CN107275482B - A kind of manufacturing method and resistance-variable storing device of resistance-variable storing device - Google Patents
A kind of manufacturing method and resistance-variable storing device of resistance-variable storing device Download PDFInfo
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- CN107275482B CN107275482B CN201710552498.6A CN201710552498A CN107275482B CN 107275482 B CN107275482 B CN 107275482B CN 201710552498 A CN201710552498 A CN 201710552498A CN 107275482 B CN107275482 B CN 107275482B
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 81
- 229910052751 metal Inorganic materials 0.000 claims abstract description 29
- 239000002184 metal Substances 0.000 claims abstract description 29
- 238000000034 method Methods 0.000 claims abstract description 27
- 239000000463 material Substances 0.000 claims abstract description 24
- 238000005530 etching Methods 0.000 claims abstract description 21
- 239000004593 Epoxy Substances 0.000 claims abstract description 19
- 238000000151 deposition Methods 0.000 claims abstract description 17
- 230000003247 decreasing effect Effects 0.000 claims abstract description 6
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- 229910052804 chromium Inorganic materials 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
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- 229910052697 platinum Inorganic materials 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- 239000011241 protective layer Substances 0.000 claims description 4
- 230000000694 effects Effects 0.000 abstract description 5
- 239000010408 film Substances 0.000 description 95
- 238000005516 engineering process Methods 0.000 description 11
- 230000002829 reductive effect Effects 0.000 description 9
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- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000001659 ion-beam spectroscopy Methods 0.000 description 3
- 238000001755 magnetron sputter deposition Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
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- 238000003860 storage Methods 0.000 description 2
- 229910002370 SrTiO3 Inorganic materials 0.000 description 1
- 229910003070 TaOx Inorganic materials 0.000 description 1
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 1
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- 238000010438 heat treatment Methods 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N nickel(II) oxide Inorganic materials [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
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- 229920002120 photoresistant polymer Polymers 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
- H10N70/245—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies the species being metal cations, e.g. programmable metallization cells
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/841—Electrodes
- H10N70/8418—Electrodes adapted for focusing electric field or current, e.g. tip-shaped
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Abstract
The invention discloses a kind of manufacturing method of resistance-variable storing device and resistance-variable storing devices, comprising: provides the first substrate, and etches hole, along the direction of the surface of the first substrate etching hole inside, the decreasing dimensions of hole；The first metallic film is deposited, the first metallic film is active metal film；The second substrate of epoxy layer and setting is grown on first metallic film；Separate first substrate and first metallic film, wherein cone structure corresponding with described hole is formed on first metallic film；It is sequentially depositing oxide resistive layer material and the second metallic film on first metallic film, using first metallic film as the lower electrode of the memory, using second metallic film as the top electrode of the memory.Method provided by the invention, to solve the high technical problem of power consumption existing for resistance-variable storing device in the prior art.Realize the technical effect for reducing resistance-variable storing device operating voltage and power consumption.
Description
Technical field
The present invention relates to memory technology field more particularly to the manufacturing methods and resistance-change memory of a kind of resistance-variable storing device
Device.
Background technique
With the sustainable development of large scale integrated circuit technology, limited by its own Ultrahigh so that traditional flash
Memory technology is difficult to meet the development of Moore's Law, pursues single-chip integration density, the pressure of cost and technology is caused to Flash
Power.In order to reduce production cost, while avoiding the physics limit of technology node to the influence of storage market, seek high integration,
The storage that higher speed is read, and then the memory of Flash is replaced to become the hot spot that people study.
In recent years, the novel non-volatility memorizer based on new Ultrahigh and technology also continuously emerges.Resistive is deposited
Reservoir (RRAM) has structure simple as one of next-generation nonvolatile memory strong candidate, and scaling performance is good, stores close
The advantages that degree is high, compatible with CMOS technology
But there is also some critical problems not to solve for resistance-variable storing device at present, wherein power consumption higher position is that it is needed
One of technical problems to be solved.
Summary of the invention
The embodiment of the present application solves existing skill by providing the manufacturing method and resistance-variable storing device of a kind of resistance-variable storing device
The high technical problem of power consumption existing for resistance-variable storing device in art.
In order to solve the above technical problems, the embodiment provides following technical solutions:
On the one hand, a kind of manufacturing method of resistance-variable storing device is provided, comprising:
First substrate is provided, and etches hole on first substrate, along the first substrate etching hole
The direction of surface inside, the decreasing dimensions of described hole；
The first metallic film is deposited on said surface, and first metallic film is active metal film；
The second substrate of epoxy layer and setting is grown on first metallic film；
Separate first substrate and first metallic film, wherein be formed on first metallic film and institute
State the corresponding cone structure of hole；
It is sequentially depositing oxide resistive layer material and the second metallic film on first metallic film, with described first
Lower electrode of the metallic film as the memory, using second metallic film as the top electrode of the memory.
Optionally, described hole is inverted pyramid；The cone structure is pyramid structure, the pyramid
The top radius of shape structure is 20-30nm.
Optionally, described to etch hole on first substrate, comprising: the deposition of nitride on first substrate
Film；By nitride film described in poroid pattern etching；Make protective layer with the nitride film and etches first substrate, shape
At described hole；Remove the nitride film.
Optionally, described to etch hole on first substrate, comprising: anisotropic etching method to be used, in institute
It states and etches hole on the first substrate.
Optionally, the material of first metallic film is following any one or more combination: Ag, Cu, Ni；Described
The material of two metallic films is following any one or more combination: Ti, Cr, Pt.
Optionally, described that the second substrate of epoxy layer and setting is grown on first metallic film, comprising: described the
Epoxy layer is grown on one metallic film；It is heat-treated；Second substrate, second substrate are placed on the epoxy layer
For glass substrate.
On the other hand, a kind of resistance-variable storing device is provided, comprising:
Second substrate is provided with cone structure on the first surface of second substrate；
On the first surface, along the direction far from the first surface, it is disposed with epoxy layer, the first metal foil
Film, oxide resistive layer material and the second metallic film；First metallic film is active metal film；
Wherein, using first metallic film as the lower electrode of the memory, using second metallic film as
The top electrode of the memory.
Optionally, the cone structure is pyramid structure；The top radius of the pyramid structure is 20-
30nm。
Optionally, the material of first metallic film is following any one or more combination: Ag, Cu, Ni；Described
The material of two metallic films is following any one or more combination: Ti, Cr, Pt.
Optionally, second substrate is glass substrate.
One or more technical solutions provided in the embodiments of the present application have at least the following technical effects or advantages:
The manufacturing method and resistance-variable storing device of resistance-variable storing device provided by the embodiments of the present application, by carving on the first substrate
Borrosion hole hole forms cone structure in the first metal film surfaces, then separates the first substrate and the first metallic film, and first
Deposition oxide resistive layer material and the second metallic film on metallic film, form cone structure top electrode and lower electrode,
Due to electric field local enhancement at cone cell electrode, so that the energy barrier at cone structure is low compared with other positions, lower electrode metal pair
The constraint of electronics reduces, so that active metal is easier to be ionized at cone structure and is easier to migrate under the electric field, thus
The operation voltage of resistance-variable storing device is significantly reduced, to reduce power consumption.
Further, the application device architecture is simple, and technique and operating method are simple, at low cost, high reliablity and with tradition
CMOS technology is compatible, is conducive to be widely popularized and apply.
Detailed description of the invention
To describe the technical solutions in the embodiments of the present invention more clearly, make required in being described below to embodiment
Attached drawing is briefly described, it should be apparent that, the accompanying drawings in the following description is only the embodiment of the present invention, for ability
For the those of ordinary skill of domain, without creative efforts, it can also be obtained according to the attached drawing of offer other
Attached drawing.
Fig. 1 is the flow chart of the manufacturing method of resistance-variable storing device in the embodiment of the present application；
Fig. 2 is the technique the schematic diagram of the section structure of the manufacturing method of resistance-variable storing device in the embodiment of the present application；
Fig. 3 is the schematic diagram of the section structure of resistance-variable storing device in the embodiment of the present application；
Fig. 4 is resistance-variable storing device contrasting detection result schematic diagram in the embodiment of the present application.
Specific embodiment
The embodiment of the present application solves existing skill by providing the manufacturing method and resistance-variable storing device of a kind of resistance-variable storing device
The high technical problem of power consumption existing for resistance-variable storing device in art.Realize the technology for reducing resistance-variable storing device operating voltage and power consumption
Effect.
In order to solve the above technical problems, the general thought that the embodiment of the present application provides technical solution is as follows:
A kind of manufacturing method of resistance-variable storing device, comprising:
First substrate is provided, and etches hole on first substrate, along the first substrate etching hole
The direction of surface inside, the decreasing dimensions of described hole；
The first metallic film is deposited on said surface, and first metallic film is active metal film；
The second substrate of epoxy layer and setting is grown on first metallic film；
Separate first substrate and first metallic film, wherein be formed on first metallic film and institute
State the corresponding cone structure of hole；
It is sequentially depositing oxide resistive layer material and the second metallic film on first metallic film, with described first
Lower electrode of the metallic film as the memory, using second metallic film as the top electrode of the memory.
The manufacturing method and resistance-variable storing device of resistance-variable storing device provided by the embodiments of the present application, by carving on the first substrate
Borrosion hole hole forms cone structure in the first metal film surfaces, then separates the first substrate and the first metallic film, and first
Deposition oxide resistive layer material and the second metallic film on metallic film, form cone structure top electrode and lower electrode,
Due to when lower electrode adds positive pressure, electric field local enhancement at cone cell electrode, so that the energy barrier at cone structure is compared with other positions
It sets low, lower electrode metal reduces the constraint of electronics, so that active metal is easier to be ionized and in electric field at cone structure
Under be easier to migrate, so that the operation voltage of resistance-variable storing device is significantly reduced, to reduce power consumption.
In order to better understand the above technical scheme, being carried out below in conjunction with specific embodiment to above-mentioned technical proposal
It is described in detail, it should be understood that the specific features in the embodiment of the present invention and embodiment are to the detailed of technical scheme
Illustrate, rather than the restriction to technical scheme, in the absence of conflict, in the embodiment of the present application and embodiment
Technical characteristic can be combined with each other.
Embodiment one
In the present embodiment, a kind of manufacturing method of resistance-variable storing device is provided, as shown in Figure 1, comprising:
Step S101 provides the first substrate, and etches hole on first substrate, along first substrate etching
The direction of the surface of hole inside, the decreasing dimensions of described hole；
Step S102, deposits the first metallic film on said surface, and first metallic film is active metal film；
Step S103 grows the second substrate of epoxy layer and setting on first metallic film；
Step S104 separates first substrate and first metallic film, wherein shape on first metallic film
The corresponding cone structure of Cheng Youyu described hole；
Step S105 is sequentially depositing oxide resistive layer material and the second metallic film on first metallic film,
Using first metallic film as the lower electrode of the memory, using second metallic film as the upper of the memory
Electrode.
In the following, the detailed process of the manufacturing method of resistance-variable storing device provided by the present application is discussed in detail in conjunction with Fig. 1 and Fig. 2
Step:
Firstly, executing step S101, the first substrate is provided, and etch hole on first substrate, along described the
The direction of the surface of one substrate etching hole inside, the decreasing dimensions of described hole.
Preferably, described hole is reverse pyramid.Certain described hole may be inverted cone-shaped, not limit herein
System.
It is in the embodiment of the present application, described to etch hole on first substrate, comprising:
The deposition of nitride film on first substrate；
By nitride film described in poroid pattern etching；
Make protective layer with the nitride film and etch first substrate, forms described hole；
Remove the nitride film.
Specifically, i.e., as shown in (a) in Fig. 2, one layer of nitride film 200 is deposited on first substrate 100；Again
In Fig. 2 shown in (b), after photoetching film is graphical, such as shown in (c), reactive ion etching (RIE) etches the nitride film
200, it specifically can be using the method along<100>crystal orientation etching；For another example shown in (d), protective layer is made with the nitride film 200
First substrate 100 is etched, the hole of similar inverted pyramid structure is gone out using the anisotropic etching of first substrate 100
101, and remove the nitride film 200.
In the embodiment of the present application, first substrate 100 can be smooth, clean insulating substrate Si；The Si
Substrate orientation is<100>；The nitride film can be SiN；The nitride film with a thickness of 50-100nm, the quarter
Erosion gas is CF4With O2；It is 20-30nm at the radius minimum of the pyramid-like opening.
In the embodiment of the present application, the etching is anisotropic etching, and the solution of the anisotropic etching is
The potassium hydroxide of 30%-50% concentration, etching temperature are 60-100 DEG C, etch period 10-15min, the nitride film
200 removing can use hydrofluoric acid solution.
Then, step S102 is executed, in Fig. 2 shown in (e), deposits the first metallic film 300 on said surface, it is described
First metallic film 300 is active metal film.
In the embodiment of the present application, the material of first metallic film 300 is following any one or more combination:
Ag, Cu, Ni.
The method of deposition described further is magnetron sputtering, ion beam sputtering or electron beam evaporation, and this is not restricted.Institute
The first metallic film 300 is stated with a thickness of 100-200nm.
Next, executing step S103, in Fig. 2 shown in (f), epoxy layer is grown on first metallic film 300
400 and setting the second substrate 500.
In the embodiment of the present application, described that the second lining of epoxy layer 400 and setting is grown on first metallic film 300
Bottom 500, comprising:
Epoxy layer 400 is grown on first metallic film 300；
It is heat-treated；
Second substrate 500 is placed on the epoxy layer 400, second substrate 500 is glass substrate.
Further, the heat treatment temperature of the epoxy layer 400 is 150 DEG C, and the processing time is 1h.
Subsequently, step S104 is executed, in Fig. 2 shown in (g), separates first substrate 100 and first metal
Film 300, wherein cone structure 301 corresponding with described hole 101 is formed on first metallic film 300.
Specifically, first substrate 100 can be separated with first metallic film 300 using blade.
Step S105 is executed again, and in Fig. 2 shown in (h), oxide resistance is sequentially depositing on first metallic film 300
Change layer material 600 and the second metallic film 700, using first metallic film 300 as the lower electrode of the memory, with institute
State top electrode of second metallic film 700 as the memory.
Specifically, the method for the deposition oxide resistive layer material 600 is atomic layer deposition (ALD), magnetron sputtering
Or ion beam sputtering, this is not restricted；The thickness of the oxide resistive layer material 600 is generally 150-250nm.The original
Sublayer depositing temperature is 100-400 DEG C；The deposition oxide resistive layer material 600 include transiton metal binary oxides and
Complicated oxide, the transiton metal binary oxides type includes TaOx, HfO2、TiO2, NiO or ZrO2Any one of
Or a variety of combinations, the oxide of the complexity includes SrTiO3。
Further, the method for the second metallic film 700 of the deposition is that magnetron sputtering, ion beam sputtering or electron beam steam
Hair, this is not restricted；Second metallic film 700 with a thickness of 70-100nm；The material of second metallic film is
Any one or more combination below: Ti, Cr, Pt.
The resistance-variable storing device of metal-oxide-metal is formd using the above method, wherein on the resistance-variable storing device
Cone structure 301 it is as shown in Figure 3.Due to when lower electrode adds positive pressure, electric field local enhancement at cone cell electrode, thus cone cell knot
Energy barrier at structure is low compared with other positions, and lower electrode metal reduces the constraint of electronics, so that active metal is in cone structure
Place is easier to be ionized and is easier to migrate under the electric field, so that the operation voltage of resistance-variable storing device is significantly reduced, thus
Reduce power consumption.
For the performance for the resistance-variable storing device for examining method provided by the present application to manufacture, the biasing in top electrode and lower electrode
Pressure is scanned, and the scanning can be constant voltage scanning (CVS), be also possible to ramp voltage scanning (RVS), can also be
Pulse voltage scanning, this is not restricted.Further, when biasing, the top electrode is grounded always.
In the embodiment of the present application, constant voltage scanning is the constant scanning mode of voltage；The slope electricity
Pressure scanning is the scanning mode that voltage increases variation at equal intervals at any time；The described pulse scanning be give specific pulsewidth (when
Between) and voltage (arteries and veins high) scanning mode.
Operation voltage being substantially reduced compared with plane electrode of electrode under being scanned at the memory cone structure 301, because
This, such method can be effectively reduced the operation voltage of resistance-variable storing device, to reduce power consumption.
Finally, enumerating a specific example the application providing method and its effect is described in detail:
The SiN of 100nm is grown on the Si substrate of crystal orientation<100>to carve after the exposure removing of spin coating positive photoresist using reactive ion
Lose SiN.Using anisotropic etching substrate Si, etching solution is the potassium hydroxide of 30% concentration, and etching temperature is 60 DEG C, etching
Time is 10min, forms the substrate Si for having reverse pyramid.Nitridation SiN is removed using hydrofluoric acid solution.It is being carved with down golden word
The Ag active metal of 190nm is deposited on the Si substrate of tower structure as lower electrode.Epoxy layer is grown on Ag active metal and is passed through
150 DEG C are crossed, one layer of glass substrate is finally placed in the processing of 1h.Substrate Si is separated with active metal electrode Ag using blade, this
When pyramid-like lower electrode formed.Finally deposit the Al of 210nm respectively on the bottom electrode2O3With the Pt top electrode of 70nm.It is formed
Resistance-variable storing device.
It is biased operation on the bottom electrode, tests the electric property of device.Meanwhile it being deposited respectively on planar substrate Si
The Al of electrode, 210nm under the Ag of 190nm2O3Sample is compared with the Pt top electrode of 70nm.The comparison of the electric property of the two is such as
(a) is the resistance-variable storing device of the application providing method preparation in Fig. 4, Fig. 4, and (b) is that the resistive of existing planar structure is deposited in Fig. 4
Reservoir.Through detecting, the application provides operation voltage being substantially reduced compared with plane electrode of the lower electrode of resistance-variable storing device, therefore,
Such method can be effectively reduced the operation voltage of resistance-variable storing device, to reduce power consumption.
Specifically, the voltage that RRAM operation is greatly reduced using method provided by the invention, significantly reduces device
The power consumption of part, and simple process, can be compatible with traditional CMOS technology, is easily integrated, and is very beneficial for of the invention extensive
Promotion and application.
Conceived based on same one side, present invention also provides devices prepared by the method using embodiment one, are detailed in implementation
Example two.
Embodiment two
A kind of resistance-variable storing device is provided in the present embodiment, as shown in Figure 3, comprising:
Second substrate 500 is provided with cone structure on the first surface of second substrate 500；
On the first surface, along the direction far from the first surface, it is disposed with epoxy layer 400, the first metal
Film 300, oxide resistive layer material 600 and the second metallic film 700；First metallic film 300 is that active metal is thin
Film；
Wherein, using first metallic film 300 as the lower electrode of the memory, with second metallic film
700 top electrode as the memory.
In the embodiment of the present application, the cone structure is pyramid structure；The top of the pyramid structure half
Diameter is 20-30nm, and specifically, the top is least radius and the minimum dimension end of the pyramid structure.
In the embodiment of the present application, the material of first metallic film 300 is following any one or more combination:
Ag, Cu, Ni；The material of second metallic film 700 is following any one or more combination: Ti, Cr, Pt.
In the embodiment of the present application, second substrate 500 is glass substrate.
By the device that the embodiment of the present invention two is introduced, for the prepared device of the method for the implementation embodiment of the present invention one
Part, so based on the method that the embodiment of the present invention one is introduced, the affiliated personnel in this field can understand the specific structure of the device
And deformation, so details are not described herein.
Technical solution in above-mentioned the embodiment of the present application, at least have the following technical effects or advantages:
The manufacturing method and resistance-variable storing device of resistance-variable storing device provided by the embodiments of the present application, by carving on the first substrate
Borrosion hole hole forms cone structure in the first metal film surfaces, then separates the first substrate and the first metallic film, and first
Deposition oxide resistive layer material and the second metallic film on metallic film, form cone structure top electrode and lower electrode,
Due to when lower electrode adds positive pressure, electric field local enhancement at cone cell electrode, so that the energy barrier at cone structure is compared with other positions
It sets low, lower electrode metal reduces the constraint of electronics, so that active metal is easier to be ionized and in electric field at cone structure
Under be easier to migrate, so that the operation voltage of resistance-variable storing device is significantly reduced, to reduce power consumption.
Obviously, various changes and modifications can be made to the invention without departing from essence of the invention by those skilled in the art
Mind and range.In this way, if these modifications and changes of the present invention belongs to the range of the claims in the present invention and its equivalent technologies
Within, then the present invention is also intended to include these modifications and variations.
Claims (6)
1. a kind of manufacturing method of resistance-variable storing device characterized by comprising
First substrate is provided, and etches hole on first substrate, along the surface of the first substrate etching hole
Direction inside, the decreasing dimensions of described hole；
The first metallic film is deposited on said surface, and first metallic film is active metal film；
The second substrate of epoxy layer and setting is grown on first metallic film；
Separate first substrate and first metallic film, wherein be formed on first metallic film and the hole
The corresponding cone structure in hole；
It is sequentially depositing oxide resistive layer material and the second metallic film on first metallic film, with first metal
Lower electrode of the film as the memory, using second metallic film as the top electrode of the memory.
2. the method as described in claim 1, which is characterized in that described hole is inverted pyramid；The cone structure
For pyramid structure, the top radius of the pyramid structure is 20-30nm.
3. the method as described in claim 1, which is characterized in that described to etch hole on first substrate, comprising:
The deposition of nitride film on first substrate；
By nitride film described in poroid pattern etching；
Make protective layer with the nitride film and etch first substrate, forms described hole；
Remove the nitride film.
4. the method as described in claim 1, which is characterized in that described to etch hole on first substrate, comprising:
Using anisotropic etching method, hole is etched on first substrate.
5. the method as described in claim 1, which is characterized in that
The material of first metallic film is following any one or more combination: Ag, Cu, Ni；
The material of second metallic film is following any one or more combination: Ti, Cr, Pt.
6. the method as described in claim 1, which is characterized in that described to grow epoxy layer on first metallic film and set
Set the second substrate, comprising:
Epoxy layer is grown on first metallic film；
It is heat-treated；
Second substrate is placed on the epoxy layer, second substrate is glass substrate.
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| CN111293221B (en) * | 2020-04-08 | 2022-04-01 | 电子科技大学 | Preparation method of high-performance memristor |
| CN111463347A (en) * | 2020-04-08 | 2020-07-28 | 电子科技大学 | Method for preparing high-performance memristor |
| CN111564556A (en) * | 2020-05-22 | 2020-08-21 | 北京大学 | Pyramid-shaped resistive random access memory and preparation method thereof |
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| CN105390612A (en) * | 2015-12-03 | 2016-03-09 | 中国科学院半导体研究所 | Preparation method for phase change memory based on tapered substrate |
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