CN107252891A - The method that two-step sintering nanometer silver paste prepares microelectronic interconnection material - Google Patents
The method that two-step sintering nanometer silver paste prepares microelectronic interconnection material Download PDFInfo
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- CN107252891A CN107252891A CN201710316263.7A CN201710316263A CN107252891A CN 107252891 A CN107252891 A CN 107252891A CN 201710316263 A CN201710316263 A CN 201710316263A CN 107252891 A CN107252891 A CN 107252891A
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- silver paste
- nanometer silver
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/10—Sintering only
- B22F3/1017—Multiple heating or additional steps
Abstract
The invention discloses a kind of method that two-step sintering nanometer silver paste prepares microelectronic interconnection material, two kinds of mode of heatings of heating furnace and warm table are combined, both ensured to need the oxygen atmosphere of abundance to decompose the organic components in nanometer silver paste in nanometer silver paste sintering process, make sintering more thorough, combined between nano-Ag particles even closer, nanometer silver paste upper and lower surface and internal uneven shortcoming of being heated in nanometer silver paste sintering process are improved again, so that nanometer silver paste sintering quality is improved, thermal conductivity and mechanical performance after nanometer silver paste sintering can be improved using this low-temperature mixed heat-agglomerating method, voidage after reduction nanometer silver paste is sintered to a certain extent, improve the heat transfer efficiency of microelectronic interconnection material, improve the quality of the sinter molding microelectronic interconnection material of nanometer silver paste, with important industrial value.
Description
Technical field
The present invention relates to a kind of law temperature joining technical matters, more particularly to a kind of low sintering method of nanometer silver paste and
For the unleaded preparation technology of microelectronic interconnection material, applied to microelectronic interconnection field of material technology.
Background technology
Sintering temperature is low, conductance is high, thermal conductivity is high, adhesive strength is high, steady performance because having for nanometer silver paste,
Turn into one of focus direction of international research.Law temperature joining technology (LTJT, Low based on nanometer silver paste thermal sintering
Temperature Joining Technique), it is a kind of substitute technology unleaded for chip interconnection materials, is current
One of most promising electronic package interconnections technology, is the development trend of following interconnection material, in Aeronautics and Astronautics, force in the world
Many high-technology fields such as device, microelectronics have important application value.At present, sintered and led based on nanometer silver paste low-temperature heat
There are following methods：
First, sintering under conditions of pressure is applied in the external world, mode of heating is sintering in heating furnace, by setting heating curves
To change nanometer silver paste sintering process, it is difficult that this extraneous method for applying pressure is applied in interconnection material in nanometer silver paste
To implement.
2nd, under conditions of without pressure, nanometer silver paste is directly placed on warm table and sintered, this method can cause nanometer
The heated inequality in top and bottom in silver paste sintering process, and heating rate in sintering process can not be adjusted, to research nanometer silver paste sintering
Technique is had any problem.
3rd, under conditions of without pressure, the heat-agglomerating in heating furnace, this method is closed due to heating furnace, and space is small, stove
Middle oxygen is not enough, causes sintering not thorough, electric conductivity and mechanical performance after influence nanometer silver paste sintering.
The content of the invention
In order to solve prior art problem, it is an object of the present invention to overcome the deficiencies of the prior art, and to provide one kind
The method that two-step sintering nanometer silver paste prepares microelectronic interconnection material, it is possible to increase the microelectronic interconnection material prepared after sintering
Mechanical strength, reduces the voidage after nanometer silver paste sintering, improves the heat transfer efficiency of microelectronic interconnection material to a certain extent,
Ensure that needs the oxygen of abundance to decompose the organic principle in nanometer silver paste in nanometer silver paste sintering process, make sintering more thorough
Bottom, improves the heated uneven shortcoming of nanometer silver paste in single sintering process, so as to improve the sinter molding of nanometer silver paste again
The quality of microelectronic interconnection material, with important industrial value.
To reach above-mentioned purpose, the present invention is adopted the following technical scheme that：
A kind of method that two-step sintering nanometer silver paste prepares microelectronic interconnection material, comprises the following steps：
A. it is main uniformly to be mixed using nano-silver powder and organic solvent, prepare nanometer silver paste mixture system；It is preferred that
The average grain diameter of nano-silver powder is 20~30nm, and preferably nano-silver powder purity is not less than 99.9%；It is used as currently preferred skill
Art scheme, when preparing nanometer silver paste mixture system, using dispersant, diluent, organic carrier, organic solvent and Nano Silver
Powder is through mechanical agitation 15-30min and ultrasound 20-30min, and the water temperature in Ultrasound Instrument is no more than 30 DEG C, is sufficiently mixed, obtained
Nanometer silver paste mixture system；As currently preferred technical scheme, diluent uses terpinol, and molecular formula is C10H18O,
Boiling point is 214-224 DEG C；Dispersant uses anhydrous citric acid sodium, and purity is 98%；Organic carrier uses polyvinyl butyral resin；
B. the obtained nanometer silver paste mixture system prepared in the step a is subjected to heating in vacuum drying, removed
Organic solvent, obtains the nanometer silver paste with setting silver mass fraction and setting viscosity；As currently preferred technical scheme,
Ag mass contents are 82%-90% in nanometer silver paste after drying, and the viscosity of nanometer silver paste (3) is 18-25Pas after drying；Adopt
With vacuum evaporation method, remove organic solvent using Rotary Evaporators under vacuum conditions, obtain required nanometer silver paste；
C. the nanometer silver paste prepared in the step b is uniformly coated on by copper base as substrate using copper base
On, Nano Silver serous coat is formed on copper base, chip is covered on the position for scribbling nanometer silver paste, and compress copper base and core
Piece, makes chip and copper base combine closely；As currently preferred technical scheme, the matrix material of copper base is copper, in copper
Matrix surface is coated with that thickness is not more than 6 μm of nickel dam and thickness is not more than 3 μm of silver layer successively, forms the copper with boundary material
Substrate；
D. the copper base prepared in the step c is put into heating furnace together with the assembly to be sintered that chip is formed
Row first time low-temperature sintering, it is 25-60min to control sintering time, and controls sintering temperature to be 240-280 DEG C, obtains preliminary sample
Product；As currently preferred technical scheme, when carrying out first time low-temperature sintering, heating furnace power supply is opened, heat-agglomerating is set
Curve, the copper base prepared in the step c is put into heating furnace together with the assembly to be sintered that chip is formed, and is closed and is added
Hot furnace chamber's door, starts first time low-temperature sintering；When carrying out first time low-temperature sintering, preferably heating furnace sets heat-agglomerating curve
For：240-280 DEG C of sintering temperature is heated to from room temperature, is protected after elapsed-time standards is 10-30min, then at 280 DEG C of sintering temperature
Warm 15-30min, then cools to room temperature with the furnace, obtains preliminary sample；
E. the preliminary sample in the step d after completion first time low-temperature sintering is placed on warm table and heated,
Proceed second of low-temperature sintering, it is 5-10min to control sintering time, and control sintering temperature to be 250-280 DEG C, in two steps
After heat-agglomerating process terminates, copper base is removed, the hot boundary of Nano Silver with setting heat conduction interconnection structure is finally obtained in chip
Facestock material.As a kind of preferred technical scheme of the present invention, heated up after first setting-out, be specially：Carry out second of low-temperature sintering
When, complete after first time low-temperature sintering, taken out the preliminary sample after sintering in the step d with tweezers, then will be preliminary
Sample is placed on warm table middle position, is covered preliminary sample with cloche, and leaves the gas being sized for preliminary sample
Mouthful, warm table power supply is then opened, starts second of low-temperature sintering.It is first as another preferred technical scheme of the present invention
Setting-out after heating, when carrying out second of low-temperature sintering, connects warm table power supply, and it is 250-280 DEG C to set warm table target temperature,
Placed when warm table rises to target temperature, then by preliminary sample on warm table, the heat time is 5-10min.
As currently preferred technical scheme, using the printed panel with setting through hole distribution form, Nano Silver is used as
The template of serous coat patterning, printed panel is aligned with copper base, and copper base is cleaned by ultrasonic using acetone in advance, then clear with ethanol
Dried after washing, the nanometer silver paste coating prepared in the step b is gone out with iron bale-out and is brushed repeatedly on the printed board, then with scraper plate
At least 1 time, it is ensured that nanometer silver paste smears uniform, form the Nano Silver serous coat of patterning on copper base, then with tweezers by chip
Be covered in scribble patterning nanometer silver paste position on, and compress copper base, printed panel and chip formation layered combinations thereof device,
Copper base, printed panel and chip is combined closely, form assembly to be sintered, it is standby；In the step e, in two-step heating
After sintering process terminates, copper base and printed panel are removed, the Nano Silver with setting heat conduction interconnection structure is finally obtained in chip
Thermal interfacial material.
The present invention compared with prior art, substantive distinguishing features and remarkable advantage is obviously protruded with following：
1. the present invention is using the two-step sintering technique of nanometer silver paste, the technique is by two kinds of mode of heatings of heating furnace and warm table
Combine, both ensured to need the oxygen atmosphere of abundance in nanometer silver paste sintering process decompose the organic matter in nanometer silver paste into
Point, make sintering more thorough, with reference to even closer between nano-Ag particles, nanometer silver paste in nanometer silver paste sintering process is improved again
Upper and lower surface and internal uneven shortcoming of being heated, so that nanometer silver paste sintering quality is improved, are heated using this low-temperature mixed
Sintering method can improve the thermal conductivity and mechanical performance after nanometer silver paste sintering；
2. the inventive method has the raising of increasing to the heat conduction after nanometer silver paste sintering, conductive and mechanical performance, this is right
Nanometer silver paste has very big application value as microelectronic interconnection material.
Brief description of the drawings
Fig. 1 is the technological principle that the embodiment of the present invention one carries out assembling copper base, printed panel, chip and coated with nano silver paste
Figure.
Fig. 2 is the preparation technology flow chart that the embodiment of the present invention one prepares nanometer silver paste.
Fig. 3 is the structural representation of the copper base that the embodiment of the present invention one is used or chip.
Fig. 4 is the structural representation for the printed panel that the embodiment of the present invention one is used.
Fig. 5 is that the microelectronic interconnection material sample that the embodiment of the present invention one prepares shaping using two-step sintering nanometer silver paste shows
It is intended to.
Embodiment
Details are as follows for the preferred embodiments of the present invention：
Embodiment one：
In the present embodiment, referring to Fig. 1~5, a kind of method that two-step sintering nanometer silver paste prepares microelectronic interconnection material,
Comprise the following steps：
A. molecular formula is used for C as organic solvent using ethanol10H18O's and boiling point is 214-224 DEG C of terpinol
As diluent, use purity for 98% anhydrous citric acid sodium as dispersant, using polyvinyl butyral resin as organic
Carrier, measures 50ml ethanol, is heated to 60 DEG C, then weighs sodium citrate 0.045g, polyvinyl butyral resin using balance
0.5g, terpinol 0.355g, then sodium citrate, polyvinyl butyral resin and terpinol are slowly added in ethanol solution successively,
And mechanical agitation 10min, treat that ethanol solution is cooled down to room temperature, add 4.1g purity for 99.9% and average Argent grain grain
Footpath is 20nm properties of Ag nanoparticles prepared by flow-levitation method, then mechanical agitation 20min, and the beaker that will be equipped with Nano Silver mixture system is put into Ultrasound Instrument
Water temperature in ultrasonic 20min, control Ultrasound Instrument is no more than 30 DEG C, during which controls water temperature stability in ultrasound, nano-silver powder and organic
Solvent carries out full and uniform mixing, dispersed nanometer silver paste mixture system is prepared, referring to Fig. 2；
B. vacuum evaporation method is used, carries out being evaporated technique under vacuum conditions using Rotary Evaporators, will be in the step
The obtained nanometer silver paste mixture system prepared in rapid a carries out heating in vacuum drying, removes organic solvent and water, is had
The nanometer silver paste (3) that the viscosity that Ag mass percentage contents are 82% is 18Pas, i.e., in vacuum environment take out ethanol and
Water, the nanometer silver paste (3) after being dried；
C. using copper base (1) as substrate, referring to Fig. 1 and Fig. 3, using the print with setting through hole (5) distribution form
Brush board (2), as the template of nanometer silver paste film figure, referring to Fig. 1 and Fig. 4, printed panel (2) is aligned with copper base (1), copper
Substrate (1) is cleaned by ultrasonic using acetone in advance, is dried after then being cleaned with ethanol, is taken out with iron spoon from beaker in the step
The nanometer silver paste (3) prepared in b is coated on pre-prepd printed panel (2), then is brushed repeatedly 2 times with scraper plate, it is ensured that nanometer
Silver paste (3) is smeared uniform on copper base (1), it is ensured that nanometer silver paste 3 and copper base 1 are in close contact, and is formed on copper base (1)
The Nano Silver serous coat of patterning, then be covered in chip (4) on the position for scribbling patterning nanometer silver paste (3) with tweezers, and press
The layered combinations thereof device of tight copper base (1), printed panel (2) and chip (4) formation, makes copper base (1), printed panel (2) and chip
(4) combine closely, form assembly to be sintered, it is standby；
D. open heating furnace power supply, set heat-agglomerating curve, by the copper base (1) prepared in the step c together with
The assembly to be sintered of chip (4) formation is put into heating furnace, is closed heated oven chamber's door, is started first time low-temperature sintering, carries out
During first time low-temperature sintering, heating furnace setting heat-agglomerating curve is：240 DEG C of sintering temperature is heated to from room temperature, through lasting
Between be 30min after, then at 280 DEG C of sintering temperature be incubated 30min, then cool to room temperature with the furnace, obtain preliminary sample；
E. complete after first time low-temperature sintering, taken out the preliminary sample after sintering with tweezers, then in the step d
Preliminary sample is placed on warm table middle position, preliminary sample is covered with cloche, and setting is left greatly for preliminary sample
Small gas port, then opens warm table power supply, starts second of low-temperature sintering, and it is 5min to control sintering time, and controls sintering
Temperature is 280 DEG C, after two-step heating sintering process terminates, and removes copper base (1) and printed panel (2), is finally obtained in chip (4)
To the Nano Silver thermal interfacial material with setting heat conduction interconnection structure (6), referring to Fig. 5.
Referring to Fig. 1~5, the present embodiment prepares a certain amount of nanometer first using the method for the two-step sintering of nanometer silver paste
Silver paste 3；Then nanometer silver paste 3 is subjected to heating in vacuum drying；The nanometer silver paste after drying is equably applied to copper base 1 again
On, chip 4 is covered in position and the compression for scribbling nanometer silver paste 3, chip 4 is combined closely with copper base 1；Then will be copper-based
Plate 1 is put into heating furnace together with chip 4 and sintered；Sample after sintering is continued again to be placed on warm table sintering, two are finally obtained
Walk the nanometer silver paste interconnection structure of sintering.The present embodiment uses two-step sintering method, it is possible to increase the chip prepared after sintering is mutual
Even the mechanical strength of material, reduces the voidage after nanometer silver paste sintering, improves leading for chip interconnection materials to a certain extent
The thermal efficiency, it is ensured that need the oxygen of abundance to decompose the organic principle in nanometer silver paste in nanometer silver paste sintering process, make burning
Knot is more thorough, the heated uneven shortcoming of nanometer silver paste in single sintering process is improved again, so as to improve the burning of nanometer silver paste
Form the quality of cake core interconnection material, with important industrial value.
Embodiment two：
The present embodiment and embodiment one are essentially identical, are particular in that：
In the present embodiment, a kind of method that two-step sintering nanometer silver paste prepares microelectronic interconnection material, including following step
Suddenly：
A. molecular formula is used for C as organic solvent using ethanol10H18O's and boiling point is 214-224 DEG C of terpinol
As diluent, use purity for 98% anhydrous citric acid sodium as dispersant, using polyvinyl butyral resin as organic
Carrier, measures 50ml ethanol, is heated to 60 DEG C, then weighs sodium citrate 0.045g, polyvinyl butyral resin using balance
0.5g, terpinol 0.355g, then sodium citrate, polyvinyl butyral resin and terpinol are slowly added in ethanol solution successively,
And mechanical agitation 5min, treat that ethanol solution is cooled down to room temperature, add 4.1g purity for 99.9% and average Argent grain grain
Footpath is 30nm properties of Ag nanoparticles prepared by flow-levitation method, then mechanical agitation 10min, and the beaker that will be equipped with Nano Silver mixture system is put into Ultrasound Instrument
Ultrasonic 30min, during which controls water temperature stability in ultrasound, and nano-silver powder and organic solvent carry out full and uniform mixing, prepare uniform
Scattered nanometer silver paste mixture system；
B. vacuum evaporation method is used, carries out being evaporated technique under vacuum conditions using Rotary Evaporators, will be in the step
The obtained nanometer silver paste mixture system prepared in rapid a carries out heating in vacuum drying, removes organic solvent and water, is had
The nanometer silver paste (3) that the viscosity that Ag mass percentage contents are 90% is 25Pas, i.e., in vacuum environment take out ethanol and
Water, the nanometer silver paste (3) after being dried；
C. using copper base (1) as substrate, using the printed panel (2) with setting through hole (5) distribution form, as receiving
The template of rice silver paste film figure, printed panel (2) is aligned with copper base (1), and copper base (1) is clear using acetone ultrasound in advance
Wash, dried after then being cleaned with ethanol, take out the nanometer silver paste (3) prepared in the step b from beaker with iron spoon and coat
Brushed repeatedly 3 times on pre-prepd printed panel (2), then with scraper plate, it is ensured that nanometer silver paste (3) is smeared uniform in copper base
(1) on, it is ensured that nanometer silver paste 3 and copper base 1 are in close contact, the Nano Silver serous coat of patterning is formed on copper base (1), then is used
Tweezers chip (4) is covered in scribbles patterning nanometer silver paste (3) position on, and compress copper base (1), printed panel (2) and
The layered combinations thereof device of chip (4) formation, makes copper base (1), printed panel (2) and chip (4) combine closely, and forms to be sintered group
Zoarium, it is standby；
D. open heating furnace power supply, set heat-agglomerating curve, by the copper base (1) prepared in the step c together with
The assembly to be sintered of chip (4) formation is put into heating furnace, is closed heated oven chamber's door, is started first time low-temperature sintering, carries out
During first time low-temperature sintering, heating furnace setting heat-agglomerating curve is：280 DEG C of sintering temperature is heated to from room temperature, through lasting
Between be 10min after, then at 280 DEG C of sintering temperature be incubated 15min, then cool to room temperature with the furnace, obtain preliminary sample；
E. complete after first time low-temperature sintering, taken out the preliminary sample after sintering with tweezers, then in the step d
Preliminary sample is placed on warm table middle position, preliminary sample is covered with cloche, and setting is left greatly for preliminary sample
Small gas port, then opens warm table power supply, starts second of low-temperature sintering, and it is 10min to control sintering time, and controls sintering
Temperature is 250 DEG C, after two-step heating sintering process terminates, and removes copper base (1) and printed panel (2), is finally obtained in chip (4)
To the Nano Silver thermal interfacial material with setting heat conduction interconnection structure (6).
The present embodiment uses two-step sintering method, it is possible to increase the mechanical strength of the chip interconnection materials prepared after sintering,
The voidage after reduction nanometer silver paste sintering, improves the heat transfer efficiency of chip interconnection materials, it is ensured that nanometer to a certain extent
Need the oxygen of abundance to decompose the organic principle in nanometer silver paste in silver paste sintering process, make sintering more thorough, improve again
The heated uneven shortcoming of nanometer silver paste in single sintering process, so as to improve the sinter molding chip interconnection materials of nanometer silver paste
Quality, with important industrial value.
Embodiment three：
The present embodiment is substantially the same as in the previous example, and is particular in that：
In the step e, completed in the step d after first time low-temperature sintering, connect warm table power supply, set and add
Thermal station target temperature, when warm table rises to target temperature, is taken out the preliminary sample after sintering with tweezers, then by preliminary sample
Product are placed on warm table middle position, are covered preliminary sample with cloche, and leave the gas port being sized for preliminary sample,
Directly heated under target temperature, after two-step heating sintering process terminates, remove copper base (1) and printed panel (2),
Chip (4) finally obtains the Nano Silver thermal interfacial material with setting heat conduction interconnection structure (6).The present embodiment uses two-step sintering
Method, using first heating up in the method for placing sample in second stage sintering process, makes sample directly enter under target temperature
Row low-temperature sintering, reduces influence of the process heating schedule to sintering process, and heating cycle is easily controllable, it is possible to increase after sintering
The mechanical strength of the chip interconnection materials of preparation, reduces the voidage after nanometer silver paste sintering, improves chip to a certain extent
The heat transfer efficiency of interconnection material, the sintered specimen obtained using two-step sintering method, compared to single sintering method, it is sheared
Intensity improves 30%, and thermal conductivity adds 25%, it is ensured that need the oxygen of abundance to decompose in nanometer silver paste sintering process
Organic principle in nanometer silver paste, makes sintering more thorough, and lacking for the heated inequality of nanometer silver paste in single sintering process is improved again
Point, so that the quality of the sinter molding chip interconnection materials of nanometer silver paste is improved, with important industrial value.
Example IV：
The present embodiment is substantially the same as in the previous example, and is particular in that：
In the step c, the matrix material of the copper base (1) used is coated with thickness successively for copper on Copper substrate surface
Nickel dam and thickness for 6 μm are 3 μm of silver layer, and the size of copper base (1) is 20 × 20mm, and the thickness of copper base (1) is
0.5mm, chip 4 is identical with the size of copper base 1, and size is also 2 × 2mm, and thickness is also 0.5mm.The present embodiment is in copper base
(1) surface prepares thermal interface material layer, can more efficiently ensure the nanometer silver paste 3 that is coated in follow-up sintering technical process by
Heat is more uniform, so as to improve the quality of the sinter molding chip interconnection materials of nanometer silver paste, is obtained using two-step sintering method
The sintered specimen arrived, compared to single sintering method, its shear strength improves 30%, and thermal conductivity adds 25%.
The embodiment of the present invention is illustrated above in conjunction with accompanying drawing, but the invention is not restricted to above-described embodiment, can be with
Made according to the purpose of the innovation and creation of the present invention under a variety of changes, all Spirit Essence and principle according to technical solution of the present invention
Change, modification, replacement, the combination or simplified made, should be equivalent substitute mode, as long as meeting the goal of the invention of the present invention,
Technical principle and the inventive concept of the method for microelectronic interconnection material are prepared without departing from two-step sintering nanometer silver paste of the present invention,
Belong to protection scope of the present invention.
Claims (10)
1. a kind of method that two-step sintering nanometer silver paste prepares microelectronic interconnection material, it is characterised in that comprise the following steps：
A. it is main uniformly to be mixed using nano-silver powder and organic solvent, prepare nanometer silver paste mixture system；
B. the obtained nanometer silver paste mixture system prepared in the step a is subjected to heating in vacuum drying, removed organic
Solvent, obtains the nanometer silver paste (3) with setting silver mass fraction and setting viscosity；
C. the nanometer silver paste (3) prepared in the step b is uniformly coated on copper-based as substrate using copper base (1)
On plate (1), Nano Silver serous coat is formed on copper base (1), chip (4) is covered on the position for scribbling nanometer silver paste (3), and
Copper base (1) and chip (4) are compressed, chip (4) and copper base (1) is combined closely；
D. the assembly to be sintered copper base (1) prepared in the step c formed together with chip (4) is put into heating furnace
First time low-temperature sintering is carried out, it is 25-60min to control sintering time, and control sintering temperature to be 240-280 DEG C, obtain preliminary
Sample；
E. the preliminary sample in the step d after completion first time low-temperature sintering is placed on warm table and heated, continued
Second of low-temperature sintering is carried out, it is 5-10min to control sintering time, and control sintering temperature to be 250-280 DEG C, in two-step heating
After sintering process terminates, copper base (1) is removed, the Nano Silver with setting heat conduction interconnection structure (6) is finally obtained in chip (4)
Thermal interfacial material.
2. the method that two-step sintering nanometer silver paste prepares microelectronic interconnection material according to claim 1, it is characterised in that：
In the step a, the average grain diameter of nano-silver powder is 20~30nm, and purity is not less than 99.9%.
3. the method that two-step sintering nanometer silver paste prepares microelectronic interconnection material according to claim 1, it is characterised in that：
In the step a, when preparing nanometer silver paste mixture system, using dispersant, diluent, organic carrier, organic solvent and
Nano-silver powder is through mechanical agitation 15-30min and ultrasound 20-30min, and the water temperature in Ultrasound Instrument is no more than 30 DEG C, fully mix
Close, obtain nanometer silver paste mixture system.
4. the method that two-step sintering nanometer silver paste prepares microelectronic interconnection material according to claim 3, it is characterised in that：
In the step a, diluent uses terpinol, and molecular formula is C10H18O, boiling point is 214-224 DEG C；Dispersant uses anhydrous lemon
Lemon acid sodium, purity is 98%；Organic carrier uses polyvinyl butyral resin.
5. the method that two-step sintering nanometer silver paste prepares microelectronic interconnection material according to claim 1, it is characterised in that：
In the step b, Ag mass contents are 82%-90%, the viscosity of nanometer silver paste (3) after drying in nanometer silver paste (3) after drying
For 18-25Pas；Using vacuum evaporation method, organic solvent is removed, institute is obtained using Rotary Evaporators under vacuum conditions
The nanometer silver paste (3) needed.
6. the method that two-step sintering nanometer silver paste prepares microelectronic interconnection material according to claim 1, it is characterised in that：
In the step c, using the printed panel (2) with setting through hole (5) distribution form, the mould of nanometer silver paste film figure is used as
Plate, printed panel (2) is aligned with copper base (1), and copper base (1) is cleaned by ultrasonic using acetone in advance, after then being cleaned with ethanol
Dry, the nanometer silver paste (3) prepared in the step b is gone out with iron bale-out and is coated on printed panel (2), then is applied repeatedly with scraper plate
Brush at least 1 time, it is ensured that nanometer silver paste (3) smears uniform, the Nano Silver serous coat of patterning is formed on copper base (1), then use tweezer
Chip (4) is covered on the position for scribbling patterning nanometer silver paste (3) by son, and compresses copper base (1), printed panel (2) and core
The layered combinations thereof device of piece (4) formation, makes copper base (1), printed panel (2) and chip (4) combine closely, and forms combination to be sintered
Body, it is standby；In the step e, after two-step heating sintering process terminates, copper base (1) and printed panel (2) are removed, in core
Piece (4) finally obtains the Nano Silver thermal interfacial material with setting heat conduction interconnection structure (6).
7. the method that two-step sintering nanometer silver paste prepares microelectronic interconnection material according to claim 1, it is characterised in that：
In the step c, the matrix material of copper base (1) is copper, be coated with successively on Copper substrate surface thickness be not more than 6 μm nickel dam and
Thickness is not more than 3 μm of silver layer.
8. the method that two-step sintering nanometer silver paste prepares microelectronic interconnection material according to claim 1, it is characterised in that：
In the step d, when carrying out first time low-temperature sintering, heating furnace power supply is opened, heat-agglomerating curve is set, will be in the step
The assembly to be sintered that the copper base (1) prepared in c is formed together with chip (4) is put into heating furnace, is closed heated oven chamber's door, is opened
Begin first time low-temperature sintering；When carrying out first time low-temperature sintering, heating furnace setting heat-agglomerating curve is：It is heated to burn from room temperature
240-280 DEG C of junction temperature, 15-30min, Ran Housui are incubated after elapsed-time standards is 10-30min, then at 280 DEG C of sintering temperature
Stove is cooled to room temperature, obtains preliminary sample.
9. the method that two-step sintering nanometer silver paste prepares microelectronic interconnection material according to claim 1, it is characterised in that：
In the step e, when carrying out second of low-temperature sintering, complete after first time low-temperature sintering, will be burnt with tweezers in the step d
Preliminary sample after knot is taken out, and then preliminary sample is placed on warm table middle position, preliminary sample is covered with cloche,
And the gas port being sized is left for preliminary sample, warm table power supply is then opened, starts second of low-temperature sintering.
10. the method that two-step sintering nanometer silver paste prepares microelectronic interconnection material according to claim 1, it is characterised in that：
In the step e, when carrying out second of low-temperature sintering, warm table power supply is connected, it is 250-280 to set warm table target temperature
DEG C, placed when warm table rises to target temperature, then by preliminary sample on warm table, the heat time is 5-10min.
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