CN107275452A - Electroluminescent single-photon source device and preparation method thereof - Google Patents
Electroluminescent single-photon source device and preparation method thereof Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title claims abstract description 38
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims abstract description 55
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 55
- 238000000034 method Methods 0.000 claims abstract description 36
- 238000002347 injection Methods 0.000 claims abstract description 29
- 239000007924 injection Substances 0.000 claims abstract description 29
- 239000002019 doping agent Substances 0.000 claims abstract description 25
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- 238000005260 corrosion Methods 0.000 claims abstract description 13
- 230000007797 corrosion Effects 0.000 claims abstract description 13
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 11
- 230000003647 oxidation Effects 0.000 claims abstract description 9
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 9
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims description 19
- 239000000463 material Substances 0.000 claims description 19
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims description 13
- 238000011065 in-situ storage Methods 0.000 claims description 7
- 238000004544 sputter deposition Methods 0.000 claims description 6
- 238000002207 thermal evaporation Methods 0.000 claims description 5
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 4
- 230000008859 change Effects 0.000 claims description 4
- 239000007788 liquid Substances 0.000 claims description 4
- 239000000470 constituent Substances 0.000 claims description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 1
- 229910052785 arsenic Inorganic materials 0.000 claims 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims 1
- 229910052733 gallium Inorganic materials 0.000 claims 1
- 238000000407 epitaxy Methods 0.000 abstract description 8
- 239000002096 quantum dot Substances 0.000 description 13
- 230000008569 process Effects 0.000 description 8
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- 230000002238 attenuated effect Effects 0.000 description 2
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 2
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- 238000013461 design Methods 0.000 description 2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
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Abstract
A kind of electroluminescent single-photon source device and preparation method thereof, wherein preparation method includes：Step 1, in the upper surface of a substrate sequentially form current-limiting layer and gallium arsenide layer；Step 2, the upper surface center of the device formed in step 1 form the boss as current injection area；The upper surface of the device formed in step 1 removes gallium arsenide layer except other zonal corrosions of boss region, and exposes current-limiting layer；Step 3, after after the current-limiting layer oxidation exposed in step 2, in the upper surface secondary epitaxy formation p-type dopant profiles formula Bragg reflecting layer of the device of step 2 formation, complete the preparation of electroluminescent single-photon source device.The electroluminescent single-photon source device that the present invention is prepared by the method for secondary epitaxy, can effectively reduce the area of Injection Current in electroluminescent structure, so as to reduce threshold current, it is easy to form the pattern limitation of light.
Description
Technical field
The present invention relates to a kind of single-photon source, more particularly to a kind of electroluminescent single-photon source device and preparation method thereof.
Background technology
Single-photon source, refers to the photon that single fixed frequency is sent at interval of a fixed time.One high brightness and steady
Fixed single-photon source has many applications in numerous areas such as quantum informations, such as a kind of non-classical light source：Random number is produced
Device, weak absorption measurement, linear optics calculating, quantum-key distribution and quantum storage etc..
Self-organized quantum dot can carry out three-dimensional limitation to carrier, make the energy of the carrier quantization in three dimensions
And with discrete energy level, show the shell filling characteristic of some similar " atoms ", be referred to as " artificial atom ", be most to have latent
A kind of single-photon source of power.The emission wavelength of current semi-conducting material can be substantially covered from visible ray to infrared band；
The size of self-organized quantum dot can be adjusted in very large range, and wavelength can also be as needed in interior change in a big way.
Quantum dot single-photon source has high oscillator strength, narrow breadth of spectrum line, and will not occur the advantages of light fades.
In addition, self-organized quantum dot device architecture is easily integrated, light pulse pumping can be both used, it would however also be possible to employ electroluminescent
Produce stable single-photon source.Wherein, photic single photon device needs additional laser injection carrier, is difficult to apply to reality
Quantum communications in；Compared with photic monochromatic light minor structure, the integrated level of electroluminescent single photon is high, if with supply-injected structure collection
Into, it will greatly improve its application prospect.But electroluminescent monochromatic light minor structure is more complex, if in order to increase single photon
Extraction efficiency and use micro-cavity structure as photic structure, in the case of device dimensions shrink to micron dimension, it will
Further increase the difficulty of subsequent technique.
The single photon electric driving device realized at present mainly has three kinds of structures：PIN structural, micro-column structure and photonic crystal knot
Structure.
PIN structural therein, DBR is highly doped up and down, and centre is In (Ga) As quantum dot active regions, and prepares n and p-electrode
Contact, PIN structural is often using aoxidizing hole or karat gold belongs to the mode of aperture and isolates single quantum dot light emitting.Wherein aoxidize hole
Method be near active area on growth high Al contents layer, it is necessary to place it in the environment of vapor/nitrogen in make it along material
Material side is aoxidized inward, and by accurately controlling the time of oxidation may be such that, central area forms the non-oxide aperture work of micron dimension
For current injection area, although this method is widely used, but requires very high to oxidizing process.
In addition in order to obtain high q-factor, single photon collection efficiency is improved, electric driving device also has a micro-column structure, that is,
The basis of microtrabeculae prepares n and p-electrode.In general technology difficulty is not present in n-type bottom electrode, and mainly Top electrode p is prepared very
It is difficult.Because microtrabeculae can narrow down to micron dimension in the size of a dimension, and Top electrode is difficult in so small table top
It is upper to prepare.Mode main at present is to fill and lead up technology using BCB (benzocyclobutene), and electronics collar is utilized on the table top filled and led up
Standby Top electrode is scribed, such a structure has successfully been used in the quantum key transmission of laboratory, but this method will to technique
Ask high, make more difficult.
" bridge " of micron dimension can also be taken to be connected Top electrode with microtrabeculae in addition, electric driving device is formed.This structure
Middle light field leak case very little in the case of 4~5 μm of microtrabeculaes, reveals larger in the case of small size microtrabeculae (1~2 μm), and this
The method of kind requires very high to exposure sources.
Therefore, requirement of the above-mentioned method for realizing single photon electric driving device being previously mentioned to technique and experimental facilities is all non-
Chang Gao, this restrict the development of electroluminescent single-photon source and application.How to simplify electroluminescent single-photon source technological process this be realize
The emphasis of electroluminescent single-photon source is also difficult point, is also the place that people research institute focuses on.
The content of the invention
Based on problem above, it is a primary object of the present invention to propose a kind of electroluminescent single-photon source device and its preparation side
Method, for solving at least one of above technical problem.
To achieve these goals, as one aspect of the present invention, the present invention proposes a kind of electroluminescent single-photon source device
Preparation method, including：
Step 1, in the upper surface of a substrate sequentially form current-limiting layer and gallium arsenide layer；
Step 2, the upper surface center of the device formed in step 1 form the boss as current injection area；In step
The upper surface of rapid 1 device formed removes gallium arsenide layer except other zonal corrosions of boss region, and exposes electric current limit
Preparative layer；
Step 3, after after the current-limiting layer oxidation exposed in step 2, it is secondary outer in the upper surface of the device of step 2 formation
Prolong to form p-type dopant profiles formula Bragg reflecting layer, complete the preparation of electroluminescent single-photon source device.
In some embodiments of the invention, in above-mentioned steps 1, before current-limiting layer is formed, in the upper surface of substrate
N-type dopant profiles formula Bragg reflecting layer and active area are also sequentially formed, current-limiting layer is formed at the upper surface of active area.
In some embodiments of the invention, the GaAs that above-mentioned active area includes indium arsenic quanta point and thickness is λ, institute
The centre wavelength of electroluminescent single-photon source device when stating λ for 300K.
In some embodiments of the invention, the side that above-mentioned indium arsenic quanta point is grown using gradient and burning point in situ is combined
Method is formed.
In some embodiments of the invention, after above-mentioned steps 3, in addition to：
Step 4, the upper surface sputtering stripping TiPtAu or Cr/Au in p-type dopant profiles formula Bragg reflecting layer, form ring
Shape Top electrode；
Step 5, substrate thinning is polished after, substrate lower surface thermal evaporation AuGeNi/Au formation bottom electrode, complete electricity
Cause the preparation of single-photon source device.
In some embodiments of the invention, the logarithm of above-mentioned n-type dopant profiles formula Bragg reflecting layer is a, p-type doping
The logarithm of Distributed Bragg Reflection layer is b, wherein, a is more than b.
In some embodiments of the invention, the material of above-mentioned n-type dopant profiles formula Bragg reflecting layer is GaAs/
AlGaAs, the GaAs and AlGaAs thickness are satisfied by λ/4, wherein, the middle cardiac wave of electroluminescent single-photon source device when λ is 300K
Long, the mass fraction of Al components is 0.9~1.0 in AlGaAs.
In some embodiments of the invention, the material of above-mentioned p-type dopant profiles formula Bragg reflecting layer is GaAs/
AlGaAs, the GaAs and AlGaAs thickness meet λ/4；And when forming p-type dopant profiles formula Bragg reflecting layer, first layer
The summation of GaAs thickness and current injection area thickness meets λ/4, wherein, the middle cardiac wave of electroluminescent single-photon source device when λ is 300K
It is long.
In some embodiments of the invention, the area of the upper surface of above-mentioned current injection area is 2~80 μm2。
In some embodiments of the invention, the above-mentioned boss as current injection area be frustum cone structure, its a diameter of 2~
10μm。
In some embodiments of the invention, the material of above-mentioned current-limiting layer is that Al constituent mass fractions are 0.2~0.4
AlGaAs.
In some embodiments of the invention, in above-mentioned steps 2, the proportioning of corrosion corrosive liquid used is H3PO4∶H2O2∶
H2O=3: 1: 40 or HCl: H2O2=1: 1.
To achieve these goals, as another aspect of the present invention, the present invention proposes a kind of electroluminescent single-photon source device
Part, is prepared using the preparation method of above-mentioned electroluminescent single-photon source device.
Electroluminescent single-photon source device proposed by the present invention and preparation method thereof, has the advantages that：
1st, the electroluminescent single-photon source device prepared by the method for secondary epitaxy, can effectively reduce electroluminescent structure
The area of middle Injection Current, so as to reduce threshold current, it is easy to form the pattern limitation of light；
2nd, the current-limiting layer exposed in the present invention only in atmosphere can be fully oxidized, and oxidizing process is not required；
And annular upper electrode can directly be peeled off in device upper surface sputtering and formed, and in the absence of the situation for being formed at small table top, therefore be prepared
Technique is simple, without particular design；Therefore the preparation method of the electroluminescent single-photon source device of the present invention is to technique and experimental facilities
It is less demanding；
3rd, the epitaxial layer of electroluminescent single-photon source is simple in construction without complicated epitaxial structure in the present invention, in the weight of technique
There is good guarantee in renaturation, reliability；
4th, agent structure of the invention is electroluminescent single-photon source structure, has great advantage, and this compared to photic structure
The structure of invention is easy to integrated with external circuit.
Brief description of the drawings
Fig. 1 is the longitdinal cross-section diagram for the electroluminescent single-photon source that one embodiment of the invention is proposed；
Fig. 2 is the birds-eye perspective for the electroluminescent single-photon source that one embodiment of the invention is proposed.
Embodiment
For the object, technical solutions and advantages of the present invention are more clearly understood, below in conjunction with specific embodiment, and reference
Accompanying drawing, the present invention is described in further detail.
Propose a kind of electroluminescent single-photon source device preparation method based on secondary epitaxy, the main body of the electroluminescent single-photon source
Structure is PIN structural, and Distributed Bragg Reflection layer (Distributed Bragg Reflector DBR) is highly doped up and down,
Centre is InAs quantum dot active regions, and prepares n and p-electrode contact.By the structure, the area of Injection Current can be reduced, is tied
The preparation of electroluminescent single-photon source device can be realized by closing the growing method of the dilute point of quantum dot.This electroluminescent single-photon source device preparation method
It is less demanding to technique and experimental facilities, thus feasibility is high.
Specifically, the invention discloses a kind of preparation method of electroluminescent single-photon source device, including：
Step 1, in the upper surface of a substrate sequentially form current-limiting layer and gallium arsenide layer；
Step 2, the upper surface center of the device formed in step 1 form the boss as current injection area；In step
The upper surface of rapid 1 device formed removes gallium arsenide layer except other zonal corrosions of boss region, and exposes electric current limit
Preparative layer；
Step 3, after after the current-limiting layer oxidation exposed in step 2, it is secondary outer in the upper surface of the device of step 2 formation
Prolong to form p-type dopant profiles formula Bragg reflecting layer, complete the preparation of electroluminescent single-photon source device.
The electroluminescent single-photon source device prepared by the method for secondary epitaxy, can effectively reduce in electroluminescent structure
The area of Injection Current, so as to reduce threshold current, it is easy to form the pattern limitation of light, the current-limiting layer that the present invention exposes
Only in atmosphere can be fully oxidized, oxidizing process is not required.
In some embodiments of the invention, the area of the upper surface of above-mentioned current injection area is 2~80 μm2；Preferably,
The above-mentioned boss as current injection area is frustum cone structure, and its a diameter of 2~10 μm, this is due to that frustum cone structure is easier to be formed
The pattern limitation of light.
In some embodiments of the invention, in above-mentioned steps 1, before current-limiting layer is formed, in the upper surface of substrate
N-type dopant profiles formula Bragg reflecting layer and active area are also sequentially formed, current-limiting layer is formed at the upper surface of active area.
The epitaxial layer of electroluminescent single-photon source is simple in construction without complicated epitaxial structure in the present embodiment, in the weight of technique
There is good guarantee in renaturation, reliability.
In some embodiments of the invention, the GaAs that above-mentioned active area includes indium arsenic quanta point and thickness is λ, institute
The centre wavelength of electroluminescent single-photon source device when stating λ for 300K.
In some embodiments of the invention, the side that above-mentioned indium arsenic quanta point is grown using gradient and burning point in situ is combined
Method is formed.
In some embodiments of the invention, after above-mentioned steps 3, in addition to：
Step 4, the upper surface sputtering stripping TiPtAu or Cr/Au in p-type dopant profiles formula Bragg reflecting layer, form ring
Shape Top electrode；
Step 5, substrate thinning is polished after, substrate lower surface thermal evaporation AuGeNi/Au formation bottom electrode, complete electricity
Cause the preparation of single-photon source device.
The annular upper electrode of the present embodiment can directly be peeled off in device upper surface sputtering and formed, in the absence of being formed at small table top
Situation, therefore preparation technology is simple, without particular design；Therefore the preparation method of the electroluminescent single-photon source device of the present embodiment
It is less demanding to technique and experimental facilities.
In some embodiments of the invention, the logarithm of above-mentioned n-type dopant profiles formula Bragg reflecting layer is a, p-type doping
The logarithm of Distributed Bragg Reflection layer is b, wherein, a is more than b, and so the difference of reflectivity can ensure that light goes out upwards due to above and below
Penetrate, wherein, b is typically chosen for 8-12, and a is 24.
In some embodiments of the invention, the doping concentration of above-mentioned p-type dopant profiles formula Bragg reflecting layer from it is upper it
Lower gradual change, to form good Ohmic contact.
In some embodiments of the invention, the material of above-mentioned n-type dopant profiles formula Bragg reflecting layer is GaAs/
AlGaAs, the GaAs and AlGaAs thickness are satisfied by λ/4, wherein, λ is the center of electroluminescent single-photon source device under the conditions of 300K
The mass fraction of Al components is 0.9~1.0 in wavelength, AlGaAs.
In some embodiments of the invention, the material of above-mentioned p-type dopant profiles formula Bragg reflecting layer is GaAs/
AlGaAs, the GaAs and AlGaAs thickness meet λ/4；And when forming p-type dopant profiles formula Bragg reflecting layer, first layer
The summation of GaAs thickness and current injection area thickness meets λ/4, the middle cardiac wave of electroluminescent single-photon source device when wherein λ is 300K
It is long.
In some embodiments of the invention, the material of above-mentioned current-limiting layer is Al constituent masses fraction 0.2~0.4
AlGaAs。
In some embodiments of the invention, in above-mentioned steps 2, the proportioning of corrosion corrosive liquid used is H3PO4∶H2O2∶
H2O=3: 1: 40 or HCl: H2O2=1: 1.
In some embodiments of the invention, the doping concentration of above-mentioned p-type dopant profiles formula Bragg reflecting layer from lower and
Upper is 3 × 1018cm-3~2 × 1019cm-3。
Based on the preparation method of above-mentioned electroluminescent single-photon source device, the invention also discloses a kind of electroluminescent single-photon source device
Part.
Below by way of specific embodiment, electroluminescent single-photon source proposed by the present invention and preparation method thereof is retouched in detail
State.
Embodiment 1
As shown in figure 1, the present embodiment proposes a kind of electroluminescent single-photon source device based on secondary epitaxy, including：
One bottom electrode 1, is the last N-type bottom electrode by thermal evaporation AuGeNi/Au formation after the attenuated polishing of substrate 2；
One substrate 2, material is N+ types GaAs (100) substrate, and it functions as the substrate of outer layer growth；
The DBR layer (Distributed Bragg Reflector) 3 of one n-type (Si) doping, its structure is NdN-type is mixed
Miscellaneous GaAs/Al0.9Ga0.1As, it is grown in GaAs (N+) on substrate, doping concentration is 2 × 1018cm-3, in each cycle,
GaAs thickness is 65.33nm (λ/4), Al0.9Ga0.1As be 77.4nm (λ/4) (growth thickness be with chamber mould under the conditions of 300K
Centre wavelength is exemplified by 930nm)；
One active area 4, includes the GaAs that thickness is long λ of chamber and the InAs quantum dots of gradient growth, one of chamber
Long GaAs thickness is 261.32nm (growth thickness be centre wavelength is in 930nm when chamber mould is in 300K exemplified by)；
Wherein, the active area 4 includes InAs quantum dots 5, be use gradient growth and it is in situ burn a method being combined with
The formation of growth quantum point alkene point, growth course is the growth quantum point under the conditions of 540 DEG C, and passes through RHEED (Reflection
High-energy electron diffraction, refletcion high-energy electron diffraction) determine critical deposit amount θc, at 670 DEG C
Hot conditions under burn point after stop operating substrate 2, the growing quantum dots in situ under the conditions of 540 DEG C, wherein deposit amount are θc-Δ
θc；
One current-limiting layer 6, its material composition is Al0.3Ga0.7As；
One current injection area 7, its material composition is GaAs, and its thickness is 30nm, and it is prepared as on current-limiting layer 6 raw
After long GaAs layers, then the border circular areas for going out a diameter of 5 μm as mask lithography with positive photoresist uses H as current injection layer3PO4∶
H2O2∶H2The GaAs layers of O=3: 1: 40 corrosion corrosion other parts are to current-limiting layer 6, corruption of such a corrosive liquid to GaAs
It is about 2nm/s to lose speed, suitably excessive erosion current-limiting layer 6 can be made to expose the Al in atmosphere, exposed0.3Ga0.7As is in air
It is current-limiting layer 6 after middle oxidation；
The DBR layer 8 of one p-type (Be) doping, its material is to include N as the DBR layer 3 that n-type (Si) is adulteratedup(Nup＜
Nd) to the GaAs/Al of p-type doping0.9Ga0.1As, doping concentration is from bottom to top 3 × 1018cm-3To 2 × 1019cm-3In the range of gradually
Become, to form Ohmic contact, the thickness of the DBR layer 8 of p-type doping is：First layer GaAs thickness be 35.33nm, with electric current
GaAs (30nm) gross thickness is λ/4 in injection region 7, and the thickness per centering GaAs is 65.33nm (λ/4) afterwards, per centering
Al0.9Ga0.1As thickness is 77.4nm (λ/4), the growth thickness be using chamber mould in 300K centre wavelength 930nm as
Example；
One Top electrode 9, material is TiPtAu, as shown in Fig. 2 the Top electrode 9 is shaped as annular, passes through and is sputtered after photoetching
The method of stripping metal is obtained.
Embodiment 2
The present embodiment proposes a kind of preparation method of the electroluminescent single-photon source device based on secondary epitaxy, as follows：
Step 1, in the upper surface of a substrate sequentially form current-limiting layer and GaAs layers；Specifically comprise the following steps：
Step 1-1, first in N+The Epitaxial growth thickness of type GaAs substrates 2 is that 300nm, doping concentration are 2 × 1018cm-3
N-type GaAs be used as cushion；
Step 1-2, then 24 pairs of epitaxial growth, material structure GaAs/Al0.9Ga0.1The lower floor DBR3 of As n-type doping,
Wherein, doping concentration is 2 × 1018cm-3, GaAs and AlGaAs thickness are that (with chamber mould, in 300K, centre wavelength exists for λ/4
Exemplified by 930nm, GaAs is 65.33nm, Al0.9Ga0.1As is 77.4nm), as the lower reflecting surface of electroluminescent single-photon source,
Form resonant cavity to increase the extraction efficiency of single photon with upper DBR and active area；
Step 1-3 and then epitaxial growth active area 4, its epitaxial growth uses gradient growth and the point in situ that burns is combined
Method, the thick GaAs of 50nm are first grown under the conditions of 580 DEG C when growing active area, after cool the temperature to after 540 DEG C and grow
InAs quantum dots, pass through refletcion high-energy electron diffraction RHEED (Reflection high-energy electron
Diffraction) record quantum dot is critical into the island time, and then calculates critical into island deposit amount θc；Then again at 670 DEG C
Hot conditions under by InAs quantum dot desorptions, here it is in situ burn point process；After original position burning point process terminates, regrowth
80.66nm GaAs, stop operating substrate afterwards, and growth deposit amount is θc-ΔθcInAs quantum dots, here it is gradient grow
Process, so that alkene point region can be found along gradient direction in follow-up spectrum test；Grow to form InAs quantum in gradient
After point, in the upper surface epitaxial growth 130.66nm of InAs quantum dots GaAs, the preparation of active area 4 is completed.
Step 1-4, the Al for then growing low Al components0.3GaAs is as current-limiting layer 6, and thickness is that λ/4 (are existed with chamber mould
Centre wavelength is exemplified by 930nm during 300K, and thickness is 69.72nm)；
Step 2, by photoetching, corrosion, in the step 1 upper surface of device center formed a round platform conduct
Current injection area；Other zonal corrosions of the upper surface of device remove described GaAs layers and expose the current-limiting layer in step 1；
Specifically, grown on current-limiting layer 6 after 30nm GaAs, technique carried out using molecular beam epitaxial device MBE,
The circular configuration of 5 μ m diameters is first made by lithography with positive photoresist as current injection area 7, after wet etching is carried out by mask of positive photoresist, it is rotten
Erosion liquid formulations are H3PO4∶H2O2∶H2O=3: 1: 40, the corrosion rate to GaAs is about 2nm/s, is made by the control corrosion rate time
Its corrode to current-limiting layer 6, can excessive erosion in right amount, current-limiting layer 6 is exposed in atmosphere.
Step 3, after expose in step 2 the current-limiting layer oxidation after, the upper surface two of device in the step 2
It is secondary to be epitaxially formed p-type doping DBR layer, the preparation of electroluminescent single-photon source device is completed, following steps are specifically included：
Step 3-1, after forming current limit after the oxidation of a period of time, and the border circular areas of photoresist covering is then electric current
Injection region, thus can be limited current in the small area region of 5 μ m diameters；
Step 3-2, after cleaning process epitaxial wafer is put into MBE growth rooms progress secondary epitaxy growth, growth
The DBR layer 8 of 10 pairs of p-type doping is included, material structure and growth thickness are as lower floor DBR, and p-type doping concentration from bottom to top exists
3×1018cm-3To 2 × 1019cm-3Interior gradual change, to form Ohmic contact；Wherein, first layer GaAs thickness is 35.33nm, with
Gross thickness with GaAs (30nm) in current injection area 7 is λ/4, is afterwards 65.33nm (λ/4), each pair per centering GaAs thickness
Middle Al0.9Ga0.1As thickness is 77.4nm (λ/4).
Step 4, the upper surface sputtering stripping TiPtAu in p-type doping DBR layer 8, form annular upper electrode 9；
Specifically, peeling off TiPtAu by being sputtered after photoetching, the upper surface of the DBR layer 8 adulterated in p-type forms electric in annular
Pole 9.
Step 5, by after the attenuated polishing of substrate 2, in the lower surface thermal evaporation AuGeNi/Au formation bottom electrodes 1 of substrate 2, just
It is connected in external circuit.
Prepared by above-mentioned material extension and technique, finally give electroluminescent single-photon source device, the electroluminescent single-photon source
The top view of device is as shown in Figure 2.
During electroluminescent single-photon source device specific works proposed by the present invention, the making alive Injection Current in annular upper electrode 9,
Because the current-limiting layer 6 after oxidation has the effect of current limit, electric current can only be by the circular center of the μ m diameter of center 5
Current injection area, can only so excite the quantum dot under round platform region, can effectively reduce the area of electric current injection, and knot
Electroluminescent single-photon source device can be finally fabricated to by closing the growing method of dilute point.
Particular embodiments described above, has been carried out further in detail to the purpose of the present invention, technical scheme and beneficial effect
Describe in detail bright, it should be understood that the foregoing is only the present invention specific embodiment, be not intended to limit the invention, it is all
Within the spirit and principles in the present invention, any modification, equivalent substitution and improvements done etc. should be included in the protection of the present invention
Within the scope of.
Claims (10)
1. a kind of preparation method of electroluminescent single-photon source device, including：
Step 1, in the upper surface of a substrate sequentially form current-limiting layer and gallium arsenide layer；
Step 2, the upper surface center of the device formed in step 1 form the boss as current injection area；In step 1 shape
Into the upper surface of device remove the gallium arsenide layer except other zonal corrosions of boss region, and expose the electric current
Limiting layer；
Step 3, after after the current-limiting layer oxidation exposed in step 2, it is secondary outer in the upper surface of the device of step 2 formation
Prolong to form p-type dopant profiles formula Bragg reflecting layer, complete the preparation of the electroluminescent single-photon source device.
2. preparation method as claimed in claim 1, wherein, in the step 1, before the current-limiting layer is formed, in institute
The upper surface for stating substrate also sequentially forms n-type dopant profiles formula Bragg reflecting layer and active area, and the current-limiting layer is formed
In the upper surface of the active area.
3. preparation method as claimed in claim 2, wherein, the arsenic that the active area includes indium arsenic quanta point and thickness is λ
Change gallium, the centre wavelength of the electroluminescent single-photon source device when λ is 300K；The indium arsenic quanta point is grown using gradient
Formed with the method in situ for burning point combination.
4. preparation method as claimed in claim 2, wherein, after the step 3, in addition to：
Step 4, the upper surface sputtering stripping TiPtAu or Cr/Au in the p-type dopant profiles formula Bragg reflecting layer, form ring
Shape Top electrode；
Step 5, by the substrate thinning polish after, the substrate lower surface thermal evaporation AuGeNi/Au formation bottom electrode, it is complete
Into the preparation of the electroluminescent single-photon source device.
5. preparation method as claimed in claim 2, wherein, the logarithm of the n-type dopant profiles formula Bragg reflecting layer is a,
The logarithm of the p-type dopant profiles formula Bragg reflecting layer is b, and a is more than b.
6. preparation method as claimed in claim 2, wherein, the material of the n-type dopant profiles formula Bragg reflecting layer is
GaAs/AlGaAs, the GaAs and AlGaAs thickness are satisfied by λ/4, the electroluminescent single-photon source device when λ is 300K
Centre wavelength, the mass fraction of Al components is 0.9~1.0 in the AlGaAs.
7. preparation method as claimed in claim 1, wherein, the material of the p-type dopant profiles formula Bragg reflecting layer is
GaAs/AlGaAs, the thickness of the GaAs and AlGaAs meets λ/4；And forming the p-type dopant profiles formula Bragg reflection
During layer, the summation of first layer GaAs thickness and the current injection area thickness meets λ/4, and the λ is described electroluminescent when being 300K
The centre wavelength of single-photon source device.
8. preparation method as claimed in claim 1, wherein, the area of the upper surface of the current injection area is 2~80 μm2；Institute
It is frustum cone structure, its a diameter of 2~10 μm to state as the boss of current injection area.
9. preparation method as claimed in claim 1, wherein, the material of the current-limiting layer is that Al constituent mass fractions are
0.2~0.4 AlGaAs；In step 2, the proportioning of corrosion corrosive liquid used is H3PO4∶H2O2∶H2O=3: 1: 40 or HCl:
H2O2=1: 1.
10. a kind of electroluminescent single-photon source device, using electroluminescent single-photon source device as claimed in any one of claims 1-9 wherein
Preparation method prepare.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111181006A (en) * | 2018-11-12 | 2020-05-19 | 中国科学院半导体研究所 | On-chip bonded Si/III-V quantum dot single photon source and preparation method thereof |
| CN111987164A (en) * | 2020-08-25 | 2020-11-24 | 杰华特微电子（杭州）有限公司 | LDMOS device and manufacturing method thereof |
| WO2021047736A1 (en) * | 2019-09-13 | 2021-03-18 | Rheinisch-Westfälische Technische Hochschule (Rwth) Aachen | Optically active quantum point defined by gates |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1149757A (en) * | 1996-09-05 | 1997-05-14 | 中国科学院半导体研究所 | Technology for producing lateral current limiting structure of semiconductor mesa |
| CN101499617A (en) * | 2008-01-30 | 2009-08-05 | 中国科学院半导体研究所 | Single proton source for implementing electrical injection by photonic crystal microcavity and wafer linking technique |
| CN101764354A (en) * | 2009-12-30 | 2010-06-30 | 北京工业大学 | Multi-wavelength vertical cavity surface emitting laser based on one-dimension photonic crystal and preparation method thereof |
| CN103872580A (en) * | 2014-01-24 | 2014-06-18 | 中国科学院长春光学精密机械与物理研究所 | Dielectric film current limiting type vertical cavity surface emitting laser and manufacturing method thereof |
-
2017
- 2017-05-25 CN CN201710381686.7A patent/CN107275452A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1149757A (en) * | 1996-09-05 | 1997-05-14 | 中国科学院半导体研究所 | Technology for producing lateral current limiting structure of semiconductor mesa |
| CN101499617A (en) * | 2008-01-30 | 2009-08-05 | 中国科学院半导体研究所 | Single proton source for implementing electrical injection by photonic crystal microcavity and wafer linking technique |
| CN101764354A (en) * | 2009-12-30 | 2010-06-30 | 北京工业大学 | Multi-wavelength vertical cavity surface emitting laser based on one-dimension photonic crystal and preparation method thereof |
| CN103872580A (en) * | 2014-01-24 | 2014-06-18 | 中国科学院长春光学精密机械与物理研究所 | Dielectric film current limiting type vertical cavity surface emitting laser and manufacturing method thereof |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111181006A (en) * | 2018-11-12 | 2020-05-19 | 中国科学院半导体研究所 | On-chip bonded Si/III-V quantum dot single photon source and preparation method thereof |
| CN111181006B (en) * | 2018-11-12 | 2021-05-11 | 中国科学院半导体研究所 | On-chip bonded Si/III-V quantum dot single photon source and preparation method thereof |
| WO2021047736A1 (en) * | 2019-09-13 | 2021-03-18 | Rheinisch-Westfälische Technische Hochschule (Rwth) Aachen | Optically active quantum point defined by gates |
| CN111987164A (en) * | 2020-08-25 | 2020-11-24 | 杰华特微电子（杭州）有限公司 | LDMOS device and manufacturing method thereof |
| CN111987164B (en) * | 2020-08-25 | 2022-07-15 | 杰华特微电子股份有限公司 | LDMOS device and manufacturing method thereof |
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