CN107256741B - A kind of method of solvent evaporation annealing enhancing metal nanometer line transparent conductive film performance - Google Patents

A kind of method of solvent evaporation annealing enhancing metal nanometer line transparent conductive film performance Download PDF

Info

Publication number
CN107256741B
CN107256741B CN201710345105.4A CN201710345105A CN107256741B CN 107256741 B CN107256741 B CN 107256741B CN 201710345105 A CN201710345105 A CN 201710345105A CN 107256741 B CN107256741 B CN 107256741B
Authority
CN
China
Prior art keywords
nanometer line
conductive film
transparent conductive
metal nanometer
solvent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201710345105.4A
Other languages
Chinese (zh)
Other versions
CN107256741A (en
Inventor
章勇
周永田
魏优
钟远聪
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
South China Normal University
Original Assignee
South China Normal University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by South China Normal University filed Critical South China Normal University
Priority to CN201710345105.4A priority Critical patent/CN107256741B/en
Publication of CN107256741A publication Critical patent/CN107256741A/en
Application granted granted Critical
Publication of CN107256741B publication Critical patent/CN107256741B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B13/00Apparatus or processes specially adapted for manufacturing conductors or cables
    • H01B13/0016Apparatus or processes specially adapted for manufacturing conductors or cables for heat treatment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/02Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys

Landscapes

  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Manufacturing Of Electric Cables (AREA)
  • Non-Insulated Conductors (AREA)

Abstract

The invention discloses a kind of methods that solvent evaporates annealing enhancing metal nanometer line transparent conductive film performance.The characteristics of this method is generally soluble in polar solvent using metal nanometer line surface ligand PVP, method for annealing is evaporated by low-boiling alcohols solvent to remove metal nanometer line surface ligand PVP, reduce the contact resistance between metal nanometer line, achievees the purpose that the square resistance for reducing metal nanometer line transparent conductive film.The method of the present invention technical process is simple, at low cost, can evaporate annealing time by adjusting solvent, realize the adjusting between contact resistance size metal nanometer line, realize the regulation to metal nanometer line transparent conductive film square resistance;Treated metal nanometer line transparent conductive film, compares untreated original metal nano wire transparent conductive film, and square resistance reduces 8% ~ 50%.

Description

A kind of method of solvent evaporation annealing enhancing metal nanometer line transparent conductive film performance
Technical field
The present invention relates to the transparent conductive film preparation technical fields of photoelectric device, and in particular to a kind of solvent evaporation annealing Enhance the method for metal nanometer line transparent conductive film performance.
Technical background
With the sustained and rapid development of modern opto-electronics, many aspects of the transparent conductive film in social life in recent years It is applied, and has come into daily life.Transparent conductive film is mainly used in such as FPD, e-book, intelligence The field of photoelectric devices such as energy mobile phone, intelligent glass, touch screen, light emitting diode and solar battery.It is widely used for currently, comparing The material of production transparent conductive film is the metal oxide of doping, such as the indium oxide of tin dope(ITO), aluminium doping zinc oxide (AZO)With the tin oxide of Fluorin doped(FTO)Deng.Although current commercialized ITO, AZO, FTO transparent conductive film has excellent Optically and electrically performance, but the increase with industry to transparent conductive electrode demand the miniaturization of photoelectric device and can wear The appearance of equipment is worn, these three transparent conductive films have been unable to satisfy answering in next-generation consumer electronics and clean energy resource field With.In recent years, it has been developed that some nano-functional materials replace ITO.The representative are:Conducting polymer, carbon Nanotube, graphene and metal nanometer line.In these materials, Typical Representative of the silver nanowires as metal nano material, tool There is the features such as higher conductivity, thermal conductivity, flexibility and solution are processed, it has also become be most hopeful to substitute the electrically conducting transparent electricity of ITO Pole material.The film build method of common metal nanometer line have very much, as spin-coating method, Meyer stick method, spray coating method, vacuum filtration method and Roll-to-rool printing etc., these film build methods rapidly develop the preparation of metallic transparent conductive film and application, But also flexible photoelectric device is possibly realized.
Currently, metal nanometer line using liquid phase low temperature synthetic method can large scale preparation, generally using exhausted in synthesis process The surface ligand polyvinylpyrrolidone (PVP) of edge regulates and controls its size and dispersibility, and excessive PVP end-capping reagent covering can shield The surface charge of nano wire causes the Van der Waals force between nano wire to play a major role, and the bundle shape of nano wire is easy to cause to assemble, Also increase the contact resistance between metal nanometer line simultaneously.Such as:For silver nanowires transparent conductive film, R. M.Mutiso etc. People combines method by numerical simulation and experiment data to analyze effective contact resistance between AgNWs, and discovery exists for diameter 50 ~ 80 nm range AgNWs conductive films, effective contact resistance is in 1.5 ~ 2.5 K Ω(ACS Nano, 7: 7654 (2013)).In order to reduce the contact resistance between AgNWs, it is necessary to introduce some post-processing technologies, California, USA university Los Angeles point The Yang Yang in school(ACS Nano, 5: 9877(2011))With the Jooho Moon of Univ Yonsei Seoul of South Korea(ACS Nano, 7: 1081(2013))Equal seminars use oxide nano-particles, as TiO2, ZnO come as node fusion agent or surface capping agents Improve the contact between AgNWs node.In addition, there are also researchers to use nano-weld technology(Nat. Mater., 11: 241 (2012))Deng node loose between nano wire is welded, its electric conductivity is increased.But these processing methods generally all mistake Journey is complicated or at high cost.
Usual PVP layers of metal nanometer line surface ligand is by weak Van der Waals for beam with its metal nanometer line surface It is tied together, part PVP is generally removed by polar solvent repeated washing and centrifugation, and remove excessive PVP and will lead to AgNWs Difficulties in dispersion is unfavorable for solution processing and prepares transparent conductive film.
Summary of the invention
In view of the deficiencies of the prior art, the present invention provides a kind of solvents to evaporate annealing enhancing metal nanometer line electrically conducting transparent The method of film performance.The characteristics of this method is generally soluble in polar solvent using metal nanometer line surface ligand PVP, by low The alcohols solvent of boiling point evaporates method for annealing to remove metal nanometer line surface ligand PVP, reduces the contact between metal nanometer line Resistance achievees the purpose that the square resistance for reducing metal nanometer line transparent conductive film.
The present invention is achieved through the following technical solutions.
A kind of method of solvent evaporation annealing enhancing metal nanometer line transparent conductive film performance, includes the following steps:
(1)Metal nanometer line dispersion liquid is prepared into metal nanowire thin-films by solution processing method on substrate, then Heat treatment removal residual solvent, obtains metal nanometer line transparent conductive film;
(2)Obtained metal nanometer line transparent conductive film is placed in closed container, low-boiling alcohols solvent is added, Metal nanometer line transparent conductive film is not directly contacted with low-boiling alcohols solvent, carries out solvent evaporation in-situ annealing processing;
Solvent evaporates in in-situ annealing treatment process, and low-boiling alcohols solvent evaporation is formed on metal nanometer line surface Drop is partly dissolved the surface ligand PVP of metal nanometer line and is detached from PVP from metal nanometer line surface, realizes and reduce metal Contact resistance between nano wire reduces the purpose of the square resistance of metal nanometer line transparent conductive film;
(3)After solvent evaporation annealing, metal nanometer line transparent conductive film is taken out, is placed in thermal station at heating Reason removes residual solvent, obtains the metal nanometer line transparent conductive film of performance enhancement.
Further, step(1)In, the metal nanometer line includes that nanowires of gold, silver nanowires, copper nano-wire or nickel are received Rice noodles.
Further, step(1)In, the mass fraction 0.01% ~ 3% of the metal nanometer line dispersion liquid, dispersion liquid it is molten Agent includes methanol, ethyl alcohol or isopropanol.
Further, step(1)In, the solution processing method includes spin-coating method, spray coating method, self assembly czochralski method, steps Stick method or vacuum filtration method.
Further, step(1)In, the substrate is transparent substrates, including glass substrate, polyethylene terephthalate Rouge substrate, polyimide substrate, dimethyl silicone polymer substrate, polymethyl methacrylate substrate or polycarbonate substrate.
Further, step(1)In, the heat treatment is 10 ~ 20min of heating at 80 ~ 100 DEG C.
Further, step(2)In, the low-boiling alcohols solvent includes methanol, ethyl alcohol or isopropanol etc..
Further, step(2)In, the additive amount of the low-boiling alcohols solvent is the amount of metal nanometer line dispersion liquid 10% ~ 20%.
Further, step(2)In, the solvent evaporation in-situ annealing processing is after low-boiling alcohols solvent will be added Closed container be placed in room temperature environment and place 1 ~ 3 hour.
Further, step(3)In, the heat treatment is in 70 ~ 100 DEG C of 10 ~ 30min of heating.
Further, finally obtained metal nanometer line transparent conductive film compares untreated original metal nanometer Line transparent conductive film, square resistance reduce 8% ~ 50%.
Compared with prior art, the invention has the advantages that and beneficial effect:
(1)The method of the present invention has the advantages that technical process is simple, at low cost;
(2)The present invention can evaporate annealing time by adjusting solvent, realize between contact resistance size metal nanometer line It adjusts, realizes the regulation to metal nanometer line transparent conductive film square resistance;
(3)The method of the present invention treated metal nanometer line transparent conductive film, receives compared to untreated original metal Rice noodles transparent conductive film, square resistance reduce 8% ~ 50%.
Detailed description of the invention
Fig. 1 a is the high contact resistance between the surface ligand PVP and its silver nanowires of the AgNWs used in specific embodiment Schematic diagram;
Fig. 1 b is the low contact resistance between the surface ligand PVP and its silver nanowires of the AgNWs used in specific embodiment Schematic diagram;
Fig. 2 is AgNWs solvent anneal schematic diagram in embodiment 1;
Fig. 3 a and Fig. 3 b are the surface ligand PVP in embodiment 1 before solvent evaporation annealing with AgNWs after solvent evaporation annealing TEM figure.
Specific embodiment
To evaporate solvent of the present invention annealing enhancing metal nanometer line electrically conducting transparent below in conjunction with specific embodiment Film performance and preparation method thereof is described in further detail.But protection scope of the presently claimed invention is not limited to embodiment Related range.
Solvent evaporation annealing technology of the present invention is existed using low boiling points alcohols solvents such as methanol, ethyl alcohol or isopropanols It volatilizees in closed container, then dissolves the surface ligand PVP of metal nanometer line at droplet in metal nanometer line surface aggregation, Cause PVP ligand to be detached to reduce the contact resistance between metal nanometer line from metal nanometer line surface, realizes that reducing metal receives The purpose of rice noodles transparent membrane square resistance.
The silver nanowires used in the specific embodiment of the invention(AgNWs)Surface ligand PVP and its silver nanowires between High and low contact resistance schematic diagram is shown as illustrated in figs. 1A and ib respectively, as can be seen from figs. 1a and 1b, the surface ligand of AgNWs When PVP layers thicker, the contact resistance between silver nanowires is larger;PVP layers of surface ligand of AgNWs it is relatively thin when, between silver nanowires Contact resistance is low.
Embodiment 1
A kind of method of solvent evaporation annealing enhancing metal nanometer line transparent conductive film performance, includes the following steps:
(1)It uses isopropanol for solvent, silver nanowires is made into the silver nanowires solution that mass fraction is 1%, silver nanowires Partial size length be 10 ~ 50 μm, diameter is 20 ~ 80 nm, and after being shaken up with shaking table, be filtered by vacuum, obtained with miillpore filter To dispersion liquid evenly dispersed and without the silver nanowires isopropanol obviously reunited;
(2)Cleaning is successively followed the steps below to glass substrate:Washing lotion ultrasound 10 minutes, acetone ultrasound 10 minutes, go from It is sub- water ultrasound 10 minutes, isopropanol ultrasound 10 minutes, stand-by after drying;
(3)The dispersion liquid of silver nanowires isopropanol is then spin-coated on glass lined by glass progress oxygen plasma cleaning On bottom, spin coating revolving speed is 2500 r/min, and spin-coating time is 60 s, thin in the silver nanowires that glass substrate surface covers 120 nm Film heats 15 minutes for 80 DEG C in thermal station, obtains silver nanowires transparent conductive film;
(4)Prepared silver nanowires transparent conductive film is placed in closed container, it is molten that methanol is added dropwise in a reservoir Agent(Dispersion liquid spin coating amount relative to silver nanowires isopropanol is 10%), silver nanowires transparent conductive film and methanol is not direct Contact, then closes the lid;It is placed 3 hours under room temperature environment, so that methanol solvate is carried out solvent evaporation annealing, partially go Except the surface ligand PVP of silver nanowires;Methanol solvate evaporation annealing schematic diagram it is as shown in Figure 2, metal nanowire thin-films as Low-boiling alcohols solvent is added in bottom in closed container, while in container, evaporates to form gas to alcohols solvent;Metal After nano wire film stands 3 hours in the steam of alcohols solvent, i.e. expression solvent evaporation annealing;
(5)After solvent evaporation annealing, silver nanowires transparent conductive film is taken out, is placed in thermal station at heating Reason places 80 DEG C of heating in thermal station and removes remaining methanol solvate in 30 minutes, obtains the silver nanowires electrically conducting transparent of performance enhancement Film.
Fig. 3 a and Fig. 3 b are respectively that the surface of the silver nanowires before carrying out methanol solvate evaporation annealing and gone out after managing is matched The TEM of body PVP schemes, after will become apparent from methanol solvate evaporation annealing from TEM test result, the surface ligand of silver nanowires It is transparent to be finally substantially reduced silver nanowires so that the contact resistance between making silver nanowires reduces for the removal effect highly significant of PVP The square resistance of conductive film;Initial light transmittance of the silver nanowires transparent conductive film at 550 nm is 90 %, by methanol Solvent evaporation annealing can make its square resistance be reduced to 24.7 Ω/ from 44.1 Ω/, in addition, molten after 3 hours Agent evaporation annealing technology does not influence the light transmittance of silver nanowires transparent conductive film.
Embodiment 2
A kind of method of solvent evaporation annealing enhancing metal nanometer line transparent conductive film performance, includes the following steps:
(1)It uses ethyl alcohol for solvent, silver nanowires is made into the silver nanowires solution that mass fraction is 0.01%, silver nanoparticle The partial size length of line is 10 ~ 50 μm, diameter is 20 ~ 80 nm, and after being shaken up with shaking table, is filtered by vacuum with miillpore filter, Obtain dispersion liquid evenly dispersed and without the silver nanowires ethyl alcohol obviously reunited;
(2)Cleaning is successively followed the steps below to glass substrate:Washing lotion ultrasound 10 minutes, acetone ultrasound 10 minutes, go from It is sub- water ultrasound 10 minutes, isopropanol ultrasound 10 minutes, stand-by after drying;
(3)The dispersion liquid of silver nanowires ethyl alcohol is then spin-coated on glass substrate by glass progress oxygen plasma cleaning On, spin coating revolving speed is 2500 r/min, and spin-coating time is 60 s, thin in the silver nanowires that glass substrate surface covers 120 nm Film heats 8 minutes for 100 DEG C in thermal station, obtains silver nanowires transparent conductive film;
(4)Prepared silver nanowires transparent conductive film is placed in closed container, it is molten that methanol is added dropwise in a reservoir Agent(Dispersion liquid spin coating amount relative to silver nanowires isopropanol is 15%), silver nanowires transparent conductive film and methanol is not direct Contact, then closes the lid;It is placed 1 hour under room temperature environment, so that methanol solvate is carried out solvent evaporation annealing, partially go Except the surface ligand PVP of silver nanowires;Methanol solvate evaporation annealing schematic diagram it is as shown in Figure 2, metal nanowire thin-films as Low-boiling alcohols solvent is added in bottom in closed container, while in container, evaporates to form gas to alcohols solvent;Metal After nano wire film stands 1 hour in the steam of alcohols solvent, i.e. expression solvent evaporation annealing;
(5)After solvent evaporation annealing, silver nanowires transparent conductive film is taken out, is placed in thermal station at heating Reason places 70 DEG C of heating in thermal station and removes remaining methanol solvate in 25 minutes, obtains the silver nanowires electrically conducting transparent of performance enhancement Film.
After methanol solvate evaporation annealing, the removal effect highly significant of the surface ligand PVP of silver nanowires, to make Contact resistance between silver nanowires reduces, and is finally substantially reduced the square resistance of silver nanowires transparent conductive film;Initial silver is received Light transmittance of the rice noodles transparent conductive film at 550 nm is 86 %, can be with after methanol solvate evaporation annealing 1 hour Its square resistance is set to be reduced to 37.6 Ω/ from 42.3 Ω/, in addition, solvent evaporates annealing technology to silver nanowires The light transmittance of transparent conductive film does not influence.
Embodiment 3
A kind of method of solvent evaporation annealing enhancing metal nanometer line transparent conductive film performance, includes the following steps:
(1)It uses methanol for solvent, silver nanowires is made into the silver nanowires solution that mass fraction is 3%, silver nanowires Partial size length is 10 ~ 50 μm, diameter is 20 ~ 80 nm, and after being shaken up with shaking table, is filtered by vacuum, is obtained with miillpore filter Dispersion liquid evenly dispersed and without the silver nanowires methanol obviously reunited;
(2)Cleaning is successively followed the steps below to glass substrate:Washing lotion ultrasound 10 minutes, acetone ultrasound 10 minutes, go from It is sub- water ultrasound 10 minutes, isopropanol ultrasound 10 minutes, stand-by after drying;
(3)The dispersion liquid of silver nanowires methanol is then spin-coated on glass substrate by glass progress oxygen plasma cleaning On, spin coating revolving speed is 2500 r/min, and spin-coating time is 60 s, thin in the silver nanowires that glass substrate surface covers 120 nm Film heats 20 minutes for 85 DEG C in thermal station, obtains silver nanowires transparent conductive film;
(4)Prepared silver nanowires transparent conductive film is placed in closed container, it is molten that methanol is added dropwise in a reservoir Agent(Dispersion liquid spin coating amount relative to silver nanowires isopropanol is 20%), silver nanowires transparent conductive film and methanol is not direct Contact, then closes the lid;It is placed 2 hours under room temperature environment, so that methanol solvate is carried out solvent evaporation annealing, partially go Except the surface ligand PVP of silver nanowires;Methanol solvate evaporation annealing schematic diagram it is as shown in Figure 2, metal nanowire thin-films as Low-boiling alcohols solvent is added in bottom in closed container, while in container, evaporates to form gas to alcohols solvent;Metal After nano wire film stands 2 hours in the steam of alcohols solvent, i.e. expression solvent evaporation annealing;
(5)After solvent evaporation annealing, silver nanowires transparent conductive film is taken out, is placed in thermal station at heating Reason places 100 DEG C of heating in thermal station and removes remaining methanol solvate in 10 minutes, obtains the silver nanowires electrically conducting transparent of performance enhancement Film.
After methanol solvate evaporation annealing, the removal effect highly significant of the surface ligand PVP of silver nanowires, to make Contact resistance between silver nanowires reduces, and is finally substantially reduced the square resistance of silver nanowires transparent conductive film;Initial silver is received Light transmittance of the rice noodles transparent conductive film at 550 nm is 92 %, can be with after methanol solvate evaporation annealing 2 hours Its square resistance is set to be reduced to 23.7 5 Ω/ from 43.5 Ω/, in addition, solvent evaporates annealing technology to silver nanowires The light transmittance of transparent conductive film does not influence.

Claims (8)

1. a kind of method of solvent evaporation annealing enhancing metal nanometer line transparent conductive film performance, which is characterized in that including such as Lower step:
(1)Metal nanometer line dispersion liquid is prepared into metal nanowire thin-films by solution processing method on substrate, then at heat Reason removal residual solvent, obtains metal nanometer line transparent conductive film;The solution processing method include spin-coating method, spray coating method, Self assembly czochralski method, Meyer stick method or vacuum filtration method;
(2)Obtained metal nanometer line transparent conductive film is placed in closed container, low-boiling alcohols solvent, metal is added Nano wire transparent conductive film is not directly contacted with low-boiling alcohols solvent, carries out solvent evaporation in-situ annealing processing;It is described Solvent evaporation in-situ annealing processing is the closed container after low-boiling alcohols solvent will be added to be placed in room temperature environment to place 1 ~ 3 Hour;
(3)Solvent evaporates in-situ annealing after treatment, takes out metal nanometer line transparent conductive film, is placed in thermal station at heating Reason removes residual solvent, obtains the metal nanometer line transparent conductive film of performance enhancement.
2. a kind of side of solvent evaporation annealing enhancing metal nanometer line transparent conductive film performance according to claim 1 Method, which is characterized in that step(1)In, the metal nanometer line includes nanowires of gold, silver nanowires, copper nano-wire or nickel nanometer Line;The mass fraction 0.01% ~ 3% of the metal nanometer line dispersion liquid, the solvent of dispersion liquid include methanol, ethyl alcohol or isopropanol.
3. a kind of side of solvent evaporation annealing enhancing metal nanometer line transparent conductive film performance according to claim 1 Method, which is characterized in that step(1)In, the substrate is transparent substrates, including glass substrate, polyethylene terephthalate Substrate, polyimide substrate, dimethyl silicone polymer substrate, polymethyl methacrylate substrate or polycarbonate substrate.
4. a kind of side of solvent evaporation annealing enhancing metal nanometer line transparent conductive film performance according to claim 1 Method, which is characterized in that step(1)In, the heat treatment is 8 ~ 20min of heating at 80 DEG C ~ 100 DEG C.
5. a kind of side of solvent evaporation annealing enhancing metal nanometer line transparent conductive film performance according to claim 1 Method, which is characterized in that step(2)In, the low-boiling alcohols solvent includes methanol, ethyl alcohol or isopropanol.
6. a kind of side of solvent evaporation annealing enhancing metal nanometer line transparent conductive film performance according to claim 1 Method, which is characterized in that step(2)In, the additive amount of the low-boiling alcohols solvent is the amount of metal nanometer line dispersion liquid 10%~20%。
7. a kind of side of solvent evaporation annealing enhancing metal nanometer line transparent conductive film performance according to claim 1 Method, which is characterized in that step(3)In, the heat treatment is in 70 ~ 100 DEG C of 10 ~ 30min of heating.
8. a kind of side of solvent evaporation annealing enhancing metal nanometer line transparent conductive film performance according to claim 1 Method, which is characterized in that finally obtained metal nanometer line transparent conductive film, it is saturating compared to untreated original metal nano wire Bright conductive film, square resistance reduce 8% ~ 50%.
CN201710345105.4A 2017-05-16 2017-05-16 A kind of method of solvent evaporation annealing enhancing metal nanometer line transparent conductive film performance Active CN107256741B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201710345105.4A CN107256741B (en) 2017-05-16 2017-05-16 A kind of method of solvent evaporation annealing enhancing metal nanometer line transparent conductive film performance

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201710345105.4A CN107256741B (en) 2017-05-16 2017-05-16 A kind of method of solvent evaporation annealing enhancing metal nanometer line transparent conductive film performance

Publications (2)

Publication Number Publication Date
CN107256741A CN107256741A (en) 2017-10-17
CN107256741B true CN107256741B (en) 2018-11-27

Family

ID=60027260

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201710345105.4A Active CN107256741B (en) 2017-05-16 2017-05-16 A kind of method of solvent evaporation annealing enhancing metal nanometer line transparent conductive film performance

Country Status (1)

Country Link
CN (1) CN107256741B (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113292253A (en) * 2020-07-28 2021-08-24 虞晖 Preparation process of high-infrared-reflection coated glass
CN113801351A (en) * 2021-11-08 2021-12-17 杭州师范大学 Simple process for preparing high-transparency flexible electromagnetic shielding film
CN114843035B (en) * 2022-05-23 2024-06-21 中国人民解放军国防科技大学 Curved surface crack template preparation method based on reverse pulling method and metal grid conductive film preparation method
CN115995311B (en) * 2023-03-21 2023-05-23 浙江大华技术股份有限公司 Silver nanowire transparent conductive film and preparation method and application thereof

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104616837A (en) * 2015-02-02 2015-05-13 华南师范大学 Plane ordered metal nanowire superposed transparent conducting thin film and preparation method thereof
CN105261705A (en) * 2015-11-17 2016-01-20 武汉理工大学 Preparation method of organic solar cell
CN105788756A (en) * 2016-01-08 2016-07-20 浙江大学 Transparent metal conducting film and preparation method thereof
JP6053246B1 (en) * 2015-07-30 2016-12-27 バンドー化学株式会社 Electrode manufacturing method

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104616837A (en) * 2015-02-02 2015-05-13 华南师范大学 Plane ordered metal nanowire superposed transparent conducting thin film and preparation method thereof
JP6053246B1 (en) * 2015-07-30 2016-12-27 バンドー化学株式会社 Electrode manufacturing method
CN105261705A (en) * 2015-11-17 2016-01-20 武汉理工大学 Preparation method of organic solar cell
CN105788756A (en) * 2016-01-08 2016-07-20 浙江大学 Transparent metal conducting film and preparation method thereof

Also Published As

Publication number Publication date
CN107256741A (en) 2017-10-17

Similar Documents

Publication Publication Date Title
CN107256741B (en) A kind of method of solvent evaporation annealing enhancing metal nanometer line transparent conductive film performance
Yu et al. All-solution-processed molybdenum oxide-encapsulated silver nanowire flexible transparent conductors with improved conductivity and adhesion
Liu et al. Rapid atmospheric pressure plasma jet processed reduced graphene oxide counter electrodes for dye-sensitized solar cells
Liu et al. Highly transparent and flexible all-solid-state supercapacitors based on ultralong silver nanowire conductive networks
Xu et al. Graphene as transparent electrodes: fabrication and new emerging applications
Hao et al. Stretchable electrochromic devices based on embedded WO3@ AgNW Core-Shell nanowire elastic conductors
Yang et al. Composite counter electrode based on nanoparticulate PbS and carbon black: towards quantum dot-sensitized solar cells with both high efficiency and stability
CN107655598A (en) Flexibility stress sensor based on CNT and nano silver wire composite conductive thin film
Thomalla et al. Photosensitization of nanostructured TiO2 with WS2 quantum sheets
Wang et al. Chemical and thermal robust tri-layer rGO/Ag NWs/GO composite film for wearable heaters
CN104009159B (en) Perovskite-based thin film solar cell and preparation method thereof
CN103545053B (en) The preparation method of transparent conductive film and there is the preparation method of CF substrate of this conductive film
Kathirvel et al. Morphological control of TiO2 nanocrystals by solvothermal synthesis for dye-sensitized solar cell applications
Huang et al. Symmetric transparent and flexible supercapacitor based on bio-inspired graphene-wrapped Fe2O3 nanowire networks
CN104593802B (en) The electrochemical preparation method of graphene
CN103236324A (en) Method for preparing reduced graphene oxide-based flexible transparent conductive thin film
CN108076591B (en) The preparation method and preparation facilities of a kind of flexible circuit or electrode
CN103746077A (en) Organic-inorganic composite solar cell and manufacturing method thereof
CN109103023A (en) A kind of Sb- stannic oxide-AgNWs/CBS-GNs flexible thin-film solar cell and preparation method thereof
CN103021668A (en) Semiconductor nanocrystalline sensitized solar cell and preparation method thereof
Aitola et al. Highly catalytic carbon nanotube counter electrode on plastic for dye solar cells utilizing cobalt-based redox mediator
Wang et al. Improved performance of dye-sensitized solar cells with patterned fluorine-doped tin oxide electrodes
Sudhagar et al. Efficient performance of electrostatic spray-deposited TiO 2 blocking layers in dye-sensitized solar cells after swift heavy ion beam irradiation
Bai et al. Preparation of smooth, flexible and stable silver nanowires-polyurethane composite transparent conductive films by transfer method
Ferry et al. Graphene and Graphene Derived Nanomaterials as Versatile Candidates for Organic Solar Cells and Smart Windows Applications–A Review

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant