CN107256907A - Improve the annealing process of PERC high-efficiency battery piece outward appearance small particles - Google Patents
Improve the annealing process of PERC high-efficiency battery piece outward appearance small particles Download PDFInfo
- Publication number
- CN107256907A CN107256907A CN201710470048.2A CN201710470048A CN107256907A CN 107256907 A CN107256907 A CN 107256907A CN 201710470048 A CN201710470048 A CN 201710470048A CN 107256907 A CN107256907 A CN 107256907A
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- CN
- China
- Prior art keywords
- silicon chip
- boiler tube
- annealing process
- passed
- small particles
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 22
- 238000000137 annealing Methods 0.000 title claims abstract description 19
- 239000002245 particle Substances 0.000 title claims abstract description 14
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 title claims abstract description 9
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 title claims abstract description 9
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 title claims abstract description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 34
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 31
- 239000010703 silicon Substances 0.000 claims abstract description 31
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 18
- 239000012535 impurity Substances 0.000 claims abstract description 11
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 4
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 4
- 239000001301 oxygen Substances 0.000 claims abstract description 4
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 4
- 230000000052 comparative effect Effects 0.000 description 7
- 230000018044 dehydration Effects 0.000 description 2
- 238000006297 dehydration reaction Methods 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1864—Annealing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The present invention relates to solar battery sheet technical field, especially a kind of annealing process of improvement PERC high-efficiency battery piece outward appearance small particles, the annealing process comprises the following steps：a：Furnace tube temperature is turned down as 550 DEG C, then silicon chip is put into boiler tube, 5000 ± 1000sccm oxygen is subsequently passed, occurs oxidation reaction with impurities on surface of silicon chip；b:5000 ± 1000sccm nitrogen is passed through into boiler tube again to be purged, impurities on surface of silicon chip is removed；c：Temperature in boiler tube is promoted to 700 ± 20 DEG C, 1000sccm nitrogen is then passed to protect silicon chip surface, it is to avoid secondary pollution；d：Silicon chip goes out after boiler tube to be cooled to 550 DEG C, and the present invention can remove impurities on surface of silicon chip again, and preferably protect silicon chip surface on the basis of conventional annealing technique removes steam.
Description
Technical field
It is especially a kind of to improve PERC high-efficiency battery piece outward appearance small particles the present invention relates to solar battery sheet technical field
Annealing process.
Background technology
Conventional annealing is that high temperature removes steam, increases the compactness of aluminum oxide, passes in and out boiler tube using same temperature at present, lead
Cause silicon chip surface can not be sufficiently formed diaphragm in annealing boiler tube, cell piece surface is easily adhered the impurity dust in environment,
Cause cell piece surface to have the generation of situation of small particles, influence power.
The content of the invention
The technical problem to be solved in the present invention is：In order to solve annealing process of the prior art cell piece in high temperature dehydration vapour
In, the problem of cell piece surface easily produces small particles now provides a kind of moving back for improvement PERC high-efficiency battery piece outward appearance small particles
Ignition technique.
The technical solution adopted for the present invention to solve the technical problems is：One kind improves PERC high-efficiency battery piece outward appearances little Bai
The annealing process of point, the annealing process comprises the following steps：
a：Furnace tube temperature is turned down as 550 DEG C, then silicon chip is put into boiler tube, 5000 ± 1000sccm is subsequently passed
Oxygen, occurs oxidation reaction with impurities on surface of silicon chip；
b:5000 ± 1000sccm nitrogen is passed through into boiler tube again to be purged, impurities on surface of silicon chip is removed；
c：Temperature in boiler tube is promoted to 700 ± 20 DEG C, 1000sccm nitrogen is then passed to protect silicon chip surface, keeps away
Exempt from secondary pollution；
d：Silicon chip, which goes out after boiler tube, is cooled to 550 DEG C.
The beneficial effects of the invention are as follows：The present invention can remove silicon again on the basis of conventional annealing technique removes steam
Piece surface impurity, and preferably protect silicon chip surface.
Embodiment
Embodiment 1
A kind of annealing process of improvement PERC high-efficiency battery piece outward appearance small particles, the annealing process comprises the following steps：
a：Furnace tube temperature is turned down as 550 DEG C, then silicon chip is put into boiler tube, 5000 ± 1000sccm is subsequently passed
Oxygen, occurs oxidation reaction with impurities on surface of silicon chip；
b:5000 ± 1000sccm nitrogen is passed through into boiler tube again to be purged, impurities on surface of silicon chip is removed；
c：Temperature in boiler tube is promoted to 700 ± 20 DEG C, 1000sccm nitrogen is then passed to protect silicon chip surface, keeps away
Exempt from secondary pollution；
d：Silicon chip, which goes out after boiler tube, is cooled to 550 DEG C.
Comparative example 1
Conventional silicon wafers annealing process high temperature dehydration vapour, it is specific as follows：Silicon chip enters after boiler tube, and constant temperature is kept in boiler tube
Degree, and it is passed through nitrogen.
The technique prepared with the technique in above-mentioned comparative example 1 in 30000 silicon chips and embodiment 1 prepares 1600 silicon chips,
There is the quantity such as table 1 of small particles on silicon chip：
Table 1
| Type | Yield | Small particles quantity | Small particles ratio |
| Comparative example 1 | 30000 | 279 | 0.93% |
| Embodiment 1 | 1600 | 4 | 0.25% |
It can be seen from Table 1 that：Small particles situation has clear improvement, and effectively raises the yield rate of silicon chip.
Prepare 2000 silicon chips respectively with the technique in the technique and embodiment 1 in above-mentioned comparative example 1, silicon chip it is parametric
Can contrast table such as table 2：
Table 2
In table 2：The point on the basis of the normal power of comparative example 1, is on the occasion of less than contrast higher than the normal power of comparative example 1
The normal power of example 1 is negative value；
With reference to table 2, the annealing process of the improvement PERC high-efficiency battery piece outward appearance small particles in embodiment 1 is compared to comparative example
Cell piece prepared by conventional silicon wafers annealing process in 1, power, opens and presses and hinder, fills and efficiency has been lifted.
The above-mentioned desirable embodiment according to the present invention is enlightenment, and by above-mentioned description, relevant staff is complete
Various changes and amendments can be carried out without departing from the scope of the technological thought of the present invention'.This invention it is technical
Scope is not limited to the content on specification, it is necessary to its technical scope is determined according to right.
Claims (1)
1. a kind of annealing process of improvement PERC high-efficiency battery piece outward appearance small particles, it is characterised in that：The annealing process include with
Lower step：
a：Furnace tube temperature is turned down as 550 DEG C, then silicon chip is put into boiler tube, 5000 ± 1000sccm oxygen is subsequently passed,
Occurs oxidation reaction with impurities on surface of silicon chip；
b:5000 ± 1000sccm nitrogen is passed through into boiler tube again to be purged, impurities on surface of silicon chip is removed；
c：Temperature in boiler tube is promoted to 700 ± 20 DEG C, 1000sccm nitrogen is then passed to protect silicon chip surface, it is to avoid two
Secondary pollution；
d：Silicon chip, which goes out after boiler tube, is cooled to 550 DEG C.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710470048.2A CN107256907A (en) | 2017-06-20 | 2017-06-20 | Improve the annealing process of PERC high-efficiency battery piece outward appearance small particles |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710470048.2A CN107256907A (en) | 2017-06-20 | 2017-06-20 | Improve the annealing process of PERC high-efficiency battery piece outward appearance small particles |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107256907A true CN107256907A (en) | 2017-10-17 |
Family
ID=60023206
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710470048.2A Pending CN107256907A (en) | 2017-06-20 | 2017-06-20 | Improve the annealing process of PERC high-efficiency battery piece outward appearance small particles |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107256907A (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101752213A (en) * | 2008-12-08 | 2010-06-23 | 北京有色金属研究总院 | Low temperature heat-treatment process for eliminating water mist on silicon chip surface |
| CN102315310A (en) * | 2010-06-30 | 2012-01-11 | 比亚迪股份有限公司 | Diffusion process in solar panel preparation |
| CN102653887A (en) * | 2011-03-04 | 2012-09-05 | 无锡尚德太阳能电力有限公司 | Treatment method and etching method of crystalline silicon wafer with oil stains |
| CN104051572A (en) * | 2014-06-09 | 2014-09-17 | 山东力诺太阳能电力股份有限公司 | High-temperature annealing method for silicon nitride film |
| CN204224744U (en) * | 2014-11-18 | 2015-03-25 | 天津中环领先材料技术有限公司 | A kind of annealing furnace for silicon wafer film preparation |
| CN105720135A (en) * | 2016-02-24 | 2016-06-29 | 江苏永能光伏科技有限公司 | Cooling and annealing process of solar cell |
-
2017
- 2017-06-20 CN CN201710470048.2A patent/CN107256907A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101752213A (en) * | 2008-12-08 | 2010-06-23 | 北京有色金属研究总院 | Low temperature heat-treatment process for eliminating water mist on silicon chip surface |
| CN102315310A (en) * | 2010-06-30 | 2012-01-11 | 比亚迪股份有限公司 | Diffusion process in solar panel preparation |
| CN102653887A (en) * | 2011-03-04 | 2012-09-05 | 无锡尚德太阳能电力有限公司 | Treatment method and etching method of crystalline silicon wafer with oil stains |
| CN104051572A (en) * | 2014-06-09 | 2014-09-17 | 山东力诺太阳能电力股份有限公司 | High-temperature annealing method for silicon nitride film |
| CN204224744U (en) * | 2014-11-18 | 2015-03-25 | 天津中环领先材料技术有限公司 | A kind of annealing furnace for silicon wafer film preparation |
| CN105720135A (en) * | 2016-02-24 | 2016-06-29 | 江苏永能光伏科技有限公司 | Cooling and annealing process of solar cell |
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Application publication date: 20171017 |