CN107256836B - A kind of detection method of photoresist adhesion - Google Patents
A kind of detection method of photoresist adhesion Download PDFInfo
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- CN107256836B CN107256836B CN201710444066.3A CN201710444066A CN107256836B CN 107256836 B CN107256836 B CN 107256836B CN 201710444066 A CN201710444066 A CN 201710444066A CN 107256836 B CN107256836 B CN 107256836B
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- film layer
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- adhesion
- detection method
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- 229920002120 photoresistant polymer Polymers 0.000 title claims abstract description 79
- 238000001514 detection method Methods 0.000 title claims abstract description 23
- 239000010408 film Substances 0.000 claims abstract description 106
- 238000005530 etching Methods 0.000 claims abstract description 15
- 238000012360 testing method Methods 0.000 claims abstract description 13
- 238000001000 micrograph Methods 0.000 claims abstract description 12
- 239000010409 thin film Substances 0.000 claims abstract description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 8
- 239000000377 silicon dioxide Substances 0.000 claims description 7
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- 238000001039 wet etching Methods 0.000 abstract description 11
- 238000005516 engineering process Methods 0.000 abstract description 9
- 239000000853 adhesive Substances 0.000 abstract description 3
- 230000001070 adhesive effect Effects 0.000 abstract description 3
- 238000005259 measurement Methods 0.000 abstract description 3
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 3
- 230000003628 erosive effect Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910052681 coesite Inorganic materials 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 239000012467 final product Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 230000005856 abnormality Effects 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001568 sexual effect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Sampling And Sample Adjustment (AREA)
Abstract
The present invention provides a kind of detection method of photoresist adhesion, it include: that a wafer is provided, in presetting first area interconnected and second area on wafer, in preparing the first film layer on first area, in preparing the second film layer on second area, the first film thickness degree is less than the second thin film layer thickness；In coating a photoresist layer on wafer, photoresist layer covering part the first film layer has a coinciding edges with the first film layer place of overlapping；It is mask etching the first film layer and the second film layer to obtain a test sample using photoresist layer；Use the scanning electron microscope image of a scanning electron microscope acquisition testing sample to be supplied to the adhesion that user judges photoresist layer.Beneficial effects of the present invention: efficiently using the exposure technology and wet-etching technology of existing fab, assess photoresist and the adhesive force of the film layer on wafer, without additional deformation measurement platform.
Description
Technical field
The present invention relates to wet-etching technology technical field more particularly to a kind of detection methods of photoresist adhesion.
Background technique
When etching the film layer on wafer using wet-etching technology for exposure mask using photoresist, the adhesion meeting of photoresist
The craft precision of influence wet etching and final product quality.Adhesion difference leads to serious side etch, and lines broaden,
Figure is possibly even caused all to disappear, wet-etching technology requires photoresist and following substrate to have good adhesion.Example
Such as, SiO is etched in semiconductor wet2In the process, photoresist is in SiO2The adhesion on surface must in controllable and stable range,
Otherwise it will affect to SiO2Etching precision and final product quality.
It is an important topic that how effectively the adhesion to photoresist on wafer, which measure, in semiconductor wet
When etching the film layer on wafer, there is the technical arrangement plan of selection and wet etching to photoresist critically important guidance to anticipate
Justice.
Summary of the invention
Aiming at the problems existing in the prior art, photoresist adhesion can be quick and precisely judged the present invention provides a kind of
Detection method.
The present invention adopts the following technical scheme:
A kind of detection method of photoresist adhesion, the detection method include:
Step S1, a wafer is provided, presets first area interconnected and second area, Yu Suoshu on Yu Suoshu wafer
The first film layer is prepared on first area, the second film layer is prepared on Yu Suoshu second area, the first film layer is described
Thickness above wafer is less than thickness of second film layer above the wafer；
Step S2, a photoresist layer is coated on Yu Suoshu wafer, the first film layer described in the photoresist layer covering part,
The first film layer described in second film layer and another part is not covered by the photoresist layer, the photoresist layer with it is described
The first film layer place of overlapping has a coinciding edges；
Step S3, using the photoresist layer as the second film layer described in mask etching and the first film layer；
Step S4, the situation that is etched at the coinciding edges is corresponded to according to the first film layer and judges the photoresist
The adhesion of layer.
Preferably, in the step S4, the first film layer of the correspondence coinciding edges after over etching is acquired
To obtain a test sample, the adhesion of the photoresist layer is judged by the test sample.
Preferably, so in step S4, a scanning electron microscope is used to shoot the test sample to obtain a scanning electron microscope (SEM) photograph
Picture judges the light by the etching situation for the first film layer for corresponding to the coinciding edges in observation scanning electron microscope image
The adhesion of photoresist layer.
Preferably, the specific judgment method of the test sample is as follows:
If in the scanning electron microscope image, positioned at the coinciding edges side and be located at below the photoresist described the
One film layer is etched, then the adhesion of the photoresist is poor；
If in the scanning electron microscope image, positioned at the coinciding edges side and be located at below the photoresist described the
One film layer is not etched, then the adhesion of the photoresist is preferable.
Preferably, positioned at the coinciding edges side and the first film layer that is etched that is located at below the photoresist
The adhesion of area and the photoresist layer is inversely proportional.
Preferably, the thickness absolute value of the difference model of the first film layer and second film layer above the wafer
Enclose for
Preferably, thickness range of the first film layer above the wafer is
Preferably, thickness range of second film layer above the wafer is
Preferably, the first film layer and the second film layer are silica or the first film layer and the second film layer
For silicon nitride
The first area and the second area are rectangular area.
Beneficial effects of the present invention: wet process quarter is carried out using the special graph that the first film layer and the second film layer are constituted
Erosion, it is glutinous in photoresist layer using the difference in height and light reflection principle since the first film layer and the second film layer have difference in height
A degree of side can be caused to draw photoresist layer in the case where attached property difference, so that the development final to the first film layer causes one
The influence for determining degree, in the etching feelings at the edge being overlapped with photoresist layer after being etched according to the first film layer in special graph
Condition judges the adhesion of photoresist layer, efficiently uses the exposure technology and wet-etching technology of existing fab, exists to photoresist
The adhesive force of thin-film surface is assessed, without additional deformation measurement platform.
Detailed description of the invention
Fig. 1 is a kind of flow chart of the detection method of photoresist adhesion；
Fig. 2 is the schematic diagram of step S1 in a preferred embodiment of the present invention；
Fig. 3 is the schematic diagram of step S2 in a preferred embodiment of the present invention；
Fig. 4 is the schematic diagram of step S3 in a preferred embodiment of the present invention；
Fig. 5 is the preferable scanning electron microscope (SEM) photograph of adhesion in the present invention；
Fig. 6 is the scanning electron microscope (SEM) photograph that adhesion is poor in the present invention；
Fig. 7 is the diagrammatic cross-section of special construction in a preferred embodiment of the present invention.
Specific embodiment
It should be noted that in the absence of conflict, following technical proposals be can be combined with each other between technical characteristic.
A specific embodiment of the invention is further described with reference to the accompanying drawing:
As shown in figs. 1-7, a kind of detection method of photoresist adhesion, the above method are suitable for judging photoresist and wafer
The adhesion between film layer on 1, above-mentioned detection method include:
Step S1, a wafer 1 is provided, first area interconnected and second area are preset on Yu Jingyuan 1, in the firstth area
Domain prepares the first film layer 2, prepares the second film layer 3 in second area, thickness of the first film layer 2 above wafer 1 is less than
Thickness of second film layer 3 above wafer 1；
Step S2, a photoresist layer 4,4 covering part the first film layer 2 of photoresist layer, the second film are coated on Yu Jingyuan 1
Layer 3 and another part the first film layer 2 are not photo-etched the covering of glue-line 4, and photoresist layer 4 and 2 place of overlapping of the first film layer have
There are a coinciding edges 5；
Step S3, with photoresist layer 4 for mask etching the first film layer 2 and the second film layer 3；
Step S4, sticking for photoresist layer 4 is judged according to the situation that is etched at the corresponding coinciding edges 5 of the first film layer 2
Property.
In preferred embodiments of the present invention, in step S4, the first film of the correspondence coinciding edges 5 after over etching is acquired
Layer 2 judges the adhesion of photoresist layer 4 by test sample to obtain a test sample.
In preferred embodiments of the present invention, in step S4, use a scanning electron microscope shot detection sample to obtain a scanning
Sem image judges photoresist by the etching situation for the first film layer 2 for corresponding to coinciding edges 5 in observation scanning electron microscope image
The adhesion of layer 4.
In preferred embodiments of the present invention, the specific judgment method of test sample is as follows:
If in scanning electron microscope image, positioned at 5 side of coinciding edges and the first film layer 2 below photoresist is carved
Erosion, then photoresist sticks sexual abnormality；
If in scanning electron microscope image, positioned at 5 side of coinciding edges and the first film layer 2 below photoresist is not carved
Erosion, then the adhesion of photoresist is normal.
In conclusion this programme is a kind of offline detection mode, thin using first in semiconductor wet etching processing procedure
The special graph that film layer 2 and the second film layer 3 are constituted carries out wet etching, since the first film layer and the second film layer have height
It is poor to spend, and using the difference in height and light reflection principle, can cause centainly to photoresist layer in the case where photoresist layer adhesion is poor
The side of degree is drawn, and can be etched by the first film layer that beneath portions are drawn in side, so that the development final to the first film layer causes
A degree of influence, at the quarter at the edge being overlapped with photoresist layer 4 after being etched according to the first film layer in special graph
Lose situation, positioned at above-mentioned 5 side of coinciding edges and be located at above-mentioned photoresist below above-mentioned the first film layer 2 be etched first
The area of film layer 2 is bigger, and photoresist layer 4 is drawn more serious by side, and the adhesion of photoresist layer 4 is poorer, that is, utilizes special construction
So that photoresist layer 4 is formed special graph on wafer 1, then carry out wet etching, finally detects the first film on special graph
The amount of variability 6 etching degree of 4 shield portions of glue-line (corresponding be photo-etched) of layer 2 characterizes the degree that photoresist is drawn by side, thus
The adhesion monitoring for achieving the purpose that photoresist, efficiently uses the exposure technology and wet-etching technology of existing fab, to light
Photoresist is assessed in the adhesive force of film surface, without additional deformation measurement platform.
In preferred embodiments of the present invention, in scanning electron microscope image, it is located at above-mentioned 5 side of coinciding edges and is located at above-mentioned light
The area for the first film layer 2 that above-mentioned the first film layer 2 below photoresist is etched and the adhesion of above-mentioned photoresist layer 4 are at anti-
Than.
In the present embodiment, it is detected with scanning electron microscope, the amount of variability 6 of the first film layer 2 is sticking for photoresist layer 4
Property a characterization, amount of variability 6 is bigger, and adhesion is poorer, specifically can refer to Fig. 5-6, and Fig. 5 is the preferable image of adhesion, Fig. 6
For the image that adhesion is poor.
In preferred embodiments of the present invention, the thickness of the first film layer and second film layer above the wafer
Spending absolute value of the difference range is
In preferred embodiments of the present invention, thickness range of the first film layer above the wafer is
In preferred embodiments of the present invention, thickness range of second film layer above the wafer is
In preferred embodiments of the present invention, the thickness of the first film layer 2 is selected asThe thickness of second film layer 3 selects
It is selected as
In preferred embodiments of the present invention, above-mentioned first area is rectangular area, and above-mentioned second area is rectangular area.
In preferred embodiments of the present invention, above-mentioned photoresist layer 4 is also covered positioned at above-mentioned first silicon dioxide layer, 2 two sides
The surface of part wafer 1.
In a specific embodiment, the first film layer 2 and the second film layer 3 are silicon dioxide layer.
In another specific embodiment, the first film layer 2 and the second film layer 3 are silicon nitride layer.
In another specific embodiment, the first film layer 2 and the second film layer 3 be may be selected by silica and silicon nitride
Except other materials constitute, still, the material of the first film layer 2 and the second film layer 3 is identical always.
By description and accompanying drawings, the exemplary embodiments of the specific structure of specific embodiment are given, based on present invention essence
Mind can also make other conversions.Although foregoing invention proposes existing preferred embodiment, however, these contents are not intended as
Limitation.
For a person skilled in the art, after reading above description, various changes and modifications undoubtedly be will be evident.
Therefore, appended claims should regard the whole variations and modifications for covering true intention and range of the invention as.It is weighing
The range and content of any and all equivalences, are all considered as still belonging to the intent and scope of the invention within the scope of sharp claim.
Claims (10)
1. a kind of detection method of photoresist adhesion, which is characterized in that the detection method includes:
Step S1, a wafer is provided, presets first area interconnected and second area, Yu Suoshu first on Yu Suoshu wafer
The first film layer is prepared on region, the second film layer is prepared on Yu Suoshu second area, and the thickness of the first film layer is less than
The thickness of second film layer；
Step S2, a photoresist layer is coated on Yu Suoshu wafer, the first film layer described in the photoresist layer covering part is described
The first film layer described in second film layer and another part is not covered by the photoresist layer, the photoresist layer and described first
The film layer place of overlapping has a coinciding edges；
Step S3, using the photoresist layer as the first film layer described in mask etching and second film layer；
Step S4, the situation that is etched at the coinciding edges is corresponded to according to the first film layer and judges the photoresist layer
Adhesion.
2. detection method according to claim 1, which is characterized in that in the step S4, acquire pair after over etching
It answers the first film layer of the coinciding edges to obtain a test sample, the photoresist is judged by the test sample
The adhesion of layer.
3. detection method according to claim 2, which is characterized in that in the step S4, shot using a scanning electron microscope
The test sample corresponds to the coinciding edges to obtain a scanning electron microscope image, by observing in the scanning electron microscope image
The etching situation of the first film layer judges the adhesion of the photoresist layer.
4. detection method according to claim 3, which is characterized in that the specific judgment method of the test sample is as follows:
If in the scanning electron microscope image, described first positioned at the coinciding edges side and below the photoresist is thin
Film layer is etched, then the adhesion of the photoresist is poor；
If in the scanning electron microscope image, described first positioned at the coinciding edges side and below the photoresist is thin
Film layer is not etched, then the adhesion of the photoresist is preferable.
5. detection method according to claim 4, which is characterized in that be located at the coinciding edges side and be located at the light
The adhesion of the area and the photoresist layer of the first film layer being etched below photoresist is inversely proportional.
6. detection method according to claim 1, which is characterized in that the first film layer and second film layer exist
The absolute value range of thickness difference above the wafer is
7. detection method according to claim 6, which is characterized in that thickness of the first film layer above the wafer
Spending range is
8. detection method according to claim 6, which is characterized in that thickness of second film layer above the wafer
Spending range is
9. detection method according to claim 1, which is characterized in that the first film layer and second film layer are
Silica or the first film layer and second film layer are silicon nitride.
10. detection method according to claim 1, which is characterized in that the first area and the second area are square
Shape region.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710444066.3A CN107256836B (en) | 2017-06-13 | 2017-06-13 | A kind of detection method of photoresist adhesion |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710444066.3A CN107256836B (en) | 2017-06-13 | 2017-06-13 | A kind of detection method of photoresist adhesion |
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| Publication Number | Publication Date |
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| CN107256836A CN107256836A (en) | 2017-10-17 |
| CN107256836B true CN107256836B (en) | 2019-09-27 |
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| CN110808215B (en) * | 2019-10-14 | 2022-06-10 | Tcl华星光电技术有限公司 | Method for testing adhesion of photoresist and optical inspection machine |
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| JP2002182398A (en) * | 2000-12-18 | 2002-06-26 | Toyobo Co Ltd | Photosensitive resin laminate and photosensitive resin printing plate using the same |
| JP4027263B2 (en) * | 2003-05-08 | 2007-12-26 | キヤノン株式会社 | Near-field exposure method and apparatus |
| JP4185939B2 (en) * | 2006-03-15 | 2008-11-26 | オムロン株式会社 | UV curable resin state estimation method |
| CN102023477B (en) * | 2009-09-17 | 2013-06-19 | 中芯国际集成电路制造(上海)有限公司 | Photoetching method |
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Address after: 430205 No.18, Gaoxin 4th Road, Donghu Development Zone, Wuhan City, Hubei Province Patentee after: Wuhan Xinxin Integrated Circuit Co.,Ltd. Country or region after: China Address before: 430205 No.18, Gaoxin 4th Road, Donghu Development Zone, Wuhan City, Hubei Province Patentee before: Wuhan Xinxin Semiconductor Manufacturing Co.,Ltd. Country or region before: China |