and crystallization, and this to prepare submicron order
The monocrystalline garnet magneto-optic thin film of thickness turns into a technical barrier.
The content of the invention
For defect of the prior art, the present invention provides easy magnetization monocrystalline garnet magneto-optic thin film outside submicron order face
Liquid phase epitaxy preparation method, to obtain thickness as 100nm~1000nm, the compact structure of film, the monocrystalline stone stone of surfacing
Garnet magneto-optic thin film.
The liquid phase epitaxy preparation method of easy magnetization monocrystalline garnet magneto-optic thin film, comprises the following steps outside submicron order face：
S1, prepare melt：With Ga2O3、Tm2O3、Fe2O3、Bi2O3For raw material, Bi2O3Not only provide composition for film but also be molten
Agent, Ga2O3To reduce saturation field；
According to formula:(BixTm3-x)(GayFe5-y)O12, 0<x<3,0<y<5, using R factor methods of completing the square (Blank-
Nielsen Y-factor method Ys) carry out dispensing and obtain melt, the R factors being related to have R1, R2, R3, the relations of three factors it is following (mole
Than)：
Wherein, Garnetoxides refers to the component oxide for constituting garnet, and Garnetoxides+Flux refers to
Constitute the component oxide and Bi of garnet2O3The total amount of flux.
S2, cleaning substrate；
S3, step S2 is cleaned after substrate be put into melt, at a temperature of 935 DEG C, substrate rotating speed be 120rpm, it is raw
Long 1~5min, cleaning removes residual after the completion of growth, obtains easy magnetization monocrystalline garnet magnetic outside submicron order face of the present invention
Optical thin film.
In the present invention, as a kind of perferred technical scheme, step S1 detailed process is：Precise raw material Ga2O3、
Tm2O3、Fe2O3、Bi2O3, it is placed in platinum crucible after ground and mixed, 20~24h is melted at 1050~1080 DEG C, then 980
10~12h is stirred at~1000 DEG C, improving uniformity of melt is obtained.
In the present invention, as a kind of perferred technical scheme, the substrate that step S2 is used is Gd-Ga garnet (GGG) base
Piece.
In the present invention, as a kind of perferred technical scheme, the detailed process of cleaning substrate is：GGG substrates are existed successively
Ultrasound is respectively washed twice in deionized water, acetone, alcohol；Then it is 1 in volume ratio:1 concentrated sulfuric acid and the mixed liquor of nitric acid
In boil 10~30min；Finally use deionized water rinsing substrate 3~5 times, dry for standby.
In the present invention, as a kind of perferred technical scheme, in step S3, the detailed process that cleaning removes residual is：It is raw
After the completion of length, by the quick lift-off of substrate to away from being rotated at a high speed at 20~30mm of melt liquid level and with 180~200 rpm speed,
To get rid of the remaining melt on substrate, substrate is then slowly withdrawn from epitaxial furnace to avoid because film is opened caused by thermal expansion
Split；Finally obtained membrane substrate is cleaned to remove the fluxing agent of residual in hot nitric acid.
Easy magnetization monocrystalline garnet magneto-optic thin film is in spin logical device energy outside the submicron order face that the present invention is prepared
Enough applied, it can be used as the part component of spin logic device, and therefore not to repeat here.
Due to using above technical scheme, the present invention has the advantages that：
Inventor has drawn suitable oxide proportioning, and combine the spy that oxide is matched by experiment largely repeatedly
Point, the submicron order monocrystalline Bi prepared using the high-revolving method of Seedling height temperature:TmIG films, are monocrystalline state, and its is thin
Film thickness is 100~1000nm, with the easy magnetizing axis perpendicular to film surface (outside face)；And compact structure, the surface of film
It is smooth, it is a kind of good material that can be applied to spin logical device.
When the conventional thinking for the magneto-optic thin film for preparing thinner thickness at present is low growth rate (extremely low degree of supercooling), short growth
Between.Smaller yet with the driving force of the extremely low generation of degree of supercooling, substrate surface is difficult Quick uniform nucleation and crystallization, and this hair
It is bright by increase film grow when substrate rotating speed, while using suitable oxide match, make substrate at a high speed rotation produce
Interface driving force increase, further promotes substrate surface nucleation and crystallization, while effectively extending growth time, surface nucleation is had foot
Enough time homogenization, finally give uniform submicron order monocrystalline Bi:TmIG magneto-optic thin films.
Brief description of the drawings
, below will be to specific in order to illustrate more clearly of the specific embodiment of the invention or technical scheme of the prior art
The accompanying drawing used required in embodiment or description of the prior art is briefly described.In all of the figs, similar element
Or part is general by similar reference mark.In accompanying drawing, each element or part might not be drawn according to actual ratio.
Fig. 1 is the structural representation for the liquid phase epitaxy stove that liquid phase epitaxial method of the present invention is used；
Fig. 2 is the graph of a relation of rheotaxial growth temperature of the present invention and growth rate (growth rotating speed is 60rpm)；
Fig. 3 is the Bi that the embodiment of the present invention is prepared:The AFM figures of TmIG films；
Fig. 4 is the Bi that the embodiment of the present invention is prepared:The VSM test curves of TmIG films.
Embodiment
Technical solution of the present invention is described in detail below in conjunction with specific embodiment.Following examples are only used for more
Plus technical scheme is clearly demonstrated, therefore example is only used as, and can not be limited the scope of the invention with this.
Embodiment 1
The liquid phase epitaxy preparation method of easy magnetization monocrystalline garnet magneto-optic thin film, comprises the following steps outside submicron order face：
S1, prepare melt：With Ga2O3、Tm2O3、Fe2O3、Bi2O3For raw material, Bi2O3Not only provide composition for film but also be molten
Agent, Ga2O3To reduce saturation field；
According to formula:(BixTm3-x)(GayFe5-y)O12, 0<x<3,0<y<5, dispensing is carried out using R factors method of completing the square and obtained
Melt, the R factors being related to have R1, R2, R3, and the relation of three factors is following (mol ratio)：
In the present embodiment, Ga2O3、Tm2O3、Fe2O3、Bi2O3Mass ratio be 1:2.08:8.027:130.9, ground and mixed
After be placed in platinum crucible, at 1050 DEG C melt 20~24h, then stir 10h at 980 DEG C, obtain improving uniformity of melt；
S2, the substrate used clean substrate for Gd-Ga garnet (GGG) substrate：By GGG substrates successively deionized water,
Ultrasound is respectively washed twice in acetone, alcohol；Then it is 1 in volume ratio:Boiled in 1 concentrated sulfuric acid and the mixed liquor of nitric acid
10min；Finally use deionized water rinsing substrate 3 times, dry for standby；
S3, step 2 is cleaned after substrate be put into melt, at a temperature of 935 DEG C, substrate rotating speed be 120rpm, growth
1min, after the completion of growth, by the quick lift-off of substrate to away from being rotated at a high speed at melt liquid level 20mm and with 180rpm speed, to get rid of
Fall the remaining melt on substrate, substrate is then slowly withdrawn from epitaxial furnace to avoid due to film peeling caused by thermal expansion；
Finally obtained membrane substrate is cleaned to remove the fluxing agent of residual in hot nitric acid, obtain sub-micron of the present invention
Easy magnetization monocrystalline garnet magneto-optic thin film outside level face.
Embodiment 2
The liquid phase epitaxy preparation method of easy magnetization monocrystalline garnet magneto-optic thin film, comprises the following steps outside submicron order face：
S1, prepare melt：With Ga2O3、Tm2O3、Fe2O3、Bi2O3For raw material, Bi2O3Not only provide composition for film but also be molten
Agent, Ga2O3To reduce saturation field；
According to formula:(BixTm3-x)(GayFe5-y)O12, 0<x<3,0<y<5, dispensing is carried out using R factors method of completing the square and obtained
Melt, the R factors being related to have R1, R2, R3, and the relation of three factors is following (mol ratio)：
In the present embodiment, Ga2O3、Tm2O3、Fe2O3、Bi2O3Mass ratio be 1:2.08:8.027:130.9, ground and mixed
After be placed in platinum crucible, 24h is melted at 1080 DEG C, then 12h is stirred at 1000 DEG C, obtains improving uniformity of melt；
S2, the substrate used clean substrate for Gd-Ga garnet (GGG) substrate：By GGG substrates successively deionized water,
Ultrasound is respectively washed twice in acetone, alcohol；Then it is 1 in volume ratio:Boiled in 1 concentrated sulfuric acid and the mixed liquor of nitric acid
30min；Finally use deionized water rinsing substrate 5 times, dry for standby；
S3, step S2 is cleaned after substrate be fixed on platinum support, keep substrate and melt liquid level to have one small
Substrate slow (being put into the time control of completion in 2min) is put into melt by 10 ° of angle；Growth temperature is 935 DEG C, and substrate turns
Speed is 120rpm, and growth time is 5min, and substrate changes a direction of rotation every 5s, after the completion of growth, by substrate quick (3
In second) lift-off is at away from melt liquid level 30mm, and the substrate that upper step is obtained is rotated at a high speed with 200rpm speed to be got rid of on substrate
Remaining melt, then slow from epitaxial furnace (deadline was controlled at 5 minutes) lifts substrate to avoid because thermal expansion is drawn
The film peeling risen；Finally the obtained substrate with monocrystal thin films is cleaned to remove residual in the hot nitric acid close to boiling
Fluxing agent, obtains easy magnetization monocrystalline Bi outside submicron order face of the present invention:TmIG magneto-optic thin films.
Embodiment 3
The liquid phase epitaxy preparation method of easy magnetization monocrystalline garnet magneto-optic thin film, comprises the following steps outside submicron order face：
S1, prepare melt：With Ga2O3、Tm2O3、Fe2O3、Bi2O3For raw material, Bi2O3Not only provide composition for film but also be molten
Agent, Ga2O3To reduce saturation field；
According to formula:(BixTm3-x)(GayFe5-y)O12, 0<x<3,0<y<5, dispensing is carried out using R factors method of completing the square and obtained
Melt, the R factors being related to have R1, R2, R3, and the relation of three factors is following (mol ratio)：
In the present embodiment, Ga2O3、Tm2O3、Fe2O3、Bi2O3Mass ratio be 1:2.08:8.027:130.9, ground and mixed
After be placed in platinum crucible, at 1050~1080 DEG C melt 20~24h, then at 980~1000 DEG C stir 10~12h, obtain
To improving uniformity of melt；
S2, the substrate used is Gd-Ga garnet (GGG) substrates, by GGG substrates successively in deionized water, acetone, alcohol
Middle ultrasonic cleaning is twice；Then it is 1 in volume ratio:15min is boiled in 1 concentrated sulfuric acid and the mixed liquor of nitric acid；Finally use and go
Ionized water rinse substrate 5 times, dry for standby；
S3, the growth temperature of liquid phase epitaxial method growth monocrystalline garnet are a temperature range, different growth temperature
The different growth rate of degree point correspondence, the higher growth rate of relatively low growth temperature correspondence, higher growth temperature correspondence compared with
Low speed, the present invention selects minimum growth rate to grow monocrystal thin films, therefore, and the growth temperature that the present invention chooses is can
The maximum temperature point for maintaining film continuously to grow.As shown in Fig. 2 the temperature range that the achievable film of the present invention continuously grows is
920~935 DEG C, the present embodiment growth selection monocrystalline Bi:The growth temperature of TmIG magneto-optic garnet films is chosen for maximum temperature
935 DEG C are put, concrete operation method is：Substrate after step S2 is cleaned is fixed on platinum support, keeps substrate and melt liquid
Face has 10 ° small of an angle that substrate slow (being put into the time control of completion in 2min) is put into melt；Growth temperature is
935 DEG C, substrate rotating speed is 120rpm, and growth time is 2min, and substrate changes a direction of rotation every 5s, after the completion of growth,
By quick (in the 3 seconds) lift-off of substrate at away from melt liquid level 20mm, the substrate that upper step is obtained is revolved at a high speed with 200rpm speed
Turn to get rid of the remaining melt on substrate, then slow from epitaxial furnace (deadline was controlled at 5 minutes) lifts substrate to avoid
Due to film peeling caused by thermal expansion；Finally the obtained substrate with monocrystal thin films is cleaned in the hot nitric acid close to boiling
To remove the fluxing agent of residual, easy magnetization monocrystalline Bi outside submicron order face of the present invention is obtained:TmIG magneto-optic thin films.
Embodiment 4
The liquid phase epitaxy preparation method of easy magnetization monocrystalline garnet magneto-optic thin film, comprises the following steps outside submicron order face：
S1, prepare melt：With Ga2O3、Tm2O3、Fe2O3、Bi2O3For raw material, Bi2O3Not only provide composition for film but also be molten
Agent, Ga2O3To reduce saturation field；
According to formula:(BixTm3-x)(GayFe5-y)O12, 0<x<3,0<y<5, dispensing is carried out using R factors method of completing the square and obtained
Melt, the R factors being related to have R1, R2, R3, and the relation of three factors is following (mol ratio)：
In the present embodiment, Ga2O3、Tm2O3、Fe2O3、Bi2O3Mass ratio be 1:2.08:8.027:130.9, ground and mixed
After be placed in platinum crucible, 22h is melted at 1060 DEG C, then 11h is stirred at 990 DEG C, obtains improving uniformity of melt；
S2, the substrate used clean substrate for Gd-Ga garnet (GGG) substrate：By GGG substrates successively deionized water,
Ultrasound is respectively washed twice in acetone, alcohol；Then it is 1 in volume ratio:Boiled in 1 concentrated sulfuric acid and the mixed liquor of nitric acid
20min；Finally use deionized water rinsing substrate 4 times, dry for standby；
S3, step S2 is cleaned after substrate be fixed on platinum support, keep substrate and melt liquid level to have one small
Substrate slow (being put into the time control of completion in 2min) is put into melt by 10 ° of angle；Growth temperature is 935 DEG C, and substrate turns
Speed is 120rpm, and growth time is 2min, and substrate changes a direction of rotation every 5s, after the completion of growth, by substrate quick (3
In second) lift-off is at away from melt liquid level 25mm, and the substrate that upper step is obtained is rotated at a high speed with 190rpm speed to be got rid of on substrate
Remaining melt, then slow from epitaxial furnace (deadline was controlled at 5 minutes) lifts substrate to avoid because thermal expansion is drawn
The film peeling risen；Finally the obtained substrate with monocrystal thin films is cleaned to remove residual in the hot nitric acid close to boiling
Fluxing agent, obtains easy magnetization monocrystalline Bi outside submicron order face of the present invention:TmIG magneto-optic thin films.
Embodiment 5
The liquid phase epitaxy preparation method of easy magnetization monocrystalline garnet magneto-optic thin film, comprises the following steps outside submicron order face：
S1, prepare melt：With Ga2O3、Tm2O3、Fe2O3、Bi2O3For raw material, Bi2O3Not only provide composition for film but also be molten
Agent, Ga2O3To reduce saturation field；
According to formula:(BixTm3-x)(GayFe5-y)O12, 0<x<3,0<y<5, dispensing is carried out using R factors method of completing the square and obtained
Melt, the R factors being related to have R1, R2, R3, and the relation of three factors is following (mol ratio)：
In the present embodiment, Ga2O3、Tm2O3、Fe2O3、Bi2O3Mass ratio be 1:2.08:8.027:130.9, ground and mixed
After be placed in platinum crucible, 24h is melted at 1055 DEG C, then 12h is stirred at 985 DEG C, obtains improving uniformity of melt；
S2, the substrate used clean substrate for Gd-Ga garnet (GGG) substrate：By GGG substrates successively deionized water,
Ultrasound is respectively washed twice in acetone, alcohol；Then it is 1 in volume ratio:Boiled in 1 concentrated sulfuric acid and the mixed liquor of nitric acid
25min；Finally use deionized water rinsing substrate 5 times, dry for standby；
S3, step S2 is cleaned after substrate be fixed on platinum support, keep substrate and melt liquid level to have one small
Substrate slow (being put into the time control of completion in 2min) is put into melt by 10 ° of angle；Growth temperature is 935 DEG C, and substrate turns
Speed is 120rpm, and growth time is 3min, and substrate changes a direction of rotation every 5s, after the completion of growth, by substrate quick (3
In second) lift-off is at away from melt liquid level 20mm, and the substrate that upper step is obtained is rotated at a high speed with 200rpm speed to be got rid of on substrate
Remaining melt, then slow from epitaxial furnace (deadline was controlled at 5 minutes) lifts substrate to avoid because thermal expansion is drawn
The film peeling risen；Finally the obtained substrate with monocrystal thin films is cleaned to remove residual in the hot nitric acid close to boiling
Fluxing agent, obtains easy magnetization monocrystalline Bi outside submicron order face of the present invention:TmIG magneto-optic thin films.
Above example liquid phase epitaxy preparation method is carried out using the liquid phase epitaxy stove such as Fig. 1 structures, and melt 5 is placed in
In crucible 4, and heated using heater 3, clamp GGG substrates 2 using ceramic lifting rod 6 and put it into melt 5,
Open motor 1 simultaneously, drive GGG substrates 2 to rotate by rotary shaft 7, after the completion of utilize the ceramic lifting of lifting rod 6 GGG substrates
2。
Select the monocrystalline Bi that embodiment 3 is prepared:TmIG magneto-optic thin films are detected.
Fig. 3 is the monocrystalline Bi that the embodiment of the present invention 3 is obtained:The AFM figures of TmIG magneto-optic thin films, from Fig. 3, the present invention
The compact structure of obtained film, surfacing, the smaller RMS=0.42nm of roughness.Fig. 4 is what the embodiment of the present invention 3 was obtained
Bi:The VSM test curves of TmIG monocrystal thin films, as shown in Figure 4, the Bi that the present invention is obtained:The easy magnetizing axis of TmIG monocrystal thin films
Outside face, magnetized saturation field is less than 40Oe outside face.
Finally it should be noted that：Various embodiments above is merely illustrative of the technical solution of the present invention, rather than its limitations；To the greatest extent
The present invention is described in detail with reference to foregoing embodiments for pipe, it will be understood by those within the art that：Its according to
The technical scheme described in foregoing embodiments can so be modified, or which part or all technical characteristic are entered
Row equivalent substitution；And these modifications or replacement, the essence of appropriate technical solution is departed from various embodiments of the present invention technology
The scope of scheme, it all should cover among the claim of the present invention and the scope of specification.
Claims (5)
1. the liquid phase epitaxy preparation method of easy magnetization monocrystalline garnet magneto-optic thin film outside submicron order face, it is characterised in that including
Following steps：
S1, prepare melt：With Ga2O3、Tm2O3、Fe2O3、Bi2O3For raw material, Bi2O3Not only provide composition for film but also be flux,
Ga2O3To reduce saturation field；
According to formula:(BixTm3-x)(GayFe5-y)O12, 0<x<3,0<y<5, using R factors method of completing the square (Blank-Nielsen systems
Number methods) carry out dispensing and obtain melt, the R factors being related to have R1, R2, R3, and the relation of three factors is following (mol ratio)：
<mrow>
<mi>R</mi>
<mn>1</mn>
<mo>=</mo>
<mfrac>
<mrow>
<msub>
<mi>Tm</mi>
<mn>2</mn>
</msub>
<msub>
<mi>O</mi>
<mn>3</mn>
</msub>
</mrow>
<mrow>
<msub>
<mi>Fe</mi>
<mn>2</mn>
</msub>
<msub>
<mi>O</mi>
<mn>3</mn>
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<mo>=</mo>
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</msub>
</mrow>
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<mn>3</mn>
</msub>
</mrow>
</mfrac>
<mo>=</mo>
<mn>0.1</mn>
<mo>~</mo>
<mn>0.135</mn>
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<mn>3</mn>
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<mi>G</mi>
<mi>a</mi>
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S2, cleaning substrate；
S3, by step S2 clean after substrate be put into melt, at a temperature of 935 DEG C, substrate rotating speed be 120rpm, growth 1~
5min, after the completion of growth, cleaning removes residual, obtains easy magnetization monocrystalline garnet magneto-optic outside submicron order face of the present invention thin
Film.
2. the liquid phase epitaxy preparation side of easy magnetization monocrystalline garnet magneto-optic thin film outside submicron order face according to claim 1
Method, it is characterised in that step S1 detailed process is：Precise raw material Ga2O3、Tm2O3、Fe2O3、Bi2O3, after ground and mixed
It is placed in platinum crucible, 20~24h is melted at 1050~1080 DEG C, 10~12h is then stirred at 980~1000 DEG C, is obtained
Improving uniformity of melt.
3. the liquid phase epitaxy preparation side of easy magnetization monocrystalline garnet magneto-optic thin film outside submicron order face according to claim 1
Method, it is characterised in that the substrate that step S2 is used is Gd-Ga garnet (GGG) substrate.
4. the liquid phase epitaxy preparation side of easy magnetization monocrystalline garnet magneto-optic thin film outside submicron order face according to claim 3
Method, it is characterised in that cleaning substrate detailed process be：By the GGG substrates successively ultrasound point in deionized water, acetone, alcohol
Do not clean twice；Then it is 1 in volume ratio:10~30min is boiled in 1 concentrated sulfuric acid and the mixed liquor of nitric acid；Finally use and go
Ionized water rinse substrate 3~5 times, dry for standby.
5. the liquid phase epitaxy preparation side of easy magnetization monocrystalline garnet magneto-optic thin film outside submicron order face according to claim 1
Method, it is characterised in that in step S3, cleaning removes the detailed process remained and is：After the completion of growth, by the quick lift-off of substrate to away from
Rotated at a high speed at 20~30mm of melt liquid level and with 180~200rpm speed, to get rid of the remaining melt on substrate, Ran Houcong
Substrate is slowly withdrawn in epitaxial furnace to avoid due to film peeling caused by thermal expansion；Finally obtained membrane substrate is existed
Clean to remove the fluxing agent of residual in hot nitric acid.
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